CN112652613A - Multi-channel micro-system packaging assembly with three-dimensional stacking form and manufacturing method thereof - Google Patents
Multi-channel micro-system packaging assembly with three-dimensional stacking form and manufacturing method thereof Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000919 ceramic Substances 0.000 claims abstract description 188
- 229910052751 metal Inorganic materials 0.000 claims abstract description 126
- 239000002184 metal Substances 0.000 claims abstract description 126
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 238000003466 welding Methods 0.000 claims abstract description 54
- 230000005540 biological transmission Effects 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims description 47
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 40
- 229910052573 porcelain Inorganic materials 0.000 claims description 24
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 21
- 229910052759 nickel Inorganic materials 0.000 claims description 20
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- 238000000498 ball milling Methods 0.000 claims description 8
- 238000005266 casting Methods 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 8
- 238000004080 punching Methods 0.000 claims description 8
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 7
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- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- 238000005219 brazing Methods 0.000 claims description 4
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- 229910052802 copper Inorganic materials 0.000 claims description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to a multi-channel micro-system packaging assembly with a three-dimensional stacking form and a manufacturing method thereof, wherein the multi-channel micro-system packaging assembly comprises a shell and a ceramic substrate embedded in the shell; the shell comprises a ceramic base, a plurality of hollow cavities arranged in parallel are arranged in the ceramic base, step-shaped structures are arranged at four side wall positions in each hollow cavity, and BGA bonding pads are arranged on the surfaces of the steps; erecting a metal frame on the surface of the ceramic base, and welding a metal heat sink at the bottom of the ceramic base; arranging a power chip on the surface of the metal heat sink; a transmission line is arranged on the ceramic base, a lead welding area is formed at the position, close to the outer side wall of the metal frame, of the transmission line, and a bonding finger is arranged at the position, close to the inner side wall of the metal frame, of the transmission line; the surface or the bottom surface of the ceramic substrate is provided with a plurality of cavities, the surface of the ceramic substrate is also provided with BGA bonding pads, and the BGA bonding pads are matched with the BGA bonding pads on the surface of the step; the invention can realize high integration, excellent microwave performance and high reliability of the assembly.
Description
Technical Field
The invention relates to a multi-channel micro-system packaging assembly in a three-dimensional stacking form and a manufacturing method thereof, and belongs to the field of radio frequency micro-system packaging.
Background
The radio frequency micro-system component generally has two typical packaging forms, one is that a PCB is matched with a metal shell, the manufacturing difficulty of the form is lower, and the radio frequency micro-system component is a more traditional packaging form; the packaging form is large in size generally, forms a bottleneck for the design and production of a complex structure, is limited in application, and is less in application at the present stage. The other is the most common low temperature co-fired ceramic (LTCC) matched aluminum-based composite metal material shell at present; the LTCC substrate is low in dielectric loss and high in hardness, can meet complex wiring requirements, has the condition of realizing multi-channel transmission, is the most common radio frequency micro-system component packaging form at home and abroad at present, an aluminum-based composite metal material shell provides a signal input/output channel, a heat dissipation channel, a mechanical support and a protected working environment for the component, the packaging form is usually large in size, the AlN substrate, an inverted single-chip microwave integrated circuit (MMIC) and a hair button are adopted to realize packaging of the radio frequency micro-system component, but the hair button needs good accurate alignment and assembly, the practicability is low, and the reliability is low.
In recent years, attention has been paid to a three-dimensional package assembly, and it has been reported that vertical stacking of multi-stage LTCC substrates is realized by a BGA structure of the LTCC substrates themselves inside a metal case. Although the packaging volume of the packaging structure is reduced to a certain extent, the microwave signal in the metal shell needs to be transmitted out by virtue of the SMT coaxial connector, so that the overall packaging volume of the micro-system is still large, and the overall packaging size is difficult to effectively reduce.
As the requirements of three-dimensional integrated applications become more stringent, rf microsystem components must be developed toward higher integration and miniaturization. Compared with the LTCC technology, the high temperature co-fired ceramic (HTCC) technology has higher reliability and lower cost, and can realize higher integration level and miniaturization. The radio frequency micro-system three-dimensional packaging shell of the multilayer BGA pad area array structure based on the HTCC technology can realize richer packaging forms and has wider application scenes; by designing a multi-cavity multi-channel structure in the appearance, a metal shell structure can be omitted, and further miniaturization of the radio frequency micro-system component is realized. The multilevel ceramic substrate is stacked on the basis of the HTCC shell, so that the good microwave transmission performance of the assembly can be realized, the volume of the assembly is effectively reduced, and the overall reliability of the assembly is improved. Therefore, the HTCC-based radio frequency microsystem three-dimensional packaging technology will become an important direction for future development in the field of microsystem packaging, and a radio frequency microsystem three-dimensional packaging assembly is urgently needed, which can effectively solve the problems existing in the field of radio frequency microsystem three-dimensional packaging assemblies in the aspects of integration level, microwave performance, reliability and the like.
