CN113745375A - Growth substrate, light-emitting diode and preparation method thereof - Google Patents
Growth substrate, light-emitting diode and preparation method thereof Download PDFInfo
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- CN113745375A CN113745375A CN202110989319.1A CN202110989319A CN113745375A CN 113745375 A CN113745375 A CN 113745375A CN 202110989319 A CN202110989319 A CN 202110989319A CN 113745375 A CN113745375 A CN 113745375A
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
The invention discloses a growth substrate, a light-emitting diode and a preparation method thereof. The growth substrate is used for preparing the light-emitting diode, the growth substrate comprises a first substrate and a second substrate which are arranged in a stacked mode, light absorptivity of the first substrate and light absorptivity of the second substrate are different, one side, far away from the first substrate, of the second substrate comprises a first three-dimensional pattern, the thickness of the growth substrate at a first position is smaller than that of the growth substrate at a second position, light absorption amount of the growth substrate at the first position is alpha 1, light absorption amount of the growth substrate at the second position is alpha 2, and [ alpha 1-alpha 2 ]/alpha 2 is less than 20%. According to the growth substrate, the light-emitting diode and the preparation method thereof, the growth substrate comprises the first substrate and the second substrate which are different in absorptivity, so that the laser energy uniformity of an interface between the growth substrate and the light-emitting diode during laser stripping is improved, the problem that the light-emitting diode is easily damaged during laser stripping is solved, and the laser stripping yield is improved.
Description
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a growth substrate, a light emitting diode and a preparation method thereof.
Background
Small-sized light emitting diodes such as Mini-LEDs (sub-millimeter light emitting diodes), Micro-LEDs (Micro light emitting diodes), and the like have the advantages of high resolution, high brightness, power saving, fast response speed, high light emitting efficiency, long service life, and the like, and are widely applied to the display fields of mobile phones, notebook computers, televisions, and the like.
The existing light emitting diode is generally grown on a growth substrate, and the light emitting diode is subsequently stripped from the growth substrate by a laser stripping process and transferred to an array substrate, so that a display function is realized, but the damage of the light emitting diode is easily caused in the laser stripping process, and the product yield is influenced.
Disclosure of Invention
The invention provides a growth substrate, a light-emitting diode and a preparation method thereof, which aim to solve the problem that the light-emitting diode is easy to damage in the laser stripping process and improve the laser stripping yield.
In a first aspect, an embodiment of the present invention provides a growth substrate for manufacturing a light emitting diode, where the growth substrate includes a first substrate and a second substrate that are stacked, and light absorptance of the first substrate is different from that of the second substrate;
the side, far away from the first substrate, of the second substrate comprises a first three-dimensional pattern;
a thickness of the growth substrate at a first location is less than a thickness of the growth substrate at a second location;
the light absorption amount of the growth substrate at the first position is α 1, the light absorption amount of the growth substrate at the second position is α 2, and | α 1- α 2|/α 2 < 20%.
In a second aspect, the embodiment of the present invention further provides a light emitting diode, where the light emitting diode is prepared from the growth substrate of the first aspect;
the light emitting diode comprises a first type semiconductor, an active layer and a second type semiconductor, wherein the active layer is located between the first type semiconductor and the second type semiconductor, and one side, far away from the second type semiconductor, of the first type semiconductor is provided with a three-dimensional pattern.
In a third aspect, an embodiment of the present invention further provides a method for manufacturing a light emitting diode, where the method is used to manufacture the light emitting diode according to the second aspect, and the method includes:
providing a growth substrate, wherein the growth substrate comprises a first substrate and a second substrate which are arranged in a stacked mode, the light absorption rates of the first substrate and the second substrate are different, one side, far away from the first substrate, of the second substrate comprises a first three-dimensional pattern, the thickness of the growth substrate at a first position is smaller than that of the growth substrate at a second position, the light absorption amount of the growth substrate at the first position is alpha 1, the light absorption amount of the growth substrate at the second position is alpha 2, and | alpha 1-alpha 2 |/alpha 2 < 20%;
preparing the light emitting diode on the growth substrate;
and illuminating one side of the growth substrate, which is far away from the light-emitting diode, so as to strip the light-emitting diode from the growth substrate.
According to the growth substrate, the light-emitting diode and the preparation method thereof provided by the embodiment of the invention, the side of the second substrate, which is far away from the first substrate, is provided with the first three-dimensional pattern, so that the light-emitting surface of the light-emitting diode grown on the second substrate forms the three-dimensional pattern which is complementary with the first three-dimensional pattern, the problem that the light generated by the light-emitting diode is totally reflected at the interface between the light-emitting surface of the light-emitting diode and air due to the large refractive index of the light-emitting diode material is solved, and the light-emitting efficiency of the light-emitting diode is improved. Meanwhile, the growth substrate comprises a first substrate and a second substrate which are different in absorptivity, and the first substrate and the second substrate are matched with each other to modulate the light absorptivity of the growth substrate at different positions, so that the light absorption amount alpha 1 of the growth substrate at the first position and the light absorption amount alpha 2 of the growth substrate at the second position are ensured to meet the condition that the ratio of alpha 1-alpha 2/alpha 2 is less than 20%, therefore, when a laser stripping process is carried out, the laser energy difference of the growth substrate at different positions is reduced, the laser energy uniformity of an interface between the growth substrate and the light-emitting diode is improved, the damage probability of the light-emitting diode is reduced, and the laser stripping yield is improved.
Drawings
Fig. 1 is a schematic structural diagram of a growth substrate according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a light emitting diode grown on a growth substrate according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of another growth substrate according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of another growth substrate according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of another growth substrate according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of another growth substrate according to an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of another growth substrate according to an embodiment of the present invention;
FIG. 8 is a schematic structural diagram of another growth substrate according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of a light emitting diode according to an embodiment of the present invention;
fig. 10 is a schematic flow chart illustrating a method for manufacturing a light emitting diode according to an embodiment of the present invention;
fig. 11 is a schematic structural diagram of a method for manufacturing a light emitting diode according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Fig. 1 is a schematic structural diagram of a growth substrate according to an embodiment of the present invention, and as shown in fig. 1, the growth substrate according to the embodiment of the present invention is used for manufacturing a light emitting diode, and includes a first substrate 10 and a second substrate 11 that are stacked, where light absorptance of the first substrate 10 is different from that of the second substrate 11, and a side of the second substrate 11 away from the first substrate 10 includes a first three-dimensional pattern 12. The thickness of the growth substrate at the first position a is smaller than the thickness of the growth substrate at the second position B, the light absorption amount of the growth substrate at the first position a is α 1, the light absorption amount of the growth substrate at the second position B is α 2, and | α 1- α 2|/α 2 < 20%.
