CN112652943A - 垂直共振腔面射型激光装置 - Google Patents

垂直共振腔面射型激光装置 Download PDF

Info

Publication number
CN112652943A
CN112652943A CN201910954613.1A CN201910954613A CN112652943A CN 112652943 A CN112652943 A CN 112652943A CN 201910954613 A CN201910954613 A CN 201910954613A CN 112652943 A CN112652943 A CN 112652943A
Authority
CN
China
Prior art keywords
layer
type
semiconductor substrate
type bragg
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910954613.1A
Other languages
English (en)
Inventor
范纲维
林昱成
洪崇瑜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lextar Electronics Corp
Original Assignee
Lextar Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lextar Electronics Corp filed Critical Lextar Electronics Corp
Priority to CN201910954613.1A priority Critical patent/CN112652943A/zh
Priority to US16/799,796 priority patent/US20210111535A1/en
Publication of CN112652943A publication Critical patent/CN112652943A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/18325—Between active layer and substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

一种垂直共振腔面射型激光装置包含一半导体基材、一电流传导层、N型与P型布拉格反射层、主动发光层、电流限制层。N型布拉格反射层接触电流转换层。电流限制层位于主动发光层与P型布拉格反射层之间，电流限制层具有一电流限位孔。金属层具有一通孔对准电流限位孔。P型焊垫的一部分对准于电流限位孔与通孔。N型焊垫欧姆接触于电流转换层，P型、N型焊垫位于半导体基材的同一侧，金属层、P型焊垫与该N型焊垫各具有介于20微米到40微米之间的厚度，借以相对形成一应力释放系统。

