CN219085984U - Gallium nitride high electron mobility transistor - Google Patents

Gallium nitride high electron mobility transistor Download PDF

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CN219085984U
CN219085984U CN202221689805.8U CN202221689805U CN219085984U CN 219085984 U CN219085984 U CN 219085984U CN 202221689805 U CN202221689805 U CN 202221689805U CN 219085984 U CN219085984 U CN 219085984U
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李国强
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Heyuan Choicore Photoelectric Technology Co ltd
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Abstract

A gallium nitride transistor with high electron mobility relates to the technical field of semiconductors; the high-mobility transistor (HEMT) epitaxial wafer comprises an HEMT epitaxial wafer, a source electrode, a grid electrode and a drain electrode, wherein the top of the HEMT epitaxial wafer comprises an AlGaN barrier layer and a passivation layer connected with the upper surface of the AlGaN barrier layer, the source electrode and the drain electrode respectively penetrate through the passivation layer to form ohmic contact with the surface of the AlGaN barrier layer, a semicircular arc gate structure is arranged at the bottom of the grid electrode, and the grid electrode penetrates through the passivation layer and extends to the inside of the AlGaN barrier layer to form Schottky contact. The bottom of the grid electrode is provided with the semicircular arc-shaped grid structure, and the application of the semicircular arc-shaped grid structure can reduce the electron concentration under the grid and at the edge, relieve the electric field concentration effect and improve the breakdown voltage of the device; meanwhile, the thickness of the barrier layer is reduced due to the introduction of the semicircular arc gate structure, the gate control capability and the response speed of the device are improved, and the noise ratio is reduced.

Description

Gallium nitride high electron mobility transistor
Technical Field
The utility model belongs to the technical field of semiconductors, and particularly relates to a gallium nitride transistor with high electron mobility.
Background
With further development of microwave radio frequency technology, the existing Si-based power device cannot meet corresponding performance requirements in the face of working conditions such as high temperature, high voltage, high power, high efficiency and ultra-bandwidth, and in order to meet the development needs of future power devices, the research center of gravity of the microwave power device starts to be turned to a wide-band-gap semiconductor material device from the nineties of the twentieth century.
The third generation semiconductor GaN has the characteristics of large forbidden bandwidth, high breakdown voltage, obvious polarization effect and the like, so that the HEMT device (High Electron Mobility Transistor ) with AlGaN/GaN is particularly suitable for high-frequency high-power application under the high-field condition.
The barrier layer under the gate of the HEMT device with a conventional structure has a certain thickness, and although the concentration of the 2DEG is beneficial to increase, the excessively thick barrier layer is unfavorable for the control capability of the gate, and can limit the improvement of the switching speed of the device and be unfavorable for reducing the noise ratio. In addition, under the off-state high-voltage leakage, the HEMT device with the conventional structure can form a strong electric field peak near the edge of the grid due to the electric field concentration effect of the grid on the drain side. The peak value of the electric field increases along with the increase of the drain voltage until the electric field is higher than the critical breakdown voltage of gallium nitride, and the device is broken down by avalanche breakdown, so that the actual breakdown voltage is far lower than the theoretical breakdown voltage, and the advantages of the high critical breakdown electric field of the GaN material are not fully exerted.
Disclosure of Invention
In order to overcome the defects of the prior art, the utility model aims to provide a gallium nitride high electron mobility transistor which effectively relieves the electric field concentration effect near the edge of a grid electrode, improves the breakdown voltage of the device, improves the grid control capability and response speed of the device and reduces the noise ratio.
The utility model adopts the following technical scheme:
the utility model provides a high electron mobility transistor of gallium nitride, includes HEMT epitaxial wafer, source electrode, grid and drain electrode, HEMT epitaxial wafer top includes AlGaN barrier layer and the passivation layer of being connected with AlGaN barrier layer upper surface, source electrode and drain electrode pass respectively passivation layer and AlGaN barrier layer surface form ohmic contact, the grid bottom is equipped with semicircle arc gate structure, the grid passes the passivation layer just semicircle arc gate structure extends to the AlGaN barrier layer inside and forms schottky contact.