Specifically, as shown in fig. 1, a first substrate 10 and a second substrate 11 are stacked, and the first substrate 10 and the upper surface are in direct contact with the lower surface of the second substrate 11. The first substrate 10 and the second substrate 11 have different light absorptance, and it should be noted that the first substrate 10 and the second substrate 11 may have different light absorptance for light of a specific wavelength, for example, different light absorptance for laser light in the first substrate 10 and the second substrate 11.
Fig. 2 is a schematic structural view of a growth substrate grown light emitting diode according to an embodiment of the present invention, as shown in fig. 1 and fig. 2, a side of a second substrate 11 of the growth substrate away from a first substrate 10 includes a first three-dimensional pattern 12, a light emitting diode 14 is subsequently grown on a side of the second substrate 11 away from the first substrate 10, and a light emitting surface 15 of the light emitting diode 14 is located on a side of the light emitting diode 14 close to the second substrate 11, i.e. the light emitting surface 15 of the light emitting diode 14 is in direct contact with the first three-dimensional pattern 12, so that the light emitting surface 15 of the light emitting diode 14 forms a three-dimensional pattern complementary to the first three-dimensional pattern 12, which can improve a problem of total reflection of light generated by the light emitting diode 14 at an interface between the light emitting surface 15 of the light emitting diode 14 and air due to a large refractive index of a material of the light emitting diode 14, thereby improving light emitting efficiency of the light emitting diode 14, the display brightness of the LED display panel is improved.
After the light emitting diodes are grown on the growth substrate, the light emitting diodes are peeled off from the growth substrate by a laser peeling technology, so that the light emitting diodes are transferred to the array substrate to realize a display function. The laser lift-off technology is a method for realizing separation of the light-emitting diode and the growth substrate by irradiating the interface between the growth substrate and the light-emitting diode with laser through the growth substrate and enabling materials at the interface to absorb laser energy to generate vaporization at high temperature.
The inventor researches and discovers that since the side of the second substrate 11 far away from the first substrate 10 comprises the first three-dimensional pattern 12, the thickness of the growth substrate is not uniform at different positions, so that the absorption rate of the growth substrate to laser light is different at different positions when the laser lift-off process is carried out, the energy of the laser light reaching the interface between the growth substrate and the light-emitting diode is not uniform, the light-emitting diode is easily damaged, and the product yield is affected. For example, as shown in fig. 1, the thickness of the growth substrate at the first position a is smaller than the thickness of the growth substrate at the second position B, if the growth substrate only includes one material, the absorption rate of the light absorbed at the first position a is smaller than that of the laser at the second position B, so that the laser energy from the laser to the first position a is larger than that of the laser to the second position B, and at this time, if the laser energy at the second position B is ensured to be able to peel the growth substrate from the light emitting diode, the laser energy at the first position a may be too large to cause the light emitting diode to be damaged; if the laser energy at the first position a is not too large, the laser energy at the second position B may be too small to completely peel off, and material residue may be caused.
In the embodiment, the growth substrate comprises the first substrate 10 and the second substrate 11 with different light absorption rates, the first substrate 10 and the second substrate 11 cooperate with each other to modulate the light absorption rates at different positions of the growth substrate, so that the light absorption amount α 1 of the growth substrate at the first position a and the light absorption amount α 2 of the growth substrate at the second position B satisfy | α 1- α 2|/α 2 < 20%, when the laser lift-off process is performed, the laser energy difference of the growth substrate at different positions is reduced, the laser energy uniformity at the interface between the growth substrate and the light-emitting diode is improved, the probability of damage of the light-emitting diode is reduced, and the laser lift-off yield is improved.
According to the growth substrate provided by the embodiment of the invention, the side of the second substrate 11, which is far away from the first substrate 10, is provided with the first three-dimensional pattern 12, so that the light-emitting surface of the light-emitting diode growing on the first substrate forms the three-dimensional pattern which is complementary to the first three-dimensional pattern 12, the problem that the light generated by the light-emitting diode is totally reflected at the interface between the light-emitting surface of the light-emitting diode and air due to the large refractive index of the light-emitting diode material is solved, and the light-emitting efficiency of the light-emitting diode is improved. Meanwhile, the growth substrate comprises the first substrate 10 and the second substrate 11 which have different absorptivity, and the first substrate 10 and the second substrate 11 are matched with each other to modulate the light absorptivity of the growth substrate at different positions, so that the light absorption amount alpha 1 of the growth substrate at the first position A and the light absorption amount alpha 2 of the growth substrate at the second position B are ensured to meet the condition that the ratio of alpha 1-alpha 2/alpha 2 is less than 20%, therefore, when the laser lift-off process is carried out, the laser energy difference of the growth substrate at different positions is reduced, the laser energy uniformity at the interface between the growth substrate and the light-emitting diode is improved, the probability of damage of the light-emitting diode is reduced, and the laser lift-off yield is improved.
Optionally, | α 1- α 2|/α 2 < 10%.
The | alpha 1-alpha 2 |/alpha 2 is set to be less than 10%, so that the laser energy difference of the growth substrate at different positions during laser stripping is further reduced, the laser energy at the interface between the growth substrate and the light-emitting diode is more uniform, the probability of damage of the light-emitting diode is further reduced, and the laser stripping yield is improved.
The light absorption amount α 1 of the growth substrate at the first position a and the light absorption amount α 2 of the growth substrate at the second position B may be adjusted according to actual requirements, for example, | α 1- α 2|/α 2 is set to 18%, 15%, 12%, 10%, etc., further, | α 1- α 2|/α 2 may be set to 8%, 5%, 2%, etc., and the embodiment of the present invention is not limited thereto. It can be understood that the smaller | α 1- α 2|/α 2, the smaller the difference of laser energy at different positions of the growth substrate is when performing the laser lift-off process, which is more beneficial to reducing the probability of damage of the light emitting diode and improving the yield of laser lift-off.
