CN112640077A - 用于提供站对站的均匀性的方法和设备 - Google Patents

用于提供站对站的均匀性的方法和设备 Download PDF

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CN112640077A
CN112640077A CN201980057079.2A CN201980057079A CN112640077A CN 112640077 A CN112640077 A CN 112640077A CN 201980057079 A CN201980057079 A CN 201980057079A CN 112640077 A CN112640077 A CN 112640077A
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gas
manifold
variable conductance
source
gas outlet
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阿德里安·拉沃伊
普尔凯特·阿加瓦尔
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Lam Research Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
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    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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Abstract

提供了一种用于处理衬底的设备。提供第一气体源。第一气体歧管连接至所述第一气体源。第二气体歧管连接至所述第一气体源。第一处理站具有第一气体出口，其中所述第一气体出口连接至所述第一气体歧管。第二处理站具有第二气体出口，其中所述第二气体出口连接至所述第二气体歧管。第一可变传导阀沿着所述第一气体歧管而介于所述第一气体源和所述第一气体出口之间。第二可变传导阀沿着所述第二气体歧管而介于所述第一气体源和所述第二气体出口之间。

Description

用于提供站对站的均匀性的方法和设备
相关申请的交叉引用
本申请要求2018年8月29日提交的美国申请No.16/115,970的优先权利益，其全部内容通过引用并入本发明。
技术领域
本公开内容涉及半导体装置的形成。更具体而言，本公开内容涉及半导体装置在系统内的形成，其中多个站共享气体源。
发明内容
为了实现前述目的，并且根据本公开内容的目的，提供了一种用于处理衬底的设备。提供第一气体源。第一气体歧管连接至所述第一气体源。第二气体歧管连接至所述第一气体源。第一处理站具有第一气体出口，其中所述第一气体出口连接至所述第一气体歧管。第二处理站具有第二气体出口，其中所述第二气体出口连接至所述第二气体歧管。第一可变传导阀沿着所述第一气体歧管而介于所述第一气体源和所述第一气体出口之间。第二可变传导阀沿着所述第二气体歧管而介于所述第一气体源和所述第二气体出口之间。
在另一实现方式中，提供了一种用于处理堆叠件的设备。提供第一气体源。第一气体歧管连接至所述第一气体源。第一处理站具有第一气体出口，其中所述第一气体出口连接至所述第一气体歧管。第一可变传导阀沿着所述第一气体歧管而介于所述第一气体源及所述第一气体出口之间。
