CN112663074B - 一种电催化合成高纯乙硅烷的系统 - Google Patents
一种电催化合成高纯乙硅烷的系统 Download PDFInfo
- Publication number
- CN112663074B CN112663074B CN202011543942.6A CN202011543942A CN112663074B CN 112663074 B CN112663074 B CN 112663074B CN 202011543942 A CN202011543942 A CN 202011543942A CN 112663074 B CN112663074 B CN 112663074B
- Authority
- CN
- China
- Prior art keywords
- rectifying tower
- communicated
- disilane
- outlet
- inlet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 94
- 230000002194 synthesizing effect Effects 0.000 title claims abstract description 10
- 238000000926 separation method Methods 0.000 claims abstract description 46
- 239000007789 gas Substances 0.000 claims abstract description 37
- 239000001257 hydrogen Substances 0.000 claims abstract description 37
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 37
- 238000000746 purification Methods 0.000 claims abstract description 23
- 230000006835 compression Effects 0.000 claims abstract description 18
- 238000007906 compression Methods 0.000 claims abstract description 18
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract 9
- 239000007788 liquid Substances 0.000 claims description 62
- 238000001514 detection method Methods 0.000 claims description 46
- 229910000077 silane Inorganic materials 0.000 claims description 26
- 238000003860 storage Methods 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 238000003786 synthesis reaction Methods 0.000 claims description 14
- 238000009413 insulation Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000003197 catalytic effect Effects 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 41
- 239000006227 byproduct Substances 0.000 abstract description 3
- 150000002431 hydrogen Chemical class 0.000 description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 10
- 238000009835 boiling Methods 0.000 description 7
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000006555 catalytic reaction Methods 0.000 description 4
- -1 lithium aluminum hydride Chemical compound 0.000 description 4
- 238000010992 reflux Methods 0.000 description 4
- 229910007264 Si2H6 Inorganic materials 0.000 description 3
- 235000019270 ammonium chloride Nutrition 0.000 description 3
- YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical compound [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 description 3
- 229910021338 magnesium silicide Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 150000004756 silanes Chemical class 0.000 description 3
- 238000001308 synthesis method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 2
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 2
- 229910010082 LiAlH Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000012280 lithium aluminium hydride Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000013094 purity test Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Images
Landscapes
- Silicon Compounds (AREA)
Abstract
Description
组分 | Si<sub>2</sub>H<sub>6</sub> | 生产日期 | 2017.06.01 |
批号 | 224168 | 截止日期 | 2019.06.01 |
净重 | 2000.00GM | 发行日期 | 2017.07.25 |
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011543942.6A CN112663074B (zh) | 2020-12-23 | 2020-12-23 | 一种电催化合成高纯乙硅烷的系统 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011543942.6A CN112663074B (zh) | 2020-12-23 | 2020-12-23 | 一种电催化合成高纯乙硅烷的系统 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112663074A CN112663074A (zh) | 2021-04-16 |
CN112663074B true CN112663074B (zh) | 2021-09-28 |