Disclosure of Invention
The invention provides a multi-channel micro-system packaging assembly with a three-dimensional stacking form and a manufacturing method thereof, which can realize high integration level, excellent microwave performance and high reliability of the assembly.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a multi-channel micro-system packaging assembly with a three-dimensional stacking form is in a ceramic packaging form and comprises a shell and a ceramic substrate embedded in the shell;
the shell comprises a ceramic base, a plurality of hollow cavities arranged in parallel are arranged in the ceramic base, step-shaped structures are arranged at four side wall positions in each hollow cavity, and BGA bonding pads are arranged on the surfaces of the steps;
erecting a metal frame on the surface of the ceramic base, welding a metal heat sink at the bottom of the ceramic base, and covering the bottom surface of the whole ceramic base by the metal heat sink;
arranging a power chip on the surface of the metal heat sink in each hollow cavity;
a transmission line is arranged on the ceramic base and comprises a strip line, and two ends of the strip line are connected with the microstrip line;
a lead welding area is formed at the position, close to the outer side wall of the metal frame, of the transmission line and used for welding a metal lead, and bonding fingers are arranged at the position, close to the inner side wall of the metal frame, of the transmission line and used for bonding gold wires;
the ceramic substrate is embedded in the hollow cavity, a plurality of cavities are formed in the surface or the bottom surface of the ceramic substrate, BGA bonding pads are also arranged on the surface of the ceramic substrate, and the BGA bonding pads on the ceramic substrate are matched with the BGA bonding pads on the surface of the step;
as a further preferred aspect of the present invention, the metal lead is drawn in a flat-out manner, and the width dimension ratio range of each portion inside the structure is a microstrip line: strip line: microstrip line ═ (0.25mm-0.35 mm): (0.10mm-0.25 mm): (0.25mm-0.35 mm);
as a further preferred aspect of the present invention, the cross section of the hollow cavity is square, at least one step is disposed in each hollow cavity, and the end face warpage of the step is less than 1 μm/mm;
BGA bonding pads are distributed on the step surface of the hollow cavity body, the diameter range of the bonding pads is 0.3mm-0.5mm, and the distance between every two adjacent bonding pads is smaller than 1.5 mm;
the bonding fingers of the bonding pad, the metal lead of the shell and the hollow cavity realize electrical connectivity through internal wiring of the ceramic base;
a plurality of bonding fingers which are arranged in parallel are respectively arranged in four directions of the surface of the step in the hollow cavity body to form row bonding fingers for bonding gold wires;
the microstrip line close to the lead welding area in the transmission line is connected with the metal lead, and the microstrip line close to the bonding finger in the transmission line is communicated with the gold wire;
in a further preferred embodiment of the present invention, the ceramic base is made of alumina ceramic or aluminum nitride ceramic as a transmission medium;
the metal heat sink is made of high-thermal-conductivity materials, including tungsten copper or molybdenum copper or copper-molybdenum copper-copper or diamond copper;
the metal lead and the metal frame are made of iron-nickel alloy;
the manufacturing method of the three-dimensional stacked multi-channel micro-system packaging assembly comprises the following steps:
firstly, batching according to a ceramic formula, carrying out ball milling, and casting a raw ceramic band with the thickness range of 0.20mm-0.35mm for later use;
secondly, punching, filling holes, printing metallized patterns, punching cavities, laminating and cutting the stacked green ceramic tapes by adopting a high-temperature co-fired multilayer ceramic process, wherein the preparation method of the ceramic base is prepared by adopting an alumina or aluminum nitride ceramic HTCC process, and the specific forming method comprises the following steps:
step 21, preparing an aluminum plate, arranging a positioning pin on the aluminum plate, wherein the positioning pin is consistent with the positioning hole at the edge of the raw ceramic tape in position, preparing a hollow metal sheet, the hollow pattern on the hollow metal sheet is consistent with the cavity pattern of the raw ceramic tape at the uppermost layer, and arranging a positioning hole matched with the positioning pin at the edge of the hollow metal sheet;
step 22, opening cavities in a chip area and a lead welding area of a plurality of layers of green ceramic tapes, so that the chip area and the lead welding area have hollow cavity figures meeting design requirements;
laying a sheet of a Malan film on an aluminum plate, sequentially overlapping a plurality of layers of raw porcelain strips passing through the cavity on a positioning pin of the aluminum plate from bottom to top, laying a hollow metal sheet on the raw porcelain strip positioned on the topmost layer, and enabling the hollow metal sheet to coincide with the hollow cavity body pattern positioned on the topmost layer raw porcelain strip;
