CN112018067B - BGA ceramic vertical interconnection structure based on broadband transmission and tube shell - Google Patents
BGA ceramic vertical interconnection structure based on broadband transmission and tube shell Download PDFInfo
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- CN112018067B CN112018067B CN202010734475.9A CN202010734475A CN112018067B CN 112018067 B CN112018067 B CN 112018067B CN 202010734475 A CN202010734475 A CN 202010734475A CN 112018067 B CN112018067 B CN 112018067B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6616—Vertical connections, e.g. vias
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6616—Vertical connections, e.g. vias
- H01L2223/6622—Coaxial feed-throughs in active or passive substrates
Abstract
The invention provides a BGA ceramic vertical interconnection structure and a tube shell based on broadband transmission, belonging to the technical field of electronic packaging, and comprising a ceramic medium, an upper metal plate, a lower metal plate, a plurality of grounding welding balls and radio frequency signal functional welding balls, wherein the ceramic medium is provided with radio frequency signal vertical transition holes and two rows of symmetrically arranged grounding vertical transition holes; a radio frequency signal front bonding pad connected with the radio frequency signal vertical transition hole is arranged in the upper metal plate; the lower metal plate is arranged on the back of the ceramic medium, and a radio-frequency signal back bonding pad connected with the radio-frequency signal vertical transition hole is arranged in the lower metal plate; the plurality of grounding welding balls are connected to one side of the lower metal plate, which is far away from the back surface of the ceramic medium, and the row of grounding vertical transition holes are provided with grounding welding balls; the radio frequency signal function solder ball is connected with the radio frequency signal back bonding pad. The BGA ceramic vertical interconnection structure based on broadband transmission provided by the invention forms a similar coaxial structure, can improve the performance of broadband high-frequency transmission, and meets the requirements of a broadband T/R component.
Description
Technical Field
The invention belongs to the technical field of electronic packaging, and particularly relates to a BGA ceramic vertical interconnection structure based on broadband transmission and a tube shell.
Background
With the demand for miniaturization and integration of electronic devices becoming higher and higher, it is required to adopt a high-performance and high-reliability radio frequency vertical interconnection structure. For the realization of chip-scale package vertical interconnection structures, the interconnection forms frequently adopted at present include microwave cables, metal connectors, fuzz buttons and the like, but the interconnection structures have large volume, low interconnection density and poor microwave performance at high frequency.
BGA (Ball Grid Array-Ball Grid Array package) is a structure that Array solder balls are manufactured at the bottom of a substrate of a package body and used as input/output ends of a circuit to be interconnected with a lower adapter plate, and a vertical interconnection structure based on the BGA achieves the problems of low cost and low vertical transmission loss of three-dimensional integration. However, the transmission performance of the currently applied BGA ceramic vertical interconnection structure is not ideal when the structure is broadband (broadband radio frequency signal DC-20 GHz), and cannot meet the requirement of a broadband T/R component (T/R is an abbreviation of Transmitter and Receiver, and refers to a part between a video and an antenna in a wireless transceiving system, that is, a T/R component is connected with an antenna at one end, and an intermediate frequency processing unit is connected at one end to form a wireless transceiving system, and the function of the wireless transceiving system is to amplify, phase shift and attenuate signals).
Disclosure of Invention
The invention aims to provide a BGA ceramic vertical interconnection structure based on broadband transmission, and aims to solve the problem that the existing broadband transmission performance is not ideal.
