CN112575316B

CN112575316B - PECVD coating machine

Info

Publication number: CN112575316B
Application number: CN202011261961.XA
Authority: CN
Inventors: 林佳继; 刘群; 张武; 朱太荣; 庞爱锁; 林依婷
Original assignee: Laplace New Energy Technology Co ltd
Current assignee: Laplace New Energy Technology Co ltd
Priority date: 2020-02-10
Filing date: 2020-02-10
Publication date: 2023-04-11
Anticipated expiration: 2040-02-10
Also published as: CN112680721A; CN111254418B; CN112663028B; CN111254418A; CN112575316A; CN112663028A; CN112680721B

Abstract

The invention provides a PECVD (plasma enhanced chemical vapor deposition) film coating machine which comprises a vacuum furnace chamber for film coating operation, wherein at least two stations related to silicon wafers are arranged in the vacuum furnace chamber, the firing stations of the silicon wafers are also loading stations of the silicon wafers, the silicon wafers are loaded into a hollowed-out support plate through a translation mechanism, the hollowed-out support plate comprises a plurality of hollowed-out support plates, the hollowed-out support plates are vertically arranged at the loading stations of the silicon wafers and are uniformly distributed at equal intervals to form a silicon wafer carrier, at least one hollowed-out part and one installation part are arranged on a single hollowed-out support plate, the hollowed-out part is positioned in the middle of the hollowed-out support plate, the installation part is positioned on one side of the hollowed-out support plate, and the installation parts of the hollowed-out support plates are positioned on the same side of the hollowed-out support plate. According to the invention, a vertical wafer feeding mode and a horizontal wafer inserting mode are adopted, the alternating opposite insertion of the silicon wafer and the electrode wafer is completed in the vacuum furnace cavity, and for the film coating process, the atmosphere control can be carried out from the wafer inserting process to the film coating process, so that the film coating environment can be adjusted, and the film coating quality can be improved.

Description

PECVD coating machine

Technical Field

The invention relates to a film coating machine, in particular to passive film coating equipment for the surface of a solar cell.

Background

The plasma enhanced chemical vapor deposition system ionizes gas containing film constituent atoms by means of microwave or radio frequency and the like to form a plasma structure locally, and the plasma structure has strong chemical activity and is easy to react, so that a desired film is deposited on a substrate. In order to allow chemical reactions to proceed at lower temperatures, the reactivity of the plasma structure is exploited to promote the reactions, and thus such CVD is known as plasma structure enhanced chemical vapor deposition (PECVD).

In the solar photovoltaic industry, PECVD is often employed to prepare antireflective films such as silicon nitride films, silicon carbide films, silicon oxide films, and the like; the traditional PECVD coating film is usually a single-sided coating film, the requirement on the single-sided performance of the film is high, the traditional production equipment is easy to cause winding coating, and the problem of sticking and spot printing cannot be avoided. Meanwhile, the problems of silicon chip deformation, high fragment rate and the like in the production process are easily caused to the ultrathin silicon chip.

Disclosure of Invention

The invention aims to provide a PECVD film coating machine, which can overcome the problems in the background technology.

The technical scheme adopted by the invention for solving the technical problem is as follows:

a PECVD film plating machine comprises a vacuum furnace chamber used for film plating operation, wherein at least two stations related to a silicon wafer are arranged in the vacuum furnace chamber, one station is a preloading station of the silicon wafer, the other station is a firing station of the silicon wafer, the firing station of the silicon wafer is also a loading station of the silicon wafer, the silicon wafer is loaded into a hollowed-out support plate through a translation mechanism on the loading station of the silicon wafer, the hollowed-out support plate comprises a plurality of hollowed-out support plates, the hollowed-out support plates are vertically arranged on the loading station of the silicon wafer and are uniformly distributed at equal intervals to form a silicon wafer carrier, at least one hollowed-out part and one installation part are arranged on a single hollowed-out support plate, the hollowed-out part is positioned in the middle of the hollowed-out support plate, the installation part is positioned on one side of the hollowed-out support plate, and the installation parts of the hollowed-out support plates are positioned on the same side of the hollowed-out support plate;

the mounting part is fixed on a support plate lifting assembly, the support plate lifting assembly is mounted on one side of a vacuum furnace chamber, an electrode pushing mechanism is arranged at the bottom of the vacuum furnace chamber, a preloading device of an electrode plate is arranged on the electrode pushing mechanism, preloading parts of a silicon wafer are equidistantly arranged on the preloading device, the preloading parts comprise vertically arranged plasma electrodes, preloading stations of the electrode plate are equidistantly arranged along the height direction of the plasma electrodes, the preloading stations of the electrode plate comprise clamping grooves capable of transversely mounting the silicon wafer, and the distance between the clamping grooves is the same as that between the hollowed-out support plates; the upper end of the plasma electrode is connected to the plasma structure through a plasma electrode post; and a vacuumizing interface is arranged at the bottom of the vacuum furnace chamber.

