CN116856040B - Conductive jig for copper plating of silicon wafer - Google Patents
Conductive jig for copper plating of silicon wafer Download PDFInfo
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- CN116856040B CN116856040B CN202311116669.2A CN202311116669A CN116856040B CN 116856040 B CN116856040 B CN 116856040B CN 202311116669 A CN202311116669 A CN 202311116669A CN 116856040 B CN116856040 B CN 116856040B
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- silicon wafer
- clamp
- conductive
- copper plating
- limiting
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 111
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 109
- 239000010703 silicon Substances 0.000 title claims abstract description 109
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 39
- 239000010949 copper Substances 0.000 title claims abstract description 39
- 238000007747 plating Methods 0.000 title claims abstract description 32
- 235000012431 wafers Nutrition 0.000 claims description 95
- 238000003860 storage Methods 0.000 claims description 29
- 238000000429 assembly Methods 0.000 claims description 24
- 230000000712 assembly Effects 0.000 claims description 24
- 125000006850 spacer group Chemical group 0.000 claims description 4
- 238000001125 extrusion Methods 0.000 claims description 3
- 230000007246 mechanism Effects 0.000 abstract description 10
- 230000003139 buffering effect Effects 0.000 abstract description 3
- 230000008901 benefit Effects 0.000 abstract description 2
- 230000006835 compression Effects 0.000 description 10
- 238000007906 compression Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 238000009713 electroplating Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000009434 installation Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
- C25D17/08—Supporting racks, i.e. not for suspending
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention provides a conductive jig for copper plating of a silicon wafer, which is used for solving the problem that no fixed specification is applied to a loading mechanism, a fixing mechanism and a conductive mechanism of the silicon wafer when the silicon wafer is electroplated with copper in the prior art. The invention provides a conductive jig for copper plating of a silicon wafer, which comprises the following components: the support plate, eighty article placing grooves have been seted up on the support plate, article placing grooves link up the support plate, and article placing grooves middle part outer fringe limit is provided with square concave station, every square concave station four corners of article placing grooves all is provided with the buffering and places the subassembly, the front end and the rear end of support plate correspond and are provided with sixteen pairs of drive assembly, and every is connected through the universal driving shaft to drive assembly, install ten pairs of spacing subassemblies that open clamp on the universal driving shaft, open and press from both sides spacing subassembly setting at the support plate upper wall, and open and press from both sides spacing subassembly correspondence and distribute the four corners of article placing grooves. The high-capacity silicon wafer loading device has the advantages of being convenient to install, high in silicon wafer limiting capacity and high in conductive connection stability.
Description
Technical Field
The invention relates to the technical field of silicon wafer conduction, in particular to a conductive jig for copper plating of a silicon wafer.
Background
Copper electroplating is an electrochemical process that utilizes the principle of electrolysis to plate a thin layer of copper on the surface of a target conductor. Copper is not only low in resistivity but also has excellent electromigration resistance, and therefore copper is the most potential metal material in interconnect technology applications. The monocrystalline silicon has better conductivity and good physical and mechanical properties, can be widely applied to the field of micro-electromechanical systems and becomes a main material for manufacturing micro-mechanical structures, so that the realization of the plating of the thin copper film on the monocrystalline silicon structure has extremely important significance to the micro-electromechanical system industry.
The existing thin film deposition technology for covering copper on the surface of monocrystalline silicon mainly comprises a sputtering method, a chemical vapor deposition method, an electroplating method and the like, but the sputtering method has poor coverage on a step structure, the chemical vapor deposition method has high production cost, the obtained deposition rate is low, and impurities are easy to introduce in the production process. The electroplating technology is suitable for copper plating of the silicon wafer due to the characteristics of simple production equipment, operability at room temperature and the like, but the existing copper plating technology of the silicon wafer is not mature, and no fixed specification is applied to a loading mechanism, a fixing mechanism and a conductive mechanism of the silicon wafer, so that the silicon wafer is lack of proper loading and fixing tools in the process of immersing the silicon wafer into electroplating liquid, the silicon wafer is easy to displace and damage, and the processing efficiency of the silicon wafer is reduced due to small loading capacity; the unreasonable arrangement of the electroplating wires for conduction can also increase the whole volume of the silicon wafer loading tool, increase the installation difficulty, influence the contact quality of the silicon wafer and the conducting end, ensure abnormal current and voltage, poor stability of electric connection and influence the charging uniformity of the silicon wafer and the copper plating quality of the silicon wafer.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, the present invention aims to provide a jig for copper plating of silicon wafers, which has a large capacity, is convenient for mounting the silicon wafers, and has a high limiting capacity for the silicon wafers and a high conductive connection stability.
