CN107222124B - High-voltage pulse power supply for generating plasma by liquid phase discharge - Google Patents
High-voltage pulse power supply for generating plasma by liquid phase discharge Download PDFInfo
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- CN107222124B CN107222124B CN201710572915.3A CN201710572915A CN107222124B CN 107222124 B CN107222124 B CN 107222124B CN 201710572915 A CN201710572915 A CN 201710572915A CN 107222124 B CN107222124 B CN 107222124B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
- H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention provides a high-voltage pulse power supply for generating plasmas by liquid phase discharge, which comprises a direct-current high-voltage generation circuit, a high-voltage inversion main circuit and a high-voltage inversion control circuit, wherein the output end of a high-voltage source of the direct-current high-voltage generation circuit is connected with the power input end of the high-voltage inversion main circuit, the high-voltage inversion control circuit is connected with the control end of the high-voltage inversion main circuit, and a power switch device in the high-voltage inversion main circuit is formed by connecting a plurality of power IGBT (insulated gate bipolar transistors) in series. The invention has the advantages of long service life, stability, low noise and the like.
Description
Technical Field
The invention relates to a liquid phase discharge technology and a high-voltage power supply technology, in particular to a high-voltage pulse power supply for generating plasmas by liquid phase discharge.
Background
Research has long begun in foreign pulse source technology, where high voltage fast pulse technology originates from the need for nuclear physics experiments, radar, radio communication technology, and computer technology development. At present, high-voltage fast pulse sources are widely applied to various fields. Because of different characteristics of application objects, the requirements on pulse sources are different, for example, in the nanosecond high-voltage fast pulse source commonly used in a laser system, two main research directions are: the first is that the electric vacuum device is represented by secondary electron emission tube, discharge gap switch, trigger tube, hydrogen brake tube, etc., it is mainly studied how to increase the switching speed of the electric vacuum device, reduce the trigger shaking, and study the high-voltage and high-speed driving circuit matched with it. And secondly, solid devices represented by avalanche transistors, high-voltage field effect transistors and the like are used for researching a high-power high-speed high-voltage semiconductor solid switch and a high-speed high-voltage array circuit matched with the high-power high-speed high-voltage semiconductor solid switch.
Wherein, the secondary electron emission tube advantage is: the repetition frequency is high, the trigger delay and the shaking are small, but the pulse output voltage amplitude is low (only hundreds of volts), the service life is short, the instability is high, and the noise is large; discharge gap switches such as spark gaps tend to produce large pulse amplitudes (above kilovolts) and short rise times (sub-nanoseconds), but have low repetition rates and large sloshing; the working voltage of the trigger tube can reach tens of kilovolts, and the disadvantage is that a higher trigger pulse voltage (almost an order of magnitude with the anode voltage) is required and the shaking is larger; the operating voltage range of thyristors is large (hundreds of volts and tens of kilovolts), the switching speed is fast (a few nanoseconds), the repetition frequency is high, and the disadvantage is that the shaking is large.
With the development of semiconductor technology, semiconductor switches such as avalanche transistors in the 50 s began to enter the ns-class technology field. The experiment of Chakera finds that the current establishing time of a few avalanche transistors is very small, namely about 1ns, and a pulse generator with the width of 1ns is developed according to the current establishing time, but the limitation of a semiconductor switch is obvious: the single tube has lower working voltage. Thus, avalanche transistor MARX circuit research has been initiated from 60-70 s to increase output pulse amplitude and speed up the leading edge. For example, bell et al began to study avalanche tube MARX circuits, which had been used to output high-speed pulses of several kilovolts and a leading edge of several nanoseconds in the 70 s, and Davis et al (1979) made a pulse source of 4ns leading edge of 3.3KV using an avalanche tube. The solid switch has the advantages of high repetition rate, long service life, little shaking and the like, so that the avalanche transistor pulse source has great development and replaces an electric vacuum tube in part of fields. Although the current avalanche transistor pulse source can achieve high-speed high-voltage narrow pulses with the amplitude of tens of kilovolts, the leading edge picosecond level and the pulse width of a few nanoseconds, the current driving capability of the device is poor, and the output pulse width is narrow, so that the application of the device is limited. After 70 years, the appearance of power MOSFET changes this situation because the single tube power is much larger than avalanche tube. The prior high-voltage metal oxide power field effect transistor with single tube current (tens of amperes), higher drain-source voltage (reaching kilovolts), small on-resistance (ohm magnitude) and faster on-time (nanosecond magnitude) adopts avalanche transistor driving to greatly reduce the front edge to a plurality of nanoseconds, and the series connection and the parallel connection can enlarge the pulse amplitude and the pulse width, so that the switching speed is further improved after the overdrive circuit is designed.
