CN112680721A - Electrode assembly of PECVD (plasma enhanced chemical vapor deposition) coating machine - Google Patents
Electrode assembly of PECVD (plasma enhanced chemical vapor deposition) coating machine Download PDFInfo
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- CN112680721A CN112680721A CN202011264211.8A CN202011264211A CN112680721A CN 112680721 A CN112680721 A CN 112680721A CN 202011264211 A CN202011264211 A CN 202011264211A CN 112680721 A CN112680721 A CN 112680721A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides an electrode assembly of a PECVD (plasma enhanced chemical vapor deposition) coating machine, which comprises a vacuum furnace chamber for coating operation, wherein at least two stations related to a silicon wafer are arranged in the vacuum furnace chamber, a firing station of the silicon wafer is also a loading station of the silicon wafer, the silicon wafer is loaded into a hollowed-out support plate through a translation mechanism, the hollowed-out support plate comprises a plurality of hollowed-out support plates, the hollowed-out support plates are vertically arranged on the loading station of the silicon wafer and are uniformly distributed at equal intervals to form a silicon wafer carrier, at least one hollowed-out part and one installation part are arranged on a single hollowed-out support plate, the hollowed-out part is positioned in the middle of the hollowed-out support plate, the installation part is positioned on one. According to the invention, a vertical wafer feeding mode and a horizontal wafer inserting mode are adopted, the alternating opposite insertion of the silicon wafer and the electrode wafer is completed in the vacuum furnace cavity, and for the film coating process, the atmosphere control can be carried out from the wafer inserting process to the film coating process, so that the film coating environment can be adjusted, and the film coating quality can be improved.
Description
Technical Field
The invention relates to a film coating machine, in particular to passive film coating equipment for the surface of a solar cell.
Background
The plasma enhanced chemical vapor deposition system ionizes gas containing film constituent atoms by means of microwave or radio frequency and the like to form a plasma structure locally, the plasma structure is strong in chemical activity and easy to react, and a desired film is deposited on a substrate. In order to allow chemical reactions to proceed at lower temperatures, the reactivity of the plasma structure is exploited to promote the reactions, and thus such CVD is known as plasma structure enhanced chemical vapor deposition (PECVD).
In the solar photovoltaic industry, PECVD is often employed to prepare antireflective films such as silicon nitride films, silicon carbide films, silicon oxide films, and the like; the traditional PECVD coating film is usually a single-sided coating film, the requirement on the single-sided performance of the film is high, the traditional production equipment is easy to cause winding coating, and the problem of sticking and spot printing cannot be avoided. Meanwhile, the problems of silicon chip deformation, high fragment rate and the like in the production process are easily caused to the ultrathin silicon chip.
Disclosure of Invention
The invention aims to solve the technical problem of providing an electrode assembly of a PECVD (plasma enhanced chemical vapor deposition) film plating machine, which can overcome the problems in the background art.
The technical scheme adopted by the invention for solving the technical problem is as follows:
an electrode assembly of a PECVD coating machine comprises a vacuum furnace chamber used for coating operation, wherein at least two stations related to a silicon wafer are arranged in the vacuum furnace chamber, one of the stations is a preloading station of the silicon wafer, the other station is a firing station of the silicon wafer, the firing station of the silicon wafer is also a loading station of the silicon wafer, the silicon wafer is loaded into a hollowed-out support plate through a translation mechanism on the loading station of the silicon wafer, the hollowed-out support plate comprises a plurality of hollowed-out support plates, the hollowed-out support plates are vertically arranged on the loading station of the silicon wafer and are uniformly distributed at equal intervals to form a silicon wafer carrier, at least one hollowed-out part and one installation part are arranged on a single hollowed-out support plate, the hollowed-out part is positioned in the middle of the hollowed-out support plate, the installation part is positioned on; the mounting part is fixed on a support plate lifting assembly, the support plate lifting assembly is mounted on one side of a vacuum furnace chamber, an electrode pushing mechanism is arranged at the bottom of the vacuum furnace chamber, a preloading device of an electrode plate is arranged on the electrode pushing mechanism, preloading parts of a silicon wafer are equidistantly arranged on the preloading device, the preloading parts comprise vertically arranged plasma electrodes, preloading stations of the electrode plate are equidistantly arranged along the height direction of the plasma electrodes, the preloading stations of the electrode plate comprise clamping grooves capable of transversely mounting the silicon wafer, and the distance between the clamping grooves is the same as that between the hollowed-out support plates; the upper end of the plasma electrode is connected to the plasma structure through a plasma electrode post; and a vacuumizing interface is arranged at the bottom of the vacuum furnace chamber.
