CN112600457A - Compact solid-state bipolar fast-edge nanosecond pulse power supply system and operation method - Google Patents
Compact solid-state bipolar fast-edge nanosecond pulse power supply system and operation method Download PDFInfo
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- H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
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Abstract
The invention discloses a compact solid bipolar fast-edge nanosecond pulse power supply system and an operation method, and relates to the field of pulse power technology and fast pulse power supplies. The power supply system comprises a bipolar pulse power supply M, wherein the bipolar pulse power supply M comprises a switch driving module, a pulse voltage transformation module, a bipolar pulse modulation module and a bipolar high-voltage direct-current power supply; the switch driving module is sequentially connected with the pulse transformation module and the bipolar pulse modulation module; meanwhile, the bipolar pulse modulation module is also connected with the power output end of the bipolar high-voltage direct-current power supply; the common output end of the bipolar pulse modulation module is connected with a load to form a complete current loop. The invention can solve the comprehensive requirements of narrow pulse output capacity, adjustable pulse width, accurate amplitude, small jitter, ns-level rising and falling edges, compact structure, high reliability and the like, has simple design, can obtain excellent high-amplitude pulse generation effect, has the advantages of low loss efficiency, long service life and the like, and has important application in the field of pulse power supply application.
Description
Technical Field
The invention relates to the field of pulse power technology and fast pulse power, in particular to a compact solid bipolar fast edge nanosecond pulse power system and an operation method, which can be applied to systems such as medical and scientific research lasers, electron accelerators and the like.
Background
The fast-edge nanosecond pulse power supply has wide application in the fields of medical and scientific research lasers, medical electronic instruments, electron accelerators, framing camera tests and the like. Particularly, in an electro-optic Q-switching technology used in a medical and scientific research laser system, a fast-edge pulse with certain pulse width and amplitude is required to be generated by a fast-edge nanosecond pulse power supply to drive a Q-switching switch, and the on-off of the electro-optic switch is controlled, so that loss control in an optical resonant cavity is adjusted, and laser pulse shaping is realized. Along with the expansion of the application occasions of the laser technology, the output pulse width of the laser needs to be controlled in nanosecond level, the control accuracy and the universality need to be further improved, and meanwhile, the requirements on other technical indexes of the electro-optical Q-switching are gradually improved. Under the traction of the requirements in the fields of lasers and the like, the requirements on the functional indexes of a fast-edge nanosecond pulse power supply are also continuously improved, wherein the technical requirements on narrow pulse output capability, adjustable pulse width, accurate amplitude, small jitter, ns-level rising and falling edges, compact structure, high reliability and the like become important objects of attention.
The existing pulse driving power supplies have various types, and have advantages and disadvantages, but cannot simultaneously cover various technical requirements. Nanosecond pulse power supplies based on gas switches, magnetic switches, and the like as switching devices are large in weight and volume, and it is difficult to achieve high repetition frequencies. Therefore, the technology using semiconductor solid state devices (mainly MOSFET, avalanche transistors, etc.) as switches is gradually becoming the mainstream technical route in some fields. A pulse power supply developed based on a Marx circuit principle of an avalanche diode outputs narrow pulse width pulses, the leading edge reaches ps level, but pulse width parameters cannot be adjusted; the voltage resistance of a single tube is limited to be low, the number of Marx stages is too many under the high-amplitude design, and the reliability is reduced. The nanosecond pulse power supply based on MOSFET device design occupies the mainstream market, can basically satisfy most of functional index requirements for nanosecond pulse output, but also has certain defects and development space: firstly, on the basis of ensuring that the fast rising and falling edges and the pulse width are adjustable, the narrow pulse width within 20ns is difficult to output at the same time; secondly, in the topological design of the pulse modulation circuit, the voltage-sharing problem of the switching device is often solved at the cost of increasing the design complexity and losing the efficiency; thirdly, most of the existing nanosecond pulse sources are instrument type equipment, and the comprehensive design considering both functional indexes and compact appearance is lacked.