In order to achieve the purpose, the invention adopts the technical scheme that: provided is a BGA ceramic vertical interconnection structure based on broadband transmission, comprising: the radio frequency signal transmission device comprises a ceramic medium, an upper metal plate, a lower metal plate, a plurality of grounding welding balls and radio frequency signal functional welding balls, wherein the ceramic medium is provided with a radio frequency signal vertical transition hole and two rows of grounding vertical transition holes, and the two rows of grounding vertical transition holes are symmetrically arranged on two sides of the radio frequency signal vertical transition hole; the upper metal plate is arranged on the front surface of the ceramic medium, a front surface solder mask windowing area is arranged at the position, corresponding to the radio frequency signal vertical transition hole, of the upper metal plate, a radio frequency signal front surface bonding pad connected with the radio frequency signal vertical transition hole is arranged in the front surface solder mask windowing area, and the radio frequency signal front surface bonding pad is in solder mask isolation with the upper metal plate; the lower metal plate is arranged on the back surface of the ceramic medium, a back surface welding resisting windowing area is arranged at the position, corresponding to the radio frequency signal vertical transition hole, of the lower metal plate, a radio frequency signal back surface bonding pad connected with the radio frequency signal vertical transition hole is arranged in the back surface welding resisting windowing area, and welding resisting isolation is carried out between the radio frequency signal back surface bonding pad and the lower metal plate; a plurality of grounding welding balls are connected to one side, far away from the back surface of the ceramic medium, of the lower metal plate, and two grounding welding balls are arranged in any row of the grounding vertical transition holes; and the radio frequency signal functional solder ball is connected with the radio frequency signal back bonding pad.
As another embodiment of the present application, the structure of the rf signal front pad is an axisymmetric pattern structure with gradually changing width.
As another embodiment of the present application, the axisymmetric pattern structure is a semicircular structure, and an axisymmetric line of the semicircular structure is perpendicular to a central line of any one row of the vertical ground transition holes.
As another embodiment of the present application, an orthographic projection of the rf signal vertical transition hole on the rf signal front side pad is within a pattern of the rf signal front side pad.
As another embodiment of the present application, the structure of the rf signal back pad is circular.
As another embodiment of the present application, the isolation solder mask region between the rf signal back pad and the lower metal plate is a circular ring structure.
As another embodiment of the present application, an aperture of the rf signal vertical transition hole is smaller than a diameter of the rf signal back pad.
As another embodiment of the present application, a thickness of the rf signal front pad is the same as a thickness of the upper metal plate, and a thickness of the rf signal back pad is the same as a thickness of the lower metal plate.
As another embodiment of the present application, in any one row of the ground vertical transition holes, two of the ground vertical transition holes at two ends are connected to the ground solder ball.
It is another object of the present invention to provide a package including the BGA ceramic vertical interconnect structure.
The BGA ceramic vertical interconnection structure based on broadband transmission has the beneficial effects that: compared with the prior art, the BGA ceramic vertical interconnection structure based on broadband transmission forms a similar coaxial structure by arranging the grounding vertical transition holes symmetrically arranged on the two sides of the radio frequency signal vertical transition hole on the ceramic medium, improves the performance of broadband high-frequency transmission and meets the requirement of a broadband T/R assembly.
The tube shell provided by the invention adopts the vertical interconnection structure, so that the broadband high-frequency transmission performance of the device can be improved, and the transmission reliability of the device can be improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic perspective view of a vertical interconnection structure of BGA ceramic based on broadband transmission according to an embodiment of the present invention;
fig. 2 is a schematic perspective view of a BGA ceramic vertical interconnect structure based on broadband transmission according to an embodiment of the present invention;
fig. 3 is a schematic three-dimensional structure diagram of a vertical BGA ceramic interconnection structure based on broadband transmission according to an embodiment of the present invention.
