CN111969056A - Core-shell structure AlGaN/GaN heterojunction nanowire-based transistor and preparation method thereof - Google Patents
Core-shell structure AlGaN/GaN heterojunction nanowire-based transistor and preparation method thereof Download PDFInfo
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
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- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
- H01L29/66318—Heterojunction transistors
Abstract
The invention provides an AlGaN/GaN heterojunction nanowire-based transistor with a core-shell structure and a preparation method thereof, belonging to the technical field of microelectronics. In the core-shell structure AlGaN/GaN heterojunction nanowire-based transistor provided by the invention, the GaN nanowire, the AlN layer and the AlGaN layer form the AlGaN/GaN heterojunction nanowire with the core-shell structure, and the AlGaN/GaN heterojunction nanowire with the structure can form the wrapping type source electrode, the drain electrode and the gate electrode, so that two-dimensional electron gas is generated on the inner interface of the whole core-shell structure, namely the two-dimensional electron gas is generated on any side surface of the AlGaN/GaN heterojunction nanowire.
Description
Technical Field
The invention relates to the technical field of microelectronics, in particular to an AlGaN/GaN heterojunction nanowire-based transistor with a core-shell structure and a preparation method thereof.
Background
GaN materials, as a representative of the third generation semiconductor materials, have more prominent advantages: wide forbidden band (3.4eV), high temperature resistance, radiation resistance, stable physical and chemical properties, and the like. Among various III-nitride heterojunctions, AlGaN/GaN forms two-dimensional electron gas (2DEG) on the inner surface of the heterojunction due to the larger spontaneous polarization effect, so that the AlGaN/GaN is widely applied to the preparation of high electron mobility transistors. Nowadays, GaN-based high electron mobility transistor devices (HEMTs) are widely used in power amplifiers, switches, oscillators and integrated circuits with low noise, high power, broadband traveling wave and the like; with the development of internet technologies represented by electric vehicles, motor train units and 5G technologies, the method has good application prospects in the fields of communication, radar, electronics, aerospace, nuclear industry, national defense and military and the like.
Due to the size advantage of the one-dimensional nanowire, the one-dimensional nanowire not only has the excellent properties of a semiconductor material, but also has good mechanical flexibility, high specific surface area, unique electrical properties and the like, so that the one-dimensional nanowire becomes a hot spot of current research and has good application prospects in the future microelectronic integration field.
The AlGaN/GaN heterojunction nanowire-based HEMT electronic device not only has excellent characteristics of high frequency, high voltage and the like, but also has instructive significance for manufacturing integrated electronic devices of high temperature, high frequency, high power and the like by combining with the basic properties of the nanowire. However, the traditional AlGaN/GaN heterojunction nanowire-based HEMT electronic device is of a sandwich-like structure, AlN and AlGaN are respectively arranged on a GaN layer, two-dimensional electron gas between GaN and AlN is formed on the inner side of GaN, and the two-dimensional electron gas is formed on only one GaN surface, so that the total number of electrons in the two-dimensional electron gas is limited, and as the voltage increases, the current of the electron gas does not change after increasing, and the further improvement of the electron mobility of the electronic device is limited.
Disclosure of Invention
The invention aims to provide a core-shell structure AlGaN/GaN heterojunction nanowire-based transistor and a preparation method thereof.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides an AlGaN/GaN heterojunction nanowire-based transistor with a core-shell structure, which comprises a substrate and a GaN nanowire loaded on the surface of the substrate, wherein the GaN nanowire is hexagonal prism-shaped, an AlN layer and an AlGaN layer are sequentially wrapped around the outer side of the GaN nanowire along the length direction of the GaN nanowire, and the GaN nanowire, the AlN layer and the AlGaN layer form an AlGaN/GaN heterojunction nanowire with a core-shell structure; each side surface of the AlGaN/GaN heterojunction nanowire with the core-shell structure generates two-dimensional electron gas;
the AlGaN/GaN heterojunction nanowire is characterized by also comprising a source electrode and a drain electrode which are respectively arranged at two ends of the AlGaN/GaN heterojunction nanowire;
further comprising a gate electrode disposed between the source and drain electrodes;
the gate dielectric layer is arranged on the inner side of the gate electrode and is in contact with the AlGaN/GaN heterojunction nanowire;
the source electrode, the drain electrode and the gate electrode are all in a wrapping type, and the source electrode, the drain electrode and the gate electrode form a closed ring and wrap the closed ring on the AlGaN/GaN heterojunction nanowire.
Preferably, the side length of a top hexagon of the GaN nanowire is 0.5-10 mu m, and the height of the GaN nanowire is 130-180 mu m.
Preferably, the AlN layer has a thickness of 1 to 3 nm.
Preferably, the total atomic number ratio of Al to the metal elements in the AlGaN layer is (0.1 to 0.3): 1; the thickness of the AlGaN layer is 10-30 nm.
Preferably, the source electrode and the drain electrode are made of laminated Ti/Al/Ni/Au or laminated Ti/Al/Ti/Au independently; the distance between the source electrode and the drain electrode is 50-80 mu m.