24, arranging a soft silica gel pad on the surface of the hollow metal sheet, wherein the thickness of the silica gel pad is greater than or equal to the total thickness of the multilayer green ceramic tape;
25, placing the whole body obtained in the 24 th step into a plastic packaging bag, performing vacuum packaging and laminating treatment, and performing hot pressing at the pressure of 100-300psi to obtain a whole stack of green porcelain with a hollow cavity structure, and performing green cutting on the whole stack of green porcelain to obtain an independent cavity-contained green porcelain base;
thirdly, sintering and leveling the green ceramic base with the cavity according to a ceramic sintering process;
fourthly, nickel plating is carried out on the metal area on the surface of the sintered and leveled ceramic base;
fifthly, annealing the metal frame at 800-1200 ℃ under the condition of hydrogen atmosphere, cooling along with the furnace, and plating nickel on the surface of the metal heat sink, wherein the thickness of the nickel layer is 1.5-4.0 mu m;
sixthly, brazing the metal frame, the ceramic base, the metal lead and the metal heat sink together through silver-copper solder under the atmosphere condition of 790 +/-10 ℃ to form a semi-finished product of the shell;
seventhly, electroplating a nickel layer and a gold layer on the surface metal area of the semi-finished shell, wherein the thickness range of the nickel layer is 2.5-6.0 mu m, the thickness range of the gold layer on the surface of the BGA bonding pad is 0.1-0.3 mu m, and the thickness range of the gold layer on other metal areas on the surface of the shell is 1.3-5.7 mu m;
as a further preferred aspect of the present invention, the process for manufacturing a ceramic substrate specifically includes the steps of:
step I, mixing materials according to a ceramic formula, carrying out ball milling, and casting a raw ceramic chip with the thickness of 0.10mm-0.35mm for later use;
step II, adopting a high-temperature co-fired multilayer ceramic process or a low-temperature co-fired multilayer ceramic process to punch, fill and print a metalized pattern on the standby green ceramic chip;
step III, processing the green ceramic chip obtained in the step II according to the method for processing the ceramic base in the step II, and enabling the surface or the bottom surface of the green ceramic chip to be provided with a plurality of cavities;
step IV, cutting and sintering the green ceramic chip subjected to cavity opening to obtain a ceramic substrate;
v, performing nickel gold plating on the surface of the ceramic substrate by adopting a chemical method;
as a further preferred aspect of the present invention, the step of bonding a chip in the ceramic substrate cavity and sealing the chip comprises the following steps:
secondly, welding the chip to the inner bottom of the cavity of the ceramic substrate in a reflow soldering mode;
welding the metal cover plate to a sealing area at the edge of the opening of the cavity through a low-temperature Korean material;
as a further preferred aspect of the present invention, the soldering of the power chip and the ceramic substrate into the housing specifically includes the following steps:
welding a power chip to the surface of a metal heat sink positioned in the hollow cavity, and realizing the communication between the power chip and the shell through gold wire bonding;
secondly, respectively welding a plurality of ceramic substrates to the surface matching positions of the hollow cavities in the shell, and connecting the bonding pads at the signal transmission ends of the ceramic substrates with the bonding pads at the corresponding positions of the hollow cavities through BGA (ball grid array) welding balls;
as a further preferred aspect of the present invention, a metal cover plate is covered on the top of the metal frame to seal the metal frame, and the sealing process includes parallel sealing, solder welding and laser welding.
Through the technical scheme, compared with the prior art, the invention has the following beneficial effects:
1. the shell is internally provided with a plurality of hollow cavities, each hollow cavity corresponds to one packaging channel, and the more the number of the packaging channels is, the higher the integration level of the assembly is;
2. the hollow cavities in the shell are presented in a parallel arrangement mode, so that the consistency of signal transmission quality of different channels can be better controlled;
3. according to the invention, the ceramic substrate is made into a multi-cavity structure which can be locally sealed, so that more chips can be packaged, and more channel functions can be realized;
4. the shell comprises a plurality of hollow cavity bodies, and the bottom of each hollow cavity body is pasted with a metal heat sink, so that a good heat dissipation channel can be provided for a high-power chip, and the heat dissipation requirement of a power chip with dozens of watts and even hundreds of watts can be met;
5. the whole packaging assembly has excellent microwave transmission performance and heat dissipation performance, and meanwhile, the packaging integration level and reliability are greatly improved.
