CN105811798A - Fast-edge high-frequency and high-voltage pulse power supply - Google Patents
Fast-edge high-frequency and high-voltage pulse power supply Download PDFInfo
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- CN105811798A CN105811798A CN201610286235.0A CN201610286235A CN105811798A CN 105811798 A CN105811798 A CN 105811798A CN 201610286235 A CN201610286235 A CN 201610286235A CN 105811798 A CN105811798 A CN 105811798A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/012—Modifications of generator to improve response time or to decrease power consumption
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/013—Modifications of generator to prevent operation by noise or interference
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/017—Adjustment of width or dutycycle of pulses
Abstract
The invention discloses a fast-edge high-frequency and high-voltage pulse power supply. The power supply comprises a power supply unit (1), a DC high-voltage unit (2), an input pulse or modulation signal unit (3), a logic control unit (4), an oscillation suppression and impedance matching unit (5), a front driving and isolation unit (6) and a high-voltage pulse output unit (7), wherein the oscillation suppression and impedance matching unit (5) is an oscillation suppression unit and an impedance matching unit which comprise a RLC series-parallel circuit. The power supply has characteristics of small-size curving, the maximum output voltage is 10kV, the rising/descending time is smaller than 12 nanoseconds, the pulse width (100 nanoseconds to direct current) is continuous and adjustable, the repetition frequency of the output pulse is greater than 1MHz, the output ripple of the high-voltage pulse is smaller than 1%, particularly, the voltage amplitude, the pulse width and the working frequency are continuous and adjustable, and the urgent demands for accuracy, miniaturization, solidification and convenience in adjustment of the fast-edge high-frequency and high-voltage pulse power supply during actual application are greatly adapted.
Description
Technical field
The present invention relates to a kind of fast along high-frequency and high-voltage impulse power supply, particularly to a kind of be drive with ON-OFF control circuit fast along high-frequency and high-voltage impulse power supply based on MOSFET element, belong to high-voltage pulse power source technical field.
Background technology
Quickly, high-voltage pulse produces technology and is widely used in the fields such as laser technology, nuclear physics, high-speed photography, measuring technology and ULTRA-WIDEBAND RADAR.Such as in Q-switched laser, the speed of Q electrooptical switching, decide pulse laser light energy output size and peak power, and the speed of Q electrooptical switching is driven power supply to determine by its high-voltage pulse；For high speed photography, edge stable, fast, high-voltage pulse are the guarantees improving the temporal resolution such as scanning camera and framing camera.At a high speed, high-voltage pulse as the sampling pulse of many instrument and equipments or gating pulse, be the key technical indexes improving instrument performance in measuring technology；The wideband pulse on rapid increase edge is also the premise that ULTRA-WIDEBAND RADAR is intended to obtain broadband emission output.In a word, one reliable, stable, high performance has broad application prospects along high-frequency and high-voltage impulse power supply soon.
Existing fast edge, high-voltage pulse power source mainly divide two classes: one is based on the technology of the electron tubes such as secondary pipe, discharging gap switch, trigger tube, hydrogen brake pipe；The two solid state device technology being based on avalanche transistor and high pressure field effect transistor (MOSFET) etc..Secondary pipe advantage is that repetition rate is high, trigger delay and rock little, and shortcoming is that pulse output voltage amplitude is relatively low only has several hectovolts, and the life-span is short, unstable, noise is big；Discharging gap switch easily produces the bigger pulse amplitude of more than kilovolt and shorter subnanosecond level rise time such as spark gap, but repetition rate is low, rock big；Such as Chinese patent " Full-automatic intelligent strong fast rising electromagnetic pulse generator " (CN102323501B), adopt air gap spark switch, can produce the rise time is the single along pulse of 2.3 ± 0.5ns, but its pulsewidth is narrower, can not arbitrarily regulate, and the adjustability aspect for pulse amplitude and repetition rate is open without technical scheme；Trigger tube running voltage can reach tens kilovolts, and shortcoming is to trigger pulse voltage height, rocks bigger；The operating voltage range of thyratron is up to hundreds of kilovolts, switching speed nanosecond, and repetition rate is also higher, shortcoming be rock bigger, bulky, such as the Chinese patent " ultra-compact high-voltage nanosecond pulse source " of publication No. CN104158430A, its gross weight is close to 100kg, simultaneously, complicated with the device entirety that such device is core, peripheral driver is many, reduces reliability, limiting its range of application, the occasion as high in required precision, volume is little is especially inadequate.