Further, the fretwork support plate includes square frame and the cross support of setting in square frame, the cross support will the space that square frame encloses separates into four equidistant square fretwork areas, and square frame and cross support all adopt quartz material to make, and square frame and cross support's width is no longer than 1/10 of single fretwork area width to guarantee to reserve sufficient surface area for the firing of silicon chip, square frame and cross support's thickness is not less than silicon chip thickness.
Furthermore, each hollowed-out area is internally provided with a clamping point, the clamping point is arranged in the middle of the edge of each hollowed-out area and is arranged close to the lower bottom surface in the thickness direction of the hollowed-out empty plate, each clamping point comprises a semicircular sheet, the clamping points are also supported by a quartz material, and the width of each clamping point is not more than 2 times of the thickness of the silicon wafer.
Furthermore, the mounting part is arranged in the middle of the outer side of one side of the square frame, two mounting holes are formed in the mounting part, the size and the shape of the two mounting holes are consistent, and the two mounting holes are symmetrically arranged along the center of the square frame.
Further, the carrier elevating assembly includes a first elevating driving motor installed on an elevating driving bracket, which may be assumed to be at an upper portion of the vacuum chamber, a first cavity welding flange is arranged at the mounting part of the lifting driving bracket and the vacuum furnace cavity, the first lifting driving motor is connected with and drives a carrier plate lifting driving rod, the uppermost end of the carrier plate lifting driving rod is connected with the first dynamic sealing flange, the support plate lifting driving rod passes through the first cavity welding flange and extends into the vacuum furnace cavity, the lower end of the support plate lifting driving rod is fixedly connected to the mounting part of the uppermost layer of the hollowed-out support plate, simultaneously, the lower extreme fixedly connected with of support plate lift actuating lever can pass the mounting hole's on the installation position of all fretwork support plates installation pole, and the bottom fixed connection of two installation poles is on the installation position of the fretwork support plate of lower floor.
Furthermore, the output end of the lifting driving motor is connected with a floating joint, the lower end of the floating joint is fixedly connected with a first dynamic sealing flange, the lower end of the first dynamic sealing flange is fixedly connected with a support plate lifting driving rod, and a welding corrugated pipe is arranged between the first dynamic sealing flange and the cavity sealing flange on the outer side of the support plate lifting driving rod and used for protecting the support plate lifting driving rod and guiding the moving track of the floating joint; the inner side of the lifting driving support is provided with a lifting linear guide rail, and the dynamic sealing flange can move along the lifting linear guide rail, so that the lifting linear direction is further stabilized.
Further, the coating machine still includes support plate lift module, support plate lift module includes the module lifter, and the upper end of module lifter is equipped with second lift driving motor, be equipped with the lift slide rail on the module lifter along its direction of height, install lift module anchor clamps on the lift slide rail, lift module anchor clamps are located the both sides of lift slide rail respectively, lift module anchor clamps can be connected to the lift drive support through the connecting block (not shown, can adopt conventional steelwork) respectively to can drive the lift drive support and reciprocate thereby make support plate lifting unit reciprocates, reciprocating of support plate lifting unit can drive fretwork support plate group upwards leave the vacuum furnace chamber or get into the vacuum furnace chamber downwards.
Furthermore, one side of the bottom of the vacuum furnace chamber is provided with a transverse pushing open hole, the electrode pushing mechanism can push a plasma electrode inwards through the transverse pushing open hole, the outer side of the transverse pushing open hole is sealed through a second cavity welding flange, the outer end of the second cavity welding flange is in butt joint with a second movable sealing flange, the outer end of the second movable sealing flange is in butt joint with a cylinder mounting flange, the electrode pushing mechanism further comprises an electrode pushing cylinder, the electrode pushing cylinder is mounted on the cylinder mounting flange, the output end of the electrode pushing cylinder penetrates through the cylinder mounting flange and is connected to a cylinder connecting shaft, the cylinder connecting shaft penetrates through the second movable sealing flange and extends into the second cavity welding flange, an electrode pushing rod is connected inside the second cavity welding flange, one side of the lower end of the plasma electrode is provided with a boosting plate, and the lower surface of the plasma electrode is provided with a transverse sliding block, the bottom of vacuum furnace chamber is equipped with electrode translation guide rail, horizontal slider with electrode translation guide rail matches, electrode propelling movement pole can support the boosting board and promote the plasma electrode edge electrode translation guide rail inwards moves.