在另一实现方式中，一种在处理系统中处理多个堆叠件的方法，所述处理系统包含：第一气体源；第一气体歧管，其连接至所述第一气体源；第二气体歧管，其连接至所述第一气体源；具有第一气体出口的第一处理站，其中所述第一气体出口连接至所述第一气体歧管；具有第二气体出口的第二处理站，其中所述第二气体出口连接至所述第二气体歧管；第一可变传导阀，其沿着所述第一气体歧管而介于所述第一气体源和所述第一气体出口之间；第二可变传导阀，其沿着所述第二气体歧管而介于所述第一气体源和所述第二气体出口之间；第一混合歧管，其介于所述第一可变传导阀和所述第一气体出口之间，其中所述第一可变传导阀介于所述第一气体源和第一混合歧管之间；第二混合歧管，其介于所述第二气体歧管和所述第二气体出口之间，其中所述第二可变传导阀介于所述第一气体源和所述第二混合歧管之间；第二气体源；第三气体歧管，其连接在所述第二气体源和所述第一混合歧管之间；第四气体歧管，其连接在所述第二气体源和所述第二混合歧管之间；第三可变传导阀，其沿着所述第三气体歧管而连接在所述第二气体源和所述第一混合歧管之间；第四可变传导阀，其沿着所述第四气体歧管而连接在所述第二气体源和所述第二混合歧管之间；第五可变传导阀，其介于所述第一混合歧管和所述第一气体出口之间；以及第六可变传导阀，其介于所述第二混合歧管和所述第二气体出口之间，所述方法包含：调整所述第一可变传导阀、所述第二可变传导阀、所述第三可变传导阀、所述第四可变传导阀、所述第五可变传导阀、所述第六可变传导阀，以提供所述第一处理站与所述第二处理站之间的改善的均匀性。
本公开的这些和其他特征将下文在本公开内容的详细描述中并结合下面的附图更详细地描述。。
附图说明
本公开在附图中的图形是通过举例的方式而不是通过限制的方式示出，其中相同的附图标记表示类似的元件，并且其中：
图1是实施方案的示意性说明。
图2是可以在一实施方案中使用的处理室的示意图。
图3是可用于实践一实施方案的计算机系统的示意图。
图4是一实施方案的流程图。
图5A是另一实施方案的剖视示意图。
图5B为图5A所示的实施方案的剖视侧视图。
图6为用于图5A所示的实施方案中的气体系统的示意说明图。
具体实施方式
所提供的公开内容现在将参照如附图中所示的其几个优选的实施方式详细描述。在下面的描述中，阐述了许多具体细节以便彻底理解本公开。然而，对本领域的技术人员将显而易见的是，在没有这些具体细节中的部分或所有的情况下可以实现本公开。在其他情况下，没有详细描述众所周知的处理步骤和/或结构，以免不必要地使本公开难以理解。
图1为一实施方案的示意说明图。在本示例中，提供具有第一气体源104和第二气体源108的系统。第一气体源104连接到第一可变传导阀112和第二可变传导阀116。可变传导阀是一种提供可调节流量阻力的阀。第二气体源108连接到第三可变传导阀120和第四可变传导阀124。该系统还包含第一处理站128和第二处理站132。第一处理站128具有第一气体出口136。第二处理站132具有第二气体出口140。第五可变传导阀144连接到第一气体出口136。第六可变传导阀148连接到第二气体出口140。第一混合歧管152连接到第五可变传导阀144。第二混合歧管156连接到第六可变传导阀148。第一歧管160连接在第一可变传导阀112和第一混合歧管152之间。第二歧管164连接至第二可变传导阀116和第二混合歧管156之间。第三歧管168连接在第三可变传导阀120和第一混合歧管152之间。第四歧管172连接在第四可变传导阀124和第二混合歧管156之间。在该段落中，所述连接是流体连接，其使得流体能从第一物件(item)流到第二物件。例如，由于第一混合歧管152连接至第五可变传导阀144，因此例如气体之类的流体能够从第一混合歧管152传递至第五可变传导阀144。此外，由于流体可以通过第一歧管160、第一混合歧管152和第五可变传导阀144而从第一可变传导阀112流到第一气体出口136，因此第一可变传导阀112便连接到第一气体出口136。
图2是可用于实施方案中的第一处理站128的处理室的示意图。在一或多个实施方案中，第一处理站128包含在室249内被室壁252包围的呈配送板形式的第一气体出口136以及晶片支撑件208。在室249内，衬底203位于晶片支撑件208上方。边缘环209围绕晶片支撑件208。支撑件温度控制器250连接至晶片支撑件208。射频(RF)源230提供RF功率至上电极，该上电极在本实施方案中为第一气体出口136。在示例性的实施方案中，400kHz、13.56MHz以及任选地2MHz、27MHz的电源构成RF源230。在该实施方案中，晶片支撑件208接地。在该实施方案中，为每个频率提供一个产生器。在其他实施方案中，产生器可以是分开的RF源，或者分开的RF产生器可以连接到不同的电极。例如，上电极可以具有连接到不同RF源的内电极和外电极。在其他实施方案中可以使用RF源和电极的其他布置。控制器235可控制地连接到RF源230、排放泵220和气体源210。这种室的一个示例是由Lam Research Corporation(Fremont,CA)所制造的StrikerTMOxide系统。