In solid state device technology, snowslide pipe pulse source can produce the high voltage narrow pulse of amplitude tens kilovolts, forward position picosecond, but because of device own characteristic, causes that current driving ability is poor, and output pulse width adjustability is poor, repetition rate is relatively low.As disclosed in Chinese patent " high voltage square wave avalanche transistor pulse generator " (CN1085024), pulse generator repetition rate is up to 10Hz, maximum load current is 20mA, the adjustable extent of high-voltage pulse width is not more than 10 microseconds.Repetition rate despite the bibliographical information snowslide pipe pulse power can arrive a few kHz, but is little to accomplish tens more than kHz.Simultaneously, owing to the snowslide running voltage of snowslide pipe has an optimum range, particularly the output voltage of single tube is relatively low, improving output voltage must adopt Marx circuit to combine with multitube series connection, by the impact of avalanche transistor series circuit internal resistance, when the number of tubes of series connection increases, the increase of output pulse amplitude is also inconspicuous, and output voltage also is difficult to realize continuously adjustabe, therefore snowslide pipe is applied to this and is extremely limited.For the MOSFET pipe pulse power as switching device, the height that possesses that output pulse power is relatively big, single tube is pressure, output electric current are big, voltage amplitude and the advantage such as width is easily dimmable, but the impact by device junction capacity, output pulse parasitism concussion substantially, reduces stability and the operating frequency of circuit.Such as Chinese patent " a kind of electric-optically Q-switched switch driver ", (CN101719624A) pulse power in is to adopt double; two MOSFET in parallel, switch in turn to improve operating frequency, but without reference to how to reduce output pulse rise/fall time and improve the reliability etc. of circuit, this patent can not realize pulsewidth continuously adjustabe simultaneously.Chinese patent " a kind of high-voltage square-wave generator realizes method " (CN103684360A), adopt snowslide pipe and MOSFET to collectively form high-voltage switch gear and produce high-voltage square-wave, but its output voltage only has 300～1000V, turnable pulse width only 10～220 μ s, also could not providing concrete repetition rate, dutycycle and high-voltage pulse rise/fall in an embodiment along the time, its practicality is restricted undoubtedly.Chinese patent " high-voltage square-wave generator of a kind of adjustable pulse width and high-voltage square-wave method for generation " (CN105391428A), adopt MOSFET that pipe is realized high-voltage switch gear, repetition rate is several ns up to 3.3MHz, rise/fall along the time, but its output voltage only has-200～50V.Utility model patent " a kind of all solid state high voltage Pulased power supply unit " (CN202550918U), adopt substantial amounts of MOSFET, IGBT series connection and paralleling switch, but repetition rate only has 10Hz～1kHz, maximum duty cycle to be 1%, concrete high-voltage pulse rise/fall could not be provided along the time, illustrate that this power supply can not really obtain fast along high-voltage pulse.Utility model patent " in the experiment of Rydberg states field-ionization nanosecond rising edge high voltage pulse generator " (CN203574619U), only in the experiment of Rydberg states field-ionization, and the single along pulse of fast rising edge can only be provided, fast high pressure pulse switch uses BEHLKE company HTS series of modular product, does not have independent intellectual property.ThomasP.Rutten in 2007 et al. comments on (" REVIEWOFSCIENTIFICINSTRUMENTS ", Vol.78, P073108) open a kind of MOSFET high-voltage pulse circuit at scientific instrument, and its operating frequency also only has 1kHz, it is impossible to realize pulsewidth continuously adjustabe.Xian-wangFeng in 2011 et al. comments on (" REVIEWOFSCIENTIFICINSTRUMENTS " Vol.82 at scientific instrument, P075102) open a kind of MOSFET high-voltage pulse circuit, rising edge relatively slow (～49.04ns), ceiling voltage also only has 3000V, the frequency of pulsewidth and work whether can continuously adjustabe, document also could not relate to.
Summary of the invention
It is an object of the invention to for the deficiencies in the prior art, there is provided a kind of fast along high-frequency and high-voltage impulse power supply, possesses the curing type feature that rapid increase/trailing edge, repetition rate height, pulse voltage height and volume are little, particularly voltage amplitude, pulsewidth and operating frequency continuously adjustabe, has adapted to practical application greatly to precision, miniaturization, solidification and the fast urgent needs along high-frequency and high-voltage impulse power supply easy to adjust.The described fast technical parameter realized along high-frequency and high-voltage impulse power supply includes: maximum output voltage 10kV, rise/fall time be respectively less than 12ns, pulse width (100ns～direct current) continuously adjustabe, output pulse repetition rate more than 1MHz, high-voltage pulse output ripple less than 1%.