Furthermore, the plasma electrode comprises a plasma electrode positive electrode block and a plasma electrode negative electrode block, the plasma electrode positive electrode block and the plasma electrode negative electrode block are both installed and fixed on the bottom plate, a certain distance is reserved between the plasma electrode positive electrode block and the plasma electrode negative electrode block, a plurality of steps are respectively arranged on one side of the plasma electrode positive electrode block and one side of the plasma electrode negative electrode block facing the inside of the vacuum furnace body at equal intervals, a clamping groove capable of transversely installing a silicon wafer is formed between the adjacent steps, each step at least comprises a first boss and a second boss from bottom to top, the second boss protrudes out of the first boss, a slope is arranged at the step corner of the second boss, the height of the first boss on the plasma electrode positive electrode block is smaller than that of the first boss on the plasma electrode negative electrode block, and the height of the second boss on the plasma electrode positive electrode block is larger than that of the second boss on the plasma electrode negative electrode block, the same silicon wafer can be clamped by the two electrode blocks at the same time, and the upper surface and the lower surface of the same silicon wafer are respectively touched by the plasma electrode positive electrode block and the plasma electrode negative electrode block.
Further, a platen is arranged on the upper surface of the vacuum furnace chamber, a feeding port is formed in the platen and communicated with the inside of the vacuum furnace chamber, and the feeding port can allow the silicon wafer carrier to move up and down so as to enter or exit the inside of the furnace chamber; the plasma structure is installed on a platen of a vacuum furnace chamber and comprises a plasma structure support and a plasma structure driving cylinder, a sliding mechanism of a plasma electrode post and the plasma electrode post is arranged on the plasma structure support, the plasma structure electrode post can penetrate through the platen and extend into the vacuum furnace chamber, and the plasma structure electrode post can slide along the sliding mechanism under the driving of the plasma structure driving cylinder and touch the plasma electrode in the vacuum furnace chamber.
The invention has the beneficial effects that:
(1) according to the invention, a vertical wafer feeding mode and a horizontal wafer inserting mode are adopted, the alternating opposite insertion of the silicon wafer and the electrode wafer is completed in the vacuum furnace cavity, and for the film coating process, the atmosphere control can be carried out from the wafer inserting process to the film coating process, so that the film coating environment can be adjusted, and the film coating quality can be improved.
(2) The invention designs the hollow carrier for loading the silicon wafer, so that the upper surface and the lower surface of the silicon wafer can be exposed for coating production, the coating yield is improved by times, and meanwhile, the problem of plating winding can be effectively avoided by horizontal coating.
(3) The electrode column is provided with the clamping grooves in a staggered mode, so that the electrode plate can be conducted while the electrode column is clamped, meanwhile, the electrode plate is fixed through the two points, and the horizontal stability of the electrode plate can be facilitated.
Drawings
Fig. 1 is an overall structural view of the present invention.
FIG. 2 is a schematic view of the silicon wafer carrier of the present invention being loaded into a vacuum chamber.
Fig. 3 is a side view of fig. 2.
Fig. 4 is a schematic view of a hollow carrier.
Fig. 5 is a schematic view of a carrier plate lifting mechanism of the present invention.
Fig. 6 is a schematic view of the electrode pushing mechanism of the present invention.
Reference numbers in the figures: a vacuum furnace chamber 100, a preloading station 101, a firing station 102, a loading station 103, a hollowed-out carrier plate 104, a hollowed-out part 105, an installation part 106, a square frame 107, a cross-shaped support 108, a hollowed-out region 109, a clamping point 110, an installation hole 111, a vacuumizing interface 112, a transverse pushing opening 113, an electrode translation guide rail 114, a silicon wafer 200, a plasma electrode 300, an electrode sheet 301, a plasma electrode positive electrode block 302, a plasma electrode negative electrode block 303, a bottom plate 304, a step 305, a first boss 3051, a second boss 3052, a salient point 3053, a slope 3054, an electrode sheet loading station 306, a boost plate 307, a transverse sliding block 308, a carrier plate lifting assembly 400, a first lifting drive motor 401, a lifting drive support 402, a first cavity welding flange 403, a carrier plate lifting drive rod 404, a first dynamic sealing flange 405, an installation rod 406, a floating joint 407, a welding bellows 408, a lifting linear guide rail 409, the plasma structure comprises a sealing ring 410, an output end 411 of a first lifting driving motor, a bedplate 500, a feeding port 501, a carrier plate lifting module 600, a module lifting rod 601, a second lifting driving motor 602, a lifting slide rail 603, a furnace door 700, an electrode pushing mechanism 800, a second cavity welding flange 801, a second movable sealing flange 802, a cylinder mounting flange 803, an electrode pushing cylinder 804, an output end 805 of the electrode pushing cylinder, a cylinder connecting shaft 806, an electrode pushing rod 807, a movable sealing flange end cover 808, a dynamic sealing ring 809, a dynamic sealing ring press ring 810, a plasma structure 900, a plasma structure support 901, a plasma structure driving cylinder 902, a plasma electrode post 903 and a plasma structure translation guide rail 904.
