CN113257896A - Multi-field plate radio frequency HEMT device and preparation method thereof - Google Patents

Multi-field plate radio frequency HEMT device and preparation method thereof Download PDF

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CN113257896A
CN113257896A CN202110510963.6A CN202110510963A CN113257896A CN 113257896 A CN113257896 A CN 113257896A CN 202110510963 A CN202110510963 A CN 202110510963A CN 113257896 A CN113257896 A CN 113257896A
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layer
field plate
doped gan
grid
gate
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郭志友
张淼
李渊
马建铖
谭秀洋
夏晓宇
夏凡
黄志辉
丁霄
王鹏霖
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South China Normal University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET

Abstract

The invention relates to a multi-field plate radio frequency HEMT device and a preparation method thereof, the radio frequency HEMT device is provided with a first N-type doped GaN layer and a second N-type doped GaN layer at two side ends of an AlGaN barrier layer, and further a source electrode and a drain electrode are arranged on the first N-type doped GaN layer and the second N-type doped GaN layer to form an N-type source electrode and a drain electrode, so that the 2DEG concentration is improved, the electron mobility is increased, the on-resistance is reduced, the linearity of cut-off frequency is improved, and the device can keep a better working state at high frequency; on the other hand, a first grid field plate and a second grid field plate which are connected to the grid are respectively arranged on two sides of the grid, a P-type doped GaN layer is arranged between the first grid field plate and the barrier layer and between the second grid field plate and the barrier layer, and a source field plate extending to the grid and the grid field plate is arranged on the N-type source electrode, so that the distribution of an electric field is further adjusted, and the breakdown voltage and the cut-off frequency f of the device are improvedt。