Description

垂直共振腔面射型激光装置
技术领域
本发明是关于一种垂直共振腔面射型激光装置。
背景技术
垂直共振腔面射型激光装置在制作的过程中，比边射型激光装置多了许多优点。举例而言，垂直共振腔面射型激光可以在制造的任何过程中，测试其品质并且作问题处理，因为垂直共振腔面射型激光的激光是垂直于反应区射出。
然而，垂直共振腔面射型激光装置是大功率发光状置，若制造为厚度较薄的发光状置，需解决散热及以及可靠度的问题。
发明内容
本发明提出一种创新的垂直共振腔面射型激光装置，借以解决先前技术的问题。
于本发明的一实施例中，一种垂直共振腔面射型激光装置包含一半导体基材、一电流传导层、N型布拉格反射层、P型布拉格反射层、主动发光层、电流限制层。半导体基材具有介于50微米到150微米之间的厚度。电流传导层位于半导体基材上，且具有范围介于3E18到5E18之间的载子浓度。N型布拉格反射层接触电流转换层。P型布拉格反射层位于N型布拉格反射层上。主动发光层位于P型布拉格反射层与N型布拉格反射层之间。电流限制层位于主动发光层与P型布拉格反射层之间，电流限制层具有一电流限位孔。一金属层接触半导体基材，且半导体基材位于N型布拉格反射层与金属层之间，金属层具有一通孔对准电流限位孔。P型焊垫欧姆接触于P型布拉格反射层，且P型焊垫的一部分对准于电流限位孔与该通孔。N型焊垫欧姆接触于电流转换层且电性分离于P型焊垫，其中P型焊垫与N型焊垫位于半导体基材的同一侧，金属层、P型焊垫与该N型焊垫各具有介于20微米到40微米之间的厚度，借以相对形成一应力释放系统。
于本发明的一实施例中，半导体基材位于金属层与P型焊垫、N型焊垫之间。
于本发明的一实施例中，主动发光层包含量子井。
于本发明的一实施例中，垂直共振腔面射型激光装置还包含一金属接触层位于P型焊垫与P型布拉格反射层之间。
于本发明的一实施例中，垂直共振腔面射型激光装置还包含一金属接触层位于N型焊垫与电流传导层之间。
于本发明的一实施例中，垂直共振腔面射型激光装置还包含一抗反射层位于金属层与通孔的表面。
于本发明的一实施例中，电流传导层具有介于1.5微米到3微米之间的厚度。
于本发明的一实施例中，P型布拉格反射层于该半导体基材的投影面积小于N型布拉格反射层于半导体基材的投影面积。
于本发明的一实施例中，垂直共振腔面射型激光装置还包含一绝缘结构穿越P型布拉格反射层与主动发光层。
于本发明的一实施例中，垂直共振腔面射型激光装置还包含一绝缘结构穿越P型布拉格反射层、主动发光层以及N型布拉格反射层。
综上所述，本发明的垂直共振腔面射型激光装置通过缩减半导体基材至介于50微米到150微米之间的厚度，以缩减激光装置整体的厚度，且使金属层、P型焊垫与N型焊垫各具有介于20微米到40微米之间的厚度，借以相对形成一应力释放系统，使介于之间的这些层能应力平衡不会产生翘曲。
以下将以实施方式对上述的说明作详细的描述，并对本发明的技术方案提供更进一步的解释。
附图说明
为让本发明的上述和其他目的、特征、优点与实施例能更明显易懂，所附附图的说明如下：
图1是绘示依照本发明一实施例的一种垂直共振腔面射型激光装置的剖面示意图；以及
图2～图13绘示依照本发明一实施例的一种垂直共振腔面射型激光装置制造流程的多个步骤中的剖面图。
【符号说明】
为让本发明的上述和其他目的、特征、优点与实施例能更明显易懂，所附符号的说明如下：
100：垂直共振腔面射型激光装置
102：半导体基材
102a：半导体基材
104：N型布拉格反射层
105：主动发光层
106：P型布拉格反射层
107：电流限制层
107a：电流限位孔
108a：绝缘结构
108b：绝缘结构
109a：金属接触层
109b：金属接触层
110：焊垫种子层
110a：P型焊垫
110b：N型焊垫
112：金属层
112a：通孔
114：抗反射层
130：绝缘块
具体实施方式
为了使本发明的叙述更加详尽与完备，可参照所附的附图及以下所述各种实施例，附图中相同的号码代表相同或相似的元件。另一方面，众所周知的元件与步骤并未描述于实施例中，以避免对本发明造成不必要的限制。
请参照图1，其绘示绘示依照本发明一实施例的一种垂直共振腔面射型激光装置的剖面示意图。本案的垂直共振腔面射型激光装置100包含一半导体基材102a、一电流传导层116、一N型布拉格反射层104、一P型布拉格反射层106、一主动发光层105、一电流限制层107、一金属层112、一P型焊垫110a以及一N型焊垫110b。在本发明的实施例中，半导体基材102a被缩减而具有介于50微米到150微米之间的厚度，借以缩减激光装置整体的厚度，并增进散热效能。在本发明的实施例中，电流传导层116位于半导体基材上且接触N型布拉格反射层104，电流传导层具有范围介于3E18到5E18之间的载子浓度，借以作为N型焊垫110b与N型布拉格反射层104之间电流传导通道。主动发光层105位于P型布拉格反射层106与N型布拉格反射层104之间。电流限制层107位于主动发光层105与P型布拉格反射层106之间，电流限制层107具有一电流限位孔107a，借以限制电流从电流限位孔107a通过，使主动发光层105的发光区域主要集中于电流限位孔107a对准的区域，进而符合激光装置的发光需求。