The research of domestic high-voltage fast pulse sources is in a development stage, and solid avalanche transistors are used for high-voltage pulse sources with the amplitude of 5KV for nanoseconds by a western light machine, but the pulse width is narrow and the voltage amplitude is insufficient. The electro-optical crystal is driven by MOSFET tubes of Tianjin university to produce pulses with the pulse width of 120 ns-1200 ns, the amplitude of 0.6-3 KV, the leading edge of 5ns and the frequency of 1 HZ-1000 HZ.
Disclosure of Invention
The invention aims at: aiming at the problems existing in the prior art, the high-voltage pulse power supply for generating plasma by liquid phase discharge is provided, and the problems of short service life, instability, high noise and lower single-tube working voltage of the existing high-voltage fast pulse power supply are solved.
The invention aims at realizing the following technical scheme:
the high-voltage pulse power supply for generating plasma by liquid phase discharge is characterized by comprising a direct-current high-voltage generation circuit, a high-voltage inversion main circuit and a high-voltage inversion control circuit, wherein the high-voltage source output end of the direct-current high-voltage generation circuit is connected with the power input end of the high-voltage inversion main circuit, the high-voltage inversion control circuit is connected with the control end of the high-voltage inversion main circuit, and a power switching device in the high-voltage inversion main circuit is formed by connecting a plurality of power IGBT (insulated gate bipolar transistors) in series.
Preferably, the direct current high voltage generating circuit comprises a voltage regulating rectifying circuit, a low voltage inverter circuit and a pulse boosting circuit which are sequentially connected, the voltage regulating rectifying circuit comprises a power frequency power supply and a phase shifter, the low voltage inverter circuit comprises an isolation transformer, a trigger and a thyristor, and the pulse boosting circuit comprises a rectifying output circuit.
Preferably, the low-voltage inverter circuit is a full-bridge inverter circuit, and the full-bridge inverter circuit controls the two pairs of switching tubes respectively through two groups of driving pulses with opposite phases.
Preferably, the full-bridge inverter circuit comprises a resistor R1, a resistor R2, a switching tube V1, a switching tube V2, a switching tube V3 and a switching tube V4, wherein the resistor R1 is sequentially connected with the switching tube V1, the switching tube V2 and the resistor R2 in series, one end of the switching tube V3 is connected between the resistor R1 and the switching tube V1, and the other end of the switching tube V3 is connected between the resistor R2 and the switching tube V2 after being connected with the switching tube V4 in series.
Preferably, the high-voltage inversion main circuit comprises a multistage charge-discharge serial power switch tube output circuit, and the multistage charge-discharge serial power switch tube output circuit comprises a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R6, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a capacitor C5, a capacitor C6 and a plurality of power IGBT tubes; the resistor R5 is connected with the capacitor C5, the capacitor C6 and the resistor R6 in series; one end of the resistor R3 is connected between the resistor R5 and the capacitor C5, the other end of the resistor R3 is sequentially connected with the capacitor C3, the capacitor C4 and the resistor R4, and the other end of the resistor R4 is connected between the capacitor C6 and the resistor R6; one end of the resistor R1 is connected between the resistor R3 and the capacitor C3, the other end of the resistor R1 is sequentially connected with the capacitor C1, the capacitor C2 and the resistor R2, and the other end of the resistor R2 is connected between the capacitor C4 and the resistor R4; after being connected in series in sequence, one end of the power IGBT tube is connected between the resistor R1 and the capacitor C1, and the other end of the power IGBT tube is connected between the capacitor C2 and the resistor R2.
Preferably, the gate electrode of each power IGBT tube is led out of the tap.
Preferably, the tap string is connected with a fuse.
Compared with the prior art, the invention has the following advantages:
1. the low-voltage inverter circuit selects a full-bridge inverter circuit as a main form of low-voltage inversion, and the full-bridge inverter circuit has the advantages that the highest applied voltage is input voltage when the power switch tube is in a steady state, and the amplitude of output voltage can be effectively improved.
2. The low-voltage inverter circuit uses a power IGBT as a switching tube, namely an insulating bipolar transistor. The voltage control device is a unipolar voltage control device and has the remarkable characteristics of high switching speed, good high-frequency performance, high input impedance, simple driving circuit, excellent thermal stability, no secondary breakdown problem, wide safe working area, high transconductance linear energy and the like. The working voltage of the current power IGBT switching tube can reach 3KV, and the inverter circuit with the direct current 300V voltage can be completely met.