Description

Multi-field plate radio frequency HEMT device and preparation method thereof
Technical Field
The invention relates to the field of radio frequency HEMT devices, in particular to a multi-field plate radio frequency HEMT device and a preparation method thereof.
Background
With the development of wireless technology, the GaN radio frequency HEMT device can more effectively meet the requirements of 5G on high power, high communication frequency band, high efficiency and the like. According to the current research, the field plate structure is effectively utilized to adjust the distribution of the electric field, and the cut-off frequency (f) can be improved on the premise of ensuring high breakdown voltageT) And Power Added Efficiency (PAE). How to reasonably arrange the field plate by combining the structure of the radio frequency device to further improve the performance of the radio frequency device so as to expand the application of the GaN HEMT in the radio frequency field is one of the problems to be solved urgently.
Disclosure of Invention
The invention mainly aims to provide a multi-field plate radio frequency HEMT device and a preparation method thereof. According to the radio frequency HEMT device, the first N-type doped GaN layer and the second N-type doped GaN layer are arranged at two side ends of the AlGaN barrier layer, and then the source electrode and the drain electrode are arranged on the first N-type doped GaN layer and the second N-type doped GaN layer to form the N-type source electrode and the drain electrode, so that the 2DEG concentration is improved, the electron mobility is increased, the on resistance is reduced, the linearity of cut-off frequency is improved, and the device can keep a good working state at high frequency. On the other hand, a first gate field plate and a second gate field plate connected to the gate are respectively arranged on two sides of the gate, a P-type doped GaN layer is arranged between the first and second gate field plates and the barrier layer,the source electrode field plate extending to the grid electrode and the grid electrode field plate is arranged on the N-type source electrode, so that the distribution of an electric field is further adjusted, and the breakdown voltage and the cut-off frequency f of the device are improvedt. Based on the above purpose, the invention at least provides the following technical scheme:
a multi-field plate radio frequency HEMT device, comprising: a substrate; an AlGaN buffer layer on the substrate; a GaN channel layer on the AlGaN buffer layer; the first N-type doped GaN layer, the AlGaN barrier layer and the second N-type doped GaN layer are positioned on the GaN channel layer; a source electrode and a source field plate connected to the source electrode, located on the first N-type doped GaN layer; the drain electrode is positioned on the second N-type doped GaN layer; the grid and a grid field plate connected to the grid are positioned on the AlGaN barrier layer;
a first passivation layer is arranged between the grid electrode and the AlGaN barrier layer, and a P-type doped GaN layer is arranged between the grid field plate and the AlGaN barrier layer; one end of the source field plate is connected to the source electrode, and the other end of the source field plate extends to the side, close to the drain electrode, of the gate field plate across the gate.
The gate field plates include a first gate field plate and a second gate field plate; one end of the first grid field plate is connected to the grid, and the other end of the first grid field plate extends to be close to the source electrode; one end of the second gate field plate is connected to the gate, and the other end extends close to the drain electrode.
The first N-type doped GaN layer, the AlGaN barrier layer and the second N-type doped GaN layer are arranged on the GaN channel layer at the same layer, and the AlGaN barrier layer is positioned between the first N-type doped GaN layer and the second N-type doped GaN layer.
A first P-type doped GaN layer is arranged between the first gate field plate and the AlGaN barrier layer, and a second P-type doped GaN layer is arranged between the second gate field plate and the AlGaN barrier layer.
Preferably, the thickness of the first P-type doped GaN layer is equal to the thickness of the second P-type doped GaN layer.
The thickness of the P-type doped GaN layer is 40 nm-50 nm; the thickness of the first passivation layer is 20 nm-30 nm.
Preferably, the thickness of the N-type doped GaN layer is equal to that of the AlGaN barrier layer, and the thickness of the N-type doped GaN layer is 20 nm-30 nm.
A second passivation layer is disposed between the source and source field plates, the gate and gate field plate, and the drain electrode.
The Al component of the AlGaN barrier layer is preferably 20% to 30%; the Al composition of the AlGaN buffer layer is preferably 5% to 10%.
The preparation method of the multi-field plate radio frequency HEMT device comprises the following steps:
sequentially epitaxially growing an AlGaN buffer layer and a GaN channel layer on a substrate;
depositing a first mask layer on the GaN channel layer to form a first mask pattern;
epitaxially growing an AlGaN barrier layer on the GaN channel layer;
depositing a second mask layer to form a second mask pattern, and etching to remove the first mask pattern;
epitaxially growing an N-type doped GaN layer, and etching to remove the second mask pattern;
depositing a third mask layer to form a growth window of the P-type doped GaN layer;
epitaxially growing a P-type doped GaN layer, and etching to remove the third mask layer;