Further, the passivation layer isolates the source, gate and drain electrodes, respectively.
Further, the source electrode and the drain electrode are respectively at least one of Ti, al, ni and Au metals; the grid electrode is Ni and/or Au metal.
Further, the HEMT epitaxial wafer comprises a substrate, a nucleation layer, a buffer layer, a GaN channel layer, an AlGaN barrier layer and a passivation layer which are sequentially laminated from bottom to top.
Further, the substrate is any one of Si, siC, gaN, sapphire and diamond.
Further, the nucleation layer is an AlN layer;
further, the buffer layer is one or a combination of more than two of GaN, alGaN and InGaN; preferably, the combination thereof may be superlattice or alternately stacked;
further, the passivation layer is Si 3 N 4 、AlN、SiO 2 And Al 2 O 3 Any one or a combination of two or more of them; preferably, the combination thereof may be superlattice or alternately stacked.
Further, the thickness of the nucleation layer is 1-5 nm, the thickness of the buffer layer is 2-4 μm, the thickness of the GaN channel layer is 0.1-0.2 μm, the thickness of the AlGaN barrier layer is 0.02-0.03 μm, and the thickness of the passivation layer is 0.2-0.5 μm.
Compared with the prior art, the utility model has the beneficial effects that:
according to the gallium nitride high-electron mobility transistor, the semicircular arc-shaped gate structure is arranged at the bottom of the gate, and the application of the semicircular arc-shaped gate structure can reduce the electron concentration under the gate and at the edge, relieve the electric field concentration effect and improve the breakdown voltage of a device; meanwhile, the thickness of the barrier layer is reduced due to the introduction of the semicircular arc gate structure, the gate control capability and the response speed of the device are improved, and the noise ratio is reduced.
Drawings
Fig. 1 is a schematic structural diagram of a gallium nitride high electron mobility transistor according to the present utility model.
Fig. 2 is a schematic structural diagram of a gallium nitride high electron mobility transistor according to comparative example 1 of the present utility model.
Fig. 3 is a graph comparing transfer characteristics of a gallium nitride high electron mobility transistor according to the present utility model.
1, a substrate; 2. a nucleation layer; 3. a buffer layer; 4. a GaN channel layer; 5. an AlGaN barrier layer; 6. a passivation layer; 7. a source electrode; 8. a gate; 81. a semicircular arc gate structure; 9. and a drain electrode.
Detailed Description
The present utility model will be further described with reference to the following specific embodiments, and it should be noted that, on the premise of no conflict, new embodiments may be formed by any combination of the embodiments or technical features described below.
Example 1
Referring to fig. 1, the gallium nitride high electron mobility transistor comprises a HEMT epitaxial wafer, a source electrode 7, a grid electrode 8 and a drain electrode 9, wherein the top of the HEMT epitaxial wafer comprises an AlGaN barrier layer 5, the source electrode 7 and the drain electrode 9 respectively form ohmic contact with the surface of the AlGaN barrier layer 5, a semicircular arc-shaped grid structure 81 with a semicircular section is arranged at the bottom of the grid electrode 8, and the semicircular arc-shaped grid structure 81 extends into the AlGaN barrier layer 5 to form Schottky contact.
The HEMT epitaxial wafer comprises a substrate 1, a nucleation layer 2, a buffer layer 3, a GaN channel layer 4, an AlGaN barrier layer 5 and a passivation layer 6 which are sequentially stacked from bottom to top, wherein a source electrode 7, a grid electrode 8 and a drain electrode 9 penetrate through the passivation layer 6 to be in contact with the AlGaN barrier layer 5, and the passivation layer 6 is used for isolating the source electrode 7, the grid electrode 8 and the drain electrode 9 respectively.