Detailed Description
The following detailed description of the embodiments of the present invention is provided in conjunction with the accompanying drawings, and it should be noted that the embodiments are merely detailed descriptions of the present invention for the purpose of better understanding and implementing the present invention by those skilled in the art, and should not be construed as limiting the present invention.
As shown in fig. 1-3, the present invention provides an electrode assembly of a PECVD coater, comprising a vacuum furnace chamber 100 for coating operation, wherein at least two stations related to a silicon wafer are arranged in the vacuum furnace chamber 100, one of the stations is a pre-loading station 101 of the silicon wafer, the other is a firing station 102 of the silicon wafer, a loading station 103 of the silicon wafer is arranged above the firing station 102 of the silicon wafer, on the loading station 103 of the silicon wafer, the silicon wafer 200 is loaded into a hollow carrier plate 104 by a silicon wafer translation mechanism in the prior art, the hollow carrier plate 104 comprises a plurality of hollow carrier plates 104, the plurality of hollow carrier plates 104 are arranged above and below the loading station 103 of the silicon wafer and are uniformly distributed at equal intervals to form a silicon wafer carrier, a single hollow carrier plate 104 is at least provided with a hollow part 105 and a mounting part 106, the hollow part 105 is located in the middle of the hollow carrier plate 104, the mounting positions of the plurality of hollow-out carrier plates 104 are located on the same side of the hollow-out carrier plates.
As shown in fig. 4, the hollowed-out carrier plate 104 includes a square frame 107 and a cross-shaped support 108 disposed in the square frame 107, the cross-shaped support 108 divides a space enclosed by the square frame 107 into four equidistant square hollowed-out areas, both the square frame 107 and the cross-shaped support 108 are made of quartz material, the widths of the square frame 107 and the cross-shaped support 108 do not exceed 1/10 of the width of a single hollowed-out area 109 (after separation), so as to ensure that a sufficient surface area is left for firing a silicon wafer, and the thicknesses of the square frame and the cross-shaped support are not less than the thickness of a silicon wafer.
Each hollow-out area 109 is internally provided with a clamping point 110, the clamping point 110 is arranged in the middle of the edge of each hollow-out area 109 and is arranged close to the lower bottom surface in the thickness direction of the hollow-out carrier plate 104, the clamping point 110 comprises a semicircular sheet, the clamping point 110 is also supported by a quartz material, the width of the clamping point 110 is not more than 2 times of the thickness of a silicon wafer, when the hollow-out carrier plate 104 is loaded with the silicon wafer, the silicon wafer can be placed into each hollow-out area 109 and is blocked by the clamping point 110, and the hollow-out carrier plate 104 loaded with the silicon wafer thickness is as shown in fig. 1.
The mounting portion 106 is disposed in the middle of the outer side of one side of the square frame 107, two mounting holes 111 are disposed on the mounting portion 106, and the two mounting holes 111 are identical in size and shape and are symmetrically disposed along the center of the square frame 107.
The mounting portion 106 is fixed on the carrier plate elevating assembly 400, the carrier plate elevating assembly 400 is mounted on one side of the vacuum furnace chamber 100, as shown in fig. 5, the carrier plate elevating assembly 400 includes a first elevating driving motor 401, the first elevating driving motor 401 is mounted on an elevating driving bracket 402, the elevating driving bracket 402 can be erected on the upper portion of the vacuum furnace chamber 100, the bottom end of the elevating driving bracket 402 is fixedly connected to the upper surface of the furnace door 700, a first chamber welding flange 403 is arranged at the mounting portion of the elevating driving bracket 402 and the vacuum furnace chamber 100, the first elevating driving motor 403 is connected to and drives the carrier plate elevating driving rod 404, the uppermost end of the carrier plate elevating driving rod 404 is connected to a first dynamic sealing flange 405, the carrier plate elevating driving rod 404 penetrates through the first chamber welding flange 403 and extends into the vacuum furnace chamber 100, the lower end of the support plate lifting driving rod 404 is fixedly connected to the mounting position of the hollowed-out support plate 104 on the uppermost layer, meanwhile, the lower end of the support plate lifting driving rod 404 is fixedly connected with two mounting rods 406 capable of penetrating through the mounting holes 111 on the mounting positions of all the hollowed-out support plates 104, the bottom ends of the two mounting rods 406 are fixedly connected to the mounting position of the hollowed-out support plate 104 on the lowermost layer, and the lower end of the first cavity welding flange 403 can be welded and fixed on the oven door 700.