depositing a fourth mask layer to form a gate growth window, and etching the fourth mask layer at the gate growth window to a target thickness to form a first passivation layer;
depositing a grid metal;
forming a grid field plate window and depositing grid field plate metal;
depositing a second passivation layer to form source and drain windows;
depositing source and drain metals;
forming a source field plate window and depositing source field plate metal;
the second passivation layer is thickened.
Drawings
Fig. 1 is a schematic cross-sectional structure diagram of a multi-field plate radio frequency HEMT device according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings, and the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, other embodiments obtained by persons of ordinary skill in the art without any creative effort belong to the protection scope of the present invention. The experimental methods described in the following examples are all conventional methods unless otherwise specified; the reagents and materials, unless otherwise indicated, are commercially available from a public disclosure. The present invention will be described in further detail below.
Spatially relative terms, such as "below," "lower," "above," "over," "upper," and the like, may be used in this specification to explain the positioning of one element relative to a second element. These terms are intended to encompass different orientations of the device in addition to different orientations than those depicted in the figures.
In addition, terms such as "first", "second", and the like, are used to describe various elements, layers, regions, sections, and the like and are not intended to be limiting. The use of "having," "containing," "including," and the like, are open-ended terms that indicate the presence of stated elements or features, but do not exclude additional elements or features. Unless the context clearly dictates otherwise.
An embodiment of the present invention provides a multi-field plate radio frequency HEMT device, referring to fig. 1, including a substrate 1, an AlGaN buffer layer 2 and a GaN channel layer 3 laminated on the substrate 1, a first N-type doped GaN layer 52, an AlGaN barrier layer 4, and a second N-type doped GaN layer 51 are disposed on the GaN channel layer 3 at the same layer, and the AlGaN barrier layer 4 is disposed between the first N-type doped GaN layer 52 and the second N-type doped GaN layer 51.
The substrate 1 is preferably a silicon substrate. The Al component of the AlGaN buffer layer 2 is preferably 5% to 10%, and the thickness thereof is 1.5 μm to 2.5 μm. The thickness of the GaN channel layer is 0.6-1.0 μm. The Al component of the AlGaN barrier layer 4 is preferably 20 to 30% and the thickness thereof is preferably 20 to 30 nm. Preferably, the thicknesses of the first N-type doped GaN layer 52 and the second N-type doped GaN layer 51 are equal to the thickness of the AlGaN barrier layer 4.
Further comprising a source electrode and a source field plate connected to the source electrode, a drain electrode and a gate field plate connected to the gate electrode, the source electrode and the source field plate 7 being on the first N-doped GaN layer 52, the drain electrode 6 being on the second N-doped GaN layer 51 and the gate electrode and the gate field plate 10 being on the AlGaN barrier layer 4. Specifically, a first passivation layer 91 is disposed between the gate and the AlGaN barrier layer 4, and a P-type doped GaN layer is disposed between the gate field plate and the AlGaN barrier layer 4. One end of the source field plate is connected to the source electrode and the other end extends across the gate to the side of the gate field plate near the drain electrode 6.
Preferably, the gate and gate field plate 10 are T-shaped in cross-section, as shown in fig. 1, the gate field plate includes a first gate field plate and a second gate field plate, which are located on both sides of the gate. One end of the first grid field plate is connected to the grid, and the other end of the first grid field plate extends to be close to the source electrode; one end of the second gate field plate is connected to the gate, and the other end extends close to the drain. A first P-type doped GaN layer 82 is disposed between the first gate field plate and the AlGaN barrier layer, and a second P-type doped GaN layer 81 is disposed between the second gate field plate and the AlGaN barrier layer. Preferably, the thickness of the first P-type doped GaN layer 82 is equal to that of the second P-type doped GaN layer 81, and is 40nm to 50 nm. The thickness of the first passivation layer 91 is 20nm to 30 nm.
In another embodiment, the thickness of the first P-doped GaN layer 82 is not equal to the thickness of the second P-doped GaN layer 81, and accordingly, the position of the gate field plate thereon moves with the thickness of the P-doped GaN layer.
A second passivation layer 92 is arranged between the structure consisting of the gate and gate field plate 10, the first P-doped GaN layer 82, the second P-doped GaN layer 81 and the first passivation layer 91 and the source and source field plate 7, the drain electrode 8 and the AlGaN barrier layer 4. The first passivation layer 91 and the second passivation layer 92 are preferably Si3N4。
The radio frequency HEMT device adopts a structure of multiple field plates, the arrangement of the source field plate and the grid field plate adjusts the distribution of electric fields, and improves the breakdown voltage and cut-off frequency ft. In addition, the arrangement of the N-type source electrode and the drain electrode can improve the 2DEG concentration and enhance the electron mobility, so that the on-resistance is reduced, the linearity of cut-off frequency is improved, and the device can keep a better working state at high frequency.