In order to achieve the above object, the present invention is by the following technical solutions:
A kind of fast along high-frequency and high-voltage impulse power supply, including power supply unit (1), high direct voltage unit (2), input pulse or modulation signal element (3), logic control element (4), concussion suppression and impedance matching unit (5), pre-driver and isolated location (6), high-voltage pulse output unit (7)；Described high-voltage pulse output unit (7) includes the high-voltage switch gear MOSFET field effect transistor of series connection；External input power is respectively converted into 5V, 12V, 24V constant voltage dc source by said supply unit (1), for powering to other each unit described；Described high direct voltage unit (2) is for converting 24V direct current and after voltage multiplying rectifier through PWM, obtain 0～10kV continuously adjustabe high direct voltage, high voltage switch unit for constituting to described high-voltage switch gear MOSFET field effect transistor is powered, and the amplitude of described high direct voltage unit (2) output DC voltage is equal to the described fast amplitude exporting pulse along high-frequency and high-voltage impulse power supply；Described input pulse or modulation signal element (3) are the calibration pulse being introduced from outside into or modulation signal；It is characterized in that:
Described logic control element (4) for being converted into rise/fall along control signal by input pulse or modulation signal element (3) pulse signal that inputs；
The rise/fall that logic control element (4) is exported by described pre-driver and isolated location (6) carries out power and waveform conversion along control signal, being converted into the high-voltage switch gear MOSFET field effect transistor conducting controlling described high-voltage pulse output unit (7) and the rise/fall turned off along control signal, described rise/fall is the fast along drive waveforms of peak starting voltage value of high moment along control signal；
Described concussion suppresses and impedance matching unit (5) includes RLC series-parallel circuit, for the shake of suppression circuit self-oscillation and High voltage output pulse, and prevents misleading of high-voltage switch gear MOSFET field effect transistor；
Further, concussion suppresses element circuit to be eliminate ghost effect between pulse switch and pre-driver circuitry to produce the higher-order of oscillation, impedance matching unit realizes the impedance matching between the internal resistance adjustment of high voltage power supply, on-off circuit and load, reduces the impact on switching speed of the impedance operator difference because of load and on-off circuit；
In order to ensure the work of the normal reliable of circuit, this control signal must assure that rising, trailing edge high-voltage switch gear can not simultaneously turn on, control logic circuit is realized by digital logic gate, internal pulse signal is also produced by this partial circuit, and the internal switching with external pulse signal is realized by permutator；
Further, the pre-driver of described rising and falling edges and isolated location circuit are the risings exported by control logic circuit, trailing edge control signal carries out power and waveform conversion, voltage and current demand with satisfied driving high-voltage switch gear MOSFET field effect transistor, owing to the charge/discharge rates of high-voltage switch gear MOSFET fet gate input capacitance decides its switching speed, this just requires that gate driver circuit must be able to output instantaneous large-current and has the driving pulse of relatively fast rise time, therefore pre-driver circuit must make the driving pulse of output have the pulse of peak starting voltage value of higher moment, just can provide instantaneous large-current for high-voltage switch gear MOSFET fet gate, to improve the switching speed of high-voltage switch gear MOSFET field effect transistor, adopt counterbalanced procedure to weaken the impact of Miller effect simultaneously；
The rising and falling edges switch process of described high voltage switch unit is: when, after rising edge switch conduction, outfan is connected to high-voltage power supply, output HIGH voltage, forms the rising edge of high-voltage pulse；When after trailing edge switch conduction, outfan is connected to ground, exports low-voltage, forms the trailing edge of high-voltage pulse, the size of this partial circuit size according to output pulse amplitude and selected high-voltage switch gear MOSFET field effect transistor pressure voltage, it is determined that the number of high-voltage switch gear MOSFET field effect transistor series connection.By pulse transformer isolation coupling between pre-driver circuit and high-voltage switch gear, this coupled modes both can realize the independence to each high-voltage switch gear MOSFET field effect transistor and drive, it is simple to cascade, can realize again the unidirectional current isolation of low-pressure side and high-pressure side circuit.
A kind of fast along high-frequency and high-voltage impulse power supply as mentioned above, it is characterized in that: described fast be the rising edge of output high-voltage pulse along high-voltage pulse and the trailing edge time is respectively less than 12ns, or only use single rising edge or trailing edge as required, constitute boosting or move back pressure soon along high-voltage pulse.
It is a kind of fast along high-frequency and high-voltage impulse power supply as mentioned above, it is characterised in that: described logic control element (4) is converted into the rise/fall of high voltage switch unit along control signal, then is individually separated controlling the turn-on and turn-off of high-voltage switch gear MOSFET field effect transistor.
