CN112614813A - Ultrahigh frequency surface-mounted ceramic vertical interconnection structure and packaging structure - Google Patents

Ultrahigh frequency surface-mounted ceramic vertical interconnection structure and packaging structure Download PDF

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Publication number
CN112614813A
CN112614813A CN202011496809.XA CN202011496809A CN112614813A CN 112614813 A CN112614813 A CN 112614813A CN 202011496809 A CN202011496809 A CN 202011496809A CN 112614813 A CN112614813 A CN 112614813A
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pad
vertical
bonding pad
ceramic
pin
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朱春雨
李萌
白银超
赵瑞华
王磊
赵正桥
王晟
苏晓晨
韩猛
刘星
高占岭
杨添延
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CETC 13 Research Institute
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout

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Abstract

The invention provides an ultrahigh frequency surface-mounted ceramic vertical interconnection structure and a packaging structure, belonging to the technical field of chip packaging microwave signal interconnection, wherein the ultrahigh frequency surface-mounted ceramic vertical interconnection structure comprises a ceramic medium, a front pin bonding pad, a back pin bonding pad and a similar coaxial structure, the front pin bonding pad is arranged on the front side of the ceramic medium, and a GND region is arranged around the front pin bonding pad; the packaging structure comprises an ultrahigh frequency surface-mounted ceramic vertical interconnection structure. The invention has the advantages that the radio frequency vertical transmission performance can be improved, the transmission of DC-40GHz broadband high-frequency signals can be realized between ceramics, the structure of the invention is a vertical interconnection structure, the vertical transmission of radio frequency signals can be realized within 40GHz, and the return loss S11 and S22 are better than-10 dB.