With continued reference to fig. 1 and 2, optionally, a side of the first substrate 10 adjacent to the second substrate 11 includes a second space pattern 13, a thickness of the first substrate 10 at the first position a is different from a thickness of the first substrate 10 at the second position B, and a thickness of the second substrate 11 at the first position a is different from a thickness of the second substrate 11 at the second position B.
Specifically, as shown in fig. 1, by providing the second three-dimensional pattern 13 on the side of the first substrate 10 close to the second substrate 11, the thickness of the first substrate 10 at the first position a is different from the thickness of the first substrate 10 at the second position B, the thickness of the second substrate 11 at the first position a is different from the thickness of the second substrate 11 at the second position B, and due to the difference in light absorption rate between the first substrate 10 and the second substrate 11, by modulating the thicknesses of the first substrate 10 and the second substrate 11 at different positions, the ratio of the thicknesses of the first substrate 10 and the second substrate 11 at different positions of the growth substrate is different, the difference in light absorption amount of the growth substrate at different positions is reduced, so that when performing the laser lift-off process, the difference in laser energy of the growth substrate at different positions is reduced, and the uniformity of laser energy at the interface between the growth substrate and the light emitting diode is improved, the probability of damage of the light emitting diode is reduced, and the laser stripping yield is improved.
With continued reference to fig. 1 and 2, optionally, the first substrate 10 has a greater light absorption than the second substrate 11.
The light absorption rate of the first substrate 10 and the light absorption rate of the second substrate 11 can be set according to actual requirements, and only the light absorption rate of the first substrate 10 and the light absorption rate of the second substrate 11 need to be different, so that the light absorption rates of the growth substrate at different positions can be compensated by modulating the thickness ratio of the first substrate 10 and the second substrate 11 at different positions.
For example, in this embodiment, the light absorption rate of the first substrate 10 is set to be greater than that of the second substrate 11, which is not limited in this embodiment of the present invention.
With continued reference to fig. 1 and 2, optionally, the thickness of the first substrate 10 at the first location a is greater than the thickness of the first substrate 10 at the second location B.
In this embodiment, as shown in fig. 1, taking the light absorption rate of the first substrate 10 as an example larger than that of the second substrate 11, since the light absorption rate of the first substrate 10 is larger, the thickness of the first substrate 10 at the first position a is larger than that of the first substrate 10 at the second position B, so as to increase the light absorption rate of the growth substrate at the first position a, thereby compensating for the light absorption of the growth substrate at the first position a due to the smaller thickness, and reducing the difference in light absorption amount of the growth substrate at the first position a and the second position B, so that when performing the laser lift-off process, the difference in laser energy of the growth substrate at different positions is reduced, the uniformity of laser energy at the interface between the growth substrate and the light emitting diode is improved, the probability of damage of the light emitting diode is reduced, and the yield of the laser lift-off is improved.
With continued reference to fig. 1 and 2, optionally, the first stereoscopic pattern 12 includes a first groove structure 121, the second stereoscopic pattern 13 includes a first protrusion structure 131, and the first groove structure 121 is disposed corresponding to the first protrusion structure 131.
Specifically, as shown in fig. 1 and fig. 2, the first three-dimensional pattern 12 includes first groove structures 121, and the number and arrangement of the first groove structures 121 may be set according to actual requirements, which is not limited in the embodiment of the present invention.
As shown in fig. 2, the light emitting diode 14 grows on the side of the second substrate 11 away from the first substrate 10, the light emitting surface 15 of the light emitting diode 14 directly contacts the first groove structure 121 to form a protrusion structure complementary to the first groove structure 121, and the protrusion structure makes the light emitting surface 15 of the light emitting diode 14 uneven, so as to improve the problem that the light generated by the light emitting diode 14 is totally reflected at the interface between the light emitting surface 15 of the light emitting diode 14 and the air due to the large refractive index of the material of the light emitting diode 14, thereby improving the light extraction efficiency of the light emitting diode 14.
With continued reference to fig. 1 and 2, the thickness of the growth substrate at the first groove structure 121 is significantly reduced, so as to reduce the light absorption rate of the growth substrate at the position (e.g., the first position a) of the first groove structure 121, and the laser energy at the interface between the growth substrate and the light emitting diode is not uniform when the laser lift-off process is performed.
In the embodiment, by providing that the second three-dimensional pattern 13 includes the first protrusion structures 131 corresponding to the first groove structures 121, so as to increase the thickness of the first substrate 10 at the positions (e.g. the first positions a) of the first groove structures 121, since the light absorption rate of the first substrate 10 is greater than that of the second substrate 11, increasing the thickness of the first substrate 10 helps to increase the light absorption rate of the growth substrate at the positions (e.g. the first positions a) of the first groove structures 121, thereby compensating the light absorption at the positions of the first groove structures 121, reducing the difference in light absorption rate of the growth substrate at the positions (e.g. the first positions a) and other positions (e.g. the second positions B) of the first groove structures 121, so that when performing the laser lift-off process, the difference in laser energy of the growth substrate at different positions is reduced, and the uniformity in laser energy at the interfaces between the growth substrate and the light emitting diode is improved, the probability of damage of the light emitting diode is reduced, and the laser stripping yield is improved.
It should be noted that, the first groove structure 121 and the first protrusion structure 131 are arranged correspondingly, that is, the first groove structure 121 and the first protrusion structure 131 are at least partially overlapped in a direction perpendicular to the first substrate 10, for example, as shown in fig. 1 and fig. 2, a vertical projection of the first groove structure 121 on the first substrate 10 is overlapped with a vertical projection of the first protrusion structure 131 on the first substrate 10, so that the first substrate 10 and the second substrate 11 better cooperate with each other to reduce a difference in light absorption rate of the growth substrate at different positions, and a person skilled in the art may arrange overlapping positions of the first groove structure 121 and the first protrusion structure 131 according to actual needs, which is not specifically limited by the embodiment of the present invention.
Fig. 3 is a schematic structural view of another growth substrate according to an embodiment of the present invention, as shown in fig. 3, optionally, the first three-dimensional pattern 12 includes a second protrusion structure 122, the second three-dimensional pattern 13 includes a second groove structure 132, and the second protrusion structure 122 and the second groove structure 132 are correspondingly disposed.
Specifically, as shown in fig. 3, the first three-dimensional pattern 12 includes the second protrusion structures 122, and the number and the arrangement of the second protrusion structures 122 may be set according to actual requirements, which is not limited in the embodiment of the present invention.