Drawings
The invention is further illustrated with reference to the following figures and examples.
FIG. 1 is a schematic structural diagram of a preferred embodiment provided by the present invention;
fig. 2 is a schematic structural diagram of row bonding fingers in the preferred embodiment of the present invention.
In the figure: the structure comprises a metal cover plate 1, a metal frame 2, a ceramic base 3, a metal lead 4, a metal heat sink 5, a ceramic substrate 6, a BGA solder ball 7, a power chip 8 and a bonding finger 9.
Detailed Description
The present invention will now be described in further detail with reference to the accompanying drawings. These drawings are simplified schematic views illustrating only the basic structure of the present invention in a schematic manner, and thus show only the constitution related to the present invention.
Based on the problems existing in the field of radio frequency micro-system three-dimensional packaging assemblies provided by the prior art in terms of integration level, microwave performance, reliability and the like, the application aims to provide a multi-channel micro-system packaging assembly in a three-dimensional stacking form, which is in a ceramic packaging form and comprises a shell and a ceramic substrate 6 embedded in the shell; the shell comprises a ceramic base 3, a plurality of hollow cavities which are arranged in parallel are arranged in the ceramic base, each hollow cavity corresponds to one packaging channel, the number of the packaging channels of the component is increased, the corresponding integration level is increased, the hollow cavities are arranged in parallel, and the arrangement mode can control the consistency of signal transmission quality of different packaging channels; step-shaped structures are arranged at four side wall positions in each hollow cavity, and BGA bonding pads are distributed on the surfaces of the steps; erecting a metal frame 2 on the surface of the ceramic base, and sealing the metal frame, wherein the sealing process comprises parallel sealing welding, solder welding and laser welding; the bottom of the ceramic base is welded with a metal heat sink 5, and the metal heat sink covers the bottom surface of the whole ceramic base; arranging a power chip 8 on the surface of the metal heat sink in each hollow cavity; a transmission line is arranged on the ceramic base and comprises a strip line, and the two ends of the strip line are connected with a microstrip line to form a microstrip line-strip line-microstrip line structure; a lead welding area is formed at the position, close to the outer side wall of the metal frame, of the transmission line and used for welding the metal lead 4, and a bonding finger 9 is arranged at the position, close to the inner side wall of the metal frame, of the transmission line and used for bonding a gold wire; the ceramic substrate is embedded in the hollow cavity, the surface or the bottom surface of the ceramic substrate is provided with a plurality of cavities, the surface of the ceramic substrate is also provided with a BGA (ball grid array) pad, and the BGA pad on the ceramic substrate is matched with the BGA pad on the surface of the step.
For better assurance transmission effect, this application has still made the restriction to the mode of drawing forth of metal lead, and its mode of drawing forth is the formula of putting down, has made the restraint to transmission line structure size simultaneously, and the width size proportional range of its inside each part is the microstrip line: strip line: microstrip line ═ (0.25mm-0.35 mm): (0.10mm-0.25 mm): (0.25mm-0.35 mm).
The cross section of each hollow-out cavity body is square, at least one layer of step is arranged in each hollow-out cavity body, and the end face warping degree of each step is smaller than 1 mu m/mm; BGA bonding pads are distributed on the step surface of the hollow cavity body, the diameter range of the bonding pads is 0.3mm-0.5mm, and the distance between every two adjacent bonding pads is smaller than 1.5 mm; the bonding fingers of the bonding pad, the metal lead of the shell and the hollow cavity realize electrical connectivity through internal wiring of the ceramic base;
as shown in fig. 2, it can be seen that a plurality of bonding fingers arranged in parallel are respectively arranged in four directions on the surface of the step in the hollow cavity to form row bonding fingers for bonding gold wires; the microstrip line close to the lead welding area in the transmission line is connected with the metal lead, and the microstrip line close to the bonding finger in the transmission line is communicated with the gold wire.
The ceramic base adopts alumina ceramics or aluminum nitride ceramics as a transmission medium; the metal heat sink is made of a high-thermal-conductivity material, the size of the metal heat sink is matched with the bottom surface of the ceramic base, and the metal heat sink comprises tungsten copper or molybdenum copper or copper-molybdenum copper-copper or diamond copper; the metal lead and the metal frame are made of iron-nickel alloy.