In the figure: 1. an upper metal plate; 2. a ceramic dielectric; 3. a lower metal plate; 4. a radio frequency signal front side bonding pad; 5. a front surface solder mask windowing area; 6. a grounded vertical transition hole; 7. a ground solder ball; 8. a radio frequency signal vertical transition hole; 9. a radio frequency signal function solder ball; 10. the back side is solder mask windowed.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1 to 3 together, a BGA ceramic vertical interconnection structure based on broadband transmission according to the present invention will now be described. The BGA ceramic vertical interconnection structure based on broadband transmission comprises a ceramic medium 2, an upper metal plate 1, a lower metal plate 3, a plurality of grounding solder balls 7 and radio frequency signal functional solder balls 9, wherein the ceramic medium 2 is provided with a radio frequency signal vertical transition hole 8 and two rows of grounding vertical transition holes 6, and the two rows of grounding vertical transition holes 6 are symmetrically arranged on two sides of the radio frequency signal vertical transition hole 8; the upper metal plate 1 is arranged on the front surface of the ceramic medium 2, a front surface solder mask windowing area 5 is arranged at the position, corresponding to the radio frequency signal vertical transition hole 8, of the upper metal plate 1, a radio frequency signal front surface bonding pad 4 connected with the radio frequency signal vertical transition hole 8 is arranged in the front surface solder mask windowing area 5, and the radio frequency signal front surface bonding pad 4 is in solder mask isolation with the upper metal plate 1; the lower metal plate 3 is arranged on the back surface of the ceramic medium 2, a back surface solder mask windowing area 10 is arranged at the position, corresponding to the radio frequency signal vertical transition hole 8, of the lower metal plate 3, a radio frequency signal back surface bonding pad connected with the radio frequency signal vertical transition hole 8 is arranged in the back surface solder mask windowing area 10, and the radio frequency signal back surface bonding pad is in solder mask isolation with the lower metal plate 3; a plurality of grounding solder balls 7 are connected to one side of the lower metal plate 3 away from the back surface of the ceramic medium 2, and two grounding solder balls 7 are arranged in any row of the grounding vertical transition holes 6; and the radio frequency signal functional solder ball 9 is connected with the radio frequency signal back bonding pad.
Compared with the prior art, the BGA ceramic vertical interconnection structure based on broadband transmission has the advantages that the ceramic medium 2 is provided with the grounding vertical transition holes 6 which are symmetrically arranged on two sides of the radio frequency signal vertical transition hole 8, so that a similar coaxial structure is formed, the broadband high-frequency transmission performance is improved, and the requirements of a broadband T/R assembly are met.
The signal transmission path of the present embodiment is: the RF signal front bonding pad 4 → the RF signal vertical transition hole 8 → the RF signal back bonding pad → the RF signal functional solder ball 9. In order to realize stable transmission of signals in a wide frequency range, impedance matching requirements on transmission paths need to be met, and particularly, signals are located at the junction of a horizontal transmission line and a vertical transmission line. In order to solve the problem of high use frequency caused by impedance mismatch caused by abrupt structure change, the lengths and the widths of the radio-frequency signal front bonding pad 4 and the radio-frequency signal back bonding pad are optimized through simulation, and the impedance difference between the horizontal pin bonding pad and the vertical transition hole is reduced.
According to the conventional design in the field, the radio frequency signal vertical transition hole 8 and the two rows of grounding vertical transition holes 6 are both electroplated copper columns and are used for vertically interconnecting the radio frequency signal front-side bonding pad 4 and the radio frequency signal back-side bonding pad to form an interconnection structure.
Referring to fig. 1 and 3, as a specific embodiment of the BGA ceramic vertical interconnection structure based on broadband transmission according to the present invention, the structure of the front bonding pad 4 for rf signals is an axisymmetric pattern structure with gradually changing width. Through the radio frequency signal front surface bonding pad 4 with the gradually changed width of the appearance structure, impedance transformation is realized, and the stability of the high-frequency transmission performance of the broadband is realized.
As a specific implementation manner of the embodiment of the present invention, please refer to fig. 1 and fig. 3, the axisymmetric pattern structure is a semicircular structure, and an axisymmetric line of the semicircular structure is perpendicular to a central connecting line of any one row of the vertical ground transition holes 6.
In this embodiment, referring to fig. 1, two semicircular structures with different radii may be further included, and the semicircular structure with the smaller radius is coaxial with the semicircular structure with the larger radius.
As a specific implementation manner of the embodiment of the present invention, referring to fig. 1 and fig. 3, the orthographic projection of the rf signal vertical transition hole 8 on the rf signal front pad 4 is within the pattern of the rf signal front pad 4.
As a specific implementation manner of the embodiment of the present invention, please refer to fig. 2 to 3, the structure of the rf signal back pad is circular. The rf signal back pad is coaxial with the rf signal vertical transition hole 8.
As a specific implementation manner of the embodiment of the present invention, referring to fig. 2 to 3, an aperture of the rf signal vertical transition hole 8 is smaller than a diameter of the rf signal back pad.
As a specific implementation manner of the embodiment of the present invention, referring to fig. 1 to 3, the thickness of the rf signal front pad 4 is the same as the thickness of the upper metal plate 1, and the thickness of the rf signal back pad is the same as the thickness of the lower metal plate 3.
