CN211125684U - Patterned composite substrate and L ED epitaxial wafer - Google Patents
Patterned composite substrate and L ED epitaxial wafer Download PDFInfo
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- CN211125684U CN211125684U CN201921684854.0U CN201921684854U CN211125684U CN 211125684 U CN211125684 U CN 211125684U CN 201921684854 U CN201921684854 U CN 201921684854U CN 211125684 U CN211125684 U CN 211125684U
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Abstract
The embodiment of the utility model discloses graphical composite substrate and L ED epitaxial wafer, this graphical composite substrate, including the substrate base plate, substrate base plate upper surface is formed with a plurality of caves that the array was arranged, just the opening size of cave is less than the array and arranges the cycle of a plurality of caves, heterogeneous microstructure fills in the cave, heterogeneous microstructure is made by the heterogeneous material, the refracting index of heterogeneous material is less than or is higher than the refracting index of substrate base plate.
Description
Technical Field
The embodiment of the utility model provides a relate to the semiconductor technology, especially relate to a graphical composite substrate and L ED epitaxial wafer.
Background
The pattern in the patterned sapphire substrate is mainly reflected in two aspects, namely, on one hand, the microstructure on the surface of the patterned sapphire substrate changes a light emergent path and improves light extraction efficiency, and on the other hand, the microstructure on the surface of the patterned sapphire substrate can reduce the linear dislocation density in the GaN epitaxial material and improve the crystal quality and the internal quantum efficiency.
At present, the pattern appearance of the traditional patterned sapphire substrate is mainly in a raised conical shape, and the manufacturing method is to etch a cylindrical glue column on the surface of a sapphire flat sheet by a plasma dry method so as to achieve the purpose of pattern transfer, but the raised conical sapphire substrate has the following two defects that (1) in order to obtain a cone with symmetrical appearance and smooth side arc, the dry etching is generally in an over-etching mode, on one hand, a pit with a certain degree is inevitably formed at the bottom of the pattern, and the uneven C surface causes epitaxial defects to be increased, on the other hand, the surface of the sapphire substrate can cause certain pollution and damage due to direct ion bombardment, and the quality of an epitaxial layer material is not favorably improved, (2) the sapphire substrate material is single aluminum oxide, when light enters the sapphire substrate from an active area, the light can be reflected and refracted at the interface of the sapphire substrate and a gallium nitride epitaxial layer, and for an upright or inverted L ED chip, the light emitting efficiency is lower, and the light extraction efficiency of a light emitting diode is not favorably improved.
SUMMERY OF THE UTILITY MODEL
The utility model provides a graphical composite substrate and L ED epitaxial wafer to improve the reflection or the refraction efficiency of graphical substrate, increase the light of outgoing, improve light extraction efficiency, avoid the C face production pit of substrate to influence epitaxial growth simultaneously.
In a first aspect, an embodiment of the present invention provides a patterned composite substrate, including:
the substrate comprises a substrate base plate, wherein a plurality of concave holes are formed on the upper surface of the substrate base plate in an array arrangement, and the opening size of each concave hole is smaller than the period of the plurality of concave holes in the array arrangement;
the heterogeneous microstructures are filled in the concave holes and are made of heterogeneous materials, and the refractive index of the heterogeneous materials is lower than or higher than that of the substrate base plate.
Optionally, the upper surface of the heterogeneous microstructure is flush with the upper surface of the substrate base plate, and the bottom of the heterogeneous microstructure and the bottom of the cavity form a hollow structure.
Optionally, the heterostructure comprises at least two heterostructure layers, the refractive indices of the heterogeneous materials of the at least two heterostructure layers are different;
alternatively, the heterogeneous microstructure mixes at least two heterogeneous materials.
Optionally, the heterogeneous material comprises an oxide, a nitride, a carbide, and a simple substance.
Optionally, the shape of the cavity comprises at least one of a polygonal pyramid, a cone, an elliptical cone, a truncated cone, a cylinder, a polygonal body.
Optionally, the substrate base plate is made of sapphire, silicon carbide, silicon, gallium nitride, silicon nitride, zinc oxide, spinel, molybdenum, copper, iron, silver, tungsten, nickel or aluminum.