Disclosure of Invention
In order to overcome the defects of the high-voltage pulse power supply in the prior art, the invention provides the compact solid-state bipolar fast-edge nanosecond pulse power supply system and the operation method, which can meet the comprehensive requirements of narrow pulse output capacity, adjustable pulse width, accurate amplitude, small jitter, ns-level rising and falling edges, compact structure, high reliability and the like.
The technical scheme adopted by the invention is as follows:
a compact solid-state bipolar fast-edge nanosecond pulse power supply system comprises one or more bipolar pulse power supplies M, wherein each bipolar pulse power supply M comprises a switch driving module, a pulse voltage transformation module, a bipolar pulse modulation module and a bipolar high-voltage direct-current power supply;
the switch driving module is sequentially connected with the pulse transformation module and the bipolar pulse modulation module; meanwhile, the bipolar pulse modulation module is also connected with the power output end of the bipolar high-voltage direct-current power supply; the common output end of the bipolar pulse modulation module is connected with a load to form a complete current loop.
After an external control signal is transmitted to the bipolar pulse power supply M, the control signal is firstly processed by the switch driving module, and two paths of driving signals with certain pulse width and strong driving capability are simultaneously generated according to the front edge and the rear edge of the control signal respectively; the two driving signals generate two driving signals after electromagnetic isolation through the pulse voltage transformation module; the two isolated driving signals are respectively used as opening and closing driving signals of the bipolar pulse modulation module to control an MOSFET switch in the bipolar pulse modulation module, so that high-voltage fast pulse output with positive and negative polarities is generated.
The bipolar high-voltage direct-current power supply converts 24V direct-current input into positive and negative high-voltage direct-current outputs, and provides sufficient high-voltage direct-current power supply for the bipolar pulse modulation module.
The switch driving module comprises three levels of a monostable trigger, a high-speed driver and an MOSFET driving stage, when an external control signal enters the switch driving module, the two monostable triggers respectively trigger and respond to the rising edge and the falling edge of the control signal, and output positive pulses with preset pulse widths are respectively generated.
The high-speed driver is used for converting two paths of 5V pulse signals generated by the monostable trigger into driving pulses with the amplitude of 12V, the leading edge of ns level and the pulse width of less than 10ns and driving a rear-stage MOSFET driving level; the MOSFET driving stage converts two paths of driving pulses from the front-stage high-speed driver according to requirements and generates two paths of driving signals S with higher voltage1、S2。
Two paths of driving signals S output by the switch driving module 11、S2The two paths of driving signals S after isolation are obtained by isolating through the pulse voltage transformation module1′、S2', and are sent to the input of the bipolar pulse modulation module.
The pulse transformation module comprises two groups of pulse transformers with the transformation ratio of 1:1, the primary side is a cable through which a driving signal passes, and the secondary side is connected with the bipolar pulse modulation module; two paths of driving signals S entering pulse voltage transformation module1、S2Respectively passing through two groups of pulse transformers, each group of pulse transformers is formed by connecting multiple pulse transformers in series, and the number of stages of each group is NC(two groups of the same number of stages) and the requirement S in the bipolar pulse modulation module1′、S2' the number of signal input paths is equal, and the pulse transformers in each group will equally divide the driving signal S1、S2Pulse amplitude V ofS1、VS2Output voltage V of secondary side of pulse transformer of each stageS1′、VS2' and VS1、VS2The relationship is as follows: vS1′＝VS1/NC,VS2′＝VS2/NC。
The bipolar pulse modulation module 3 mainly comprises a charging current-limiting resistor (R)1、R2) Energy storage capacitor (C)1、C2) Damping resistor (R)3、R4) Symmetrical MOSFET double-switch module (Q)1、Q2、Q3、Q4) Is used for receiving two paths of power input HV +, HV-from a bipolar high-voltage direct-current power supply 4 and responding to two paths of isolated driving signals S output by the pulse transformation module 21′、S2' the internal switch device works according to the logic time sequence of the driving signal, thereby generating high-voltage fast pulse output with positive and negative polarities.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. compared with the traditional charging method, the scheme of the compact solid-state bipolar fast-edge nanosecond pulse power supply system provided by the invention can meet the comprehensive requirements of narrow pulse output capability, adjustable pulse width, accurate amplitude, small jitter, ns-level rising and falling edges, compact structure, high reliability and the like.