金属层112接触半导体基材102a，且半导体基材102a位于N型布拉格反射层104与金属层112之间，金属层112具有一通孔112a对准电流限位孔107a作为激光的出光位置。P型焊垫110a欧姆接触于P型布拉格反射层106，且P型焊垫110a的一部分对准于电流限位孔107a与通孔112a。N型焊垫110b欧姆接触于电流转换层116且电性分离于P型焊垫110a，且P型焊垫110a与N型焊垫110b位于半导体基材102a的同一侧。在本发明的实施例中，金属层112、P型焊垫110a与N型焊垫110b各具有介于20微米到40微米之间的厚度，借以相对形成一应力释放系统，使介于之间的这些层能应力平衡，不会产生翘曲。此外，金属层112、P型焊垫110a与N型焊垫110b的厚度均大于10微米亦可增加整体的散热效率。
在本发明的实施例中，金属层112的厚度大于10微米可增加导热及机械强度。
在本发明的实施例中，半导体基材102a位于金属层112与P、N型焊垫(110a、110b)之间。
在本发明的实施例中，主动发光层105可以是多层结构的量子井(MultipleQuantum Well,MQW)，但本发明的发光层的结构并不以为限。
在本发明的实施例中，垂直共振腔面射型激光装置还包含一金属接触层109a位于P型焊垫110a与P型布拉格反射层之间，作为欧姆接触的界面，但并不以此为限。
在本发明的实施例中，垂直共振腔面射型激光装置还包含一金属接触层109b位于N型焊垫110b与电流传导层116之间，作为欧姆接触的界面，但并不以此为限。
在本发明的实施例中，垂直共振腔面射型激光装置还包含一抗反射层114位于金属层112与通孔112a的表面，但仍不以此为限。
在本发明的实施例中，电流传导层116具有介于1.5微米到3微米之间的厚度，借以缩减激光装置整体的厚度，但仍不以此为限。
在本发明的实施例中，P型布拉格反射层106于半导体基材102a投影面积小于N型布拉格反射层104于半导体基材的投影面积102a，但不以此为限。
在本发明的实施例中，垂直共振腔面射型激光装置还包含一绝缘结构108a穿越P型布拉格反射层106与主动发光层105上的孔洞，但不以此为限。
在本发明的实施例中，垂直共振腔面射型激光装置还包含一绝缘结构108b穿越P型布拉格反射层106、主动发光层105以及N型布拉格反射层104上的孔洞，但不以此为限。
请参照图2～11，其分别绘示依照本发明一实施例的一种垂直共振腔面射型激光装置制造流程的多个步骤中的剖面图。
在图2的步骤中，在半导体基材102上依序形成电流传导层116、N型布拉格反射层104、主动发光层105与P型布拉格反射层106。
在图3的步骤中，形成一保护层120a(例如是氮化硅层)覆盖于P型布拉格反射层106的上表面。
在图4的步骤中，干蚀刻P型布拉格反射层106与主动发光层105以形成穿孔122a与穿孔122b。
在图5的步骤中，湿蚀刻N型布拉格反射层104，于穿孔122b内再形成穿孔124于N型布拉格反射层104上，借以裸露出电流传导层116。透过氧化制程于主动发光层105与P型布拉格反射层106的界面，另形成一电流限制层107其具有一电流限位孔107a。
在图6的步骤中，形成保护层120b覆盖这些穿孔，并于P型布拉格反射层106的上表面形成金属接触层109a。
在图7的步骤中，于电流传导层116的上表面形成金属接触层109b。
在图8的步骤中，在二穿孔内分别填入绝缘结构108a与绝缘结构108b，并裸露部份电流传导层116的上表面。
在图9的步骤中，形成焊垫种子层110接触金属接触层109a与金属接触层109b。
在图10的步骤中，先形成绝缘块130，接着在绝缘块130两侧藉焊垫种子层110电镀形成彼此分离的P型焊垫110a与N型焊垫110b。
在图11的步骤中，藉一蚀刻步骤移除绝缘块130。
在图12的步骤中，藉另一蚀刻步骤移除绝缘块130下方的部份焊垫种子层110，使P型焊垫110a与N型焊垫110b能彼此绝缘。P型焊垫110a接触金属接触层109a，而N型焊垫110b的延伸脚接触金属接触层109b。电流通道为P型焊垫110a经金属接触层109a至P型布拉格反射层106与主动发光层105。另一电流通道为N型焊垫110b经金属接触层109b、电流传导层116至N型布拉格反射层104与主动发光层105。
在图13的步骤中，半导体基材102a被缩减至介于50微米到150微米之间的厚度，且形成金属层112接触半导体基材102a，金属层112蚀刻出一通孔112a对准电流限位孔107a作为激光的出光位置。最后形成一抗反射层114位于金属层112与通孔112a的表面。
综上所述，本发明的垂直共振腔面射型激光装置通过缩减半导体基材至介于50微米到150微米之间的厚度，以缩减激光装置整体的厚度，且使金属层、P型焊垫与N型焊垫各具有介于20微米到40微米之间的厚度，借以相对形成一应力释放系统，使介于之间的这些层能应力平衡不会产生翘曲。
虽然本发明已以实施方式揭露如上，然其并非用以限定本发明，任何熟悉此技艺者，于不脱离本发明的精神和范围内，当可作各种的更动与润饰，因此本发明的保护范围当视所附的权利要求书所界定的范围为准。

