CN218812073U

CN218812073U - Deposition equipment

Info

Publication number: CN218812073U
Application number: CN202222946970.3U
Authority: CN
Inventors: 姚林松; 陈丽祥; 周宇洋
Original assignee: Weike Saile Microelectronics Co Ltd
Current assignee: Weike Saile Microelectronics Co Ltd
Priority date: 2022-11-07
Filing date: 2022-11-07
Publication date: 2023-04-07
Anticipated expiration: 2032-11-07

Abstract

The utility model relates to a semiconductor processing equipment field discloses a deposition equipment, including reaction chamber, install heating mechanism and elevating platform in reaction chamber, still install the tilting mechanism that is used for overturning the wafer in the reaction chamber, tilting mechanism includes upset frame, driving piece and holder, and the upset frame rotates to be installed in reaction chamber, and the driving piece is fixed outside the reaction chamber and be used for the drive upset frame to rotate, and the holder is fixed on the upset frame and be used for the centre gripping to place the wafer on the elevating platform. The utility model discloses make the positive and negative two sides that same board can deposit the wafer in succession, reduced the damage risk that conveys the wafer repeatedly and bring for the wafer, also can improve the deposition quality of wafer surface film simultaneously.

Description

Deposition equipment

Technical Field

The utility model relates to a semiconductor processing equipment technical field especially relates to a deposition equipment.

Background

Vapor deposition is a technique for forming functional or decorative metallic, non-metallic or compound coatings on the surface of a workpiece by using physical and chemical processes occurring in the vapor phase. The vapor deposition technique can be classified into physical vapor deposition, chemical vapor deposition, and plasma vapor deposition according to a film formation mechanism. In order to ensure the quality of the wafer during the processing of the wafer, a vapor deposition technique is usually used to deposit a dielectric thin film on the surface of the wafer to form a protective layer.

In the conventional vapor deposition apparatus, a reaction chamber which can be evacuated is usually provided, and a lift table for placing a wafer and a heating mechanism for heating gas are provided in the reaction chamber. When a medium film needs to be deposited on the surface of the wafer, the wafer is firstly placed on a carrying platform in a reaction chamber through a mechanical arm, then the reaction chamber is sealed and vacuumized, then a heating mechanism is opened, reaction gas is introduced, various reaction gases react, and finally the reaction gases are deposited on the surface of the wafer.

During actual processing, both the front and back sides of the wafer need to be deposited. However, due to the limitation of the vapor deposition equipment, the front deposition and the back deposition of most wafers require different machines to operate the process. Not only is the operation troublesome, but also the working efficiency is reduced; in addition, the wafer is repeatedly transferred, so that the deposition quality of the film on the surface of the wafer is easily reduced, and the wafer is even damaged or the film is caused to fall off, thereby seriously affecting the performance of the integrated device.

SUMMERY OF THE UTILITY MODEL

In view of the above, the present invention provides a deposition apparatus, which solves the problem of the prior art that the conventional vapor deposition apparatus cannot continuously process the front and back surfaces of the wafer.

The utility model discloses an above-mentioned technical problem is solved to following technical means:

the utility model provides a deposition equipment, includes reaction chamber, installs heating mechanism and the elevating platform in reaction chamber, still install the tilting mechanism that is used for overturning the wafer in the reaction chamber, tilting mechanism includes upset frame, driving piece and holder, the upset frame rotates and installs in reaction chamber, the driving piece is fixed outside reaction chamber and is used for driving the upset frame and rotates, the holder is fixed on the upset frame and is used for the centre gripping to place the wafer on the elevating platform.

Further, the elevating platform includes lift cylinder, mounting panel and many support columns, the bottom side in the reaction chamber is fixed to the lift cylinder, the output shaft one end at the lift cylinder is fixed to the mounting panel, many the support column is the annular array structure and fixes on the mounting panel, the edge position that the upper end of support column all was used for supporting the wafer.

Further, rotating shafts are fixed on two sides of the turnover frame and are rotatably installed in the reaction chamber; the driving piece is a motor, and an output shaft of the motor penetrates into the reaction chamber and is fixed with one of the rotating shafts.