2. The compact solid bipolar fast-edge nanosecond pulse power supply system and the operation scheme provided by the invention have the advantages of simple design, capability of obtaining an excellent high-amplitude pulse generation effect, low loss efficiency, long service life and the like, and have important application in the field of pulse power supply application.
Drawings
Fig. 1 is a schematic diagram of a compact solid-state bipolar fast-edge nanosecond pulse power supply system provided by the invention.
Fig. 2 is a schematic diagram of the composition and operation of the switch driving module of the compact solid bipolar fast-edge nanosecond pulse power supply system provided by the invention.
Fig. 3 is a schematic diagram of a pulse voltage transformation module of the compact solid-state bipolar fast-edge nanosecond pulse power supply system provided by the invention.
Fig. 4 is a circuit topology diagram of a conventional high voltage pulse modulation module.
Fig. 5 is a circuit topology diagram of a bipolar pulse modulation module of the compact solid-state bipolar fast-edge nanosecond pulse power supply system provided by the invention.
Fig. 6 is a schematic diagram of bipolar pulse output superposition of the compact solid-state bipolar fast-edge nanosecond pulse power supply system provided by the invention.
Fig. 7 is a schematic diagram of superposition of a multi-bipolar pulse power supply of the compact solid-state bipolar fast-edge nanosecond pulse power supply system provided by the invention.
The symbols in the figure are illustrated as follows: the device comprises a switch driving module 1, a pulse transformation module 2, a bipolar pulse modulation module 3 and a bipolar high-voltage direct-current power supply 4.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Wherein the switch driving module 1 is connected with the pulse transformation module 2 and the bipolar pulse modulation module 3 in sequence; meanwhile, the bipolar pulse modulation module 3 is also connected with the power output end of the bipolar high-voltage direct-current power supply 4; the common output end of the bipolar pulse modulation module 3 is connected with a load to form a complete current loop.
After an external control signal is transmitted to each bipolar pulse power supply M, the switch driving module 1 processes the control signal and simultaneously generates two paths of driving signals with certain pulse width and strong driving capability according to the front edge and the rear edge of the control signal; the two driving signals generate two driving signals after electromagnetic isolation through the pulse voltage transformation module 2; the two isolated driving signals are respectively used as opening and closing driving signals of the bipolar pulse modulation module 3 to control the MOSFET switch in the bipolar pulse modulation module 3, so that high-voltage fast pulse output with positive and negative polarities is generated.
Meanwhile, the bipolar high-voltage direct-current power supply 4 converts the 24V direct-current input into positive and negative high-voltage direct-current outputs, and provides enough high-voltage direct-current power supply for the bipolar pulse modulation module 3.
The amplitude of the high-voltage fast pulse finally output by the bipolar fast-edge nanosecond pulse power supply system is the superposed output of all bipolar pulse power supplies M, and the pulse width and the working frequency of the high-voltage fast pulse are determined by external control signals.
Example 2
The present embodiment is used to describe the structure and the operation mode of each module in the bipolar fast edge nanosecond pulse power supply system in detail.
1) The design structure of the switch driving module 1 is shown in fig. 2. The switch driving module 1 adopts a three-level driving design and comprises a monostable trigger, a high-speed driver and an MOSFET driving level. After an external control signal enters the switch driving module 1, two monostable triggers respectively trigger and respond to the rising edge and the falling edge of the control signal, and output positive pulses with preset pulse widths are respectively generated. The preset pulse width (half-width) of the two paths of output positive pulses is less than 20ns, and the rising edge and the falling edge are better than 10 ns.