As shown in fig. 3, a light emitting diode is grown on the side of the second substrate 11 away from the first substrate 10, and the light emitting surface of the light emitting diode directly contacts the second protrusion structure 122, so as to form a groove structure complementary to the second protrusion structure 122, and the groove structure makes the light emitting surface of the light emitting diode uneven, so as to improve the problem that the light generated by the light emitting diode is totally reflected at the interface between the light emitting surface of the light emitting diode and the air due to the large refractive index of the light emitting diode material, thereby improving the light emitting efficiency of the light emitting diode.
With continued reference to fig. 3, the thickness of the growth substrate at the second protruding structure 122 may be significantly increased, so as to increase the light absorption rate of the growth substrate at the position (e.g., the second position B) of the second protruding structure 122, which may cause non-uniform laser energy at the interface between the growth substrate and the light emitting diode when performing the laser lift-off process.
In the embodiment, by disposing the second three-dimensional pattern 13 to include the second groove structure 132 corresponding to the second protrusion structure 122, the thickness of the first substrate 10 at the position (e.g., the second position B) of the second protrusion structure 122 is reduced, and since the light absorption rate of the first substrate 10 is greater than that of the second substrate 11, the reduction of the thickness of the first substrate 10 helps to reduce the light absorption rate of the growth substrate at the position of the second protrusion structure 122, so as to reduce the difference of the light absorption rates of the growth substrate at the position (e.g., the second position B) of the second protrusion structure 122 and at other positions (e.g., the first position a), so as to reduce the difference of the laser energies of the growth substrate at different positions when performing the laser lift-off process, improve the uniformity of the laser energies at the interface between the growth substrate and the light emitting diode, and reduce the probability of the light emitting diode damage, the laser lift-off yield is improved.
It should be noted that, the second protrusion structures 122 and the second groove structures 132 are correspondingly disposed, that is, along a direction perpendicular to the first substrate 10, the second protrusion structures 122 and the second groove structures 132 are at least partially overlapped, for example, as shown in fig. 3, a vertical projection of the second protrusion structures 122 on the first substrate 10 coincides with a vertical projection of the second groove structures 132 on the first substrate 10, so that the first substrate 10 and the second substrate 11 better cooperate with each other to reduce a difference in light absorption rate of the growth substrate at different positions, and a person skilled in the art may dispose the overlapped positions of the second protrusion structures 122 and the second groove structures 132 according to actual requirements, which is not specifically limited in the embodiment of the present invention.
Fig. 4 is a schematic structural diagram of another growth substrate according to an embodiment of the present invention, and as shown in fig. 4, optionally, the light absorption rate of the first substrate 10 is smaller than that of the second substrate 11.
As a possible implementation, the light absorption rate of the first substrate 10 may be set to be smaller than that of the second substrate 11, so as to improve the design flexibility of the first substrate 10 and the second substrate 11, and the setting may be performed by a person skilled in the art according to actual needs.
With continued reference to fig. 4, optionally, the thickness of the second substrate 11 at the first location a is greater than the thickness of the second substrate 11 at the second location B.
In this embodiment, as shown in fig. 4, taking the light absorption rate of the first substrate 10 as an example smaller than that of the second substrate 11, since the light absorption rate of the second substrate 11 is larger, the thickness of the second substrate 11 at the first position a is larger than that of the second substrate 11 at the second position B, so as to increase the light absorption rate of the growth substrate at the first position a, thereby compensating for the light absorption of the growth substrate at the first position a, which is lost due to the smaller thickness, and reducing the difference in light absorption amount of the growth substrate at the first position a and the second position B, so that when performing the laser lift-off process, the difference in laser energy of the growth substrate at different positions is reduced, the uniformity of laser energy at the interface between the growth substrate and the light emitting diode is improved, the probability of damage of the light emitting diode is reduced, and the yield of the laser lift-off is improved.
With continued reference to fig. 4, optionally, the first three-dimensional pattern 12 includes a third groove structure 123, the second three-dimensional pattern 13 includes a fourth groove structure 133, the third groove structure 123 is disposed corresponding to the fourth groove structure 133, and a depth of the third groove structure 123 is smaller than a depth of the fourth groove structure 133.
Specifically, as shown in fig. 4, the first three-dimensional pattern 12 includes third groove structures 123, and the number and the arrangement of the third groove structures 123 may be set according to actual requirements, which is not limited in the embodiment of the present invention.
As shown in fig. 4, a light emitting diode is grown on the side of the second substrate 11 away from the first substrate 10, the light emitting surface of the light emitting diode directly contacts the third groove structure 123 to form a protrusion structure complementary to the third groove structure 123, and the protrusion structure makes the light emitting surface of the light emitting diode uneven, so as to improve the problem that the light generated by the light emitting diode is totally reflected at the interface between the light emitting surface of the light emitting diode and the air due to the large refractive index of the light emitting diode material, thereby improving the light emitting efficiency of the light emitting diode.
With continued reference to fig. 4, the thickness of the growth substrate at the third groove structure 123 is significantly reduced, so as to reduce the light absorption rate of the growth substrate at the position (e.g., the first position a) of the third groove structure 123, which causes non-uniform laser energy at the interface between the growth substrate and the light emitting diode when performing the laser lift-off process.
In this embodiment, by disposing the second three-dimensional pattern 13 to include the fourth groove structure 133 corresponding to the third groove structure 123, and the depth of the fourth groove structure 133 is greater than the depth of the third groove structure 123, so as to increase the thickness of the second substrate 11 at the position (e.g., the first position a) of the third groove structure 123, since the light absorption rate of the second substrate 11 is greater than the light absorption rate of the first substrate 10, increasing the thickness of the second substrate 11 helps to increase the light absorption rate of the growth substrate at the position of the third groove structure 123, so as to compensate the light absorption at the position of the third groove structure 123, reduce the light absorption rate difference between the growth substrate at the position (e.g., the first position a) of the third groove structure 123 and other positions (e.g., the second position B), and thus reduce the laser energy difference between the growth substrate at different positions when performing the laser lift-off process, the laser energy uniformity at the interface between the growth substrate and the light-emitting diode is improved, the probability of damage of the light-emitting diode is reduced, and the laser stripping yield is improved.