As a specific implementation manner of the embodiment of the present invention, referring to fig. 2 to fig. 3, in any one row of the vertical ground transition holes 6, two vertical ground transition holes 6 at two ends are connected to the ground solder ball 7.
The following provides a specific embodiment for designing various parameters of the vertical interconnect structure provided by the present invention, as follows:
(1) Material selection
The ceramic medium 2 can be alumina ceramic or aluminum nitride ceramic, the thickness of the ceramic medium 2 is 0.5mm, the thickness of the electroplated copper on the front bonding pad 4 of the radio frequency signal is 65 +/-15 um, the thickness of the electroplated copper on the back bonding pad of the radio frequency signal is 65 +/-15 um, the surfaces of the front bonding pad 4 of the radio frequency signal and the back bonding pad of the radio frequency signal are both electroplated with nickel-palladium-gold, the thickness of nickel is more than or equal to 3um, the thickness of palladium is more than or equal to 0.05um, and Jin Houdu is more than or equal to 0.05um.
(2) Selection of parameters
When the radio frequency signal front surface bonding pad 4 is in a semicircular structure, the radius is 0.1mm, or the radio frequency signal front surface bonding pad 4 is an arc-shaped component with the chord length of 0.45mm and the chord height of 0.2 mm.
When the radio frequency signal back side pad is the circular component, radius 0.225mm, be equipped with annular isolation solder mask between radio frequency signal back side pad and the lower metal sheet 3, annular isolation solder mask is the ring that the width is 0.175 mm.
The aperture of the radio-frequency signal vertical transition hole 8 is 0.09mm, the aperture of the grounding vertical transition hole 6 is 0.09mm, and the distance between the radio-frequency signal vertical transition hole 8 and the central connecting line of the grounding vertical transition holes 6 in the same row is 0.7mm.
The diameter of the radio frequency signal function solder ball 9 is 0.5mm, the diameter of the grounding solder ball 7 is 0.5mm, and the distance between the radio frequency signal function solder ball 9 and the central connecting line of the grounding solder balls 7 in the same row is 0.8mm.
The ceramic medium 2 is alumina ceramic, and the dielectric constant is 9.8.
(3) Design of assembly method
The BGA vertical interconnection structure provided by the invention has a simple and convenient assembly process, the radio frequency signal front bonding pad 4 is bonded and connected with a chip by adopting a gold wire bonding wire, then ball planting welding is carried out on the radio frequency signal back bonding pad, the ceramic medium 2 with the welding balls is taken as a device and is assembled with the lower adapter plate by adopting a standard SMT process, and the lower adapter plate can be selected from a PCB (printed circuit board) and an LTCC (low temperature co-fired ceramic) substrate.
The BGA vertical interconnection structure provided by the invention can realize good vertical transmission of radio frequency signals within 20GHz, and return loss S11 and S22 can be better than-20 dB.
The BGA vertical interconnection structure provided by the invention is simple, is suitable for a reflow soldering process and is simple and convenient to operate.
It is another object of the present invention to provide a package including the BGA ceramic vertical interconnect structure. The tube shell provided by the invention adopts the vertical interconnection structure, so that the broadband high-frequency transmission performance of the device can be improved, and the transmission reliability of the device can be improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (8)
1. BGA pottery vertical interconnection structure based on broadband transmission, its characterized in that includes:
the ceramic medium is provided with a radio frequency signal vertical transition hole and two rows of grounding vertical transition holes, and the two rows of grounding vertical transition holes are symmetrically arranged on two sides of the radio frequency signal vertical transition hole;
the upper metal plate is arranged on the front surface of the ceramic medium, a front surface welding-resistant windowing area is arranged at the position, corresponding to the radio-frequency signal vertical transition hole, of the upper metal plate, a radio-frequency signal front surface bonding pad connected with the radio-frequency signal vertical transition hole is arranged in the front surface welding-resistant windowing area, and the radio-frequency signal front surface bonding pad is in welding-resistant isolation with the upper metal plate;
the lower metal plate is arranged on the back of the ceramic medium, a back welding-resisting window area is arranged at the position, corresponding to the radio-frequency signal vertical transition hole, of the lower metal plate, a radio-frequency signal back bonding pad connected with the radio-frequency signal vertical transition hole is arranged in the back welding-resisting window area, and welding-resisting isolation is performed between the radio-frequency signal back bonding pad and the lower metal plate;
the grounding welding balls are connected to one side, far away from the back surface of the ceramic medium, of the lower metal plate, and two grounding welding balls are arranged in any row of the grounding vertical transition holes; and
the radio frequency signal function solder ball is connected with the radio frequency signal back bonding pad;
the structure of the radio frequency signal front bonding pad is an axisymmetric graph structure with gradually changed width;
the axisymmetric pattern structure is a semicircular structure, and the axisymmetric line of the semicircular structure is vertical to the central connecting line of any one row of the vertical grounding transition holes;
the front surface anti-welding windowing region is in a closed semicircular structure and is arched in the same direction as the semicircular structure of the radio frequency signal front surface bonding pad.