In a second aspect, embodiments of the present invention further provide an L ED epitaxial wafer, including the patterned composite substrate according to any one of the first aspects, and an epitaxial layer formed on the patterned composite substrate.
The embodiment of the utility model provides a graphical composite substrate and L ED epitaxial wafer, form a plurality of caves that the array was arranged on substrate upper surface, and the open size of cave is less than the cycle of the many high caves that the array was arranged, form heterogeneous microstructure in the cave simultaneously, this heterogeneous microstructure adopts the refracting index to be less than or be higher than the heterogeneous material of substrate base plate refracting index and makes, there is defect and the lower problem of light extraction efficiency in the C face that can solve current graphical composite substrate, the quality of graphical composite substrate C face has been guaranteed on the one hand, thereby can reduce dislocation density in the epitaxy, guarantee the quality of epitaxial layer, the refracting index that can also utilize heterogeneous microstructure simultaneously is less than or is higher than the refracting index of substrate, increase or reduce the refractivity difference between substrate base plate and the epitaxial layer interface of extending, can increase the light reflectivity or the light refracting index at interface to a certain extent, the emergent ray of increase, guarantee the extraction efficiency of light.
Drawings
Fig. 1 is a schematic structural diagram of a patterned composite substrate according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another patterned composite substrate according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of an L ED epitaxial wafer according to an embodiment of the present invention;
fig. 4 is a flowchart of a method for manufacturing a patterned composite substrate according to an embodiment of the present invention;
FIG. 5 is a flow chart of a structure for a method of making the patterned composite substrate of FIG. 4;
fig. 6 is a flowchart of a method for manufacturing a patterned composite substrate according to an embodiment of the present invention;
fig. 7 is a structural flow diagram of a method of making the patterned composite substrate of fig. 6.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Fig. 1 is a schematic structural diagram of a patterned composite substrate according to an embodiment of the present invention, and referring to fig. 1, the patterned composite substrate includes: a substrate 10, wherein a plurality of pits 11 arranged in an array are formed on the upper surface of the substrate 10, and the opening size D of each pit 11 is smaller than the period C of the plurality of pits arranged in an array; and the heterogeneous microstructures 20, wherein the heterogeneous microstructures 20 are filled in the concave holes 11, and the heterogeneous microstructures 20 are made of heterogeneous materials, and the refractive index of the heterogeneous materials is lower than or higher than that of the substrate base plate 10.
The method comprises the steps of forming a heterogeneous substrate 10 with a substrate base plate 10, wherein the upper surface of the substrate base plate 10 is used for growing an epitaxial layer, epitaxial materials are nucleated on a flat C surface and then grow into the epitaxial layer, forming the pits 11 on the substrate base plate 10, the C surface area of the substrate base plate 10 used for growing epitaxy can be reduced, defects generated during epitaxial growth are reduced, dislocation density is reduced, and quality of the epitaxial layer is guaranteed, meanwhile, the size of an opening of each pit 11 is smaller than the period of each pit 11, namely, a gap exists between adjacent pits 11, namely, the C surface of epitaxial growth exists on the upper surface of the substrate base plate 10, the epitaxial growth quality is guaranteed, the preparation process of each pit 11 is generally formed by etching, accordingly, when the pits 11 are formed on the flat substrate base plate 10, the C surface of epitaxial growth between adjacent pits 11 is not damaged, and accordingly, the epitaxial growth quality of the epitaxial growth can be guaranteed, the pits 11 arranged on the substrate base plate 10, namely, can be formed by a photolithography process, and the size and shape of the pits can be controlled by the light extraction from the substrate base plate, the light extraction efficiency of the substrate base plate is improved, the epitaxial layer is lower than when the light extraction from the epitaxial material of the epitaxial material, the epitaxial layer is formed by photolithography process, the epitaxial material, the epitaxial layer is increased, the refractive index of the substrate base plate, the epitaxial layer is increased, the refractive index of the epitaxial layer is increased, the epitaxial layer, the refractive index of the substrate base plate, the epitaxial layer is increased, the refractive index of the epitaxial layer is increased, the substrate base plate, the epitaxial layer is increased, the refractive index of the epitaxial layer is increased, the refractive index of the epitaxial layer is increased, the epitaxial layer is increased by the refractive index of the epitaxial layer is increased, the epitaxial layer, the refractive index of the epitaxial layer is increased by the refractive index of the substrate base plate, the epitaxial layer, the refractive index of the epitaxial layer, the epitaxial layer is increased by the refractive index of the epitaxial layer.