Preferably, the gate dielectric layer is made of HfO2Or Al2O3The thickness of the gate dielectric layer is 100-200 nm.
Preferably, the gate electrode is made of laminated Ni/Au, wherein the thickness of the Ni layer is 20-40 nm, and the thickness of the Au layer is 150-450 nm.
The invention provides a preparation method of the core-shell structure AlGaN/GaN heterojunction nanowire-based transistor, which comprises the following steps:
growing Si on sapphire substrate by metal organic chemical vapor deposition3N4A seed crystal layer;
in the presence of Si3N4Vertically growing a GaN nanowire on the seed crystal layer;
sequentially epitaxially growing an AlN layer and an AlGaN layer on the periphery of the outer side of the GaN nanowire, and removing the sapphire substrate after ultrasonic treatment to obtain a solution of the AlGaN/GaN heterojunction nanowire containing the core-shell structure;
coating the solution of the AlGaN/GaN heterojunction nanowire containing the core-shell structure on a substrate, drying, preparing a source electrode at one end of the AlGaN/GaN heterojunction nanowire of the core-shell structure, and preparing a drain electrode at the other end of the AlGaN/GaN heterojunction nanowire of the core-shell structure to form a wrapped source electrode and a wrapped drain electrode;
and preparing a gate dielectric layer between the source electrode and the drain electrode, preparing a gate electrode on the gate dielectric layer to form a wrapping type gate electrode, and annealing to obtain the core-shell structure AlGaN/GaN heterojunction nanowire-based transistor.
Preferably, the method for preparing the source electrode or the drain electrode is independently magnetron sputtering or electron beam evaporation.
Preferably, the method for preparing the gate dielectric layer and the gate electrode is a magnetron sputtering method.
The invention provides an AlGaN/GaN heterojunction nanowire-based transistor with a core-shell structure, which comprises a substrate and a GaN nanowire loaded on the surface of the substrate, wherein the GaN nanowire is hexagonal prism-shaped, an AlN layer and an AlGaN layer are sequentially wrapped around the outer side of the GaN nanowire along the length direction of the GaN nanowire, and the GaN nanowire, the AlN layer and the AlGaN layer form an AlGaN/GaN heterojunction nanowire with a core-shell structure; each side surface of the AlGaN/GaN heterojunction nanowire with the core-shell structure generates two-dimensional electron gas; the AlGaN/GaN heterojunction nanowire is characterized by also comprising a source electrode and a drain electrode which are respectively arranged at two ends of the AlGaN/GaN heterojunction nanowire; further comprising a gate electrode disposed between the source and drain electrodes; the gate dielectric layer is arranged on the inner side of the gate electrode and is in contact with the AlGaN/GaN heterojunction nanowire; the source electrode, the drain electrode and the gate electrode are all in a wrapping type, and the source electrode, the drain electrode and the gate electrode form a closed ring and wrap the closed ring on the AlGaN/GaN heterojunction nanowire.
In the core-shell structure AlGaN/GaN heterojunction nanowire-based transistor provided by the invention, the GaN nanowire, the AlN layer and the AlGaN layer form the AlGaN/GaN heterojunction nanowire with the core-shell structure, and the AlGaN/GaN heterojunction nanowire with the structure can form the wrapping type drain electrode, the source electrode and the gate electrode, so that two-dimensional electron gas is generated on the inner interface of the whole core-shell structure, namely the two-dimensional electron gas is generated on any side surface of the AlGaN/GaN heterojunction nanowire.
In the core-shell structure AlGaN/GaN heterojunction nanowire-based transistor provided by the invention, the source electrode, the drain electrode and the gate electrode are wrapped, namely the source electrode, the drain electrode and the gate electrode wrap the AlGaN/GaN heterojunction nanowire with the core-shell structure, so that two-dimensional electron gas can be better transmitted, the contact between metal and a semiconductor is improved, and the conductivity of a device is further improved; in the conventional HEMT device, the source electrode, the drain electrode and the gate electrode are generally covered electrodes, i.e., GaN nanowires are covered, and two-dimensional electron gas cannot be generated on any side surface of the nanowires.
The invention provides a preparation method of the AlGaN/GaN heterojunction nanowire-based transistor with the core-shell structure, the AlGaN/GaN heterojunction nanowire with the core-shell structure is epitaxially grown by using an MOCVD method, and the length, the width and the height of the AlGaN/GaN heterojunction nanowire can be controlled by controlling the growth conditions of the MOCVD, so that the growth controllability of the AlGaN/GaN heterojunction nanowire-based HEMT device is effectively improved.
The preparation method combines the MOCVD epitaxial growth, the magnetron sputtering, the rapid thermal annealing and other technologies, realizes the preparation of the core-shell structure AlGaN/GaN heterojunction nanowire-based HEMT electronic device, has simple method and high repeatability, and is more beneficial to the practical application in the field of semiconductor devices.