The preparation method of the gallium nitride high electron mobility transistor comprises the following steps:
1) The preparation method of the HEMT epitaxial wafer comprises the following steps of: a nucleation layer 2, a buffer layer 3, a GaN channel layer 4, an AlGaN barrier layer 5 and a passivation layer 6 are sequentially grown on a substrate 1;
wherein the substrate 1 is Si, the material component of the nucleation layer 2 is AlN, the growth temperature is 950 ℃, and the thickness is 3nm;
the material component of the buffer layer 3 is InGaN, the growth temperature is 1000 ℃, and the thickness is 3 mu m;
the growth temperature of the GaN channel layer 4 is 950 ℃ and the thickness is 0.15 mu m;
the growth temperature of the AlGaN barrier layer 5 is 900 ℃ and the thickness is 0.02 mu m;
the material composition of the passivation layer 6 is Si 3 N 4 The growth temperature was 280℃and the thickness was 0.3. Mu.m.
2) Carrying out chemical corrosion treatment on the passivation layer 6 area corresponding to the source electrode 7 and the drain electrode 9 in the HEMT epitaxial wafer until the AlGaN barrier layer 5 is exposed, so as to obtain a first etched epitaxial wafer;
3) Depositing metal on the etching area of the first etching epitaxial wafer and performing high-temperature annealing in a rapid thermal annealing furnace to form a source electrode 7 and a drain electrode 9 in ohmic contact with the AlGaN barrier layer 5, so as to obtain an electrode epitaxial wafer; the deposition method is to adopt electron beam evaporation to deposit Au metal;
4) Carrying out chemical corrosion treatment on the passivation layer 6 area corresponding to the grid electrode 8 in the electrode epitaxial wafer until the AlGaN barrier layer 5 is exposed, so as to obtain a second etched epitaxial wafer;
5) Continuously coating negative photoresist on the bottom of an etching region of a grid electrode 8 in the second etching epitaxial wafer to combine with a substrate carrying platform to rotate back and forth, photoetching to form a semicircular arc groove in an AlGaN barrier layer 5, and then sputtering Au metal to form the grid electrode 8 which is in Schottky contact with the AlGaN barrier layer 5 to obtain a gallium nitride high electron mobility transistor; the sputtering method adopts an intermediate frequency magnetron sputtering method, and the vacuum degree P is less than or equal to 1.0x10 -3 And under the Pa condition, introducing inert gas argon to carry out glow cleaning, and sputtering Au metal.
Example 2
Referring to fig. 1, the gallium nitride high electron mobility transistor comprises a HEMT epitaxial wafer, a source electrode 7, a grid electrode 8 and a drain electrode 9, wherein the top of the HEMT epitaxial wafer comprises an AlGaN barrier layer 5, the source electrode 7 and the drain electrode 9 respectively form ohmic contact with the surface of the AlGaN barrier layer 5, a semicircular arc gate structure 81 is arranged at the bottom of the grid electrode 8, and the semicircular arc gate structure 81 extends into the AlGaN barrier layer 5 to form Schottky contact.
The HEMT epitaxial wafer comprises a substrate 1, a nucleation layer 2, a buffer layer 3, a GaN channel layer 4, an AlGaN barrier layer 5 and a passivation layer 6 which are sequentially stacked from bottom to top, wherein a source electrode 7, a grid electrode 8 and a drain electrode 9 penetrate through the passivation layer 6 to be in contact with the AlGaN barrier layer 5, and the passivation layer 6 is used for isolating the source electrode 7, the grid electrode 8 and the drain electrode 9 respectively.
The preparation method of the gallium nitride high electron mobility transistor comprises the following steps:
1) The preparation method of the HEMT epitaxial wafer comprises the following steps of: a nucleation layer 2, a buffer layer 3, a GaN channel layer 4, an AlGaN barrier layer 5 and a passivation layer 6 are sequentially grown on a substrate 1;
the substrate 1 is SiC, the material component of the nucleation layer 2 is AlN, the growth temperature is 800 ℃, and the thickness is 1nm;
the material component of the buffer layer 3 is GaN, the growth temperature is 900 ℃, and the thickness is 2 mu m;
the growth temperature of the GaN channel layer 4 is 850 ℃, and the thickness is 0.1 mu m;
the growth temperature of the AlGaN barrier layer 5 is 800 ℃ and the thickness is 0.02 mu m;
the passivation layer 6 is made of AlN, and has a growth temperature of 230 ℃ and a thickness of 0.2um.