The output end 411 of the first lifting driving motor 401 is connected with a floating joint 407, the lower end of the floating joint 407 is fixedly connected with a first movable sealing flange 405, the lower end of the first movable sealing flange 405 is fixedly connected with a carrier plate lifting driving rod 404, a welding corrugated pipe 408 is arranged between the first movable sealing flange 405 and a first cavity sealing flange 403 on the outer side of the carrier plate lifting driving rod 404 and is used for protecting the carrier plate lifting driving rod 404 and guiding the moving track of the floating joint, and sealing rings 410 are arranged on the contact surfaces of the welding corrugated pipe 408 and the first cavity sealing flange 403 as well as the contact surfaces of the welding corrugated pipe 408 and the first movable sealing flange 405 to ensure the air tightness of the communication with the interior of the vacuum furnace body 100; the inner side of the lifting driving bracket 402 is provided with a lifting linear guide rail 409, and the first dynamic sealing flange 405 can move along the lifting linear guide rail 409, so that the lifting linear direction is further stabilized.
The film plating machine of the invention also comprises a carrier plate lifting module 600, wherein the carrier plate lifting module 600 comprises a module lifting rod 601, the upper end of the module lifting rod 601 is provided with a second lifting driving motor 602, a lifting slide rail 603 is arranged on the module lifting rod 601 along the height direction thereof, a lifting module clamp 604 is arranged on the lifting slide rail 603, the lifting module clamps 604 are respectively located at two sides of the lifting slide rail 603, the lifting module clamps 604 can be respectively connected to the lifting driving bracket 402 through connecting blocks (not shown, and common square steel pieces can be adopted according to actual size and connection requirement), and can drive the lifting driving bracket 402 to move up and down so as to move the carrier plate lifting assembly 400 up and down, the up-and-down movement of the support plate lifting assembly 400 can drive the hollow support plate group (silicon wafer carrier) formed by the hollow support plates 104 to move upwards away from the vacuum furnace chamber 100 or downwards into the vacuum furnace chamber 100.
The upper surface of the vacuum furnace chamber is provided with a bedplate 500, the bedplate is provided with a feeding port 501, the feeding port 501 is communicated with the inside of the vacuum furnace chamber 100, and the feeding port 501 can allow the silicon wafer carrier to move up and down so as to enter or exit the inside of the vacuum furnace chamber 100; when the silicon wafer carrier enters the vacuum chamber 100, the furnace door 700 may seal the feeding port 501, it should be noted that the furnace door 700 is actually solid, and in order not to block the structural schematic of the lower part, the furnace door in fig. 1 only shows the outline frame of the furnace door 700.
The bottom of the vacuum furnace cavity 100 is provided with an electrode pushing mechanism, the electrode pushing mechanism is provided with a pre-loading device of an electrode slice, the pre-loading device is provided with pre-loading parts of the electrode slice at equal intervals, the pre-loading parts comprise vertically arranged plasma electrodes 300, each plasma electrode comprises a plasma electrode positive electrode block 302 and a plasma electrode negative electrode block 303, the plasma electrode positive electrode blocks 302 and the plasma electrode negative electrode blocks 303 are both installed and fixed on a bottom plate 304 and are spaced at a certain distance, one sides of the plasma electrode positive electrode blocks 302 and the plasma electrode negative electrode blocks 303 facing the inside of the vacuum furnace body are respectively provided with a plurality of steps 305 at equal intervals, a clamping groove capable of transversely installing the electrode slice 301 is formed between the adjacent steps 305, each step 305 at least comprises a first boss 3051 and a second boss 3052 and a first boss 3051 of the previous step and a first boss 3051 of the next step from bottom to top, wherein the second boss 3052 protrudes from the first boss 3051 and the second boss 3052 protrudes from the first boss 3051 of the previous step A clamping groove for clamping the electrode plate 301 is formed between the two electrode plates, a convex point 3053 is arranged on the lower surface of the second boss 3052 and used for supporting the electrode plate, a slope 3054 is arranged at the step corner of the first boss 3051 to prevent the electrode plate from being scratched, the height of the first boss 3 on the plasma electrode positive electrode block 302 is smaller than that of the first boss on the plasma electrode negative electrode block, the height of the second boss on the plasma electrode positive electrode block is larger than that of the two bosses on the plasma electrode negative electrode block, the plasma electrode positive electrode block 302 and the step 305 on the plasma electrode negative electrode block 303 are arranged in a staggered mode to form a loading station 306 with a plurality of electrode plates as shown in fig. 3, so that the same silicon wafer can be clamped by the two steps 305 on the two sides at the same time, namely the upper surface and the lower surface of the same silicon wafer can be respectively touched by the plasma electrode positive electrode block 302 and the plasma electrode negative electrode block 303.