Drawings
FIG. 1 is a schematic structural diagram of a core-shell AlGaN/GaN heterojunction nanowire-based transistor provided by the present invention;
FIG. 2 is a schematic view of a core-shell AlGaN/GaN heterojunction nanowire according to the present invention;
FIG. 3 is a schematic flow chart of a method for fabricating a core-shell AlGaN/GaN heterojunction nanowire-based transistor according to the present invention;
fig. 4 is a current-voltage transmission curve diagram of core-shell structured AlGaN/GaN heterojunction nanowire-based transistors prepared in example 1 under different gate voltages.
Detailed Description
As shown in fig. 1, the invention provides an AlGaN/GaN heterojunction nanowire-based transistor with a core-shell structure, which comprises a substrate and a GaN nanowire loaded on the surface of the substrate, wherein the GaN nanowire is hexagonal prism-shaped, an AlN layer and an AlGaN layer are sequentially wrapped around the outer side of the GaN nanowire along the length direction of the GaN nanowire, and the GaN nanowire, the AlN layer and the AlGaN layer form an AlGaN/GaN heterojunction nanowire with a core-shell structure; each side surface of the AlGaN/GaN heterojunction nanowire with the core-shell structure generates two-dimensional electron gas;
the AlGaN/GaN heterojunction nanowire is characterized by also comprising a source electrode and a drain electrode which are respectively arranged at two ends of the AlGaN/GaN heterojunction nanowire;
further comprising a gate electrode disposed between the source and drain electrodes;
the gate dielectric layer is arranged on the inner side of the gate electrode and is in contact with the AlGaN/GaN heterojunction nanowire;
the source electrode, the drain electrode and the gate electrode are all in a wrapping type, and the source electrode, the drain electrode and the gate electrode form a closed ring and wrap the closed ring on the AlGaN/GaN heterojunction nanowire.
In the present invention, the materials required are all commercially available products well known to those skilled in the art unless otherwise specified.
The core-shell structure AlGaN/GaN heterojunction nanowire-based transistor comprises a substrate. In the present invention, the substrate is preferably sapphire or high-resistivity silicon, and the sapphire or high-resistivity silicon is not particularly limited in the present invention, and may be commercially available as is well known in the art. In the present invention, the substrate is preferably ultrasonically cleaned using acetone, isopropyl alcohol, and deionized water in this order before use, and dried with nitrogen. The process of ultrasonic cleaning and nitrogen blow-drying is not particularly limited in the present invention and may be performed according to a process well known in the art.
The AlGaN/GaN heterojunction nanowire-based transistor with the core-shell structure comprises a GaN nanowire loaded on the surface of a substrate, wherein the GaN nanowire is hexagonal prism-shaped; the GaN nanowire is characterized in that an AlN layer and an AlGaN layer are sequentially wrapped around the outer side of the GaN nanowire along the length direction of the GaN nanowire, the AlN layer and the AlGaN layer form an AlGaN/GaN heterojunction nanowire with a core-shell structure (as shown in figure 2), and two-dimensional electron gas is generated on each side surface of the AlGaN/GaN heterojunction nanowire with the core-shell structure. In the invention, the side length of the top hexagon of the GaN nanowire is preferably 0.5-10 μm, more preferably 2-8 μm, and even more preferably 5-6 μm, and the height of the GaN nanowire is preferably 130-180 μm, and more preferably 150-160 μm. The number and arrangement of the GaN nanowires are not particularly limited in the present invention, and may be set according to the number and arrangement known in the art.
In the present invention, the AlN layer has a thickness of preferably 1 to 3nm, more preferably 1.5 to 2.5 nm.
In the present invention, the total atomic number ratio of Al to the metal element in the AlGaN layer is preferably (0.1 to 0.3): 1, more preferably 0.2:1, i.e. AlxGa1-xN, wherein x is preferably 0.1-0.3, and more preferably 0.2; the thickness of the AlGaN layer is preferably 10-30 nm, and more preferably 15-25 nm.
In the invention, the GaN nanowire, the AlN layer and the AlGaN layer form an AlGaN/GaN heterojunction nanowire with a core-shell structure; in the AlGaN/GaN heterojunction nanowire with the core-shell structure, an AlN layer and an AlGaN layer are only wrapped on the outer side of the GaN nanowire along the length direction, and the AlN layer and the AlGaN layer are not wrapped at two ends of the GaN nanowire.
The core-shell structure AlGaN/GaN heterojunction nanowire-based transistor further comprises a source electrode and a drain electrode which are respectively arranged at two ends of the AlGaN/GaN heterojunction nanowire. In the invention, the distance between the source electrode and the drain electrode is preferably 50-80 μm, and more preferably 60-70 μm. The invention has no special limitation on the specific positions of the two ends, and the distance is satisfied. In the present invention, the source electrode and the drain electrode are preferably made of stacked Ti/Al/Ni/Au or stacked Ti/Al/Ti/Au independently; the Ti layer is in contact with the AlGaN/GaN heterojunction nanowire, and the Au layer is the outermost layer; in the materials of the source electrode and the drain electrode, the thickness of the Ti layer is preferably 10-30 nm and more preferably 15-25 nm independently, the thickness of the Al layer is preferably 90-120 nm independently, the thickness of the Ni layer is preferably 5-15 nm and more preferably 8-12 nm, and the thickness of the Au layer is preferably 80-150 nm and more preferably 100-120 nm independently.