Furthermore, the quantity of holder is two sets of, two sets of holder symmetry sets up in the elevating platform both sides, the holder is including driving actuating cylinder and anchor clamps head, it fixes on the upset frame to drive actuating cylinder, the output shaft one end at the cylinder is fixed to the anchor clamps head.

Further, an arc-shaped groove matched with the edge of the wafer is formed in one side, in contact with the wafer, of the clamp head.

Further, the heating mechanism comprises an installation disc and a resistance wire, the installation disc is detachably installed on the top side in the reaction chamber, and the resistance wire is fixed on the bottom side of the installation disc.

Further, the resistance wire is in a vortex-shaped structure.

Further, the heating mechanism also comprises a plurality of heating lamps which are uniformly arranged at the bottom side in the reaction chamber.

Further, still install annular trachea in the reaction chamber, annular trachea is located between resistance wire and the bracing piece, annular trachea and the indoor air inlet intercommunication of reaction chamber, a plurality of evenly distributed's venthole is seted up to one side at the annular trachea towards the reaction chamber center.

The utility model has the advantages that:

the utility model discloses a set up elevating platform, tilting mechanism isotructure in reaction chamber, after the deposit is accomplished in the front of wafer, can overturn the wafer through tilting mechanism to carry out the deposit to the reverse side of wafer. Through the arrangement, the front side and the back side of the wafer can be continuously processed by the same machine, the damage risk caused by repeatedly transmitting the wafer is reduced, and meanwhile, the deposition quality of the film on the surface of the wafer can be improved.

Drawings

FIG. 1 is a cross-sectional view of a deposition apparatus of the present invention;

FIG. 2 is an enlarged schematic view of the present invention at A in FIG. 1;

FIG. 3 is a cross-sectional view of a deposition apparatus of the present invention;

wherein, 1, a reaction chamber; 2. a lifting platform; 21. a lifting cylinder; 22. mounting a plate; 23. a support column; 3. turning over the frame; 31. a rotating shaft; 32. a mounting frame; 4. a clamping member; 41. a driving cylinder; 42. a clamp head; 421. an arc-shaped slot; 5. a drive member; 6. mounting a disc; 7. a resistance wire; 8. a heating lamp; 9. an annular air pipe; 91. an air outlet; 10. and (5) a wafer.

Detailed Description

The following description is given by way of specific embodiments, and those skilled in the art will appreciate the advantages and effects of the present invention from the disclosure provided in the present specification. It should be noted that the drawings provided in the following embodiments are only for illustrative purposes, and are only schematic drawings rather than actual drawings, which should not be construed as limiting the invention, and in order to better illustrate the embodiments of the invention, some components in the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and their descriptions may be omitted.

In the description of the present invention, it should be understood that, if there are the terms "upper", "lower", "left", "right", "front", "back", etc. indicating the directions or positional relationships based on the directions or positional relationships shown in the drawings, it is only for convenience of description and simplification of description, but not for indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, therefore, the terms describing the positional relationships in the drawings are only used for exemplary illustration and should not be construed as limitations of the present invention, and those skilled in the art can understand the specific meanings of the terms according to the specific situations.

As shown in fig. 1-3, the deposition apparatus of the present invention comprises a reaction chamber 1, a heating mechanism and a lifting platform 2 installed in the reaction chamber 1, wherein the heating mechanism is used for raising the temperature of the reaction gas, and the lifting platform 2 is used for bearing a wafer 10 and driving the wafer 10 to lift. A turnover mechanism is further installed in the reaction chamber 1, and the turnover mechanism can turn over the wafer 10. The turnover mechanism comprises a turnover frame 3, a driving piece 5 and a clamping piece 4, wherein the turnover frame 3 is rotatably installed in the reaction chamber 1, and the turnover frame 3 can be turned over by 360 degrees in the reaction chamber 1. The driving member 5 is fixed outside the reaction chamber 1 and used for driving the turnover frame 3 to rotate. The clamp 4 is fixed to the reversing frame 3 and clamps the wafer 10 placed on the lift table 2.