It should be noted that, the third groove structure 123 and the fourth groove structure 133 are correspondingly disposed, that is, the third groove structure 123 and the fourth groove structure 133 are at least partially overlapped in a direction perpendicular to the first substrate 10, for example, as shown in fig. 4, a vertical projection of the third groove structure 123 on the first substrate 10 is overlapped with a vertical projection of the fourth groove structure 133 on the first substrate 10, so that the first substrate 10 and the second substrate 11 better cooperate with each other to reduce a difference in light absorption rate of the growth substrate at different positions, and a person skilled in the art may set the overlapped position of the third groove structure 123 and the fourth groove structure 133 according to actual requirements, which is not specifically limited in the embodiment of the present invention.
Fig. 5 is a schematic structural diagram of another growth substrate according to an embodiment of the present invention, as shown in fig. 5, optionally, the first three-dimensional pattern 12 includes a third protrusion structure 124, the second three-dimensional pattern 13 includes a fourth protrusion structure 134, the third protrusion structure 124 and the fourth protrusion structure 134 are disposed correspondingly, and a height of the third protrusion structure 124 is smaller than a height of the fourth protrusion structure 134.
Specifically, as shown in fig. 5, the first three-dimensional pattern 12 includes third protrusion structures 124, and the number and the arrangement of the third protrusion structures 124 may be set according to actual requirements, which is not limited in the embodiment of the present invention.
As shown in fig. 5, a light emitting diode is grown on the side of the second substrate 11 away from the first substrate 10, and the light emitting surface of the light emitting diode directly contacts the third protrusion structure 124, so as to form a groove structure complementary to the third protrusion structure 124, and the groove structure makes the light emitting surface of the light emitting diode uneven, so as to improve the problem that the light generated by the light emitting diode is totally reflected at the interface between the light emitting surface of the light emitting diode and the air due to the large refractive index of the light emitting diode material, thereby improving the light emitting efficiency of the light emitting diode.
With continued reference to fig. 5, the thickness of the growth substrate at the third protruding structures 124 may be significantly increased, so as to increase the light absorption rate of the growth substrate at the positions (e.g., the second positions B) of the third protruding structures 124, and thus, the laser energy at the interface between the growth substrate and the light emitting diode may be non-uniform when the laser lift-off process is performed.
In the present embodiment, by disposing the second three-dimensional pattern 13 to include the fourth protruding structures 134 corresponding to the third protruding structures 124, and the height of the third protruding structures 124 is smaller than the height of the fourth protruding structures 134, so as to reduce the thickness of the second substrate 11 at the positions (e.g. the second position B) of the third protruding structures 124, since the light absorption rate of the second substrate 11 is greater than that of the first substrate 10, reducing the thickness of the second substrate 11 helps to reduce the light absorption rate of the growth substrate at the positions of the third protruding structures 124, so as to reduce the light absorption rate difference of the growth substrate at the positions (e.g. the second position B) and other positions (e.g. the first position a) of the third protruding structures 124, so that when performing the laser lift-off process, the laser energy difference of the growth substrate at different positions is reduced, and the laser energy uniformity at the interfaces between the growth substrate and the light emitting diode is improved, the probability of damage of the light emitting diode is reduced, and the laser stripping yield is improved.
It should be noted that, the third protruding structures 124 and the fourth protruding structures 134 are correspondingly disposed, that is, along a direction perpendicular to the first substrate 10, the third protruding structures 124 and the fourth protruding structures 134 at least partially overlap, for example, as shown in fig. 5, a perpendicular projection of the third protruding structures 124 on the first substrate 10 coincides with a perpendicular projection of the fourth protruding structures 134 on the first substrate 10, so that the first substrate 10 and the second substrate 11 better cooperate with each other to reduce a difference in light absorption rate of the growth substrate at different positions, and a person skilled in the art may dispose overlapping positions of the third protruding structures 124 and the fourth protruding structures 134 according to actual requirements, which is not specifically limited in the embodiment of the present invention.
It should be noted that, a person skilled in the art may arbitrarily set the shapes of the protrusion structure and the groove structure according to actual requirements, and the embodiment of the present invention does not limit this.
Illustratively, taking the case that the light absorption rate of the first substrate 10 is greater than that of the second substrate 11, and the first three-dimensional pattern 12 includes the first groove structures 121, and the second three-dimensional pattern 13 includes the first protrusion structures 131, as shown in fig. 1, the cross-sectional shape of the first groove structures 121 is an arc, and the cross-sectional shape of the first protrusion structures 131 is an arc. Alternatively, fig. 6 is a schematic structural diagram of another growth substrate according to an embodiment of the present invention, and as shown in fig. 6, a cross-sectional shape of the first groove structure 121 is rectangular, and a cross-sectional shape of the first protrusion structure 131 is rectangular. Alternatively, fig. 7 is a schematic structural diagram of another growth substrate according to an embodiment of the present invention, and as shown in fig. 7, a cross-sectional shape of the first groove structure 121 is a trapezoid, and a cross-sectional shape of the first protrusion structure 131 is a trapezoid. Still alternatively, fig. 8 is a schematic structural diagram of another growth substrate according to an embodiment of the present invention, and as shown in fig. 8, a cross-sectional shape of the first groove structure 121 is a triangle, and a cross-sectional shape of the first protrusion structure 131 is a triangle.
Similarly, the cross-sectional shapes of the second protrusion structures 122, the third groove structures 123, the third protrusion structures 124, the second groove structures 132, the fourth groove structures 133, and the fourth protrusion structures 134 may also be set to be arc-shaped, rectangular, trapezoidal, triangular, or any other shape, which is not limited in this embodiment of the present invention.
It should be noted that, those skilled in the art may also set the sizes of the above-mentioned protrusion structures (such as the second protrusion structure 122, the third protrusion structure 124, the first protrusion structure 131, and the fourth protrusion structure 134) and the groove structures (such as the first groove structure 121, the third groove structure 123, the second groove structure 132, and the fourth groove structure 133) according to practical requirements, for example, the height of the protrusion structures is set to be 1-5 μm, and the depth of the groove structures is set to be 1-5 μm, which is not limited by the embodiment of the present invention.
1-8, optionally, the thickness of the second substrate 11 at the first location A is D1, the thickness of the second substrate 11 at the second location B is D2, the thickness of the first substrate 10 at the first location A is D3, and the thickness of the first substrate 10 at the second location B is D4; the light absorptance of the first substrate 10 is α 3, and the light absorptance of the second substrate 11 is α 4; wherein, (D1 × α 4) + (D3 × α 3) ═ D2 × α 4) + (D4 × α 3).
