CN1801498A - Method for preparing LED chip with separate crystal grain vertical structure - Google Patents

Method for preparing LED chip with separate crystal grain vertical structure Download PDF

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CN1801498A
CN1801498A CNA2005100111359A CN200510011135A CN1801498A CN 1801498 A CN1801498 A CN 1801498A CN A2005100111359 A CNA2005100111359 A CN A2005100111359A CN 200510011135 A CN200510011135 A CN 200510011135A CN 1801498 A CN1801498 A CN 1801498A
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led
growth
gan
island
epitaxial
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CN100389503C (en
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于彤军
秦志新
杨志坚
胡晓东
陈志忠
祁山
陆羽
康香宁
商淑萍
童玉珍
丁晓民
张国义
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北京大学
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Abstract

The invention presents a tube core shape design with high luminous efficiency, which comprises: epitaxial growing on island area LED chip with discrete grain; after laser peeling, packaging discrete chip into LED with vertical structure and high luminous efficiency. Wherein, the epitaxial growth improves crystal quality and internal quantum efficiency; the shape of island area increases LED light power; the island growth benefits to release stress, reduce stress on interface between GaN and sapphire substrate and the damage and spectral shift during peeling, thereby, it can obtain LED with high performance.

Description

分立晶粒垂直结构的LED芯片制备方法 Grain discrete LED chip production method of a vertical structure

技术领域 FIELD

本项发明属于光电技术领域,具体涉及结合金属有机物化学汽相淀积(MOCVD)外延生长技术、激光剥离和倒封装技术的一种功率型半导体发光二极管(LED)芯片的制备方法。 The present invention belongs to item photovoltaic technologies, and particularly relates to binding metal organic chemical vapor deposition (MOCVD) epitaxial growth techniques, laser lift-off method for preparing a packaging technology and reverse power type semiconductor light emitting diode (LED) chips. 本发明提出一种通过生长直接获得分立晶粒LED芯片的方法,提供LED芯片的几何图形设计不受LED芯片后工艺限制的新途径,适用于获得新型、大功率LED的制备。 The present invention proposes a method of growing directly obtained by the discrete grains of the LED chip, a new route from process limitations to provide the LED chip geometry LED chip design for new, high-power LED preparation obtained.

背景技术 Background technique

通常,LED是在衬底上外延生长获得的,因而,LED的制备受到衬底晶体的晶格结构的制约。 Typically, LED epitaxial growth on a substrate is obtained, and thus, an LED prepared restricted crystal lattice structure of the substrate. 晶格失配、热膨胀系数的差异,使外延生长阶段的芯片外延层中应力积累和释放而产生大量的位错,特别对蓝宝石衬底上GaN基LED外延层来说,位错密度高达1011/cm2,从根本上制约了LED功率的进一步提高。 Lattice mismatch difference in coefficient of thermal expansion of the stress accumulation and release phase epitaxial growth of epitaxial layer chip generates a large amount of dislocations, in particular for GaN-based LED epitaxial layer on a sapphire substrate, the dislocation density of up to 1011 / cm2, restricted the further improvement of LED power fundamentally. 在光导出方面,由于半导体折射率的与空气折射率差,抑制了光从半导体出射的效率,以及出光面的半导体材料吸收和金属电极层的吸收也不可忽视。 In the light out, since the semiconductor and air refractive index difference is suppressed from the semiconductor light emission efficiency, and a semiconductor material and the surface of the absorbent layer is absorbed by the metal electrode can not be ignored. 另外,衬底的散热问题也大大地影响着功率型LED的特性。 Further, the heat dissipation problem of the substrate greatly influences the characteristics of power LED. 以上三方面成为影响功率型半导体LED芯片光功率主要因素。 An impact on the above three aspects of power-type LED chip semiconductor light power factors.

芯片制备的后工艺——划片裂片得到的LED形状和成品率,也普遍受衬底上晶体结构的影响。 After the process for preparing the chip - LED scribing lobes shape and yield obtained, are generally affected by the crystal structure of the substrate. 对蓝宝石衬底上GaN基器件来说,更是由于蓝宝石的解理面与GaN外延层解理面不同而限制了芯片的形状,使有利于出光的管芯几何图形设计受到制约。 Sapphire substrate for GaN-based devices, it is due to different cleavage plane sapphire and GaN epitaxial layer is limited cleavage plane shape of the chip, so that the light dies in favor restricted geometric design. 另外,使用难于加工的衬底,增加了芯片制备的成本。 Further, use of the substrate are difficult to process, increases the cost of preparing chips.

目前,有很多报道降低外延层中位错密度,提高晶体质量的研究结果,主要为选择侧向外延生长技术(LEO)和过渡层生长技术。 Currently, there are many reports to reduce the dislocation density in the epitaxial layer, to improve the crystal quality of the results of research, mainly the lateral epitaxial growth techniques for the selection (LEO) and buffer layer growth techniques. 日本的中村修二等人采用侧向外延技术将源于衬底的贯穿位错密度降低了两个数量级,日本KazuyukiTadatomo等人图形化衬底上生长的LED外延层制备LED研究报道,位错密度降低为常规生长外延片的三分之一,而LED光功率提高近五倍,外量子效率达24%;日本名城大学赤崎勇研究组的M.Iwaya等人报道低温AlN插入层使张应力得到释放,获得了外延片上与位错对应的暗点密度降低到2×107cm-2的好结果;T.Wang等人和CCYang等报道的多种缓冲层结构也给出了与位错对应的腐蚀坑密度达到106cm-2数量级的结果表明晶体质量显著提高,并获得紫外光发光二极管(UVLED)功率大幅提高的良好结果。 Nakamura in Japan who adopt second lateral epitaxy substrate from the threading dislocation density is reduced two orders of magnitude, LED grown on a prepared substrate LED epitaxial layer studies reported graphically Japan KazuyukiTadatomo et al, reducing the dislocation density one third of the regular growth of the epitaxial film, and the LED light power is increased nearly five times, the external quantum efficiency of 24%; M.Iwaya Isamu Akasaki et Japanese city university research groups have reported that the low temperature AlN interlayer tensile stress to be released , an epitaxial wafer is obtained on reducing dislocation density of dark spots corresponding to the good results of 2 × 107cm-2; a plurality of buffer layer structure T.Wang CCYang et al and reported also gives the etch pits corresponding to dislocations and density of 106cm-2 order of magnitude of results showed significantly improved crystal quality, and good results are obtained ultraviolet light emitting diode (the UVLED) a substantial increase in power.