2) Carrying out chemical corrosion treatment on the passivation layer 6 area corresponding to the source electrode 7 and the drain electrode 9 in the HEMT epitaxial wafer until the AlGaN barrier layer 5 is exposed, so as to obtain a first etched epitaxial wafer;
3) Depositing metal on the etching area of the first etching epitaxial wafer and performing high-temperature annealing in a rapid thermal annealing furnace to form a source electrode 7 and a drain electrode 9 in ohmic contact with the AlGaN barrier layer 5, so as to obtain an electrode epitaxial wafer; the deposition method is to adopt electron beam evaporation to deposit Ti metal;
4) Carrying out chemical corrosion treatment on the passivation layer 6 area corresponding to the grid electrode 8 in the electrode epitaxial wafer until the AlGaN barrier layer 5 is exposed, so as to obtain a second etched epitaxial wafer;
5) Continuously coating negative photoresist on the bottom of an etching region of a grid electrode 8 in the second etching epitaxial wafer to combine with a substrate carrying platform to rotate back and forth, photoetching to form a semicircular arc groove in an AlGaN barrier layer 5, and sputtering Ni metal to form the grid electrode 8 which is in Schottky contact with the AlGaN barrier layer 5 to obtain a gallium nitride high electron mobility transistor; the sputtering method adopts an intermediate frequency magnetron sputtering method, and the vacuum degree P is less than or equal to 1.0x10 -3 And under the Pa condition, introducing inert gas argon to carry out glow cleaning, and sputtering Ni metal.
Example 3
Referring to fig. 1, the gallium nitride high electron mobility transistor comprises a HEMT epitaxial wafer, a source electrode 7, a grid electrode 8 and a drain electrode 9, wherein the top of the HEMT epitaxial wafer comprises an AlGaN barrier layer 5, the source electrode 7 and the drain electrode 9 respectively form ohmic contact with the surface of the AlGaN barrier layer 5, a semicircular arc gate structure 81 is arranged at the bottom of the grid electrode 8, and the semicircular arc gate structure 81 extends into the AlGaN barrier layer 5 to form Schottky contact.
The HEMT epitaxial wafer comprises a substrate 1, a nucleation layer 2, a buffer layer 3, a GaN channel layer 4, an AlGaN barrier layer 5 and a passivation layer 6 which are sequentially stacked from bottom to top, wherein a source electrode 7, a grid electrode 8 and a drain electrode 9 penetrate through the passivation layer 6 to be in contact with the AlGaN barrier layer 5, and the passivation layer 6 is used for isolating the source electrode 7, the grid electrode 8 and the drain electrode 9 respectively.
The preparation method of the gallium nitride high electron mobility transistor comprises the following steps:
1) The preparation method of the HEMT epitaxial wafer comprises the following steps of: a nucleation layer 2, a buffer layer 3, a GaN channel layer 4, an AlGaN barrier layer 5 and a passivation layer 6 are sequentially grown on a substrate 1;
wherein the substrate 1 is sapphire, the nucleation layer 2 is made of AlN, the growth temperature is 1050 ℃, and the thickness is 5nm;
the material component of the buffer layer 3 is GaN/AlGaN superlattice, the growth temperature is 1100 ℃, and the thickness is 4 mu m;
the growth temperature of the GaN channel layer 4 is 1000 ℃ and the thickness is 0.2 mu m;
the growth temperature of the AlGaN barrier layer 5 is 950 ℃ and the thickness is 0.03 mu m;
the material composition of the passivation layer 6 is SiO 2 The growth temperature is 320 ℃ and the thickness is 0.03um.