Description

Ultrahigh frequency surface-mounted ceramic vertical interconnection structure and packaging structure
Technical Field
The invention belongs to the technical field of chip packaging microwave signal interconnection, and particularly relates to an ultrahigh frequency surface-mounted ceramic vertical interconnection structure and a packaging structure.
Background
With the demand for miniaturization and integration of electronic devices becoming higher and higher, it is required to adopt a high-performance and high-reliability radio frequency vertical interconnection structure. For the realization of a chip-scale packaging vertical interconnection structure, the ceramic materials applied in the current hybrid integrated circuit mainly comprise an aluminum nitride HTCC (high temperature co-fired ceramic), an aluminum oxide HTCC (high temperature co-fired ceramic) and an LTCC (low temperature co-fired ceramic) substrate. The HTCC substrate is not suitable for high frequency signal applications because the sintering temperature is high, the conductor material for internal wiring and via hole filling is made of metal materials such as tungsten, molybdenum, manganese and the like with high melting points, and the sheet resistance of these materials is large, which causes the defects of large signal transmission loss, signal delay and the like at high frequency.
Disclosure of Invention
The invention aims to provide an ultrahigh frequency surface-mounted ceramic vertical interconnection structure, and aims to solve the technical problems of large square resistance of an internal conductor of an HTCC substrate, large signal transmission loss and signal delay caused under high frequency.
In order to achieve the purpose, the invention adopts the technical scheme that: the ultrahigh frequency surface-mounted ceramic vertical interconnection structure comprises a ceramic medium, a front pin bonding pad, a back pin bonding pad and a similar coaxial structure, wherein the front pin bonding pad is arranged on the front surface of the ceramic medium, and a GND (ground) region is arranged around the front pin bonding pad; the back pin bonding pad is arranged on the back of the ceramic medium and is parallel to the front pin bonding pad, and a GND (ground potential) area is arranged around the back pin bonding pad; the quasi-coaxial structure is arranged between the front pin pad and the back pin pad and comprises radio frequency signal vertical transition holes and grounding vertical transition holes which are arranged in parallel, the front pin pad and the back pin pad are communicated through the radio frequency signal vertical transition holes, and the grounding vertical transition holes are uniformly distributed around the circumference of the radio frequency signal vertical transition holes; the axial direction of the radio frequency signal vertical transition hole is perpendicular to the front pin bonding pad plane.
In another embodiment of the present application, the front side lead pad is an arc-shaped member with a narrow top and a wide bottom, and the arc-shaped member is in a convex shape.
As another embodiment of the present application, the front side lead pad includes a front side pad, a bonding pad and a transition section, and the front side pad is disposed on the front side of the radio frequency signal vertical transition hole and is communicated with the radio frequency signal vertical transition hole; the bonding pad is used for bonding with the chip; the transition section is arranged and connected between the front bonding pad and the bonding pad, and the front bonding pad, the bonding pad and the transition section form a convex structure.
As another embodiment of the present application, the front pad is a circular member, and the bonding pad and the transition section are rectangular members.
As another embodiment of the present application, the rf signal vertical transition hole is an inner conductor, the plurality of ground vertical transition holes are outer conductors, and the rf signal vertical transition hole and the plurality of ground vertical transition holes together form a coaxial-like structure using the ceramic dielectric as a substrate.
As another embodiment of the present application, the back pin pad includes a back pad and a bonding segment, the back pad is disposed on the back of the radio frequency signal vertical transition hole and is communicated with the radio frequency signal vertical transition hole; the welding section is connected with the back surface welding disc and is used for being connected with the PCB in a welding matching mode.
As another embodiment of the present application, the front pad and the back pad are communicated through the rf signal vertical transition hole to realize signal transmission.
As another embodiment of the present application, the back pad is a circular member, and the bonding segment is a rectangular member.
As another embodiment of the present application, the thickness of the ceramic dielectric is 0.5mm, the plating layers of the front side pin pad and the back side pin pad are all nickel-palladium-gold, and the thickness of the nickel-palladium-gold is 0.065 mm.
The ultrahigh frequency surface-mounted ceramic vertical interconnection structure provided by the invention has the beneficial effects that: compared with the prior art, the ultrahigh frequency surface-mounted ceramic vertical interconnection structure has the advantages that the front pin bonding pad and the back pin bonding pad are arranged on the ceramic medium, the connection is realized by arranging the radio-frequency signal vertical transition holes, the signal transmission is realized, the plurality of grounding vertical transition holes are uniformly distributed around the circumference direction of the radio-frequency signal vertical transition holes, and the axial direction of the radio-frequency signal vertical transition holes is vertical to the plane of the front pin bonding pad; the ultra-high frequency surface-mounted ceramic vertical interconnection structure has the advantages that the radio frequency vertical transmission performance can be improved, the transmission of DC-40GHz broadband high-frequency signals can be realized between ceramics, the structure is a vertical interconnection structure, the good vertical transmission of radio frequency signals can be realized within 40GHz, the return loss S11 and S22 are superior to-10 dB, the ultra-high frequency surface-mounted ceramic vertical interconnection structure is simple in design, is suitable for reflow soldering process, and is simple and convenient to operate.
The invention also provides a packaging structure which comprises the ultrahigh frequency surface-mounted ceramic vertical interconnection structure.
