CN112635443B - Radio frequency micro-system three-dimensional packaging assembly with multi-stage substrate stacking and vertical heat dissipation channel and manufacturing method - Google Patents
Radio frequency micro-system three-dimensional packaging assembly with multi-stage substrate stacking and vertical heat dissipation channel and manufacturing method Download PDFInfo
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- CN112635443B CN112635443B CN202011524196.6A CN202011524196A CN112635443B CN 112635443 B CN112635443 B CN 112635443B CN 202011524196 A CN202011524196 A CN 202011524196A CN 112635443 B CN112635443 B CN 112635443B
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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Abstract
The invention relates to a radio frequency micro-system three-dimensional packaging assembly with multi-stage substrate stacking and vertical heat dissipation channels and a manufacturing method thereof, wherein the radio frequency micro-system three-dimensional packaging assembly comprises a shell, a plurality of heat dissipation channels and a plurality of heat dissipation channels, wherein the shell comprises a ceramic base, cavities are arranged on two sides of the ceramic base to form a double-sided cavity structure, a plurality of ceramic substrates are embedded in each cavity, and a horizontal heat dissipation channel is formed between the two cavities; a plurality of layers of steps are arranged in the cavity, the surface of each layer of step is distributed with a BGA bonding pad area array structure, metal leads are flattened at two sides of the end surface of the cavity facing the ground, and metal frames are respectively erected at the opening ends of the two cavities; the surface or the bottom surface of the ceramic substrate is respectively provided with at least one cavity, the surface of the ceramic substrate is also provided with a BGA (ball grid array) bonding pad area array structure, and the BGA bonding pad area array structure positioned on the surface of the ceramic substrate is matched with the BGA bonding pad area array structure positioned on the surface of the step; a vertical heat dissipation channel is arranged in the cavity of each ceramic base along the end surface of the step; the invention has the characteristics of high integration level, excellent microwave performance and better heat dissipation performance.
Description
Technical Field
The invention relates to a radio frequency micro-system three-dimensional packaging assembly with multi-stage substrate stacking and vertical heat dissipation channels and a manufacturing method thereof, and belongs to the field of radio frequency micro-system packaging.
Background
The radio frequency microsystem assembly generally has two typical packaging forms; firstly, PCB cooperation metal casing, this kind of form manufacturing difficulty is lower, is a more traditional encapsulation form. The packaging form is large in size generally, forms a bottleneck for the design and production of a complex structure, is limited in application, and is less in application at the present stage; the other type is the most common low temperature co-fired ceramic (LTCC) matched aluminum-based composite metal material shell at present, the LTCC substrate has low dielectric loss and high hardness, can meet the complex wiring requirement, has the condition of realizing multi-channel transmission, and is the most common radio frequency micro-system component packaging form at home and abroad at present. The aluminum-based composite metal material shell provides a signal input/output channel, a heat dissipation channel, mechanical support and a protected working environment for the LTCC substrate. Such packages are also typically relatively large in size. The radio frequency micro-system component is packaged in the form of an AlN substrate, a flip Monolithic Microwave Integrated Circuit (MMIC) and a hair button, but the hair button needs better accurate alignment and assembly, and the radio frequency micro-system component is not strong in practicability and lower in reliability.
In recent years, attention has been paid to a three-dimensional package assembly, and it has been reported that vertical stacking of multi-stage LTCC substrates is realized by a BGA structure of the LTCC substrates themselves inside a metal case. Although the packaging structure reduces the packaging volume to a certain extent, the microwave signals inside the metal shell need to be transmitted out by virtue of the SMT coaxial connector, so that the overall packaging volume of the micro-system is still large. While the problem of heat dissipation between vertically stacked LTCC substrates has been a problem in the field. The traditional method solves the problem of vertical heat dissipation by a method of encapsulating glue inside a metal shell, but is limited by low heat conductivity of the encapsulating glue and unsatisfactory vertical heat dissipation effect.
The development of rf microsystems components is moving towards higher integration and miniaturization. Compared with the LTCC technology, the high temperature co-fired ceramic (HTCC) technology has higher reliability and lower cost, and can realize higher integration level and miniaturization. The radio frequency micro-system three-dimensional packaging assembly with the multi-stage substrate stacking and the vertical heat dissipation channel based on the HTCC technology can realize richer packaging forms and has wider application scenes; by designing a multi-cavity multi-channel structure in the appearance, a metal shell structure can be omitted, and further miniaturization of the radio frequency micro-system component is realized. Therefore, a radio frequency micro-system three-dimensional package assembly developed based on the HTCC radio frequency micro-system three-dimensional package technology is needed to solve the problems of the radio frequency micro-system three-dimensional package assembly field in terms of integration level, microwave performance, heat dissipation, and the like.