图3是示出适用于实现在实施方案中使用的控制器235的计算机系统300的高级框图。计算机系统可以具有从集成电路、印刷电路板和小型手持装置到超大型计算机的许多物理形式。计算机系统300包括一个或多个处理器302，并且还可以包括电子显示装置304(用于显示图形、文本和其他数据)、主存储器306(例如随机存取存储器(RAM))，存储装置308(例如，硬盘驱动器)、可移动存储装置310(例如，光盘驱动器)、用户界面装置312(例如，键盘、触摸屏、小键盘、鼠标或其他指点装置等)和通信接口314(例如，无线网络接口)。通信接口314允许经由链路在计算机系统300和外部装置之间传送软件和数据。系统还可以包括与上述装置/模块连接的通信基础设施316(例如，通信总线、交叉连接杆或网络)。
经由通信接口314传送的信息可以是诸如电子、电磁、光学之类的信号形式或能够经由通信链路由通信接口314接收的其它信号，通信链路携带信号并可以使用导线或电缆、光纤、电话线、蜂窝电话链路、射频链路和/或其他通信信道实现。利用这样的通信接口，可以预期一个或多个处理器302可以在执行上述方法步骤的过程中从网络接收信息，或者可以向网络输出信息。此外，本发明的方法实施方案可以仅在处理器上执行，或者可以通过诸如因特网之类的网络与共享处理的一部分的远程处理器一起执行。
术语“非瞬态计算机可读介质”通常用于指代介质，例如主存储器、辅助存储器、可移动存储装置，以及存储装置，例如硬盘、闪存存储器、磁盘驱动存储器、CD-ROM以及其他形式的持久性存储器，并且不应当被解释为涵盖瞬态标的物，如载波或信号。计算机代码的示例包括机器代码(例如由编译器产生的机器代码)和含有由计算机使用解释器执行的较高级代码的文档。计算机可读介质也可以是由包含在载波中的计算机数据信号发送的并且代表能由处理器执行的指令序列的计算机代码。
图4是在实施方案中使用的方法的高阶流程图。在第一处理站128和第二处理站132中处理多个衬底203(步骤404)。衬底203可以是测试晶片，例如空白晶片或用于测试的上面具有堆叠件和/或装置的晶片。测量已处理的衬底203，以测量和确定站对站的均匀性(步骤408)。调节第一、第二、第三、第四、第五和第六可变传导阀112、116、120、124、144和148以改变流量阻力而调节流率以改善站对站的均匀性(步骤412)。如果需要更多的测试来检查改变的结果(步骤416)，则返回步骤404。否则，第一处理站128和第二处理站132就用于处理生产中的衬底203(步骤420)。衬底203可以是用于生产装置而不是用来测试站的生产晶片。
在上面的示例性处理室中，第一处理站128和第二处理站132用于硅氧化物(SiO2)的原子层沉积。在上述示例中，第一处理站128与第二处理站132处于不同的处理室。在上述示例以及其他类型的衬底处理中，当不同的站共享共同的气体源时，并非总能实现站对站的均匀性。不受理论的束缚，相信站与站之间的差异(例如气流系统中的不同阻力、不同体积、不同功率或不同温度)会导致在不同站中晶片处理上的差异。出乎意料的是，发现通过使用不同的可变传导阀来改变气流的阻力，可以改善站对站的均匀性，即使不均匀性系因处理室中的不同而非因气流系统中的阻力的不同而引起的也如此。
在其他实施方案中，不同数量的站可以分享共同的气体源。在一些实施方案中，一个室中可以有一个以上的处理站。其他实施方案可以具有不同数量的气体源。例如，一个实施方案可以具有用于两个或更多个处理站的单个气体源。另一示例可以具有用于两个或更多个处理站的三个或更多个气体源。