对于GaN基材料的异质生长来说,虽然侧向外延生长技术(LEO)和过渡层生长技术能够改善晶体质量的机理还有许多不清楚的地方,但不能排除生长过程中应力的变化是一个重要因素。 For growth of the GaN heterostructure based material, the lateral epitaxial growth techniques, although the mechanism (LEO) and the buffer layer growth technique capable of improving the crystal quality there are many unclear, but the change can not be excluded growth process is a stress Key factor.

采用激光剥离技术,剥离蓝宝石衬底,制备垂直电极结构的GaN基LED,已经成为一个值得关注的发展方向。 Laser lift-off technique, the sapphire substrate, a vertical electrode structure prepared in the LED GaN-based, has become a concern direction. 日本日亚公司和德国的Osram公司已经推出该技术的相关设备。 Nichia Corporation of Japan and Germany's Osram has introduced the technology related equipment. 同时,倒封装结构的LED,由于避免了P电极和P-GaN吸收,利用并且折射率低于GaN的蓝宝石面出光,已经证明能够使光功率明显提高,即使不剥离蓝宝石衬底,也能够大幅提高光功率1.5倍以上,美国LumiledsLighting的JJWierer等报告的结果以及Daniel Steigerwald等提出的专利US6573537 B1表明倒装芯片出光效率提高1.6倍。 Meanwhile, the LED package structure inverted, since the electrode is avoided and P P-GaN absorption, and the use of lower refractive index than the light plane sapphire GaN, has proved capable of significantly improving the optical power, without peeling the sapphire substrate, it is possible to significantly increase the optical power of more than 1.5 times, the results of the United States LumiledsLighting JJWierer reports and the like proposed by Daniel Steigerwald Patent US6573537 B1 showed 1.6 fold improved flip-chip light-emitting efficiency.

我国台湾的JTShu等进行了HVPE岛状选择生长LED的方法,观察到岛状生长区域的腐蚀坑密度(EPD)为1-5×107cm-2,说明岛状外延生长获得了很好的晶体质量,同时将LED外形做成六边形,使得LED的光功率为常规的非岛状生长的方型LED的两倍。 Taiwan HVPE JTShu of the island-like LED selective growth method, was observed etch pit density (EPD) island growth area is 1-5 × 107cm-2, island-described epitaxial growth to obtain a good crystal quality while the LED made of hexagonal shape, such as a conventional LED optical power of the non-square island growth twice the LED.

因此,运用改善晶体质量的生长方法、结合倒封装、垂直结构LED的制备,是提高LED光功率的主要方向。 Thus, using a method for improving crystal quality growth, combined inverted package, the vertical structure LED is prepared, to improve the main direction of the LED light power.

本项发明在上述研究基础上,提出一种不同的改变外延生长过程中应力分布以降低位错密度提高晶体质量,即MOCVD岛状生长,结合高出光效率的管芯形状设计和激光剥离技术,获得大功率LED芯片的简单、有效的新方法。 The present invention of the basis of these studies, we propose a different change in the stress distribution in an epitaxial growth process to reduce the dislocation density to improve the crystal quality, i.e., island growth MOCVD, combined die and shaped to laser lift higher optical efficiency is obtained high power LED chip simple, effective method.

发明内容 SUMMARY

本发明的目的是提出一种结合高出光效率的管芯形状设计,通过岛状区域LED外延生长,生长分立晶粒LED芯片,激光剥离后将分立的LED芯片封装成上下电极的垂直结构的、具有较高光功率的LED的制备方法。 Object of the present invention is to propose a higher binding efficiency of light shaped to a die, island regions LED epitaxial growth, grain growth discrete LED chip after laser lift-off LED chip packages into discrete upper and lower electrodes of the vertical structure, the method of preparing an LED having a high optical power.

分立晶粒LED外延层,在岛状区域外延生长过程中,由于应力分布的改善,外延层中位错密度减少,晶体质量提高,从而提高了LED内量子效率。 Discrete grains LED epitaxial layer island regions in the epitaxial growth process, due to the improved stress distribution, the epitaxial layer reduces the dislocation density, to improve the crystal quality, thereby improving the quantum efficiency of the LED.

设计岛状区域的形状,使生长获得的晶粒几何形状为适合光导出的多边形、圆形,提高LED的光功率。 Design of the shape of the island regions, the growth of crystal grains obtained by the geometric shape suitable light derived polygon, circle, improved optical power LED.