To achieve the above and other related objects, the present invention provides a conductive jig for copper plating of a silicon wafer, comprising:
the carrying plate is provided with eighty storage grooves, the storage grooves penetrate through the carrying plate, square concave tables are arranged on the outer edge of the middle of each storage groove, and buffer placement components are arranged at four corners of each square concave table of each storage groove;
the buffer placement component comprises folding grooves, limiting frames, telescopic sliding drums, pressure springs and placement plates, wherein the folding grooves are formed in four corners of each square concave table of the storage groove, the limiting frames are fixed on the outer edges of the folding grooves, four telescopic sliding drums are arranged in the folding grooves at equal intervals, the pressure springs are arranged on the outer walls of the telescopic sliding drums, the placement plates are arranged between the pressure springs and the upper ends of the four telescopic sliding drums, the lower ends of the pressure springs and the four telescopic sliding drums are fixed with the bottoms of the folding grooves, and silicon chips can be placed on the four placement plates of the storage groove;
sixteen pairs of driving assemblies are correspondingly arranged at the front end and the rear end of the carrier plate, each pair of driving assemblies is connected through a linkage shaft, ten pairs of clamping limiting assemblies are arranged on the linkage shaft, the clamping limiting assemblies are arranged on the upper wall of the carrier plate, and the clamping limiting assemblies are correspondingly distributed at four corners of the storage groove.
Optionally, the drive assembly includes bottom plate, cylinder, rack, slide rail and slider, front end and rear end upper wall of support plate correspond respectively and are fixed with sixteen to the bottom plate, the bottom plate is second grade echelonment, install the cylinder on the high-order face of bottom plate, the output of cylinder is fixed and is provided with two racks, be fixed with two slide rails on the low-order face of bottom plate, sliding connection has the slider on the slide rail, two the upper wall of slider respectively with the lower wall fixed connection of two racks.
Optionally, the drive assembly still includes gear, supporting seat and output shaft, the front and back end upper wall of support plate all is fixed with sixteen pairs of supporting seats, every pair the supporting seat sets up respectively one-to-one in the place ahead and the rear of bottom plate, every pair rotate between the upper portion of supporting seat and be provided with the output shaft, two gears have been cup jointed to the middle part outer wall of output shaft is fixed, and two the gear respectively with two the rack corresponds the meshing is connected.
Optionally, the output length of the cylinder is equal to the length of the rack, and the number of teeth of the rack is half of that of the gear.
Optionally, open and press from both sides spacing subassembly and include base, swivel mount, bayonet lock, initiative rocking arm, spacer pin, driven rocking arm and open the clamp end, the upper wall of support plate is fixed with the base, the one end of base is fixed with the swivel mount, swivel mount lower part and upper portion are installed the initiative rocking arm and are opened the clamp end through two bayonet locks rotation respectively, the middle part of initiative rocking arm is provided with driven rocking arm through two spacer pins rotation, driven rocking arm sets up between the inboard of initiative rocking arm and the outside of opening the clamp end, and the movable end that the initiative rocking arm was kept away from to driven rocking arm is installed through the bayonet lock with the middle part rotation of opening the clamp end.
Optionally, the spacing subassembly of opening clamp still includes tension spring, the inner of initiative rocking arm and the inner of base all are provided with two tension springs.
Optionally, open and press from both sides spacing subassembly still includes base, archimedes spiral shell dish and stopper, the front portion and the rear portion of base all are fixed with the base, twenty pairs the rotation is provided with the universal driving shaft between the base, the fixed sleeve joint of universal driving shaft outer wall has twenty pairs of archimedes spiral shell dish, twenty pairs the fixed stopper that is provided with of outer wall of initiative rocking arm, twenty pairs the stopper corresponds rotation friction contact with twenty pairs of archimedes spiral shell dish.
Optionally, open and press from both sides spacing subassembly still includes chuck and electrically conductive sandwich, open and press from both sides and hold and install the chuck perpendicularly in the movable end that is kept away from the swivel mount, be provided with electrically conductive sandwich in the chuck, four electrically conductive sandwich is switched on with the intermittent extrusion contact in four corners of silicon chip, electrically conductive sandwich's wire passes chuck, open clamp end, swivel mount and carrier plate and is connected with the cathode conductive end.
