Pecvd silicon nitride film coating machine for perc battery processing
Technical Field
The utility model relates to the technical field of perc battery processing, in particular to a pecvd silicon nitride film coating machine for perc battery processing.
Background
In order to improve the photoelectric conversion efficiency and the service life of a photovoltaic crystal silicon cell and improve the light absorption rate of the photovoltaic cell, a Plasma Enhanced Chemical Vapor Deposition (PECVD) method is mainly adopted for preparing an antireflection film on the surface of the photovoltaic crystal silicon cell, and meanwhile, the Plasma Enhanced Chemical Vapor Deposition (PECVD) method plays roles of body passivation and surface passivation and reduces the attenuation speed of a photovoltaic cell assembly, the PECVD method is the most mature technology and simpler to operate among a plurality of methods for preparing a film material, and is used for continuous automatic production, and a film coating mode at the present stage sometimes needs to manually place a silicon wafer inside equipment for film coating, so that the film coating efficiency is influenced and the burden of workers is increased.
Therefore, compared with the prior art, the utility model can quickly place the silicon wafer in equipment for film coating, has high film coating efficiency and reduces the burden of workers.
SUMMERY OF THE UTILITY MODEL
The utility model aims to overcome the defects of the prior art and provides a pecvd silicon nitride film coating machine for perc battery processing.
The utility model is realized by the following technical scheme: the pecvd silicon nitride film coating machine for processing the perc battery structurally comprises a film coating system, wherein the film coating system comprises a container with a reaction cavity, a film coating assembly arranged in the reaction cavity, at least one first notch formed in the surface of the container and an observation window which is arranged corresponding to the first notch and can be opened and closed; the silicon wafer placing frame comprises a frame body and a frame body, wherein the frame body comprises a cylinder body and at least one bulge arranged on the surface of the cylinder body and arranged along the side edge of the cylinder body, the bulge is provided with a plurality of notches, a silicon wafer is placed at the position of the bulge, and the silicon wafer is arranged corresponding to the notches; the track system comprises a first track and a second track which are arranged on two sides of the first opening, the first track is arranged outside the reaction cavity, and the second track is arranged inside the reaction cavity; the carrier is arranged to move back and forth between the frame body and the outer space of the reaction cavity along a track system, and comprises a moving part, a lifting assembly arranged on the moving part and a plate body connected with the lifting assembly; the lifting assembly drives the plate body to move, the plate body and the protrusions are the same in number, and when the plate body moves to the position of the frame body, the plate body and the grooves are aligned.
For the film laminating machine, a silicon wafer to be laminated is placed on a plate body of a carrier, the carrier moves along a first track, when the carrier moves to the position of an observation window, the observation window is automatically opened, the carrier moves continuously to the position of a second track through the observation window, the carrier moves continuously to the position of a frame body along the second track, the plate body is aligned with a notch at the moment, a lifting component descends, the silicon wafer on the plate body is placed on a bulge, the observation window is closed, a reaction cavity is in a vacuum state through vacuum pumping equipment, thin gas heated through pulse radio frequency excitation is subjected to glow discharge to form plasma, the plasma accelerates to impact gas between polar plates through opposite alternating voltages of two corresponding graphite sheets, the plasma moves to the surface of the silicon wafer to complete film coating, the carrier moves to the position of the frame body, the lifting component rises, the silicon wafer is taken out of the bulge through the plate body, compared with the prior art, the silicon wafer laminating device has the advantages that the silicon wafer after being laminated is moved to the outside of the reaction cavity through the track system, the laminating efficiency is high, and the burden of workers is reduced by quickly placing the silicon wafer in the device for laminating.
Preferably, in order to carry out the tectorial membrane to more silicon chips simultaneously, the container is cylindric design, and five first openings have been seted up to container lateral wall circumference equidistant, and five slots have been seted up to cylinder lateral wall circumference equidistant, and slot position department all is provided with the observation window, and the support body still includes actuating system, and actuating system drives the cylinder rotatory, conveniently places the silicon chip through the carrier at the slot of different angles.
Preferably, the observation window is used for sealing the first opening, and a driving assembly is arranged for automatically opening and closing or opening the observation window.
Preferably, for the convenience of understanding, the utility model also discloses a concrete structure of the moving part and the lifting assembly, wherein the moving part comprises a shell, a wheel body for driving the shell to move, a power driving system for driving the wheel body to move, and the lifting assembly comprises a first plate body, a second plate body vertically connected with the first plate body in a sliding manner, and a telescopic device for driving the second plate body to move along the first plate body.