由于岛状区域生长有利于应力的释放,在激光剥离过程中降低GaN和蓝宝石衬底界面处由于激光辐照而产生的应力,减少剥离过程中的损伤,减少剥离前后LED的发光光谱因应力变化而发生移动,以保证剥离衬底而获得高性能的LED。 Since the island regions growth conducive to the release of the stress, reducing the stress at the interface of GaN and the sapphire substrate by the laser radiation generated in the laser stripping process, to reduce the damage of the stripping process, reducing the LED emission spectra before and after peeling due to the stress variation and moved to ensure separation substrate obtained by high-performance LED.

传统LED制备方法是MOCVD外延生长、电极制备、外延片减薄、分割获得芯片。 LED conventional MOCVD epitaxial growth is prepared, preparing an electrode, wafer thinning, chips obtained by the division. 本发明则在外延生长时即获得分立的LED晶粒,只需激光剥离去除衬底和电极制备,即可获得LED芯片,无需减薄、分割等工艺过程,即可获得LED芯片,与常规LED工艺相比,减少了后工艺,降低了成本。 The present invention is obtained when the epitaxially grown i.e. discrete LED dies, and preparing an electrode substrate laser lift-off removal only, to obtain an LED chip, no thinning, splitting and other processes, to obtain an LED chip, and a conventional LED compared process, after the reduction process and reduce costs.

本发明提出的岛状区域外延生长获得分立晶粒的垂直结构LED的方法,工艺过程简单,易于实现,是提高发光二极管效率的有效途径。 The method proposed by the present invention is obtained epitaxial island regions discrete vertical structure LED die, the process is simple, easy to implement, is an effective way to improve the efficiency of a light emitting diode.

该方法由于结合了激光剥离技术剥离蓝宝石衬底,制备成垂直结构的LED芯片,而且芯片的形状设计为圆形和多边形,因而与JTShu等报道的岛状生长获得的LED芯片方法有着显著的不同。 Since this method combines the laser lift the sapphire substrate to prepare a vertical structure LED chip, and the chip is shaped to circular and polygonal, island-like manner and thus the LED chips reported JTShu like growth obtained with significantly different .

本发明的分立晶粒垂直结构发光二极管的制备方法有以下几个要点:1.在岛状区域外延生长分立晶粒LED外延层,区别于常规的整片生长和侧向外延生长,将生长限制在芯片尺度的一定区域内。 Preparation of discrete grains of the present invention is a vertical structure light emitting diode has the following points: 1. LED epitaxial grains discrete island regions in the epitaxial layer, different from a conventional whole piece and lateral epitaxial growth, the growth-limiting in a certain area of ​​the chip scale.

2.生长过程中应力分布改善,可以生长比较厚的外延层,外延层中位错密度减少,晶体质量提高。 2. The improved distribution of stress during growth can be grown relatively thick epitaxial layer, the epitaxial layer reduces the dislocation density, the crystal quality.

3.在激光剥离过程中,岛状区域生长可以降低GaN和蓝宝石衬底界面处由于激光辐照而产生的应力,减少剥离过程中的损伤,减少剥离前后LED的发光光谱因应力变化而发生移动,以保证剥离衬底而获得高性能的LED。 3. In the laser lift-off process, the island-shaped region growing stress can be reduced at the interface of GaN and sapphire substrate due to the generated laser irradiation, to reduce the damage of the stripping process, reducing the LED emission spectra due to stress change before and after the release moved to ensure high performance and peeling an LED substrate.

4.岛状区域的几何图形为适合光从管芯导出的多边形和圆形,从而实现了通过生长控制管芯形状和尺寸,越过了后工艺加工获得多边形和圆形管芯的困难,为管芯制备提供了一条新的途径。 4. The geometry of the island regions derived from the light suitable polygonal and circular die, thereby realizing the difficulties to obtain polygons, and circles crafting dies after growth by controlling the shape and size of the die, crossed, a tube preparing the core provides a new way.

5.在外延生长时即获得分立的LED晶粒,只需激光剥离去除衬底和电极制备即可获得LED芯片,无需对蓝宝石或GaN减薄、分割等工艺过程,即可获得LED芯片,与常规LED工艺相比,减少了后工艺的花费,降低了成本。 5. When epitaxial growth is obtained i.e. discrete LED dies, laser lift-off prepared simply removing the substrate and the electrode to obtain an LED chip without a sapphire or GaN thinning, splitting and other processes, to obtain an LED chip, and compared with the conventional LED technology, reducing the cost of the process and reduce costs.

根据本发明的分立晶粒垂直结构发光二极管的制备方法,具体技术方案有两种,下面详细说明各个技术方案的具体步骤:分立晶粒垂直结构的发光二极管芯片发光二极管的制备方法一,具体步骤如下:1.在蓝宝石衬底上淀积SiO2,并刻蚀SiO2以限定岛状生长区域和几何形状。 The preparation method of the present invention is a discrete grains vertical structure light emitting diode, two specific aspect, the specific steps of the various aspect of the detailed description below: Preparation of discrete LED chip light emitting diode die a vertical structure, specific steps as follows: 1 SiO2 is deposited on a sapphire substrate, and SiO2 is etched to define a growth area and the island-shaped geometry. 将生长区的几何形状设计为有利于光导出多边形和圆形。 The growth zone geometry is designed to facilitate light derived polygons, and circles.

2.在带有SiO2图形的衬底上依次生长n型GaN、LED有源层、p型GaN;外延片还要进行常规的P型激活退火。 2. SiO2 grown on the substrate with a pattern of sequentially an n-type GaN, LED active layer, p-type the GaN; epitaxial wafer also conventional activation anneal of the P-type.