3. The pulse step-up transformer is an indispensable key component of the whole high-voltage pulse power supply, and has the functions of switching and isolation from low voltage to high voltage, and the synchronous operation of each series IGBT in the high-voltage inversion main circuit is ensured. The magnetic circuit for realizing magnetic coupling in the pulse boosting transformer is not a silicon steel sheet of a common transformer, and an iron-nickel soft magnetic alloy material with higher magnetic conductivity is adopted to obtain larger excitation inductance and improve energy transmission efficiency.
4. The high-voltage inversion control circuit independently makes a set of parallel resonant converter controllers. The controller comprises an overload protection function, an isolator, a pulse generator, a dead zone adjusting circuit and a driving circuit. The main functions completed by the controller are as follows: isolating the high-voltage circuit from the low-voltage circuit, completing the control of the ultra-low voltage to the high-voltage circuit, and setting an overload protection function; setting a dead zone adjusting function; the resonant frequency is tracked, ensuring maximum power output.
Drawings
FIG. 1 is an overall structure diagram of a high voltage pulse power supply for liquid phase discharge plasma;
FIG. 2 is a schematic diagram of a full-bridge inverter circuit of a high-voltage pulse power supply for liquid phase discharge plasma;
FIG. 3 is a series power switching tube output circuit of multistage charge and discharge of a high voltage pulse power supply of a liquid phase discharge plasma;
fig. 4 is a high voltage control loop driving circuit of a high voltage pulse power supply of a liquid phase discharge plasma.
Detailed Description
The invention will now be described in detail with reference to the drawings and specific examples.
Examples
The invention provides a high-voltage pulse power supply for generating plasma by liquid phase discharge, which mainly comprises three parts as shown in figure 1:
the first part, the direct current high voltage generating circuit, this part mainly includes voltage regulation rectifier circuit, low voltage inverter circuit and pulse boost circuit three part circuit composition, its main function is to provide adjustable high voltage source for entire system. The voltage regulating rectifying circuit comprises a power frequency power supply and a phase shifter, the low-voltage inverter circuit comprises an isolation transformer, a trigger and a thyristor, and the pulse boosting circuit comprises a rectifying output circuit. The controllable silicon in the voltage regulating circuit of the direct current high voltage generating circuit is a core component, and the conduction angle of the controllable silicon is changed by using a variable resistor, so that the input sine wave voltage can be regulated.
And the second part, the high-voltage inversion main circuit and the key link of the power supply main circuit, have direct influence on the technical index and performance of the whole high-voltage pulse power supply due to the structure and device selection. The power switch device in the high-voltage inversion main circuit adopts a power IGBT tube with good performance and adopts a series connection mode. A high performance protection device in the form of a diode is used with a Transient Voltage Suppressor (TVS).
And the third part, the high-voltage inversion control circuit, mainly comprises a PWM control circuit and a pulse transformer isolation drive. The high-voltage source output end of the direct-current high-voltage generation circuit is connected with the power input end of the high-voltage inversion main circuit, and the high-voltage inversion control circuit is connected with the control end of the high-voltage inversion main circuit.
The principle of the high-voltage pulse power supply is as follows: 220V power frequency alternating current is input into a voltage regulating circuit, the regulated alternating current power supply is rectified into direct current by a rectifying circuit and then is sent into a full-bridge type low-voltage inverter circuit, and the output pulse voltage is sent to a pulse boosting transformer by controlling the on and off of a power switch tube. The high-voltage pulse obtained from the secondary side of the pulse step-up transformer is rectified into direct-current high voltage, and then the direct-current high voltage is sent into a high-voltage half-bridge inverter circuit, and the direct-current high-voltage half-bridge inverter circuit is converted into the required medium-frequency steep-front pulse high voltage through the alternate inversion action of a power switch tube.