The application further provides a manufacturing method based on the multi-channel micro-system packaging assembly with the three-dimensional stacking form, wherein the manufacturing method describes the manufacturing process of different components,
the manufacturing method of the shell specifically comprises the following steps:
firstly, batching according to a ceramic formula, carrying out ball milling, and casting a raw ceramic band with the thickness range of 0.20mm-0.35mm for later use;
secondly, punching, filling holes, printing metallized patterns, punching cavities, laminating and cutting the stacked green ceramic tapes by adopting a high-temperature co-fired multilayer ceramic process, wherein the preparation method of the ceramic base is prepared by adopting an alumina or aluminum nitride ceramic HTCC process, and the specific forming method comprises the following steps:
step 21, preparing an aluminum plate, arranging a positioning pin on the aluminum plate, wherein the positioning pin is consistent with the positioning hole at the edge of the raw ceramic tape in position, preparing a hollow metal sheet, the hollow pattern on the hollow metal sheet is consistent with the cavity pattern of the raw ceramic tape at the uppermost layer, and arranging a positioning hole matched with the positioning pin at the edge of the hollow metal sheet;
step 22, opening cavities in a chip area and a lead welding area of a plurality of layers of green ceramic tapes, so that the chip area and the lead welding area have hollow cavity figures meeting design requirements;
laying a sheet of a Malan film on an aluminum plate, sequentially overlapping a plurality of layers of raw porcelain strips passing through the cavity on a positioning pin of the aluminum plate from bottom to top, laying a hollow metal sheet on the raw porcelain strip positioned on the topmost layer, and enabling the hollow metal sheet to coincide with the hollow cavity body pattern positioned on the topmost layer raw porcelain strip;
24, arranging a soft silica gel pad on the surface of the hollow metal sheet, wherein the thickness of the silica gel pad is greater than or equal to the total thickness of the multilayer green ceramic tape;
25, placing the whole body obtained in the 24 th step into a plastic packaging bag, performing vacuum packaging and laminating treatment, and performing hot pressing at the pressure of 100-300psi to obtain a whole stack of green porcelain with a hollow cavity structure, and performing green cutting on the whole stack of green porcelain to obtain an independent cavity-contained green porcelain base;
thirdly, sintering and leveling the green ceramic base with the cavity according to a ceramic sintering process;
fourthly, nickel plating is carried out on the metal area on the surface of the sintered and leveled ceramic base;
fifthly, annealing the metal frame at 800-1200 ℃ under the condition of hydrogen atmosphere, cooling along with the furnace, and plating nickel on the surface of the metal heat sink, wherein the thickness of the nickel layer is 1.5-4.0 mu m;
sixthly, brazing the metal frame, the ceramic base, the metal lead and the metal heat sink together through silver-copper solder under the atmosphere condition of 790 +/-10 ℃ to form a semi-finished product of the shell;
and seventhly, electroplating a nickel layer and a gold layer on the surface metal area of the semi-finished shell, wherein the thickness range of the nickel layer is 2.5-6.0 mu m, the thickness range of the gold layer on the surface of the BGA bonding pad is 0.1-0.3 mu m, and the thickness range of the gold layer on other metal areas on the surface of the shell is 1.3-5.7 mu m.
The manufacturing process of the ceramic substrate specifically comprises the following steps:
step I, mixing materials according to a ceramic formula, carrying out ball milling, and casting a raw ceramic chip with the thickness of 0.10mm-0.35mm for later use;
step II, adopting a high-temperature co-fired multilayer ceramic process or a low-temperature co-fired multilayer ceramic process to punch, fill and print a metalized pattern on the standby green ceramic chip;
step III, processing the green ceramic chip obtained in the step II according to the method for processing the ceramic base in the step II, and enabling the surface or the bottom surface of the green ceramic chip to be provided with a plurality of cavities;
step IV, cutting and sintering the green ceramic chip subjected to cavity opening to obtain a ceramic substrate;
and V, performing nickel gold plating on the surface of the ceramic substrate by adopting a chemical method.
And thirdly, welding a chip in the ceramic substrate cavity and sealing the chip, and specifically comprises the following steps:
welding a chip to the inner bottom of a cavity of a ceramic substrate in a reflow soldering manner;
secondly, weld metal decking 1 to the sealed area at cavity opening part edge through the korea material of low temperature.
Welding the power chip and the ceramic substrate into the shell, and specifically comprising the following steps:
welding a power chip to the surface of a metal heat sink positioned in the hollow cavity, and realizing the communication between the power chip and the shell through gold wire bonding;
and secondly, respectively welding a plurality of ceramic substrates to the surface matching positions of the hollow cavities in the shell, and connecting the bonding pads at the signal transmission ends of the ceramic substrates with the bonding pads at the corresponding positions of the hollow cavities through BGA (ball grid array) solder balls 7.