3.在p-GaN上制备电极和反射层,电极金属要能够获得良好欧姆接触,同时还要考虑到与起反射镜面作用的反射层金属有良好的粘附作用,淀积之后要经过合金而获得与p-GaN间的欧姆接触;反射层金属的选择为反射率高、稳定性好、与欧姆接触层金属有良好的粘附性,对欧姆接触无不良影响的金属。 3. After the reflective layer and the electrode prepared on the p-GaN, the electrode metal to be able to obtain a good ohmic contact, while also taking into account the effect of specular reflection from a reflective metal layer has a good adhesion, deposited alloy to go through obtaining ohmic contact between the p-GaN; selective reflective layer is a metal having high reflectance, good stability, the ohmic contact layer has good adhesion to metal, ohmic contact metal does not adversely affect.

4.将上述带有P电极LED外延片键合在Si或Cu支撑衬底上,放置在真空室中抽走胶中气泡,保证岛状生长层与支撑衬底表面均匀无空洞的紧密接触,支撑衬底加工成具有诱导裂片功能的图形。 4. P with the above-described electrodes of the LED chip bonding in an epitaxial Si or Cu is supported on a substrate placed in a vacuum chamber pumped bubble gum, to ensure a uniform void-free intimate contact island growth layer and the support substrate surface, supporting a substrate processed to have the function of inducing pattern lobes.

5.激光剥离去除难于加工的蓝宝石衬底。 The laser lift-off removal of sapphire substrates are difficult to process. 由于GaN与蓝宝石衬底结合部分少,激光剥离中可以采用较低能量的激光束,减少了在剥离过程对界面处晶体的损伤。 Since the GaN and the sapphire substrate binding least partially, laser lift-off using a laser beam may be lower energy, reducing the damage to the crystal at the interface of the stripping process. 剥离完成后,需要去除外延层表面的金属Ga。 After stripping is completed, the need to remove the metal Ga surface of the epitaxial layer.

6.在n-GaN面上完成n电极制备;由于出光面的要求,n电极要尽量占有较小的面积,通常在保证焊线的最低要求尺度上设计电极尺寸。 6. Preparation of n-electrode in the n-GaN surface is completed; because of the required surface, the n-electrode occupy a smaller area as far as possible, generally designed to ensure a minimum required size of the electrode wire bonding on the scale.

7.分离岛状生长区域为垂直电极结构的LED芯片。 7. The isolated island growth region vertical electrode structure of the LED chip.

分立晶粒垂直结构的发光二极管芯片发光二极管的制备方法二,具体步骤如下:1.在蓝宝石衬底上淀积SiO2,并刻蚀SiO2以限定岛状生长区域和几何形状。 The method of preparing discrete LED chip light emitting diode die two vertical structure, the following steps: 1 SiO2 is deposited on a sapphire substrate, and SiO2 is etched to define a growth area and the island-shaped geometry. 将生长区的几何形状设计为有利于光导出多边形和圆形。 The growth zone geometry is designed to facilitate light derived polygons, and circles.

2.在蓝宝石衬底上运用氢化物气相外延(HVPE)技术生长厚n-GaN外延层。 2. The use of hydride vapor phase epitaxy (HVPE) technique growing a thick n-GaN epitaxial layer on a sapphire substrate.

3.在带有厚n-GaN岛状生长层的衬底上运用MOCVD技术二次生长Si掺杂GaN、LED有源层、p型GaN,外延片还要进行常规的P型激活退火。 3. The use of MOCVD on a substrate having a thickness of island-grown n-GaN layer grown Si-doped second GaN, the LED active layer, p-type GaN, epitaxial wafer also conventional activation anneal of the P-type.

4.在p-GaN上制备电极和反射层,电极金属要能够获得良好欧姆接触,同时还要考虑到与起反射镜面作用的反射层金属有良好的粘附作用,淀积之后要经过合金而获得与p-GaN间的欧姆接触;反射层金属的选择为反射率高、稳定性好、与欧姆接触层金属有良好的粘附性,对欧姆接触无不良影响的金属。 4. After preparation of the electrode and the reflective layer on the p-GaN, the electrode metal to be able to obtain a good ohmic contact, while also taking into account the reflective layer from a metal mirror acting with good adhesion, deposited alloy to go through obtaining ohmic contact between the p-GaN; selective reflective layer is a metal having high reflectance, good stability, the ohmic contact layer has good adhesion to metal, ohmic contact metal does not adversely affect.

5.将上述带有P电极LED外延片键合在Si或Cu支撑衬底上,放置在真空室中抽走胶中气泡,保证岛状生长层与支撑衬底表面均匀无空洞的紧密接触,支撑衬底加工成具有诱导裂片功能的图形。 5. P with the above-described electrodes of the LED chip bonding in an epitaxial Si or Cu is supported on a substrate placed in a vacuum chamber pumped bubble gum, island growth to ensure that the substrate layer and the support a uniform void-free surface in intimate contact, supporting a substrate processed to have the function of inducing pattern lobes.

6.激光剥离去除难于加工的蓝宝石衬底。 6. The laser lift-off removal of sapphire substrates are difficult to process. 由于GaN与蓝宝石衬底结合部分少,激光剥离中可以采用较低能量的激光束,减少了在剥离过程对界面处晶体的损伤。 Since the GaN and the sapphire substrate binding least partially, laser lift-off using a laser beam may be lower energy, reducing the damage to the crystal at the interface of the stripping process. 剥离完成后,需要去除外延层表面的金属Ga。 After stripping is completed, the need to remove the metal Ga surface of the epitaxial layer.