As described above, the conductive jig for copper plating of the silicon wafer has at least the following beneficial effects:
1. sixteen pairs of driving assemblies are correspondingly arranged at the front end and the rear end of the carrier plate, so that power can be provided for the clamping opening limiting assemblies positioned at the four corners of the storage groove to synchronously open the clamping heads upwards and press the clamping heads downwards, the two-end control of the multipoint silicon wafer clamping opening is realized, the structure of the silicon wafer loading tool is greatly simplified on the basis of ensuring the silicon wafer loading efficiency, the whole volume of the silicon wafer loading tool is reduced, and the practicability is strong;
2. the ten opposite clamping limiting assemblies are arranged on each linkage shaft, the clamping limiting assemblies at the four corners of the storage groove are controlled to synchronously press downwards or open upwards the clamping heads, so that the silicon wafer can be limited and unloaded, displacement and damage of the silicon wafer during copper plating are prevented, the damage reporting rate and the rejection rate of silicon wafer treatment are reduced, the silicon wafer treatment cost is reduced, and the economic benefit is improved;
3. the wires are distributed in the driving assembly and the carrier plate, so that the occupied volume of the conductive mechanism is reduced and the space utilization efficiency is improved on the basis of ensuring the safety and the tightness of the wires;
4. the conductive sandwich is added at the limit end of the silicon wafer, so that the contact quality of the silicon wafer and the conductive end is ensured, the current and the voltage are normal, the stability of electric connection is high, the charging uniformity of the silicon wafer is good, and the copper plating quality of the silicon wafer is high;
5. through setting up the buffering at every square concave station four corners of putting the thing groove and placing the subassembly, can carry out the release buffering to the pressure that places board and silicon chip received, avoided the direct whole pressure of chuck to act on the silicon chip, cause the silicon chip to take place the broken condition of impetus in the installation for the security of silicon chip installation and fixed is high.
Drawings
The structures, proportions, sizes, etc. shown in the present specification are shown only for the purposes of illustration and description, and are not intended to limit the scope of the invention, which is defined by the claims, so that any structural modifications, changes in proportions, or adjustments of sizes, which do not affect the efficacy or the achievement of the present invention, should fall within the ambit of the technical disclosure.
Fig. 1 is a perspective view of the overall structure of the conductive jig for copper plating on silicon wafers according to the present invention.
Fig. 2 is a schematic top view showing the whole structure of the present invention in the state of no silicon wafer.
Fig. 3 is a perspective view of the overall structure of the invention in a silicon-free state from southwest perspective.
Fig. 4 is a schematic front view of the overall structure of the present invention.
Fig. 5 is a perspective view of a driving assembly structure according to the present invention from a southwest perspective.
Fig. 6 is a schematic front view of the driving assembly structure of the present invention.
Fig. 7 is a perspective view of the open clamp limiting assembly according to the present invention from a southwest perspective.
Fig. 8 is a perspective view of the southeast view of the structure of the open clamp limiting assembly of the present invention.
Fig. 9 is a schematic front view of the structure of the open clamp limiting assembly of the present invention.
Fig. 10 is a schematic front view of the transmission path of the open clamp limiting assembly of the present invention.
Fig. 11 is an enlarged view showing the structure of the area a in fig. 2 according to the present invention.
Fig. 12 is an enlarged view showing the structure of the area B in fig. 3 according to the present invention.
Fig. 13 is an enlarged view showing the structure of the region C in fig. 3 according to the present invention.
Fig. 14 is an enlarged view showing the structure of the D area in fig. 3 according to the present invention.
Description of element reference numerals
1. A carrier plate; 101. a storage groove;
2. a buffer placement assembly; 201. a folding groove; 202. limiting frames; 203. a telescopic slide cylinder; 204. a pressure spring; 205. placing a plate; 206. a silicon wafer;
3. a drive assembly; 301. a bottom plate; 302. a cylinder; 303. a rack; 304. a slide rail; 305. a slide block; 306. a gear; 307. a support base; 308. an output shaft;
4. a linkage shaft;
5. opening and clamping the limiting component; 501. a base; 502. rotating base; 503. a bayonet lock; 504. an active swivel arm; 505. a limiting pin; 506. a driven rotating arm; 507. opening the clamping end; 508. a chuck; 509. a tension spring; 510. a base; 511. archimedes spiral coil; 512. a limiting block; 513. and a conductive sandwich.