As shown in fig. 3, a vacuum interface 112 is disposed below the bottom of the vacuum furnace chamber 100 and is used for vacuumizing the sealed furnace body, a transverse pushing opening 113 is disposed on the other side of the bottom of the vacuum furnace chamber 100, and the electrode pushing mechanism 800 can push the plasma electrode 300 inwards through the transverse pushing opening 113.
As shown in fig. 6, the outer side of the transverse pushing opening 113 is sealed by a second cavity welding flange 801, the outer end of the second cavity welding flange 801 is abutted against a second movable sealing flange 802, the outer end of the second movable sealing flange 802 is abutted against a cylinder mounting flange 803, the electrode pushing mechanism 800 further comprises an electrode pushing cylinder 804, the electrode pushing cylinder 804 is mounted on the cylinder mounting flange 803, the output end 805 of the electrode pushing cylinder 804 penetrates through the cylinder mounting flange 803 and is connected to a cylinder connecting shaft 806, the cylinder connecting shaft 806 penetrates through the second movable sealing flange 802 and extends into the second cavity welding flange 801, an electrode pushing rod 807 is connected inside the second cavity welding flange 801, the position where the cylinder connecting shaft 806 is connected with the output end 805 of the electrode pushing cylinder 804 is dynamically sealed and fixed by a movable sealing flange end cover 808, at least two dynamic sealing rings 809 are arranged on the contact surface of the movable sealing flange end cover 808 sealing cylinder connecting shaft 806, the dynamic sealing ring 809 has excellent wear resistance, can seal in a moving state, and does not influence the smoothness of movement, for example, the dynamic sealing ring 809 can be matched with a lubricant to realize solid-liquid combined sealing, and a dynamic sealing ring pressing ring 810 can be arranged between the dynamic sealing rings 809 to form a solid-liquid combined sealing element.
As shown in fig. 1-3, a boost plate 307 is disposed on one side of the lower end of the plasma electrode 300, a transverse slider 308 is fixedly disposed on the lower surface of the bottom plate 304 of the plasma electrode 300, an electrode translation guide rail 114 is disposed at the bottom of the vacuum furnace chamber, the transverse slider 308 is matched with the electrode translation guide rail 114, and the electrode push rod 807 can push against the boost plate 307 and push the plasma electrode 300 to move inward along the electrode translation guide rail 114.
As shown in fig. 1-3, the plasma structure 900 is mounted on a platen 500 of a vacuum furnace chamber, the plasma structure includes a plasma structure support 901 and a plasma structure driving cylinder 902, the plasma structure support 901 is provided with a plasma electrode column 903 and a plasma structure translation guide rail 904, the plasma structure electrode column 904 can penetrate through the platen 500 and extend into the vacuum furnace chamber 100, the plasma structure electrode column 904 can slide up and down along the plasma structure translation guide rail 904 under the driving of the plasma structure driving cylinder 902, and can touch the plasma electrode 300 in the vacuum furnace chamber 100 as shown in fig. 3, so as to conduct and realize plasmatization of gas and perform a diffusion process.
When the PECVD equipment is used, firstly, as shown in figure 1, a sucker in the prior art or other modes are adopted for loading silicon wafers, after the silicon wafers are filled, a silicon wafer carrier and the silicon wafers on the silicon wafer carrier are moved downwards to enter a vacuum furnace chamber 100, then the interior of the furnace body is vacuumized from a vacuumizing interface 112, an air inlet and outlet device can be arranged on a furnace door 700 according to the mode in the prior art, reaction gas and protective gas are introduced according to the requirements, then, a motor pushing mechanism is started, a motor is pushed to the position overlapped with the silicon wafer carrier, at the moment, a motor layer and a silicon wafer layer are arranged at intervals to form a reaction station, and after a plasma electrode is pushed in place, the position of a plasma electrode column 904 on a plasma structure 900 is adjusted (the plasma electrode columns 904 are also arranged in pairs and are arranged at intervals, and the plasma electrode columns 904 corresponding to a positive electrode and a negative electrode are respectively communicated with an electrode positive electrode block 302 and a plasma electrode negative electrode block 303) And electrifying to enable the reaction gas to be in a plasma state for diffusion reaction, releasing tail gas after reaction is finished, withdrawing the electrode, and lifting the silicon wafer carrier out of the furnace.