Specifically, as shown in fig. 1 to 8, the light absorption rate of the first substrate 10 is α 3, the light absorption rate of the second substrate 11 is α 4, α 3 ≠ α 4, and the thickness of the first substrate 10 and the thickness of the second substrate 11 at different positions are adjusted such that the thickness D1 of the second substrate 11 at the first position a, the thickness D2 of the second substrate 11 at the second position B, the thickness D3 of the first substrate 10 at the first position a, and the thickness D4 of the first substrate 10 at the second position B satisfy (D1 × 4) + (D3 × α 3) (D2 × α 4) + (D4 × α 3), so that the light absorption rate of the growth substrate at the first position a is equal to the light absorption rate of the growth substrate at the second position B, even if the light absorption rates of the growth substrates at different thickness positions are consistent, and thus the laser lift-off thicknesses of the growth substrates tend to be consistent, the laser energy uniformity of the interface between the growth substrate and the light-emitting diode is ensured, and the laser stripping yield is improved.
1-8, optionally, the thickness of the second substrate 11 at the first location A is D1, the thickness of the second substrate 11 at the second location B is D2, the thickness of the first substrate 10 at the first location A is D3, and the thickness of the first substrate 10 at the second location B is D4; the light absorptance of the first substrate 10 is α 3, and the light absorptance of the second substrate 11 is α 4; wherein, (D1 · α 4) + (D3 · α 3) > (D2 · α 4) + (D4 · α 3).
Specifically, as shown in fig. 1 to 8, since the thickness of the growth substrate at the first position a is smaller than the thickness of the growth substrate at the second position B, when laser lift-off is performed, laser reaches the interface at the first position a first, so that the laser irradiation time of the interface at the first position a is longer, the vaporization energy at the interface is larger, and the light emitting diode is easily damaged; if the vaporization energy of the interface at the first position a is not too large, the vaporization energy of the interface at the second position B may be too small to completely peel off, and the material may remain. In the present embodiment, by adjusting the thicknesses of the first substrate 10 and the second substrate 11 at different positions, such that a thickness D1 of second substrate 11 at first location a, a thickness D2 of second substrate 11 at second location B, a thickness D3 of first substrate 10 at first location a, and a thickness D4 of first substrate 10 at second location B satisfy (D1 a 4) + (D3 a 3) > (D2 a 4) + (D4 a 3), so that the light absorption rate of the growth substrate at the first position a is greater than the light absorption rate of the growth substrate at the second position B, therefore, during laser stripping, the vaporization energy of the interface of the growth substrate at the first position A is reduced, the vaporization energy of the interface of the growth substrate at the second position B is improved, and the material residue of the light-emitting diode at the second position B is reduced while the vaporization energy of the interface at the first position A is not too large.
Alternatively, the first substrate 10 includes a sapphire substrate; the second substrate 11 includes a GaN substrate or a metal oxide substrate.
Specifically, the first substrate 10 may be a sapphire substrate, the process for growing the light emitting diode using the sapphire substrate is mature and easy to implement, and the sapphire substrate is a transparent substrate, so that laser can penetrate when the laser is stripped, thereby stripping the light emitting diode from the growth substrate. Further, by arranging the second substrate 11 to include a GaN substrate or a metal oxide substrate so that the light absorption rate of the second substrate 11 is different from that of the first substrate 10, the first substrate 10 and the second substrate 11 can cooperate with each other to modulate the light absorption rate at different positions of the growth substrate, and it is ensured that the light absorption amount α 1 of the growth substrate at the first position a and the light absorption amount α 2 of the growth substrate at the second position B satisfy | α 1- α 2|/α 2 < 20%.
The light absorption rate of the GaN substrate or the metal oxide can be modulated by a film forming process to make the light absorption rates of the first substrate 10 and the second substrate 11 meet design requirements, for example, the second substrate 11 is prepared on the first substrate 10 by using Atomic Layer Deposition (ALD), Chemical Vapor Deposition (CVD), or Atmospheric Pressure Chemical Vapor Deposition (APCVD) to form the second substrate 11 with different light absorption rates, which is not limited in the embodiment of the present invention.
In other embodiments, the first substrate 10 and the second substrate 11 may be made of other materials, and those skilled in the art can set the materials according to actual requirements, for example, the second substrate 11 is made of Al2O3Or other metal oxide materials, which are not limited in this embodiment of the invention.
Based on the same inventive concept, an embodiment of the present invention further provides a light emitting diode, fig. 9 is a schematic structural diagram of the light emitting diode according to the embodiment of the present invention, and as shown in fig. 9, the light emitting diode 14 according to the embodiment of the present invention is prepared by using the growth substrate according to any one of the embodiments, so that the light emitting diode 14 according to the embodiment of the present invention has the technical effects of the technical solutions according to any one of the embodiments, and the explanations of the structures and terms that are the same as or corresponding to the embodiments are not repeated herein.
Alternatively, as shown in fig. 9, the light emitting diode 14 includes a first type semiconductor 141, an active layer 142 and a second type semiconductor 143, the active layer 142 is located between the first type semiconductor 141 and the second type semiconductor 143, and a side of the first type semiconductor 141 away from the second type semiconductor 143 has a three-dimensional pattern 16.
As shown in fig. 2 and 9, the light emitting diode 14 grows from the side of the second substrate 11 of the growth substrate away from the first substrate 10, the surface of the first type semiconductor 141 away from the second type semiconductor 143 is used as the light emitting surface 15, and the surface of the first type semiconductor 141 away from the second type semiconductor 143 (i.e., the light emitting surface 15) directly contacts the first three-dimensional pattern 12, so that the surface of the first type semiconductor 141 away from the second type semiconductor 143 forms the three-dimensional pattern 16 complementary to the first three-dimensional pattern 12, thereby improving the problem of total reflection of light generated by the light emitting diode 14 at the interface between the light emitting surface 15 of the light emitting diode 14 and air due to the large refractive index of the material of the light emitting diode 14, and improving the light extraction efficiency of the light emitting diode 14.