Description of the embodiments
The present invention will be further described with reference to the accompanying drawings and specific examples, which are not intended to be limiting, so that those skilled in the art will better understand the invention and practice it.
As the background technology is still immature, the existing silicon wafer copper plating technology is not provided with a fixing mechanism and a conductive mechanism, so that the silicon wafer is easy to displace and damage due to the lack of proper loading and fixing tools in the process of immersing the silicon wafer in the electroplating solution; the unreasonable arrangement of the electroplating wires for conduction can also increase the whole volume of the silicon wafer loading tool, increase the installation difficulty, influence the contact quality of the silicon wafer and the conducting end, ensure abnormal current and voltage, poor stability of electric connection and influence the charging uniformity of the silicon wafer and the copper plating quality of the silicon wafer.
As shown in fig. 1 to 14, in order to solve the above problems, the inventors have intensively studied to find that, when the chuck 508 of the spacing assembly 5 is opened to clamp the silicon wafer 206, the silicon wafer 206 is electrically conductive, and in a state where the relative position of the silicon wafer 206 and the object placing slot 101 is kept stable, the contact quality between the silicon wafer 206 and the conductive end is ensured, and the electrical connection stability is strong, so that the invention provides a conductive jig for copper plating of the silicon wafer, which comprises:
the carrier plate 1, eighty article placing grooves 101 are formed in the carrier plate 1, the article placing grooves 101 penetrate through the carrier plate 1, square concave tables are arranged on the outer edges of the middle of the article placing grooves 101, and buffer placing components 2 are arranged at four corners of each square concave table of the article placing grooves 101;
sixteen pairs of driving assemblies 3 are correspondingly arranged at the front end and the rear end of the carrier plate 1, each pair of driving assemblies 3 is connected through a linkage shaft 4, ten pairs of open-clamp limiting assemblies 5 are arranged on the linkage shaft 4, the open-clamp limiting assemblies 5 are arranged on the upper wall of the carrier plate 1, and the open-clamp limiting assemblies 5 are correspondingly distributed at four corners of the storage groove 101.
In the use process, eight pairs of driving components 3 positioned at the left part of each row of object placing grooves 101 drive a linkage shaft 4 to rotate clockwise by one hundred and eighty degrees, eight pairs of driving components 3 positioned at the right part of each row of object placing grooves 101 drive the linkage shaft 4 to rotate anticlockwise by one hundred and eighty degrees, power is provided for transmission of the open clamping limiting component 5, the open clamping limiting component 5 is driven to open the clamping head 508 upwards, the buffer placing component 2 in the object placing grooves 101 breaks away from the compression of the clamping head 508, the placing plate 205 rebounds upwards, the rear eighty pieces of silicon wafers 206 are sucked under the action of the sucking disc and then placed in the eighty object placing grooves 101, the placing plate 205 at four corners of the object placing grooves 101 bear the silicon wafers 206, at the moment, the eight pairs of driving components 3 positioned at the left part of each row of object placing grooves 101 drive the linkage shaft 4 to rotate anticlockwise by one hundred and eighty degrees, the eight pairs of driving components 3 positioned at the right part of each row of object placing grooves 101 drive the linkage shaft 4 to rotate anticlockwise by one hundred and eighty degrees, the buffer placing component 5 can press the open clamping limiting component 508 downwards, the silicon wafers 508 can be pressed by one hundred and eighty degrees, the conductive clamping head 508 can be pressed by the buffer placing component 5, the conductive clamping head 206 can be contacted with the four corners of the silicon wafers 206, and the silicon wafers 206 can be pressed down along with the conductive clamping head 508, and the conductive silicon wafers can move downwards, and the four conductive clamping head 508 can be pressed down along with the chuck 508, and the silicon wafer can move down, and the four conductive silicon wafer can be placed down.