2. The broadband transport based BGA ceramic vertical interconnect structure of claim 1 wherein an orthographic projection of said rf signal vertical transition hole on said rf signal front side pad is within a pattern of said rf signal front side pad.
3. The broadband transmission based BGA ceramic vertical interconnect structure of claim 1 wherein said rf signal backside pads are circular in configuration.
4. The wideband transmission based BGA ceramic vertical interconnect structure of claim 3 wherein said isolation solder mask between said rf signal back pad and said lower metal plate is a circular ring structure.
5. The broadband transport based BGA ceramic vertical interconnect structure of claim 3, wherein said rf signal vertical transition hole has an aperture smaller than a diameter of said rf signal backside pad.
6. The wideband transmission based BGA ceramic vertical interconnect structure of claim 1 wherein said rf signal front side pads have a thickness that is the same as the thickness of said upper metal plate and said rf signal back side pads have a thickness that is the same as the thickness of said lower metal plate.
7. The broadband transport based BGA ceramic vertical interconnect structure of claim 1 wherein in any row of said ground vertical transition holes, two of said ground vertical transition holes at opposite ends are connected to said ground solder balls.
8. A package comprising a BGA ceramic vertical interconnect structure of any one of claims 1-7.
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| CN112614813A (en) * | 2020-12-17 | 2021-04-06 | 中国电子科技集团公司第十三研究所 | Ultrahigh frequency surface-mounted ceramic vertical interconnection structure and packaging structure |
| CN114496969B (en) * | 2021-12-07 | 2022-09-23 | 合肥圣达电子科技实业有限公司 | Double-cavity ceramic packaging shell and preparation method thereof |
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| CN101395979A (en) * | 2006-03-03 | 2009-03-25 | 日本电气株式会社 | Broadband transition from a via interconnection to a planar transmission line in a multilayer substrate |
| US8487430B1 (en) * | 2010-01-21 | 2013-07-16 | Semtech Corporation | Multi-layer high-speed integrated circuit ball grid array package and process |
| CN108063302A (en) * | 2017-12-07 | 2018-05-22 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | The vertical interconnection architecture of radio frequency substrate |
| CN111009711A (en) * | 2019-12-27 | 2020-04-14 | 航天科工微系统技术有限公司 | Microwave signal vertical interconnection structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US8907470B2 (en) * | 2013-02-21 | 2014-12-09 | International Business Machines Corporation | Millimeter wave wafer level chip scale packaging (WLCSP) device and related method |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101395979A (en) * | 2006-03-03 | 2009-03-25 | 日本电气株式会社 | Broadband transition from a via interconnection to a planar transmission line in a multilayer substrate |
| US8487430B1 (en) * | 2010-01-21 | 2013-07-16 | Semtech Corporation | Multi-layer high-speed integrated circuit ball grid array package and process |
| CN108063302A (en) * | 2017-12-07 | 2018-05-22 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | The vertical interconnection architecture of radio frequency substrate |
| CN111009711A (en) * | 2019-12-27 | 2020-04-14 | 航天科工微系统技术有限公司 | Microwave signal vertical interconnection structure |
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