Disclosure of Invention
The invention provides a radio frequency micro-system three-dimensional packaging assembly with multi-stage substrate stacking and vertical heat dissipation channels and a manufacturing method thereof.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a radio frequency micro-system three-dimensional packaging assembly with multi-stage substrate stacking and vertical heat dissipation channels adopts a ceramic packaging form and comprises a shell, wherein the shell is of a double-sided cavity structure;
the shell comprises a ceramic base, wherein two sides of the ceramic base are provided with cavities to form a double-sided cavity structure, a plurality of ceramic substrates are embedded in each cavity, and a horizontal heat dissipation channel is formed between the two cavities; arranging a plurality of layers of steps in each cavity, distributing a BGA (ball grid array) pad area array structure on the surface of each layer of step, leveling out metal leads on two sides of the end surface of each cavity facing the ground, and erecting metal frames at the open ends of the two cavities respectively;
the surface or the bottom surface of the ceramic substrate is respectively provided with at least one cavity, the surface of the ceramic substrate is also provided with a BGA (ball grid array) pad area array structure, and the BGA pad area array structure on the surface of the ceramic substrate is matched with the BGA pad area array structure on the surface of the step;
a heat dissipation metal material is embedded in a horizontal heat dissipation channel communicated with the two cavities, and chips are uniformly distributed on the surface and the bottom surface of the heat dissipation metal material;
in the cavity of each ceramic base, a vertical heat dissipation channel is arranged along the end surface of the step, and a heat dissipation metal material is also embedded in the vertical heat dissipation channel;
covering a metal cover plate on each metal frame to seal the two cavities;
as a further preferred aspect of the present invention,
the BGA pad area array structure is used as a microwave transmission structure and is in an imitated coaxial form, each pad comprises a central metal hole, a plurality of metal grounding holes are arranged around the central metal hole in a surrounding mode, and the metal grounding holes take the central metal hole as the center of a circle to form a circular ring;
the diameter range of the central metal hole is 0.05-0.10mm, the aperture range of the metal grounding hole is 0.10-0.20mm, and the radius range of the formed circular ring is 0.4-2.0 mm;
as a further optimization of the invention, the surface warpage of the steps in the cavity is less than 1 μm/mm, the upper surface of each layer of steps is horizontally distributed with a BGA bonding pad area array structure, the diameter range of the bonding pad is 0.3mm-0.5mm, the distance between adjacent bonding pads is less than 1.5mm, and the bonding pad and the metal lead realize electrical connectivity through the internal wiring of the ceramic base;
as a further preferred aspect of the present invention, the horizontal heat dissipation channel and the vertical heat dissipation channel are connected and thermally conducted by a welding thermal connector;
as a further preferred aspect of the present invention,
the heat dissipation metal material embedded in the horizontal heat dissipation channel is tungsten copper or molybdenum copper or diamond copper;
the heat dissipation metal material embedded in the vertical heat dissipation channel is tungsten copper or molybdenum copper or diamond copper;
based on the manufacturing method of the radio frequency micro-system three-dimensional packaging assembly with the multistage substrate stacking and the vertical heat dissipation channel, the manufacturing process of the shell specifically comprises the following steps:
firstly, mixing materials according to a low-loss ceramic formula, carrying out ball milling, and casting a raw ceramic band with the thickness of 0.20-0.35 mm for later use;
secondly, punching, filling holes, printing metallized patterns, punching cavities, laminating and cutting the standby green ceramic tape to form a ceramic base by adopting a high-temperature co-fired multilayer ceramic process; the ceramic base is formed by the following specific steps:
preparing a hollow aluminum plate, wherein the hollow aluminum plate only comprises a frame, positioning pins are inserted in the frame, the positioning pins on the hollow aluminum plate are consistent with the positions of the positioning holes at the edge of the standby raw porcelain band, and preparing two hollow metal sheets, wherein the hollow pattern on one hollow metal sheet is the same as the pattern of one cavity of the ceramic base, the hollow pattern on the other hollow metal sheet is the same as the pattern of the other cavity of the ceramic base, and the edge of each hollow metal sheet is provided with a positioning hole matched with the positioning pin;
step 22, carrying out chip area cavity opening on the multilayer standby green ceramic tape to enable the chip area to have a hollow cavity figure meeting the design requirement;
step 23, defining a cavity facing the ground as a lower cavity and a cavity facing the upper cavity, stacking a hollow metal sheet matched with the pattern of the lower cavity on a locating pin of a hollow aluminum plate, stacking the raw porcelain band passing through the cavity from the bottom layer to the top layer on the locating pin in sequence, stacking another hollow metal sheet on the surface of the stacked raw porcelain band, wherein the hollow metal sheet has the same pattern as the pattern of the upper cavity, and the hollow metal sheet is overlapped with the pattern of the hollow cavity on the raw porcelain band;
24, paving soft silica gel pads on the surfaces of the two hollow metal sheets, wherein the thickness of each soft silica gel pad is more than or equal to one half of the total thickness of the laminated green ceramic tape;
25, placing the integral structure obtained in the 24 th step in a plastic packaging bag, performing vacuum packaging and laminating treatment, wherein the hot pressing pressure range is 100 plus 300psi to obtain a whole stack of raw porcelain, performing raw cutting on the whole stack of raw porcelain to obtain a single raw porcelain base with a double-cavity structure, and manually coating metalized slurry on an area needing to be welded along the end face of the step in the raw porcelain base;
thirdly, pre-sintering the green ceramic base according to a low-loss ceramic sintering process, and performing secondary re-sintering after pre-sintering, wherein the temperature range of the pre-sintering is 1000-1600 ℃, and the temperature range of the secondary re-sintering is 1600-1700 ℃;
fourthly, nickel plating is carried out on the metal area on the surface of the sintered ceramic base;
fifthly, selecting two metal frames matched with the opening end of the cavity, and plating nickel on the metal frames and the surfaces of the heat dissipation metal materials embedded in the horizontal heat dissipation channel, wherein the thickness of the nickel layer is 1.5-4.0 mu m;