7.在n-GaN面上完成n电极制备,由于出光面的要求,n电极要尽量占有较小的面积,通常在保证焊线的最低要求尺度上设计电极尺寸。 7. Preparation of the n-electrode to complete the n-GaN surface, since the surface of the requirement, the n-electrode occupy a smaller area as far as possible, generally designed to ensure a minimum required size of the electrode wire bonding on the scale.

8.分离岛状生长区域为垂直电极结构的LED芯片。 8. An isolated island growth region vertical electrode structure of the LED chip.

上述两种方法,同样适用于外延层中带有AlGaN电子阻挡层的LED的制备。 Both methods are equally applicable to the preparation of the epitaxial layer with AlGaN electron blocking layer of the LED.

附图说明 BRIEF DESCRIPTION

下面结合附图对本发明进一步详细地说明:图1岛状生长的平面几何图形结构;图2n型电极平面图;图3(a)~(i)为分立晶粒垂直结构LED芯片制备过程;图4(a)和(b)分别示意Al和Ag的反射率与膜厚的关系。 OF THE DRAWINGS The present invention is further described in detail: a planar geometric configuration diagram of island growth; 2N electrode plan view; FIG. 3 (a) ~ (i) a discrete LED chip preparation process grain vertical structure; Figure 4 (a) and (b) are a schematic of the reflectivity and the thickness of Al and Ag.

最佳实施例详细描述下面参照本发明的附图,更详细的描述出本发明的最佳实施例。 Preferred embodiments with reference to the following detailed description of the present invention, a more detailed description of preferred embodiments of the present invention.

如图3(a)~(f)所示为分立晶粒垂直结构发光二极管芯片制备过程,图中1表示是蓝宝石衬底或带有GaN生长层的衬底,2是SiO2,3是LED外延片,4是透明电极(Ni/Au),5是反射层,6是支撑衬底(Si或Cu),7是键合金属(Au-Sn合金)。 As shown in FIG 3 (a) ~ (f) shown in a discrete light emitting diode chip preparation process of a vertical grain structure, represented in FIG. 1 is a sapphire substrate or the substrate having the GaN growth layer, 2 is the LED epitaxial SiO2,3 sheet, 4 is a transparent electrode (Ni / Au), 5 is a reflective layer, 6 is a support substrate (Si or Cu), 7 is bonded to a metal (Au-Sn alloy). 下面结合附图详细说明最佳实施例一具体步骤:(a)在蓝宝石衬底1上淀积SiO22,并刻蚀SiO22以限定岛状生长区域和几何形状。 The following steps a particular preferred embodiment illustrated in detail in conjunction with the accompanying drawings: (a) depositing on a sapphire substrate 1 SiO22, SiO22 and etched to define a growth area and the island-shaped geometry. 生长区域的大小为LED器件尺寸,生长区的几何形状为有利于光导出多边形和圆形,图1中示例了矩形、六边形和圆形;(b)在(a)步骤获得的衬底上,运用MOCVD技术生长LED外延层,并进行P型激活退火。 The size of the growth area of ​​the LED device size, the geometry of the zone to facilitate the growth of the light derived polygon and a circle, in FIG. 1 illustrates a rectangular, hexagonal and circular; (b) the substrate (a) obtained in step on the use of LED epitaxial layers grown by MOCVD, an activation annealing and the P-type.

(c)在GaN基LED外延片3p面上蒸镀透明电极4,结构为Ni(50~100)/Au(50~100),然后在氧气氛中500℃下合金5分钟。 (C) a GaN-based LED epitaxial deposition surface of the substrate 3p transparent electrode 4, the structure of Ni (50 ~ 100) / Au (50 ~ 100), then at 500 ℃ alloy in an oxygen atmosphere for 5 minutes.

(d)在透明电极上蒸镀Ni(50~100)/Al(300~500)/Ni(200)/Au(2000)反射层5。 (D) deposited Ni (50 ~ 100) / Al (300 ~ 500) / Ni (200) / Au (2000) reflective layer 5 on the transparent electrode. 反射层5中高反射率金属可以为Al或Ag,对应波长,可根据厚度与反射率关系进行调整。 The reflective layer 5 is a high-reflectance metal may be Al or Ag, the corresponding wavelength can be adjusted depending on the thickness-reflectance. 图4所示为对应于不同波长,Al层厚度和Ag层厚度与反射率的关系曲线图。 FIG corresponding to a different wavelength, Al and the thickness of the Ag layer thickness and reflectance graph of Fig.

(e)Si或Cu支撑衬底上制备SiO2绝缘层,蒸镀Au-Sn合金或其他可用于键合的金属层7,并放置在真空室中抽走胶中气泡,保证岛状生长层与支撑衬底表面均匀无空洞的紧密接触,将支撑衬底加工成可以诱导裂片的图形及结构。 (E) Si or Cu SiO2 insulating layer was prepared on the support substrate, a metal layer is deposited Au-Sn alloy or other for bonding 7, and placed in a vacuum chamber pumped bubble gum, island growth layer and to ensure uniform void-free substrate surface in close contact with the support, the support substrate may be processed into a pattern and induced lobes structure.

(f)在约300℃或更低的温度下下把LED外延片与Si衬底或铜衬底6键合。 (F) at a temperature of about 300 or less deg.] C under the LED epitaxial Si substrate or copper sheet 6 bonded to the substrate.

(g)用KrF准分子激光器从蓝宝石衬底侧照射,剥离蓝宝石衬底,激光器波长248nm,照射能量密度400-600mJ/cm2,扫描频率为1Hz;剥离完成后,需要去除外延层表面的金属Ga。 (G) irradiating with KrF excimer laser from the sapphire substrate side, the sapphire substrate, the laser wavelength of 248 nm, irradiation energy density 400-600mJ / cm2, the scanning frequency of 1Hz; After stripping is completed, the need to remove the metal surface of the epitaxial layer of Ga .