The packaging structure provided by the invention has the beneficial effects that: compared with the prior art, the packaging structure comprises the ultrahigh frequency surface-mounted ceramic vertical interconnection structure, the radio frequency vertical transmission performance can be improved, the transmission of DC-40GHz broadband high-frequency signals can be realized between ceramics, the structure is the vertical interconnection structure, the good vertical transmission of the radio frequency signals can be realized within 40GHz, the return loss S11 and S22 are superior to-10 dB, the ultrahigh frequency surface-mounted ceramic vertical interconnection structure is simple in design, suitable for a reflow soldering process and simple and convenient to operate.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic front structural view of an ultrahigh frequency surface-mounted ceramic vertical interconnection structure according to an embodiment of the present invention;
fig. 2 is a schematic structural view of a back surface of an ultrahigh frequency surface-mounted ceramic vertical interconnection structure according to an embodiment of the present invention;
fig. 3 is a schematic cross-sectional structural view of an ultrahigh frequency surface-mounted ceramic vertical interconnection structure according to an embodiment of the present invention;
fig. 4 is a schematic perspective structural view of an ultrahigh frequency surface-mounted ceramic vertical interconnection structure according to an embodiment of the present invention;
fig. 5 is a front isometric view of an ultrahigh frequency surface-mount ceramic vertical interconnect structure provided in an embodiment of the present invention;
fig. 6 is a backside isometric view of an uhf surface-mount ceramic vertical interconnect structure provided in accordance with an embodiment of the present invention;
fig. 7 is a front perspective view of a uhf surface-mounted ceramic vertical interconnect structure provided in accordance with an embodiment of the present invention.
In the figure: 1. a ceramic dielectric; 2. a front side pin pad; 21. a front side pad; 22. a bonding pad; 23. a transition section; 3. a back side pin bonding pad; 31. a back side pad; 32. welding a section; 4. a radio frequency signal vertical transition hole; 5. and the vertical transition hole is grounded.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1 to 7, the uhf surface-mounted ceramic vertical interconnection structure provided in the present invention will now be described. The ultrahigh frequency surface-mounted ceramic vertical interconnection structure comprises a ceramic medium 1, a front pin bonding pad 2, a back pin bonding pad 3 and a similar coaxial structure, wherein the front pin bonding pad 2 is arranged on the front surface of the ceramic medium 1, and a GND (ground potential) area is arranged around the front pin bonding pad 2; the back pin bonding pad 3 is arranged on the back of the ceramic medium 1 and is parallel to the front pin bonding pad 2, and a GND area is arranged around the back pin bonding pad 3; the quasi-coaxial structure is arranged between the front pin pad 2 and the back pin pad 3 and comprises radio frequency signal vertical transition holes 4 and grounding vertical transition holes 5 which are arranged in parallel, the front pin pad 2 and the back pin pad 3 are communicated through the radio frequency signal vertical transition holes 4, and the grounding vertical transition holes 5 are uniformly distributed around the circumference of the radio frequency signal vertical transition holes 4; the axial direction of the radio frequency signal vertical transition hole 4 is perpendicular to the plane of the front pin bonding pad 2.
Compared with the prior art, the ultrahigh frequency surface-mounted ceramic vertical interconnection structure provided by the invention has the advantages that the front pin pad 2 and the back pin pad 3 are arranged on the ceramic medium 1, the connection is realized by arranging the radio-frequency signal vertical transition holes 4, the signal transmission is realized, the plurality of grounding vertical transition holes 5 are uniformly distributed around the circumferential direction of the radio-frequency signal vertical transition holes 4, and the axial direction of the radio-frequency signal vertical transition holes 4 is vertical to the plane of the front pin pad 2; the ultra-high frequency surface-mounted ceramic vertical interconnection structure has the advantages that the radio frequency vertical transmission performance can be improved, the transmission of DC-40GHz broadband high-frequency signals can be realized between ceramics, the structure is a vertical interconnection structure, the good vertical transmission of radio frequency signals can be realized within 40GHz, the return loss S11 and S22 are superior to-10 dB, the ultra-high frequency surface-mounted ceramic vertical interconnection structure is simple in design, is suitable for reflow soldering process, and is simple and convenient to operate.
Specifically, the aperture of the radio frequency signal vertical transition hole 4 is 0.09mm, the aperture of the grounding vertical transition hole 5 is 0.09mm, and the pitch between the radio frequency signal vertical transition hole 4 and the grounding vertical transition hole 5 is 0.75 mm. The GND area refers to GND (ground) on the circuit diagram and the circuit board to represent a ground line or a 0 line, and GND means a common terminal, and can also be a ground, but the ground is not a true ground, and is a ground assumed for application.
The ultrahigh frequency in the ultrahigh frequency surface-mounted ceramic vertical interconnection structure of the invention refers to equipment with high working frequency, namely 840-960MHz equipment, such as an ultrahigh frequency electronic tag, an ultrahigh frequency reader-writer, an ultrahigh frequency antenna and the like. In addition, many devices such as ultrahigh frequency induction heating devices are required to be used at the ultrahigh frequency, and the operating frequency is between 100 and 1100 MHz.
The design principle is as follows:
1. material selection
The ceramic medium 1 can be alumina ceramic or aluminum nitride ceramic. The thickness of the electroplated copper on the front pin bonding pad 2 of the ceramic medium 1 is 65 +/-15 um, and the thickness of the electroplated copper on the back pin bonding pad 3 is 65 +/-15 um. The front surface and the back surface are free of solder resistance, nickel, palladium and gold are arranged on the surface, the thickness of nickel is larger than or equal to 3um, the thickness of palladium is larger than or equal to 0.05um, and the thickness of gold is larger than or equal to 0.05 um.
2. Design of transmission structure
In general use, possible signal transmission paths are: ceramic dielectric 1 front side pin pad 2 → quasi-coaxial structure → ceramic dielectric 1 back side pin pad 3. According to the transmission path, the characteristic impedance is kept constant, and the quasi-coaxial structure takes a vertical transition hole of a radio frequency signal as an inner conductor, takes a peripheral grounding vertical transition hole 5 as an outer conductor and takes the ceramic medium 1 as a base material. The characteristic impedance is:
Figure BDA0002842400610000061