在一些实施方案中，可变传导阀可以是被设计成调节可变传导阀中的阻力的蝶形阀。在其他实施方案中，可以使用一系列不同尺寸的孔来调节阻力以提供可变传导阀。在一些实施方案中，可变传导阀可以通过机械方式调节。在其他实施方案中，可变传导阀可以通过电子方式调节。可以通过控制器235来调节通过电子方式调节的可变传导阀。对衬底进行处理、测量经处理的衬底、通过控制器235来调节可变传导阀以及然后处理额外衬底，提供了反馈回路。第一气体源104可以具有质量流量控制器。第二气体源108可具有质量流量控制器。由于质量流量控制器被设定为提供流率，而可调节的可变传导阀提供可调节的流量阻力，因此可变传导阀与质量流量控制器是分离的且不同的。
在另一示例中，单一处理站可以连接到一或多个气体源，并且在单一处理站和一或多个气体源之间具有可变传导阀。在该示例中，即使该单一处理站不与其他单个处理站共享气体源，可变传导阀的存在也可用于改善站对站的均匀性。对于处理可以提供配方。该配方可用于多个站。如果上述站的容积不同或未正确校准加热器，所提供的配方将与另一站的结果不同。相信，调节可变传导阀可用于补偿例如容积或温度的差异。这样的补偿会让该处理站针对给定的配方提供与其他处理站更均匀的结果。
在另一实施方案中，四个处理站可以在单一处理室中共享气体源。图5A是具有四个处理站的处理室500的俯视剖视图。处理室500具有室壁504。图5B为该室的剖视侧视图。室壁504内有四个衬底508位于处理室500内的四个处理站。每一处理站包含用于支撑衬底508的基座512、用于提供气体至衬底508的气体出口516以及将气体出口516连接到可变传导阀和混合歧管(未示出)的歧管520。
图6是可用于图5的处理室500的气体输送系统600的示意图。在该示例中，气体输送系统600具有第一气体源604和第二气体源608。第一气体源604与四个可变传导阀612流体连接，因为在该示例中，第一气体源604是在四个处理站(未示出)的四个气体出口516之间共享。第二气体源608与四个可变传导阀616流体连通。如图所示，四个气体出口516中的每一个通过歧管520而连接至可变传导阀620以及混合歧管624。每个混合歧管624通过歧管628而连接到与第一气体源604流体连通的可变传导阀612，并且通过歧管632而连接到与第二气体源608流体连通的可变传导阀616。
该实施方案可让连接到相同气体源的四个处理站改善站对站的均匀性。已经发现在这种系统中，站对站的不均匀性是不均匀性最显著的来源。
虽然已经根据几个优选实施方案描述了本公开，但是存在落在本公开的范围内的改变、修改、置换和各种替代等同方案。还应当注意，存在实现本公开的方法和装置的许多替代方式。因此，以下所附权利要求旨在被解释为包括落在本公开的真实精神和范围内的所有这样的改变、修改、置换和各种替代等同方案。

Claims (15)

1.一种用于处理衬底的设备，其包含：
第一气体源；
第一气体歧管，其连接至所述第一气体源；
第二气体歧管，其连接至所述第一气体源；
具有第一气体出口的第一处理站，其中所述第一气体出口连接至所述第一气体歧管；
具有第二气体出口的第二处理站，其中所述第二气体出口连接至所述第二气体歧管；
第一可变传导阀，其沿着所述第一气体歧管而介于所述第一气体源和所述第一气体出口之间；以及
第二可变传导阀，其沿着所述第二气体歧管而介于所述第一气体源和所述第二气体出口之间。
2.根据权利要求1所述的设备，其还包含：
第一混合歧管，其沿着所述第一气体歧管而介于所述第一可变传导阀和所述第一气体出口之间；
第二混合歧管，其沿着所述第二气体歧管而介于所述第二可变传导阀和所述第二气体出口之间；
第二气体源；
第三气体歧管，其连接在所述第二气体源和所述第一混合歧管之间；
第四气体歧管，其连接在所述第二气体源和所述第二混合歧管之间；
第三可变传导阀，其沿着所述第三气体歧管而连接在所述第二气体源和所述第一混合歧管之间；
第四可变传导阀，其沿着所述第四气体歧管而连接在所述第二气体源和所述第二混合歧管之间；
第五可变传导阀，其介于所述第一混合歧管和所述第一气体出口之间；以及
第六可变传导阀，其介于所述第二混合歧管和所述第二气体出口之间。
3.根据权利要求2所述的设备，其还包含：
第五气体歧管，其连接至所述第一气体源；
第六气体歧管，其连接至所述第一气体源；
第七气体歧管，其连接至所述第二气体源；