sixthly, embedding two metal frames, a ceramic base, a metal lead and a heat dissipation metal material into a die in sequence, and forming a prefabricated shell product through high-temperature brazing assembly, wherein the method comprises the following specific steps of:
step 61, firstly, placing the heat-dissipation metal material and the ceramic base into a graphite brazing mold, simultaneously placing silver-copper brazing sheets with the thickness of 0.05-0.10mm, and brazing the heat-dissipation metal material and the ceramic base together under the hydrogen condition of 790 +/-10 ℃ to form a semi-finished product A;
62, putting the semi-finished product A, a metal frame and a metal lead into a graphite brazing mold, simultaneously putting a silver-copper brazing sheet with the thickness of 0.05-0.10mm, and brazing together under the hydrogen condition of 790 +/-10 ℃ to form a semi-finished product B;
step 63, electroplating a nickel layer and a gold layer on the surface metal area of the semi-finished product B, wherein the thickness range of the nickel layer is 2.5-6.0 mu m, the thickness range of the gold layer on the surface of the BGA bonding pad is 0.1-0.3 mu m, and the thickness range of the gold layer on other metal areas on the surface of the shell is 1.3-5.7 mu m;
step 64, embedding the heat dissipation metal material embedded in the vertical heat dissipation channel and the gold-tin solder sheet with the thickness of 0.05mm into a die in sequence, and brazing the heat dissipation metal material and the gold-tin solder sheet together into a shell finished product under the nitrogen condition at 340 +/-10 ℃;
as a further preferred aspect of the present invention, the process for manufacturing the ceramic substrate specifically includes the steps of:
firstly, batching and ball milling are carried out according to a ceramic formula, and raw ceramic chips with the thickness ranging from 0.10mm to 0.35mm are cast for later use;
secondly, punching, filling and printing a metalized pattern by adopting a high-temperature co-fired multilayer ceramic process or a low-temperature co-fired multilayer ceramic process;
thirdly, performing cavity opening treatment on the whole stacked ceramic chips according to the method in the second step;
fourthly, cutting and sintering the whole stack of green ceramic tiles after cavity opening to obtain a ceramic substrate;
fifthly, carrying out nickel plating and gold plating on the surface of the ceramic substrate by adopting a chemical method;
as a further preferred aspect of the present invention, the chip is soldered in the ceramic substrate and sealed, and the specific process steps are as follows:
secondly, welding the chip to the bottom in the cavity of the ceramic substrate in a reflow soldering mode;
secondly, welding the cavity cover plate to the sealing area of the edge of each cavity opening through low-temperature solder;
as a further preferred aspect of the present invention, the welding of the ceramic substrate into the housing, and the first welding of the ceramic substrate into the upper chamber, specifically comprises the following steps:
step I, welding a chip to the surface of a heat dissipation metal material embedded in a horizontal heat dissipation channel, and realizing communication with a shell through bonding;
welding the back of the first layer of ceramic substrate to the corresponding position of the first layer of step of the upper cavity, connecting a signal transmission end bonding pad of the ceramic substrate with a bonding pad corresponding to the surface of the step in the upper cavity through a BGA (ball grid array) welding ball, and positioning a chip in the cavity of the ceramic substrate above the horizontal heat dissipation channel;
step III, welding the back of the second layer of ceramic substrate to the corresponding position of the second layer of step of the upper cavity, connecting a signal transmission terminal bonding pad of the ceramic substrate with a bonding pad corresponding to the surface of the step in the upper cavity through BGA (ball grid array) welding balls, and positioning a chip in the cavity of the second layer of ceramic substrate above the first layer of ceramic substrate;
IV, repeating the steps until all the ceramic substrates are welded;
step V, welding the ceramic substrate in the lower chamber according to the method from the step I to the step IV;
as a further preferred aspect of the present invention, the process of covering each metal frame with a metal cover plate and sealing the chamber is a gold-tin solder bonding process, and the heating is performed by locally heating the solder region of the cap seal.
Through the technical scheme, compared with the prior art, the invention has the following beneficial effects:
1. the internal BGA transmission structure provided by the invention replaces an SMT coaxial transmission structure which is stretched outwards in the traditional radio frequency module, so that the packaging size of a radio frequency micro system can be greatly reduced, and the transmission effect of microwave signals is ensured;
2. according to the invention, a transmission structure in the vertical direction is established in the shell, and the multi-stage ceramic substrates are vertically stacked in the shell, so that the requirements of microwave signal transmission and isolation of the substrates are met, and the purpose of reducing the total volume of a plane mounting space and a package can be achieved by increasing the stacking mounting space in the vertical direction, so that the integration level of a radio frequency micro-system is updated to a new step;
3. the composite metal material radiating fins are pasted in the vertical direction and the horizontal direction, heat is transferred out through the metal frame and the metal cover plate, and a good radiating channel can be provided for the stacked substrates;
4. compared with the heat conductivity of the traditional three-dimensional stacked internal potting adhesive, the heat conductivity of the surface-mounted composite metal material radiating fin is greatly improved, and the radiating requirement of dozens of watts and even hundreds of watts of chips can be met.
Drawings
The invention is further illustrated with reference to the following figures and examples.
FIG. 1 is a schematic overall structure of a preferred embodiment provided by the present invention;
fig. 2 is a schematic structural diagram of a horizontal heat dissipation channel and a vertical heat dissipation channel in a preferred embodiment of the present invention.
In the figure: the heat dissipation structure comprises a metal cover plate 1, a metal frame 2, a ceramic base 3, a metal lead 4, a ceramic substrate 5, BGA solder balls 6, a chip 7, a horizontal heat dissipation channel 8, a cavity cover plate 9 and a vertical heat dissipation channel 10.
Detailed Description
The present invention will now be described in further detail with reference to the accompanying drawings. These drawings are simplified schematic views illustrating only the basic structure of the present invention in a schematic manner, and thus show only the constitution related to the present invention.
