CN112638142A - Cover film with electromagnetic wave shield and method for manufacturing the same, and flexible printed wiring board with electromagnetic wave shield and method for manufacturing the same - Google Patents

Cover film with electromagnetic wave shield and method for manufacturing the same, and flexible printed wiring board with electromagnetic wave shield and method for manufacturing the same Download PDF

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Publication number
CN112638142A
CN112638142A CN202010986819.5A CN202010986819A CN112638142A CN 112638142 A CN112638142 A CN 112638142A CN 202010986819 A CN202010986819 A CN 202010986819A CN 112638142 A CN112638142 A CN 112638142A
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Prior art keywords
electromagnetic wave
cover film
layer
film
cover
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Inventor
吉田一义
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Shin Etsu Polymer Co Ltd
Shin Etsu Chemical Co Ltd
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Shin Etsu Polymer Co Ltd
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
    • H05K9/0073Shielding materials
    • H05K9/0081Electromagnetic shielding materials, e.g. EMI, RFI shielding
    • H05K9/0084Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a single continuous metallic layer on an electrically insulating supporting structure, e.g. metal foil, film, plating coating, electro-deposition, vapour-deposition
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0216Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/0218Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
    • H05K1/0224Patterned shielding planes, ground planes or power planes
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits

Abstract

The invention provides a cover film with electromagnetic wave shield, a manufacturing method thereof and a flexible printed circuit board, wherein the cover film with electromagnetic wave shield can further improve the production efficiency of the printed circuit board with electromagnetic wave shield. A cover film (1) with electromagnetic wave shielding and a method for manufacturing the same, and a flexible printed wiring board with electromagnetic wave shielding and a method for manufacturing the same, wherein the cover film (1) with electromagnetic wave shielding comprises: the shield layer comprises an insulating resin layer (10), a shield layer (20) comprising a conductive layer, and a cover film (40) provided on the side of the shield layer (20) opposite to the insulating resin layer (10), wherein the cover film (40) comprises a cover film body (41) and a cover adhesive layer (42) provided on the surface of the cover film body (41) opposite to the shield layer (20).

Description

Cover film with electromagnetic wave shield and method for manufacturing the same, and flexible printed wiring board with electromagnetic wave shield and method for manufacturing the same
Technical Field
The present invention relates to a cover film with an electromagnetic wave shield and a method for manufacturing the same, and a flexible printed wiring board with an electromagnetic wave shield and a method for manufacturing the same.
Background
Flexible Printed Circuit boards (FPCs) are often used in electronic devices such as mobile devices, network devices, servers, and testers. Further, the FPC has been used as a composite member for providing electronic devices with functions of circuits, cables, connectors, and the like. The FPC is used for wiring of a movable portion of consumer/industrial equipment such as OA equipment, various computers, and automobiles, or as a substitute for transmission wiring such as a coaxial cable and a wire harness (wire harness), for example, by utilizing its flexibility.
However, electronic devices equipped with electronic components such as semiconductor devices for speeding up data processing are being downsized and operating frequencies thereof are being increased. Therefore, the FPC requires stable impedance in high-frequency signals and excellent transmission characteristics of electric signals due to low transmission loss. For example, in the use of high-speed digital signals having frequencies of several GHz to several tens of GHz, high-speed transmission without impairing the frequency characteristics is required. Therefore, for example, in the case of an FPC used for an electronic device for transmitting an image with high definition, the stabilization of the specific impedance or the differential impedance is strongly required.
In response to such a demand, there has been proposed a cover film with an electromagnetic wave shield, in which a film-shaped substrate including an insulating resin, a conductive layer, and an insulating adhesive layer including an oligophenylene ether and a styrene butadiene elastomer are laminated in this order (for example, patent document 1).
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2013-193253
Disclosure of Invention
Problems to be solved by the invention
In recent years, communication devices such as smartphones and electronic devices such as next-generation TVs are required to transmit and receive data of a larger capacity at a higher speed, and the increase in frequency of electric signals has been studied. For example, in the field of wireless communication, 5G (fifth generation mobile communication system) is estimated to be introduced in 2020 or so. In 5G, the communication speed is tens of times or more of the previous generation, and in order to realize this speed, a high frequency region in which the electric signal is 10GHz or more is studied. In the automotive field, it is also considered to use, as an on-vehicle radar system, an electric signal in a high frequency range of 60GHz or more, which is called millimeter wave. As described above, in future information communication, it is essential to process an electric signal in a high frequency band, and there is a drawback that a transmission loss increases due to an increase in frequency. In order to suppress an increase in transmission loss, the dielectric constant of the insulator needs to be lowered. Therefore, it is necessary to suppress an increase in transmission loss by lowering the dielectric constant of the insulator.
However, the cover film with electromagnetic wave shielding described in patent document 1 is a film to be stuck on a cover lay (cover lay) of a flexible printed wiring board, and the number of steps is large, and the production efficiency of the printed wiring board with electromagnetic wave shielding cannot be further improved.
Accordingly, an object of the present invention is to provide a cover film with an electromagnetic wave shield and a method for manufacturing the same, and a flexible printed wiring board with an electromagnetic wave shield and a method for manufacturing the same, which can further improve the production efficiency of the printed wiring board with an electromagnetic wave shield.
Means for solving the problems
[1] An electromagnetic wave shielding cover film comprising an insulating resin layer, a shielding layer comprising a conductive layer, and a cover film provided on the side of the shielding layer opposite to the insulating resin layer,
the cover film includes a cover film main body and a cover adhesive layer provided on a surface of the cover film main body opposite to the shield layer.
[2] The cover film with an electromagnetic wave shield according to [1], wherein,
the cover film contains aromatic polyether ketone.
[3] The cover film with an electromagnetic wave shield according to [2], wherein,
the aromatic polyether ketone is polyether ether ketone or polyether ketone.
[4] The cover film with electromagnetic wave shield according to any one of [1] to [3], wherein,
the coating adhesive layer has a relative dielectric constant of less than 3.5 and a dielectric loss tangent of 0.010 or less.
[5] The cover film with electromagnetic wave shield according to any one of [1] to [4], wherein,
the shield layer further includes a shield adhesive layer provided on the surface of the conductive layer on the cover film side.
[6] The cover film with an electromagnetic wave shield according to [5], wherein,
the shielding layer adhesive layer has a relative dielectric constant of less than 3.5 and a dielectric loss tangent of 0.010 or less.
[7] The cover film with electromagnetic wave shield according to any one of [1] to [6], wherein,
the thickness of the conductive layer is 0.2 to 3 μm.
[8] The cover film with electromagnetic wave shield according to any one of [1] to [7], wherein,
the coefficient of thermal expansion of the coating film body is 2 x 10-5~30×10-5K-1
[9] The cover film with electromagnetic wave shield according to any one of [1] to [8], wherein,
the protective film is provided on a surface of the insulating resin layer opposite to the shield layer.
[10] The cover film with an electromagnetic wave shield according to [9], wherein,
the protective film has a protective film main body and a protective film adhesive layer provided on the surface of the protective film main body on the insulating resin layer side.
[11] The cover film with electromagnetic wave shield according to any one of [1] to [10], wherein,
the adhesive sheet further comprises a separator provided on a surface of the cover adhesive layer opposite to the cover main body.
[12] The cover film with an electromagnetic wave shield according to [11], wherein,
the separator has a separator main body and a separator adhesive layer provided on the surface of the separator on the cover adhesive layer side.
[13] The method for producing a cover film with electromagnetic wave shielding according to any one of [1] to [12], comprising:
a step of providing a shielding layer including a conductive layer on one surface of a cover film body including aromatic polyether ketone;
a step of providing an insulating resin layer on a surface of the shield layer on a side opposite to the cover film main body;
and a step of providing a cover adhesive layer on the surface of the cover main body opposite to the shield layer.
[14] A flexible printed wiring board with electromagnetic wave shielding comprising a flexible printed wiring board and the cover film with electromagnetic wave shielding according to any one of [1] to [8] bonded to the one surface, the flexible printed wiring board comprising a base material and wiring formed on at least one surface of the base material,
the coverlay adhesive layer of the cover film with an electromagnetic wave shield is adhered to the one surface of the flexible printed wiring board.
[15] A method for manufacturing a flexible printed wiring board having an electromagnetic wave shield, comprising the steps of:
the flexible printed wiring board comprising a base material and wiring formed on at least one surface of the base material, wherein the electromagnetic wave shielding coverlay is bonded to the at least one surface of the flexible printed wiring board via the coverlay adhesive layer of the electromagnetic wave shielding coverlay according to any one of [1] to [8 ].
Effects of the invention
According to the present invention, it is possible to provide a cover film with an electromagnetic wave shield and a method for manufacturing the same, and a flexible printed wiring board with an electromagnetic wave shield and a method for manufacturing the same, which can further improve the production efficiency of a printed wiring board with an electromagnetic wave shield.
Drawings
Fig. 1 is a cross-sectional view showing an example of the cover film with an electromagnetic wave shield according to the present invention.
Fig. 2 is a cross-sectional view showing another example of the cover film with electromagnetic wave shield according to the present invention.
Fig. 3 is a cross-sectional view showing an example of the flexible printed wiring board with electromagnetic wave shield of the present invention.