Based on the above components and the manufacturing method, the preferred embodiment shown in fig. 1 is provided, in the preferred embodiment, four hollow cavities are arranged side by side, that is, four packaging channels are integrated, two layers of steps are arranged in the hollow cavities, BGA pads are arranged on the surfaces of the steps, that is, the ceramic substrates are stacked on the surfaces of the steps, one cavity is respectively arranged on the surface and the bottom of each ceramic substrate, and the manufacturing process is explained for the preferred embodiment shown in fig. 1;
the manufacturing method of the shell specifically comprises the following steps:
firstly, batching according to a ceramic formula, carrying out ball milling, and casting a raw ceramic band with the thickness range of 0.25mm for later use;
secondly, punching, filling holes, printing metallized patterns, punching cavities, laminating and cutting the stacked green ceramic tapes by adopting a high-temperature co-fired multilayer ceramic (HTCC) process, wherein the preparation method of the ceramic base adopts an alumina or aluminum nitride ceramic HTCC process for preparation, and the specific forming method comprises the following steps:
step 21, preparing an aluminum plate, arranging a positioning pin on the aluminum plate, wherein the positioning pin is consistent with the positioning hole at the edge of the raw ceramic tape in position, preparing a hollow metal sheet, the hollow pattern on the hollow metal sheet is consistent with the cavity pattern of the raw ceramic tape at the uppermost layer, and arranging a positioning hole matched with the positioning pin at the edge of the hollow metal sheet;
step 22, opening cavities in a chip area and a lead welding area of a plurality of layers of green ceramic tapes, so that the chip area and the lead welding area have hollow cavity figures meeting design requirements;
laying a sheet of a Malan film on an aluminum plate, sequentially overlapping a plurality of layers of raw porcelain strips passing through the cavity on a positioning pin of the aluminum plate from bottom to top, laying a hollow metal sheet on the raw porcelain strip positioned on the topmost layer, and enabling the hollow metal sheet to coincide with the hollow cavity body pattern positioned on the topmost layer raw porcelain strip;
24, arranging a soft silica gel pad on the surface of the hollow metal sheet, wherein the thickness of the silica gel pad is greater than or equal to the total thickness of the multilayer green ceramic tape;
step 25, placing the whole body obtained in the step 24 in a plastic packaging bag, performing vacuum packaging and laminating treatment, and performing hot pressing at 300psi to obtain a whole stack of green porcelain with a hollow cavity structure, and performing green cutting on the whole stack of green porcelain to obtain an independent cavity-containing green porcelain base;
thirdly, sintering and leveling the green ceramic base with the cavity according to a ceramic sintering process;
fourthly, nickel plating is carried out on the metal area on the surface of the sintered and leveled ceramic base;
fifthly, annealing the metal frame at 1050 ℃ in hydrogen atmosphere, cooling along with the furnace, and plating nickel on the surface of the metal heat sink, wherein the thickness of the nickel layer is 1.5 mu m;
sixthly, brazing the metal frame, the ceramic base, the metal lead and the metal heat sink together through silver-copper solder under the atmosphere condition of 790 +/-10 ℃ to form a semi-finished product of the shell;
and seventhly, electroplating a nickel layer and a gold layer on the surface metal area of the semi-finished shell, wherein the thickness range of the nickel layer is 2.5-6.0 mu m, the thickness range of the gold layer on the surface of the BGA bonding pad is 0.1-0.3 mu m, and the thickness range of the gold layer on other metal areas on the surface of the shell is 1.3-5.7 mu m.
The manufacturing process of the ceramic substrate specifically comprises the following steps:
step I, mixing materials according to a ceramic formula, carrying out ball milling, and casting a raw ceramic chip with the thickness of 0.20mm for later use;
step II, adopting a high-temperature co-fired multilayer ceramic process or a low-temperature co-fired multilayer ceramic process to punch, fill and print a metalized pattern on the standby green ceramic chip;
step III, processing the green ceramic chip obtained in the step II according to the method for processing the ceramic base in the step II, and enabling the surface or the bottom surface of the green ceramic chip to be provided with a plurality of cavities;
step IV, cutting and sintering the green ceramic chip subjected to cavity opening to obtain a ceramic substrate;
and V, performing nickel gold plating on the surface of the ceramic substrate by adopting a chemical method.
And thirdly, welding a chip in the ceramic substrate cavity and sealing the chip, and specifically comprises the following steps:
welding a chip to the inner bottom of a cavity of a ceramic substrate in a reflow soldering manner;
and secondly, welding the metal cover plate to a sealing area at the edge of the opening of the cavity through low-temperature Korean materials.