The radio frequency microsystem three-dimensional packaging technology based on HTCC will become an important direction for future development in the field of microsystem packaging, and the radio frequency microsystem three-dimensional packaging component with the multistage substrate stacking and vertical heat dissipation channel 10, which is developed based on the HTCC technology, adopts a ceramic packaging form and comprises a shell, wherein the shell is a double-sided cavity structure; the shell comprises a ceramic base 3, wherein two sides of the ceramic base are provided with cavities to form a double-sided cavity structure, a plurality of ceramic substrates 5 are embedded in each cavity, and a horizontal heat dissipation channel 8 is formed between the two cavities; arranging a plurality of layers of steps in each chamber, distributing a BGA (ball grid array) pad area array structure on the surface of each layer of step, leveling out metal leads 4 on two sides of the end surface of each chamber facing the ground, and erecting metal frames 2 at the open ends of the two chambers respectively;
the surface or the bottom surface of the ceramic substrate is respectively provided with at least one cavity, the surface of the ceramic substrate is also provided with a BGA (ball grid array) bonding pad area array structure, and the BGA bonding pad area array structure positioned on the surface of the ceramic substrate is matched with the BGA bonding pad area array structure positioned on the surface of the step; a heat dissipation metal material is embedded in a horizontal heat dissipation channel communicated with the two cavities, and chips 7 are distributed on the surface and the bottom surface of the heat dissipation metal material; in the cavity of each ceramic base, a vertical heat dissipation channel is arranged along the end surface of the step, and a heat dissipation metal material is also embedded in the vertical heat dissipation channel; and a metal cover plate 1 is covered on each metal frame to seal the two chambers.
In order to reduce the packaging size of a radio frequency micro system and ensure the transmission effect of microwave signals, the BGA pad area array structure is used as a microwave transmission structure which is in an imitated coaxial form, each pad comprises a central metal hole, a plurality of metal grounding holes are arranged around the central metal hole in a surrounding mode, and the metal grounding holes form a circular ring by taking the central metal hole as the center of a circle; the diameter range of the central metal hole is 0.05-0.10mm, the aperture range of the metal grounding hole is 0.10-0.20mm, and the radius range of the formed circular ring is 0.4-2.0 mm; during manufacturing, the key dimensions of the transmission structure and the transmission structure of the microwave signal in the coaxial type simulation mode in the required frequency band (40-60GHz) are calculated through simulation software according to the dielectric performance of the low-loss ceramic, so that the structure of the component shell is obtained, and the key dimensions of the substrate transmission line are designed, so that the structure of the ceramic substrate is obtained.
In the application, the warpage of the surface of the step positioned in the cavity is less than 1 mu m/mm, the upper surface of each layer of step is horizontally distributed with a BGA bonding pad area array structure, the diameter range of the bonding pad is 0.3mm-0.5mm, the distance between adjacent bonding pads is less than 1.5mm, and the bonding pad and the metal lead realize electrical connectivity through the internal wiring of the ceramic base; the horizontal heat dissipation channel and the vertical heat dissipation channel are communicated and conduct heat through a welding heat conduction connector.
In order to enable the whole structure to have a better heat dissipation effect, the heat dissipation metal material embedded in the horizontal heat dissipation channel is tungsten copper or molybdenum copper or diamond copper; the heat dissipation metal material embedded in the vertical heat dissipation channel is tungsten copper or molybdenum copper or diamond copper.
Aiming at the radio frequency micro-system three-dimensional packaging assembly with the multistage substrate stacking and the vertical heat dissipation channel, the application also provides a manufacturing method of the assembly, the manufacturing method is analyzed layer by layer, and the manufacturing process of the shell specifically comprises the following steps:
firstly, mixing materials according to a low-loss ceramic formula, carrying out ball milling, and casting a raw ceramic band with the thickness of 0.20-0.35 mm for later use; a preferred low loss ceramic formulation is given herein, the proportions being in parts, alumina: magnesium oxide: calcium oxide: clay 92-97: 2-5: 0.1-3: 0.1-3;
secondly, punching, filling holes, printing metallized patterns, punching cavities, laminating and cutting the standby green ceramic tape to form a ceramic base by adopting a high-temperature co-fired multilayer ceramic process; the ceramic base is formed by the following specific steps:
preparing a hollow aluminum plate, wherein the hollow aluminum plate only comprises a frame, positioning pins are inserted in the frame, the positioning pins on the hollow aluminum plate are consistent with the positions of the positioning holes at the edge of the standby raw porcelain band, and preparing two hollow metal sheets, wherein the hollow pattern on one hollow metal sheet is the same as the pattern of one cavity of the ceramic base, the hollow pattern on the other hollow metal sheet is the same as the pattern of the other cavity of the ceramic base, and the edge of each hollow metal sheet is provided with a positioning hole matched with the positioning pin;
step 22, carrying out chip area cavity opening on the multilayer standby green ceramic tape to enable the chip area to have a hollow cavity figure meeting the design requirement;