With reference to fig. 9, optionally, the light emitting diode 14 further includes a first type electrode 144 and a second type electrode 145, the first type semiconductor 141 is electrically connected to the first type electrode 144, the second type semiconductor 143 is electrically connected to the second type electrode 145, and the first type electrode 144 and the second type electrode 145 are separated from each other. The first type semiconductor 141 may be an N-type semiconductor and the second type semiconductor 143 may be a P-type semiconductor, or the first type semiconductor 141 may be a P-type semiconductor and the second type semiconductor 143 may be an N-type semiconductor, which is not limited in the embodiments of the present invention.
With continued reference to fig. 9, optionally, the first-type electrode 144 and the second-type electrode 145 are both disposed on a side of the first-type semiconductor 141 close to the second-type semiconductor 143, so as to facilitate subsequent electrical connection with the array substrate.
With continued reference to fig. 9, optionally, the light emitting diode 14 further includes an insulating layer 146, where the insulating layer 146 is at least located between the first-type electrode 144 and the active layer 142, and between the first-type electrode 144 and the second-type semiconductor 143, so as to avoid short circuit between the layers in the light emitting diode 14 and ensure that the light emitting diode 14 can display normally.
Optionally, the light emitting diodes 14 comprise Micro-LEDs, Mini-LEDs or Nano-LEDs.
Wherein, the Micro-LED is an LED chip with the grain size of less than 100 microns, can realize a display screen with pixel particles of 0.05 mm or less, has very low power consumption, has better material stability and has no image residue. The Mini-LED is an LED chip with the grain size of between 100 and 1000 microns, when the Mini-LED is adopted, the yield is high, the special-shaped cutting characteristic is achieved, and the backlight form with a high curved surface can be formed by matching the Mini-LED with the flexible substrate, so that the color rendering property is better. The Nano-LED is an LED chip with the grain size of less than 1 micron, and a display panel adopting the Nano-LED has smaller size, brighter brightness and higher pixel density.
Based on the same inventive concept, an embodiment of the present invention further provides a method for manufacturing a light emitting diode, which is used for manufacturing any light emitting diode provided in the above embodiment, and the explanation of the same or corresponding structure and terms as those in the above embodiment is not repeated herein, and fig. 10 is a schematic flow chart of the method for manufacturing a light emitting diode provided in the embodiment of the present invention, as shown in fig. 10, the method includes:
s110, providing a growth substrate, wherein the growth substrate comprises a first substrate and a second substrate which are arranged in a stacked mode, the light absorption rates of the first substrate and the second substrate are different, one side, far away from the first substrate, of the second substrate comprises a first three-dimensional pattern, the thickness of the growth substrate at a first position is smaller than that of the growth substrate at a second position, the light absorption amount of the growth substrate at the first position is alpha 1, the light absorption amount of the growth substrate at the second position is alpha 2, and | alpha 1-alpha 2 |/alpha 2 < 20%.
Fig. 11 is a schematic structural diagram of a method for manufacturing a light emitting diode according to an embodiment of the present invention, and as shown in fig. 11, a growth substrate 110 is provided, where the growth substrate 110 includes a first substrate 10 and a second substrate 11 having different light absorptances, and the first substrate 10 is in direct contact with an upper surface and a lower surface of the second substrate 11, it should be noted that the light absorptance of the first substrate 10 and the second substrate 11 may be different, for example, the light absorptance of the first substrate 10 and the second substrate 11 is different for light with a specific wavelength.
Optionally, a side of the first substrate 10 close to the second substrate 11 includes a second three-dimensional pattern 13, a thickness of the first substrate 10 at the first position a is different from a thickness of the first substrate 10 at the second position B, a thickness of the second substrate 11 at the first position a is different from a thickness of the second substrate 11 at the second position B, and by modulating thicknesses of the first substrate 10 and the second substrate 11 at different positions, so that thicknesses of the first substrate 10 and the second substrate 11 at different positions of the growth substrate are different, a difference in light absorption amounts of the growth substrate at different positions is reduced, and it is ensured that a light absorption amount α 1 of the growth substrate at the first position a and a light absorption amount α 2 of the growth substrate at the second position B satisfy | α 1- α 2|/α 2 < 20%.
And S120, preparing the light emitting diode on the growth substrate.
With reference to fig. 11, the light emitting diode 14 is grown on the side of the second substrate 11 of the growth substrate 110 away from the first substrate 10, and the light emitting surface 15 of the light emitting diode 14 is located on the side of the light emitting diode 14 close to the second substrate 11, that is, the light emitting surface 15 of the light emitting diode 14 is directly contacted with the first three-dimensional pattern 12, so that the light emitting surface 15 of the light emitting diode 14 forms a three-dimensional pattern 16 complementary to the first three-dimensional pattern 12, thereby improving the problem that the light generated by the light emitting diode 14 is totally reflected at the interface between the light emitting surface 15 of the light emitting diode 14 and the air due to the large refractive index of the material of the light emitting diode 14, and further improving the light extraction efficiency of the light emitting diode 14.
With reference to fig. 11, optionally, the light emitting diode 14 includes a first type semiconductor 141, an active layer 142 and a second type semiconductor 143, a surface of the first type semiconductor 141 on a side away from the second type semiconductor 143 is used as the light emitting surface 15, and a surface of the first type semiconductor 141 on a side away from the second type semiconductor 143 (i.e., the light emitting surface 15) directly contacts the first three-dimensional pattern 12, so that a surface of the first type semiconductor 141 on a side away from the second type semiconductor 143 forms a three-dimensional pattern 16 complementary to the first three-dimensional pattern 12.
With reference to fig. 11, optionally, the light emitting diode 14 further includes a first type electrode 144 and a second type electrode 145, the first type semiconductor 141 is electrically connected to the first type electrode 144, the second type semiconductor 143 is electrically connected to the second type electrode 145, and the first type electrode 144 and the second type electrode 145 are separated from each other. The first type semiconductor 141 may be an N-type semiconductor and the second type semiconductor 143 may be a P-type semiconductor, or the first type semiconductor 141 may be a P-type semiconductor and the second type semiconductor 143 may be an N-type semiconductor, which is not limited in the embodiments of the present invention.
With continued reference to fig. 11, optionally, the first-type electrode 144 and the second-type electrode 145 are both disposed on a side of the first-type semiconductor 141 close to the second-type semiconductor 143, so as to facilitate subsequent electrical connection with the array substrate.