Therefore, through accurate pulse width and rising/falling edge setting, when the pulse width of the control signal is narrow (such as 20 ns-30 ns), the two paths of output signals are not overlapped, so that a dead zone of the two paths of switching signals is ensured, and the dead zone is one of the key points that the bipolar pulse power supply can output narrow pulses.
The high-speed driver adopts a high-speed large-current driving chip, converts two paths of 5V signals generated by the monostable trigger into driving pulses with the amplitude of 12V and the leading edge of ns level, and is used for driving a rear-stage MOSFET driving stage circuit. The MOSFET driving stage adopts an MOSFET device with rapid switching characteristic and small on-state internal resistance, converts two driving pulses from a preceding stage high-speed driver as required and generates two driving signals S with higher voltage1、S2. The driving signal S1、S2The rising edge and the falling edge are better than 10ns, and the pulse width is less than 20 ns.
2) Two paths of driving signals S output by the switch driving module 11、S2The pulse transformation module 2 is used for isolation to obtain two isolated driving signals S1′、S2', and is sent to the input of the bipolar pulse modulation module 3.
As shown in fig. 3, the pulse transformer module 2 forms a pulse transformer with a transformation ratio of 1:1 by passing a cable through a magnetic ring, the primary side is the cable through which a driving signal passes, and the secondary side is connected to the bipolar pulse modulation module 3. Two paths of driving signals S entering the pulse transformation module 21、S2Respectively passing through two groups of pulse transformers, each group of pulse transformers is formed by connecting multiple pulse transformers in series, and the number of stages of each group is NC(the two groups have the same number of stages) and the bipolar pulse modulation module 3 needs S1′、S2' the number of signal input paths is equal. And the pulse transformers in each group will equally divide the drive signal S1、S2Pulse amplitude V ofS1、VS2Output voltage V of secondary side of pulse transformer of each stageS1′、VS2' and VS1、VS2The relationship is as follows: vS1′＝VS1/NC,VS2′＝VS2/NC。
The magnetic ring with better high-frequency characteristic is selected in the pulse transformation structural design, so that the formed pulse transformer has good high-frequency characteristic, and the transformed signal is not distorted or slowed down.
3) The output of the bipolar high-voltage direct-current power supply 4 is provided with three output interfaces, namely HV +, HV-and GND, and GND is the reference ground of the power supply and is used as a median point of the output amplitude. The HV + and the HV-are respectively positive and negative high-voltage direct-current outputs relative to GND, and the HV + and the HV-are respectively connected with two paths of power supply input ends of the bipolar pulse modulation module 3.
4) The bipolar pulse modulation module 3 is used for receiving two paths of power input HV +, HV-from the bipolar high-voltage direct-current power supply 4 and responding to two paths of isolated driving signals S output by the pulse transformation module 21′、S2' the internal switch device works according to the logic time sequence of the driving signal, thereby generating high-voltage fast pulse output with positive and negative polarities.
The conventional and commonly used high voltage modulation module circuit topology is shown in fig. 4(a) -4 (b), wherein the high voltage pulse modulation circuit scheme in fig. 4(a) adopts a MOSFET multi-stage series mode to improve the overall voltage endurance capability, but because of the difference between a plurality of MOSFETs, the respective voltage division is not uniform, and there is a greater risk of breakdown; fig. 4(b) is a design that a voltage equalizing resistor is added on the basis of the series model shown in fig. 4(a), so that the voltage equalizing problem is solved to a certain extent, but a quiescent current exists in the whole loop, and the system efficiency is reduced.