step 23, defining a cavity facing the ground as a lower cavity and a cavity facing the upper cavity, stacking a hollow metal sheet matched with the pattern of the lower cavity on a locating pin of a hollow aluminum plate, stacking the raw porcelain band passing through the cavity from the bottom layer to the top layer on the locating pin in sequence, stacking another hollow metal sheet on the surface of the stacked raw porcelain band, wherein the hollow metal sheet has the same pattern as the pattern of the upper cavity, and the hollow metal sheet is overlapped with the pattern of the hollow cavity on the raw porcelain band;
24, paving soft silica gel pads on the surfaces of the two hollow metal sheets, wherein the thickness of each soft silica gel pad is more than or equal to one half of the total thickness of the laminated green ceramic tape;
25, placing the integral structure obtained in the 24 th step in a plastic packaging bag, performing vacuum packaging and laminating treatment, wherein the hot pressing pressure range is 100 plus 300psi to obtain a whole stack of raw porcelain, performing raw cutting on the whole stack of raw porcelain to obtain a single raw porcelain base with a double-cavity structure, and manually coating metalized slurry on an area needing to be welded along the end face of the step in the raw porcelain base;
thirdly, pre-sintering the green ceramic base according to a low-loss ceramic sintering process, and performing secondary re-sintering after pre-sintering, wherein the temperature range of the pre-sintering is 1000-1600 ℃, and the temperature range of the secondary re-sintering is 1600-1700 ℃;
fourthly, nickel plating is carried out on the metal area on the surface of the sintered ceramic base;
fifthly, selecting two metal frames matched with the opening end of the cavity, and plating nickel on the metal frames and the surfaces of the heat dissipation metal materials embedded in the horizontal heat dissipation channel, wherein the thickness of the nickel layer is 1.5-4.0 mu m;
sixthly, embedding two metal frames, a ceramic base, a metal lead and a heat dissipation metal material into a die in sequence, and forming a prefabricated shell product through high-temperature brazing assembly, wherein the method comprises the following specific steps of:
step 61, firstly, placing the heat-dissipation metal material and the ceramic base into a graphite brazing mold, simultaneously placing silver-copper brazing sheets with the thickness of 0.05-0.10mm, and brazing the heat-dissipation metal material and the ceramic base together under the hydrogen condition of 790 +/-10 ℃ to form a semi-finished product A;
62, putting the semi-finished product A, a metal frame and a metal lead into a graphite brazing mold, simultaneously putting a silver-copper brazing sheet with the thickness of 0.05-0.10mm, and brazing together under the hydrogen condition of 790 +/-10 ℃ to form a semi-finished product B;
step 63, electroplating a nickel layer and a gold layer on the surface metal area of the semi-finished product B, wherein the thickness range of the nickel layer is 2.5-6.0 mu m, the thickness range of the gold layer on the surface of the BGA bonding pad is 0.1-0.3 mu m, and the thickness range of the gold layer on other metal areas on the surface of the shell is 1.3-5.7 mu m;
and step 64, sequentially embedding the heat dissipation metal material embedded in the vertical heat dissipation channel and the gold-tin solder sheet with the thickness of 0.05mm into a die, and brazing the heat dissipation metal material and the gold-tin solder sheet together under the nitrogen condition at 340 +/-10 ℃ to obtain a shell finished product.
The manufacturing process of the ceramic substrate specifically comprises the following steps:
firstly, batching and ball milling are carried out according to a ceramic formula, and raw ceramic chips with the thickness ranging from 0.10mm to 0.35mm are cast for later use;
secondly, punching, filling and printing a metalized pattern by adopting a high-temperature co-fired multilayer ceramic process or a low-temperature co-fired multilayer ceramic process;
thirdly, performing cavity opening treatment on the whole stacked ceramic chips according to the method in the second step;
fourthly, cutting and sintering the whole stack of green ceramic tiles after cavity opening to obtain a ceramic substrate;
fifthly, carrying out nickel plating and gold plating on the surface of the ceramic substrate by adopting a chemical method.
And then welding a chip in the ceramic substrate and sealing the chip, wherein the specific process steps are as follows:
welding a chip to the bottom in a cavity of the ceramic substrate in a reflow soldering mode;
secondly, the cavity cover plate 9 is welded to the sealing area of the edge of each cavity opening through low-temperature welding materials.
And finally, welding the ceramic substrate into the shell, and firstly welding the ceramic substrate into the upper cavity, wherein the method specifically comprises the following steps:
step I, welding a chip to the surface of a heat dissipation metal material embedded in a horizontal heat dissipation channel, and realizing communication with a shell through bonding;
step II, welding the back of the first layer of ceramic substrate to the corresponding position of the first layer of step of the upper cavity, connecting a signal transmission terminal bonding pad of the ceramic substrate with a bonding pad corresponding to the surface of the step in the upper cavity through a BGA (ball grid array) welding ball 6, and positioning a chip in the cavity of the ceramic substrate above the horizontal heat dissipation channel;
step III, welding the back of the second layer of ceramic substrate to the corresponding position of the second layer of step of the upper cavity, connecting a signal transmission terminal bonding pad of the ceramic substrate with a bonding pad corresponding to the surface of the step in the upper cavity through BGA (ball grid array) welding balls, and positioning a chip in the cavity of the second layer of ceramic substrate above the first layer of ceramic substrate;
IV, repeating the steps until all the ceramic substrates are welded;
and step V, finishing welding the ceramic substrate in the lower chamber according to the method from the step I to the step IV.
It should be noted that, the process of covering a metal cover plate on each metal frame and sealing the cavity is a gold-tin solder soldering process, and the heating method is to locally heat the solder area of the sealing cap.