Claims (10)

1.一种垂直共振腔面射型激光装置，其特征在于，包含：
一半导体基材，具有介于50微米到150微米之间的厚度；
一电流传导层位于该半导体基材上，该电流传导层具有范围介于3E18到5E18之间的载子浓度；
一N型布拉格反射层，接触该电流转换层；
一P型布拉格反射层，位于该N型布拉格反射层上；
一主动发光层，位于该P型布拉格反射层与该N型布拉格反射层之间：
一电流限制层，位于该主动发光层与该P型布拉格反射层之间，该电流限制层具有一电流限位孔；
一金属层，接触该半导体基材，且该半导体基材位于该N型布拉格反射层与该金属层之间，该金属层具有一通孔对准该电流限位孔；
一P型焊垫，欧姆接触于该P型布拉格反射层，且该P型焊垫的一部分对准于该电流限位孔与该通孔；以及
一N型焊垫，欧姆接触于该电流转换层且电性分离于该P型焊垫，其中该P型焊垫与该N型焊垫位于该半导体基材的同一侧，该金属层、该P型焊垫与该N型焊垫各具有介于20微米到40微米之间的厚度，借以相对形成一应力释放系统。
2.根据权利要求1所述的垂直共振腔面射型激光装置，其特征在于，该半导体基材位于该金属层与该P型焊垫、该N型焊垫之间。
3.根据权利要求1所述的垂直共振腔面射型激光装置，其特征在于，该主动发光层包含量子井。
4.根据权利要求1所述的垂直共振腔面射型激光装置，其特征在于，还包含一金属接触层位于该P型焊垫与该P型布拉格反射层之间。
5.根据权利要求1所述的垂直共振腔面射型激光装置，其特征在于，还包含一金属接触层位于该N型焊垫与该电流传导层之间。
6.根据权利要求1所述的垂直共振腔面射型激光装置，其特征在于，还包含一抗反射层位于该金属层与该通孔的表面。
7.根据权利要求1所述的垂直共振腔面射型激光装置，其特征在于，该电流传导层具有介于1.5微米到3微米之间的厚度。
8.根据权利要求1所述的垂直共振腔面射型激光装置，其特征在于，该P型布拉格反射层于该半导体基材的投影面积小于该N型布拉格反射层于该半导体基材的投影面积。
9.根据权利要求1所述的垂直共振腔面射型激光装置，其特征在于，还包含一绝缘结构穿越该P型布拉格反射层与该主动发光层。
10.根据权利要求1所述的垂直共振腔面射型激光装置，其特征在于，还包含一绝缘结构穿越该P型布拉格反射层、该主动发光层以及该N型布拉格反射层。
CN201910954613.1A 2019-10-09 2019-10-09 垂直共振腔面射型激光装置 Pending CN112652943A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201910954613.1A CN112652943A (zh) 2019-10-09 2019-10-09 垂直共振腔面射型激光装置
US16/799,796 US20210111535A1 (en) 2019-10-09 2020-02-24 Vertical cavity surface emitting laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910954613.1A CN112652943A (zh) 2019-10-09 2019-10-09 垂直共振腔面射型激光装置

Publications (1)

Publication Number Publication Date
CN112652943A true CN112652943A (zh) 2021-04-13