The core-shell structure AlGaN/GaN heterojunction nanowire base transistor further comprises a gate electrode arranged between the source electrode and the drain electrode. In the invention, the gate electrode is preferably made of laminated Ni/Au, wherein the Ni layer is in contact with the gate dielectric layer, the thickness of the Ni layer in the laminated Ni/Au is preferably 20-40 nm, more preferably 30nm, and the thickness of the Au layer is preferably 150-450 nm, more preferably 300 nm. In the present invention, the thickness of the gate electrode is preferably 170 to 490nm, and more preferably 360 nm.
The core-shell structure AlGaN/GaN heterojunction nanowire-based transistor further comprises a gate dielectric layer arranged on the inner side of the gate electrode, and the gate dielectric layer is in contact with the AlGaN/GaN heterojunction nanowire. The specific position of the gate dielectric layer inside the gate electrode is not particularly limited in the present invention, and can be understood according to the well-known position in the art. In the invention, the material of the gate dielectric layer is preferably selectedIs HfO2Or Al2O3The thickness of the gate dielectric layer is preferably 100-200 nm, more preferably 120-180 nm, and further preferably 150-160 nm.
In the invention, the source electrode, the drain electrode and the gate electrode are all in a wrapping type, and the wrapping type means that each electrode forms a closed ring and is wrapped on each surface of the AlGaN/GaN heterojunction nanowire.
The invention provides a preparation method of the core-shell structure AlGaN/GaN heterojunction nanowire-based transistor, which comprises the following steps:
growing Si on sapphire substrate by metal organic chemical vapor deposition3N4A seed crystal layer;
in the presence of Si3N4Vertically growing a GaN nanowire on the seed crystal layer;
sequentially epitaxially growing an AlN layer and an AlGaN layer on the periphery of the outer side of the GaN nanowire, and removing the sapphire substrate after ultrasonic treatment to obtain a solution of the AlGaN/GaN heterojunction nanowire containing the core-shell structure;
coating the solution of the AlGaN/GaN heterojunction nanowire containing the core-shell structure on a substrate, drying, preparing a source electrode at one end of the AlGaN/GaN heterojunction nanowire of the core-shell structure, and preparing a drain electrode at the other end of the AlGaN/GaN heterojunction nanowire of the core-shell structure to form a wrapped source electrode and a wrapped drain electrode;
and preparing a gate dielectric layer between the source electrode and the drain electrode, preparing a gate electrode on the gate dielectric layer to form a wrapping type gate electrode, and annealing to obtain the core-shell structure AlGaN/GaN heterojunction nanowire-based transistor.
The invention adopts a metal organic chemical vapor deposition method to grow Si on a sapphire substrate3N4A seed layer. Si according to the invention3N4And the seed crystal layer is grown on the surface of the sapphire substrate in a dispersed mode. The invention is directed to said Si3N4The thickness of the seed layer is not particularly limited, and may be selected from those known in the art. In the present invention, said Si3N4Seed crystal layerThe discrete distribution on the surface of the substrate refers to Si3N4The seed is discontinuous to ensure that subsequent gallium nitride growth on the seed can form a column. The present invention utilizes the Si3N4The seed crystal layer provides seeds for the growth of the GaN, and the dispersion (discontinuity) of the seed crystal ensures the dispersion of the subsequently grown gallium nitride, thereby ensuring that the GaN nanowire with a vertical structure is obtained.
In the present invention, the growing Si is3N4The seed layer is preferably made of SiH4And NH3The invention is directed to the SiH4And NH3The amount ratio of (A) to (B) is not particularly limited, and discrete Si can be grown3N4And (4) seed crystal layer. The specific process of the Metal Organic Chemical Vapor Deposition (MOCVD) method is not particularly limited in the present invention, and the process is performed according to a process well known in the art, and Si can be grown on a substrate3N4And (4) seed crystal layer. In the embodiment of the invention, the temperature of the MOCVD reaction chamber for MOCVD is 800 ℃.
Growing Si3N4After the seed crystal layer, the invention is carried out on the Si3N4And vertically growing a GaN nanowire on the seed crystal layer, sequentially epitaxially growing an AlN layer and an AlGaN layer around the outer side of the GaN nanowire, and removing the sapphire substrate after ultrasonic treatment to obtain a solution containing the AlGaN/GaN heterojunction nanowire with the core-shell structure. The GaN nanowire, the AlN layer and the AlGaN layer are preferably grown by a metal organic chemical vapor deposition method. The specific process of the Metal Organic Chemical Vapor Deposition (MOCVD) is not particularly limited, and the process may be performed according to a process known in the art. In the present invention, the raw material for growing the GaN nanowire is preferably TMGa and NH3The material for growing the AlN layer is preferably TMAl or NH3The AlGaN layer is preferably grown from TMGa, TMAl, and NH3. The invention has no special limit on the proportion of the raw materials for growing the GaN nanowire, the AlN layer and the AlGaN layer, and the proportion known in the field can be selected.