The bipolar pulse modulation module 3 in the technical scheme of the invention adopts a circuit topology structure as shown in figure 5 and mainly comprises a charging current-limiting resistor (R)1、R2) Energy storage capacitor (C)1、C2) Damping resistor (R)3、R4) Symmetrical MOSFET double-switch module (Q)1、Q2、Q3、Q4) And (4) forming. Wherein the symmetrical MOSFET double-switch module comprises two symmetrical double-MOSFET switch branches, wherein the MOSFET double-switch Q1、Q3Is located on the branch of the power input HV +, and is respectively connected with two paths of driving signals S1′、S2' connected; MOSFET two-switch Q1、Q3On the branch of the power supply input HV-and also with two drive signals S1′、S2' connected, and MOSFET switch Q1、Q2、Q3、Q4Are connected to a load CL.
The bipolar pulse modulation module 3 adopts a positive and negative bipolar pulse superposition mode, and forms a pulse with twice amplitude after one path of positive pulse and one path of negative pulse are superposed, as shown in fig. 6, the maximum advantage of the positive and negative bipolar pulse superposition design is that the withstand voltage of a single discharge loop is reduced to 1/2, which is beneficial to reducing the requirements of voltage-sharing design complexity and component withstand voltage coefficient.
5) In one embodiment, the design scheme of the invention comprises a plurality of bipolar pulse power supplies M for realizing multi-module pulse superposition design: the output of the single bipolar pulse power supply shown in the foregoing embodiment is up to Vomax of 2kV, so in the embodiment of the present invention, a plurality of two-stage pulse power supplies are connected in series to achieve a pulse output with a higher amplitude.
As shown in fig. 7, a plurality of bipolar pulse power supplies M1, M2, … … Mn are connected in series, and the relation between the series number n and the target output amplitude Vo is: vo is less than or equal to n Vomax. And in the series mode design, the mutual isolation of the power supply of each bipolar pulse power supply must be ensured.
Example 3
The present embodiment provides an explanation of the operation method of the aforementioned bipolar fast edge nanosecond pulse power supply system, and a more detailed description of the implementation and operation principle of the high-voltage pulse modulation output.
As shown in the foregoing embodiment and fig. 5, for the bipolar pulse modulation module 3, HV + and HV-are positive and negative high-voltage direct-current inputs respectively corresponding to GND, C1 and C2 are energy storage and filter capacitors, Q1, Q2, Q3 and Q4 are MOSFET dual switches, and S1 'and S2' are signals obtained by isolating the driving signals S1 and S2 respectively and are used as turn-on and turn-off signals of the module circuit respectively.
1) After the pulse power supply system is started, the switch driving module 1 of the bipolar pulse power supply M receives an external control signal and simultaneously generates two paths of driving signals S1 and S2 with certain pulse width and strong driving capability according to the front edge and the rear edge of the control signal respectively;
2) the two driving signals S1 and S2 are isolated by the pulse transformation module 2, and two driving signals S1 'and S2' after electromagnetic isolation are generated;
3) the two isolated driving signals S1 'and S2' are respectively used as the on/off driving signals of the bipolar pulse modulation module 3 to control the operation of the MOSFET switch inside the bipolar pulse modulation module 3, thereby generating high-voltage fast pulse output with positive and negative polarities.
Specifically, the step 3) comprises the following steps:
3.1) when the S1' pulse is generated, the switch Q1 is turned on, and C1 charges the load CL through Q1 and R3 to form the rising edge (relative to GND) of the positive pulse; similarly, after the pulse of S1' is generated, the switch Q2 is turned on, and C2 charges the load C through Q2 and R4, forming the rising edge (opposite to GND) of the negative pulse;
3.2) because S1 'and S2' have 'dead zones', Q1, Q2, Q3 and Q4 in the circuit can not be conducted at the same time, after the S1 'pulse is generated and before the S2' pulse is generated, Q1, Q2, Q3 and Q4 in the circuit are all in an open circuit state, the load CL maintains a high-voltage state unchanged, and a flat top part of the high-voltage pulse is formed;
3.3) when the S2' pulse is generated, the switch Q3 is conducted, the load CL discharges to R3 and Q3, and the falling edge (relative GND) of the positive pulse is formed; similarly, after the pulse of S2' is generated, the switch Q4 is turned on, CL discharges to Q4 and R4, and the falling edge (opposite to GND) of the negative pulse is formed;
3.4) simultaneously performing the steps 3.1) -3.4), the bipolar pulse modulation module 3 continuously generates two paths of positive and negative pulse outputs and superposes the two paths of positive and negative pulse outputs into one path of high-voltage pulse output, as shown in fig. 6.