Fig. 4 is a cross-sectional view showing another example of the cover film with an electromagnetic wave shield according to the present invention.
Detailed Description
The following definitions of terms apply to the present description and claims.
The numerical range represented by the term "to" includes numerical values on both sides of the term.
The thickness of each layer of the film (cover film, separator film, protective film, etc.) and the cover film with electromagnetic wave shielding was measured at 5 randomly selected positions by using a digital length measuring machine (manufactured by Sanfeng corporation, LITEMATIC VL-50-B), and the thickness was averaged.
The thickness of the conductive layer was measured at five randomly selected positions using an eddy current film thickness meter, and averaged.
The storage elastic modulus is calculated from the stress applied to the measurement object and the detected strain, and is measured as one of the viscoelastic characteristics using a dynamic viscoelasticity measurement device that outputs as a function of temperature or time. In a range of less than
Figure BDA0002689536670000051
In the case of (2), the surface resistance is a surface resistivity measured by a four-terminal method (method according to JIS K7194: 1994 and JIS R1637: 1998) using a low-resistance resistivity meter (e.g., Loresta GP, ASP probe, manufactured by Mitsubishi chemical corporation) and is
Figure BDA0002689536670000052
In the above case, the surface resistivity is measured by a double-ring method (method according to JIS K6911: 2006) using a high resistivity meter (for example, Hiresta UP, URS probe, manufactured by mitsubishi chemical corporation).
The apparent shear viscosity, the relative crystallinity, the glass transition temperature, and the dielectric properties are values measured by the methods described later.
[ cover film with electromagnetic wave shield ]
The cover film with an electromagnetic wave shield according to the present invention includes an insulating resin layer, a shield layer including a conductive layer, and a cover film provided on the opposite side of the shield layer from the insulating resin layer.
The cover film 1 with electromagnetic wave shielding shown in fig. 1 includes an insulating resin layer 10, a shielding layer 20 including a conductive layer, and a cover film 40 provided on the side of the shielding layer 20 opposite to the insulating resin layer 10.
< insulating resin layer >
The insulating resin layer 10 is a protective layer of the shield layer 20.
Examples of the insulating resin layer 10 include a coating film (coating film) formed by applying a coating material containing a photocurable resin and a photo radical polymerization initiator and semi-curing or curing the coating material; a coating film formed by applying a coating material containing a thermosetting resin and a curing agent and semi-curing or curing the coating material; a coating film formed by applying a coating material containing a thermoplastic resin and drying the coating material; a layer composed of a film obtained by melt molding a composition containing a thermoplastic resin, and the like. From the viewpoint of heat resistance when the solder is subjected to a reflow step, a coating film formed by applying a coating material containing a photocurable resin and a photo radical polymerization initiator and semi-curing or curing the coating material, or a coating film formed by applying a coating material containing a thermosetting resin and a curing agent and semi-curing or curing the coating material is preferable.
It is preferable that the insulating resin layer 10 is a coating film formed by coating on the shield layer 20 because the adhesiveness between the insulating resin layer 10 and the shield layer 20 is improved.
Examples of the photocurable resin include a compound having a (meth) acryloyl group and the like.
Examples of the photo radical polymerization initiator include known photo radical polymerization initiators depending on the type of the photocurable resin.
Examples of the thermosetting resin include amide resins, epoxy resins, phenol resins, amino resins, alkyd resins, urethane resins, synthetic rubbers, and ultraviolet-curable acrylic resins. As the thermosetting resin, an amide resin and an epoxy resin are preferable from the viewpoint of excellent heat resistance. Examples of the curing agent include known curing agents depending on the kind of the thermosetting resin.
Examples of the thermoplastic resin include aromatic polyether ketone, polyimide, polyamideimide, polyamide, polysulfone, polyether sulfone, polyphenylene sulfide sulfone, polyphenylene sulfide ether ketone, and polyphenylene sulfide ether ketone.
In order to conceal the printed circuit of the printed wiring board or to impart design properties to the flexible printed wiring board with electromagnetic wave shielding, the insulating resin layer 10 may contain either or both of a colorant (pigment, dye, etc.) and a filler.
Either or both of the colorant and the filler are preferably a pigment or a filler from the viewpoint of weather resistance, heat resistance and concealing properties, and more preferably a black pigment or a combination of a black pigment and another pigment or a filler from the viewpoint of concealing properties and designing properties.
The insulating resin layer 10 may contain additives such as an antioxidant, a light stabilizer, an ultraviolet stabilizer, a plasticizer, a lubricant, a flame retardant, an antistatic agent, a heat resistance improver, an inorganic filler, and an organic filler, as long as the characteristics of the present invention are not impaired.
From the viewpoint of electrical insulation and practicality, the surface resistance of the insulating resin layer 10 is preferably 1.0 × 106~1.0×1019Ω/□。
The thickness of the insulating resin layer 10 is preferably 0.1 to 30 μm, more preferably 0.5 to 20 μm or less, and further preferably 1 to 10 μm.
If the thickness of the insulating resin layer 10 is within this range, the insulating resin layer 10 can further function as a protective layer. In addition, the cover film 1 having an electromagnetic wave shield can be further thinned.
< Shielding layer >
The shield layer 20 is a layer including a conductive layer.
The conductive layer may be a layer made of only a metal or a layer containing a component other than a metal. The metal included in the conductive layer may be in the form of a film, a particle, or other shapes. Examples of the component other than the metal include an adhesive resin for bonding metal particles to each other.
The conductive layer is preferably formed of a metal thin film layer.
The thickness of the conductive layer is preferably 0.2 to 3 μm.
The metal thin film layer made of a metal thin film is formed so as to spread in the plane direction, and therefore has conductivity in the plane direction, and functions as a layer for shielding electromagnetic waves.
Examples of the metal thin film layer include a vapor deposition film formed by physical vapor deposition (vacuum vapor deposition, sputtering, ion beam vapor deposition, electron beam vapor deposition, or the like) or chemical vapor deposition, a plating film formed by plating, and a metal foil.
The metal thin film layer is preferably a vapor deposited film or a plated film from the viewpoint of excellent conductivity in the plane direction. The metal thin film layer is preferably a vapor deposited film, and more preferably a vapor deposited film by physical vapor deposition, from the viewpoint that the shield layer 20 can be made thin, and even if the thickness is thin, the conductivity in the plane direction is excellent, and the film can be easily formed by a dry process.
The metal constituting the metal thin film layer is preferably at least one selected from the group consisting of silver, copper, aluminum, nickel, and gold, and more preferably silver or copper from the viewpoint of conductivity and cost.
Among the metal thin film layers, a metal vapor deposition layer is preferable, and a silver vapor deposition layer or a copper vapor deposition layer is more preferable because the metal thin film layer has high electromagnetic shielding properties and is easily formed.
The surface resistance of the metal thin film layer is preferably 0.001-1 Ω/□, more preferably 0.001-0.5 Ω/□, and still more preferably 0.001-0.1 Ω/□.
If the surface resistance of the metal thin film layer is within this range, the metal thin film layer can be further thinned. In addition, the electromagnetic wave shielding layer can function more sufficiently.
The thickness of the metal thin film layer is preferably 0.1 to 7 μm, more preferably 0.2 to 5 μm, and still more preferably 0.3 to 3 μm.
If the thickness of the metal thin film layer is within this range, the electrical conductivity in the plane direction is further improved, and the shielding effect of electromagnetic wave noise is further improved. In addition, the cover film 1 having an electromagnetic wave shield can be further thinned. Further, the productivity and flexibility of the cover film 1 with electromagnetic wave shielding are further improved.
As shown in the cover film 1' with electromagnetic wave shielding shown in fig. 2, the shielding layer 20 may include a conductive layer 22 disposed on the insulating resin layer 10 side and a shielding layer adhesive layer 24 disposed on the cover film 40 side.
Conductive layer 22 is as described above.
The shield layer adhesive layer 24 is preferably an insulating adhesive layer or a conductive adhesive layer.
(insulating adhesive layer)
Examples of the insulating adhesive layer include the same layers as those of the insulating resin layer 10.
The insulating adhesive layer is preferably a low dielectric adhesive layer containing a low dielectric adhesive agent made of an epoxy resin, a bismaleimide resin, a polyimide resin, an acid-modified polyolefin resin, an acrylic resin, or the like.
The relative dielectric constant ε of the low-dielectric adhesive layerrPreferably less than 3.5, more preferably 2.0 to 3.0.
If the relative dielectric constant ε of the film body 41 is coveredrWithin this range, the dielectric constant is low, and the increase in transmission loss of 10GHz or more can be sufficiently suppressed.
Here, the relative dielectric constant εrIs defined by the following mathematical formula.
εr=ε/ε0
Wherein ε is a dielectric constant of the low dielectric adhesive layer0The dielectric constant of a vacuum.
The dielectric constant ε can be obtained by measuring at 1GHz in an ambient temperature environment by a perturbation system sample hole-closed cavity resonator method (according to ASTM D2520, (JIS C2565: 1992)).
The lower the relative dielectric constant of the low dielectric adhesive layer, the more excellent the high frequency characteristics, transmission characteristics, dielectric loss, and the like.
The dielectric loss tangent of the resin forming the low dielectric adhesive layer is preferably 0.010 or less, more preferably 0.005 or less, and even more preferably 0.003 or less.