The utility model discloses a pecvd silicon nitride film coating machine for perc battery processing, which is compared with the prior art:
the silicon wafer laminating device is provided with the track system and the carrier, the track system is arranged outside and inside the laminating system, a silicon wafer can be quickly placed in the device for laminating through the carrier, the laminating efficiency is high, and the burden of workers is reduced;
the container is designed in a cylindrical shape, five first notches are formed in the side wall of the container at equal intervals in the circumferential direction, five notches are formed in the side wall of the cylinder at equal intervals in the circumferential direction, and observation windows are arranged at the positions of the notches, so that workers can observe the silicon wafers from different angles conveniently;
thirdly, the frame body further comprises a driving system, the driving system drives the frame body to rotate, and further the angle of the silicon wafer is changed along with the rotation of the frame body, so that the silicon wafers can be conveniently placed at the positions of the notches at different angles through the carriers, and a cylinder can be used for placing a larger number of silicon wafers.
Drawings
FIG. 1 is a schematic structural view of a laminator according to the present invention;
FIG. 2 is a schematic structural view of a frame body according to the present invention;
FIG. 3 is a schematic structural view of a carrier according to the present invention;
fig. 4 is a schematic view of the structure of the projection of the present invention.
Detailed Description
The following examples are given for the detailed implementation and specific operation of the present invention, but the scope of the present invention is not limited to the following examples.
As shown in fig. 1 to 4, the utility model discloses a pecvd silicon nitride film coating machine for perc battery processing, which structurally comprises a film coating system 1, wherein the film coating system 1 comprises a container 11 with a reaction cavity, a film coating assembly arranged in the reaction cavity, at least one first notch arranged on the surface of the container 11 and an observation window 12 which is arranged corresponding to the first notch and can be opened and closed; the silicon wafer placing frame comprises a frame body 2, wherein the frame body 2 comprises a cylinder 22 and at least one bulge 23 arranged on the surface of the cylinder 22 and arranged along the side edge of the cylinder 22, the bulge 23 is provided with a plurality of notches, a silicon wafer is placed at the position of the bulge 23, and the silicon wafer is arranged corresponding to the notches; the track system 3, the track system 3 includes the first orbit 31 and the second orbit 32 that are arranged on both sides of the first gap, the first orbit 31 sets up outside the reaction chamber, the second orbit 32 sets up inside the reaction chamber; a carrier 4 arranged to move along the trajectory system 3 to and from between the frame body 2 and the space outside the reaction chamber, the carrier 4 including a moving part, a lifting assembly 43 provided on the moving part, and a plate body 44 connected to the lifting assembly 43; the lifting assembly 43 drives the plate body 44 to move, the number of the plate body 44 is the same as that of the protrusions 23, and when the plate body 44 moves to the position of the rack body 2, the plate body 44 is aligned with the notch.
Based on the structure, for the film coating machine of the utility model, firstly, a silicon wafer to be coated is placed on a plate body 44 of a carrier 4, the carrier 4 firstly moves along a first rail 31, when the carrier moves to the position of an observation window 12, the observation window 12 is automatically opened, the carrier 4 continuously moves, passes through the observation window 12, moves to the position of a second rail 32, continuously moves to the position of a frame body 2 along the second rail 32, at the moment, the plate body 44 is aligned with a notch groove, a lifting component 43 descends, the silicon wafer on the plate body 33 is placed on a bulge 23, the observation window is closed, a reaction cavity is in a vacuum state through a vacuumizing 1 device, heated thin gas is excited by pulse radio frequency to glow discharge to form plasma, the plasma accelerates to impact gas between polar plates by applying opposite alternating voltages to two corresponding graphite sheets, the plasma moves to the surface of the silicon wafer to complete film coating, and then the carrier 4 moves to the position of the frame body 2, the lifting assembly 43 is lifted, the silicon wafer is taken out of the protrusion 23 through the plate body 33, and then the silicon wafer after film coating is moved to the outside of the reaction cavity through the track system 3.
Further, in order to carry out the tectorial membrane to more silicon chips simultaneously, container 11 is cylindric design, and 11 lateral walls circumference equidistant five first openings have been seted up, and 22 lateral walls circumference equidistant five slots have been seted up, and the slot position department all is provided with the observation window, and support body 2 still includes actuating system 21, and actuating system 21 drives the cylinder 22 rotatory, conveniently places the silicon chip through carrier 4 at the slot of different angles.
Further, the observation window 12 is used for sealing the first opening, and a driving component is arranged for automatically opening and closing or opening the observation window 12.
Furthermore, for the convenience of understanding, the utility model also discloses a concrete structure of a moving part and a lifting assembly 43, wherein the moving part comprises a shell 41, a wheel body 42 for driving the shell 41 to move, and a power driving system for driving the wheel body 42 to move, and the lifting assembly 43 comprise a first plate body, a second plate body vertically connected with the first plate body in a sliding manner, and a telescopic device for driving the second plate body to move along the first plate body.
Compared with the prior art, the silicon wafer laminating device has the advantages that the silicon wafer can be quickly placed in the device for laminating, the laminating efficiency is high, and the burden of workers is reduced.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and equivalent alternatives or modifications according to the technical solution of the present invention and the inventive concept thereof should be covered by the scope of the present invention.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.