4) And the outputs of all the bipolar pulse power supplies M are superposed to obtain high-voltage pulses with high amplitudes, and the high-voltage pulses are used as the final output of the bipolar fast-edge nanosecond pulse power supply system.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should take the description as a whole, and the technical solutions in the embodiments may be appropriately combined to form other embodiments understood by those skilled in the art.
The invention is not limited to the foregoing embodiments. The invention extends to any novel feature or any novel combination of features disclosed in this specification and any novel method or process steps or any novel combination of features disclosed.
Claims (10)
1. A compact solid-state bipolar fast-edge nanosecond pulse power supply system is characterized by comprising one or more bipolar pulse power supplies M, wherein each bipolar pulse power supply M comprises a switch driving module (1), a pulse transformation module (2), a bipolar pulse modulation module (3) and a bipolar high-voltage direct-current power supply (4);
wherein the switch driving module (1) is connected with the pulse transformation module (2) and the bipolar pulse modulation module (3) in sequence; meanwhile, the bipolar pulse modulation module (3) is also connected with the power output end of the bipolar high-voltage direct-current power supply (4); the common output end of the bipolar pulse modulation module (3) is connected with a load to form a complete current loop.
2. The compact solid-state bipolar fast-edge nanosecond pulse power supply system as claimed in claim 1, wherein after the external control signal is transmitted to the bipolar pulse power supply M, the control signal is first processed by the switch driving module (1), and two paths of driving signals with certain pulse width and strong driving capability are simultaneously generated according to the front and rear edges of the control signal respectively; the two driving signals generate two driving signals after electromagnetic isolation through the pulse voltage transformation module (2); the two isolated driving signals are respectively used as opening and closing driving signals of the bipolar pulse modulation module (3) to control an MOSFET switch in the bipolar pulse modulation module (3), so that high-voltage fast pulse output with positive and negative polarities is generated.
3. The compact solid-state bipolar fast-edge nanosecond pulse power supply system according to claim 2, wherein said bipolar hvdc power supply (4) converts a 24V dc input to a positive and negative two-way hvdc output to provide sufficient hvdc supply for said bipolar pulse modulation module (3).
4. The compact solid-state bipolar fast-edge nanosecond pulse power supply system according to claim 2, wherein the switch driving module (1) comprises three levels of monostable flip-flops, a high-speed driver and a MOSFET driving stage, and when an external control signal enters the switch driving module (1), the two monostable flip-flops respectively trigger and respond to a rising edge and a falling edge of the control signal, and each of the monostable flip-flops generates an output positive pulse with a preset pulse width.
5. A compact solid-state bipolar fast-edge nanosecond pulse power supply system as claimed in claim 4, wherein said high-speed driver is used for converting two 5V pulse signals generated by a monostable trigger into a driving pulse with amplitude of 12V, leading edge of ns level and pulse width of less than 10ns, and for driving the MOSFET driving stage at the rear stage; the MOSFET driving stage converts two paths of driving pulses from the front-stage high-speed driver according to requirements and generates two paths of driving signals S with higher voltage1、S2。
6. The compact solid-state bipolar fast-edge nanosecond pulse power supply system according to claim 2, wherein the two driving signals S output by the switch driving module (1) are two paths of driving signals S1、S2The two paths of driving signals S after isolation are obtained by isolating through the pulse voltage transformation module (2)1′、S2', and is sent to the input of the bipolar pulse modulation module (3).