The parts involved are specifically described as follows:
full-bridge inverter circuit
The full-bridge inverter circuit is shown in fig. 2 and comprises a resistor R1, a resistor R2, a switching tube V1, a switching tube V2, a switching tube V3 and a switching tube V4. The resistor R1 is sequentially connected with the switching tube V1, the switching tube V2 and the resistor R2 in series. One end of the switching tube V3 is connected between the resistor R1 and the switching tube V1, and the other end is connected in series with the switching tube V4 and then is connected between the resistor R2 and the switching tube V2. The full-bridge inverter circuit of the invention needs two groups of driving pulses with opposite phases to respectively control two pairs of switching tubes, namely V1 and V4 are simultaneously switched on and off, and V2 and V3 are simultaneously switched on and off. When V1 and V4 are simultaneously conducted, V2 and V3 are cut off, and the primary side voltage of the pulse boosting transformer is Ud with positive left and negative right; on the contrary, when V2 and V3 are simultaneously conducted, V1 and V4 are cut off, and the primary side voltage of the pulse boosting transformer is Ud with positive right and negative left. The switch tube end voltage and voltage spike are similar to half-bridge circuits in that four switch tubes are all turned off in dead time. The current spike when the switching tube is just conducted is similar to that of a half-bridge circuit. The full-bridge inverter circuit has the advantage that the highest applied voltage is the input voltage when the power switch tube is steady.
Multistage charge-discharge series power switch circuit
As shown in fig. 3, the multistage charge-discharge serial power switch tube output circuit includes a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R6, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a capacitor C5, a capacitor C6, and a plurality of power IGBT tubes. The resistor R5 is connected in series with the capacitor C5, the capacitor C6 and the resistor R6. One end of the resistor R3 is connected between the resistor R5 and the capacitor C5, the other end of the resistor R3 is sequentially connected with the capacitor C3, the capacitor C4 and the resistor R4, and the other end of the resistor R4 is connected between the capacitor C6 and the resistor R6. One end of the resistor R1 is connected between the resistor R3 and the capacitor C3, the other end of the resistor R1 is sequentially connected with the capacitor C1, the capacitor C2 and the resistor R2, and the other end of the resistor R2 is connected between the capacitor C4 and the resistor R4. After a plurality of power IGBT pipes are connected in series in sequence, one end of each power IGBT pipe is connected between the resistor R1 and the capacitor C1, and the other end of each power IGBT pipe is connected between the capacitor C2 and the resistor R2. The IGBT switch of the power switch device selects the high-speed MG400Q1US41, namely an insulated gate bipolar transistor, is a compound full-control voltage-driven power semiconductor device consisting of a BJT (bipolar transistor) and a MOS (insulated gate field effect transistor), and has the advantages of high input impedance of the MOSFET and low conduction voltage drop of the GTR. The GTR saturation voltage is reduced, the current carrying density is high, but the driving current is high; the MOSFET has small driving power, high switching speed, large conduction voltage drop and small current carrying density. The IGBT combines the advantages of both, and the drive power is small and the saturation voltage is reduced. The breakdown voltage of the IGBT can reach 1200V, the collector saturation current can reach 1500A, and the working frequency can reach 20KHZ.
In the working process, a multi-stage capacitor charge-discharge mode is adopted, so that multi-layer protection is realized. The power switch device adopts a serial connection mode to obtain the required high voltage, and adopts a multi-tap mode to obtain multi-stage adjustable voltage, so that the invention is suitable for treatment of various water qualities. The tap string is provided with a fuse.
High-voltage control loop driving circuit
As shown in FIG. 4, the pulse modulator of the high voltage control circuit adopts MC33066, which is a high-performance resonant converter control chip manufactured by MOOROCA company. The IC integrates a variable frequency oscillator, an under-voltage lock, a fault shut-off, a soft start, a single pulse generator, a 5V reference generator, a high performance operational amplifier, and the like. And the control of the charging power supply is divided into an external remote control part and an internal local control part of the charger, the external control of the charger is completed by a Siemens PLC, the internal control board of the charger is mainly designed around an integrated circuit MC33066, and the working frequency of the VFO can be determined by adjusting a potentiometer RP1 to change the output voltage of an operational amplifier in the MC33066 because the frequency of the charging power supply is fixed. The pulse output of MC33066 is controlled by the pulse output of MC33066 (In + ) The potential is high and low. MC33066 has an output when the 9 pin voltage is high and MC33066 has no output when the 9 pin voltage is low.
In the process of system debugging and analysis: firstly, in a voltage-regulating rectifying circuit, data acquisition and analysis are carried out, and a phase-shifting trigger and a switching device are controlled to obtain a stable sine waveform so as to prepare for the next step; secondly, debugging an IGBT control circuit, wherein the output effect of a pulse modulator in a high-voltage circuit is directly affected by the quality of signals provided by the control circuit, the output frequency is set at 10KHZ, and pulse waveforms are debugged; when the output amplitude is 30KV, the pulse frequency is 10KHZ, the rising edge of the high-voltage pulse reaches 100ns, and the minimum requirement of generating plasma by liquid phase discharge is met.