Finally, a preferred embodiment is provided, as shown in fig. 1, a cavity is formed in each of the upper surface and the lower surface of the ceramic base, two layers of steps are arranged in each cavity, a ceramic substrate is erected on each layer of step, as can be clearly seen from the figure, two cavities are formed in the surface of the first-stage ceramic substrate closest to the horizontal heat dissipation channel, only one cavity is formed in the bottom surface of the first-stage ceramic substrate, three cavities are formed in the surface of the second-stage ceramic substrate, and two cavities are formed in the bottom surface of the second-stage ceramic substrate; FIG. 2 shows the layout of the vertical heat dissipation channels;
the manufacturing method comprises the following steps:
the manufacturing process of the shell specifically comprises the following steps:
firstly, batching according to a low-loss ceramic formula, carrying out ball milling, and casting a raw ceramic band with the thickness of 0.20mm for later use; a preferred low loss ceramic formulation is given herein, the proportions being in parts, alumina: magnesium oxide: calcium oxide: clay 95: 2.5: 0.5: 1.5;
secondly, punching, filling holes, printing metallized patterns, punching cavities, laminating and cutting the standby green ceramic tape to form a ceramic base by adopting a high-temperature co-fired multilayer ceramic process; the ceramic base is formed by the following specific steps:
preparing a hollow aluminum plate, wherein the hollow aluminum plate only comprises a frame, positioning pins are inserted in the frame, the positioning pins on the hollow aluminum plate are consistent with the positions of the positioning holes at the edge of the standby raw porcelain band, and preparing two hollow metal sheets, wherein the hollow pattern on one hollow metal sheet is the same as the pattern of one cavity of the ceramic base, the hollow pattern on the other hollow metal sheet is the same as the pattern of the other cavity of the ceramic base, and the edge of each hollow metal sheet is provided with a positioning hole matched with the positioning pin;
step 22, carrying out chip area cavity opening on the multilayer standby green ceramic tape to enable the chip area to have a hollow cavity figure meeting the design requirement;
step 23, defining a cavity facing the ground as a lower cavity and a cavity facing the upper cavity, stacking a hollow metal sheet matched with the pattern of the lower cavity on a locating pin of a hollow aluminum plate, stacking the raw porcelain band passing through the cavity from the bottom layer to the top layer on the locating pin in sequence, stacking another hollow metal sheet on the surface of the stacked raw porcelain band, wherein the hollow metal sheet has the same pattern as the pattern of the upper cavity, and the hollow metal sheet is overlapped with the pattern of the hollow cavity on the raw porcelain band;
24, paving soft silica gel pads on the surfaces of the two hollow metal sheets, wherein the thickness of each soft silica gel pad is more than or equal to one half of the total thickness of the laminated green ceramic tape;
25, placing the integral structure obtained in the 24 th step in a plastic packaging bag, performing vacuum packaging and laminating treatment, wherein the hot pressing pressure range is 100 plus 300psi to obtain a whole stack of raw porcelain, performing raw cutting on the whole stack of raw porcelain to obtain a single raw porcelain base with a double-cavity structure, and manually coating metalized slurry on an area needing to be welded along the end face of the step in the raw porcelain base;
thirdly, pre-sintering the green ceramic base according to a low-loss ceramic sintering process, and performing secondary re-sintering after pre-sintering, wherein the temperature range of the pre-sintering is 1600 ℃, and the temperature range of the secondary re-sintering is 1670 ℃;
fourthly, nickel plating is carried out on the metal area on the surface of the sintered ceramic base;
fifthly, selecting two metal frames matched with the opening end of the cavity, and plating nickel on the metal frames and the surfaces of the heat dissipation metal materials embedded in the horizontal heat dissipation channel, wherein the thickness of the nickel layer is 1.5-4.0 mu m;
sixthly, embedding two metal frames, a ceramic base, a metal lead and a heat dissipation metal material into a die in sequence, and forming a prefabricated shell product through high-temperature brazing assembly, wherein the method comprises the following specific steps of:
step 61, firstly, placing a heat dissipation metal material and a ceramic base into a graphite brazing mold, simultaneously placing a silver-copper brazing sheet with the thickness of 0.05mm, and brazing together under the hydrogen condition of 790 +/-10 ℃ to form a semi-finished product A;
62, putting the semi-finished product A, a metal frame and a metal lead into a graphite brazing mold, simultaneously putting a silver-copper brazing sheet with the thickness of 0.10mm, and brazing together under the hydrogen condition of 790 +/-10 ℃ to form a semi-finished product B;
step 63, electroplating a nickel layer and a gold layer on the surface metal area of the semi-finished product B, wherein the thickness range of the nickel layer is 2.5-6.0 mu m, the thickness range of the gold layer on the surface of the BGA bonding pad is 0.1-0.3 mu m, and the thickness range of the gold layer on other metal areas on the surface of the shell is 1.3-5.7 mu m;
and step 64, sequentially embedding the heat dissipation metal material embedded in the vertical heat dissipation channel and the gold-tin solder sheet with the thickness of 0.05mm into a die, and brazing the heat dissipation metal material and the gold-tin solder sheet together under the nitrogen condition at 340 +/-10 ℃ to obtain a shell finished product.
The manufacturing process of the ceramic substrate specifically comprises the following steps:
firstly, batching and ball milling are carried out according to a ceramic formula, and raw ceramic chips with the thickness range of 0.10mm are cast for later use;
secondly, punching, filling and printing a metalized pattern by adopting a high-temperature co-fired multilayer ceramic process or a low-temperature co-fired multilayer ceramic process;
thirdly, performing cavity opening treatment on the whole stacked ceramic chips according to the method in the second step;
fourthly, cutting and sintering the whole stack of green ceramic tiles after cavity opening to obtain a ceramic substrate;
fifthly, carrying out nickel plating and gold plating on the surface of the ceramic substrate by adopting a chemical method.
And then welding a chip in the ceramic substrate and sealing the chip, wherein the specific process steps are as follows:
welding a chip to the bottom in a cavity of the ceramic substrate in a reflow soldering mode;
and secondly, welding the cavity cover plate to the sealing area at the edge of each cavity opening through low-temperature solder.
And finally, welding the ceramic substrate into the shell, and firstly welding the ceramic substrate into the upper cavity, wherein the method specifically comprises the following steps:
step I, welding a chip to the surface of a heat dissipation metal material embedded in a horizontal heat dissipation channel, and realizing communication with a shell through bonding;
welding the back of the first layer of ceramic substrate to the corresponding position of the first layer of step of the upper cavity, connecting a signal transmission end bonding pad of the ceramic substrate with a bonding pad corresponding to the surface of the step in the upper cavity through a BGA (ball grid array) welding ball, and positioning a chip in the cavity of the ceramic substrate above the horizontal heat dissipation channel;
step III, welding the back of the second layer of ceramic substrate to the corresponding position of the second layer of step of the upper cavity, connecting a signal transmission terminal bonding pad of the ceramic substrate with a bonding pad corresponding to the surface of the step in the upper cavity through BGA (ball grid array) welding balls, and positioning a chip in the cavity of the second layer of ceramic substrate above the first layer of ceramic substrate;
IV, repeating the steps until all the ceramic substrates are welded;
and step V, finishing welding the ceramic substrate in the lower chamber according to the method from the step I to the step IV.