A kind of fast along high-frequency and high-voltage impulse power supply as mentioned above, it is characterized in that: described high-voltage pulse output unit (7) includes the high-voltage switch gear MOSFET field effect transistor of series connection, the bias voltage of described MOSFET pipe is produced by high-voltage capacitance dividing potential drop, and the grid of each high-voltage switch gear MOSFET field effect transistor independently drives through Isolated Pulse Transformer.Be conducive to the increase and decrease of series connection progression.
A kind of fast along high-frequency and high-voltage impulse power supply as mentioned above, it is characterized in that: described output high voltage pulse waveform is consistent with input signal, namely export the pulsewidth of high-voltage pulse, frequency changes with input signal intensity, and output high-voltage pulse amplitude needs 0～10kV continuously adjustabe according to load.
A kind of fast along high-frequency and high-voltage impulse power supply as mentioned above, it is characterized in that: described pre-driver and isolated location (6) including: the plug-type drive circuit of bipolar transistor, high-power MOSFET tube Q1, accelerating diode D1, described accelerating diode D1 positive pole is connected with the grid of high-power MOSFET tube Q1, the resistance R4 being also improved high-power MOSFET tube Q1 turn-off speed is connected between grid and ground, is in series with inductance L1 between source electrode and the ground of high-power MOSFET tube Q1.It provides the benefit that: the junction capacity of described inductance L1 and high-power MOSFET tube Q1, be followed by the pulse waveform conversion function that the impedance of load pulse transformator collectively forms, the driving pulse that pre-driver circuit exports is made to have peak starting voltage value of higher moment, coordinate the connection impedance reducing grid, instantaneous large-current is provided, thus accelerating its conducting for high-voltage switch gear MOSFET fet gate.
The invention has the beneficial effects as follows:
1) present invention has precision, miniaturization, solidification and feature easy to adjust along high-frequency and high-voltage impulse power supply soon.
2) present invention is soon along the frequency of high-frequency and high-voltage impulse power supply from direct current～1MHz, pulse width 100ns～direct current continuously adjustabe, can meet the driving demand of different frequency and pulsewidth, strong adaptability.
3) present invention is soon along the impulse output amplitude continuously adjustabe of high-frequency and high-voltage impulse power supply, and maximum output voltage amplitude is 10kV, and load capacity is strong, can meet the driving demand of different voltage and load.
4) to export the rise/fall time on pulse rise/fall edge, shaky time along high-frequency and high-voltage impulse power supply soon short for the present invention.
Accompanying drawing explanation
Fig. 1 is the basic structure schematic diagram of the present invention；
Fig. 2 is the pre-driver circuitry figure of the present invention；
Fig. 3 is that the switch mosfet with peak starting voltage value of higher moment that records of the embodiment of the present invention is soon along drive waveforms figure；
Fig. 4 is the transformer isolation coupling MOSFET high voltage switch circuit figure of the present invention；
What Fig. 5 was the dutycycle that the embodiment of the present invention records when being 1:1 is fast along hf and hv pulse oscillogram；
What Fig. 6 was dutycycle when being 1:4 is fast along hf and hv pulse oscillogram；
Fig. 7 is that the embodiment of the present invention is soon along hf and hv pulse rising edge waveform；
Fig. 8 is that the embodiment of the present invention is soon along hf and hv pulse trailing edge waveform.
Description of symbols in figure: in Fig. 1: 1 power supply unit, 2 high direct voltage unit, 3 input pulses or modulation signal element, 4 logic control elements, 5 concussions suppress and impedance matching unit, 6 pre-driver and isolated location, 7 high-voltage pulse output units, " → " represent wire and flow to signal.
Detailed description of the invention
Below embodiments of the invention are elaborated; in order to the technological means making the present invention realize, feature and effect should be readily appreciated that; in conjunction with diagram, the embodiment of the present embodiment of the present invention and concrete operating process will be set forth, but protection scope of the present invention be not limited to following embodiment.
The technical parameter that one specific embodiment of the present invention realizes along high-frequency and high-voltage impulse power supply soon is as follows:
Maximum output voltage 10kV；
Rise/fall time is respectively less than 12ns；
Pulse width (100ns～direct current) continuously adjustabe；
The repetition rate of output pulse is more than 1MHz；
High-voltage pulse output ripple is less than 1%.
The fast outstanding representation along high-frequency and high-voltage impulse power supply device in pulse rise/fall time, pulse width, repetition rate according to the present invention, the pulse power institute being traditional is irrealizable.