Welding the power chip and the ceramic substrate into the shell, and specifically comprising the following steps:
welding a power chip to the surface of a metal heat sink positioned in the hollow cavity, and realizing the communication between the power chip and the shell through gold wire bonding;
and secondly, respectively welding a plurality of ceramic substrates to the surface matching positions of the hollow cavities in the shell, and connecting the bonding pads at the signal transmission ends of the ceramic substrates with the bonding pads at the corresponding positions of the hollow cavities through BGA (ball grid array) welding balls.
The preferred embodiment adopts a parallel sealing and welding process for sealing the cap, has air tightness, and the helium leakage rate is found through tests
≤5×10-3Pa·cm3/s(He)。
It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The meaning of "and/or" as used herein is intended to include both the individual components or both.
The term "connected" as used herein may mean either a direct connection between components or an indirect connection between components via other components.
In light of the foregoing description of the preferred embodiment of the present invention, many modifications and variations will be apparent to those skilled in the art without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.
Claims (9)
1. A multi-channel microsystem packaging assembly with a three-dimensional stacking form is in a ceramic packaging form and is characterized in that: comprises a shell and a ceramic substrate embedded in the shell;
the shell comprises a ceramic base, a plurality of hollow cavities arranged in parallel are arranged in the ceramic base, step-shaped structures are arranged at four side wall positions in each hollow cavity, and BGA bonding pads are arranged on the surfaces of the steps;
erecting a metal frame on the surface of the ceramic base, welding a metal heat sink at the bottom of the ceramic base, and covering the bottom surface of the whole ceramic base by the metal heat sink;
arranging a power chip on the surface of the metal heat sink in each hollow cavity;
a transmission line is arranged on the ceramic base and comprises a strip line, and two ends of the strip line are connected with the microstrip line;
a lead welding area is formed at the position, close to the outer side wall of the metal frame, of the transmission line and used for welding a metal lead, and bonding fingers are arranged at the position, close to the inner side wall of the metal frame, of the transmission line and used for bonding gold wires;
the ceramic substrate is embedded in the hollow cavity, the surface or the bottom surface of the ceramic substrate is provided with a plurality of cavities, the surface of the ceramic substrate is also provided with a BGA (ball grid array) pad, and the BGA pad on the ceramic substrate is matched with the BGA pad on the surface of the step.
2. The multi-channel microsystem package assembly of claim 1, wherein: the leading-out mode of the metal lead is a flat-out mode, and the width size proportion range of each part in the transmission line structure is a microstrip line: strip line: microstrip line is 0.25mm-0.35 mm: 0.10mm-0.25 mm: 0.25mm-0.35 mm.
3. The multi-channel microsystem package assembly of claim 1, wherein: the cross section of each hollow-out cavity is square, at least one layer of step is arranged in each hollow-out cavity, and the end face warping degree of each step is smaller than 1 mu m/mm;
BGA bonding pads are distributed on the step surface of the hollow cavity body, the diameter range of the bonding pads is 0.3mm-0.5mm, and the distance between every two adjacent bonding pads is smaller than 1.5 mm;
the bonding fingers of the bonding pad, the metal lead of the shell and the hollow cavity realize electrical connectivity through internal wiring of the ceramic base;
a plurality of bonding fingers which are arranged in parallel are respectively arranged in four directions of the surface of the step in the hollow cavity body to form row bonding fingers for bonding gold wires; the microstrip line close to the lead welding area in the transmission line is connected with the metal lead, and the microstrip line close to the bonding finger in the transmission line is communicated with the gold wire.
4. The multi-channel microsystem package assembly of claim 1, wherein: the ceramic base adopts alumina ceramics or aluminum nitride ceramics as a transmission medium;
the metal heat sink is made of high-thermal-conductivity materials, including tungsten copper or molybdenum copper or copper-molybdenum copper-copper or diamond copper;
the metal lead and the metal frame are made of iron-nickel alloy.
5. A method for fabricating the multi-channel microsystem package assembly with three-dimensional stacked form according to claim 1, characterized in that: the manufacturing method of the shell specifically comprises the following steps:
firstly, batching according to a ceramic formula, carrying out ball milling, and casting a raw ceramic band with the thickness range of 0.20mm-0.35mm for later use;
secondly, punching, filling holes, printing metallized patterns, punching cavities, laminating and cutting the stacked green ceramic tapes by adopting a high-temperature co-fired multilayer ceramic process, wherein the preparation method of the ceramic base is prepared by adopting an alumina or aluminum nitride ceramic HTCC process, and the specific forming method comprises the following steps:
step 21, preparing an aluminum plate, arranging a positioning pin on the aluminum plate, wherein the positioning pin is consistent with the positioning hole at the edge of the raw ceramic tape in position, preparing a hollow metal sheet, the hollow pattern on the hollow metal sheet is consistent with the cavity pattern of the raw ceramic tape at the uppermost layer, and arranging a positioning hole matched with the positioning pin at the edge of the hollow metal sheet;
step 22, opening cavities in a chip area and a lead welding area of a plurality of layers of green ceramic tapes, so that the chip area and the lead welding area have hollow cavity figures meeting design requirements;
laying a sheet of a Malan film on an aluminum plate, sequentially overlapping a plurality of layers of raw porcelain strips passing through the cavity on a positioning pin of the aluminum plate from bottom to top, laying a hollow metal sheet on the raw porcelain strip positioned on the topmost layer, and enabling the hollow metal sheet to coincide with the hollow cavity body pattern positioned on the topmost layer raw porcelain strip;
24, arranging a soft silica gel pad on the surface of the hollow metal sheet, wherein the thickness of the silica gel pad is greater than or equal to the total thickness of the multilayer green ceramic tape;
25, placing the whole body obtained in the 24 th step into a plastic packaging bag, performing vacuum packaging and laminating treatment, and performing hot pressing at the pressure of 100-300psi to obtain a whole stack of green porcelain with a hollow cavity structure, and performing green cutting on the whole stack of green porcelain to obtain an independent cavity-contained green porcelain base;
thirdly, sintering and leveling the green ceramic base with the cavity according to a ceramic sintering process;
fourthly, nickel plating is carried out on the metal area on the surface of the sintered and leveled ceramic base;
fifthly, annealing the metal frame at 800-1200 ℃ under the condition of hydrogen atmosphere, cooling along with the furnace, and plating nickel on the surface of the metal heat sink, wherein the thickness of the nickel layer is 1.5-4.0 mu m;
sixthly, brazing the metal frame, the ceramic base, the metal lead and the metal heat sink together through silver-copper solder under the atmosphere condition of 790 +/-10 ℃ to form a semi-finished product of the shell;
and seventhly, electroplating a nickel layer and a gold layer on the surface metal area of the semi-finished shell, wherein the thickness range of the nickel layer is 2.5-6.0 mu m, the thickness range of the gold layer on the surface of the BGA bonding pad is 0.1-0.3 mu m, and the thickness range of the gold layer on other metal areas on the surface of the shell is 1.3-5.7 mu m.
6. The method of claim 5, wherein the method comprises: the process for manufacturing the ceramic substrate specifically comprises the following steps:
step I, mixing materials according to a ceramic formula, carrying out ball milling, and casting a raw ceramic chip with the thickness of 0.10mm-0.35mm for later use;
step II, adopting a high-temperature co-fired multilayer ceramic process or a low-temperature co-fired multilayer ceramic process to punch, fill and print a metalized pattern on the standby green ceramic chip;
step III, processing the green ceramic chip obtained in the step II according to the method for processing the ceramic base in the step II, and enabling the surface or the bottom surface of the green ceramic chip to be provided with a plurality of cavities;
step IV, cutting and sintering the green ceramic chip subjected to cavity opening to obtain a ceramic substrate;
and V, performing nickel gold plating on the surface of the ceramic substrate by adopting a chemical method.
7. The method of claim 6, wherein the method comprises: welding a chip in the ceramic substrate cavity and sealing the chip, and specifically comprises the following steps:
welding a chip to the inner bottom of a cavity of a ceramic substrate in a reflow soldering manner;
and secondly, welding the metal cover plate to a sealing area at the edge of the opening of the cavity through low-temperature Korean materials.
8. The method of claim 7, wherein the method comprises: welding the power chip and the ceramic substrate into the shell, and specifically comprising the following steps:
welding a power chip to the surface of a metal heat sink positioned in the hollow cavity, and realizing the communication between the power chip and the shell through gold wire bonding;
and secondly, respectively welding a plurality of ceramic substrates to the surface matching positions of the hollow cavities in the shell, and connecting the bonding pads at the signal transmission ends of the ceramic substrates with the bonding pads at the corresponding positions of the hollow cavities through BGA (ball grid array) welding balls.
9. The method of claim 1, wherein the method comprises: and covering a metal cover plate on the top of the metal frame to seal the metal frame, wherein the sealing process comprises parallel sealing welding, solder welding and laser welding.
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| CN113571425A (en) * | 2021-07-09 | 2021-10-29 | 江苏富乐德半导体科技有限公司 | Preparation method of 3D structure ceramic substrate |
| CN114050129A (en) * | 2021-12-01 | 2022-02-15 | 尚爱英 | Air-tight packaged differential capacitance accelerometer signal detection circuit shell |
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