The lower the dielectric loss tangent of the low dielectric adhesive layer, the more excellent the high frequency characteristics, transmission characteristics, and the like.
The glass transition temperature of the low dielectric adhesive layer is preferably 30 to 180 ℃, more preferably 40 to 175 ℃, and still more preferably 45 to 160 ℃.
If the glass transition temperature of the low dielectric adhesive layer is within this range, when the shield layer adhesive layer 24, which is a low dielectric adhesive layer, is heated to bond the conductive layer 22 to the cover film body 41, the shield layer adhesive layer 24 is heated at a temperature lower than about the glass transition temperature, whereby the bonding can be easily performed, and the bonding strength with the cover film body 41 including polyether ether ketone (PEEK) can be further enhanced.
The glass transition temperature of the low dielectric adhesive layer is determined in accordance with JIS K7244-2: 1998 was determined as the temperature of the discontinuity point of the loss elastic modulus E ″ obtained by the dynamic viscoelasticity measurement (temperature rise rate 3 ℃/min, frequency 1Hz, tensile mode) of the low dielectric adhesive layer.
The low-dielectric adhesive layer may contain either or both of a colorant (pigment, dye, etc.) and a filler.
Either or both of the colorant and the filler are preferably a pigment or a filler from the viewpoint of weather resistance, heat resistance and concealing properties, and more preferably a black pigment or a combination of a black pigment and another pigment or a filler from the viewpoint of concealing properties and designing properties.
The low dielectric adhesive layer may contain additives such as an antioxidant, a light stabilizer, an ultraviolet stabilizer, a plasticizer, a lubricant, a flame retardant, an antistatic agent, a heat resistance improver, an inorganic filler, and an organic filler, within a range not to impair the characteristics of the present invention.
From the viewpoint of electrical insulation and practicality, the surface resistance of the low dielectric adhesive layer is preferably 1.0 × 106~1.0×1019Ω/□。
The thickness of the low dielectric adhesive layer is preferably 2 to 50 μm, and more preferably 5 to 30 μm.
If the thickness of the low dielectric adhesive layer is within this range, the low dielectric adhesive layer can further function as an adhesive layer. In addition, the cover film 1' having the electromagnetic wave shield can be further thinned.
(conductive adhesive layer)
The conductive adhesive layer is preferably an isotropic conductive adhesive layer.
The isotropic conductive adhesive layer is conductive in the thickness direction and the surface direction and has adhesiveness.
The isotropic conductive adhesive layer has an advantage of further improving the electromagnetic wave shielding property of the cover film 1' with electromagnetic wave shielding.
The isotropic conductive adhesive layer is preferably a thermosetting conductive adhesive layer in view of exhibiting heat resistance after curing.
The thermosetting isotropic conductive adhesive layer may be in an uncured state or in a B-stage state.
The thermosetting isotropic conductive adhesive layer contains, for example, a thermosetting adhesive (hereinafter referred to as "thermosetting adhesive (C)") and conductive particles (hereinafter referred to as "conductive particles (D)"). The thermosetting isotropic conductive adhesive layer may contain a flame retardant as necessary.
Examples of the thermosetting adhesive (a) include epoxy resins, phenol resins, amino resins, alkyd resins, urethane resins, synthetic rubbers, and ultraviolet-curable acrylic resins. From the viewpoint of excellent heat resistance, an epoxy resin is preferable. The epoxy resin may contain a rubber component (carboxyl-modified nitrile rubber, acrylic rubber, etc.) for imparting flexibility, a tackifier, and the like.
The thermosetting adhesive (a) may contain a cellulose resin, microfibrils (glass fibers, etc.), and the like in order to improve the strength of the isotropic conductive adhesive layer and improve the perforation property. The thermosetting adhesive (a) may contain other components (curing agent, etc.) as necessary within a range not impairing the effects of the present invention.
Examples of the conductive particles (C) include metal particles (silver, platinum, gold, copper, nickel, palladium, aluminum, solder, and the like), graphite powder, calcined carbon particles, plated calcined carbon particles, and the like. The isotropic conductive adhesive layer also has an appropriate hardness as the conductive particles (C), and from the viewpoint of further reducing the pressure loss of the isotropic conductive adhesive layer during hot pressing, metal particles are preferable, and copper particles are more preferable.
The average particle diameter of the conductive particles (D) in the isotropic conductive adhesive layer is preferably 0.001 to 5 μm, and more preferably 0.002 to 1 μm.
When the average particle diameter of the conductive particles (D) is within this range, the number of contact points of the conductive particles (D) increases, and the conductivity in the three-dimensional direction can be stably improved.
The proportion of the conductive particles (D) in the isotropic conductive adhesive layer is preferably 30 to 80 vol%, more preferably 40 to 70 vol% of 100 vol% of the isotropic conductive adhesive layer.
When the ratio of the conductive particles (D) is within this range, the conductivity of the isotropic conductive adhesive layer is further improved.
The storage elastic modulus at 180 ℃ of the isotropic conductive adhesive layer is preferably 1X 103~5×107Pa, more preferably 5X 103~1×107Pa。
If the storage elastic modulus of the isotropic conductive adhesive layer at 180 ℃ is within this range, the isotropic conductive adhesive layer also has an appropriate hardness, and the pressure loss of the isotropic conductive adhesive layer during hot pressing can be reduced. As a result, the isotropic conductive adhesive layer and the circuit of the flexible printed wiring board are sufficiently bonded. In addition, the flexibility of the cover film 1' with electromagnetic wave shield is further improved.
The surface resistance of the isotropic conductive adhesive layer is preferably 0.005 to 2.0 Ω/□, and more preferably 0.001 to 1.0 Ω/□.
If the surface resistance of the isotropic conductive adhesive layer is within this range, the content of the conductive particles (D) is suppressed to be lower, the viscosity of the conductive adhesive is not excessively high, and the coatability is more favorable.
The thickness of the isotropic conductive adhesive layer is preferably 0.2 to 10 μm, more preferably 0.5 to 8 μm, and still more preferably 1 to 5 μm.
When the thickness of the isotropic conductive adhesive layer is within this range, the isotropic conductive adhesive layer has better conductivity and can sufficiently function as an electromagnetic wave shielding layer. Further, the folding endurance is easily ensured, and the isotropic conductive adhesive layer is not easily broken even if repeatedly bent. In addition, the cover film 1' having the electromagnetic wave shield can be further thinned. Moreover, the flexibility of the cover film 1' with electromagnetic wave shield is further improved.
< covering film >
The cover 40 includes a cover main body 41 and a cover adhesive layer 42 provided on the surface of the cover main body 41 opposite to the shield layer 20.
(cover film body)
The cover film body 41 is a polymer film, and examples thereof include a polyimide film, a polyamideimide film, a polyethersulfone film, a polyphenylenesulfone film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polyparaphenylene terephthalamide film, an aromatic polyether ketone film, a liquid crystal polymer film, and the like.
Among them, an aromatic polyether ketone film and a liquid crystal polymer film having a low dielectric constant are preferable, and an aromatic polyether ketone film having a good film forming property at the time of production is preferable.
The aromatic polyether ketone is a polymer having a structure in which benzene rings are bonded to each other via an ether bond and a structure in which benzene rings are bonded to each other via a ketone group.
Examples of the aromatic polyether ketone include polyether ether ketone (PEEK) having a chemical structure represented by the following formula (P1), polyether ketone (PEK) having a chemical structure represented by the following formula (P2), polyether ketone (PEKK) having a chemical structure represented by the following formula (P3), polyether ether ketone (PEEKK) having a chemical structure represented by the following formula (P4), and polyether ketone ether ketone (PEKEKK) having a chemical structure represented by the following formula (P5). The aromatic polyether ketone contained in the low dielectric adhesive layer may be one kind or two or more kinds.
The aromatic polyether ketone may have two or more chemical structures represented by the following formulae (P1) to (P5).
Further, both terminals of the aromatic polyether ketone are hydrogen atoms.
The aromatic polyether ketone used for the cover film 1' having an electromagnetic wave shield is preferably polyether ether ketone or polyether ketone from the viewpoints of film formability, heat resistance, flexibility, and the like, and among them, polyether ether ketone having excellent film formability is preferable.
In the case where the cover film 1' having an electromagnetic wave shield is used to improve heat resistance, the aromatic polyether ketone is preferably polyether ketone, polyether ketone, or polyether ketone ether ketone.
The glass transition temperature of the polyether ketone is 152 ℃, the glass transition temperature of the polyether ketone is 154 ℃, the glass transition temperature of the polyether ketone ether ketone is 162 ℃ and is higher than the glass transition temperature of the polyether ether ketone by 143 ℃. Therefore, it is suitable for applications where heat resistance is required. The glass transition temperature of the aromatic polyether ketone is determined by Differential Scanning Calorimetry (DSC).
[ chemical formula 1]
Figure BDA0002689536670000141
From the viewpoint of mechanical properties, n in each of the formulae (P1) to (P5) is preferably 10 or more, and more preferably 20 or more. On the other hand, from the viewpoint of ease of production of the aromatic polyether ketone, n is preferably 5000 or less, and more preferably 1000 or less. Namely, it is preferably 10 to 5000, and more preferably 20 to 1000.
