CN112652520A - 一种改善lcos工艺缺陷的方法 - Google Patents
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Abstract
本发明提供一种改善LCOS工艺缺陷的方法,提供用于LCOS工艺的像素区和逻辑区,像素区设有上表面暴露的顶层铜;在顶层铜上表面沉积一层保护层,使顶层铜上表面产生丘状凸起以释放顶层铜表面的应力;刻蚀去除保护层;平坦化顶层铜的上表面以去除丘状凸起;在平坦化的顶层铜的上表面再次沉积保护层。本发明在不增加光罩的情况下,通过先释放铜表面应力后,再次沉积保护层以防止铜离子扩散,工艺制程优化后,铜表面的缺陷数量显著减少。
Description
技术领域
本发明涉及半导体技术领域,特别是涉及一种改善LCOS工艺缺陷的方法。
背景技术
新型的反射式MICRO LCD投影技术,其结构在硅片上,利用半导体制程制作驱动面板,然后在电晶体上透过研磨技术磨平,并镀上铝作为反射镜,形成CMOS基板,然后将CMOS基板与含有透明电极之上玻璃基板贴合,再注入液晶,进行封装测试。
目前市场上硅基微显示(LCOS)芯片主要采用90nm~0.13um Al互连工艺,对于55nm Cu互连工艺的应用处于待开发状态。
LCOS应用于55nm Cu互连工艺,需开发“像素(pixel)”区域钝化刻蚀(passivationetch)工艺,以便顶层铜板(TM Cu pad)作为反射式液晶控制单元。顶层铜板无法与铝板(Alpad)一样直接外漏使用,需沉积一层薄膜保护层,会导致铜板(Cu pad)表面产生丘状缺陷(hillock defect),影响反射效果。
因此,需要提出一种新的方法来解决上述问题。
发明内容
鉴于以上所述现有技术的缺点,本发明的目的在于提供一种改善LCOS工艺缺陷的方法,用于解决现有技术中的LCOS的铜互连工艺中,由于铜板表面产生丘状缺陷,从而影响反射效果的问题。
为实现上述目的及其他相关目的,本发明提供一种改善LCOS工艺缺陷的方法,至少包括以下步骤:
步骤一、提供用于LCOS工艺的像素区和逻辑区,所述像素区和逻辑区彼此相邻;并且所述像素区设有上表面暴露的顶层铜;
步骤二、在所述顶层铜上表面沉积一层保护层,使所述顶层铜上表面产生丘状凸起以释放所述顶层铜表面的应力;
步骤三、刻蚀去除所述保护层;
步骤四、平坦化所述顶层铜的上表面以去除所述丘状凸起;
步骤五、在平坦化的所述顶层铜的上表面再次沉积所述保护层。
优选地,步骤一中的所述像素区的所述上表面暴露的顶层铜是由刻蚀所述像素区中位于所述顶层铜上的叠层,将所述顶层铜暴露而形成。
优选地,步骤一的所述像素区的所述叠层自下而上由第一氮化硅层、第一氧化硅层、第二氧化硅层、第二氮化硅层叠加构成。
优选地,步骤二中的所述保护层为氮化硅层。
优选地,步骤二中的所述保护层为NDC层。
优选地,步骤二中的所述保护层为氮化硅层或NDC层。
优选地,步骤四中平坦化所述顶层铜的上表面的方法为化学机械研磨法。
优选地,该方法用于LCOS中55nm铜互连工艺。
优选地,步骤一中的所述逻辑区自下而上设有所述叠层以及位于所述叠层中的接触孔。
如上所述,本发明的改善LCOS工艺缺陷的方法,具有以下有益效果:本发明在不增加光罩的情况下,通过先释放铜表面应力后,再次沉积保护层以防止铜离子扩散,工艺制程优化后,铜表面的缺陷数量显著减少。
附图说明
图1显示为本发明中像素区的顶层铜未被刻蚀暴露的结构示意图;
图2显示为本发明中像素区和逻辑区的结构示意图;
图3显示为本发明的改善LCOS工艺缺陷的方法;
图4显示为本发明中在顶层铜上沉积保护层后的结构示意图;
图5显示为本发明中刻蚀去除保护层后的结构示意图;