With reference to shown in Fig. 1, the present invention provides a kind of fast along high voltage high frequency bursts power supply, including: power supply unit (1), high direct voltage unit (2), input pulse or modulation signal element (3), logic control element (4), concussion suppression and impedance matching unit (5), pre-driver and isolated location (6), high-voltage pulse output unit (7)；Described high-voltage pulse output unit (7) includes the high-voltage switch gear MOSFET field effect transistor of series connection；Externally fed is changed into 5V, 12V, 24V galvanic current pressure by power supply unit 1, and 5V is that FPGA control logic circuit is powered, and 12V is that pre-driver circuitry is powered, and 24V is that DC high-voltage source is powered.24V direct current is converted and after voltage multiplying rectifier by described high direct voltage unit (2) through PWM, obtain 0～10kV continuously adjustabe high direct voltage, high voltage switch unit for constituting to described high-voltage switch gear MOSFET field effect transistor is powered, and the amplitude of described high direct voltage unit (2) output DC voltage is equal to the described fast amplitude exporting pulse along high-frequency and high-voltage impulse power supply.
Logic control element 4 is by input pulse or modulates external pulse or the modulation signal 3 that signal element 3 inputs, or external modulation signal and internal pulse signal are converted into the rising of high-voltage pulse output unit 7 high-voltage switch MOSFET field effect transistor, trailing edge control signal, to control the rising of high-voltage switch gear MOSFET field effect transistor, trailing edge on or off.In order to ensure the work of the normal reliable of circuit, this control signal must assure that rising, trailing edge high-voltage switch gear MOSFET field effect transistor can not simultaneously turn on.Logic control element 4 is realized by digital logic gate, and internal pulse signal is also produced by this partial circuit, and the internal switching with external pulse signal is realized by permutator.The digital gate circuit of logic control element 4 is realized by FPGA, utilizes the feature able to programme of FPGA simultaneously, and internal pulse signal is also produced by this partial circuit, and the internal switching with external pulse signal is switched by permutator.
Shaking and suppress and the electric routing resistance of impedance matching unit 5, inductance and electric capacity composition, surge time in circuit because of the concussion of ghost effect generation, contactor is suppressed, the high-voltage switch gear that elimination non-control signal causes misleads.Simultaneously by adjusting parameter and the series-parallel system of these elements in circuit, it is achieved the impedance matching between the driving of control logic circuit, prime, high-voltage switch gear, load, meet the power demand of drive circuit and improve the speed of switch.
With reference to Fig. 2, pre-driver is identical with isolated location 6 rising edge and trailing edge low pressure pre-driver circuitry, the rising, the trailing edge control signal that are mainly exported by logic control element 4 carry out power and waveform conversion, with the voltage and current demand of satisfied driving high-voltage switch gear MOSFET field effect transistor.Prime drives and is mainly made up of with high-power MOSFET tube Q1 the plug-type driving of bipolar transistor, and this circuit is to controlling current spikes, power attenuation effectively, and the junction capacity of bipolar transistor is little simultaneously, is conducive to raising switching speed.Owing to the charge/discharge rates of the grid input capacitance of MOSFET pipe decides its switching speed, this just requires that gate driver circuit must be able to output instantaneous large-current and has the driving pulse of relatively fast rise time.In circuit, D1 is the accelerating diode of high-power MOSFET tube Q1 conducting, and R4 resistance is in order to improve the turn-off speed of Q1.The junction capacity of inductance L1 and high-power MOSFET tube Q1, it is followed by the pulse waveform conversion function that the impedance of load pulse transformator collectively forms, the driving pulse that pre-driver circuit exports is made to have peak starting voltage value of higher moment, coordinate the connection impedance reducing grid, instantaneous large-current is provided, thus accelerating its conducting for high-voltage switch gear MOSFET field effect transistor.By adjusting circuit parameter, in pulse transformer outfan (grid of high-voltage switch gear MOSFET field effect transistor) actual measurement to as it is shown on figure 3, what pre-driver circuit exported as seen from Figure 3 is have peak starting voltage value of higher moment ideal fast along drive waveforms.