The embodiment of the utility model provides a graphical composite substrate, form a plurality of caves that the array was arranged on substrate base plate upper surface, and the opening size of cave is less than the cycle of the many high caves that the array was arranged; meanwhile, a heterogeneous microstructure is formed in the concave hole, the heterogeneous microstructure is made of a heterogeneous material with the refractive index lower than or higher than that of the substrate base plate, the problems that the C surface of the existing graphical composite substrate has defects and the light emergence efficiency is low can be solved, on one hand, the quality of the C surface of the graphical composite substrate is ensured, so that the dislocation density in epitaxy can be reduced, and the quality of an epitaxial layer is ensured; meanwhile, the refractive index of the heterogeneous microstructure is lower than or higher than that of the substrate, so that the refractive index difference between the substrate and the epitaxial layer interface is increased or reduced, the light reflectivity or the light refractive index of the interface can be increased to a certain extent, the emergent light is increased, and the light extraction efficiency is ensured.
For example, when a conventional sapphire substrate is used, the refractive index of the sapphire substrate is 1.78, and the refractive index of the epitaxial layer is 2.5, for an L ED chip with an upright structure, a heterogeneous material with a refractive index lower than 1.78 is selected for preparation, the difference between the interface refractive index of the heterogeneous microstructure and the interface refractive index of the epitaxial layer is increased, and the light reflection efficiency can be improved, while for a L ED chip with an inverted structure, the heterogeneous material with a refractive index higher than 1.78 is selected for preparation, so that the difference between the refractive index of the heterogeneous microstructure and the refractive index of the epitaxial layer is small, the refractive index of light is increased, the transmission efficiency of light is improved, when pits are formed by etching on the substrate, the pits can be uniformly formed, the pits can also be provided to include various shapes, the shapes of pits can optionally include a plurality of cones, the shapes of cones, the cone cones can include at least one pyramid, the pyramid.
Fig. 2 is a schematic structural diagram of another patterned composite substrate according to an embodiment of the present invention, referring to fig. 2, in the patterned composite substrate, the upper surface of the heterogeneous microstructure 20 can be further disposed to be flush with the upper surface of the substrate base plate 10, and the bottom of the heterogeneous microstructure 20 and the bottom of the cavity 11 form a hollow structure 30.
Wherein, when preparing the heterogeneous microstructure 20, the process conditions of the preparation can be controlled so that the heterogeneous material is not deposited to the bottom of the cavity 11, but is deposited and grown at the opening position of the cavity 11. At this time, the bottom of the heterogeneous microstructure 20 and the bottom of the cavity 11 form a hollow structure 30, the hollow structure 30 is a gas, and the refractive index thereof is much lower than that of the substrate 10 and the heterogeneous microstructure 20, so that the hollow structure 30 can also improve the difference of the refractive index between the epitaxial layer and the substrate 20, further perform interface light reflection or light refraction, and improve the light extraction efficiency.
Alternatively, the patterned composite substrate iN the above embodiments may be configured to have a heterogeneous microstructure made of a single heterogeneous material, or configured to include at least two heterogeneous microstructure layers, the heterogeneous materials of the at least two heterogeneous microstructure layers are different, or configured to have a heterogeneous microstructure mixed with at least two heterogeneous materials, the two heterogeneous microstructure layers or the at least two heterogeneous materials may be configured to replace the heterogeneous microstructure made of a single heterogeneous material, so as to achieve a target refractive index or facilitate preparation under existing process conditions, and one skilled iN the art may reasonably select the structural composition and material composition of the heterogeneous microstructure according to actual reflection effects and actual preparation process conditions, without limitation.
The embodiment of the utility model provides an L ED epitaxial wafer is still provided, fig. 3 is the utility model provides a L ED epitaxial wafer's schematic structure drawing, refer to fig. 3, this L ED epitaxial wafer includes the embodiment of the utility model provides an arbitrary patterned composite substrate 100 and form epitaxial layer 200 on patterned composite substrate 100.