When the aromatic polyether ketone has crystallinity, the relative crystallinity is preferably 5% or more and less than 80%, more preferably 5 to 50%, and further preferably 5 to 30%.
If the relative crystallinity is within this range, the rigidity of the cover film 1' having an electromagnetic wave shield is more appropriate.
The relative crystallinity is calculated from the following numerical expression based on the thermal analysis result measured at a temperature rise rate of 10 ℃/minute using a differential scanning calorimeter.
Relative crystallinity (%) {1- (Δ Hc/Δ Hm) } × 100
Δ Hc: heat of recrystallization Peak (J/g)
Δ Hm: heat of crystallization melting Peak (J/g)
The cover film body 41 contains the aromatic polyether ketone to reduce the dielectric constant, thereby suppressing an increase in transmission loss in a high frequency region of 10GHz or more.
When the cover film body 41 contains the polyether ether ketone (PEEK) and an aromatic polyether ketone (PEK, PEKK, PEEKK, PEKK) other than the polyether ether ketone (PEEK), the proportion of the polyether ether ketone represented by the formula (P1) is preferably 50 to 100 mol%, more preferably 70 to 100 mol%, even more preferably 80 to 100 mol%, and most preferably 95 to 100 mol%, based on 100 mol% of the total molar number of the aromatic polyether ketone contained in the cover film body 41.
The polyether ether ketone (PEEK) may be a block copolymer, a random copolymer, or a modified product of the PEEK and another copolymerizable monomer such as ether sulfone, as long as the effects of the present invention are not impaired.
In this case, the proportion of the polyether ether ketone (PEEK), i.e., the polyether ketone unit represented by the formula (P1), is preferably 50 to 100 mol%, more preferably 70 to 100 mol%, even more preferably 80 to 100 mol%, and most preferably 100 mol% with respect to the total repeating structural units (100 mol%) of the polyether ether ketone.
The method for producing the aromatic polyether ketone, particularly the method for producing polyether ether ketone, is disclosed in, for example, Japanese patent application laid-open Nos. 50-27897, 51-119797, 52-38000, 54-90296, 55-23574 and 56-2091.
In addition to the polyether ether ketone (PEEK) and the aromatic polyether ether ketone (PEEK) other than the polyether ether ketone (PEEK), the cover film body 41 may contain another resin. Examples of the other resin include polyimide, polyamideimide, polyamide, polysulfone, polyethersulfone, polyphenylenesulfone, polyphenylenesulfide sulfone, polyphenylenesulfide ketone, and the like.
In this case, the total content of the polyether ether ketone (PEEK) and the aromatic polyether ether ketone other than the polyether ether ketone (PEEK) in the cover film body 41 is preferably 50 to 100 mass%, more preferably 70 to 100 mass%, and still more preferably 80 to 100 mass%.
The Coefficient of Thermal Expansion (CTE) of the cover film body 41 is preferably 2X 10-5~30×10-5K-1More preferably 2X 10-5~10×10-5K-1
Here, the CTE is obtained by measurement based on thermomechanical analysis (TMA).
Relative dielectric constant ε of the coating film body 41rPreferably 2.0 to 5.0, more preferably 2.0 to 4.0, and further preferably 2.0 to 3.0.
If the relative dielectric constant ε of the film body 41 is coveredrWithin this range, the dielectric constant is low, and the increase in transmission loss of 10GHz or more can be sufficiently suppressed.
Here, the relative dielectric constant εrIs defined by the following mathematical formula.
εr=ε/ε0
Wherein ε is the dielectric constant of the coating film body 410The dielectric constant of a vacuum. The dielectric constant ε can be obtained by measuring the dielectric constant at 1GHz in an ambient temperature environment by a perturbation method, namely, a closed-pore cavity resonator method (according to ASTM D2520(JIS C2565)).
The dielectric loss tangent of the coating film body 41 is preferably 0.010 or less, more preferably 0.005 or less, and still more preferably 0.003 or less.
The lower the dielectric loss tangent of the coat film body 41, the more excellent the high frequency characteristics, transmission characteristics, and the like.
From the viewpoint of electrical insulation and practicality, the surface resistance of the cover film body 41 is preferably 1.0 × 106~1.0×1019Ω/□。
The thickness of the cover film body 41 is preferably 1 to 100 μm, and more preferably 3 to 25 μm from the viewpoint of flexibility.
(cover adhesive layer)
Examples of the material of the cover adhesive layer 42 include epoxy resin, polyester, polyimide, polyamideimide, polyamide, phenol resin, polyurethane resin, acrylic resin, melamine resin, polystyrene, polyolefin, and the like.
In addition, the low dielectric adhesive is also preferable as a material of the cover adhesive layer 42 because it contributes to the reduction of the dielectric constant of the entire cover film 40.
The thickness of the cover adhesive layer is preferably 1 to 100 μm, more preferably 1.5 to 60 μm, and still more preferably 5 to 30 μm.
Relative dielectric constant ε of cover adhesive layer 42rPreferably 2.0 to 5.0, more preferably 2.0 to 4.0, and further preferably 2.0 to 3.0.
If the relative dielectric constant ε of the coating adhesive layer 42rWithin this range, the dielectric constant is low and the increase in transmission loss of 10GHz or more can be sufficiently suppressed.
The dielectric loss tangent of the cover adhesive layer 42 is preferably 0.010 or less, more preferably 0.005 or less, and still more preferably 0.003 or less.
The lower the dielectric loss tangent of the cover adhesive layer 42, the more excellent the high frequency characteristics, transmission characteristics, and the like.
< protective film >
As shown in the cover film with electromagnetic wave shield 1 ″ shown in fig. 4, the cover film with electromagnetic wave shield of the present invention may further include a protective film 60 provided on the surface of the insulating resin layer 10 opposite to the shield layer 20.
The protective film 60 is a support for reinforcing and protecting the insulating resin layer 10 and the shield layer 20, and improves the workability of the cover film 1 ″ having an electromagnetic wave shield. Particularly, when a thin film, specifically a film having a thickness of 1 to 10 μm, is used as the insulating resin layer 10, the protective film 60 is provided, thereby preventing the insulating resin layer 10 from being broken.
After the cover film 1 with electromagnetic wave shielding is attached to the flexible printed wiring board, the protective film 60 is peeled off from the insulating resin layer 10.
The thickness of the protective film 60 is preferably 25 to 125 μm or less, and more preferably 38 to 100 μm or less.
If the thickness of the protective film 60 is within this range, the workability of the cover film 1 ″ with electromagnetic wave shielding is further improved. In addition, when the cover film 1 ″ with electromagnetic wave shielding is hot-pressed onto the flexible printed wiring board, heat is easily transferred.
The protective film 60 includes a protective film main body 61 and a protective film adhesive layer 62 provided on the surface of the protective film main body 61 on the insulating resin layer 10 side.
(protective film body)
Examples of the resin material of the protective film main body 61 include polyethylene terephthalate (hereinafter, referred to as "PET"), polyethylene naphthalate, polyethylene isophthalate, polybutylene terephthalate, polyolefin, polyacetate, polycarbonate, polyphenylene sulfide, polyamide, ethylene-vinyl acetate copolymer, polyvinyl chloride, polyvinylidene chloride, synthetic rubber, and liquid crystal polymer.
The resin material is preferably PET from the viewpoint of heat resistance (dimensional stability) and price in the production of the cover film 1 ″ having an electromagnetic wave shield.
The protective film main body 61 may contain either or both of a colorant (pigment, dye, etc.) and a filler.
Either or both of the colorant and the filler are clearly distinguishable from the insulating resin layer 10, and from the viewpoint that the peeling residue of the protective film 60 after hot pressing is easily visible, a preparation of a color different from that of the insulating resin layer 10 is preferred, and a white pigment, a filler, or a combination of a white pigment and another pigment or a filler is more preferred.
The storage elastic modulus of the protective film body 61 at 180 ℃ is preferably 8X 107~5×109Pa, more preferably 1X 108~8×108Pa。
If the storage elastic modulus of the protective film main body 61 at 180 ℃ is within this range, the protective film 60 has an appropriate hardness, and the pressure loss of the protective film 60 at the time of hot pressing can be reduced. In addition, the flexibility of the protective film 60 is good.
The thickness of the protective film body 61 is preferably 3 to 100 μm, and more preferably 12 to 75 μm.
If the thickness of the protective film main body 61 is within this range, the workability of the cover film 1 ″ with electromagnetic wave shielding is good. In addition, when the cover film 1 ″ with electromagnetic wave shielding is hot-pressed onto the flexible printed wiring board, heat is easily transferred.
(protective film adhesive layer)
The protective film adhesive layer 62 is formed by, for example, applying an adhesive composition containing an adhesive (hereinafter, referred to as "adhesive (E)") to the surface of the protective film main body 61. The protective film 60 has the protective film adhesive layer 62, and thus the protective film 60 can be prevented from being unintentionally peeled off from the insulating resin layer 10 when the cover film 1 ″ with electromagnetic wave shielding is handled. As a result, the protective film 60 can sufficiently function as a protective film.
The adhesive (E) is preferably an adhesive that imparts an appropriate level of adhesiveness to the protective film adhesive layer 62 to such an extent that the protective film 60 is not easily peeled from the insulating resin layer 10 before hot pressing and the protective film 60 can be peeled from the insulating resin layer 10 after hot pressing.