As it is shown in fig. 7, the high voltage switch circuit being made up of high-voltage switch gear MOSFET field effect transistor device, it is identical with parameter that high-pressure side rising edge forms components and parts with trailing edge on-off circuit.When, after high-pressure side rising edge switch conduction, outfan will be connected to power end, output HIGH voltage, form high-voltage pulse forward position (rising edge of output high-voltage pulse)；When, after trailing edge switch conduction, outfan will be connected to ground, export low-voltage, form high-voltage pulse tailing edge (trailing edge of output high-voltage pulse).When actually used, only to use single rising edge or trailing edge as required, constitute boosting or blood pressure lowering soon along high-voltage pulse.The output pulse pulse transformer that controls of pre-driver and isolated location 6 coupled to the grid of high-voltage switch gear MOSFET field effect transistor, this coupled modes, both can realize the independence to each high-voltage switch gear MOSFET field effect transistor to drive, low-pressure side and on high-tension side electric isolution can have been realized again.The size of this partial circuit size according to output pulse amplitude and selected MOSFET field effect transistor pressure voltage, it is determined that the number of MOSFET field effect transistor series connection, each high-voltage switch gear MOSFET field effect transistor bias voltage is produced by high-voltage capacitance dividing potential drop.Selecting STF3NK100Z field effect transistor in this embodiment, its pressure voltage is 1000V, and when needing the amplitude pulse of output 6kV, rising edge needs 6 STF3NK100Z field effect transistor to connect with trailing edge on-off circuit.When exporting the amplitude pulse of 10kV, 10 STF3NK100Z field effect transistor are only needed to connect.
The work process of the present invention is as follows:
24V supply voltage after PWM conversion and voltage multiplying rectifier, is obtained the continuously adjustable high direct voltage of 0～10kV, and positive pole is connected with rising edge high-voltage switch gear MOSFET field effect transistor by high direct voltage unit 2.When the calibration pulse being externally introduced, modulation signal or internal pulse signal are input to logic control element 4 circuit being made up of FPGA, the rising edge of input signal is converted into the rising edge high voltage switch circuit control signal of one fixed width by this circuit, control the conducting of rising edge high-voltage switch gear MOSFET field effect transistor, outfan is made to be connected to the positive terminal of high direct voltage unit 2, form high-voltage pulse forward position (rising edge of output high-voltage pulse), output HIGH voltage, and remain to the conducting of trailing edge switch.When inputting signal and becoming low level, this signal trailing edge is converted into the trailing edge high voltage switch circuit control signal of one fixed width by logic control element 4 circuit, control the conducting of trailing edge high-voltage switch gear MOSFET field effect transistor, form high-voltage pulse tailing edge (trailing edge of output high-voltage pulse), make outfan be connected to ground, and be always maintained at the conducting of next rising edge switch.So in rise and fall along under the control of control signal, rise and fall turn in turn along high-voltage switch gear MOSFET field effect transistor, make outfan be connected to positive pole or the ground of high-voltage power supply in turn, the high-voltage pulse of output one fixed width and amplitude.Circuit have employed concussion suppress and impedance matching circuit, it is combined with the ideal fast along drive pulse waveform of peak starting voltage value of higher moment, both the suppression to interference can have been realized, the switching speed of high-voltage switch gear MOSFET field effect transistor can be improved again, ensure that the quickly errorless conducting of high-voltage switch gear MOSFET field effect transistor and shutoff, thus output is fast along hf and hv pulse.
In the embodiment of the present invention, the high pressure pulsewidth of drive circuit output, frequency are consistent with the pulse signal of input, only postpone about 120ns.Fast along the dutycycle of hf and hv pulse waveform, amplitude and frequency continuously adjustabe.Fig. 5 show measured result, and High voltage output adopts dividing potential drop test, and the rising and falling edges time of output high-voltage pulse is respectively less than 12ns.
In describing the invention, it will be appreciated that, term " " center ", " up and down ", " left and right ", " thickness ", " level " etc. instruction orientation or position relationship be based on orientation shown in the drawings or position relationship; be for only for ease of description the present invention and simplify describe; rather than instruction or imply indication device or element must have specific orientation, with specific azimuth configuration and operation, be therefore not considered as limiting the invention.
Additionally, term " first ", " second " are only for descriptive purposes, and it is not intended that indicate or imply relative importance or the implicit quantity indicating indicated technical characteristic.Thus, define " first ", the feature of " second " can express or implicitly include at least one this feature.In describing the invention, " multiple " are meant that at least two, for instance two, three etc., unless otherwise expressly limited specifically.
In the present invention, unless otherwise clearly defined and limited, the term such as term " installation ", " being connected ", " connection ", " fixing " should be interpreted broadly, for instance, it is possible to it is fixing connection, it is also possible to be removably connect, or integral；Can be mechanically connected, it is also possible to be electrical connection；Can be joined directly together, it is also possible to be indirectly connected to by intermediary, it is possible to be connection or the interaction relationship of two elements of two element internals, unless otherwise clear and definite restriction.For the ordinary skill in the art, it is possible to understand above-mentioned term concrete meaning in the present invention as the case may be.