wherein epsilonrThe dielectric relative dielectric constant of the coaxial-like structure is D, which corresponds to the inner diameter of the outer conductor of the coaxial-like structure, and D corresponds to the diameter of the via hole of the coaxial-like structure.
3. Impedance matching
In order to realize stable transmission of signals in a wide frequency range, impedance matching requirements are required to be met on transmission paths, particularly at the junction of a horizontal transmission line and a vertical transmission line. In order to relieve impedance mismatch caused by structure mutation, the lengths and the widths of the front pin bonding pad 2 of the ceramic medium 1 and the back pin bonding pad 3 of the ceramic medium 1 are optimized through simulation, and the impedance difference between the horizontal pin bonding pad and the vertical transition hole is reduced.
4. Design of assembly method
The vertical interconnection structure is simple and convenient in assembly process, and the front-surface pin bonding pad 2 of the ceramic medium 1 is bonded and connected with a chip by adopting a gold wire bonding wire. And assembling the pin bonding pad 3 on the back of the ceramic medium 1 and the PCB by adopting a standard SMT process.
Referring to fig. 1 to 7, as an embodiment of the ultrahigh frequency surface-mounted ceramic vertical interconnection structure provided by the present invention, a front surface pin pad 2 is an arc-shaped member having a narrow top and a wide bottom, and the arc-shaped member is in a convex shape.
As a specific embodiment of the ultrahigh frequency surface-mounted ceramic vertical interconnection structure provided by the present invention, please refer to fig. 1 to 7, the front surface lead bonding pad 2 includes a front surface bonding pad 21, a bonding pad 22 and a transition section 23, the front surface bonding pad 21 is disposed on the front surface of the radio frequency signal vertical transition hole 4 and is communicated with the radio frequency signal vertical transition hole 4; the bonding pads 22 are used for bonding with a chip; the transition section 23 is disposed and connected between the front pad 21 and the bonding pad 22, and the front pad 21, the bonding pad 22 and the transition section 23 are combined to form a convex structure.
Referring to fig. 1 to 7, as an embodiment of the uhf surface-mounted ceramic vertical interconnection structure provided in the present invention, the front bonding pad 21 is a circular member, and the bonding pad 22 and the transition section 23 are rectangular members.
Specifically, the radius of the front pad 21 is 0.15mm, the length of the bonding pad 22 is 0.5mm, the width of the bonding pad is 0.2mm, and the length of the transition section 23 is 0.3mm, and the width of the transition section is 0.1 mm.
Referring to fig. 1 to 7, as a specific embodiment of the ultrahigh frequency surface-mounted ceramic vertical interconnection structure provided by the present invention, the radio frequency signal vertical transition hole 4 is an inner conductor, the plurality of grounding vertical transition holes 5 are outer conductors, and the radio frequency signal vertical transition hole 4 and the plurality of grounding vertical transition holes 5 form a coaxial structure using the ceramic medium 1 as a base material.
As a specific embodiment of the ultrahigh frequency surface-mounted ceramic vertical interconnection structure provided by the present invention, referring to fig. 1 to 7, the back pin pad 3 includes a back pad 31 and a welding segment 32, the back pad 31 is disposed on the back of the radio frequency signal vertical transition hole 4 and is communicated with the radio frequency signal vertical transition hole 4; the soldering section 32 is connected with the back land 31 and is used for soldering fit connection with the PCB board.
Referring to fig. 1 to 7, as a specific embodiment of the uhf surface-mounted ceramic vertical interconnection structure provided in the present invention, the front bonding pad 21 and the back bonding pad 31 are connected through the rf signal vertical transition hole 4 to achieve signal transmission.
Referring to fig. 1 to 7, as an embodiment of the uhf surface-mounted ceramic vertical interconnection structure provided in the present invention, the back pad 31 is a circular component, and the bonding segment 32 is a rectangular component.
Specifically, the radius of the back pad 31 is 0.15mm, the length of the soldering segment 32 is 0.9mm, and the width is 0.25 mm.
As a specific embodiment of the ultrahigh frequency surface-mounted ceramic vertical interconnection structure provided by the present invention, please refer to fig. 1 to 7, a thickness of the ceramic medium 1 is 0.5mm, plating layers of the front pin pad 2 and the back pin pad 3 are all ni-pd-au, and a thickness of the ni-pd-au is 0.065 mm.
The nickel palladium gold is short for gold plating, palladium plating and nickel plating. The nickel-palladium-gold plating layer is the latest technology currently applied to the electronic circuit industry and the semiconductor industry, and good conductivity, corrosion resistance and friction resistance are achieved by utilizing a gold plating layer with the thickness of 10 nanometers and a palladium plating layer with the thickness of 50 nanometers. The thickness of the nickel-palladium-gold copper layer can directly influence the physical and appearance properties, and the thickness measurement of the nickel-palladium-gold layer is a powerful guarantee for the product quality.
Specifically, the ceramic dielectric 1 is alumina ceramic and has a dielectric constant of 9.8.
The assembly process is as follows: firstly, a chip and a front-surface lead bonding pad 2 of a ceramic medium 1 are bonded and connected by a gold wire bonding wire, and then a ceramic vertical interconnection structure is assembled on a PCB by adopting a standard SMT process.
The invention further provides a packaging structure which comprises the ultrahigh frequency surface-mounted ceramic vertical interconnection structure. The packaging structure comprises the vertical interconnection structure and other packaging structures which are used for surface-mounted ceramics, and the other packaging structures are packaging structures in the prior art.
The packaging structure provided by the invention has the beneficial effects that: compared with the prior art, the packaging structure comprises the ultrahigh frequency surface-mounted ceramic vertical interconnection structure, the radio frequency vertical transmission performance can be improved, the transmission of DC-40GHz broadband high-frequency signals can be realized between ceramics, the structure is the vertical interconnection structure, the good vertical transmission of the radio frequency signals can be realized within 40GHz, the return loss S11 and S22 are superior to-10 dB, the ultrahigh frequency surface-mounted ceramic vertical interconnection structure is simple in design, suitable for a reflow soldering process and simple and convenient to operate.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.