Examples of the adhesive (E) include an acrylic adhesive, a urethane adhesive, and a rubber adhesive.
The glass transition temperature of the adhesive (E) is preferably-100 to 60 ℃, more preferably-60 to 40 ℃.
The thickness of the protective film adhesive layer 62 is preferably 22 to 97 μm or less, and more preferably 26 to 88 μm.
If the thickness of the protective film adhesive layer 62 is within this range, the workability of the cover film 1 ″ with electromagnetic wave shielding is further improved. In addition, when the cover film 1 with electromagnetic wave shielding is hot-pressed onto the flexible printed wiring board, heat is easily transferred.
< isolating Membrane >
As shown in the cover film with electromagnetic wave shield 1 ″ shown in fig. 4, the cover film with electromagnetic wave shield of the present invention may further include a separator 70.
The release film 70 is a film that protects the cover adhesive layer 42. Before the cover film 1 with electromagnetic wave shielding is attached to a printed wiring board or the like, the separator 70 is peeled off from the cover adhesive layer 42.
The separator 70 may be constituted only by the separator main body 71, or may have the separator main body 71 and the separator adhesive layer 72 provided on the surface of the separator main body 71 on the side of the welding adhesive layer.
(Main body of separator)
The resin material of the separator body 71 is the same as the resin material of the protective film body 61.
The separator body 71 may contain a colorant, a filler, and the like.
The thickness of the separator body 71 is preferably 5 to 500 μm, more preferably 10 to 150 μm, and still more preferably 25 to 100 μm.
(Release film adhesive layer)
The release film adhesive layer 72 is formed by, for example, applying an adhesive composition containing an adhesive (hereinafter referred to as "adhesive (F)") to the surface of the release film main body 71. Since the separator 70 has the separator adhesive layer 72, the separator 70 is easily peeled off when the separator 70 is peeled off from the cover layer adhesive layer 42, and the cover layer adhesive layer 42 is hardly broken.
The adhesive (F) is preferably an adhesive that imparts appropriate adhesiveness to the release film adhesive layer 72 to such an extent that the release film 70 is not easily peeled off from the cover film 40 before the hot pressing and the release film 70 can be peeled off from the cover film 40 after the hot pressing.
Examples of the adhesive (F) include an acrylic adhesive, a urethane adhesive, and a rubber adhesive.
The glass transition temperature of the adhesive (F) is preferably-100 to 60 ℃, more preferably-60 to 40 ℃.
The thickness of the release film adhesive layer 72 is preferably 0.05 to 30 μm, and more preferably 0.1 to 20 μm.
If the thickness of the release film adhesive layer 72 is within this range, the release film 70 is further easily peeled off.
[ method for producing coating film with electromagnetic wave shield ]
The cover film with an electromagnetic wave shield of the present invention can be produced by a method for producing a cover film with an electromagnetic wave shield, the method for producing the cover film with an electromagnetic wave shield including, for example: a step (a) of providing a shielding layer 20 including a conductive layer on a surface of one side of a cover film body 41 including polyether ether ketone (PEEK); a step (b) of providing an insulating resin layer 10 on the surface of the shield layer 20 opposite to the cover film body 41; and (c) providing a cover adhesive layer 42 on the surface of the cover film body 41 opposite to the shield layer 20.
Hereinafter, a method of manufacturing the cover film 1 with an electromagnetic wave shield shown in fig. 1 will be described as an example.
A step (a):
first, a resin film containing polyether ether ketone (PEEK) constituting the cover film body 41 is prepared. The resin film containing PEEK is obtained by a well-known extrusion molding method.
Next, the shield layer 20 is formed on one surface of the cover film body 41 by, for example, metal vapor deposition. Instead of metal vapor deposition, the shield layer 20 may be formed by attaching a metal foil or coating a conductive composition containing conductive particles.
A step (b):
on the surface of the shield layer 20 opposite to the cover film body 41, for example, a coating material containing a thermosetting resin and a curing agent is applied and semi-cured or cured to form an insulating resin layer.
A step (c):
on the other surface of the cover film body 41 (the surface opposite to the side on which the shield layer 20 is formed), for example, the low dielectric adhesive is applied and semi-cured or cured to form the cover adhesive layer 42.
The method may further include the step (d) of attaching the protective film 60 to the surface of the insulating resin layer 10 opposite to the shield layer 20 and the step (e) of attaching the release film 70 to the surface of the cover adhesive layer 42 opposite to the cover film body 41. The obtained coating film with electromagnetic wave shield can be easily handled.
[ Flexible printed Wiring Board with electromagnetic wave Shielding ]
The flexible printed wiring board with electromagnetic wave shield 2 of the present invention shown in fig. 3 includes a flexible printed wiring board 50 having a base material 52 and wiring 54 formed on at least one surface of the base material 52, and an electromagnetic wave shield-equipped coverlay 1 bonded to the one surface, and the coverlay adhesive layer 42 of the electromagnetic wave shield-equipped coverlay 1 is bonded to the one surface of the flexible printed wiring board 50.
< Flexible printed Wiring Board >
The flexible printed wiring board 50 is a substrate in which copper foil of a copper clad laminate is processed into a desired pattern by a known etching method to be used as the wiring 54.
Examples of the copper clad laminate include a board in which a copper foil is attached to one surface or both surfaces of the base material 52 via an adhesive layer, a board in which a resin solution for forming the base material 52 is cast on the surface of the copper foil, and the like. Examples of the material of the adhesive layer include epoxy resin, polyester, polyimide, polyamideimide, polyamide, phenol resin, polyurethane resin, acrylic resin, melamine resin, and the like.
The thickness of the adhesive layer is preferably 0.5 to 50 μm, and more preferably 1 to 30 μm.
Examples of the copper foil constituting the wiring 54 include a rolled copper foil, an electrolytic copper foil, and the like, and from the viewpoint of flexibility, a rolled copper foil is preferable. The wiring 54 can be used as a signal circuit, a ground layer, or the like, for example.
The thickness of the copper foil is preferably 1 to 50 μm, and more preferably 18 to 35 μm.
The end portions (terminals) of the wires 54 in the longitudinal direction are exposed by being not covered with the cover film 1 having an electromagnetic wave shield due to solder connection, connector connection, component mounting, and the like.
As the substrate 52, a film made of a resin having a low relative dielectric constant can be used. When the cover adhesive layer 42 of the cover film 1 with an electromagnetic wave shield includes a low dielectric constant adhesive, the adhesiveness to the base material 52 made of a low dielectric constant resin is improved.
The relative dielectric constant of the resin forming the base material 52 is preferably 2.0 to 5.0, more preferably 2.0 to 4.0, and still more preferably 2.0 to 3.0.
The lower the relative dielectric constant of the substrate 52, the more excellent the high-frequency characteristics, transmission characteristics, dielectric loss, and the like.
The dielectric loss tangent of the resin forming the substrate 52 is preferably 0.010 or less, more preferably 0.005 or less, and even more preferably 0.003 or less.
The lower the dielectric loss tangent of the substrate 52, the more excellent the high frequency characteristics, transmission characteristics, and the like.
From the viewpoint of obtaining practical electrical insulation, the surface resistance of the base material 52 is preferably 1 × 106~1×1019Ω/□。
The thickness of the substrate 52 is preferably 5 to 200 μm, more preferably 6 to 50 μm, and still more preferably 10 to 25 μm from the viewpoint of flexibility.
Specific examples of the resin forming the substrate 52 include liquid crystal polymers, aromatic polyether ketones such as polyether ether ketone and polyether ketone, and polyimides.
The resin is preferably a liquid crystal polymer or polyimide because of its high electrical insulation, chemical resistance, heat resistance, flame retardancy, and mechanical strength and its low coefficient of linear expansion, and is particularly preferably a liquid crystal polymer because of its more excellent high-frequency characteristics.
The liquid crystal polymer is one of thermoplastic polymers, and is an aromatic polyester resin in which p-hydroxybenzoic acid and other monomers are ester-bonded in a straight chain state.
Specific examples of the liquid crystal polymer include a polycondensate of ethylene terephthalate and p-hydroxybenzoic acid represented by the following formula (LCP-1), a polycondensate of phenol, phthalic acid and p-hydroxybenzoic acid represented by the following formula (LCP-2), a polycondensate of 2, 6-hydroxynaphthoic acid and p-hydroxybenzoic acid represented by the following formula (LCP-3), and the like.
[ chemical formula 2]
Figure BDA0002689536670000241
In the formula (LCP-1), the formula (LCP-2) and the formula (LCP-3), m and n are each independently an integer of 1 or more.
The polyimide preferably contains a repeating structural unit represented by the following formula (1) and a repeating structural unit represented by the following formula (2), wherein the content ratio of the repeating structural unit represented by the following formula (1) to the total of the repeating structural unit represented by the following formula (1) and the repeating structural unit represented by the following formula (2) is 20 to 70 mol%, and the polyimide preferably contains a chain aliphatic group having 5 to 14 carbon atoms at the terminal.