For forming epitaxial layers on heterogeneous microstructures of different materials, different L ED epitaxial wafer growth techniques are required, and for the patterned composite substrate provided by the embodiment of the present invention, the epitaxial layer 200 on the L ED epitaxial wafer can be GaN, AlGaN epitaxial layer, etc. the L ED epitaxial wafer has the same beneficial effects as the patterned composite substrate 100 provided by the above-mentioned embodiment.
To the above-mentioned graphical composite substrate, the embodiment of the present invention further provides a method for preparing a graphical composite substrate, fig. 4 is a flowchart of the method for preparing a graphical composite substrate provided by the embodiment of the present invention, fig. 5 is a structural flowchart of the method for preparing a graphical composite substrate shown in fig. 4, and referring to fig. 4 and fig. 5, the method for preparing a graphical composite substrate includes:
and S110, coating the polymer glue layer 30 on the substrate base plate 10.
Referring to a) of fig. 5, the substrate 10 is made of sapphire, silicon carbide, silicon, gallium nitride, silicon nitride, zinc oxide, spinel, molybdenum, copper, iron, silver, tungsten, nickel or aluminum, the polymer glue layer 30 is used to form a mask pattern for etching a cavity of the substrate, and when the polymer glue layer is coated, a spin coating process or the like may be used to control the film thickness. Alternatively, the film thickness of the polymer paste layer 30 may be set to 0.1 to 3.5 μm.
S120, patterning the polymer adhesive layer 30 to form a polymer adhesive layer mask 31.
Referring to b) of fig. 5, the polymer adhesive layer 30 may be a photosensitive photoresist, a thermosensitive imprinting adhesive, a photosensitive and thermosensitive imprinting adhesive, etc., to correspond to the patterning through exposure, thermal pressing, etc.
S130, etching the substrate 10 with the polymer adhesive layer mask 31, and forming a plurality of cavities 11 arranged in an array on the substrate 10, wherein the opening size of the cavities 11 is smaller than the period C of the plurality of cavities 11 arranged in an array.
Referring to fig. 5C), it can be understood by those skilled in the art that the pattern of the polymer adhesive layer mask 31 determines the shape and arrangement of the openings 11 formed on the substrate 10, and when the cavities 11 are formed, the pattern of the polymer adhesive layer mask 31 needs to be designed in advance to satisfy the requirement that the opening dimension D of the cavities 11 is smaller than the period C of the cavities 11, which is not described herein again. When the pits 11 are etched, the non-pit positions are covered by the polymer adhesive layer mask 31, so that etching and damage of etching liquid or gas to the substrate base plate 10 can be avoided, the C surface of the substrate base plate can be ensured to be flat, and the growth of an epitaxial layer is facilitated.
S140, depositing a heterogeneous material to form the heterogeneous microstructure 20 filled in the concave hole 11, wherein the refractive index of the heterogeneous material is lower than or higher than that of the substrate base plate 10.
Referring to d) of fig. 5, after forming the cavity, a heterogeneous material is deposited and filled in the cavity to ensure that the substrate inhibits the growth of the epitaxial material at the cavity. Meanwhile, the heterogeneous microstructure formed by the heterogeneous material with the refractive index lower than or higher than that of the substrate can increase or reduce the difference of the interface refractive index with the epitaxial layer, improve or reduce the reflectivity of light and improve the light extraction efficiency. The heterogeneous microstructure can be generally prepared by chemical vapor deposition or other process means, and a suitable process method can be selected for a specific heterogeneous material, which is not limited herein.
The embodiment of the utility model provides a preparation method of graphical composite substrate, include coating the polymer glue film on the substrate base plate, then carry out the patterning to the polymer glue film, form polymer glue film mask; etching the substrate by using the polymer adhesive layer mask, forming a plurality of concave holes which are arranged in an array manner on the substrate, wherein the opening size of the concave holes is smaller than the period of the plurality of concave holes which are arranged in the array manner, and finally, forming a heterogeneous microstructure filled in the concave holes by depositing a heterogeneous material, wherein the refractive index of the heterogeneous material is lower than or higher than that of the substrate, so that the problems that the C surface of the existing graphical composite substrate has defects and the light emergence rate is lower can be solved, on one hand, the quality of the C surface of the graphical composite substrate is ensured, the dislocation density in epitaxy can be reduced, and the quality of an epitaxial layer is ensured; meanwhile, the refractive index of the heterogeneous microstructure is lower than or higher than that of the substrate, so that the refractive index difference between the substrate and the epitaxial layer interface is increased or reduced, the light reflectivity or the light refractive index of the interface can be increased to a certain extent, the emergent light is increased, and the light extraction efficiency is ensured.