In the present invention, the ultrasonic treatment is preferably performed by mixing a product obtained by epitaxially growing the AlN layer and the AlGaN layer with a solvent and performing ultrasonic treatment. In the present invention, the solvent is preferably water, alcohol or isopropyl alcohol; the invention has no special limitation on the dosage of the solvent, and can completely infiltrate the product after the AlN layer and the AlGaN layer are epitaxially grown. In the invention, the time of the ultrasonic treatment is preferably 15-30 min, more preferably 20-250 min, and the ultrasonic treatment equipment is not particularly limited, and can be ultrasonic equipment well known in the art. According to the invention, the GaN nanowire is broken through ultrasonic treatment, the GaN nanowire is separated from the sapphire substrate, a single nanowire is obtained by stripping from an epitaxial wafer after an AlN layer and an AlGaN layer are epitaxially grown to prepare a transistor device, and AlN and AlGaN are sequentially arranged on the outer layer of the GaN nanowire to form the AlGaN/GaN heterojunction nanowire with a core-shell structure.
After the solution of the AlGaN/GaN heterojunction nanowire containing the core-shell structure is obtained, the solution of the AlGaN/GaN heterojunction nanowire containing the core-shell structure is coated on a substrate, a source electrode is prepared at one end of the AlGaN/GaN heterojunction nanowire containing the core-shell structure after drying, a drain electrode is prepared at the other end of the AlGaN/GaN heterojunction nanowire containing the core-shell structure, and a wrapped source electrode and a wrapped drain electrode are formed. The concentration of the solution of the AlGaN/GaN heterojunction nanowire containing the core-shell structure is not particularly limited, and the concentration corresponds to the dosage of the solvent. The method volatilizes the solvent through drying to obtain the AlGaN/GaN heterojunction nanowire with the core-shell structure. The coating and drying process is not particularly limited in the present invention, and may be performed according to a process well known in the art. The AlGaN/GaN heterojunction nanowire with the core-shell structure is transferred and supported by the substrate, so that the source electrode, the drain electrode and the gate electrode can be conveniently prepared subsequently.
The drain electrode or the source electrode is preferably prepared by using a patterned metal mask plate, and the patterned metal mask plate is not particularly limited in the invention and can be any patterned metal mask plate well known in the field. In the present invention, the method for preparing the source electrode or the drain electrode is independently preferably a magnetron sputtering method or an electron beam evaporation method. The present invention is not particularly limited to the specific process of the magnetron sputtering method or the electron beam evaporation method, and the wrapped-around drain electrode and the wrapped-around source electrode having the above thicknesses may be formed according to a process known in the art.
After a source electrode and a drain electrode are formed, a gate dielectric layer is prepared between the source electrode and the drain electrode, a gate electrode is prepared on the gate dielectric layer to form a wrapping type gate electrode, and the core-shell structure AlGaN/GaN heterojunction nanowire-based transistor is obtained after annealing. In the invention, the method for preparing the gate dielectric layer and the gate electrode is preferably a magnetron sputtering method. The specific process of the magnetron sputtering method is not particularly limited, and the wrapped gate dielectric layer and the wrapped gate electrode with the thicknesses can be formed according to the process known in the art. The invention preferably adopts a graphical metal mask plate to prepare the gate dielectric layer and the gate electrode, and the graphical metal mask plate is not specially limited in the invention and can be any graphical metal mask plate well known in the field. The present invention is not particularly limited to a specific position of the gate electrode, and the gate electrode may be positioned between the source electrode and the drain electrode according to an operation well known in the art.
In the present invention, the annealing is preferably performed in a rapid annealing furnace, and the annealing is preferably performed in N2The annealing is carried out under the environment, the temperature of the annealing is preferably 850 ℃, and the time is preferably 30 s; the invention enhances the contact between the electrode and the device through annealing treatment, and improves the conductivity of the electrode.
FIG. 3 is a schematic flow chart of a method for fabricating a core-shell AlGaN/GaN heterojunction nanowire-based transistor according to the present invention; as shown in the figure, the present invention first grows Si on the substrate3N4Seed layer, then on said Si3N4Vertically growing a GaN nanowire on the seed crystal layer, sequentially epitaxially growing an AlN layer and an AlGaN layer on the outer side of the GaN nanowire, performing ultrasonic treatment on the obtained product, and stripping an epitaxial wafer to obtain the AlGaN/GaN heterojunction nanowire with the core-shell structure; respectively preparing a wrapped source electrode and a wrapped drain electrode at two ends of the core-shell structure AlGaN/GaN heterojunction nanowire, preparing a wrapped gate dielectric layer between the source electrode and the drain electrode, and preparing a gate electrode on the gate dielectric layer to obtain the core-shell structure AlGaN/GaN heterojunction nanowireA nanowire-based transistor.