Further, the fretwork support plate includes square frame and the cross support of setting in square frame, the cross support will the space that square frame encloses separates into four equidistant square fretwork regions, and square frame and cross support all adopt quartz material to make, and square frame and cross support's width is no longer than 1/10 of single fretwork region width to guarantee to reserve sufficient surface area for the burning of silicon chip, square frame and cross support's thickness is not less than silicon chip thickness.

Furthermore, each hollowed-out area is internally provided with a clamping point, the clamping point is arranged in the middle of the edge of each hollowed-out area and is arranged close to the lower bottom surface in the thickness direction of the hollowed-out empty plate, each clamping point comprises a semicircular sheet, the clamping points are also supported by a quartz material, and the width of each clamping point is not more than 2 times of the thickness of the silicon wafer.

Furthermore, the mounting part is arranged in the middle of the outer side of one side of the square frame, two mounting holes are formed in the mounting part, the size and the shape of the two mounting holes are consistent, and the two mounting holes are symmetrically arranged along the center of the square frame.

Further, support plate lifting unit includes a lift driving motor, a lift driving motor installs on lift driving support, lift driving support can assume on the upper portion of vacuum furnace chamber lift driving support with vacuum furnace chamber's installation position is equipped with first cavity welding flange, a lift driving motor connects and drives support plate lift actuating lever, support plate lift actuating lever's the top is connected on first dynamic seal flange, support plate lift actuating lever passes first cavity welding flange and stretches into the vacuum furnace intracavity, support plate lift actuating lever's lower extreme fixed connection is on the installation position of the fretwork support plate of the superiors, and simultaneously, support plate lift actuating lever's lower extreme fixedly connected with can pass the installation pole of the mounting hole on the installation position of all support plates fretwork, and the bottom fixed connection of two installation poles is on the installation position of the fretwork support plate of lower floor.

Furthermore, the output end of the lifting driving motor is connected with a floating joint, the lower end of the floating joint is fixedly connected with a first dynamic sealing flange, the lower end of the first dynamic sealing flange is fixedly connected with a support plate lifting driving rod, and a welding corrugated pipe is arranged between the first dynamic sealing flange and the cavity sealing flange on the outer side of the support plate lifting driving rod and used for protecting the support plate lifting driving rod and guiding the moving track of the floating joint; the inner side of the lifting driving support is provided with a lifting linear guide rail, and the dynamic sealing flange can move along the lifting linear guide rail, so that the lifting linear direction is further stabilized.

Further, the coating machine still includes support plate lift module, support plate lift module includes the module lifter, and the upper end of module lifter is equipped with second lift driving motor, be equipped with the lift slide rail on the module lifter along its direction of height, install lift module anchor clamps on the lift slide rail, lift module anchor clamps are located the both sides of lift slide rail respectively, lift module anchor clamps can be connected to the lift drive support through the connecting block (not shown, can adopt conventional steelwork) respectively to can drive the lift drive support and reciprocate thereby make support plate lifting unit reciprocates, reciprocating of support plate lifting unit can drive fretwork support plate group upwards leave the vacuum or the furnace chamber gets into the vacuum furnace chamber downwards.

Further, one side of the bottom of the vacuum furnace chamber is provided with a transverse pushing hole, the electrode pushing mechanism can push a plasma electrode inwards through the transverse pushing hole, the outer side of the transverse pushing hole is sealed through a second cavity welding flange, the outer end of the second cavity welding flange is in butt joint with a second movable sealing flange, the outer end of the second movable sealing flange is in butt joint with a cylinder mounting flange, the electrode pushing mechanism further comprises an electrode pushing cylinder, the electrode pushing cylinder is mounted on the cylinder mounting flange, the output end of the electrode pushing cylinder penetrates through the cylinder mounting flange and is connected to a cylinder connecting shaft, the cylinder connecting shaft penetrates through the second movable sealing flange and extends into the second cavity welding flange, and is connected with an electrode pushing rod inside the second cavity welding flange, one side of the lower end of the plasma electrode is provided with a boosting plate, the lower surface of the plasma electrode is provided with a transverse sliding block, the bottom of the vacuum furnace chamber is provided with an electrode translation guide rail, the transverse sliding block is matched with the electrode translation guide rail, and the electrode pushing rod can push the boosting plate and push the plasma electrode to move inwards along the electrode translation guide rail.