7. A compact solid-state bipolar fast edge nanosecond pulse power supply system according to claim 6, wherein said pulse transformation module (2) comprises two sets of pulse transformers with a transformation ratio of 1:1,the primary side is connected with a driving signal, and the secondary side is connected with a bipolar pulse modulation module (3); two paths of driving signals S entering the pulse transformation module (2)1、S2Respectively pass through two groups of pulse transformers, each group of pulse transformers is formed by connecting multi-stage pulse transformers in series, the two groups have the same stage number, and each group has the stage number NCAnd the requirement S in the bipolar pulse modulation module 31′、S2' the number of signal input paths is equal, and the pulse transformers in each group will equally divide the driving signal S1、S2Pulse amplitude V ofS1、VS2Output voltage V of secondary side of pulse transformer of each stageS1′、VS2' and VS1、VS2The relationship is as follows: vS1′＝VS1/NC,VS2′＝VS2/NC。
8. A compact solid-state bipolar fast edge nanosecond pulse power supply system according to claim 7, wherein said bipolar pulse modulation module (3) is mainly composed of charging current limiting resistors (Rm)1、R2) Energy storage capacitor (C)1、C2) Damping resistor (R)3、R4) Symmetrical MOSFET double-switch module (Q)1、Q2、Q3、Q4) Is used for receiving two paths of power input HV +, HV-from a bipolar high-voltage direct-current power supply (4) and responding to two paths of isolated driving signals S output by the pulse transformation module (2)1′、S2' the internal switch device works according to the logic time sequence of the driving signal, thereby generating high-voltage fast pulse output with positive and negative polarities.
9. A method of operation based on a bipolar fast edge nanosecond pulsed power supply system according to any of claims 1-8, the method comprising:
1) after a pulse power supply system is started, a switch driving module (1) of a bipolar pulse power supply M receives an external control signal and simultaneously generates two paths of driving signals S1 and S2 with certain pulse width and strong driving capability according to the front edge and the rear edge of the control signal respectively;
2) the two driving signals S1 and S2 are isolated by the pulse transformation module (2) to generate two driving signals S1 'and S2' after electromagnetic isolation;
3) the two isolated driving signals S1 'and S2' are respectively used as opening and closing driving signals of the bipolar pulse modulation module (3) to control the work of an MOSFET switch in the bipolar pulse modulation module (3), so that high-voltage fast pulse output with positive and negative polarities is generated.
4) And the outputs of all the bipolar pulse power supplies M are superposed to obtain high-voltage pulses with high amplitudes, and the high-voltage pulses are used as the final output of the bipolar fast-edge nanosecond pulse power supply system.
10. The operation method of the bipolar fast edge nanosecond pulse power supply system according to claim 9, wherein the step 3) comprises:
3.1) after the S1' pulse is generated, the switch Q1 is turned on, and the capacitor C1 charges the load CL through the switch Q1 and the resistor R3 to form the rising edge of the positive pulse; similarly, after the pulse S1' is generated, the switch Q2 is turned on, and the capacitor C2 charges the load CL through the switch Q2 and the resistor R4 to form a rising edge of the negative pulse;
3.2) because S1 'and S2' have 'dead zones', Q1, Q2, Q3 and Q4 in the circuit can not be conducted at the same time, after the S1 'pulse is generated and before the S2' pulse is generated, Q1, Q2, Q3 and Q4 in the circuit are all in an open circuit state, the load CL maintains a high-voltage state unchanged, and a flat top part of the high-voltage pulse is formed;
3.3) when the S2' pulse is generated, the switch Q3 is conducted, the load CL discharges to R3 and Q3, and the falling edge of the positive pulse is formed; similarly, after the pulse of S2' is generated, the switch Q4 is turned on, and CL discharges to Q4 and R4 to form the falling edge of the negative pulse;
3.4) repeating the steps 3.1) -3.4) at the same time, the bipolar pulse modulation module 3 continuously generates two paths of positive and negative pulse outputs and superposes the two paths of positive and negative pulse outputs into one path of high-voltage pulse output.
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