The technical solution of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Sequentially carrying out ultrasonic cleaning on the sapphire substrate by using acetone, isopropanol and deionized water, blow-drying by using nitrogen, and putting into an MOCVD cavity;
by MOCVD method with SiH4And NH3Setting the temperature of an MOCVD reaction chamber as 800 ℃ as a raw material, and growing discrete Si on a sapphire substrate3N4Seed crystal layer of TMGa and NH3As a raw material, in said Si3N4Growing a GaN nanowire on the seed crystal layer, wherein the side length of a hexagon in the nanowire hexagonal cylinder is 0.5 mu m, and the height of the hexagon is 130 mu m, and then sequentially epitaxially growing an AlN layer (the raw materials are TMAl and NH) around the outer side of the GaN nanowire3) And AlGaN layer (with TMGa, TMAl and NH as raw materials)3) The AlN layer is 1nm thick, the atomic number ratio of Al to total metal elements in the AlGaN layer is 0.1:1, and the AlGaN layer is 10nm thick;
immersing the sample after epitaxial growth into deionized water, immersing the sample in the water, performing ultrasonic treatment for 15min, spin-coating the obtained solution containing the AlGaN/GaN heterojunction nanowire on a sapphire substrate, and drying to obtain the AlGaN/GaN heterojunction nanowire with the core-shell structure;
respectively preparing a source electrode and a drain electrode at two ends of the core-shell structure AlGaN/GaN heterojunction nanowire by using a graphical metal mask plate and utilizing a magnetron sputtering mode to form a wrapped source electrode and a wrapped drain electrode; the distance between the source electrode and the drain electrode is 50 μm; the source electrode and the drain electrode are made of laminated Ti/Al/Ni/Au, and the thickness of each layer is 20nm/100nm/10nm/100 nm; the Ti layer is in contact with the AlGaN/GaN heterojunction nanowire, and the Au layer is the outermost layer;
preparing Al between the source electrode and the drain electrode by using another patterned metal mask plate in a magnetron sputtering manner2O3A gate dielectric layer (the thickness is 150nm), and a Ni/Au gate electrode is prepared on the gate dielectric layer, the thickness of each layer is 30nm/300nm respectively, and the Ni layer is in contact with the gate dielectric layer;
the product with the source electrode, the drain electrode and the gate electrode is processed in N by using a rapid annealing furnace2Annealing at 850 ℃ for 30s under the environment; and obtaining the AlGaN/GaN heterojunction nanowire-based transistor (CS-HEMT) with the core-shell structure.
Example 2
Sequentially carrying out ultrasonic cleaning on the sapphire substrate by using acetone, isopropanol and deionized water, blow-drying by using nitrogen, and putting into an MOCVD cavity;
by MOCVD method with SiH4And NH3Setting the temperature of an MOCVD reaction chamber as 800 ℃ as a raw material, and growing discrete Si on a sapphire substrate3N4Seed crystal layer of TMGa and NH3As a raw material, in said Si3N4Growing a GaN nanowire on the seed crystal layer, wherein the side length of a hexagon in the hexagonal cylinder of the nanowire is 10 mu m, and the height of the hexagon is 180 mu m, and then sequentially epitaxially growing an AlN layer (the raw materials are TMAl and NH) around the outer side of the GaN nanowire3) And AlGaN layer (with TMGa, TMAl and NH as raw materials)3) The AlN layer is 3nm thick, the atomic number ratio of Al to total metal elements in the AlGaN layer is 0.3:1, and the AlGaN layer is 30nm thick;
immersing the sample after epitaxial growth into deionized water, immersing the sample in the water, performing ultrasonic treatment for 15min, spin-coating the obtained solution containing the AlGaN/GaN heterojunction nanowire on a sapphire substrate, and drying to obtain the AlGaN/GaN heterojunction nanowire with the core-shell structure;
respectively preparing a source electrode and a drain electrode at two ends of the core-shell structure AlGaN/GaN heterojunction nanowire by using a graphical metal mask plate and utilizing a magnetron sputtering mode to form a wrapped source electrode and a wrapped drain electrode; the distance between the source electrode and the drain electrode is 80 μm; the source electrode and the drain electrode are made of laminated Ti/Al/Ni/Au, and the thickness of each layer is 30nm/120nm/15nm/150 nm; the Ti layer is in contact with the AlGaN/GaN heterojunction nanowire, and the Au layer is the outermost layer;
preparing Al between the source electrode and the drain electrode by using another patterned metal mask plate in a magnetron sputtering manner2O3A gate dielectric layer (the thickness is 150nm), and a Ni/Au gate electrode is prepared on the gate dielectric layer, the thickness of each layer is 30nm/300nm respectively, and the Ni layer is in contact with the gate dielectric layer;
the product with the source electrode, the drain electrode and the gate electrode is processed in N by using a rapid annealing furnace2Annealing at 850 ℃ for 30s under the environment; and obtaining the AlGaN/GaN heterojunction nanowire-based transistor (CS-HEMT) with the core-shell structure.