Based on the multi-field plate radio frequency HEMT device, an embodiment of the invention also provides a preparation method of the device, which comprises the following steps:
firstly, selecting a Si substrate, sequentially placing the Si substrate in acetone, isopropyl ketone and hydrofluoric acid solution for ultrasonic cleaning, then placing the Si substrate in mixed solution of hydrogen peroxide and sulfuric acid for soaking, finally placing the Si substrate in hydrofluoric acid for soaking, washing with deionized water, and drying with nitrogen.
And then, growing an AlGaN buffer layer on the Si substrate by adopting a metal organic chemical vapor deposition process. Specifically, H is introduced2、NH3The growth thickness of the AlGaN buffer layer is 2 mu m, and the molar content of the Al element is 7 percent.
And continuously growing a GaN channel layer on the AlGaN buffer layer. Introduction of H2、NH3A gallium source, a growth temperature is set to 920 ℃, a pressure is set to 40Torr, and H is set2Flow rate 500sccm, NH3The flow rate of the gallium source is 5000sccm, the flow rate of the gallium source is 220sccm, and the growth thickness is 8 μm.
And depositing a first mask layer on the GaN channel layer, wherein the first mask layer is silicon oxide. And etching the first mask layer to form a barrier layer growth window.
And continuing to grow the AlGaN barrier layer. Specifically, H is introduced2、NH3The growth temperature of the gallium source and the aluminum source is set to 920 ℃, the growth thickness is 25nm, and the molar content of the Al element is preferably 25%.
And etching to remove the first mask layer, preferably removing the first mask layer by a dry etching process. A second mask layer, preferably silicon oxide, is deposited on the AlGaN barrier layer. And etching the second mask layer to form an N-type doped GaN layer growth window.
And continuously growing the N-type doped GaN layer. Specifically, H is introduced2、NH3Gallium source, growth temperature is set to 920 ℃, pressure is 40Torr, H2Flow rate 500sccm, NH3The flow rate of the gallium source is 5000sccm, the flow rate of the gallium source is 220sccm, and the growth thickness is 25 nm. At this time, the N-type doped GaN layer and the AlGaN barrier layer are arranged on the same layer and are positioned on two sides of the AlGaN barrier layer.
And etching to remove the second mask layer, preferably removing the first mask layer by a dry etching process.
And depositing a third mask layer to form a growth window of the P-type doped GaN layer. The third mask layer is preferably silicon oxide.
Epitaxially growing a P-type doped GaN layer, specifically, introducing H2、NH3And the growth temperature of the gallium source is set to 920 ℃, and the growth thickness is 45 nm.
And etching to remove the third mask layer. A fourth mask layer is deposited, preferably of silicon nitride. Spin-coating a photoresist layer, forming a gate window by photoetching, and etching the fourth mask layer at the gate window to a target thickness, wherein the target thickness is preferably 25 nm.
Depositing Ti/Ni/Au metal combination, preferably by electron beam evaporation process, with vacuum degree set to less than 1.8 × 10- 3Pa, power range of 200-1000W, evaporation rate of
Figure BDA0003060377900000071
And (3) soaking the metal epitaxial wafer after deposition in an acetone solution for 20min, then carrying out ultrasonic cleaning, washing with ultrapure water and drying with nitrogen to form the metal grid.
And continuing to spin the photoresist layer, and photoetching to form a gate field plate window. The Ti/Ni/Au metal combination is deposited by an electron beam evaporation process deposition method. The photoresist layer is then removed to form a gate field plate structure connected to the gate.
A passivation layer, preferably silicon nitride, is deposited. Spin coating a photoresist layer, forming source and drain windows by soft baking, exposure and development, followed by deposition of a Ti/Ni/Au metal combination using an electron beam evaporation process. Setting the vacuum degree to be less than 1.8 multiplied by 10-3Pa, power range of 200-1000W, evaporation rate of
Figure BDA0003060377900000072
And then soaking the epitaxial wafer deposited with the metal in an acetone solution to remove the photoresist layer, and finally washing with ultrapure water and drying with nitrogen.
And continuing to spin the photoresist layer, and forming a source field plate window through soft baking, exposure and development. And (3) continuing to select an electron beam evaporation process to deposit a Ti/Ni/Au metal combination, soaking the epitaxial wafer with the evaporated metal of the source field plate in an acetone solution for 20min, then carrying out ultrasonic cleaning, washing with ultra-pure water and drying with nitrogen, and finally obtaining the source field plate connected to the source electrode.
And then 100 nm-150 nm SiN is deposited as a passivation layer at 300 ℃ by a PECVD process.
And finally, photoetching the surface of the epitaxial wafer on which the source, the drain and the grid are formed to obtain a thickened electrode pattern, and thickening the electrode by adopting electron beam evaporation to finish the manufacture of the device shown in the figure 1.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.

