CN113270494B - Double-gradient-channel gallium nitride-based vertical-structure radio frequency device and preparation method thereof - Google Patents
Double-gradient-channel gallium nitride-based vertical-structure radio frequency device and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7788—Vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
Abstract
The invention provides a gallium nitride-based vertical structure radio frequency device with double gradient channels and a preparation method thereof. And the vertical HEMT device mainly bears withstand voltage through a PN junction in the device, so that the problem of electric leakage of the buffer layer is effectively reduced, a high field region cannot be formed in a GaN region near the grid, breakdown caused by the electric field concentration effect of the grid is avoided, the specific on-resistance is reduced, and the performance of the device is improved.
Description
Technical Field
The invention relates to the field of semiconductor devices, in particular to a radio frequency device with a double-gradient-channel gallium nitride-based vertical structure and a preparation method thereof.
Background
The heterojunction formed by AlGaN/GaN provides a channel for carriers due to different band gaps. Meanwhile, because of the large energy gap of gallium nitride, the gallium nitride has high breakdown electric field. And because of the high saturation rate of the current carrier in the channel, the GaN HEMT can work under the extremely high frequency, so the GaN HEMT gradually becomes the mainstream of the radio frequency power amplifier of the 5G base station.
According to recent studies, al is used x Ga 1-x The heterojunction formed by the N gradual change layer and the GaN can generate three-dimensional electron gas (3 DEG), effectively adjusts the distribution of an electric field, and improves the cut-off frequency and the power additional efficiency on the premise of ensuring high breakdown voltage. The double-channel structure is beneficial to reducing the resistance of a source electrode-grid electrode channel of the device, so that the transconductance and the linearity of cut-off frequency of the device are improved. Therefore, how to apply the heterojunction formed by the graded layer and the GaN and the double-channel structure to the field of radio frequency devices to improve the performance of the devices is one of the problems to be solved in the present invention.
Disclosure of Invention
The invention mainly aims to provide a double gradient channel gallium nitride-based vertical structure radio frequency device, which forms three-dimensional electron gas in a vertical structure by arranging a laminated structure of a first Al component gradient channel layer, a second Al component gradient channel layer and a first GaN layer between a first source electrode and a second source electrode, and adjusts the distribution of an electric field, thereby improving the breakdown voltage and the cut-off frequency. And the vertical HEMT device mainly bears withstand voltage through a PN junction in the device, so that the problem of electric leakage of the buffer layer is effectively reduced, a high field region cannot be formed in a GaN region near the grid, breakdown caused by the electric field concentration effect of the grid is avoided, the specific on-resistance is reduced, and the performance of the device is improved. The Al component of the first graded layer gradually increases from the top to the bottom, so that the connectivity between the two channels is ensured; in addition, the double channels reduce the channel resistance between the source gates, thereby improving the transfer resistance and cut-off frequency linearity of the device and keeping better power performance and linearity under high frequency.
In order to achieve the purpose, the invention at least provides the following technical scheme:
two gradual change channel gallium nitride base vertical construction radio frequency devices includes:
a substrate; the drain electrode is arranged on one surface of the substrate; the GaN nucleating layer is arranged on the surface of the substrate opposite to the drain electrode; the first p-type GaN current blocking region and the second p-type GaN current blocking region are respectively arranged on two sides of the surface of the GaN nucleating layer; the n-type GaN region is arranged between the first p-type GaN current blocking region and the second p-type GaN current blocking region and is positioned on the surface of the GaN nucleation layer; the first source electrode and the second source electrode are respectively arranged on the surfaces of the first p-type GaN current blocking region and the second p-type GaN current blocking region; the first GaN layer, the first Al component gradient channel layer, the second GaN layer and the second Al component gradient channel layer are sequentially laminated on the surfaces of the n-type GaN region and the p-type GaN current blocking region and are positioned between the first source electrode and the second source electrode; and the grid electrode is arranged on the second Al component gradient channel layer and is positioned between the first source electrode and the second source electrode.
The first Al composition gradient channel layer is made of AlGaN material, and the Al composition of the first Al composition gradient channel layer is changed from 0to 0.15 along the direction in which the second GaN layer points to the first GaN layer.
The second Al composition gradual change channel layer is made of AlGaN material, and the Al composition of the second Al composition gradual change channel layer is changed from 0to 0.15 along the direction of the first GaN layer pointing to the second GaN layer.
The first passivation region and the second passivation region are respectively located on two sides of the surface of the second Al component gradual change channel layer.