Example 3
Sequentially carrying out ultrasonic cleaning on the sapphire substrate by using acetone, isopropanol and deionized water, blow-drying by using nitrogen, and putting into an MOCVD cavity;
by MOCVD method with SiH4And NH3Setting the temperature of an MOCVD reaction chamber as 800 ℃ as a raw material, and growing discrete Si on a sapphire substrate3N4Seed crystal layer of TMGa and NH3As a raw material, in said Si3N4Growing a GaN nanowire on the seed crystal layer, wherein the side length of a hexagon in the hexagonal cylinder of the nanowire is 3 mu m, and the height of the hexagon is 150 mu m, and then sequentially epitaxially growing an AlN layer (the raw materials are TMAl and NH) around the outer side of the GaN nanowire3) And AlGaN layer (with TMGa, TMAl and NH as raw materials)3) The thickness of the AlN layer is 1.5nm, the atomic number ratio of Al to total metal elements in the AlGaN layer is 0.15:1, and the thickness of the AlGaN layer is 15 nm;
immersing the sample after epitaxial growth into deionized water, immersing the sample in the water, performing ultrasonic treatment for 15min, spin-coating the obtained solution containing the AlGaN/GaN heterojunction nanowire on a sapphire substrate, and drying to obtain the AlGaN/GaN heterojunction nanowire with the core-shell structure;
respectively preparing a source electrode and a drain electrode at two ends of the core-shell structure AlGaN/GaN heterojunction nanowire by using a graphical metal mask plate and utilizing a magnetron sputtering mode to form a wrapped source electrode and a wrapped drain electrode; the distance between the source electrode and the drain electrode is 65 μm; the source electrode and the drain electrode are made of laminated Ti/Al/Ni/Au, and the thickness of each layer is 20nm/100nm/10nm/100 nm; the Ti layer is in contact with the AlGaN/GaN heterojunction nanowire, and the Au layer is the outermost layer;
preparing Al between the source electrode and the drain electrode by using another patterned metal mask plate in a magnetron sputtering manner2O3A gate dielectric layer (the thickness is 150nm), and a Ni/Au gate electrode is prepared on the gate dielectric layer, the thickness of each layer is 30nm/300nm respectively, and the Ni layer is in contact with the gate dielectric layer;
the product with the source electrode, the drain electrode and the gate electrode is processed in N by using a rapid annealing furnace2Annealing at 850 ℃ for 30s under the environment; and obtaining the AlGaN/GaN heterojunction nanowire-based transistor (CS-HEMT) with the core-shell structure.
Performance testing
The electrical performance of the core-shell structure AlGaN/GaN heterojunction nanowire-based transistor prepared in example 1 was tested, and the current-voltage characteristics of the transistor were measured using a source table and a probe table, and the results are shown in fig. 4, where it can be seen from fig. 4 that as the gate Voltage (VG) increases, the maximum output voltage at the two ends of the source and drain electrodes increases, indicating a better regulation capability of the gate (when the gate voltage is greater than-3V). When the voltage of the grid electrode is fixed, the current between the source electrode and the drain electrode is increased firstly and then is saturated along with the increase of the voltage between the source electrode and the drain electrode, which accords with the characteristics of the transistor and shows that the transistor provided by the invention has better electrical performance.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. The AlGaN/GaN heterojunction nanowire-based transistor with the core-shell structure comprises a substrate and a GaN nanowire loaded on the surface of the substrate, wherein the GaN nanowire is hexagonal prism-shaped, an AlN layer and an AlGaN layer are sequentially wrapped around the outer side of the GaN nanowire along the length direction of the GaN nanowire, and the GaN nanowire, the AlN layer and the AlGaN layer form an AlGaN/GaN heterojunction nanowire with the core-shell structure; each side surface of the AlGaN/GaN heterojunction nanowire with the core-shell structure generates two-dimensional electron gas;
the AlGaN/GaN heterojunction nanowire is characterized by also comprising a source electrode and a drain electrode which are respectively arranged at two ends of the AlGaN/GaN heterojunction nanowire;
further comprising a gate electrode disposed between the source and drain electrodes;
the gate dielectric layer is arranged on the inner side of the gate electrode and is in contact with the AlGaN/GaN heterojunction nanowire;
the source electrode, the drain electrode and the gate electrode are all in a wrapping type, and the source electrode, the drain electrode and the gate electrode form a closed ring and wrap the closed ring on the AlGaN/GaN heterojunction nanowire.
2. The AlGaN/GaN heterojunction nanowire-based transistor with a core-shell structure according to claim 1, wherein the side length of a top hexagon of the GaN nanowire is 0.5-10 μm, and the height of the GaN nanowire is 130-180 μm.
3. The AlGaN/GaN heterojunction nanowire-based transistor with a core-shell structure according to claim 1, wherein the AlN layer has a thickness of 1-3 nm.
4. The core-shell AlGaN/GaN heterojunction nanowire-based transistor according to claim 1, wherein the total atomic number ratio of Al to metal elements in the AlGaN layer is (0.1-0.3): 1; the thickness of the AlGaN layer is 10-30 nm.