图6显示为本发明中平坦化顶层铜去除丘状凸起后的结构示意图;
图7显示为本发明中在平坦化的顶层铜上沉积保护层的结构示意图。
具体实施方式
以下通过特定的具体实例说明本发明的实施方式,本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用,本说明书中的各项细节也可以基于不同观点与应用,在没有背离本发明的精神下进行各种修饰或改变。
请参阅图1至图7。需要说明的是,本实施例中所提供的图示仅以示意方式说明本发明的基本构想,遂图式中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制,其实际实施时各组件的型态、数量及比例可为一种随意的改变,且其组件布局型态也可能更为复杂。
实施例一
本发明提供一种改善LCOS工艺缺陷的方法,如图3所示,图3显示为本发明的改善LCOS工艺缺陷的方法,该方法至少包括以下步骤:
步骤一、提供用于LCOS工艺的像素区和逻辑区,所述像素区和逻辑区彼此相邻;并且所述像素区设有上表面暴露的顶层铜;如图2所示,图2显示为本发明中像素区和逻辑区的结构示意图;图2中用于LCOS(硅基微显示)工艺的像素区和逻辑区由一条竖的虚线相互隔开,所述像素区(pixel)和逻辑区(logic)彼此相邻;并且所述像素区(pixel)设有上表面暴露的顶层铜00;
本发明进一步地,本实施例的步骤一中的所述像素区的所述上表面暴露的顶层铜是由刻蚀所述像素区中位于所述顶层铜上的叠层,将所述顶层铜暴露而形成。如图1所示,图1显示为本发明中像素区的顶层铜未被刻蚀暴露的结构示意图。步骤一中的顶层铜被刻蚀暴露之前的结构如图1所示,所述顶层铜00上被所述叠层覆盖。
本发明再进一步地,本实施例的步骤一的所述像素区的所述叠层自下而上由第一氮化硅层、第一氧化硅层、第二氧化硅层、第二氮化硅层叠加构成。也就是说,覆盖在所述顶层铜上的所述叠层包括:第一氮化硅层01、第一氧化硅层02、第二氧化硅层03、第二氮化硅层04。刻蚀所述叠层至暴露出所述顶层铜00的上表面为止,形成如图2所示的结构。
本发明进一步地,本实施例的步骤一中的所述逻辑区自下而上设有所述叠层以及位于所述叠层中的接触孔。也就是说,如图1和图2所示,所述逻辑区与所述像素区的所述叠层由同一工序形成,因此,所述逻辑区也包含有自下而上的所述第一氮化硅层01、第一氧化硅层02、第二氧化硅层03、第二氮化硅层04,如图2所示,所述逻辑区还包括位于所述叠层中的接触孔05。所述接触孔05中填充有金属,所述接触孔的上表面位于所述第二氧化硅层03,所述接触孔的下表面位于所述第一氮化硅层01上;所述逻辑区在所述接触孔05下设有与所述像素区同一工序形成的顶层铜,所述顶层铜位于氧化物中,亦即在所述顶层铜的周围填充有所述氧化物,所述氧化物为氧化硅。
同样在所述像素区的所述顶层铜的周围填充有氧化物,本实施例中该氧化物为氧化硅。
步骤二、在所述顶层铜上表面沉积一层保护层,使所述顶层铜上表面产生丘状凸起以释放所述顶层铜表面的应力;如图4所示,图4显示为本发明中在顶层铜上沉积保护层后的结构示意图,该步骤二在所述顶层铜00上表面沉积一层保护层06,使所述顶层铜00上表面产生丘状凸起A以释放所述顶层铜00表面的应力;图2中也示出在顶层铜00上沉积所述保护层06,但未示出所述丘状凸起。
本发明进一步地,本实施例的步骤二中的所述保护层为氮化硅层。
步骤三、刻蚀去除所述保护层;如图5所示,图5显示为本发明中刻蚀去除保护层后的结构示意图。该步骤三将所述顶层铜00上表面的所述保护层06刻蚀去除后,得到如图5所示的结构,所述顶层铜00上表面产生了所述丘状凸起A。因此,所述顶层铜00上表面的应力得以释放。