Claims (6)
1. fast along a high-frequency and high-voltage impulse power supply, including power supply unit (1), high direct voltage unit (2), input pulse or modulation signal element (3), logic control element (4), concussion suppression and impedance matching unit (5), pre-driver and isolated location (6), high-voltage pulse output unit (7)；Described high-voltage pulse output unit (7) includes the high-voltage switch gear MOSFET field effect transistor of series connection；External input power is respectively converted into 5V, 12V, 24V constant voltage dc source by said supply unit (1), for powering to other each unit described；Described high direct voltage unit (2) is for converting 24V direct current and after voltage multiplying rectifier through PWM, obtain 0～10kV continuously adjustabe high direct voltage, high voltage switch unit for constituting to described high-voltage switch gear MOSFET field effect transistor is powered, and the amplitude of described high direct voltage unit (2) output DC voltage is equal to the described fast amplitude exporting pulse along high-frequency and high-voltage impulse power supply；Described input pulse or modulation signal element (3) are the calibration pulse being introduced from outside into or modulation signal；It is characterized in that:
Described logic control element (4) for being converted into rise/fall along control signal by input pulse or modulation signal element (3) pulse signal that inputs；
The rise/fall that logic control element (4) is exported by described pre-driver and isolated location (6) carries out power and waveform conversion along control signal, being converted into the high-voltage switch gear MOSFET field effect transistor conducting controlling described high-voltage pulse output unit (7) and the rise/fall turned off along control signal, described rise/fall is the fast along drive waveforms of peak starting voltage value of high moment along control signal；
Described concussion suppresses and impedance matching unit (5) is that the concussion including RLC series-parallel circuit suppresses unit and impedance matching unit, described concussion suppresses unit for preventing misleading of high-voltage switch gear MOSFET field effect transistor, and eliminates the shake of ghost effect generation self-oscillation and High voltage output pulse between pulse switch and pre-driver circuitry；The described impedance matching unit impedance matching for realizing between the internal resistance adjustment of high voltage power supply, on-off circuit and load, reduces the impact on switching speed of the impedance operator difference because of load and on-off circuit；
The driving pulse of described high-voltage switch gear MOSFET fet gate has the pulse of peak starting voltage value of high moment.
2. a kind of fast along high-frequency and high-voltage impulse power supply as claimed in claim 1, it is characterized in that: described fast be the rising edge of output high-voltage pulse along high-voltage pulse and the trailing edge time is respectively less than 12ns, or only use single rising edge or trailing edge as required, constitute boosting or move back pressure soon along high-voltage pulse.
3. a kind of fast along high-frequency and high-voltage impulse power supply as claimed in claim 1, it is characterized in that: described logic control element (4) is converted into the rise/fall of high voltage switch unit along control signal, then is individually separated controlling the turn-on and turn-off of high-voltage switch gear MOSFET field effect transistor.
4. a kind of fast along high-frequency and high-voltage impulse power supply as claimed in claim 1, it is characterized in that: described high-voltage pulse output unit (7) includes the high-voltage switch gear MOSFET field effect transistor of series connection, the bias voltage of described MOSFET pipe is produced by high-voltage capacitance dividing potential drop, and the grid of each high-voltage switch gear MOSFET field effect transistor independently drives through Isolated Pulse Transformer.Be conducive to the increase and decrease of series connection progression.
5. a kind of fast along high-frequency and high-voltage impulse power supply as claimed in claim 1, it is characterized in that: described output high voltage pulse waveform is consistent with input signal, namely export the pulsewidth of high-voltage pulse, frequency changes with input signal intensity, and output high-voltage pulse amplitude needs 0～10kV continuously adjustabe according to load.
6. a kind of fast along high-frequency and high-voltage impulse power supply as claimed in claim 1, it is characterized in that: described pre-driver and isolated location (6) including: the plug-type drive circuit of bipolar transistor, high-power MOSFET tube Q1, accelerating diode D1, described accelerating diode D1 positive pole is connected with the grid of high-power MOSFET tube Q1, the resistance R4 being also improved high-power MOSFET tube Q1 turn-off speed is connected between grid and ground, is in series with inductance L1 between source electrode and the ground of high-power MOSFET tube Q1.