The GaN cap layer is positioned between the first passivation region and the second passivation region and is arranged on the surface of the second Al component gradient channel layer.
The thicknesses of the first p-type GaN current blocking region, the n-type GaN current blocking region and the second p-type GaN current blocking region are all 0.8-1.2 microns.
The thicknesses of the first GaN layer and the second GaN layer are both 5-10 nm; the thicknesses of the first Al component gradient channel layer and the second Al component gradient channel layer are both 4-8 nm.
The width of the first passivation region and the second passivation region is 1.5-2.5 micrometers; the material of the passivation region is preferably silicon nitride.
The substrate is preferably a Si substrate; and an AlN buffer layer is also arranged between the substrate and the GaN nucleating layer.
The invention also provides a preparation method of the radio frequency device with the double gradient channel gallium nitride-based vertical structure, which comprises the following steps:
epitaxially growing an AlN buffer layer on the Si substrate;
sequentially epitaxially growing a GaN nucleating layer and a p-type GaN current blocking layer on the AlN buffer layer;
etching the p-type GaN current blocking layer to form a first p-type GaN current blocking region and a second p-type GaN current blocking region on two sides of the surface of the GaN layer;
epitaxially growing n-type GaN between the first and second p-type GaN current blocking regions;
forming a first source electrode on the surface of the first p-type GaN current blocking region, and forming a second source electrode on the surface of the second p-type GaN current blocking region;
sequentially growing a first GaN layer, a first Al component gradient channel layer, a second GaN layer, a second Al component gradient channel layer and a GaN cap layer on the p-type GaN current blocking region and the n-type GaN between the first source electrode and the second source electrode;
etching two ends of the GaN cap layer to form a first groove and a second groove respectively;
forming first and second passivation layer regions in the first and second trenches;
forming a grid electrode on the surface of the GaN cap layer between the first passivation layer region and the second passivation layer region;
and forming a drain electrode on the surface of the Si substrate opposite to the grid electrode.
In the vertical device structure, after the AlGaN gradient layer and the GaN layer form a heterojunction, three-dimensional electron gas (3 DEG) is generated, and the distribution of an electric field is adjusted, so that the cut-off frequency is improved; the double gradient channels reduce the channel resistance between the current carrier channels, improve the transfer resistance and cut-off frequency linearity of the device, and keep excellent power performance and frequency linearity under high frequency. The vertical HEMT device effectively reduces the problem of electric leakage of the buffer layer, effectively improves the breakdown voltage, reduces the specific on-resistance and improves the performance of the device.
Drawings
Fig. 1 is a schematic cross-sectional view of a dual graded channel gallium nitride-based vertical structure radio frequency device according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings, and the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, other embodiments obtained by persons of ordinary skill in the art without any creative effort belong to the protection scope of the present invention. The experimental methods described in the following examples are all conventional methods unless otherwise specified; the reagents and materials, unless otherwise indicated, are commercially available from a public disclosure.
Spatially relative terms, such as "under," "below," "lower," "over," "above," "upper," and the like, may be used herein to explain the positioning of one element relative to a second element. These terms are intended to encompass different orientations of the device in addition to different orientations than those depicted in the figures.
In addition, terms such as "first", "second", and the like, are used to describe various elements, layers, regions, sections, and the like and are not intended to be limiting. The use of "having," "containing," "including," "comprising," and the like, are open-ended terms that specify the presence of stated elements or features, but do not exclude additional elements or features. Unless the context clearly dictates otherwise.
Referring to fig. 1, an embodiment of the present invention provides a dual graded channel gallium nitride-based vertical structure radio frequency device, including a substrate 2, preferably a Si substrate; the AlN buffer layer 3 is arranged on the substrate 2, and the AlN buffer layer 3 is grown by adopting a pulse type epitaxial process. The drain electrode 1 is provided on the surface of the substrate 2 opposite to the AlN buffer layer 3. The drain electrode is preferably a Ti/Al/Ni/Au metal combination.
The GaN nucleating layer 4 is arranged on the buffer layer 3, and the thickness of the GaN nucleating layer is 0.8-1.2 μm. A first p-type GaN current blocking region 51 and a second p-type GaN current blocking region 52 respectively disposed on two sides of the surface of the GaN nucleation layer 4; an n-type GaN region (not shown) is disposed between the first and second p-type GaN current blocking regions 51 and 52 on the surface of the GaN nucleation layer, the first and second p-type GaN current blocking regions having a thickness of 0.8 to 1.2 μm. The thickness of the n-type GaN region is 0.8 to 1.2 μm.