With continued reference to fig. 11, optionally, the light emitting diode 14 further includes an insulating layer 146, where the insulating layer 146 is at least located between the first-type electrode 144 and the active layer 142, and between the first-type electrode 144 and the second-type semiconductor 143, so as to avoid short circuit between the layers in the light emitting diode 14 and ensure that the light emitting diode 14 can display normally.
S130, illuminating one side of the growth substrate, which is far away from the light-emitting diode, so as to strip the light-emitting diode from the growth substrate.
With continued reference to fig. 11, light is applied to the side of the growth substrate 110 away from the light emitting diode 14 to strip the light emitting diode 14 from the growth substrate 110.
Alternatively, as shown in fig. 11, the irradiation includes irradiating the side of the growth substrate 110 away from the light emitting diode 14 with laser light 17, irradiating the interface between the growth substrate 110 and the light emitting diode 14 with the laser light 17 through the growth substrate 110, and separating the light emitting diode 14 and the growth substrate 110 by vaporization occurring when the material at the interface absorbs the laser energy to generate high temperature.
In the embodiment, since the growth substrate 110 includes the first substrate 10 and the second substrate 11 with different absorptances, and the first substrate 10 and the second substrate 11 cooperate with each other to modulate the light absorptance at different positions of the growth substrate 110, it is ensured that the light absorption amount α 1 of the growth substrate 110 at the first position a and the light absorption amount α 2 of the growth substrate at the second position B satisfy | α 1- α 2|/α 2 < 20%, when the light emitting diode 14 is peeled by the laser 17, the laser energy difference of the growth substrate 110 at different positions is reduced, the laser energy uniformity at the interface between the growth substrate 110 and the light emitting diode 14 is improved, the probability of damage to the light emitting diode 14 is reduced, and the laser peeling yield is improved.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (16)
1. The growth substrate is used for preparing a light-emitting diode and comprises a first substrate and a second substrate which are arranged in a stacked mode, wherein the light absorptivity of the first substrate is different from that of the second substrate;
the side, far away from the first substrate, of the second substrate comprises a first three-dimensional pattern;
a thickness of the growth substrate at a first location is less than a thickness of the growth substrate at a second location;
the light absorption amount of the growth substrate at the first position is α 1, the light absorption amount of the growth substrate at the second position is α 2, and | α 1- α 2|/α 2 < 20%.
2. The growth substrate of claim 1,
|α1-α2|/α2＜10％。
3. the growth substrate of claim 1,
one side of the first substrate, which is close to the second substrate, comprises a second three-dimensional pattern;
a thickness of the first substrate at the first location is different from a thickness of the first substrate at the second location, and a thickness of the second substrate at the first location is different from a thickness of the second substrate at the second location.
4. The growth substrate of claim 3, wherein the first substrate has a light absorption rate greater than a light absorption rate of the second substrate.
5. The growth substrate of claim 4,
the thickness of the first substrate at the first location is greater than the thickness of the first substrate at the second location.
6. The growth substrate of claim 4,
the first three-dimensional pattern comprises a first groove structure, the second three-dimensional pattern comprises a first protrusion structure, and the first groove structure and the first protrusion structure are arranged correspondingly.
7. The growth substrate of claim 4,
the first three-dimensional pattern comprises a second protruding structure, the second three-dimensional pattern comprises a second groove structure, and the second protruding structure and the second groove structure are arranged correspondingly.
8. The growth substrate of claim 3,
the first substrate has a light absorption rate less than that of the second substrate.
9. The growth substrate of claim 8,
the thickness of the second substrate at the first location is greater than the thickness of the second substrate at the second location.
10. The growth substrate of claim 8,
the first three-dimensional pattern comprises a third groove structure, the second three-dimensional pattern comprises a fourth groove structure, the third groove structure and the fourth groove structure are correspondingly arranged, and the depth of the third groove structure is smaller than that of the fourth groove structure.
11. The growth substrate of claim 8,
the first three-dimensional pattern comprises a third protruding structure, the second three-dimensional pattern comprises a fourth protruding structure, the third protruding structure and the fourth protruding structure are arranged correspondingly, and the height of the third protruding structure is smaller than that of the fourth protruding structure.
12. The growth substrate of claim 1,
the second substrate has a thickness D1 at the first location, the second substrate has a thickness D2 at the second location, the first substrate has a thickness D3 at the first location, the first substrate has a thickness D4 at the second location; the light absorptivity of the first substrate is alpha 3, and the light absorptivity of the second substrate is alpha 4;
wherein, (D1 × α 4) + (D3 × α 3) ═ D2 × α 4) + (D4 × α 3).
13. The growth substrate of claim 1,
the second substrate has a thickness D1 at the first location, the second substrate has a thickness D2 at the second location, the first substrate has a thickness D3 at the first location, the first substrate has a thickness D4 at the second location; the light absorptivity of the first substrate is alpha 3, and the light absorptivity of the second substrate is alpha 4;
wherein, (D1 · α 4) + (D3 · α 3) > (D2 · α 4) + (D4 · α 3).
14. The growth substrate of claim 1,
the first substrate comprises a sapphire substrate;
the second substrate includes a GaN substrate or a metal oxide substrate.
15. A light-emitting diode is characterized in that,
the light emitting diode is prepared from the growth substrate of any one of claims 1-14;
the light emitting diode comprises a first type semiconductor, an active layer and a second type semiconductor, wherein the active layer is located between the first type semiconductor and the second type semiconductor, and one side, far away from the second type semiconductor, of the first type semiconductor is provided with a three-dimensional pattern.
16. A method for producing a light-emitting diode according to claim 15, comprising:
providing a growth substrate, wherein the growth substrate comprises a first substrate and a second substrate which are arranged in a stacked mode, the light absorption rates of the first substrate and the second substrate are different, one side, far away from the first substrate, of the second substrate comprises a first three-dimensional pattern, the thickness of the growth substrate at a first position is smaller than that of the growth substrate at a second position, the light absorption amount of the growth substrate at the first position is alpha 1, the light absorption amount of the growth substrate at the second position is alpha 2, and | alpha 1-alpha 2 |/alpha 2 < 20%;
preparing the light emitting diode on the growth substrate;
and illuminating one side of the growth substrate, which is far away from the light-emitting diode, so as to strip the light-emitting diode from the growth substrate.
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| CN211125684U (en) * | 2019-10-08 | 2020-07-28 | 东莞市中图半导体科技有限公司 | Patterned composite substrate and L ED epitaxial wafer |
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