Further, the plasma electrode comprises a plasma electrode positive electrode block and a plasma electrode negative electrode block, the plasma electrode positive electrode block and the plasma electrode negative electrode block are installed and fixed on the bottom plate, a certain distance is reserved between the plasma electrode positive electrode block and the plasma electrode negative electrode block, a plurality of steps are arranged on one side of the plasma electrode negative electrode block facing the inside of the vacuum furnace body at equal intervals respectively, a clamping groove capable of transversely installing a silicon wafer is formed between every two adjacent steps, each step at least comprises a first boss and a second boss from bottom to top, the second boss protrudes out of the first boss, a slope is arranged at a step corner of the second boss, the height of the first boss on the plasma electrode positive electrode block is smaller than that of the first boss on the plasma electrode negative electrode block, the height of the second boss on the plasma electrode positive electrode block is larger than that of the second boss on the plasma electrode negative electrode block, so that the same silicon wafer can be clamped by two electrode blocks simultaneously, and the upper surface and the lower surface of the same are respectively touched by the plasma electrode positive electrode block and the plasma electrode negative electrode block.

Further, a platen is arranged on the upper surface of the vacuum furnace chamber, a feeding port is formed in the platen and communicated with the inside of the vacuum furnace chamber, and the feeding port can allow the silicon wafer carrier to move up and down so as to enter or exit the inside of the furnace chamber; the plasma structure is installed on a platen of a vacuum furnace chamber and comprises a plasma structure support and a plasma structure driving cylinder, a sliding mechanism of a plasma electrode post and the plasma electrode post is arranged on the plasma structure support, the plasma structure electrode post can penetrate through the platen and extend into the vacuum furnace chamber, and the plasma structure electrode post can slide along the sliding mechanism under the driving of the plasma structure driving cylinder and touch the plasma electrode in the vacuum furnace chamber.

The invention has the beneficial effects that:

(1) According to the invention, a vertical wafer feeding mode and a horizontal wafer inserting mode are adopted, the alternating opposite insertion of the silicon wafer and the electrode wafer is completed in the vacuum furnace cavity, and for the film coating process, the atmosphere control can be carried out from the wafer inserting process to the film coating process, so that the film coating environment can be adjusted, and the film coating quality can be improved.

(2) The invention designs the hollow carrier for loading the silicon wafer, so that the upper surface and the lower surface of the silicon wafer can be exposed for coating production, the coating yield is improved by times, and meanwhile, the problem of plating by winding can be effectively avoided by horizontal coating.

(3) The electrode column is provided with the clamping grooves in a staggered mode, so that the electrode plate can be conducted while the electrode column is clamped, meanwhile, the electrode plate is fixed through the two points, and the horizontal stability of the electrode plate can be facilitated.

Drawings

Fig. 1 is an overall structural view of the present invention.

FIG. 2 is a schematic view of the silicon wafer carrier of the present invention being loaded into a vacuum chamber.

Fig. 3 is a side view of fig. 2.

Fig. 4 is a schematic view of a hollow carrier.

Fig. 5 is a schematic view of a carrier plate lifting mechanism of the present invention.

Fig. 6 is a schematic view of an electrode pushing mechanism of the present invention.

Reference numbers in the figures: a vacuum furnace chamber 100, a preloading station 101, a firing station 102, a loading station 103, a hollowed-out carrier plate 104, a hollowed-out part 105, an installation part 106, a square frame 107, a cross-shaped support 108, a hollowed-out region 109, a clamping point 110, an installation hole 111, a vacuumizing interface 112, a transverse pushing opening 113, an electrode translation guide rail 114, a silicon wafer 200, a plasma electrode 300, an electrode sheet 301, a plasma electrode positive electrode block 302, a plasma electrode negative electrode block 303, a bottom plate 304, a step 305, a first boss 3051, a second boss 3052, a salient point 3053, a slope 3054, an electrode sheet loading station 306, a boosting plate 307, a transverse sliding block 308, a carrier plate lifting assembly 400, a first lifting driving motor 401, a lifting driving support 402, a first cavity welding flange 403, a carrier plate lifting driving rod 404 and a first dynamic sealing flange 405, the device comprises a mounting rod 406, a floating joint 407, a welding corrugated pipe 408, a lifting linear guide rail 409, a sealing ring 410, an output end 411 of a first lifting driving motor, a bedplate 500, a feeding port 501, a support plate lifting module 600, a module lifting rod 601, a second lifting driving motor 602, a lifting slide rail 603, a furnace door 700, an electrode pushing mechanism 800, a second cavity welding flange 801, a second movable sealing flange 802, a cylinder mounting flange 803, an electrode pushing cylinder 804, an output end 805 of the electrode pushing cylinder, a cylinder connecting shaft 806, an electrode pushing rod 807, a movable sealing flange end cover 808, a dynamic sealing ring 809, a dynamic sealing ring press ring 810, a plasma structure 900, a plasma structure support 901, a plasma structure driving cylinder 902, a plasma electrode column 903 and a plasma structure translation guide rail 904.