Further, for the graphical composite substrate as shown in fig. 2, the embodiment of the present invention further provides a method for preparing a graphical composite substrate, fig. 6 is a flowchart of a method for preparing a graphical composite substrate provided by the embodiment of the present invention, fig. 7 is a structural flowchart of the method for preparing a graphical composite substrate as shown in fig. 6, and referring to fig. 6 and fig. 7, the method for preparing a graphical composite substrate specifically includes:
s210, coating a polymer glue layer on the substrate base plate.
Referring to a) of fig. 7, taking the polymer layer as AZ1300 photoresist as an example, a layer of photoresist with a thickness of 20 μm can be spin-coated at a spin-coating speed of 4000 rpm. The photoresist layer was then cured by baking at 115 ℃ for 120 seconds to give a yellow sheet.
S220, patterning the polymer adhesive layer to form a polymer adhesive layer mask.
Referring to fig. 7 b), in this step, the polymer glue layer may be exposed, specifically, by using a Nikon exposure machine, with an exposure amount of 200 ms; and developing the exposed yellow sheet to finally obtain the polymer glue layer mask.
And S230, etching the substrate base plate by using the polymer adhesive layer mask and adopting an inductively coupled plasma dry etching process, and forming a plurality of concave holes arranged in an array on the substrate base plate by adjusting the power, the gas flow ratio and the etching time of the upper electrode and the lower electrode, wherein the opening size of the concave holes is smaller than the period of the plurality of concave holes arranged in the array.
Referring to fig. 7 c), an Inductively Coupled Plasma (ICP) dry etching process is a process for generating ions and electrons with high reactivity by using a radio frequency power source, and performing physical bombardment and chemical reaction on a substrate to perform etching. When etching the pits of the substrate, the power of the upper and lower electrodes, the flow ratio of the gas and the etching time can be adjusted to regulate the shape, depth and the like of the pits. Illustratively, taking a sapphire substrate as an example, when the pits are etched by the ICP dry etching process, the sapphire substrate coated with the polymer glue layer mask can be specifically usedPlacing in a process chamber, vacuumizing, and introducing process gas (BCl)3And CHF3) The power of the upper electrode can be selected from 1000-1500W, and the power of the lower electrode can be selected from 400-700W, BCl3And CHF3The flow ratio of (A) can be set in the range of 10% -20%, and the etching time is 800-1000 s.
The dry etching is incomplete etching, and when the dry etching is finished, the polymer glue layer mask still remains on the surface of the substrate. Illustratively, after the ICP dry etching in the above steps, the polymer glue layer mask on the substrate still has a thickness of 0.5 μm remained. Therefore, optionally, after the step S130 or S230, the polymer glue layer mask needs to be cleaned. Specifically, for the polymer adhesive layer, the ultrasonic treatment can be firstly carried out in an acetone solution for 5-15 min; then the substrate is placed in SPM solution (H) with the temperature of 80-130 DEG C2SO4：H2O2In a ratio of 1: 5-1: 8) washing for 20min, and finally washing for 15min by using deionized water.
S240, depositing a heterogeneous material on the substrate by adopting a plasma enhanced chemical vapor deposition method to form a heterogeneous microstructure filled in the concave hole, and adjusting the pressure, power, gas proportion, slide groove temperature or process time of the plasma enhanced chemical vapor deposition to enable the bottom of the heterogeneous microstructure and the bottom of the concave hole to form a hollow structure, wherein the refractive index of the heterogeneous material is different from that of the substrate.
Exemplarily, referring to d) of FIG. 7, in this step, the cleaned substrate can be placed into a slide groove of a chemical vapor deposition apparatus, the temperature of the slide groove is adjusted to 200-300 ℃, and the chamber pressure is set to 50-100Pa and the upper power is set to 150-100W, SiH4And N2The flow ratio of O is 10-30%, the process time is 800-.