2) Carrying out chemical corrosion treatment on the passivation layer 6 area corresponding to the source electrode 7 and the drain electrode 9 in the HEMT epitaxial wafer until the AlGaN barrier layer 5 is exposed, so as to obtain a first etched epitaxial wafer;
3) Depositing metal on the etching area of the first etching epitaxial wafer and performing high-temperature annealing in a rapid thermal annealing furnace to form a source electrode 7 and a drain electrode 9 in ohmic contact with the AlGaN barrier layer 5, so as to obtain an electrode epitaxial wafer; the deposition method is to adopt electron beam evaporation to deposit Al metal;
4) Carrying out chemical corrosion treatment on the passivation layer 6 area corresponding to the grid electrode 8 in the electrode epitaxial wafer until the AlGaN barrier layer 5 is exposed, so as to obtain a second etched epitaxial wafer;
5) Continuously coating negative photoresist on the bottom of an etching region of a grid electrode 8 in the second etching epitaxial wafer to combine with a substrate carrying platform to rotate back and forth, photoetching to form a semicircular arc groove in an AlGaN barrier layer 5, and sputtering Ni and Au metal to form a grid electrode 8 in Schottky contact with the AlGaN barrier layer 5 to obtain a gallium nitride high electron mobility transistor; the sputtering method adopts an intermediate frequency magnetron sputtering method, and the vacuum degree P is less than or equal to 1.0x10 -3 And under the Pa condition, introducing inert gas argon to carry out glow cleaning, and sputtering Ni and Au metals.
Comparative example 1
Referring to fig. 2, the gallium nitride high electron mobility transistor comprises a HEMT epitaxial wafer, a source electrode 7, a grid electrode 8 and a drain electrode 9, wherein the top of the HEMT epitaxial wafer comprises an AlGaN barrier layer 5, the source electrode 7 and the drain electrode 9 respectively form ohmic contact with the surface of the AlGaN barrier layer 5, and the bottom of the grid electrode 8 and the inside of the AlGaN barrier layer 5 form Schottky contact.
The HEMT epitaxial wafer comprises a substrate 1, a nucleation layer 2, a buffer layer 3, a GaN channel layer 4, an AlGaN barrier layer 5 and a passivation layer 6 which are sequentially stacked from bottom to top, wherein a source electrode 7, a grid electrode 8 and a drain electrode 9 penetrate through the passivation layer 6 to be in contact with the AlGaN barrier layer 5, and the passivation layer 6 is used for isolating the source electrode 7, the grid electrode 8 and the drain electrode 9 respectively.
The preparation method of the gallium nitride high electron mobility transistor comprises the following steps:
1) The preparation method of the HEMT epitaxial wafer comprises the following steps of: a nucleation layer 2, a buffer layer 3, a GaN channel layer 4, an AlGaN barrier layer 5 and a passivation layer 6 are sequentially grown on a substrate 1;
wherein the substrate 1 is Si, the material component of the nucleation layer 2 is AlN, the growth temperature is 950 ℃, and the thickness is 3nm;
the material component of the buffer layer 3 is InGaN, the growth temperature is 1000 ℃, and the thickness is 3 mu m;
the growth temperature of the GaN channel layer 4 is 950 ℃ and the thickness is 0.15 mu m;
the growth temperature of the AlGaN barrier layer 5 is 900 ℃ and the thickness is 0.02 mu m;
the material composition of the passivation layer 6 is Si 3 N 4 The growth temperature was 280℃and the thickness was 0.3. Mu.m.
2) Carrying out chemical corrosion treatment on the passivation layer 6 area corresponding to the source electrode 7 and the drain electrode 9 in the HEMT epitaxial wafer until the AlGaN barrier layer 5 is exposed, so as to obtain a first etched epitaxial wafer;
3) Depositing metal on the etching area of the first etching epitaxial wafer and performing high-temperature annealing in a rapid thermal annealing furnace to form a source electrode 7 and a drain electrode 9 in ohmic contact with the AlGaN barrier layer 5, so as to obtain an electrode epitaxial wafer; the deposition method is to adopt electron beam evaporation to deposit Au metal;
4) Carrying out chemical corrosion treatment on the passivation layer 6 area corresponding to the grid electrode 8 in the electrode epitaxial wafer until the AlGaN barrier layer 5 is exposed, and then sputtering Au metal to form the grid electrode 8 which is in Schottky contact with the AlGaN barrier layer 5, so as to obtain the gallium nitride high electron mobility transistor; the sputtering method adopts an intermediate frequency magnetron sputtering method, and the vacuum degree P is less than or equal to 1.0x10 -3 And under the Pa condition, introducing inert gas argon to carry out glow cleaning, and sputtering Au metal.