步骤四、平坦化所述顶层铜的上表面以去除所述丘状凸起;本发明进一步地,本实施例的步骤四中平坦化所述顶层铜的上表面的方法为化学机械研磨法。如图6所示,图6显示为本发明中平坦化顶层铜去除丘状凸起后的结构示意图。本实施例的该步骤四采用化学机械研磨法(CMP)研磨所述顶层铜00的上表面,将所述丘状凸起A去除,所述顶层铜00的上表面得以平坦化。
步骤五、在所述顶层铜的上表面再次沉积所述保护层。如图7所示,图7显示为本发明中在平坦化的顶层铜上沉积保护层的结构示意图。该步骤五中在平坦化的所述顶层铜00上再次沉积所述保护层,本发明该步骤中所沉积的保护层与步骤二中所述保护层的成分相同,为氮化硅层。
本发明进一步地,本实施例的该方法用于LCOS中55nm铜互连工艺。
实施例二
本发明提供一种改善LCOS工艺缺陷的方法,本实施例与实施例一的不同之处在于,本实施例的步骤二中的所述保护层为NDC(氮掺杂碳化硅薄膜)层,同时本实施例的步骤五中的所述保护层为NDC(氮掺杂碳化硅薄膜)层。
实施例三
本发明提供一种改善LCOS工艺缺陷的方法,本实施例的步骤二中的所述保护层为氮化硅层或NDC(氮掺杂碳化硅薄膜)层。同时本实施例的步骤五中的所述保护层为氮化硅层或NDC(氮掺杂碳化硅薄膜)层。
综上所述,本发明在不增加光罩的情况下,通过先释放铜表面应力后,再次沉积保护层以防止铜离子扩散,工艺制程优化后,铜表面的缺陷数量显著减少。所以,本发明有效克服了现有技术中的种种缺点而具高度产业利用价值。
上述实施例仅例示性说明本发明的原理及其功效,而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下,对上述实施例进行修饰或改变。因此,举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变,仍应由本发明的权利要求所涵盖。
Claims (10)
1.一种改善LCOS工艺缺陷的方法,其特征在于,至少包括以下步骤:
步骤一、提供用于LCOS工艺的像素区和逻辑区,所述像素区和逻辑区彼此相邻;并且所述像素区设有上表面暴露的顶层铜;
步骤二、在所述顶层铜上表面沉积一层保护层,使所述顶层铜上表面产生丘状凸起以释放所述顶层铜表面的应力;
步骤三、刻蚀去除所述保护层;
步骤四、平坦化所述顶层铜的上表面以去除所述丘状凸起;
步骤五、在平坦化的所述顶层铜的上表面再次沉积所述保护层。
3.根据权利要求1所述的改善LCOS工艺缺陷的方法,其特征在于:步骤一中的所述像素区的所述上表面暴露的顶层铜是由刻蚀所述像素区中位于所述顶层铜上的叠层,将所述顶层铜暴露而形成。
4.根据权利要求3所述的改善LCOS工艺缺陷的方法,其特征在于:步骤一的所述像素区的所述叠层自下而上由第一氮化硅层、第一氧化硅层、第二氧化硅层、第二氮化硅层叠加构成。
5.根据权利要求1所述的改善LCOS工艺缺陷的方法,其特征在于:步骤二中的所述保护层为氮化硅层。
6.根据权利要求1所述的改善LCOS工艺缺陷的方法,其特征在于:步骤二中的所述保护层为NDC层。
7.根据权利要求1所述的改善LCOS工艺缺陷的方法,其特征在于:步骤二中的所述保护层为氮化硅层或NDC层。
8.根据权利要求1所述的改善LCOS工艺缺陷的方法,其特征在于:步骤四中平坦化所述顶层铜的上表面的方法为化学机械研磨法。
9.根据权利要求1所述的改善LCOS工艺缺陷的方法,其特征在于:该方法用于LCOS中55nm铜互连工艺。
10.根据权利要求3所述的改善LCOS工艺缺陷的方法,其特征在于:步骤一中的所述逻辑区自下而上设有所述叠层以及位于所述叠层中的接触孔。
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