Detailed Description

The following detailed description of the embodiments of the present invention is provided in conjunction with the accompanying drawings, and it should be noted that the embodiments are merely detailed descriptions of the present invention for the purpose of better understanding and implementing the present invention by those skilled in the art, and should not be construed as limiting the present invention.

As shown in fig. 1-3, the present invention provides a PECVD coater, which comprises a vacuum furnace chamber 100 for coating operation, wherein at least two stations related to a silicon wafer are arranged in the vacuum furnace chamber 100, one of the stations is a silicon wafer preloading station 101, the other is a silicon wafer firing station 102, a silicon wafer loading station 103 is arranged above the silicon wafer firing station 102, on the silicon wafer loading station 103, a silicon wafer 200 is loaded into a hollow carrier plate 104 through a silicon wafer translation mechanism in the prior art, the hollow carrier plate 104 comprises a plurality of hollow carrier plates 104, the plurality of hollow carrier plates 104 are arranged above and below the silicon wafer loading station 103 and are uniformly distributed at equal intervals to form a silicon wafer carrier, a single hollow carrier plate 104 is at least provided with a hollow part 105 and an installation part 106, the hollow part 105 is located in the middle of the hollow carrier plate 104, the installation part 106 is located on one side of the hollow carrier plate 104, and the installation parts of the plurality of hollow carrier plates 104 are located on the same side of the hollow carrier plate.

As shown in fig. 4, the hollow carrier plate 104 includes a square frame 107 and a cross-shaped support 108 disposed in the square frame 107, the cross-shaped support 108 will space enclosed by the square frame 107 is divided into four equidistant square hollow areas, the square frame 107 and the cross-shaped support 108 are both made of quartz material, the widths of the square frame 107 and the cross-shaped support 108 are not more than 1/10 of the width of a single hollow area 109 (after separation), so as to ensure that a sufficient surface area is left for firing the silicon wafer, and the thicknesses of the square frame and the cross-shaped support are not less than the thickness of the silicon wafer.

Each hollow-out area 109 is internally provided with a clamping point 110, the clamping point 110 is arranged in the middle of the edge of each hollow-out area 109 and is arranged close to the lower bottom surface in the thickness direction of the hollow-out carrier plate 104, the clamping point 110 comprises a semicircular sheet, the clamping point 110 is also supported by a quartz material, the width of the clamping point 110 is not more than 2 times of the thickness of a silicon wafer, when the hollow-out carrier plate 104 is loaded with the silicon wafer, the silicon wafer can be placed into each hollow-out area 109 and is blocked by the clamping point 110, and the hollow-out carrier plate 104 loaded with the silicon wafer thickness is as shown in fig. 1.

The mounting portion 106 is disposed in the middle of the outer side of one side of the square frame 107, two mounting holes 111 are disposed on the mounting portion 106, and the two mounting holes 111 are identical in size and shape and are symmetrically disposed along the center of the square frame 107.

The mounting position 106 is fixed on the support plate lifting assembly 400, the support plate lifting assembly 400 is installed one side of the vacuum furnace chamber 100, as shown in fig. 5, the support plate lifting assembly 400 includes a first lifting driving motor 401, the first lifting driving motor 401 is installed on a lifting driving support 402, the lifting driving support 402 can be erected on the upper portion of the vacuum furnace chamber 100, the bottom end of the lifting driving support 402 is fixedly connected to the upper surface of the furnace door 700, the lifting driving support 402 is provided with a first cavity welding flange 403 at the mounting position of the vacuum furnace chamber 100, the first lifting driving motor 403 is connected to and drives the support plate lifting driving rod 404, the uppermost end of the support plate lifting driving rod 404 is connected to a first dynamic sealing flange 405, the support plate lifting driving rod 404 passes through the first cavity welding flange 403 and extends into the vacuum furnace chamber 100, the lower end of the lifting driving rod 404 is fixedly connected to the mounting position of the hollowed-out support plate 104 at the uppermost layer, and meanwhile, the two lower ends of the lifting driving rod 404 are fixedly connected to mounting rods 406 capable of passing through the mounting holes 406 at the mounting position of all the hollowed-out support plates 104, and the mounting rods can be fixed to the lower end of the first hollow-out mounting flange 403 at the furnace door 700.

The output end 411 of the first lifting driving motor 401 is connected with a floating joint 407, the lower end of the floating joint 407 is fixedly connected with a first movable sealing flange 405, the lower end of the first movable sealing flange 405 is fixedly connected with a carrier plate lifting driving rod 404, a welding corrugated pipe 408 is arranged between the first movable sealing flange 405 and a first cavity sealing flange 403 on the outer side of the carrier plate lifting driving rod 404 and is used for protecting the carrier plate lifting driving rod 404 and guiding the moving track of the floating joint, and sealing rings 410 are arranged on the contact surfaces of the welding corrugated pipe 408 and the first cavity sealing flange 403 as well as the contact surfaces of the welding corrugated pipe 408 and the first movable sealing flange 405 to ensure the air tightness of the communication with the interior of the vacuum furnace body 100; the inner side of the lifting driving bracket 402 is provided with a lifting linear guide rail 409, and the first dynamic sealing flange 405 can move along the lifting linear guide rail 409, so that the lifting linear direction is further stabilized.

The coating machine of the invention further comprises a support plate lifting module 600, wherein the support plate lifting module 600 comprises a module lifting rod 601, the upper end of the module lifting rod 601 is provided with a second lifting driving motor 602, a lifting slide rail 603 is arranged on the module lifting rod 601 along the height direction of the module lifting rod, a lifting module clamp 604 is arranged on the lifting slide rail 603, the lifting module clamps 604 are respectively positioned at two sides of the lifting slide rail 603, the lifting module clamps 604 can be respectively connected to the lifting driving support 402 through connecting blocks (not shown, and common square steel pieces can be adopted according to actual size and connection requirements) and can drive the lifting driving support 402 to move up and down so as to enable the support plate lifting assembly 400 to move up and down, and the up and down movement of the support plate lifting assembly 400 can drive a hollow support plate group (silicon wafer carrier) formed by a hollow support plate 104 to upwards leave the vacuum furnace chamber 100 or downwards enter the vacuum furnace chamber 100.

The upper surface of the vacuum furnace chamber is provided with a bedplate 500, a feeding port 501 is formed in the bedplate, the feeding port 501 is communicated with the inside of the vacuum furnace chamber 100, and the feeding port 501 can allow the silicon wafer carrier to move up and down so as to enter or exit the inside of the vacuum furnace chamber 100; when the silicon wafer carrier enters the vacuum chamber 100, the furnace door 700 may seal the feeding port 501, it should be noted that the furnace door 700 is actually solid, and in order not to block the structural schematic of the lower part, the furnace door in fig. 1 only shows the outline frame of the furnace door 700.

An electrode pushing mechanism is arranged at the bottom of the vacuum furnace chamber 100, a preloading device of an electrode slice is arranged on the electrode pushing mechanism, the pre-loading device is provided with pre-loading positions of the electrode plates at equal intervals, the pre-loading positions comprise plasma electrodes 300 which are vertically arranged, the plasma electrode includes a plasma electrode positive block 302 and a plasma electrode negative block 303, the plasma electrode positive electrode block 302 and the plasma electrode negative electrode block 303 are both installed and fixed on a bottom plate 304, a certain distance is left between them, a plurality of steps 305 are respectively arranged on one sides of the plasma electrode positive block 302 and the plasma electrode negative block 303 facing the inside of the vacuum furnace body at equal intervals, a clamping groove capable of transversely mounting an electrode plate 301 is formed between the adjacent steps 305, each step 305 at least comprises a first boss 3051 and a second boss 3052 from bottom to top, wherein, the second lug boss 3052 protrudes from the first lug boss 3051, a clamping groove for clamping the electrode plate 301 is formed between the second lug boss 3052 of the previous step and the first lug boss 3051 of the next step, a convex point 3053 is arranged on the lower surface of the second lug boss 3052, used for propping against the electrode plate, a slope 3054 is arranged at the step corner of the first boss 3051 to prevent scratching the electrode plate, the height of the first boss 3 on the plasma electrode positive block 302 is smaller than the height of the first boss on the plasma electrode negative block, and the height of the second boss on the plasma electrode positive electrode block is greater than that of the second boss on the plasma electrode negative electrode block, and the steps 305 on the plasma electrode positive block 302 and the plasma electrode negative block 303 are arranged in a staggered manner, as shown in fig. 3, a plurality of electrode sheet loading stations 306 are formed, the same silicon wafer can be clamped by two steps 305 on two sides at the same time, that is, the upper and lower surfaces of the silicon wafer are touched by the plasma electrode positive electrode block 302 and the plasma electrode negative electrode block 303 respectively.

As shown in fig. 3, a vacuum interface 112 is disposed below the bottom of the vacuum furnace chamber 100 and is used for vacuumizing the sealed furnace body, a transverse pushing opening 113 is disposed on the other side of the bottom of the vacuum furnace chamber 100, and the electrode pushing mechanism 800 can push the plasma electrode 300 inwards through the transverse pushing opening 113.

As shown in fig. 6, the outer side of the transverse pushing opening 113 is sealed by a second cavity welding flange 801, the outer end of the second cavity welding flange 801 is abutted to a second movable sealing flange 802, the outer end of the second movable sealing flange 802 is abutted to a cylinder mounting flange 803, the electrode pushing mechanism 800 further comprises an electrode pushing cylinder 804, the electrode pushing cylinder 804 is mounted on the cylinder mounting flange 803, the output end 805 of the electrode pushing cylinder 804 penetrates through the cylinder mounting flange 803 and is connected to a cylinder connecting shaft 806, the cylinder connecting shaft 806 penetrates through the second movable sealing flange 802 and extends into the second cavity welding flange 801, an electrode pushing rod 807 is connected inside the second cavity welding flange 801, the position where the cylinder connecting shaft 806 is connected with the output end 805 of the electrode pushing cylinder 804 is sealed and fixed by a movable sealing flange end cover 808, at least two dynamic sealing rings 809 are arranged on the contact surface where the cylinder connecting shaft 806 is sealed by the movable sealing flange end cover 808, the dynamic sealing rings 809 are also communicated with the inner cavity of the furnace body, so that the dynamic sealing rings 809 are required to ensure that the sealing rings 809 have excellent wear resistance and can be sealed in a smooth state without affecting the movement, and a lubricant can be matched with the solid-liquid dynamic sealing rings 809 to form a solid-liquid dynamic sealing ring 810.

As shown in fig. 1-3, a boost plate 307 is disposed on one side of the lower end of the plasma electrode 300, a transverse slider 308 is fixedly disposed on the lower surface of the bottom plate 304 of the plasma electrode 300, an electrode translation guide rail 114 is disposed at the bottom of the vacuum furnace chamber, the transverse slider 308 is matched with the electrode translation guide rail 114, and the electrode push rod 807 can push against the boost plate 307 and push the plasma electrode 300 to move inward along the electrode translation guide rail 114.

As shown in fig. 1-3, the plasma structure 900 is installed on a platen 500 of a vacuum furnace chamber, the plasma structure includes a plasma structure support 901 and a plasma structure driving cylinder 902, the plasma structure support 901 is provided with a plasma electrode column 903 and a plasma structure translation guide rail 904, the plasma structure electrode column 904 can penetrate through the platen 500 and extend into the vacuum furnace chamber 100, the plasma structure electrode column 904 can slide up and down along the plasma structure translation guide rail 904 under the driving of the plasma structure driving cylinder 902, and can touch the plasma electrode 300 in the vacuum furnace chamber 100 as shown in fig. 3, so as to conduct and realize the plasma of gas and perform the diffusion process.

When the PECVD equipment is used, firstly, as shown in the state of fig. 1, a sucker in the prior art or other modes are adopted for loading silicon wafers, after the silicon wafers are filled, the silicon wafer carrier and the silicon wafers on the silicon wafer carrier are moved downwards to enter a vacuum furnace chamber 100, then the interior of the furnace body is vacuumized from a vacuumizing interface 112, an air inlet and outlet device can be arranged on a furnace door 700 according to the mode in the prior art, reaction gas and protective gas are introduced according to the requirements, then, a motor pushing mechanism is started, a motor is pushed to the position overlapped with the silicon wafer carrier, at the moment, a motor layer and a silicon wafer layer are arranged at intervals to form a reaction station, after the plasma electrodes are pushed in place, the positions of plasma electrode columns 904 on a plasma structure 900 are adjusted (the plasma electrode columns 904 are also arranged in pairs and are arranged at a certain distance, the plasma electrode columns 904 corresponding to the positive electrode and the negative electrode are respectively communicated with an electrode block 302 and a plasma electrode block 303), the reaction gas is in a plasma state by electrifying, diffusion reaction is carried out, tail gas is released, and the silicon wafers are taken out of the furnace.

Claims

1. A PECVD film plating machine comprises a vacuum furnace chamber for film plating operation, and is characterized in that at least two stations related to a silicon wafer are arranged in the vacuum furnace chamber, wherein one station is a preloading station of the silicon wafer, the other station is a firing station of the silicon wafer, a loading station of the silicon wafer is arranged above the firing station of the silicon wafer, the silicon wafer is loaded into a hollowed-out support plate through a translation mechanism on the loading station of the silicon wafer, the hollowed-out support plate comprises a plurality of hollowed-out support plates, the hollowed-out support plates are arranged above and below the loading station of the silicon wafer and are uniformly distributed at equal intervals to form a silicon wafer carrier, at least one hollowed-out part and one installation part are arranged on a single hollowed-out support plate, the hollowed-out part is positioned in the middle of the hollowed-out support plate, the installation part is positioned on one side of the hollowed-out support plate, and the installation parts of the hollowed-out support plates are positioned on the same side of the hollowed-out support plate; the mounting part is fixed on a support plate lifting assembly, the support plate lifting assembly is mounted on one side of a vacuum furnace chamber, an electrode pushing mechanism is arranged at the bottom of the vacuum furnace chamber, a preloading device of an electrode plate is arranged on the electrode pushing mechanism, preloading parts of the electrode plate are arranged on the preloading device at equal intervals, the preloading parts comprise vertically arranged plasma electrodes, preloading stations of the electrode plate are arranged on the plasma electrodes at equal intervals along the height direction of the plasma electrodes, the preloading stations of the electrode plate comprise clamping grooves capable of transversely mounting the electrode plate, and the intervals of the clamping grooves are the same as the intervals of the hollowed-out support plate; the upper end of the plasma electrode is connected to the plasma structure through a plasma electrode post; the bottom of the vacuum furnace chamber is provided with a vacuumizing interface;

the support plate lifting assembly comprises a first lifting driving motor, the first lifting driving motor is installed on a lifting driving support, the lifting driving support can be erected on the upper portion of a vacuum furnace chamber, a first cavity welding flange is arranged at the installation position of the lifting driving support and the vacuum furnace chamber, the first lifting driving motor is connected with and drives a support plate lifting driving rod, the uppermost end of the support plate lifting driving rod is connected onto a first dynamic sealing flange, the support plate lifting driving rod penetrates through the first cavity welding flange and extends into the vacuum furnace chamber, the lower end of the support plate lifting driving rod is fixedly connected onto the installation position of the uppermost hollowed support plate, meanwhile, the lower end of the support plate lifting driving rod is fixedly connected with two installation rods capable of penetrating through installation holes in the installation positions of all hollowed support plates, and the bottom ends of the two installation rods are fixedly connected onto the installation position of the lowermost hollowed support plate;

the support plate lifting assembly of the coating machine further comprises a support plate lifting module, the support plate lifting module comprises a module lifting rod, a second lifting driving motor is arranged at the upper end of the module lifting rod, a lifting slide rail is arranged on the module lifting rod along the height direction of the module lifting rod, lifting module fixtures are mounted on the lifting slide rail and are respectively located on two sides of the lifting slide rail, the lifting module fixtures can be respectively connected to a lifting driving support through a connecting block and can drive the lifting driving support to move up and down so that the support plate lifting assembly moves up and down, and the support plate lifting assembly can move up and down to drive a hollowed-out support plate group to upwards leave a vacuum furnace chamber or downwards enter the vacuum furnace chamber.

2. The PECVD coating machine as recited in claim 1, wherein said hollowed-out carrier comprises a square frame and a cross-shaped support disposed in the square frame, the cross-shaped support divides the space enclosed by the square frame into four equidistant square hollowed-out regions, both the square frame and the cross-shaped support are made of quartz material, the width of the square frame and the cross-shaped support is not more than 1/10 of the width of a single hollowed-out region, so as to ensure that a sufficient surface region is left for firing silicon wafers, and the thickness of the square frame and the cross-shaped support is not less than the thickness of the silicon wafers.