(h)在n-GaN表面蒸镀n电极金属,经过图形剥离获得n电极;如图3所示为n型电极平面图,图中电极结构为Ti 200/Al 200~300/Ti 100~200/Au 4000。 (H) the n-electrode metal is deposited n-GaN surface, obtained after stripping the n-electrode pattern; FIG. 3 is a plan view of the n-type electrode, the electrode structure of FIG Ti 200 / Al 200 ~ 300 / Ti 100 ~ 200 / Au 4000.

(i)分离岛状生长区域,则获得大功率垂直电极结构的LED芯片。 (I) isolated island growth area, a vertical electrode structure is obtained high-power LED chips.

最佳实施例二技术方案如下,参考图3说明本实施例的具体步骤: Preferred technical solutions according to the second embodiment is as follows, with reference to FIG. 3 illustrate specific steps of the present embodiment:

(a)在蓝宝石衬底1上淀积SiO22,并刻蚀SiO22以限定岛状生长区域和几何形状。 (A) SiO22 deposited on a sapphire substrate 1, and etched to define SiO22 island growth region and geometry. 生长区域的大小为LED器件尺寸,生长区的几何形状为有利于光导出多边形和圆形,图1中示例了矩形、六边形和圆形。 The size of the growth area of ​​the LED device size, the geometry of the zone to facilitate the growth of the light derived polygon and a circle, in FIG. 1 illustrates a rectangular, hexagonal and circular.

(b)在(a)步骤中获得的衬底上,在蓝宝石衬底上运用氢化物气相外延(HVPE)技术生长厚n-GaN外延层,获得岛状生长的n型GaN衬底。 (B) on the substrate obtained in step (a), the use of a hydride vapor phase epitaxy (HVPE) technique growing a thick n-GaN epitaxial layer on a sapphire substrate, an n-type GaN substrate to obtain an island growth.

(c)在(b)步骤获得的岛状GaN衬底上,运用MOCVD技术二次生长Si掺杂GaN、LED有源层、p型GaN,外延片还要进行常规的P型激活退火。 (C) an island on a GaN substrate in step (b) is obtained, the use of MOCVD grown Si-doped GaN second, the LED active layer, P-type GaN, epitaxial wafer also conventional activation anneal of the P-type.

(d)在GaN基LED外延片p面上蒸镀透明电极4,结构为Ni(50)/Au(50),然后在氧气下500℃下合金5分钟。 (D) In ​​the GaN-based LED epitaxial deposition surface of the substrate p transparent electrode 4, the structure Ni (50) / Au (50), then under oxygen at 500 ℃ alloy for 5 minutes.

(e)在透明电极上蒸镀Ni(50~100)/Al(300~500)/Ni(200)/Au(2000)反射层5。 (E) vapor deposition Ni (50 ~ 100) / Al (300 ~ 500) / Ni (200) / Au (2000) reflective layer 5 on the transparent electrode. 反射层5中高反射率金属可以为Al或Ag,对应波长,可根据厚度与反射率关系进行调整。 The reflective layer 5 is a high-reflectance metal may be Al or Ag, the corresponding wavelength can be adjusted depending on the thickness-reflectance. 图4所示为对应于不同波长,Al层厚度和Ag层厚度与反射率的关系曲线图。 FIG corresponding to a different wavelength, Al and the thickness of the Ag layer thickness and reflectance graph of Fig.

(f)Si或Cu支撑衬底上1制备SiO2绝缘层,蒸镀Au-Sn合金或其他可用于键合的金属层7,并放置在真空室中抽走胶中气泡,保证岛状生长层与支撑衬底表面均匀无空洞的紧密接触,将支撑衬底加工成可以诱导裂片的图形及结构6。 (F) Si Cu or a support prepared SiO2 insulating layer on a substrate, evaporating Au-Sn alloy, or other metal layer 7 may be used for bonding, and placed in a vacuum chamber pumped bubble gum, island growth layer to ensure uniform void-free intimate contact with the surface of the supporting substrate, the supporting substrate can be processed into a pattern and induced lobes structure 6.

(g)在约300℃或更低温度下把LED外延片与Si衬底或铜衬底6键合。 (G) at a temperature of about 300 deg.] C or less, the LED epitaxial film and the Si substrate or a copper substrate 6 is bonded.

(h)用KrF准分子激光器从蓝宝石衬底侧照射,剥离蓝宝石衬底,激光器波长248nm,照射能量密度400-600mJ/cm2,扫描频率为1Hz;剥离完成后,需要去除外延层表面的金属Ga。 (H) irradiation with KrF excimer laser from the sapphire substrate side, the sapphire substrate, the laser wavelength of 248 nm, irradiation energy density 400-600mJ / cm2, the scanning frequency of 1Hz; After stripping is completed, the need to remove the metal surface of the epitaxial layer of Ga .

(i)在n-GaN表面蒸镀n电极金属,经过图形剥离获得n电极;如图3所示为n型电极平面图,图中电极结构为Ti 200/Al 200~300/Ti 100~200/Au 4000。 (I) deposition in the n-electrode metal surface of the n-GaN, n-electrode is obtained after the release pattern; FIG. 3 is a plan view of the n-type electrode, the electrode structure of FIG Ti 200 / Al 200 ~ 300 / Ti 100 ~ 200 / Au 4000.