Performance testing
The gallium nitride high electron mobility transistors of example 1 and comparative example 1 were subjected to a transfer characteristic simulation test, and the results are shown in fig. 3.
Referring to fig. 3, the gallium nitride high electron mobility transistor of the present utility model is provided with a semicircular gate structure, which has great advantages in improving the gate control capability of the device, and the transconductance of the device is from 173mS/mm of the conventional structure (comparative example 1) to 247mS/mm of the structure (example 1) of the present utility model, so that the response speed of the device is effectively improved and the noise ratio is reduced. Meanwhile, the thickness of the barrier layer is reduced by introducing the semicircular arc gate structure, so that the electron concentration under the gate and at the edge is reduced, the electric field concentration effect is relieved, and the voltage resistance of the device is improved to a certain extent.
The above embodiments are only preferred embodiments of the present utility model, and the scope of the present utility model is not limited thereto, but any insubstantial changes and substitutions made by those skilled in the art on the basis of the present utility model are intended to be within the scope of the present utility model as claimed.

Claims (9)

1. The utility model provides a gallium nitride high electron mobility transistor, includes HEMT epitaxial wafer, source electrode, grid and drain electrode, its characterized in that: the top of the HEMT epitaxial wafer comprises an AlGaN barrier layer and a passivation layer connected with the upper surface of the AlGaN barrier layer, the source electrode and the drain electrode respectively penetrate through the passivation layer to form ohmic contact with the surface of the AlGaN barrier layer, a semicircular arc gate structure is arranged at the bottom of the grid electrode, and the grid electrode penetrates through the passivation layer and extends to the inside of the AlGaN barrier layer to form Schottky contact.
2. A gallium nitride high electron mobility transistor according to claim 1, wherein: the passivation layer isolates the source, gate and drain electrodes, respectively.
3. A gallium nitride high electron mobility transistor according to claim 1, wherein: the source electrode is any one of a Ti metal source electrode, an Al metal source electrode, a Ni metal source electrode and an Au metal source electrode; the drain electrode is any one of a Ti metal drain electrode, an Al metal drain electrode, a Ni metal drain electrode and an Au metal drain electrode; the grid electrode is a Ni metal grid electrode or an Au metal grid electrode.
4. A gallium nitride high electron mobility transistor according to claim 1, wherein: the HEMT epitaxial wafer comprises a substrate, a nucleation layer, a buffer layer, a GaN channel layer, an AlGaN barrier layer and a passivation layer which are sequentially laminated from bottom to top.
5. A gallium nitride high electron mobility transistor according to claim 4, wherein: the substrate is any one of Si, siC, gaN, sapphire and diamond.
6. A gallium nitride high electron mobility transistor according to claim 4, wherein: the nucleation layer is an AlN layer.
7. A gallium nitride high electron mobility transistor according to claim 4, wherein: the buffer layer is one of a GaN buffer layer, an AlGaN buffer layer and an InGaN buffer layer.
8. A gallium nitride high electron mobility transistor according to claim 4, wherein: the passivation layer is Si 3 N 4 Passivation layer, alN passivation layer, siO 2 Passivation layer and Al 2 O 3 Any one of the passivation layers.
9. Gallium nitride high electron mobility transistor according to any of claims 4-8, wherein: the thickness of the nucleation layer is 1-5 nm, the thickness of the buffer layer is 2-4 mu m, the thickness of the GaN channel layer is 0.1-0.2 mu m, the thickness of the AlGaN barrier layer is 0.02-0.03 mu m, and the thickness of the passivation layer is 0.2-0.5 mu m.
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