In the step, the heterogeneous material is deposited on the flat C surface of the substrate base plate in the process of depositing the heterogeneous material in the concave hole, so that the substrate base plate and the heterogeneous microstructure can be polished in order to ensure the exposure of the C surface and the leveling of the C surface of the substrate base plate and the upper surface of the heterogeneous microstructure, the heterogeneous material is removed through a mechanical means, the heterogeneous microstructure is thinned, and the C surface of the substrate base plate is exposed.
It should be noted that the foregoing is only a preferred embodiment of the present invention and the technical principles applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail with reference to the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the scope of the present invention.
Claims (5)
1. A patterned composite substrate, comprising:
the substrate comprises a substrate base plate, wherein a plurality of concave holes are formed on the upper surface of the substrate base plate in an array arrangement, and the opening size of each concave hole is smaller than the period of the plurality of concave holes in the array arrangement;
the heterogeneous microstructures are filled in the concave holes and are made of heterogeneous materials, and the refractive index of the heterogeneous materials is lower than or higher than that of the substrate base plate.
2. The patterned composite substrate of claim 1,
the upper surface of the heterogeneous microstructure is flush with the upper surface of the substrate base plate, and the bottom of the heterogeneous microstructure and the bottom of the concave hole form a hollow structure.
3. The patterned composite substrate of claim 1 or 2,
the heterogeneous microstructure comprises at least two heterogeneous microstructure layers, and the refractive indexes of heterogeneous materials of the at least two heterogeneous microstructure layers are different;
alternatively, the heterogeneous microstructure mixes at least two heterogeneous materials.
4. The patterned composite substrate of claim 1, wherein the shape of the cavity comprises at least one of a polygonal pyramid, a cone, an elliptical cone, a truncated cone, a cylinder, a polygonal body.
5. An L ED epitaxial wafer, comprising the patterned composite substrate of any one of claims 1-4, and an epitaxial layer formed on the patterned composite substrate.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112635627A (en) * | 2019-10-08 | 2021-04-09 | 东莞市中图半导体科技有限公司 | Graphical composite substrate, preparation method thereof and LED epitaxial wafer |
| CN112652687A (en) * | 2020-12-22 | 2021-04-13 | 至芯半导体(杭州)有限公司 | Composite substrate and manufacturing method thereof |
| CN112951962A (en) * | 2021-01-28 | 2021-06-11 | 广东中图半导体科技股份有限公司 | Polygonal concave patterned substrate and LED epitaxial wafer |
| CN113445004A (en) * | 2021-08-30 | 2021-09-28 | 至芯半导体(杭州)有限公司 | AlN thin film and preparation method and application thereof |
| CN113745375A (en) * | 2021-08-26 | 2021-12-03 | 上海天马微电子有限公司 | Growth substrate, light-emitting diode and preparation method thereof |
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2019
- 2019-10-08 CN CN201921684854.0U patent/CN211125684U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112635627A (en) * | 2019-10-08 | 2021-04-09 | 东莞市中图半导体科技有限公司 | Graphical composite substrate, preparation method thereof and LED epitaxial wafer |
| CN112652687A (en) * | 2020-12-22 | 2021-04-13 | 至芯半导体(杭州)有限公司 | Composite substrate and manufacturing method thereof |
| CN112951962A (en) * | 2021-01-28 | 2021-06-11 | 广东中图半导体科技股份有限公司 | Polygonal concave patterned substrate and LED epitaxial wafer |
| CN113745375A (en) * | 2021-08-26 | 2021-12-03 | 上海天马微电子有限公司 | Growth substrate, light-emitting diode and preparation method thereof |
| CN113445004A (en) * | 2021-08-30 | 2021-09-28 | 至芯半导体(杭州)有限公司 | AlN thin film and preparation method and application thereof |
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Address after: No.4, Gongye North 2nd Road, Songshanhu high tech Industrial Development Zone, Dongguan, Guangdong 523000 Patentee after: Guangdong Zhongtu Semiconductor Technology Co., Ltd Address before: No.4, Gongye North 2nd Road, Songshanhu high tech Industrial Development Zone, Dongguan, Guangdong 523000 Patentee before: DONGGUAN SINOPATT SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |