CN112652687A - Composite substrate and manufacturing method thereof - Google Patents

Composite substrate and manufacturing method thereof Download PDF

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Publication number
CN112652687A
CN112652687A CN202011528158.8A CN202011528158A CN112652687A CN 112652687 A CN112652687 A CN 112652687A CN 202011528158 A CN202011528158 A CN 202011528158A CN 112652687 A CN112652687 A CN 112652687A
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Prior art keywords
substrate
material filling
layer
heterogeneous material
base plate
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CN202011528158.8A
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Chinese (zh)
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不公告发明人
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Zhixin Semiconductor Hangzhou Co Ltd
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Zhixin Semiconductor Hangzhou Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

The invention provides a composite substrate, which belongs to the field of semiconductor devices and comprises a substrate base plate, wherein grooves are distributed on the substrate base plate in a staggered manner, heterogeneous material filling layers are filled in the grooves, and the upper surfaces of the heterogeneous material filling layers are lower than the upper surfaces of the substrate base plate; the substrate base plate and the heterogeneous material filling layer have different refractive indexes, and the refractive index of the heterogeneous material filling layer is less than 4. The invention also provides a manufacturing method of the composite substrate. The invention can improve the crystal quality of the epitaxial layer and reduce dislocation; meanwhile, the refractive index difference between the substrate and the epitaxial layer interface can be improved, the probability of light emergence is increased, the light extraction efficiency is ensured, and the brightness is improved.

Description

Composite substrate and manufacturing method thereof
Technical Field
The invention relates to a composite substrate and a manufacturing method thereof, belonging to the field of semiconductor devices.
Background
Third generation semiconductor materials based on gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN) and ternary and quaternary alloy materials thereof are preferred materials for optoelectronic devices such as GaN-based Light Emitting Diodes (LEDs), lasers, electronic power devices, etc. because their energy band widths can be continuously adjusted from 0.7eV to 6.2eV, and are all direct band gaps, and their excellent physical and chemical stability, high saturation electron mobility, etc. However, since GaN and AlN single crystal materials are very difficult to prepare, sapphire substrates are currently generally selected in view of their excellent properties and technical maturity. However, the difference between the lattice constant of sapphire and GaN material is about 15% and the difference between the lattice constant of AlN material is about 13.3%, resulting in poor quality of the nitride material crystal produced on the sapphire substrate, thereby affecting the lifetime and luminous efficiency of the device. The graphical sapphire substrate (PSS) technology is greatly popularized and applied in the epitaxial growth of the GaN-based LED, and shows a rapid development trend. Compared with the LED chip manufactured by adopting the plain sapphire substrate, the brightness of the LED chip corresponding to the PSS is improved by about 30%. PSS has become the mainstream substrate material for the LED industry.
Although the PSS can improve light output and epitaxial layer lattice quality, the preparation of the PSS is difficult and the cost is high due to the characteristics of large chemical bond energy and stable performance of the sapphire material. Meanwhile, when light enters the sapphire substrate from the active region, the light can be reflected and refracted at the interface of the sapphire substrate and the epitaxial layer, and the emergent efficiency of the light is lower for the LED chip which is arranged upright or inverted, so that the light extraction efficiency of the light-emitting diode is not favorably improved.
In order to improve the light extraction rate and the crystal quality of the epitaxial layer, a large number of researchers are actively developing substrates such as SiC, ZnO, and the like. However, the current progress is still slow due to the immaturity of the current technology and the problems with the above-mentioned substrates themselves. Therefore, how to improve the light extraction of the substrate in the prior art becomes a problem to be solved urgently.
Disclosure of Invention
In order to solve the technical problems, the invention provides a composite substrate which can improve the crystal quality of an epitaxial layer, reduce dislocation, improve the refractive index difference between a substrate of the substrate and an interface of the epitaxial layer, increase the probability of light emergence, ensure the extraction efficiency of light and further improve the brightness.
The invention is realized by the following technical scheme.
The invention provides a composite substrate, which comprises a substrate base plate and is characterized in that: grooves are distributed on the substrate in a staggered mode, heterogeneous material filling layers are filled in the grooves, and the upper surfaces of the heterogeneous material filling layers are lower than the upper surface of the substrate; the substrate base plate and the heterogeneous material filling layer have different refractive indexes, and the refractive index of the heterogeneous material filling layer is less than 4.
A nitride layer covers the substrate and the heterogeneous material filling layer; the thickness of the nitride layer covered on the substrate base plate is the same as that of the nitride layer covered on the heterogeneous material filling layer.
The heterogeneous material filling layer comprises at least two materials with different refractive indexes; the refractive index of the heterogeneous material filling layer is monotonously increased and decreased from bottom to top.
The height difference between the upper surface of the heterogeneous material filling layer and the upper surface of the substrate base plate is 5-200 nm.
Growing a layer of SiO2 on the substrate, making a groove penetrating through SiO2, filling the groove with a heterogeneous material filling layer, removing SiO2 on the upper surface of the substrate, and growing a nitride layer on the substrate and the heterogeneous material filling layer.
The grooves are made by plasma etching or laser cutting.
The SiO2 is removed by an etching solution.
The SiO2 was formed using a plasma enhanced chemical vapor deposition apparatus.
The nitride layer is AlN obtained by growth of trimethyl aluminum, hydrogen and ammonia gas.
The etching liquid is BOE solution or HF solution.
The invention has the beneficial effects that: the crystal quality of the epitaxial layer can be improved, and dislocation is reduced; meanwhile, the refractive index difference between the substrate and the epitaxial layer interface can be improved, the probability of light emergence is increased, the light extraction efficiency is ensured, and the brightness is improved.
Drawings
FIG. 1 is a schematic cross-sectional structure of the present invention;
fig. 2 is a top view of fig. 1.
In the figure: 101-substrate base plate, 102-heterogeneous material filling layer, 103-nitride layer.
Detailed Description
The technical solution of the present invention is further described below, but the scope of the claimed invention is not limited to the described.
A composite substrate as shown in fig. 1 and fig. 2 includes a substrate base plate 101, grooves are alternately distributed on the substrate base plate 101, heterogeneous material filling layers 102 are filled in the grooves, and the upper surface of the heterogeneous material filling layers 102 is lower than the upper surface of the substrate base plate 101; the substrate base plate 101 and the hetero material filling layer 102 have different refractive indexes and the hetero material filling layer 102 has a refractive index of less than 4.
The grooves are strip-shaped and are distributed in a vertical and horizontal grid mode.
The width of the groove is 10-1000 μm, and the depth is 10-200 μm.
A nitride layer 103 is covered on the substrate base plate 101 and the heterogeneous material filling layer 102; the nitride layer 103 overlying the substrate base plate 101 and the nitride layer 103 overlying the hetero-material fill layer 102 are the same thickness.
The heterogeneous material filling layer 102 comprises at least two materials with different refractive indexes; the refractive index of the heterogeneous material filling layer 102 monotonically increases and decreases from bottom to top.
The height difference between the upper surface of the heterogeneous material filling layer 102 and the upper surface of the substrate base plate 101 is 5-200 nm. The thickness of the nitride layer 103 is 5-100 nm.
A method for manufacturing a composite substrate comprises growing a layer of SiO on a substrate 1012To produce a through SiO2Filling the heterogeneous material filling layer 102 into the groove, and removing SiO on the upper surface of the substrate 1012A nitride layer 103 is grown on the base substrate 101 and the heterogeneous material filling layer 102.
The grooves are made by plasma etching or laser cutting.
The SiO2 is removed with an etching liquid.
Typically, the base substrate is selected from one of sapphire, silicon carbide, zinc oxide, glass, and metal. SiO22Is mainly used as a mask to facilitate the manufacture of grooves, SiO2The mask may be prepared by a Sol-Gel method (Sol-Gel), a plasma enhanced chemical vapor deposition method (PECVD), a physical vapor deposition method (CVD), or the like.
Before filling the grooves, the substrate should be cleaned and then filled by deposition using physical vapor deposition or chemical vapor deposition.
The material of the filling layer 102 can be selected from oxide, nitride, fluoride, glass, simple substance, etc.
In-situ SiO removal using etching solutions2When masking, the filling layer deposited on the substrate except the groove will follow the SiO2And removing the mask. Generally, the etching solution is preferably a Buffered Oxide (BOE) solution or a hydrofluoric acid (HF) solution.
The growth device of the nitride layer 103 is selected from one of Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE) or Hydride Vapor Phase Epitaxy (HVPE), and the nitride may be selected from one or more of GaN, AlN and AlGaN.
Example 1
By adopting the scheme, the preparation method specifically comprises the following steps:
1. placing the sapphire substrate into a plasma enhanced chemical vapor deposition device, controlling process conditions, introducing silane and carbon dioxide gas, and forming a layer of SiO with the thickness of 100nm on the sapphire surface2Masking;
2. will grow SiO2The sapphire substrate of the mask is placed on a laser cutting machine for cutting, and M vertically staggered grooves are formed in the surface of the sapphire substrate. The grooves had a width of 100 μm and a depth of 50 μm.
3. And cleaning the sapphire substrate by using a cleaning machine to remove impurities in the groove.
4. Putting the cleaned substrate into physical vapor deposition equipment, controlling process conditions, and growing a layer of SiO with the thickness of 40 mu m2And (3) heterogeneous filling layer, and then controlling the process conditions to grow a magnesium fluoride filling layer with the thickness of 9.8 μm.
5. Taking out the substrate with the grown filling layer, soaking the substrate in HF solution for 5-10 minutes, and removing SiO on the surface of the substrate2And (5) masking.
6. And putting the substrate into a reaction chamber of metal organic chemical vapor deposition equipment, controlling the temperature of the reaction chamber to be 750 ℃ and the pressure to be 400mbar, and introducing trimethyl gallium, nitrogen and hydrogen simultaneously to grow the GaN with the thickness of 100 nm.
Example 2
By adopting the scheme, the preparation method specifically comprises the following steps:
1. placing the sapphire substrate into a plasma enhanced chemical vapor deposition device, controlling process conditions, introducing silane and carbon dioxide gas, and forming a layer of SiO with the thickness of 100nm on the sapphire surface2Masking;
2. will grow SiO2The sapphire substrate of the mask is placed on a laser cutting machine for cutting, and M vertically staggered grooves are formed in the surface of the sapphire substrate. The grooves had a width of 100 μm and a depth of 50 μm.
3. And cleaning the sapphire substrate by using a cleaning machine to remove impurities in the groove.
4. Putting the cleaned substrate into physical vapor deposition equipment, controlling process conditions, and growing a layer of SiO with the thickness of 40 mu m2Heterogeneous filling layer, and growing a layer of magnesium fluoride (MgF) with thickness of 9.8 μm under controlled process conditions2) And (5) filling the layer.
5. Taking out the substrate with the grown filling layer, soaking the substrate in HF solution for 5-10 minutes, and removing SiO on the surface of the substrate2And (5) masking.
6. Putting the substrate into a reaction chamber of metal organic chemical vapor deposition equipment, controlling the temperature of the reaction chamber to be 750 ℃ and the pressure to be 400mbar, and introducing trimethyl gallium, nitrogen, hydrogen and ammonia gas simultaneously to grow the GaN with the thickness of 50 nm;
7. and raising the temperature to 1150 ℃, controlling the pressure of the reaction chamber to be 100mbar, and introducing trimethyl aluminum, hydrogen and ammonia gas simultaneously to grow the AlN with the thickness of 50 nm.
Example 3
By adopting the scheme, the preparation method specifically comprises the following steps:
1. placing the sapphire substrate into a plasma enhanced chemical vapor deposition device, controlling process conditions, introducing silane and carbon dioxide gas, and forming a layer of SiO with the thickness of 100nm on the sapphire surface2Masking;
2. will grow SiO2Placing the sapphire substrate of the mask on a laser cutting machine for cutting to obtain a surface shapeIs composed of M vertically staggered grooves. The grooves had a width of 100 μm and a depth of 30 μm.
3. And cleaning the sapphire substrate by using a cleaning machine to remove impurities in the groove.
4. Putting the cleaned substrate into physical vapor deposition equipment, controlling process conditions, growing a zinc oxide (ZnO) heterogeneous filling layer with the thickness of 25 mu m, and then controlling process conditions to grow a titanium dioxide (TiO) heterogeneous filling layer with the thickness of 4.7 mu m2) And (5) filling the layer.
5. Taking out the substrate with the grown filling layer, soaking the substrate in BOE solution for 5-10 minutes, and removing SiO on the surface of the substrate2And (5) masking.
6. And putting the substrate into a reaction chamber of metal organic chemical vapor deposition equipment, raising the temperature to 1150 ℃, controlling the pressure of the reaction chamber to be 100mbar, and introducing trimethyl aluminum, hydrogen and ammonia gas to grow AlN with the thickness of 100 nm.
Example 4
By adopting the scheme, the preparation method specifically comprises the following steps:
1. placing the sapphire substrate into a plasma enhanced chemical vapor deposition device, controlling process conditions, introducing silane and carbon dioxide gas, and forming a layer of SiO with the thickness of 100nm on the sapphire surface2Masking;
2. will grow SiO2The sapphire substrate of the mask is placed on a laser cutting machine for cutting, and M vertically staggered grooves are formed in the surface of the sapphire substrate. The grooves had a width of 100 μm and a depth of 30 μm.
3. And cleaning the sapphire substrate by using a cleaning machine to remove impurities in the groove.
4. Putting the cleaned substrate into physical vapor deposition equipment, controlling process conditions, growing a zinc oxide (ZnO) heterogeneous filling layer with the thickness of 25 mu m, and then controlling process conditions to grow a titanium dioxide (TiO) heterogeneous filling layer with the thickness of 4.7 mu m2) And (5) filling the layer.
5. Taking out the substrate with the grown filling layer, soaking the substrate in BOE solution for 5-10 minutes, and removing SiO on the surface of the substrate2And (5) masking.
6. Putting the substrate into a reaction chamber of metal organic chemical vapor deposition equipment, raising the temperature to 1150 ℃, controlling the pressure of the reaction chamber to be 100mbar, and introducing trimethyl aluminum, hydrogen and ammonia gas simultaneously to grow AlN with the thickness of 50 nm;
7. and raising the temperature to 1150 ℃, controlling the pressure of the reaction chamber to be 100mbar, and introducing trimethyl aluminum, hydrogen and ammonia gas simultaneously to grow AlGaN with the thickness of 50 nm.

Claims (10)

1. A composite substrate comprising a substrate base plate (101), characterized in that: grooves are distributed on the substrate (101) in a staggered mode, the grooves are filled with the heterogeneous material filling layers (102), and the upper surfaces of the heterogeneous material filling layers (102) are lower than the upper surface of the substrate (101); the refractive indexes of the substrate base plate (101) and the heterogeneous material filling layer (102) are different, and the refractive index of the heterogeneous material filling layer (102) is less than 4.
2. The composite substrate of claim 1, wherein: a nitride layer (103) is covered on the substrate base plate (101) and the heterogeneous material filling layer (102); the thickness of the nitride layer (103) covered on the substrate base plate (101) is the same as that of the nitride layer (103) covered on the heterogeneous material filling layer (102).
3. The composite substrate of claim 1, wherein: the heterogeneous material filling layer (102) comprises at least two materials with different refractive indexes; the refractive index of the heterogeneous material filling layer (102) is monotonously increased and decreased from bottom to top.
4. The composite substrate of claim 1, wherein: the height difference between the upper surface of the heterogeneous material filling layer (102) and the upper surface of the substrate base plate (101) is 5-200 nm.
5. A method of manufacturing a composite substrate, characterized by: growing a layer of SiO on a substrate (101)2To produce a through SiO2Filling the groove with a filling layer (102) of a foreign material, and removing SiO on the upper surface of the substrate (101)2Growing nitride on the substrate (101) and the heterogeneous material filling layer (102)A layer (103).
6. The composite substrate manufacturing method according to claim 5, wherein: the grooves are made by plasma etching or laser cutting.
7. The composite substrate manufacturing method according to claim 5, wherein: the SiO2And removing the silicon carbide substrate by using etching liquid.
8. The composite substrate manufacturing method according to claim 5, wherein: the SiO2Formed by using a plasma enhanced chemical vapor deposition device.
9. The composite substrate manufacturing method according to claim 5, wherein: the nitride layer (103) is AlN grown using trimethylaluminum, hydrogen and ammonia.
10. A method of manufacturing a composite substrate according to claim 7, wherein: the etching liquid is BOE solution or HF solution.
CN202011528158.8A 2020-12-22 2020-12-22 Composite substrate and manufacturing method thereof Pending CN112652687A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113445004A (en) * 2021-08-30 2021-09-28 至芯半导体(杭州)有限公司 AlN thin film and preparation method and application thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101330002A (en) * 2007-06-20 2008-12-24 中国科学院半导体研究所 Method for preparing graphical sapphire substrate for nitrifier epitaxial growth
KR20120084841A (en) * 2011-01-21 2012-07-31 서울옵토디바이스주식회사 Light emitting diode device and method of fabricating the same
KR20130015770A (en) * 2011-08-05 2013-02-14 서울옵토디바이스주식회사 A light emitting diode chip and method for fabricating the same
CN103887383A (en) * 2012-12-21 2014-06-25 三星电子株式会社 Semiconductor Light Emitting Device And Method Of Manufacturing The Same
CN106463574A (en) * 2014-05-30 2017-02-22 皇家飞利浦有限公司 Light-emitting device with patterned substrate
CN211125684U (en) * 2019-10-08 2020-07-28 东莞市中图半导体科技有限公司 Patterned composite substrate and L ED epitaxial wafer

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101330002A (en) * 2007-06-20 2008-12-24 中国科学院半导体研究所 Method for preparing graphical sapphire substrate for nitrifier epitaxial growth
KR20120084841A (en) * 2011-01-21 2012-07-31 서울옵토디바이스주식회사 Light emitting diode device and method of fabricating the same
KR20130015770A (en) * 2011-08-05 2013-02-14 서울옵토디바이스주식회사 A light emitting diode chip and method for fabricating the same
CN103887383A (en) * 2012-12-21 2014-06-25 三星电子株式会社 Semiconductor Light Emitting Device And Method Of Manufacturing The Same
CN106463574A (en) * 2014-05-30 2017-02-22 皇家飞利浦有限公司 Light-emitting device with patterned substrate
CN211125684U (en) * 2019-10-08 2020-07-28 东莞市中图半导体科技有限公司 Patterned composite substrate and L ED epitaxial wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113445004A (en) * 2021-08-30 2021-09-28 至芯半导体(杭州)有限公司 AlN thin film and preparation method and application thereof

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Application publication date: 20210413