Claims (10)

1. A multi-field plate radio frequency HEMT device, comprising:
a substrate;
an AlGaN buffer layer on the substrate;
a GaN channel layer on the AlGaN buffer layer;
the first N-type doped GaN layer, the AlGaN barrier layer and the second N-type doped GaN layer are positioned on the GaN channel layer;
a source electrode and a source field plate connected to the source electrode, located on the first N-type doped GaN layer;
the drain electrode is positioned on the second N-type doped GaN layer;
the grid and a grid field plate connected to the grid are positioned on the AlGaN barrier layer;
a first passivation layer is arranged between the grid electrode and the AlGaN barrier layer, and a P-type doped GaN layer is arranged between the grid field plate and the AlGaN barrier layer; one end of the source field plate is connected to the source electrode, and the other end of the source field plate extends to the side, close to the drain electrode, of the gate field plate across the gate.
2. The multi-field plate radio frequency HEMT device of claim 1, wherein said gate field plate comprises a first gate field plate and a second gate field plate; one end of the first grid field plate is connected to the grid, and the other end of the first grid field plate extends to be close to the source electrode; one end of the second gate field plate is connected to the gate, and the other end extends close to the drain electrode.
3. The multi-field plate radio frequency HEMT device of claim 1 or 2, wherein the first N-doped GaN layer, the AlGaN barrier layer and the second N-doped GaN layer are disposed on the GaN channel layer in the same layer, the AlGaN barrier layer being located between the first N-doped GaN layer and the second N-doped GaN layer.
4. The multi-field plate radio frequency HEMT device of claim 1 or 2, wherein a first P-doped GaN layer is disposed between said first gate field plate and AlGaN barrier layer and a second P-doped GaN layer is disposed between said second gate field plate and AlGaN barrier layer.
5. The multi-field plate radio frequency HEMT device of claim 4, wherein said first P-doped GaN layer has a thickness equal to the thickness of said second P-doped GaN layer.
6. The multi-field plate radio frequency HEMT device of claim 5, wherein said P-type doped GaN layer is 40nm to 50nm thick; the thickness of the first passivation layer is 20 nm-30 nm.
7. The multi-field plate radio frequency HEMT device of claim 1 or 2, wherein said N-doped GaN layer preferably has a thickness equal to the thickness of said AlGaN barrier layer, which is between 20nm and 30 nm.
8. The multi-field plate radio frequency HEMT device of claim 1 or 2, wherein a second passivation layer is disposed between the source and source field plates, the gate and gate field plate, and the drain electrode.
9. The multi-field plate radio frequency HEMT device of claim 1 or 2, wherein the AlGaN barrier layer preferably has an Al composition of 20% to 30%; the Al composition of the AlGaN buffer layer is preferably 5% to 10%.
10. The preparation method of the multi-field plate radio frequency HEMT device is characterized by comprising the following steps:
sequentially epitaxially growing an AlGaN buffer layer and a GaN channel layer on a substrate;
depositing a first mask layer on the GaN channel layer to form a first mask pattern;
epitaxially growing an AlGaN barrier layer on the GaN channel layer;
depositing a second mask layer to form a second mask pattern, and etching to remove the first mask pattern;
epitaxially growing an N-type doped GaN layer, and etching to remove the second mask pattern;
depositing a third mask layer to form a growth window of the P-type doped GaN layer;
epitaxially growing a P-type doped GaN layer, and etching to remove the third mask layer;
depositing a fourth mask layer to form a gate growth window, and etching the fourth mask layer at the gate growth window to a target thickness to form a first passivation layer;
depositing a grid metal;
forming a grid field plate window and depositing grid field plate metal;
depositing a second passivation layer to form source and drain windows;
depositing source and drain metals;
forming a source field plate window and depositing source field plate metal;
the second passivation layer is thickened.
CN202110510963.6A 2021-05-11 2021-05-11 Multi-field plate radio frequency HEMT device and preparation method thereof Pending CN113257896A (en)

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