The first source electrode 101 and the second source electrode 102 are respectively disposed on partial surfaces of the first p-type GaN current blocking region 51 and the second p-type GaN current blocking region 52, and the source electrodes are preferably a Ti/Al/Ni/Au metal combination.
The first GaN layer 6, the first Al composition graded channel layer 7, the second GaN layer 8, and the second Al composition graded channel layer 9 are sequentially stacked on the surfaces of the n-type GaN region and the p-type GaN current blocking regions 51, 52 between the first source electrode 101 and the second source electrode 102. The thickness of the first GaN layer 6 and the second GaN layer 8 is 5nm to 10nm. The first Al composition graded channel layer 7 is an AlGaN material, and the Al composition thereof changes from 0to 0.15 in a direction in which the second GaN layer 8 is directed toward the first GaN layer 6. The second Al composition graded channel layer 9 is an AlGaN material, and the Al composition thereof changes from 0to 0.15 in a direction in which the first GaN layer 6 points to the second GaN layer 8. The first and second Al composition graded channel layers have a thickness of 4 to 8nm. After the AlGaN graded layer and the GaN layer form a heterojunction, three-dimensional electron gas (3 DEG) is generated, the graded layer is changed into a graded channel, and the distribution of an electric field is adjusted, so that the cut-off frequency is improved; the Al component of the first graded layer is gradually increased from the grid side to the drain side, so that the connectivity between the two channels is ensured. Meanwhile, the channel resistance between the current carrier channels can be reduced through the double gradient channels, the transfer resistance and cut-off frequency linearity of the radio frequency device are improved, and excellent power performance and frequency linearity are kept under high frequency.
A GaN cap layer 11 and a gate electrode 12 are sequentially stacked on the second Al composition graded channel layer 9, between the first source electrode 101 and the second source electrode 102. The thickness of the GaN cap layer 11 is 2nm to 5nm. The gate 12 is preferably a combination of Ti/Al/Ni/Au metals. The first passivation region 131 and the second passivation region 132 are respectively located at both sides of the surface of the second Al composition graded channel layer 9. The first passivation region 131 is located between the first source electrode 101 and the stack of the GaN cap layer 11 and the gate electrode 12, and the second passivation region 132 is located between the second source electrode 102 and the stack of the GaN cap layer 11 and the gate electrode 12. The material of the passivation region is preferably silicon nitride. The vertical HEMT device effectively reduces the problem of buffer layer electric leakage, effectively improves breakdown voltage, reduces specific on resistance and improves the performance of the device.
Based on the vertical type HEMT radio frequency device, a preparation method of the device is described in detail below. The method specifically comprises the following steps:
and selecting a Si substrate. Firstly, ultrasonically cleaning a Si substrate in acetone, isopropyl ketone and hydrofluoric acid solution in sequence, soaking the Si substrate in mixed solution of hydrogen peroxide and sulfuric acid, finally soaking the Si substrate in hydrofluoric acid, washing the Si substrate with deionized water, and drying the Si substrate with nitrogen.
Then, a Metal Organic Chemical Vapor Deposition (MOCVD) process is selected to grow a thin layer of Al on the Si substrate. Specifically, the Si substrate was placed in a reaction chamber and heated to 940 ℃ in H 2 Heating for 10min under atmosphere to remove oxide film on the surface of the substrate, and introducing TMAl at 1060 deg.C for 12s.
And then raising the temperature to 1070 ℃ to grow an AlN buffer layer on the Al layer. TMA was continuously supplied during the growth of the AlN buffer layer, while NH was supplied 3 Adopts a pulse type introduction mode, namely NH is introduced in the T1 time respectively 3 NH during T2 time 3 Not into the reaction chamber. Conditions were TMA flow of 13sccm, NH 3 The flow rate is 800sccm, T 1 Time is 12s, T 2 6s, the AlN buffer layer was grown to a thickness of 160nm.
And continuing to epitaxially grow a GaN nucleating layer on the AlN layer. The growth temperature is 920 ℃, the pressure is 40Torr 2 The flow rate was 500sccm, NH 3 The flow rate of the gallium source is 5000sccm, the flow rate of the gallium source is 220sccm, and the growth thickness is 0.8-1.2 μm.