Finally, the applicant verifies the preferable embodiment, and finds that the heat dissipation channels at the four corners of the cavity of the ceramic base and the heat dissipation fins in the middle of the cavity can conduct heat away through the metal frame and the metal cover plate, so as to realize effective heat dissipation of the stacked circuit substrate, and meanwhile, the shell can be locally heated and capped by adopting gold-tin solder, and has airtightness, and helium leakage rate is less than or equal to 5 × 10-3Pa·cm3/s(He)。
It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The meaning of "and/or" as used herein is intended to include both the individual components or both.
The term "connected" as used herein may mean either a direct connection between components or an indirect connection between components via other components.
In light of the foregoing description of the preferred embodiment of the present invention, many modifications and variations will be apparent to those skilled in the art without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.
Claims (10)
1. A radio frequency micro-system three-dimensional packaging assembly with multi-stage substrate stacking and vertical heat dissipation channels is in a ceramic packaging form and is characterized in that: comprises a shell, wherein the shell is of a double-sided cavity structure;
the shell comprises a ceramic base, wherein two sides of the ceramic base are provided with cavities to form a double-sided cavity structure, a plurality of ceramic substrates are embedded in each cavity, and a horizontal heat dissipation channel is formed between the two cavities; arranging a plurality of layers of steps in each cavity, distributing a BGA (ball grid array) pad area array structure on the surface of each layer of step, leveling out metal leads on two sides of the end surface of each cavity facing the ground, and erecting metal frames at the open ends of the two cavities respectively;
the surface or the bottom surface of the ceramic substrate is respectively provided with at least one cavity, the surface of the ceramic substrate is also provided with a BGA (ball grid array) pad area array structure, and the BGA pad area array structure on the surface of the ceramic substrate is matched with the BGA pad area array structure on the surface of the step;
a heat dissipation metal material is embedded in a horizontal heat dissipation channel communicated with the two cavities, and chips are uniformly distributed on the surface and the bottom surface of the heat dissipation metal material;
in the cavity of each ceramic base, a vertical heat dissipation channel is arranged along the end surface of the step, and a heat dissipation metal material is also embedded in the vertical heat dissipation channel;
and covering a metal cover plate on each metal frame to seal the two chambers.
2. The rf microsystem three-dimensional package assembly of claim 1, wherein the package assembly comprises a multi-level substrate stack and vertical heat dissipation channels, wherein:
the BGA pad area array structure is used as a microwave transmission structure and is in an imitated coaxial form, each pad comprises a central metal hole, a plurality of metal grounding holes are arranged around the central metal hole in a surrounding mode, and the metal grounding holes take the central metal hole as the center of a circle to form a circular ring;
the diameter range of the central metal hole is 0.05-0.10mm, the aperture range of the metal grounding hole is 0.10-0.20mm, and the radius range of the formed circular ring is 0.4-2.0 mm.
3. The rf microsystem three-dimensional package assembly of claim 1, wherein the package assembly comprises a multi-level substrate stack and vertical heat dissipation channels, wherein: the warpage of the surface of the step in the cavity is less than 1 μm/mm, the upper surface of each layer of step is horizontally distributed with a BGA bonding pad area array structure, the diameter range of the bonding pad is 0.3mm-0.5mm, the distance between adjacent bonding pads is less than 1.5mm, and the bonding pad and the metal lead realize electrical connectivity through the internal wiring of the ceramic base.
4. The rf microsystem three-dimensional package assembly of claim 1, wherein the package assembly comprises a multi-level substrate stack and vertical heat dissipation channels, wherein: and the horizontal heat dissipation channel and the vertical heat dissipation channel are communicated and conduct heat through a welding heat conduction connector.
5. The rf microsystem three-dimensional package assembly of claim 1, wherein the package assembly comprises a multi-level substrate stack and vertical heat dissipation channels, wherein:
the heat dissipation metal material embedded in the horizontal heat dissipation channel is tungsten copper or molybdenum copper or diamond copper;
the heat dissipation metal material embedded in the vertical heat dissipation channel is tungsten copper or molybdenum copper or diamond copper.