3. The PECVD film coating machine as claimed in claim 1, wherein each hollowed-out area is provided with a clamping point, the clamping point is arranged in the middle of the edge of each hollowed-out area and is arranged close to the lower bottom surface in the thickness direction of the hollowed-out plate, the clamping point comprises a semicircular sheet, the clamping point is also supported by a quartz material, and the width of the clamping point is not more than 2 times of the thickness of the silicon wafer.

4. The PECVD film coating machine as recited in claim 1, wherein the mounting portion is disposed at a central portion of an outer side of one side of the square frame, and the mounting portion has two mounting holes, wherein the two mounting holes have the same size and shape and are symmetrically disposed along a center of the square frame.

5. A PECVD film coating machine as in claim 1, wherein the output end of the lifting driving motor is connected with a floating joint, the lower end of the floating joint is fixedly connected with a first movable sealing flange, the lower end of the first movable sealing flange is fixedly connected with a support plate lifting driving rod, and a welding corrugated pipe is arranged between the first movable sealing flange and a cavity sealing flange outside the support plate lifting driving rod and used for protecting the support plate lifting driving rod and guiding the moving track of the floating joint; the inner side of the lifting driving support is provided with a lifting linear guide rail, and the dynamic sealing flange can move along the lifting linear guide rail, so that the lifting linear direction is further stabilized.

6. The PECVD film coating machine as recited in claim 1, wherein one side of the bottom of the vacuum chamber is provided with a transverse pushing hole, the electrode pushing mechanism can push the plasma electrode inwards through the transverse pushing hole, the outer side of the transverse pushing hole is sealed by a second chamber welding flange, the outer end of the second chamber welding flange is butted with a second movable sealing flange, the outer end of the second movable sealing flange is butted with a cylinder mounting flange, the electrode pushing mechanism further comprises an electrode pushing cylinder, the electrode pushing cylinder is mounted on the cylinder mounting flange, the output end of the electrode pushing cylinder penetrates through the cylinder mounting flange and is connected to a cylinder connecting shaft, the cylinder connecting shaft penetrates through the second movable sealing flange and extends into the second chamber welding flange, an electrode pushing rod is connected to the inside of the second chamber welding flange, one side of the lower end of the plasma electrode is provided with a boosting plate, the lower surface of the plasma electrode is provided with a transverse sliding block, the bottom of the vacuum chamber is provided with an electrode translation guide rail, the transverse sliding block is matched with the electrode translation guide rail, and the electrode pushing rod can push the boosting plate and push the plasma electrode to move inwards along the electrode translation guide rail.

7. The PECVD film plating machine as recited in claim 1, wherein said plasma electrode comprises a plasma electrode positive block and a plasma electrode negative block, said plasma electrode positive block and said plasma electrode negative block are mounted and fixed on a bottom plate with a certain distance therebetween, said plasma electrode positive block and said plasma electrode negative block are respectively provided with a plurality of steps at equal intervals toward one side in a vacuum furnace body, a slot capable of transversely mounting a silicon wafer is formed between adjacent steps, each step at least comprises a first boss and a second boss from bottom to top, wherein the second boss protrudes out of the first boss, a slope is arranged at a step corner of the second boss, the height of the first boss on the plasma electrode positive block is smaller than the height of the first boss on the plasma electrode negative block, and the height of the second boss on the plasma electrode positive block is larger than the height of the second boss on the plasma electrode negative block, so that the same silicon wafer can be simultaneously clamped by two electrode blocks, and the upper and lower surfaces of the plasma electrode block are respectively touched by the plasma electrode block and the plasma electrode block.

8. The PECVD coating machine as claimed in claim 1, wherein a platen is arranged on the upper surface of the vacuum furnace chamber, a feeding port is formed on the platen, the feeding port is communicated with the inside of the vacuum furnace chamber, and the feeding port can allow the silicon wafer carrier to move up and down so as to enter or exit the inside of the furnace chamber; the plasma structure is installed on a platen of a vacuum furnace chamber and comprises a plasma structure support and a plasma structure driving cylinder, a sliding structure of a plasma electrode post and the plasma electrode post is arranged on the plasma structure support, the plasma structure electrode post can penetrate through the platen and extend into the vacuum furnace chamber, and the plasma structure electrode post can slide along an electrode translation guide rail under the driving of the plasma structure driving cylinder and touch a plasma electrode in the vacuum furnace chamber.