Example 1
Referring to fig. 1-6, 11-12 and 14, in order to achieve the above and other related objects, the present invention provides a conductive jig for copper plating on a silicon wafer, comprising: the driving assembly 3, the driving assembly 3 includes bottom plate 301, cylinder 302, rack 303, slide rail 304 and slider 305, the front end and the rear end upper wall of carrier plate 1 correspond respectively and are fixed with sixteen pairs of bottom plates 301, bottom plate 301 is the second grade echelonment, install cylinder 302 on the high-order face of bottom plate 301, according to the copper plating cycle of silicon chip 206, set up the flexible speed and the flexible interval time of cylinder 302 output, the fixed two racks 303 that are provided with of output of cylinder 302 for when the output of cylinder 302 stretches out or contracts, can promote rack 303 to move about, be fixed with two slide rails 304 on the low-order face of bottom plate 301, slide rail 304 is last to be connected with slider 305 in a sliding manner, the upper wall of two sliders 305 respectively with the lower wall fixed connection of two racks 303, the slide rail 304 has restricted the displacement position of slider 305, namely limited the travel path to rack 303, make rack 303 keep horizontal when moving about.
More perfectly, as shown in fig. 5-6 and 14, the driving assembly 3 further includes a gear 306, a supporting seat 307 and an output shaft 308, sixteen pairs of supporting seats 307 are fixed on the upper walls of the front end and the rear end of the carrier plate 1, each pair of supporting seats 307 is respectively arranged in front of and behind the bottom plate 301 in a one-to-one correspondence manner, the output shaft 308 is rotatably arranged between the upper parts of each pair of supporting seats 307, the front end and the rear end of the linkage shaft 4 are both fixed with the output shaft 308 through a coupling, two gears 306 are fixedly sleeved on the outer walls of the middle part of the output shaft 308, and the two gears 306 are respectively in corresponding meshed connection with the two racks 303, when the racks 303 move left and right, the gears 306 are meshed to drive the output shaft 308 to rotate clockwise and anticlockwise, and as the output length of the air cylinder 302 is equal to the length of the racks 303, the number of teeth of the racks 303 is half that of the gears 306, namely, when the air cylinder 302 extends or retracts to the maximum path, the racks 303 drive the gears 306 to rotate clockwise or anticlockwise by one hundred eighty degrees, so that the output shaft 308 rotates clockwise or anticlockwise.
Specifically, before the silicon wafer 206 is installed in the storage tank 101, the cylinders 302 in the eight pairs of driving assemblies 3 at the left part of each storage tank 101 are started to extend out, so that the output ends of the cylinders can push the racks 303 to translate leftwards, drive the gears 306 to rotate clockwise, and can drive the eight pairs of output shafts 308 at the left part of each storage tank 101 to synchronously rotate clockwise, so as to drive the eight linkage shafts 4 at the left part of each storage tank 101 to link clockwise; simultaneously, the cylinders 302 in the eight pairs of driving assemblies 3 at the right part of each row of storage tanks 101 are started, so that the output ends of the cylinders extend, the racks 303 can be pushed to translate rightwards, the gears 306 are driven to rotate anticlockwise, the eight pairs of output shafts 308 at the right part of each row of storage tanks 101 can be driven to synchronously rotate anticlockwise, and the eight linkage shafts 4 at the right part of each row of storage tanks 101 are driven to be linked anticlockwise; therefore, the clamping opening limiting assemblies 5 positioned at the four corners of the storage tank 101 are synchronously powered to open the clamping heads 508 upwards, and the reverse operation is performed, so that the clamping opening limiting assemblies 5 can synchronously downwards power the clamping heads 508 to press the four corners of the silicon wafer 206, the two-end control of the multi-point silicon wafer 206 clamping opening is realized, the structure of the silicon wafer 206 loading tool is greatly simplified on the basis of ensuring the loading efficiency of the silicon wafer 206, the whole volume of the silicon wafer 206 loading tool is reduced, and the practicability is strong.
Example 2
Referring to fig. 1-4, 7-12 and 14, the present invention provides a conductive jig for copper plating on a silicon wafer, which further includes: the opening clamp limiting assembly 5 comprises a base 501, a swivel base 502, clamping pins 503, a driving rotating arm 504, limiting pins 505, a driven rotating arm 506 and an opening clamp end 507, wherein the base 501 is fixed on the upper wall of the carrier plate 1, one end of the base 501 is fixedly provided with the swivel base 502, the driving rotating arm 504 and the opening clamp end 507 are respectively installed at the lower part and the upper part of the swivel base 502 in a rotating mode through the two clamping pins 503, the driving rotating arm 504 is arranged at the outer side of the swivel base 502, the opening clamp end 507 is arranged at the inner side of the swivel base 502, the swivel base 502 provides a rotating base point for the driving rotating arm 504 and the opening clamp end 507, the middle part of the driving rotating arm 504 is provided with the driven rotating arm 506 in a rotating mode through the two limiting pins 505, the driven rotating arm 506 is arranged between the inner side of the driving rotating arm 504 and the outer side of the opening clamp end 507, and the movable end of the driven rotating arm 506 is far away from the driving rotating arm 504 and installed in a rotating mode through the middle part of the clamping pins 503 and the opening clamp end 507, so that the driven rotating arm 506 can follow the swinging of the driving rotating arm 504, and the opening clamp end 507 can be driven to move.