After the front of wafer 10 finishes depositing the dielectric film, can be fixed with wafer 10 centre gripping through holder 4, then control elevating platform 2 and wafer 10 break away from, rethread driving piece 5 drive upset frame 3 upset 180 to this drives wafer 10 upset 180 through holder 4, make the reverse side of wafer 10 towards the upside, then control elevating platform 2 and rise, make wafer 10 place on elevating platform 2 again, control holder 4 and wafer 10 break away from at last, carry out vapor deposition to the reverse side of wafer 10. Through the arrangement, the front surface and the back surface of the wafer 10 can be continuously processed by the same machine, the damage risk brought to the wafer 10 by repeatedly transmitting the wafer 10 is reduced, and meanwhile, the deposition quality of the surface film of the wafer 10 can be improved.

In this embodiment, the lifting platform 2 includes a lifting cylinder 21, a mounting plate 22 and four supporting columns 23, the lifting cylinder 21 is fixed on the bottom side in the reaction chamber 1, the output shaft of the lifting cylinder 21 faces the upper side, the mounting plate 22 is fixed at one end of the output shaft of the lifting cylinder 21, the lower ends of the supporting columns 23 are fixed on the upper side of the mounting plate 22, and the four supporting columns 23 are distributed in an annular array structure. When the wafer 10 is placed, an external robot arm may be operated to cooperate with a suction pen or a fixture to transfer the wafer 10 onto the four supporting pillars 23, and upper ends of the four supporting pillars 23 contact with an edge portion of the wafer 10, where the specific range of the edge portion is 8-10mm from the outer side of the wafer 10 to the center of the circle. It should be noted that after the wafer 10 is processed, the 10-25mm edge of the wafer itself needs to be removed, so that the contact between the supporting posts 23 and the edge portion of the wafer 10 does not affect the deposition process. Before the wafer 10 is turned, the mounting plate 22 and the four support pillars 23 are driven to descend by the lifting cylinder 21, so that the mounting plate 22 and the support pillars 23 cannot obstruct the turning frame 3 from turning normally.

In this embodiment, the rotating shafts 31 are fixed on both sides of the turnover frame 3, and the rotating shafts 31 on both sides are rotatably mounted on the inner side wall of the reaction chamber 1 through bearings. The driving member 5 is a motor, and an output shaft of the motor penetrates into the reaction chamber 1 and is fixed with one of the rotating shafts 31. The purpose of overturning the wafer 10 can be achieved by driving the overturning frame 3 to overturn through the motor.

In this embodiment, the quantity of holder 4 is two sets of, and two sets of holders 4 symmetry sets up in elevating platform 2 both sides, and holder 4 is including driving actuating cylinder 41 and anchor clamps head 42, and the both sides of upset frame 3 all are fixed with mounting bracket 32, and driving actuating cylinder 41 passes through mounting bracket 32 to be fixed on upset frame 3, and the output shaft of driving actuating cylinder 41 is towards wafer 10, and anchor clamps head 42 is fixed in the output shaft one end of cylinder. When the wafer 10 needs to be clamped, the driving air cylinders 41 on both sides are controlled to move the clamp heads 42 on both sides toward the wafer 10, and after the clamp heads 42 clamp the wafer 10, the driving air cylinders 41 are stopped to clamp and fix the wafer 10. It should be noted that the position of the support rod is not set on the motion track of the chuck head 42, so that the support rod does not hinder the clamping action of the chuck head 42 on the wafer 10.

In this embodiment, an arc-shaped groove 421 adapted to the edge of the wafer 10 is formed on a side of the chuck head 42 contacting the wafer 10, and when the chuck head 42 moves toward the wafer 10, the edge of the wafer 10 can enter the arc-shaped groove 421. With this arrangement, the wafer 10 is prevented from being detached from the clamp 4 when the wafer 10 is reversed.

In the present embodiment, the heating mechanism includes a mounting plate 6 and a resistance wire 7, the mounting plate 6 is detachably mounted on the top side in the reaction chamber 1 by bolts, and the resistance wire 7 is fixed on the bottom side of the mounting plate 6. By so doing. The mounting plate 6 and the resistance wire 7 are convenient to replace, so that different reaction gases are suitable.

In the present embodiment, the resistance wire 7 has a spiral-like structure. Through the arrangement, the reaction gas introduced into the reaction chamber 1 is heated more uniformly, and the deposition quality of the film on the surface of the wafer 10 is improved.

In this embodiment, the heating mechanism further includes four heating lamps 8, and the four heating lamps 8 are uniformly disposed at the bottom side in the reaction chamber 1. The heating lamp 8 and the resistance wire 7 are matched with each other, so that the heating uniformity of the reaction gas is further improved, and the deposition quality of the film on the surface of the wafer 10 is improved.

In this embodiment, an annular gas pipe 9 is further installed in the reaction chamber 1, the annular gas pipe 9 is fixed between the resistance wire 7 and the support column 23, the annular gas pipe 9 is communicated with the gas inlet in the reaction chamber 1, that is, the reaction gas introduced into the reaction chamber 1 flows into the annular gas pipe 9 first. A plurality of air outlets 91 are formed in one side, facing the center of the reaction chamber 1, of the annular air pipe 9, the aperture of each air outlet 91 is 0.3-0.9mm, and the air outlets 91 are uniformly distributed on the annular air pipe 9. By this arrangement, the reaction gas can be more uniformly introduced into the reaction chamber 1.

Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art will understand that the present invention can be modified or replaced with other embodiments without departing from the spirit and scope of the present invention, which should be construed as limited only by the appended claims. The technology, shape and construction parts which are not described in detail in the present invention are all known technology.

Claims

1. The utility model provides a deposition equipment, includes reaction chamber, installs heating mechanism and elevating platform in reaction chamber, its characterized in that: still install the tilting mechanism that is used for upset wafer in the reaction chamber, tilting mechanism includes upset frame, driving piece and holder, the upset frame rotates and installs in the reaction chamber, the driving piece is fixed outside the reaction chamber and is used for driving the upset frame and rotates, the holder is fixed on the upset frame and is used for the centre gripping to place the wafer on the elevating platform.

2. A deposition apparatus according to claim 1, wherein: the elevating platform includes lift cylinder, mounting panel and many support columns, the bottom side in the reaction chamber is fixed to the lift cylinder, the output shaft one end at the lift cylinder is fixed to the mounting panel, many the support column is the annular array structure and fixes on the mounting panel, the edge position that the upper end of support column all is used for supporting the wafer.

3. A deposition apparatus according to claim 2, wherein: rotating shafts are fixed on two sides of the turnover frame and are rotatably arranged in the reaction chamber; the driving piece is a motor, and an output shaft of the motor penetrates into the reaction chamber and is fixed with one of the rotating shafts.

4. A deposition apparatus according to claim 3, wherein: the quantity of holder is two sets of, and is two sets of the holder symmetry sets up in the elevating platform both sides, the holder is including driving actuating cylinder and anchor clamps head, it fixes on the upset frame to drive actuating cylinder, the output shaft one end at the cylinder is fixed to the anchor clamps head.

5. A deposition apparatus according to claim 4, wherein: and an arc-shaped groove matched with the edge of the wafer is formed in one side of the clamp head, which is contacted with the wafer.

6. A deposition apparatus according to any one of claims 1 to 5, wherein: the heating mechanism comprises an installation disc and a resistance wire, the installation disc is detachably installed on the top side in the reaction chamber, and the resistance wire is fixed on the bottom side of the installation disc.

7. A deposition apparatus according to claim 6, wherein: the resistance wire is in a vortex-shaped structure.

8. A deposition apparatus according to claim 7, wherein: the heating mechanism also comprises a plurality of heating lamps which are uniformly arranged at the bottom side in the reaction chamber.

9. A deposition apparatus according to claim 7 or 8, wherein: the reaction chamber is internally provided with an annular air pipe, the annular air pipe is positioned between the resistance wire and the support column, the annular air pipe is communicated with an air inlet in the reaction chamber, and one side of the annular air pipe, which faces the center of the reaction chamber, is provided with a plurality of uniformly distributed air outlet holes.