6. The method of claim 1, wherein the method comprises the steps of: the manufacturing process of the shell specifically comprises the following steps:
firstly, mixing materials according to a low-loss ceramic formula, carrying out ball milling, and casting a raw ceramic band with the thickness of 0.20-0.35 mm for later use;
secondly, punching, filling holes, printing metallized patterns, punching cavities, laminating and cutting the standby green ceramic tape to form a ceramic base by adopting a high-temperature co-fired multilayer ceramic process; the ceramic base is formed by the following specific steps:
preparing a hollow aluminum plate, wherein the hollow aluminum plate only comprises a frame, positioning pins are inserted in the frame, the positioning pins on the hollow aluminum plate are consistent with the positions of the positioning holes at the edge of the standby raw porcelain band, and preparing two hollow metal sheets, wherein the hollow pattern on one hollow metal sheet is the same as the pattern of one cavity of the ceramic base, the hollow pattern on the other hollow metal sheet is the same as the pattern of the other cavity of the ceramic base, and the edge of each hollow metal sheet is provided with a positioning hole matched with the positioning pin;
step 22, carrying out chip area cavity opening on the multilayer standby green ceramic tape to enable the chip area to have a hollow cavity figure meeting the design requirement;
step 23, defining a cavity facing the ground as a lower cavity and a cavity facing the upper cavity, stacking a hollow metal sheet matched with the pattern of the lower cavity on a locating pin of a hollow aluminum plate, stacking the raw porcelain band passing through the cavity from the bottom layer to the top layer on the locating pin in sequence, stacking another hollow metal sheet on the surface of the stacked raw porcelain band, wherein the hollow metal sheet has the same pattern as the pattern of the upper cavity, and the hollow metal sheet is overlapped with the pattern of the hollow cavity on the raw porcelain band;
24, paving soft silica gel pads on the surfaces of the two hollow metal sheets, wherein the thickness of each soft silica gel pad is more than or equal to one half of the total thickness of the laminated green ceramic tape;
25, placing the integral structure obtained in the 24 th step in a plastic packaging bag, performing vacuum packaging and laminating treatment, wherein the hot pressing pressure range is 100 plus 300psi to obtain a whole stack of raw porcelain, performing raw cutting on the whole stack of raw porcelain to obtain a single raw porcelain base with a double-cavity structure, and manually coating metalized slurry on an area needing to be welded along the end face of the step in the raw porcelain base;
thirdly, pre-sintering the green ceramic base according to a low-loss ceramic sintering process, and performing secondary re-sintering after pre-sintering, wherein the temperature range of the pre-sintering is 1000-1600 ℃, and the temperature range of the secondary re-sintering is 1600-1700 ℃;
fourthly, nickel plating is carried out on the metal area on the surface of the sintered ceramic base;
fifthly, selecting two metal frames matched with the opening end of the cavity, and plating nickel on the metal frames and the surfaces of the heat dissipation metal materials embedded in the horizontal heat dissipation channel, wherein the thickness of the nickel layer is 1.5-4.0 mu m;
sixthly, embedding two metal frames, a ceramic base, a metal lead and a heat dissipation metal material into a die in sequence, and forming a prefabricated shell product through high-temperature brazing assembly, wherein the method comprises the following specific steps of:
step 61, firstly, placing the heat-dissipation metal material and the ceramic base into a graphite brazing mold, simultaneously placing silver-copper brazing sheets with the thickness of 0.05-0.10mm, and brazing the heat-dissipation metal material and the ceramic base together under the hydrogen condition of 790 +/-10 ℃ to form a semi-finished product A;
62, putting the semi-finished product A, a metal frame and a metal lead into a graphite brazing mold, simultaneously putting a silver-copper brazing sheet with the thickness of 0.05-0.10mm, and brazing together under the hydrogen condition of 790 +/-10 ℃ to form a semi-finished product B;
step 63, electroplating a nickel layer and a gold layer on the surface metal area of the semi-finished product B, wherein the thickness range of the nickel layer is 2.5-6.0 mu m, the thickness range of the gold layer on the surface of the BGA bonding pad is 0.1-0.3 mu m, and the thickness range of the gold layer on other metal areas on the surface of the shell is 1.3-5.7 mu m;
and step 64, sequentially embedding the heat dissipation metal material embedded in the vertical heat dissipation channel and the gold-tin solder sheet with the thickness of 0.05mm into a die, and brazing the heat dissipation metal material and the gold-tin solder sheet together under the nitrogen condition at 340 +/-10 ℃ to obtain a shell finished product.
7. The method of claim 1, wherein the method comprises the steps of: the manufacturing process of the ceramic substrate specifically comprises the following steps:
firstly, batching and ball milling are carried out according to a ceramic formula, and raw ceramic chips with the thickness ranging from 0.10mm to 0.35mm are cast for later use;
secondly, punching, filling and printing a metalized pattern by adopting a high-temperature co-fired multilayer ceramic process or a low-temperature co-fired multilayer ceramic process;
thirdly, performing cavity opening treatment on the whole stacked ceramic chips according to the method in the second step;
fourthly, cutting and sintering the whole stack of green ceramic tiles after cavity opening to obtain a ceramic substrate;
fifthly, carrying out nickel plating and gold plating on the surface of the ceramic substrate by adopting a chemical method.
8. The method of claim 7, wherein the step of fabricating the RF microsystem three-dimensional package assembly with the multi-level substrate stack and the vertical heat dissipation channel comprises: welding a chip in the ceramic substrate and sealing the chip, wherein the specific process steps are as follows:
welding a chip to the bottom in a cavity of the ceramic substrate in a reflow soldering mode;
and secondly, welding the cavity cover plate to the sealing area at the edge of each cavity opening through low-temperature solder.
9. The method of claim 8, wherein the step of fabricating the rf microsystem three-dimensional package assembly with the multi-level substrate stack and the vertical heat dissipation channel comprises: welding the ceramic substrate into the shell, firstly welding the ceramic substrate into the upper cavity, and concretely comprising the following steps:
step I, welding a chip to the surface of a heat dissipation metal material embedded in a horizontal heat dissipation channel, and realizing communication with a shell through bonding;
welding the back of the first layer of ceramic substrate to the corresponding position of the first layer of step of the upper cavity, connecting a signal transmission end bonding pad of the ceramic substrate with a bonding pad corresponding to the surface of the step in the upper cavity through a BGA (ball grid array) welding ball, and positioning a chip in the cavity of the ceramic substrate above the horizontal heat dissipation channel;
step III, welding the back of the second layer of ceramic substrate to the corresponding position of the second layer of step of the upper cavity, connecting a signal transmission terminal bonding pad of the ceramic substrate with a bonding pad corresponding to the surface of the step in the upper cavity through BGA (ball grid array) welding balls, and positioning a chip in the cavity of the second layer of ceramic substrate above the first layer of ceramic substrate;
IV, repeating the steps until all the ceramic substrates are welded;
and step V, finishing welding the ceramic substrate in the lower chamber according to the method from the step I to the step IV.
10. The method of claim 1, wherein the method comprises the steps of: and covering a metal cover plate on each metal frame, wherein the process of sealing the cavity is a gold-tin solder welding process, and the heating mode is to locally heat the solder area of the sealing cap.
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