Claims (10)

1. The perpendicular interconnected structure of hyperfrequency table subsides pottery, its characterized in that includes:
a ceramic dielectric;
the front pin bonding pad is arranged on the front surface of the ceramic medium, and a GND (ground potential) area is arranged around the front pin bonding pad;
the back pin bonding pad is arranged on the back of the ceramic medium and is parallel to the front pin bonding pad, and a GND (ground potential) area is arranged around the back pin bonding pad; and
the quasi-coaxial structure is arranged between the front pin pad and the back pin pad and comprises radio frequency signal vertical transition holes and grounding vertical transition holes which are arranged in parallel, the front pin pad and the back pin pad are communicated through the radio frequency signal vertical transition holes, and the grounding vertical transition holes are uniformly distributed around the circumference of the radio frequency signal vertical transition holes; the axial direction of the radio frequency signal vertical transition hole is perpendicular to the front pin bonding pad plane.
2. The uhf surface-mount ceramic vertical interconnect structure of claim 1, wherein the front side lead pad is an arc-shaped member having a narrow top and a wide bottom, and wherein the arc-shaped member is in a convex shape.
3. The uhf surface-mount ceramic vertical interconnect structure of claim 1, wherein the front side pin pad comprises:
the front bonding pad is arranged on the front side of the radio frequency signal vertical transition hole and is communicated with the radio frequency signal vertical transition hole;
a bonding pad for bonding with a chip; and
the transition section is arranged and connected between the front surface bonding pad and the bonding pad, and the front surface bonding pad, the bonding pad and the transition section form a convex structure.
4. The uhf surface-mount ceramic vertical interconnect structure of claim 3, wherein the front bond pad is a circular member and the bond pad and the transition section are rectangular members.
5. The uhf surface-mount ceramic vertical interconnect structure of claim 1, wherein the rf signal vertical transition hole is an inner conductor and the plurality of ground vertical transition holes are outer conductors, and the rf signal vertical transition hole and the plurality of ground vertical transition holes together form a quasi-coaxial structure with the ceramic dielectric as a substrate.
6. The UHF SMT vertical interconnect structure of claim 3, wherein the back pin pad comprises:
the back bonding pad is arranged on the back of the radio frequency signal vertical transition hole and is communicated with the radio frequency signal vertical transition hole; and
and the welding section is connected with the back surface welding disc and is used for being connected with the PCB in a welding matching way.
7. The UHF SMT ceramic vertical interconnect structure of claim 6, wherein the front pad and the back pad are in communication and signal transfer via the RF signal vertical transition hole.
8. The uhf surface-mount ceramic vertical interconnect structure of claim 6, wherein the back pad is a circular member and the solder segment is a rectangular member.
9. The ultrahigh frequency surface-mount ceramic vertical interconnection structure of claim 1, wherein the thickness of the ceramic dielectric is 0.5mm, and the plating layers of the front side pin pad and the back side pin pad are both ni-pd-au, and the thickness of ni-pd-au is 0.065 mm.
10. Package structure comprising the uhf surface-mount ceramic vertical interconnect structure of any of claims 1-9.
CN202011496809.XA 2020-12-17 2020-12-17 Ultrahigh frequency surface-mounted ceramic vertical interconnection structure and packaging structure Pending CN112614813A (en)

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Publication number Priority date Publication date Assignee Title
CN116937213A (en) * 2023-09-12 2023-10-24 成都华兴大地科技有限公司 TR module structure based on HTCC vertical transition
CN116937213B (en) * 2023-09-12 2023-12-08 成都华兴大地科技有限公司 TR module structure based on HTCC vertical transition

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Application publication date: 20210406