More perfectly, as shown in fig. 7-11, the opening clamp limiting assembly 5 further includes a tension spring 509, both the inner end of the driving rotary arm 504 and the inner end of the base 501 are provided with two tension springs 509, and the tension of the two tension springs 509 acts on the inner end of the driving rotary arm 504 to limit the driving rotary arm 504 so that the inner end is downward.
7-10, the opening and clamping limiting assembly 5 further comprises a base 510, an archimedes spiral wire disc 511 and a limiting block 512, wherein the base 510 is fixed on the front portion and the rear portion of the base 501, a linkage shaft 4 is rotatably arranged between the twenty pairs of bases 510, the twenty pairs of archimedes spiral wire discs 511 are fixedly sleeved on the outer walls of the linkage shaft 4, when the driving assembly 3 starts the linkage shaft 4 to rotate, the linkage shaft 4 can drive the archimedes spiral wire disc 511 to be linked, the limiting block 512 is fixedly arranged on the outer walls of the twenty pairs of driving rotating arms 504, the twenty pairs of limiting blocks 512 are in corresponding rotational friction contact with the twenty pairs of archimedes spiral wire discs 511, when the archimedes spiral wire disc 511 rotates to a large diameter surface, the limiting block 512 can be driven upwards to be lifted, and when the archimedes spiral wire disc 511 rotates to a small diameter surface, the limiting block 512 can be driven downwards to fall, and the inner end of the driving rotating arm 504 can be lifted along with the limiting block 512.
7-10, the open-clamp limiting assembly 5 further comprises a clamp 508 and a conductive clamp 513, wherein the clamp 508 is vertically installed in a movable end of the open-clamp end 507 far away from the swivel base 502, so that the movable end of the open-clamp end 507 can move downwards or upwards when being linked with the movement of the active swivel arm 504, the clamp 508 is controlled to press down or open four corners of the silicon wafer 206 upwards so as to install and limit the silicon wafer 206, the conductive clamp 513 is arranged in the clamp 508, four conductive clamp 513 are in intermittent extrusion contact conduction with four corners of the silicon wafer 206, a wire of the conductive clamp 513 passes through the clamp 508, the open-clamp end 507, the swivel base 502 and the carrier plate 1 to be connected with a cathode conductive end, and the clamp 508, the open-clamp end 507, the swivel base 502 and the carrier plate 1 are all made of insulating materials, so that the conductive clamp 513 can be in stable contact with the silicon wafer 206 to conduct when the clamp is limited by the clamp 508, the conductive clamp 206 is convenient for carrying copper plating the silicon wafer 206.
Specifically, when the driving assembly 3 starts the linkage shaft 4 to rotate, the linkage shaft 4 can drive the archimedes spiral wire disc 511 to be linked, when the archimedes spiral wire disc 511 rotates to a large diameter surface, the limiting block 512 is driven upwards, when the archimedes spiral wire disc 511 rotates to a small diameter surface, the limiting block 512 is driven downwards to fall, under the tensile force action of the tension spring 509 on the inner end of the driving rotary arm 504, the inner end of the driving rotary arm 504 is lifted along with the limiting block 512, the driving rotary arm 504 swings around the outer end bayonet 503 thereof, the driven rotary arm 506 is driven to be linked, the open clamp end 507 is pulled to rotate by taking the bayonet 503 of the rotating end thereof as a rotating base point, the movable end thereof can move downwards or upwards, the open clamp limiting assembly 5 at four corners of the object placing groove 101 is controlled to synchronously press downwards or open the clamp 508 upwards, so as to limit and unload the silicon wafer 206, and the clamp 206 can be in stable contact with the negative electricity with the silicon wafer 206, thereby facilitating copper plating of the 206, the installation of the silicon wafer 206 is facilitated, the silicon wafer 206 can be limited, the silicon wafer 206 can be prevented from being damaged, the silicon wafer 206 is damaged, the cost is reduced, the cost of the silicon wafer is reduced, and the cost is reduced; the wires are distributed in the driving assembly 3 and the carrier plate 1, so that the occupied volume of the conductive mechanism is reduced and the space utilization efficiency is improved on the basis of ensuring the safety and the tightness of the wires; the conductive sandwich 513 is added to the limiting end of the silicon wafer 206, so that the contact quality of the silicon wafer 206 and the conductive end is ensured, the current and voltage are normal, the stability of electrical connection is high, the charging uniformity of the silicon wafer 206 is good, and the copper plating quality of the silicon wafer 206 is high.