The foregoing description of the preferred embodiment of the invention is not intended to be limiting, but rather to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (5)
1. The high-voltage pulse power supply for generating plasma by liquid phase discharge is characterized by comprising a direct-current high-voltage generation circuit, a high-voltage inversion main circuit and a high-voltage inversion control circuit, wherein the high-voltage source output end of the direct-current high-voltage generation circuit is connected with the power input end of the high-voltage inversion main circuit, the high-voltage inversion control circuit is connected with the control end of the high-voltage inversion main circuit, and a power switching device in the high-voltage inversion main circuit is formed by connecting a plurality of power IGBT (insulated gate bipolar transistors) in series;
220V power frequency alternating current is input into a voltage regulating circuit, the regulated alternating current power supply is rectified into direct current by a rectifying circuit and then is sent into a full-bridge low-voltage inverter circuit, and the output pulse voltage is sent to a pulse boosting transformer by controlling the on and off of a power switching tube; the high-voltage pulse obtained from the secondary side of the pulse step-up transformer is rectified into direct-current high voltage, and then the direct-current high voltage is sent into a high-voltage half-bridge inverter circuit, and the direct-current high voltage is converted into the required medium-frequency steep-front pulse high voltage through the alternate inversion action of a power switch tube;
the high-voltage inversion main circuit comprises a multistage charge-discharge serial power switch tube output circuit, wherein the multistage charge-discharge serial power switch tube output circuit comprises a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R6, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a capacitor C5, a capacitor C6 and a plurality of power IGBT tubes; the resistor R5 is connected with the capacitor C5, the capacitor C6 and the resistor R6 in series; one end of the resistor R3 is connected between the resistor R5 and the capacitor C5, the other end of the resistor R3 is sequentially connected with the capacitor C3, the capacitor C4 and the resistor R4, and the other end of the resistor R4 is connected between the capacitor C6 and the resistor R6; one end of the resistor R1 is connected between the resistor R3 and the capacitor C3, the other end of the resistor R1 is sequentially connected with the capacitor C1, the capacitor C2 and the resistor R2, and the other end of the resistor R2 is connected between the capacitor C4 and the resistor R4; after a plurality of power IGBT tubes are sequentially connected in series, one end of each power IGBT tube is connected between the resistor R1 and the capacitor C1, and the other end of each power IGBT tube is connected between the capacitor C2 and the resistor R2; in the working process, a multi-stage capacitor charge-discharge mode is adopted, a power switch device is in a serial connection mode to obtain required high voltage, and a multi-tap mode is adopted to obtain multi-stage adjustable voltage so as to adapt to treatment of various water qualities.
2. The high-voltage pulse power supply for generating plasma by liquid phase discharge according to claim 1, wherein the direct-current high-voltage generation circuit comprises a voltage-regulating rectifying circuit, a low-voltage inverter circuit and a pulse boosting circuit which are sequentially connected, the voltage-regulating rectifying circuit comprises a power frequency power supply and a phase shifter, and the pulse boosting circuit comprises a rectifying output circuit.
3. The high-voltage pulse power supply for generating plasma by liquid phase discharge according to claim 2, wherein the low-voltage inverter circuit is a full-bridge inverter circuit, and the full-bridge inverter circuit controls two pairs of switching tubes respectively by two groups of driving pulses with opposite phases.
4. A high voltage pulse power supply for generating plasma by liquid phase discharge according to claim 3, wherein the full bridge inverter circuit comprises a resistor R1, a resistor R2, a switching tube V1, a switching tube V2, a switching tube V3 and a switching tube V4, the resistor R1 is sequentially connected in series with the switching tube V1, the switching tube V2 and the resistor R2, one end of the switching tube V3 is connected between the resistor R1 and the switching tube V1, and the other end is connected between the resistor R2 and the switching tube V2 after being connected in series with the switching tube V4.
5. A high voltage pulsed power supply for generating a plasma by liquid phase discharge according to claim 1, wherein said tap string is provided with a fuse.
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| CN113852265A (en) * | 2021-08-17 | 2021-12-28 | 北京无线电测量研究所 | Modulation switch |
| CN117596762B (en) * | 2024-01-18 | 2024-04-05 | 离享未来(德州)等离子科技有限公司 | Bipolar nanosecond pulse power supply for discharge plasma |
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| CN107222124A (en) | 2017-09-29 |
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