5. The AlGaN/GaN heterojunction nanowire-based transistor with a core-shell structure according to claim 1, wherein the source electrode and the drain electrode are made of stacked Ti/Al/Ni/Au or stacked Ti/Al/Ti/Au; the distance between the source electrode and the drain electrode is 50-80 mu m.
6. The core-shell AlGaN/GaN heterojunction nanowire-based transistor according to claim 1, whichIs characterized in that the gate dielectric layer is made of HfO2Or Al2O3The thickness of the gate dielectric layer is 100-200 nm.
7. The AlGaN/GaN heterojunction nanowire-based transistor with a core-shell structure according to claim 1, wherein the gate electrode is made of a laminated Ni/Au layer, and in the laminated Ni/Au layer, the thickness of the Ni layer is 20-40 nm, and the thickness of the Au layer is 150-450 nm.
8. The preparation method of the core-shell structure AlGaN/GaN heterojunction nanowire-based transistor according to any one of claims 1 to 7, characterized by comprising the following steps:
growing Si on sapphire substrate by metal organic chemical vapor deposition3N4A seed crystal layer;
in the presence of Si3N4Vertically growing a GaN nanowire on the seed crystal layer;
sequentially epitaxially growing an AlN layer and an AlGaN layer on the periphery of the outer side of the GaN nanowire, and removing the sapphire substrate after ultrasonic treatment to obtain a solution of the AlGaN/GaN heterojunction nanowire containing the core-shell structure;
coating the solution of the AlGaN/GaN heterojunction nanowire containing the core-shell structure on a substrate, drying, preparing a source electrode at one end of the AlGaN/GaN heterojunction nanowire of the core-shell structure, and preparing a drain electrode at the other end of the AlGaN/GaN heterojunction nanowire of the core-shell structure to form a wrapped source electrode and a wrapped drain electrode;
and preparing a gate dielectric layer between the source electrode and the drain electrode, preparing a gate electrode on the gate dielectric layer to form a wrapping type gate electrode, and annealing to obtain the core-shell structure AlGaN/GaN heterojunction nanowire-based transistor.
9. The production method according to claim 8, wherein the method for producing the source electrode or the drain electrode is independently a magnetron sputtering method or an electron beam evaporation method.
10. The preparation method of claim 8, wherein the method for preparing the gate dielectric layer and the gate electrode is a magnetron sputtering method.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112670342A (en) * | 2020-12-24 | 2021-04-16 | 深圳大学 | High electron mobility transistor and preparation method thereof |
| WO2022104801A1 (en) * | 2020-11-23 | 2022-05-27 | 苏州晶湛半导体有限公司 | Semiconductor device and manufacturing method therefor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080036038A1 (en) * | 2006-03-10 | 2008-02-14 | Hersee Stephen D | PULSED GROWTH OF CATALYST-FREE GROWITH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL |
| US20110169012A1 (en) * | 2007-10-04 | 2011-07-14 | Hersee Stephen D | NANOWIRE AND LARGER GaN BASED HEMTS |
| CN104124272A (en) * | 2014-07-14 | 2014-10-29 | 华南师范大学 | Integrated nonpolar GaN nanowire transistor high in electron mobility and preparation method thereof |
| CN105355657A (en) * | 2015-11-27 | 2016-02-24 | 西安电子科技大学 | Insulated gate AlGaN/GaN high electron mobility transistor with multi-channel fin structure |
| CN106684143A (en) * | 2017-02-17 | 2017-05-17 | 杭州电子科技大学 | Vertical channel heterostructure field-effect transistor and preparation method thereof |
-
2020
- 2020-08-31 CN CN202010895196.0A patent/CN111969056A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080036038A1 (en) * | 2006-03-10 | 2008-02-14 | Hersee Stephen D | PULSED GROWTH OF CATALYST-FREE GROWITH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL |
| US20110169012A1 (en) * | 2007-10-04 | 2011-07-14 | Hersee Stephen D | NANOWIRE AND LARGER GaN BASED HEMTS |
| CN104124272A (en) * | 2014-07-14 | 2014-10-29 | 华南师范大学 | Integrated nonpolar GaN nanowire transistor high in electron mobility and preparation method thereof |
| CN105355657A (en) * | 2015-11-27 | 2016-02-24 | 西安电子科技大学 | Insulated gate AlGaN/GaN high electron mobility transistor with multi-channel fin structure |
| CN106684143A (en) * | 2017-02-17 | 2017-05-17 | 杭州电子科技大学 | Vertical channel heterostructure field-effect transistor and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022104801A1 (en) * | 2020-11-23 | 2022-05-27 | 苏州晶湛半导体有限公司 | Semiconductor device and manufacturing method therefor |
| CN112670342A (en) * | 2020-12-24 | 2021-04-16 | 深圳大学 | High electron mobility transistor and preparation method thereof |
| CN112670342B (en) * | 2020-12-24 | 2023-03-14 | 深圳市红与蓝企业管理中心(有限合伙) | High electron mobility transistor and preparation method thereof |
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