[ chemical formula 3]
Figure BDA0002689536670000242
In the formula (1), R1Is a divalent group having 6 to 22 carbon atoms containing at least one alicyclic hydrocarbon structure, X1Is a tetravalent group having 6 to 22 carbon atoms comprising at least one aromatic ring. In the formula (2), R2Is a divalent chain aliphatic group having 5 to 16 carbon atoms, X2Is a tetravalent group having 6 to 22 carbon atoms comprising at least one aromatic ring.
The polyimide is obtained by combining specific different polyimide structural units at a specific ratio, and has a specific structure at the end, so that it is excellent in moldability and heat resistance, and is also excellent in thermal aging resistance.
R in the above formula (1)1Is a divalent group having 6 to 22 carbon atoms and containing at least one alicyclic hydrocarbon structure. Here, the alicyclic hydrocarbon structure refers to a ring derived from an alicyclic hydrocarbon compound, and the alicyclic hydrocarbon compound may be saturated or unsaturated, and may be monocyclic or polycyclic.
Examples of the alicyclic hydrocarbon structure include a cycloalkane ring such as a cyclohexane ring, a cycloalkene ring such as cyclohexene, a bicycloalkane ring such as a norbornane ring, and a bicycloalkene ring such as norbornene. Among them, preferred is a cycloalkane ring, more preferred is a cycloalkane ring having 4 to 7 carbon atoms, and further preferred is a cyclohexane ring.
R1The number of carbon atoms of (A) is 6 to 22, preferably 8 to 17.
R1The number of alicyclic hydrocarbon structures contained is at least one, and preferably 1 to 3. R1The divalent group represented by the following formula (R1-1) or (R1-2) is preferable, and the divalent group represented by the following formula (R1-3) is more preferable.
[ chemical formula 4]
Figure BDA0002689536670000251
In the formula (R1-1), m11And m12Each independently is an integer of 0 to 2.
In the formula (R1-2), m13~m15Each independently is an integer of 0 to 2.
[ chemical formula 5]
Figure BDA0002689536670000252
In the divalent group represented by the formula (R1-3), the positional relationship between the two methylene groups with respect to the cyclohexane ring may be cis-form or trans-form, or both of the cis-form and the trans-form may be mixed. The cis-to trans-ratio may be any ratio.
X in the above formula (1)1Is a tetravalent group having 6 to 22 carbon atoms comprising at least one aromatic ring. The aromatic ring may be a monocyclic ring or a condensed ring, and examples thereof include a benzene ring, a naphthalene ring, an anthracene ring and a tetracene ring. Among them, preferred are benzene ring and naphthalene ring, and more preferred is benzene ring.
X1The number of carbon atoms of (A) is 6 to 22, more preferably 6 to 18.
X1The number of aromatic rings is at least one, and more preferably 1 to 3.
X1It is preferably tetravalent represented by any of the following formulae (X-1) to (X-4)A group.
[ chemical formula 6]
Figure BDA0002689536670000261
In the formula, R11~R18Each independently an alkyl group having 1 to 4 carbon atoms, p11~p13Each independently is an integer of 0 to 2, p14、p15、p16And p18Each independently is an integer of 0 to 3, p17Is an integer of 0 to 4, L11~L13Each independently a single bond, an ether group, a carbonyl group or an alkylene group having 1 to 4 carbon atoms.
X1Is a tetravalent group having 6 to 22 carbon atoms comprising at least one aromatic ring, and is represented by the formula (X-2)12、R13、p12And p13The number of carbon atoms of the tetravalent group represented by the formula (X-2) is selected to fall within the range of 6 to 22.
Also, L in the formula (X-3)11、R14、R15、p14And p15Selected so as to fall within the range of 6 to 22 carbon atoms of the tetravalent group represented by formula (X-3), wherein L in formula (X-4)12、L13、R16、R17、R18、p16、p17And p18The number of carbon atoms of the tetravalent group represented by the formula (X-4) is selected to fall within the range of 6 to 22.
X1Particularly preferred is a tetravalent group represented by the following formula (X-5) or (X-6).
[ chemical formula 7]
Figure BDA0002689536670000271
R of the above formula (2)2The divalent chain aliphatic group (2) has 5 to 16 carbon atoms, preferably 5 to 14 carbon atoms, and more preferably 5 to 12 carbon atoms. The chain aliphatic group means a group derived from a chain aliphatic compound, and is subjected to chain aliphatizationThe compound may be saturated or unsaturated, may be linear or branched, and may contain a hetero atom such as an oxygen atom. R2The alkylene group (B) preferably has 5 to 16 carbon atoms, more preferably 5 to 14 carbon atoms, and further preferably 5 to 12 carbon atoms. Among them, an alkylene group having 6 to 12 carbon atoms is preferable, and an alkylene group having 6 to 10 carbon atoms is more preferable. The alkylene group may be a linear alkylene group or a branched alkylene group, and is preferably a linear alkylene group.
R2Particularly preferred is at least one selected from the group consisting of hexamethylene, octamethylene and decamethylene.
R2Also preferred is a divalent chain aliphatic group having 5 to 16 carbon atoms, which contains an ether group. The number of carbon atoms is preferably 5 to 14, more preferably 5 to 12.
Wherein R is2Particularly preferred is a divalent group represented by the following formula (R2-1) or (R2-2).
[ chemical formula 8]
Figure BDA0002689536670000272
In the formula, m21And m22Each independently is an integer of 1 to 15, preferably 1 to 13, more preferably 1 to 11, and further preferably 2 to 6. m is23~m25Each independently is an integer of 1 to 14, preferably 1 to 12, more preferably 1 to 10, and further preferably 2 to 4.
R2The number of carbon atoms of the divalent chain aliphatic group (2) is 5 to 16, preferably 5 to 14, and more preferably 5 to 12. Therefore, m in the above formula (R2-1)21And m22The number of carbon atoms falling within the range of 5 to 16 (preferably 5 to 14, more preferably 5 to 12) of the divalent group represented by the formula (R2-1) is selected. I.e. m21+m225 to 16 (preferably 5 to 14, more preferably 5 to 12).
Similarly, m in the formula (R2-2)23~m25The divalent group represented by the formula (R2-2) has 5 to 16 carbon atoms (preferably 5 to 14 carbon atoms), more preferably 5 to 14 carbon atoms5 to 12) is selected. I.e. m23+m24+m255 to 16 (preferably 5 to 14, more preferably 5 to 12).
X in the above formula (2)2And X in the above formula (1)1The same definitions apply to the preferred embodiments.
The content ratio of the repeating structural unit of the formula (1) to the total of the repeating structural unit of the formula (1) and the repeating structural unit of the formula (2) is 20 to 70 mol%.
When the content ratio of the repeating structural unit of the formula (1) is within this range, the polyimide can be easily crystallized. In addition, molding processability and heat resistance are improved.
From the viewpoint of moldability and ease of crystallization, the content ratio of the repeating structural unit of formula (1) to the total of the repeating structural unit of formula (1) and the repeating structural unit of formula (2) is preferably 25 to 65 mol%, more preferably 30 to 60 mol%, and still more preferably 32 to 57 mol%.
The content ratio of the total of the repeating structural unit of the formula (1) and the repeating structural unit of the formula (2) to the total repeating units constituting the polyimide is preferably 50 to 100 mol%, more preferably 75 to 100 mol%, further preferably 80 to 100 mol%, and particularly preferably 85 to 100 mol%.
The polyimide may further contain a repeating structural unit represented by the following formula (3). In this case, the content ratio of the repeating structural unit of the following formula (3) to the total of the repeating structural unit of the formula (1) and the repeating structural unit of the formula (2) is preferably 25 mol% or less. On the other hand, the lower limit is not particularly limited, and may be more than 0 mol%.
The content ratio is preferably 5 to 20 mol%, and more preferably 10 to 15 mol%, from the viewpoint of improvement in heat resistance and easiness of crystallization.
[ chemical formula 9]
Figure BDA0002689536670000291
In the formula, R3Is a divalent group of 6 to 22 carbon atoms containing at least one aromatic ring, X3Is a tetravalent group having 6 to 22 carbon atoms comprising at least one aromatic ring.
R3Is a divalent group having 6 to 22 carbon atoms and containing at least one aromatic ring. The aromatic ring may be a monocyclic ring or a condensed ring, and examples thereof include a benzene ring, a naphthalene ring, an anthracene ring and a tetracene ring. Among them, preferred are benzene ring and naphthalene ring, and more preferred is benzene ring.
R3The number of carbon atoms of (A) is 6 to 22, preferably 6 to 18.
R3The number of aromatic rings is at least one, and more preferably 1 to 3.
A monovalent or divalent electron-withdrawing group may be bonded to the aromatic ring. Examples of the monovalent electron-withdrawing group include nitro, cyano, p-toluenesulfonyl, halogen, haloalkyl, phenyl, and acyl groups. As divalent electron-withdrawing groups, fluoro-alkylene groups (e.g. -C (CF)3)2-、-(CF2)pExamples of the halogenated alkylene group include-CO-, -SO- (wherein p is an integer of 1 to 10))2-, -SO-, -CONH-, -COO-, and the like.
R3Preferred is a divalent group represented by the following formula (R3-1) or (R3-2).
[ chemical formula 10]
Figure BDA0002689536670000301
In the formula, m31And m32Each independently is an integer of 0 to 2, preferably 0 or 1. m is33And m34Each independently is an integer of 0 to 2, preferably 0 or 1. R21、R22And R23Each independently is an alkyl group having 1 to 4 carbon atoms, an alkenyl group having 2 to 4 carbon atoms, or an alkynyl group having 2 to 4 carbon atoms. p is a radical of21、p22And p23Is an integer of 0 to 4, preferably 0. L is21Is a single bond, an ether group, a carbonyl group or an alkylene group having 1 to 4 carbon atoms.
Due to R3Is a divalent group having 6 to 22 carbon atoms comprising at least one aromatic ring, and m in the formula (R3-1)31、m32、R21And p21The number of carbon atoms of the divalent group represented by the formula (R3-1) is selected to fall within the range of 6 to 22.
Also, as L in the formula (R3-2)21、m33、m34、R22、R23、p22And p23The number of carbon atoms of the divalent group represented by the formula (R3-2) is selected to fall within the range of 12 to 22.
X in the above formula (3)3And X in the above formula (1)1The same definitions apply to the preferred embodiments.
The content ratio of the repeating structural unit of the formula (3) to the total repeating structural units constituting the polyimide is preferably more than 0 mol% and 25 mol% or less.
The content ratio is preferably 5 to 20 mol%, and more preferably 7 to 15 mol%, from the viewpoint of improving heat resistance and maintaining ease of crystallization.
The polyimide may further contain a repeating structural unit represented by the following formula (4).
[ chemical formula 11]
Figure BDA0002689536670000311
In the formula, R4Is composed of-SO2-or-Si (R)x)(Ry) Divalent radical of O-, RxAnd RyEach independently represents a C1-3 chain aliphatic group or a phenyl group, X4Is a tetravalent group having 6 to 22 carbon atoms comprising at least one aromatic ring.
X in the above formula (4)4And X in the above formula (1)1The same definitions apply to the preferred embodiments.
The polyimide further has a chain aliphatic group having 5 to 14 carbon atoms at the terminal.
The chain aliphatic group may be saturated or unsaturated, and may be linear or branched. Since the polyimide has the above-mentioned specific group at the end, it is excellent in heat aging resistance. Specifically, even when the film containing the polyimide is stored for several days in a high-temperature environment of 200 ℃ or higher, the decrease in the molecular weight retention is small, and the mechanical strength (malleability) of the film can be maintained.
Examples of the saturated chain aliphatic group having 5 to 14 carbon atoms include n-pentyl group, n-hexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decyl group, n-undecyl group, lauryl group, n-tridecyl group, n-tetradecyl group, isopentyl group, neopentyl group, 2-methylpentyl group, 2-methylhexyl group, 2-ethylpentyl group, 3-ethylpentyl group, isooctyl group, 2-ethylhexyl group, 3-ethylhexyl group, isononyl group, 2-ethyloctyl group, isodecyl group, isododecyl group, isotridecyl group, and isotetradecyl group.
Examples of the unsaturated chain aliphatic group having 5 to 14 carbon atoms include 1-pentenyl, 2-pentenyl, 1-hexenyl, 2-hexenyl, 1-heptenyl, 2-heptenyl, 1-octenyl, 2-octenyl, nonenyl, decenyl, dodecenyl, tridecenyl and tetradecenyl.
The chain aliphatic group is preferably a saturated chain aliphatic group, and more preferably a saturated straight chain aliphatic group. In addition, from the viewpoint of obtaining excellent moldability, heat resistance and thermal aging resistance of the polyimide, the number of carbon atoms of the chain aliphatic group is preferably 6 to 12, more preferably 7 to 10, and still more preferably 8 to 9. The number of the chain aliphatic groups may be only one, or two or more.
The chain aliphatic group is particularly preferably at least one selected from the group consisting of n-octyl, isooctyl, 2-ethylhexyl, n-nonyl, isononyl, n-decyl and isodecyl groups, more preferably at least one selected from the group consisting of n-octylamine, isooctylamine, 2-ethylhexylamine, n-nonylamine and isononylamine, and most preferably at least one selected from the group consisting of n-octyl, isooctyl and 2-ethylhexyl groups.
From the viewpoint of heat aging resistance, the polyimide preferably has only a chain aliphatic group having 5 to 14 carbon atoms at the terminal, in addition to the terminal amino group and the terminal carboxyl group. When the terminal contains a group other than those described above, the content thereof is preferably 10 mol% or less, more preferably 5 mol% or less, relative to the chain aliphatic group having 5 to 14 carbon atoms.
The content of the chain aliphatic group having 5 to 14 carbon atoms in the polyimide is preferably 0.01 to 10 mol%, more preferably 0.1 to 6 mol%, and still more preferably 0.2 to 3.5 mol% with respect to 100 mol% of the total of all the repeating structural units in the polyimide, from the viewpoint of exhibiting excellent thermal aging resistance and from the viewpoint of ensuring a molecular weight for obtaining good mechanical properties.
The content of the chain aliphatic group having 5 to 14 carbon atoms in the polyimide can be obtained by depolymerizing the polyimide.
The polyimide preferably has a melting point of 360 ℃ or lower and a glass transition temperature of 150 ℃ or higher.
The melting point of the polyimide is more preferably 280 to 345 ℃, and still more preferably 290 to 340 ℃ from the viewpoint of heat resistance and moldability.
The glass transition temperature of the polyimide is preferably 160 to 250 ℃, more preferably 170 to 230 ℃, and still more preferably 170 to 200 ℃ from the viewpoint of heat resistance and moldability.
The melting point and the glass transition temperature of the polyimide can be measured by a differential scanning calorimeter.
From the viewpoint of improving crystallinity, heat resistance, mechanical strength, and chemical resistance, the heat quantity of the crystallization exothermic peak observed when the polyimide is melted and cooled at a cooling rate of 20 ℃/min (hereinafter simply referred to as "crystallization exothermic quantity") is preferably 5.0mJ/mg or more, more preferably 10.0mJ/mg or more, and still more preferably 17.0mJ/mg or more, as measured by a differential scanning calorimeter. The upper limit of the calorific value of crystallization is not particularly limited, but is usually 45.0mJ/mg or less.
The melting point, glass transition temperature, and crystallization heat generation amount of the polyimide can be measured specifically by the method described in japanese patent No. 6037088.
The polyimide preferably has a logarithmic viscosity at 30 ℃ of 0.2 to 2.0dL/g, more preferably 0.3 to 1.8dL/g, in a 5 mass% concentrated sulfuric acid solution. If the logarithmic viscosity is 0.2dL/g or more, a sufficient mechanical strength as a molded article can be obtained, and if it is 2.0dL/g or less, the moldability and the handleability are good. The logarithmic viscosity μ was determined by measuring the flow time of concentrated sulfuric acid and the flow time of the polyimide solution at 30 ℃ using a Cannon Finske Viscometer (Cannon Finske Viscometer) and calculating the logarithmic viscosity μ according to the following equation.
μ=ln(ts/t0)/C
t0: flow time of concentrated sulfuric acid
ts: flow time of polyimide solution
C:0.5(g/dL)
The weight average molecular weight (Mw) of the polyimide is preferably 10000 to 100000, more preferably 12000 to 80000, and further preferably 13000 to 60000. When Mw is 10000 or more, mechanical strength is good, and when Mw is 100000 or less, moldability is good.
The polyimide preferably has a number average molecular weight (Mn) of 3000 to 80000, more preferably 4000 to 50000, and even more preferably 5000 to 30000.
The molecular weight (Mw, Mn) of the above polyimide can be measured by a gel filtration chromatography (GPC) method.
The polyimide is molded into a film having a thickness of 100 μm, and the retention of Mw after heating at 200 ℃ for 72 hours is preferably 95% or more, more preferably 98% or more, and the retention of Mn is preferably 83% or more, more preferably 85% or more. If the retention rates of Mw and Mn are within this range, the thermal aging resistance is good, and the adhesion to the metal-containing conductive layer 22 is excellent.
The retention of the Mw may exceed 100%, and the upper limit is usually 120%. It is considered that when the retention of Mw exceeds 100%, intramolecular crosslinking occurs. The retention of Mn is usually 100%.
The retention of Mw and Mn can be calculated by the following numerical expression.
{ molecular weight after heating at 200 ℃ for 72 hours/molecular weight before heating }. times.100 (%)
The method for producing the polyimide is disclosed in, for example, japanese patent No. 6037088.
Examples of commercially available products of the polyimide include Therplim (registered trademark) manufactured by mitsubishi gas chemical corporation.
[ method for manufacturing Flexible printed Wiring Board with electromagnetic wave Shielding ]
The method for manufacturing the flexible printed wiring board 2 with electromagnetic wave shielding includes the steps of: the coverlay adhesive layer 42 of the coverlay 1 with electromagnetic wave shielding is brought into contact with at least one surface of the flexible printed wiring board 50, the coverlay adhesive layer 42 is heated at 100 to 300 ℃, and the coverlay 1 with electromagnetic wave shielding is bonded to the one surface via the coverlay adhesive layer 42.
The flexible printed wiring board 2 with an electromagnetic wave shield shown in fig. 3 can be manufactured by a method having the following steps (α) to (δ), for example.
Step (a): the coverlay adhesive layer 42 of the cover film 1 with electromagnetic wave shielding is brought into contact with the surface of the flexible printed wiring board 50 on the side where the wiring 54 is provided. Step (β): after the step (α), the flexible printed wiring board 50 and the cover film 1 with electromagnetic wave shield are pressure-bonded to each other. At this time, the cover adhesive layer 42 is heated and pressure-bonded in a softened state. The heating and crimping are carried out using a known hot press. Step (γ): after the step (β), the protective film 60 is peeled off when the protective film 60 is not needed.
Step (δ): if necessary, a partial region of the insulating resin layer 10 is removed, and the shield layer 20 exposed in the region is wired and electrically connected to an external ground or the like.
The heating and pressure bonding (hot pressing) time is preferably 20 seconds to 60 minutes, more preferably 30 seconds to 30 minutes.
If the heating and crimping time is within this range, the coverlay adhesive layer 42 and the flexible printed wiring board 50 can be easily bonded. In addition, the manufacturing time of the flexible printed wiring board 2 with electromagnetic wave shielding can be shortened.
The hot pressing temperature (temperature of a hot plate of a press) is preferably 160 to 280 ℃, more preferably 180 to 260 ℃, and further preferably 180 to 220 ℃.
If the heat pressing temperature is within this range, the coverlay adhesive layer 42 and the flexible printed wiring board 50 can be easily bonded. In addition, deterioration of the cover film 1 with electromagnetic wave shielding, the flexible printed wiring board 50, and the like can be sufficiently suppressed.
The hot pressing pressure is preferably 0.5 to 20MPa, more preferably 1 to 16MPa, still more preferably 2 to 10MPa, and particularly preferably 3 to 7 MPa.
If the thermocompression pressure is within this range, the coverlay adhesive layer 42 and the flexible printed wiring board 50 can be easily bonded. In addition, the cover film 1 having the electromagnetic wave shield and the flexible printed wiring board 50 can be sufficiently prevented from being damaged.
[ examples ]
[ raw materials ]
As the insulating resin layer-forming coating material, a coating material was prepared by dissolving 100 parts by mass of bisphenol a type epoxy resin (jER (registered trademark) 828, manufactured by mitsubishi chemical corporation), 20 parts by mass of a curing agent (Sho-amine X (registered trademark), manufactured by showa electrical corporation), 2 parts by mass of 2-ethyl-4-methylimidazole, and 2 parts by mass of carbon black in 200 parts by mass of a solvent (methyl ethyl ketone).
An adhesive film having an acrylic adhesive with a thickness of 15 μm on one surface of a PET film with a thickness of 50 μm was prepared as a carrier film.
As the cover film, a polyetheretherketone film (relative dielectric constant 2.8, dielectric loss tangent 0.003, thermal expansion coefficient 5X 10) having a thickness of 12.5 μm was prepared-5K-1)。
As the coating material adhesive, a coating material was prepared in which 100 parts by mass of bismaleimide resin and 20 parts by mass of a curing agent (diisopropyl peroxydicarbonate) were dissolved or dispersed in 200 parts by mass of a solvent (toluene). (the relative dielectric constant of the film obtained by drying and curing the coating adhesive paint was 2.4, and the dielectric loss tangent was 0.002.)
A printed wiring board was produced as follows.
A copper clad laminate having a copper foil with a thickness of 12.5 μm on the surface of a liquid crystal polymer film (substrate) with a thickness of 25 μm was prepared.
And etching the copper foil of the copper-clad plate to form a circuit, thereby obtaining a circuit substrate main body with the circuit formed on the substrate.
[ example 1]
Copper was physically deposited on the surface of the cover film by electron beam deposition to form a barrier layer (deposited film, thickness: 2 μm).
Subsequently, the insulating resin layer-forming coating material was applied to the surface of the shield layer, and the surface was heated at 120 ℃ for 5 minutes to dry and cure the coating material, thereby forming an insulating resin layer (thickness: 5 μm).
The carrier film is bonded to the insulating resin layer with an adhesive interposed therebetween.
The surface of the coverlay film opposite to the insulating resin layer was coated with a coverlay adhesive coating, and the solvent was evaporated to form a B-stage coverlay adhesive layer (thickness of adhesive: 3 μm, copper particle ratio: 5 mass%) to obtain a coverlay film with an electromagnetic wave shield.
A cover film having an electromagnetic wave shield is temporarily adhered to a printed wiring board while being overlapped. The flexible printed wiring board to which the electromagnetic wave shielding film was temporarily bonded was subjected to main pressure bonding at 180 ℃ for 150 seconds under 3MPa by a press, and the resultant was subjected to pressure bonding using a high-temperature groove (manufactured by nakeh chemical corporation, HT210) at a temperature of: the coverlay adhesive layer was cured mainly by heating at 180 ℃ for 6 hours, thereby obtaining a flexible printed wiring board provided with a coverlay film having an electromagnetic wave shield.
Description of the symbols
1. 1 ', 1' covering film with electromagnetic wave shield
2 flexible printed circuit board with electromagnetic wave shield
10 insulating resin layer
20 Shielding layer
22 conductive layer
24 barrier layer adhesive layer
40 covering film
41 cover the membrane body
42 cover layer adhesive layer
50 flexible printed wiring board
52 base material
54 wiring
60 protective film
61 protective film body
62 protective film adhesive layer
70 barrier film
71 main body of isolating film
72 Release film adhesive layer

Claims (15)

1. A cover film with electromagnetic wave shielding, comprising an insulating resin layer, a shielding layer comprising a conductive layer, and a cover film provided on the side of the shielding layer opposite to the insulating resin layer,
the cover film includes a cover film main body and a cover adhesive layer provided on a surface of the cover film main body opposite to the shield layer.
2. The cover film with electromagnetic wave shield according to claim 1,
the cover film comprises an aromatic polyether ketone.
3. The cover film with electromagnetic wave shield according to claim 2,
the aromatic polyether ketone is polyether ether ketone or polyether ketone.
4. The cover film with electromagnetic wave shield according to any one of claims 1 to 3,
the relative dielectric constant of the cover adhesive layer is less than 3.5, and the dielectric loss tangent is 0.010 or less.
5. The cover film with electromagnetic wave shield according to any one of claims 1 to 4,
the shield layer further includes a shield adhesive layer provided on the surface of the conductive layer on the cover film side.
6. The cover film with electromagnetic wave shield according to claim 5,
the shielding layer adhesive layer has a relative dielectric constant of less than 3.5 and a dielectric loss tangent of 0.010 or less.
7. The cover film with electromagnetic wave shield according to any one of claims 1 to 6,
the thickness of the conductive layer is 0.2-3 μm.
8. The cover film with electromagnetic wave shield according to any one of claims 1 to 7,
the covering film body has a thermal expansion coefficient of 2 x 10-5~30×10-5K-1
9. The cover film with electromagnetic wave shield according to any one of claims 1 to 8,
the cover film with an electromagnetic wave shield further includes a protective film provided on a surface of the insulating resin layer opposite to the shield layer.
10. The cover film with electromagnetic wave shielding according to claim 9,
the protective film has a protective film main body and a protective film adhesive layer provided on the surface of the protective film main body on the insulating resin layer side.
11. The cover film with electromagnetic wave shield according to any one of claims 1 to 10,
the cover film with an electromagnetic wave shield further includes a separator provided on a surface of the cover adhesive layer opposite to the cover main body.
12. The cover film with electromagnetic wave shielding according to claim 11,
the release film has a release film main body and a release film adhesive layer provided on the surface of the release film on the cover layer adhesive layer side.
13. The method for producing the cover film with electromagnetic wave shield according to any one of claims 1 to 12, comprising:
a step of providing a shielding layer including a conductive layer on one surface of a cover film body including aromatic polyether ketone;
a step of providing an insulating resin layer on a surface of the shield layer opposite to the cover film body;
and a step of providing a cover adhesive layer on the surface of the cover main body opposite to the shield layer.
14. A flexible printed wiring board with electromagnetic wave shielding, comprising: a flexible printed wiring board and the cover film with electromagnetic wave shielding according to any one of claims 1 to 8,
the flexible printed wiring board comprises a base material and wiring formed on at least one surface of the base material, wherein the cover film with electromagnetic wave shielding according to any one of claims 1 to 8 is bonded to the one surface,
the cover layer adhesive layer of the cover film with an electromagnetic wave shield is adhered to the surface of the one side of the flexible printed wiring board.
15. A method for manufacturing a flexible printed wiring board with electromagnetic wave shielding, comprising the steps of:
the cover film with electromagnetic wave shield according to any one of claims 1 to 8, wherein the cover film with electromagnetic wave shield is bonded to the surface of at least one side of a flexible printed wiring board via a cover adhesive layer, and the flexible printed wiring board comprises a base material and wiring formed on the surface of at least one side of the base material.
CN202010986819.5A 2019-09-24 2020-09-18 Cover film with electromagnetic wave shield and method for manufacturing the same, and flexible printed wiring board with electromagnetic wave shield and method for manufacturing the same Pending CN112638142A (en)

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JP2019173301A JP2021052063A (en) 2019-09-24 2019-09-24 Coverlay film with electromagnetic wave shield and method for manufacturing the same, and flexible printed wiring board with electromagnetic wave shield and method for manufacturing the same

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