Next, a p-type GaN Current Blocking Layer (CBL) with a thickness of 1 μm was deposited on the GaN nucleation layer, and then the CBL was ICP etched to form trenches with a width of 16 μm and a thickness of 1 μm in the middle region of the CBL, thereby forming a first p-type GaN current blocking region and a second p-type GaN current blocking region. The growth temperature of the CBL is 920 ℃, the pressure is 40Torr, the hydrogen flow is 5000sccm, the ammonia flow is 5000sccm, and the gallium source flow is 220sccm. The coil power and platen power of the ICP system were set to 50W and 15W, respectively.
And then covering the CBL areas on the two sides by using a mask, and continuously growing an n-type GaN layer with the thickness of 1 mu m in the groove area by using a metal organic chemical vapor deposition process. The growth temperature was 920 ℃, the pressure was 40Torr, the hydrogen flow was 5000sccm, the ammonia flow was 5000sccm, and the gallium source flow was 220sccm.
Then pass throughAnd photoresist throwing, soft baking, exposing and developing to form source windows in the CBL areas on the two sides, and depositing a Ti/Al/Ni/Au metal combination by using an electron beam evaporation instrument to enable the source electrodes to be arranged at the two ends of the device. In this step, the degree of vacuum is less than 1.8X 10 -3 Pa, power range of 200-1000W, evaporation rate of
And then soaking the epitaxial wafer with the evaporated ohmic contact metal in an acetone solution for 20min, then carrying out ultrasonic cleaning, washing with ultrapure water and drying with nitrogen to realize metal stripping. Subsequently, ohmic contact annealing was performed for 30 seconds at 850 ℃ in a nitrogen atmosphere to form first and second source electrodes.
Then, the source electrodes at two ends are covered by using a mask, and a GaN layer is grown on the CBL layer by using a metal organic chemical vapor deposition process. The growth temperature is 920 ℃, the pressure is 40Torr 2 The flow rate was 500sccm, NH 3 The flow rate of the gallium source is 5000sccm, the flow rate of the gallium source is 220sccm, and the growth thickness is 5 nm-10 nm.
Continuously covering the source electrode by using a mask, and growing a gradually changed Al with the Al element molar content x of 15-0% on the GaN layer x Ga 1-x The N layer grows to be 4-8nm thick, the flow rate of TEGa is 40sccm, the flow rate of TMA is gradually reduced, the growth temperature is gradually reduced, the initial growth temperature is 1060 ℃, and the reduction amplitude is 20 ℃.
Continuously keeping the mask to cover the source electrodes at two ends, and gradually changing Al x Ga 1-x And growing a GaN layer on the N layer. The temperature is 920 ℃, the pressure is 40Torr 2 The flow rate was 500sccm, NH 3 The flow rate of the gallium source is 5000sccm, the flow rate of the gallium source is 220sccm, and the growth thickness is 5 nm-10 nm.
Continuously growing the gradually changed Al on the GaN layer y Ga 1-y And N layers. Introduction of H 2 、NH 3 Gallium source, aluminum source, growing gradually-changed Al with the thickness of 4 nm-8 nm and the molar content y of Al element of 0-15 percent y Ga 1-y And N layers. In this step, the flow rate of TMA was gradually increased.
Then gradually changing Al y Ga 1-y N layerAnd epitaxially growing a GaN cap layer. The temperature was 920 ℃, the pressure was 40Torr, the hydrogen flow was 5000sccm, the ammonia flow was 5000sccm, and the gallium source flow was 220sccm.
And carrying out ICP etching on the GaN cap layer, etching two ends of the GaN cap layer, which are adjacent to the source electrode, and forming a groove with the width of 2 mu m and the thickness of 200 nm.
And continuously covering the source electrodes at two ends, depositing SiN with the thickness of 225nm as a passivation layer and a high-temperature ICP etching mask by a Plasma Enhanced Chemical Vapor Deposition (PECVD) process at 300 ℃, and etching off the passivation layer on the surface of the GaN cap layer.
Then, forming a grid window by throwing photoresist, soft baking, exposing and developing, and then depositing a Ti/Al/Ni/Au metal combination by using an electron beam evaporation instrument, and setting the vacuum degree to be less than 1.8 multiplied by 10 -3 Pa, power range of 200-1000W, evaporation rate of
Depositing Ti/Al/Ni/Au metal. And soaking the epitaxial wafer with the evaporated metal in an acetone solution for 20min, then carrying out ultrasonic cleaning, then washing with ultrapure water and drying with nitrogen, and finally obtaining the grid.
And reversing the epitaxial wafer, photoetching a leakage area on the substrate, etching a leakage window, depositing a Ti/Al/Ni/Au metal combination by using an electron beam evaporation instrument, depositing Ti/Al/Ni/Au, and forming a drain electrode after stripping and annealing.