(j)分离岛状生长区域,则获得大功率垂直电极结构的LED芯片。 (J) separating island growth area, a vertical electrode structure is obtained high-power LED chips.

在以上对应两种分立晶粒垂直结构的发光二极管芯片的制备方法的制备方法的两个最佳实施例,外延生长步骤中增加AlGaN电子阻挡层或进行其他生长,将获得具有AlGaN电子阻挡层或其他外延结构的分立晶粒垂直结构的发光二极管芯片,均可实施上述分立晶粒垂直结构的发光二极管芯片的制备方法所述的技术方案。 In two preferred embodiments of the above two methods for the preparation of the corresponding discrete LED chip production method of a vertical structure of the grains, epitaxial growth step increase AlGaN electron blocking layer or other growth and obtain the AlGaN electron blocking layer, or a vertical structure light emitting diode chip discrete epitaxial structure other grain, can be prepared embodiment aspect the light emitting diode chip discrete vertical structure of the grain.

本项发明的优点:(1)在岛状区域外延生长分立晶粒LED外延层,区别于常规的整片生长和侧向外延生长,将生长区域限制在芯片尺度内,获得芯片尺寸的高质量岛状LED外延层。 The advantages of the present invention of: (1) discrete grains epitaxially grown LED epitaxial layer island regions, different from the conventional growth of high quality whole piece and lateral epitaxial growth, to limit the dimension of the growth area within the chip, the chip size is obtained island-shaped LED epitaxial layer.

(2)生长过程中应力分布改善,可以生长比较厚的外延层,外延层中位错密度减少,晶体质量提高,使LED发光效率提高。 (2) improvement in stress distribution during growth, can be grown relatively thick epitaxial layer, the epitaxial layer reduces the dislocation density, to improve the crystal quality of the LED to improve light emission efficiency.

(3)直接在岛状图形衬底上实施与普通GaN-based LED生长接近工艺,容易实现量产;(4)在激光剥离过程中,岛状区域生长可以降低GaN和蓝宝石衬底界面处由于激光辐照而产生的应力,减少剥离过程中的损伤,减少剥离前后LED的发光光谱因应力变化而发生移动,以保证剥离衬底而获得高性能的LED。 (3) implemented directly on the substrate and the island-like pattern common GaN-based LED grow close to the process, is easy to mass production; (4) laser lift-off process, the island-shaped region growing GaN and the sapphire substrate can be reduced because the interface stress generated laser irradiation, to reduce the damage of the stripping process, reducing the LED emission spectra due to stress change before and after peeling moved to ensure separation substrate obtained by high-performance LED.

(5)岛状区域的几何图形为适合光从管芯导出的多边形和圆形,从而实现了通过生长控制管芯形状和尺寸,越过了后工艺加工获得多边形和圆形管芯的困难,为管芯制备提供了一条新的途径。 Geometry (5) for the island-like region is circular and polygonal light derived from the die, thereby controlling the growth achieved through the shape and size of the die, the difficulty in obtaining crossed crafting polygonal and round die, is preparation die provides a new way.

(6)在外延生长时即获得分立的LED晶粒,只需激光剥离去除衬底和电极制备即可获得LED芯片,无需对蓝宝石或GaN减薄、分割等工艺过程,即可获得LED芯片,与常规LED工艺相比,减少了后工艺的花费,降低了成本。 (6) is obtained i.e. discrete LED dies during the epitaxial growth, a substrate is prepared and the electrode can be obtained only laser lift-off LED chip removal, without the need for thinning the sapphire or GaN, segmentation process, to obtain an LED chip, compared with the conventional LED technology, reducing the cost of the process and reduce costs.

(7)p型反射层采用高反射率的Al复合层结构,提高芯片出光效率。 (7) p-type reflective layer of Al with high reflectivity multilayer structure, improved light-emitting efficiency chip.

本项发明对GaN基大功率发光器件提供新的方法,尤其对短波长的发光二极管具有重要意义。 The present inventions provides a new approach to high-power GaN-based light emitting devices, especially important for short-wavelength light emitting diode. 应用该方法制备的LED,具有成为主流潜力的垂直电极结构,因而光功率和热学特性好,而且由于采用有利于光出射的管芯形状(圆形、多边形),光功率会进一步提高。 The method of the preparation of the LED, having the potential to become the mainstream of a vertical electrode structure, and thus the optical power and good thermal characteristics, but thanks to facilitate the light exit die shape (circular, polygonal), the optical power may be further improved. 与目前报道的提高出光效率的方法相比,本发明所涉及的LED芯片制备工艺过程简单,有利于实现产业化。 Compared with the method for improving the light efficiency reported to date, LED chip preparation process of the present invention is simple, conducive to industrialization.

尽管为说明目的公开了本发明的最佳实施例和附图,但是本领域的技术人员可以理解:在不脱离本发明及所附的权利要求的精神和范围内,各种替换、变化和修改都是可能的。 While the disclosed embodiments and the accompanying drawings a preferred embodiment of the present invention are for illustrative purposes, those skilled in the art will be appreciated: in the present invention without departing from the appended claims and the spirit and scope of the various alternatives, modifications and variations It is possible. 因此,本发明不应局限于最佳实施例和附图所公开的内容。 Accordingly, the present invention should not be limited to the disclosure of preferred embodiments and the accompanying drawings.