Example 3
Referring to fig. 1-3 and fig. 11-14, in order to achieve the above and other related objects, the present invention provides a conductive jig for copper plating on a silicon wafer, comprising: the buffer placing assembly 2 comprises folding grooves 201, limiting frames 202, telescopic sliding drums 203, pressure springs 204 and placing plates 205, the folding grooves 201 are formed in four corners of each square concave table of the storage groove 101, limiting frames 202 are fixed on the outer edges of the folding grooves 201, four telescopic sliding drums 203 are equidistantly arranged in the folding grooves 201, the pressure springs 204 are arranged on the outer walls of the four telescopic sliding drums 203, placing plates 205 are arranged between the four pressure springs 204 and the upper ends of the four telescopic sliding drums 203, the lower ends of the four pressure springs 204 and the four telescopic sliding drums 203 are fixed with the bottoms of the folding grooves 201, silicon wafers 206 can be placed on the four placing plates 205 of each storage groove 101, the four placing plates 205 in the storage groove 101 can respectively bear the four corners of the silicon wafers 206, an adhesion point is provided for opening and clamping the silicon wafers 206 of the limiting assemblies 5, the silicon wafers 206 are downwards compressed by the clamping heads 508 after the silicon wafers 206 are placed on the four placing plates 205, the four placing plates 205 are compressed down along with the compression force of the four placing plates 205, the silicon wafers 206 are compressed by the compression points, and the compression force is also reduced by the compression force of the four placing plates 205, and the compression force is directly exerted on the silicon wafers 206 due to the fact that the compression force is directly caused by the compression force is reduced, and the compression force is avoided, and the compression force is directly generated in the process.
While the invention has been described in detail in the foregoing general description and specific examples, it will be apparent to those skilled in the art that modifications and improvements can be made thereto. Accordingly, such modifications or improvements may be made without departing from the spirit of the invention and are intended to be within the scope of the invention as claimed.
Claims (8)
1. The utility model provides a silicon chip copper facing is with electrically conductive tool which characterized in that includes:
the carrying plate (1), eighty storage grooves (101) are formed in the carrying plate (1), the storage grooves (101) penetrate through the carrying plate (1), square concave platforms are arranged on the outer edges of the middle parts of the storage grooves (101), and buffer placement components (2) are arranged at four corners of each square concave platform of each storage groove (101);
the buffer placement assembly (2) comprises folding grooves (201), limiting frames (202), telescopic sliding drums (203), pressure springs (204) and placement plates (205), each square concave table of each storage groove (101) is provided with the folding grooves (201), the outer edges of the folding grooves (201) are fixedly provided with the limiting frames (202), four telescopic sliding drums (203) are equidistantly arranged in the folding grooves (201), the outer walls of the four telescopic sliding drums (203) are provided with the pressure springs (204), placement plates (205) are arranged between the upper ends of the pressure springs (204) and the four telescopic sliding drums (203), the lower ends of the pressure springs (204) and the four telescopic sliding drums (203) are fixed with the bottoms of the folding grooves (201), and silicon wafers (206) can be placed on the four placement plates (205) of each storage groove (101);
sixteen pairs of driving assemblies (3) are correspondingly arranged at the front end and the rear end of the carrier plate (1), each pair of driving assemblies (3) is connected through a linkage shaft (4), ten pairs of opening clamp limiting assemblies (5) are arranged on the linkage shaft (4), the opening clamp limiting assemblies (5) are arranged on the upper wall of the carrier plate (1), and the opening clamp limiting assemblies (5) are correspondingly distributed at four corners of the storage groove (101).