Claims (8)
1. An electrode assembly of a PECVD coating machine comprises a vacuum furnace chamber for coating operation, and is characterized in that at least two stations related to a silicon wafer are arranged in the vacuum furnace chamber, wherein one station is a preloading station of the silicon wafer, the other station is a firing station of the silicon wafer, a loading station of the silicon wafer is arranged above the firing station of the silicon wafer, the silicon wafer is loaded into a hollowed-out support plate on the loading station of the silicon wafer through a translation mechanism, the hollowed-out support plate comprises a plurality of hollowed-out support plates, the hollowed-out support plates are vertically arranged on the loading station of the silicon wafer and are uniformly distributed at equal intervals to form a silicon wafer carrier, at least one hollowed-out part and one mounting part are arranged on a single hollowed-out support plate, the hollowed-out part is positioned in the middle of the hollowed-out support plate, the mounting parts are;
the mounting part is fixed on a support plate lifting assembly, the support plate lifting assembly is mounted on one side of a vacuum furnace chamber, an electrode pushing mechanism is arranged at the bottom of the vacuum furnace chamber, a preloading device of an electrode plate is arranged on the electrode pushing mechanism, preloading parts of the electrode plate are arranged on the preloading device at equal intervals, the preloading parts comprise vertically arranged plasma electrodes, preloading stations of the electrode plate are arranged on the plasma electrodes at equal intervals along the height direction of the plasma electrodes, the preloading stations of the electrode plate comprise clamping grooves capable of transversely mounting the electrode plate, and the intervals of the clamping grooves are the same as the intervals of the hollowed-out support plate; the upper end of the plasma electrode is connected to the plasma structure through a plasma electrode post; the bottom of the vacuum furnace chamber is provided with a vacuumizing interface;
one side of the bottom of the vacuum furnace chamber is provided with a transverse pushing open hole, an electrode pushing mechanism can push a plasma electrode inwards through the transverse pushing open hole, the outer side of the transverse pushing open hole is sealed through a second cavity welding flange, the outer end of the second cavity welding flange is in butt joint with a second movable sealing flange, the outer end of the second movable sealing flange is in butt joint with a cylinder mounting flange, the electrode pushing mechanism further comprises an electrode pushing cylinder, the electrode pushing cylinder is mounted on the cylinder mounting flange, the output end of the electrode pushing cylinder penetrates through the cylinder mounting flange and is connected to a cylinder connecting shaft, the cylinder connecting shaft penetrates through the second movable sealing flange and extends into the second cavity welding flange and is connected with an electrode pushing rod inside the second cavity welding flange, one side of the lower end of the plasma electrode is provided with a boosting plate, the lower surface of the plasma electrode is provided with a transverse sliding block, and the bottom of the vacuum furnace chamber is provided, the transverse sliding block is matched with the electrode translation guide rail, and the electrode pushing rod can push against the boosting plate and push the plasma electrode to move inwards along the electrode translation guide rail;
the plasma electrode comprises a plasma electrode positive electrode block and a plasma electrode negative electrode block, the plasma electrode positive electrode block and the plasma electrode negative electrode block are both fixedly installed on the bottom plate, a certain distance is reserved between the plasma electrode positive electrode block and the plasma electrode negative electrode block, a plurality of steps are respectively arranged on one side of the plasma electrode positive electrode block and one side of the plasma electrode negative electrode block facing the inside of the vacuum furnace body at equal intervals, a clamping groove capable of transversely installing a silicon wafer is formed between every two adjacent steps, each step at least comprises a first boss and a second boss from bottom to top, the second boss protrudes out of the first boss, a slope is arranged at a step corner of the second boss, the height of the first boss on the plasma electrode positive electrode block is smaller than that of the first boss on the plasma electrode negative electrode block, in addition, the height of the second boss on the plasma electrode positive electrode block is larger than that of the second boss on the plasma electrode negative electrode block, the same silicon wafer can be clamped by the two electrode blocks at the same time, and the upper surface and the lower surface of the same silicon wafer are respectively touched by the plasma electrode positive electrode block and the plasma electrode negative electrode block.
2. The electrode assembly of claim 1, wherein the hollow carrier comprises a square frame and a cross-shaped support disposed in the square frame, the cross-shaped support divides a space enclosed by the square frame into four equidistant square hollow areas, the square frame and the cross-shaped support are both made of quartz material, the width of the square frame and the width of the cross-shaped support are not more than 1/10 of the width of a single hollow area, so as to ensure that a sufficient surface area is left for firing silicon wafers, and the thickness of the square frame and the thickness of the cross-shaped support are not less than the thickness of the silicon wafers.