And finally, photoetching the surface of the epitaxial wafer which is formed into the source, the drain and the grid to obtain a thickened electrode pattern, and thickening the electrode by adopting electron beam evaporation to finish the manufacture of the device shown in the figure 1.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (5)
1. Two gradual change channel structure gallium nitride base vertical type HEMT radio frequency device, its characterized in that includes:
a Si substrate;
the drain electrode is arranged on one surface of the substrate;
an AlN buffer layer provided on a surface of the substrate opposite to the drain electrode;
a GaN nucleation layer arranged on the surface of the AlN buffer layer;
the first p-type GaN current blocking region and the second p-type GaN current blocking region are respectively arranged on two sides of the surface of the GaN nucleating layer;
the n-type GaN region is arranged between the first p-type GaN current blocking region and the second p-type GaN current blocking region and is positioned on the surface of the GaN nucleation layer;
the first source electrode and the second source electrode are respectively arranged on the surfaces of the first p-type GaN current blocking region and the second p-type GaN current blocking region;
the first GaN layer, the first Al component gradient channel layer, the second GaN layer and the second Al component gradient channel layer are sequentially laminated on the surfaces of the n-type GaN region and the p-type GaN current blocking region and are positioned between the first source electrode and the second source electrode, the first Al component gradient channel layer is made of AlGaN material, the Al component of the first Al component gradient channel layer changes from 0to 0.15 along the direction of the second GaN layer pointing to the first GaN layer, the second Al component gradient channel layer is made of AlGaN material, and the Al component of the second Al component gradient channel layer changes from 0to 0.15 along the direction of the first GaN layer pointing to the second GaN layer;
the first passivation region and the second passivation region are respectively positioned on two sides of the surface of the second Al component gradient channel layer; the GaN cap layer is positioned between the first passivation region and the second passivation region and is arranged on the surface of the second Al component gradient channel layer;
and the grid electrode is arranged on the second Al component gradient channel layer and is positioned between the first source electrode and the second source electrode.
2. The gallium nitride-based vertical HEMT radio frequency device according to claim 1, wherein the first p-type GaN current blocking region, the n-type GaN region and the second p-type GaN current blocking region are all 0.8-1.2 μm thick.
3. The gallium nitride-based vertical HEMT radio-frequency device according to claim 1 or 2, wherein the first GaN layer and the second GaN layer are both 5 to 10nm thick; the thicknesses of the first Al component gradient channel layer and the second Al component gradient channel layer are both 4 to 8nm.
4. The gallium nitride-based vertical HEMT radio-frequency device with the double graded channel structure according to claim 1 or 2, wherein the width of the first passivation region and the second passivation region is 1.5 μm to 2.5 μm; the material of the passivation region is preferably silicon nitride.
5. The preparation method of the gallium nitride-based vertical HEMT radio frequency device with the double gradient channel structure is characterized by comprising the following steps of:
epitaxially growing an AlN buffer layer on the Si substrate;
sequentially epitaxially growing a GaN nucleating layer and a p-type GaN current blocking layer on the AlN buffer layer;
etching the p-type GaN current blocking layer to form a first p-type GaN current blocking region and a second p-type GaN current blocking region on two sides of the surface of the GaN nucleating layer;
epitaxially growing n-type GaN between the first and second p-type GaN current blocking regions;
forming a first source electrode on the surface of the first p-type GaN current blocking region, and forming a second source electrode on the surface of the second p-type GaN current blocking region;
sequentially growing a first GaN layer, a first Al component gradient channel layer, a second GaN layer, a second Al component gradient channel layer and a GaN cap layer on a p-type GaN current blocking region and an n-type GaN between a first source electrode and a second source electrode, wherein the first Al component gradient channel layer is made of AlGaN material, the Al component of the first Al component gradient channel layer changes from 0to 0.15 along the direction of the second GaN layer pointing to the first GaN layer, the second Al component gradient channel layer is made of AlGaN material, and the Al component of the second Al component gradient channel layer changes from 0to 0.15 along the direction of the first GaN layer pointing to the second GaN layer;
etching two ends of the GaN cap layer to form a first groove and a second groove respectively;
forming first and second passivation layer regions in the first and second trenches;
forming a grid electrode on the surface of the GaN cap layer between the first passivation layer region and the second passivation layer region;
and forming a drain electrode on the surface of the Si substrate opposite to the grid electrode.
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