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| CN106340804A (en) * | 2016-11-09 | 2017-01-18 | 苏州圣昱激光测量技术有限公司 | Driving source structure of short-pulse heavy-current semiconductor laser for laser scanning |
| CN107040245A (en) * | 2017-05-03 | 2017-08-11 | 深圳市硕亚科技有限公司 | Kiloampere heavy current pulse signal generation device and DIDT test equipments |
| CN107171542A (en) * | 2017-07-02 | 2017-09-15 | 中国航空工业集团公司雷华电子技术研究所 | A kind of high voltage power supply converter anti-jamming circuit |
| CN107356937A (en) * | 2017-08-25 | 2017-11-17 | 长春德信光电技术有限公司 | A kind of walking robot collision warning device based on Laser Detection Technique |
| CN107528455A (en) * | 2017-10-16 | 2017-12-29 | 科棣姆（上海）电源科技有限公司 | A kind of drive circuit for maintaining intermediate frequency plasma power supply metal-oxide-semiconductor electric voltage equalization |
| CN107797085A (en) * | 2016-08-31 | 2018-03-13 | 北京普源精电科技有限公司 | Soon along signal control circuit and its Active Front End, test system |
| CN108183623A (en) * | 2017-12-06 | 2018-06-19 | 山东航天电子技术研究所 | A kind of fast rising pulse source of high pressure |
| CN108712162A (en) * | 2018-04-27 | 2018-10-26 | 湖北大学 | A kind of avalanche transistor connection in series-parallel high pressure is soon along switching circuit |
| CN108988830A (en) * | 2018-08-03 | 2018-12-11 | 中国电子科技集团公司第二十四研究所 | A kind of pulse signal generation circuit of programmable edge time |
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| CN107797085A (en) * | 2016-08-31 | 2018-03-13 | 北京普源精电科技有限公司 | Soon along signal control circuit and its Active Front End, test system |
| CN106340804A (en) * | 2016-11-09 | 2017-01-18 | 苏州圣昱激光测量技术有限公司 | Driving source structure of short-pulse heavy-current semiconductor laser for laser scanning |
| CN106340804B (en) * | 2016-11-09 | 2023-10-31 | 苏州圣昱激光测量技术有限公司 | Short pulse high current semiconductor laser driving source structure for laser scanning |
| CN107040245A (en) * | 2017-05-03 | 2017-08-11 | 深圳市硕亚科技有限公司 | Kiloampere heavy current pulse signal generation device and DIDT test equipments |
| CN107040245B (en) * | 2017-05-03 | 2023-08-22 | 深圳市硕亚科技有限公司 | Kiloamp high-current pulse signal generating device and DIDT test equipment |
| CN107171542A (en) * | 2017-07-02 | 2017-09-15 | 中国航空工业集团公司雷华电子技术研究所 | A kind of high voltage power supply converter anti-jamming circuit |
| CN107356937A (en) * | 2017-08-25 | 2017-11-17 | 长春德信光电技术有限公司 | A kind of walking robot collision warning device based on Laser Detection Technique |
| CN107528455A (en) * | 2017-10-16 | 2017-12-29 | 科棣姆（上海）电源科技有限公司 | A kind of drive circuit for maintaining intermediate frequency plasma power supply metal-oxide-semiconductor electric voltage equalization |
| CN108183623A (en) * | 2017-12-06 | 2018-06-19 | 山东航天电子技术研究所 | A kind of fast rising pulse source of high pressure |
| CN108712162B (en) * | 2018-04-27 | 2022-05-06 | 湖北大学 | Avalanche transistor series-parallel high-voltage fast-edge switching circuit |
| CN108712162A (en) * | 2018-04-27 | 2018-10-26 | 湖北大学 | A kind of avalanche transistor connection in series-parallel high pressure is soon along switching circuit |
| CN108988830A (en) * | 2018-08-03 | 2018-12-11 | 中国电子科技集团公司第二十四研究所 | A kind of pulse signal generation circuit of programmable edge time |
| CN108988830B (en) * | 2018-08-03 | 2022-05-03 | 中国电子科技集团公司第二十四研究所 | Pulse signal generating circuit capable of programming edge time |
| CN109039140A (en) * | 2018-10-22 | 2018-12-18 | 中国工程物理研究院应用电子学研究所 | A kind of compact high-voltage switch gear component |
| CN109831186A (en) * | 2018-12-27 | 2019-05-31 | 西南技术物理研究所 | A kind of electric-optically Q-switched circuit of micro integrated low-power consumption |
| CN113497558A (en) * | 2020-04-07 | 2021-10-12 | 新唐科技股份有限公司 | Voltage stabilization control system and method thereof |
| CN112600457A (en) * | 2020-12-15 | 2021-04-02 | 中国工程物理研究院激光聚变研究中心 | Compact solid-state bipolar fast-edge nanosecond pulse power supply system and operation method |
| CN112600457B (en) * | 2020-12-15 | 2022-04-12 | 中国工程物理研究院激光聚变研究中心 | Compact solid-state bipolar fast-edge nanosecond pulse power supply system and operation method |
| CN112583295A (en) * | 2020-12-15 | 2021-03-30 | 中国工程物理研究院激光聚变研究中心 | High repetition frequency and high voltage nanosecond pulse driving power supply system and operation method |
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