Family

ID=75342450

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910954613.1A Pending CN112652943A (zh) 2019-10-09 2019-10-09 垂直共振腔面射型激光装置

Country Status (2)

Country Link
US (1) US20210111535A1 (zh)
CN (1) CN112652943A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023168785A1 (en) * 2022-03-09 2023-09-14 Southern University Of Science And Technology Nano bessel laser beam emitter and method for manufacturing the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6947460B2 (en) * 2002-03-28 2005-09-20 Osram Gmbh Optically pumpable surface-emitting semiconductor laser device
US6979582B2 (en) * 2003-09-22 2005-12-27 National Chung-Hsing University Vertical-cavity surface emitting laser diode and method for producing the same
CN108141005A (zh) * 2015-07-30 2018-06-08 奥普蒂脉冲公司 刚性高功率和高速激光网格结构
CN109980501A (zh) * 2019-05-05 2019-07-05 厦门乾照半导体科技有限公司 一种垂直面射型的激光结构及制作方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6947460B2 (en) * 2002-03-28 2005-09-20 Osram Gmbh Optically pumpable surface-emitting semiconductor laser device
US6979582B2 (en) * 2003-09-22 2005-12-27 National Chung-Hsing University Vertical-cavity surface emitting laser diode and method for producing the same
CN108141005A (zh) * 2015-07-30 2018-06-08 奥普蒂脉冲公司 刚性高功率和高速激光网格结构
CN109980501A (zh) * 2019-05-05 2019-07-05 厦门乾照半导体科技有限公司 一种垂直面射型的激光结构及制作方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023168785A1 (en) * 2022-03-09 2023-09-14 Southern University Of Science And Technology Nano bessel laser beam emitter and method for manufacturing the same

Also Published As

Publication number Publication date
US20210111535A1 (en) 2021-04-15

Similar Documents

Publication Publication Date Title
KR101184775B1 (ko) 반도체 발광 소자 및 그 제조 방법
JP5465514B2 (ja) 光半導体装置
US9728934B2 (en) Back-side-emitting vertical cavity surface emitting laser (VCSEL) wafer bonded to a heat-dissipation wafer, devices and methods
JP2002368334A (ja) 面発光レーザ、フォトダイオード、それらの製造方法及びそれらを用いた光電気混載回路
KR101633164B1 (ko) 액세스가능한 전극을 구비하는 고체 상태 조명 디바이스 및 제조 방법
KR20090015430A (ko) 패드 재배열을 이용한 반도체 발광 다이오드 및 그의제조방법
US9780523B2 (en) Semiconductor laser device
JPWO2013150715A1 (ja) 半導体レーザ装置およびその製造方法
US20150063393A1 (en) Vertical cavity surface emitting laser
KR20160053138A (ko) 고효율 발광 장치
JPWO2007077740A1 (ja) 半導体光素子
KR20140121608A (ko) 발광 다이오드의 반사전극, 이를 포함하는 발광 다이오드 칩, 및 이들의 제조방법들
KR101635521B1 (ko) 반도체 발광소자
JP4136401B2 (ja) 面発光半導体レーザ素子及び光伝送システム
JP2009123939A (ja) 窒化物系半導体素子およびその製造方法
KR20150114110A (ko) 반도체 발광소자
CN112652943A (zh) 垂直共振腔面射型激光装置
JP5515685B2 (ja) 発光素子及びそれを用いた発光装置の製造方法
US20050190806A1 (en) Semiconductor laser and manufacturing method therefor
JP4908982B2 (ja) 半導体レーザ素子
JPH09213996A (ja) 半導体発光素子及びその製造方法
US8193552B2 (en) Semiconductor light emitting device of junction-down type and semiconductor light emitting element of junction-down type
JP2012054474A (ja) 半導体レーザ装置
CN114551675A (zh) 红光微型发光二极管芯片及其制备方法
JP2007173402A (ja) 半導体レーザ装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20210413

WD01 Invention patent application deemed withdrawn after publication