Claims (10)

1.一种分立晶粒垂直结构的LED制备方法,具体包括以下步骤:1)在蓝宝石衬底上淀积SiO2,并刻蚀SiO2以限定岛状生长区域和几何形状;2)在刻蚀有SiO2图形的衬底上依次生长n型GaN、LED有源层、p型GaN,外延片还要进行常规的P型激活退火;3)在p-GaN上制备电极和反射层;4)将上述带有P电极LED外延片键合在Si或Cu支撑衬底上,放置在真空室中抽走胶中气泡;5)激光剥离去除蓝宝石衬底;6)在n-GaN面上完成n电极制备;7)分离岛状生长区域为垂直电极结构的LED芯片。 1. A method for preparing LED die discrete vertical structure, includes the following steps: 1) depositing on a sapphire substrate SiO2, and SiO2 is etched to define a growth area and the island-shaped geometry; 2) etching has SiO2 grown successively on an n-type substrate pattern GaN, the LED active layer, p-type GaN, epitaxial wafer also conventional activation anneal of the P type; 3) and the reflective electrode layer prepared on a p-GaN; 4) above P LED epitaxial wafer having an electrode bonded to a support substrate of Si or Cu, are placed in a vacuum chamber pumped bubble gum; 5) laser lift off the sapphire substrate is removed; 6) the n-electrode was prepared n-GaN surface created ; 7) isolated island growth region vertical electrode structure of the LED chip.
2.根据权利要求1所述的分立晶粒垂直结构的IED制备方法,其特征在于:支撑衬底加工成有利于芯片分割的图形及结构。 The production method of claim 1 IED vertical structure discrete grains claim, wherein: the supporting substrate to facilitate processing of the graphics chip and the divided structure.
3.根据权利要求1所述的分立晶粒垂直结构的LED制备方法,其特征在于:在岛状区域运用金属有机物化学汽相淀积技术生长分立晶粒LED外延层。 3. The LED production method of a vertical structure of the discrete grains claim, characterized in that: the use of a metal organic chemical vapor deposition technique in the island regions discrete grains LED epitaxial growth layer.
4.根据权利要求1或2所述的分立晶粒垂直结构的LED制备方法,其特征在于:刻蚀SiO2将岛状生长区域和几何形状限定为圆形或多边形。 The method of preparing discrete LED die or a vertical structure according to claim 1, wherein: SiO2 etch will define the growth region and the island-shaped circular or polygonal geometry.
5.根据权利要求1所述的分立晶粒垂直结构的LED制备方法,其特征在于:激光剥离蓝宝石衬底,并在剥离过程中采用较低能量的激光束。 5. The LED production method of a vertical structure of the discrete grains claim, wherein: the laser lift off the sapphire substrate, and a laser beam of lower energy in the stripping process.
6.根据权利要求1所述的分立晶粒垂直结构的LED制备方法,其特征在于:激光剥离去除蓝宝石衬底完成后,去除外延层表面的金属Ga。 The LED production method of a vertical structure of the discrete grains claim, wherein: the laser lift off the sapphire substrate is removed after completion of removal of the metal Ga surface of the epitaxial layer.
7.根据权利要求1所述的分立晶粒垂直结构的LED制备方法,其特征在于:用外延生长技术生长AlGaN电子阻挡层。 The LED production method of a vertical structure of the discrete grains claim, wherein: the growth of AlGaN electron blocking layer by epitaxial growth techniques.
8.一种分立晶粒垂直结构的LED制备方法,具体包括以下步骤:1)在蓝宝石衬底上淀积SiO2,并刻蚀SiO2以限定岛状生长区域和几何形状;2)在蓝宝石衬底上生长厚n-GaN外延层;3)在带有厚n-GaN岛状生长层的衬底上二次生长Si掺杂GaN、LED有源层、p型GaN,外延片还要进行常规的P型激活退火;4)在p-GaN上制备电极和反射层;5)将上述带有P电极LED外延片键合在Si或Cu支撑衬底上,放置在真空室中抽走胶中气泡;6)激光剥离去除蓝宝石衬底;7)在n-GaN面上完成n电极制备;8)分离岛状生长区域为垂直电极结构的LED芯片。 A method for preparing LED die discrete vertical structure, includes the following steps: 1) depositing on a sapphire substrate SiO2, and SiO2 is etched to define a growth area and the island-shaped geometry; 2) sapphire substrate grown thick n-GaN epitaxial layer; 3) on the substrate with a thick n-GaN layer island growth secondary growth of Si-doped GaN, the LED active layer, p-type GaN, but also for a conventional epitaxial wafer P-type activation annealing; 4) and the reflective electrode layer prepared on a p-GaN; 5) above the bubble gum having the P-electrode chip bonding the LED epitaxial Si or Cu in the supporting substrate is placed in a vacuum chamber pumped ; 6) laser lift off the sapphire substrate is removed; 7) the n-electrode was prepared n-GaN surface created; 8) isolated island growth region vertical electrode structure of the LED chip.
9.根据权利要求8所述的分立晶粒垂直结构的LED制备方法,其特征在于:在岛状生长区域内首先采用氢化物气相外延技术生长厚n-GaN外延层。 9. LED discrete grains prepared according to a vertical structure according to claim 8, wherein: Firstly grown by hydride vapor phase epitaxy thick n-GaN layer in the epitaxial growth of the island-shaped region.
10.根据权利要求8所述的分立晶粒垂直结构的LED制备方法,其特征在于:在带有厚n-GaN岛状生长层的衬底上,运用金属有机物化学汽相淀积外延生长技术,二次生长LED外延结构。 10. LED production method of the vertical structure 8 discrete grains according to claim, wherein: on a substrate having a thickness of island-shaped n-GaN layer is grown, using metal organic chemical vapor deposition epitaxial growth technique , secondary growth LED epitaxial structure.
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