Family
ID=75409552
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202011543942.6A Active CN112663074B (zh) | 2020-12-23 | 2020-12-23 | 一种电催化合成高纯乙硅烷的系统 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112663074B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1098724A (zh) * | 1993-06-17 | 1995-02-15 | 瓦克化学有限公司 | 有机硅化合物的电化学合成方法和设备 |
EP0671487A1 (en) * | 1994-03-09 | 1995-09-13 | Osaka Gas Co., Ltd. | Method for producing disilanes |
JP3264683B2 (ja) * | 1991-10-31 | 2002-03-11 | アイワ株式会社 | 輝度信号明瞭化回路 |
CN102134324A (zh) * | 2011-02-28 | 2011-07-27 | 上海大学 | 含过渡金属元素聚硅烷及其制备方法 |
CN204963317U (zh) * | 2015-09-01 | 2016-01-13 | 内蒙古兴洋新材料科技有限公司 | 硅烷提纯塔塔顶冷冻和再沸器加热系统 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3016087B2 (ja) * | 1990-01-18 | 2000-03-06 | 達哉 庄野 | ジシランの製造方法 |
-
2020
- 2020-12-23 CN CN202011543942.6A patent/CN112663074B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3264683B2 (ja) * | 1991-10-31 | 2002-03-11 | アイワ株式会社 | 輝度信号明瞭化回路 |
CN1098724A (zh) * | 1993-06-17 | 1995-02-15 | 瓦克化学有限公司 | 有机硅化合物的电化学合成方法和设备 |
EP0671487A1 (en) * | 1994-03-09 | 1995-09-13 | Osaka Gas Co., Ltd. | Method for producing disilanes |
CN102134324A (zh) * | 2011-02-28 | 2011-07-27 | 上海大学 | 含过渡金属元素聚硅烷及其制备方法 |
CN204963317U (zh) * | 2015-09-01 | 2016-01-13 | 内蒙古兴洋新材料科技有限公司 | 硅烷提纯塔塔顶冷冻和再沸器加热系统 |
Also Published As
Publication number | Publication date |
---|---|
CN112663074A (zh) | 2021-04-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9034292B2 (en) | Method and apparatus for producing disilane through pyrolysis of monosilane | |
US20060222583A1 (en) | System and method for making Si2H6 and higher silanes | |
CN112647085B (zh) | 一种电催化合成高纯乙硅烷的方法 | |
CN103449449B (zh) | 制备三氯氢硅的方法及其设备 | |
CN112645336B (zh) | 生产硅烷、一氯硅烷、二氯硅烷和六氯乙硅烷的系统 | |
CN103449446B (zh) | 制备三氯氢硅的方法 | |
CN112663074B (zh) | 一种电催化合成高纯乙硅烷的系统 | |
CN103449440B (zh) | 制备多晶硅的设备 | |
CN115477305A (zh) | 一种乙硅烷及其制备方法 | |
CN103482630B (zh) | 制备多晶硅的方法 | |
CN111530472A (zh) | 一种钛基非均相胺化复合催化剂及其在生产液晶面板用n-甲基吡咯烷酮中的应用 | |
CN215609419U (zh) | 一种n-甲基二异丙醇胺连续化精馏装置 | |
CN106115719B (zh) | 氯硅烷精馏提纯过程中热量梯级利用的系统及方法 | |
CN221156582U (zh) | 一种乙硅烷合成系统 | |
CN110156026B (zh) | 一种多晶硅原料的提纯工艺 | |
CN103449447B (zh) | 制备三氯氢硅的设备 | |
CN221130998U (zh) | 一种利用三氯氢硅制备高纯硅烷气的装置 | |
CN103896716B (zh) | 一体化生产四氯乙烯、甲烷氯化物和三氯氢硅的方法 | |
CN117299007A (zh) | 一种乙硅烷合成系统及方法 | |
CN112624123B (zh) | 同时生产电子级硅烷、一氯硅烷、二氯硅烷的系统及方法 | |
CN217041368U (zh) | 一种多晶硅还原尾气多级冷凝汽提装置 | |
CN203498100U (zh) | 制备三氯氢硅的设备 | |
CN214880244U (zh) | 新型合成三氯氢硅的生产装置 | |
CN112758936A (zh) | 一种同时生产电子级硅烷和电子级一氯硅烷的系统和方法 | |
CN105948059B (zh) | 回收处理氯硅烷尾气的系统及方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Tao Gangyi Inventor before: Tao Gangyi Inventor before: Wang Jun |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 010400 Yidong Avenue North, industrial park, Shagedu Town, Zhungeer banner, Ordos City, Inner Mongolia Autonomous Region Patentee after: Inner Mongolia Xingyang Technology Co.,Ltd. Address before: 010400 north of Yidong Avenue, industrial park, Shagedu Town, Zhungeer banner, Ordos City, Inner Mongolia Autonomous Region Patentee before: INNER MONGOLIA XINGYANG TECHNOLOGY Co.,Ltd. |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A system for electrocatalytic synthesis of high-purity disilane Granted publication date: 20210928 Pledgee: Zhungeer Coal Field Rural Credit Cooperative Association Pledgor: Inner Mongolia Xingyang Technology Co.,Ltd. Registration number: Y2024150000097 |