3. The electrode assembly of claim 1, wherein each of the plurality of hollow-out areas has a clamping point disposed at a central portion of an edge of each of the plurality of hollow-out areas and disposed adjacent to the bottom surface in a thickness direction of the hollow-out area, the clamping point comprises a semicircular sheet, the clamping point is supported by a quartz material, and a width of the clamping point is not more than 2 times a thickness of the silicon wafer.
4. The electrode assembly of a PECVD coater as recited in claim 1 wherein the mounting portion is disposed in the middle of the outside of one side of the square frame, and wherein the mounting portion has two mounting holes that are identical in size and shape and are symmetrically disposed about the center of the square frame.
5. The electrode assembly of PECVD coating machine as recited in claim 1, wherein said carrier plate lift assembly comprises a first lift driving motor mounted on a lift driving bracket capable of being erected on the upper portion of a vacuum furnace chamber, a first chamber welding flange is disposed at the mounting portion of said lift driving bracket and said vacuum furnace chamber, said first lift driving motor is connected to and drives a carrier plate lift driving rod, the top end of said carrier plate lift driving rod is connected to a first dynamic sealing flange, said carrier plate lift driving rod passes through the first chamber welding flange and extends into the vacuum furnace chamber, the lower end of said carrier plate lift driving rod is fixedly connected to the mounting portion of the uppermost hollow carrier plate, and simultaneously, two mounting rods capable of passing through the mounting holes of the mounting portions of all hollow carrier plates are fixedly connected to the lower end of said carrier plate lift driving rod, the bottom ends of the two mounting rods are fixedly connected to the mounting position of the hollow-out carrier plate at the lowermost layer.
6. The electrode assembly of a PECVD film coating machine as recited in claim 5, wherein the output end of the lifting driving motor is connected with a floating joint, the lower end of the floating joint is fixedly connected with a first movable sealing flange, the lower end of the first movable sealing flange is fixedly connected with a support plate lifting driving rod, and a welding corrugated pipe is arranged between the first movable sealing flange and the cavity sealing flange at the outer side of the support plate lifting driving rod and used for protecting the support plate lifting driving rod and guiding the moving track of the floating joint; the inner side of the lifting driving support is provided with a lifting linear guide rail, and the dynamic sealing flange can move along the lifting linear guide rail, so that the lifting linear direction is further stabilized.
7. The electrode assembly of PECVD coating machine as recited in claim 1, further comprising a support plate lifting module, wherein the support plate lifting module comprises a module lifting rod, a second lifting driving motor is disposed at the upper end of the module lifting rod, a lifting slide rail is disposed on the module lifting rod along the height direction of the module lifting rod, a lifting module fixture is mounted on the lifting slide rail, the lifting module fixtures are respectively disposed at two sides of the lifting slide rail, the lifting module fixtures can be respectively connected to the lifting driving support through a connecting block and can drive the lifting driving support to move up and down so as to move the support plate lifting assembly up and down, and the up and down movement of the support plate lifting assembly can drive the hollowed-out support plate set to move up and down out of the vacuum chamber or down into the vacuum chamber.
8. The electrode assembly of a PECVD coating machine as recited in claim 1, wherein a platen is disposed on the upper surface of the vacuum chamber, and a feeding port is disposed on the platen, the feeding port communicating with the interior of the vacuum chamber, the feeding port allowing the silicon wafer carrier to move up and down to enter or exit the interior of the chamber; the plasma structure is installed on a platen of a vacuum furnace chamber and comprises a plasma structure support and a plasma structure driving cylinder, a sliding structure of a plasma electrode post and the plasma electrode post is arranged on the plasma structure support, the plasma structure electrode post can penetrate through the platen and extend into the vacuum furnace chamber, and the plasma structure electrode post can slide along an electrode translation guide rail under the driving of the plasma structure driving cylinder and touch a plasma electrode in the vacuum furnace chamber.
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| CN202011264211.8A Active CN112680721B (en) | 2020-02-10 | 2020-02-10 | PECVD coating machine |
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| CN116856040A (en) * | 2023-09-01 | 2023-10-10 | 昆山科比精工设备有限公司 | Conductive jig for copper plating of silicon wafer |
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| CN112226746A (en) * | 2020-10-29 | 2021-01-15 | 常州捷佳创精密机械有限公司 | Silicon chip support plate, support plate electrode device and coating equipment |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN112575316A (en) | 2021-03-30 |
| CN112575316B (en) | 2023-04-11 |
| CN111254418B (en) | 2020-12-29 |
| CN112663028A (en) | 2021-04-16 |
| CN112680721B (en) | 2023-04-07 |
| CN111254418A (en) | 2020-06-09 |
| CN112663028B (en) | 2023-04-14 |
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