2. The conductive jig for copper plating of silicon wafer according to claim 1, wherein: the driving assembly (3) comprises a bottom plate (301), an air cylinder (302), racks (303), sliding rails (304) and sliding blocks (305), sixteen pairs of bottom plates (301) are correspondingly fixed on the front end and the rear end upper wall of the carrier plate (1), the bottom plate (301) is in a two-stage ladder shape, the air cylinder (302) is installed on the high-order surface of the bottom plate (301), two racks (303) are fixedly arranged at the output end of the air cylinder (302), two sliding rails (304) are fixedly arranged on the low-order surface of the bottom plate (301), the sliding blocks (305) are connected to the sliding rails (304) in a sliding mode, and the upper walls of the sliding blocks (305) are fixedly connected with the lower walls of the two racks (303) respectively.
3. The conductive jig for copper plating of silicon wafer according to claim 2, wherein: the driving assembly (3) further comprises gears (306), supporting seats (307) and an output shaft (308), sixteen pairs of supporting seats (307) are respectively fixed on the upper walls of the front end and the rear end of the carrier plate (1), each pair of supporting seats (307) are respectively arranged in front of and behind the base plate (301) in a one-to-one correspondence mode, the output shaft (308) is rotationally arranged between the upper parts of the supporting seats (307), two gears (306) are fixedly sleeved on the outer walls of the middle of the output shaft (308), and the two gears (306) are respectively connected with the two racks (303) in a corresponding meshing mode.
4. The conductive jig for copper plating on a silicon wafer according to claim 3, wherein: the output length of the air cylinder (302) is equal to the length of the rack (303), and the number of teeth of the rack (303) is half of that of the gear (306).
5. The conductive jig for copper plating of silicon wafer according to claim 1, wherein: the utility model provides a spacing subassembly of opening clamp (5) includes base (501), swivel mount (502), bayonet lock (503), initiative rocking arm (504), spacer pin (505), driven rocking arm (506) and opens clamp end (507), the upper wall of support plate (1) is fixed with base (501), the one end of base (501) is fixed with swivel mount (502), initiative rocking arm (504) and open clamp end (507) are installed through two bayonet lock (503) rotation respectively in swivel mount (502) lower part and upper portion, the middle part of initiative rocking arm (504) is provided with driven rocking arm (506) through two spacer pins (505) rotation, driven rocking arm (506) set up between the outside of the inboard of initiative rocking arm (504) and open clamp end (507), and the movable end that driven rocking arm (506) kept away from initiative rocking arm (504) is installed through the middle part rotation of bayonet lock (503) and open clamp end (507).
6. The conductive jig for copper plating on a silicon wafer according to claim 5, wherein: the opening clamp limiting assembly (5) further comprises tension springs (509), and two tension springs (509) are arranged at the inner end of the driving rotating arm (504) and the inner end of the base (501).
7. The conductive jig for copper plating on a silicon wafer according to claim 5, wherein: the opening clamp limiting assembly (5) further comprises a base (510), an Archimedes spiral coil (511) and a limiting block (512), the base (510) is fixed to the front portion and the rear portion of the base (501), twenty pairs of linkage shafts (4) are rotatably arranged between the bases (510), twenty pairs of Archimedes spiral coils (511) are fixedly sleeved on the outer walls of the linkage shafts (4), the limiting block (512) is fixedly arranged on the outer walls of the driving rotating arms (504), and the limiting block (512) and the twenty pairs of Archimedes spiral coils (511) are in corresponding rotation friction contact.
8. The conductive jig for copper plating on a silicon wafer according to claim 5, wherein: the open clamp limiting assembly (5) further comprises a clamp head (508) and a conductive clamp core (513), the clamp head (508) is vertically arranged in a movable end, far away from the rotary seat (502), of the open clamp end (507), the conductive clamp core (513) is arranged in the clamp head (508), four conductive clamp cores (513) are in intermittent extrusion contact conduction with four corners of the silicon wafer (206), and a wire of the conductive clamp core (513) penetrates through the clamp head (508), the open clamp end (507), the rotary seat (502) and the carrier plate (1) to be connected with a cathode conductive end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311116669.2A CN116856040B (en) | 2023-09-01 | 2023-09-01 | Conductive jig for copper plating of silicon wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311116669.2A CN116856040B (en) | 2023-09-01 | 2023-09-01 | Conductive jig for copper plating of silicon wafer |
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| CN116856040B true CN116856040B (en) | 2023-12-01 |
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|---|---|
| CN116856040A (en) | 2023-10-10 |
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