第八气体歧管，其连接至所述第二气体源；
具有第三气体出口的第三处理站；
具有第四气体出口的第四处理站；
第三混合歧管，其连接在所述第五气体歧管和第七气体歧管与所述第三气体出口之间；
第七可变传导阀，其介于所述第一气体源和所述第三混合歧管之间；
第八可变传导阀，其介于所述第二气体源和所述第三混合歧管之间；
第四混合歧管，其连接在所述第六气体歧管和第八气体歧管与所述第四气体出口之间；
第九可变传导阀，其连接在所述第一气体源和所述第四混合歧管之间；
第十可变传导阀，其介于所述第二气体源和所述第四混合歧管；
第十一可变传导阀，其介于所述第三混合歧管和所述第三气体出口之间；以及
第十二可变传导阀，其介于所述第四混合歧管和所述第四气体出口之间。
4.根据权利要求3所述的设备，其还包含处理室，其中所述第一处理站、所述第二处理站、所述第三处理站、以及所述第四处理站均位于所述处理室中。
5.根据权利要求4所述的设备，其还包含RF源，以提供RF功率至所述处理室。
6.根据权利要求1所述的设备，其还包含处理室，其中所述第一处理站和所述第二处理站均位于所述处理室中。
7.根据权利要求6所述的设备，其还包含RF源，以提供RF功率至所述处理室。
8.根据权利要求1所述的设备，其中所述第一和所述第二可变传导阀提供可调整的流量阻力。
9.根据权利要求8所述的设备，其还包含可控地连接至所述第一和所述第二可变传导阀的控制器，其中所述控制器适于调整所述第一和所述第二可变传导阀的流量阻力。
10.根据权利要求1所述的设备，其中所述第一和所述第二可变传导阀为蝶形阀。
11.一种用于处理堆叠件的设备，其包含：
第一气体源；
第一气体歧管，其连接至所述第一气体源；
具有第一气体出口的第一处理站，其中所述第一气体出口连接至所述第一气体歧管；以及
第一可变传导阀，其沿着所述第一气体歧管而介于所述第一气体源及所述第一气体出口之间。
12.根据权利要求11所述的设备，其还包含：
处理室，其中所述第一处理站位于所述处理室中；以及
RF源，其用于提供RF功率至所述处理室。
13.一种在处理系统中处理多个堆叠件的方法，所述处理系统包含：第一气体源；第一气体歧管，其连接至所述第一气体源；第二气体歧管，其连接至所述第一气体源；具有第一气体出口的第一处理站，其中所述第一气体出口连接至所述第一气体歧管；具有第二气体出口的第二处理站，其中所述第二气体出口连接至所述第二气体歧管；第一可变传导阀，其沿着所述第一气体歧管而介于所述第一气体源和所述第一气体出口之间；第二可变传导阀，其沿着所述第二气体歧管而介于所述第一气体源和所述第二气体出口之间；第一混合歧管，其沿着所述第一气体歧管而介于所述第一可变传导阀和所述第一气体出口之间；第二混合歧管，其沿着所述第二气体歧管而介于所述第二可变传导阀和所述第二气体出口之间；第二气体源；第三气体歧管，其连接在所述第二气体源和所述第一混合歧管之间；第四气体歧管，其连接在所述第二气体源和所述第二混合歧管之间；第三可变传导阀，其沿着所述第三气体歧管而连接在所述第二气体源和所述第一混合歧管之间；第四可变传导阀，其沿着所述第四气体歧管而连接在所述第二气体源和所述第二混合歧管之间；第五可变传导阀，其介于所述第一混合歧管和所述第一气体出口之间；以及第六可变传导阀，其介于所述第二混合歧管和所述第二气体出口之间，所述方法包含：调整所述第一可变传导阀、所述第二可变传导阀、所述第三可变传导阀、所述第四可变传导阀、所述第五可变传导阀、所述第六可变传导阀，以提供所述第一处理站与所述第二处理站之间的改善的均匀性。
14.根据权利要求13所述的方法，其还包含：
在所述第一处理站与所述第二处理站中处理测试晶片的衬底；
测量所述衬底；以及
确定所述第一处理站与所述第二处理站之间的站对站的均匀性。
15.根据权利要求14所述的方法，其还包含在所述第一处理站与所述第二处理站中处理生产晶片的衬底。
CN201980057079.2A 2018-08-29 2019-08-12 用于提供站对站的均匀性的方法和设备 Pending CN112640077A (zh)

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