CN215834886U - Ultrahigh repetition frequency high-power laser light source - Google Patents
Ultrahigh repetition frequency high-power laser light source Download PDFInfo
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- CN215834886U CN215834886U CN202121467330.3U CN202121467330U CN215834886U CN 215834886 U CN215834886 U CN 215834886U CN 202121467330 U CN202121467330 U CN 202121467330U CN 215834886 U CN215834886 U CN 215834886U
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Abstract
The utility model aims to provide an ultrahigh repetition frequency high-power laser light source which is used for obtaining an ultrahigh frequency high-power semiconductor laser and comprises an input high voltage HV, a charging current-limiting resistor R1, a pulse current-limiting resistor R2, an energy-storing capacitor C1, a clamping diode D1, a semiconductor laser D2, a control switch K and a load semiconductor diode LD, wherein the HV is connected with one end of the C1 through R1 and R2 in sequence, the other end of the C1 is connected with the LD, one end of the K is connected between R1 and R2, the other end of the K is connected between the C1 and the LD through D1, the anode of the D2 is connected between the K and the cathode of the D1, and the cathode of the D2 is connected between the C1 and the LD The rise time is short, and an ultrahigh frequency high-speed large-current driving power supply is further obtained.
Description
Technical Field
The utility model belongs to the technical field of laser, and particularly relates to an ultrahigh repetition frequency high-power laser light source.
Background
The demand of ultrahigh frequency high power semiconductor laser is urgent in the fields of laser communication, laser radar, laser ranging and the like. In 2012, hayman researchers used an improved monostable trigger to generate narrow pulses, and amplified the narrow pulses to drive a fast switching MOSFET to obtain large-current narrow pulses; the power supply pulse current driving capability is 80A, the pulse rise time is 2.8ns, the pulse width is adjustable within the range of 5 ns-500 ns, and the repetition frequency can reach 200 kHz. When a semiconductor laser with a laser wavelength of 905nm was tested using this drive power supply, the peak power of the laser pulse reached 70W or more, but the repetition frequency was only 10 kHz.
In 2017, on the basis of carrying out analog simulation on a high-frequency modulation driving system by using OrCAD/PSpice, Changchun university finally develops a semiconductor laser high-frequency modulation system with the frequency of 40.02MHz, but the average modulation laser power is only 300 mW.
Aiming at the requirements of an ultrahigh repetition frequency 905nm laser, the key technical issues of a high-speed large-current pulse laser driving technology, an ultrahigh repetition frequency waveform control technology and the like need to be broken through to realize the laser output with the 905nm wave band frequency of more than 25MHz, the pulse width of 15ns and the peak power of more than 30W, and the ultrahigh repetition frequency 905nm laser source with advanced technology and stable work is provided for new product development.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide an ultrahigh repetition frequency high-power laser light source which is used for obtaining an ultrahigh frequency high-power semiconductor laser.
The technical scheme for solving the technical problems of the utility model is as follows: an ultrahigh repetition frequency high-power laser light source is characterized in that: the high-voltage high-power semiconductor laser device comprises an input high-voltage HV, a charging current-limiting resistor R1, a pulse current-limiting resistor R2, an energy-storage capacitor C1, a clamping diode D1, a semiconductor laser D2, a control switch K and a load semiconductor diode LD, wherein the input high-voltage HV sequentially passes through the charging current-limiting resistor R1 and the pulse current-limiting resistor R2 to be connected with one end of the energy-storage capacitor C1, the other end of the energy-storage capacitor C1 is connected with the load semiconductor diode LD, one end of the control switch K is connected between the charging current-limiting resistor R1 and the pulse current-limiting resistor R2, the other end of the control switch K is connected between the energy-storage capacitor C1 and the load semiconductor diode LD through a clamping diode D1, the negative electrode of the clamping diode D1 is close to the control switch K, the positive electrode of the clamping diode D1 is close to the energy-storage capacitor C1, the positive electrode of the semiconductor laser D2 is connected between the control switch K and the negative electrode of the clamping diode D1, and the cathode of the semiconductor laser D2 is connected between the energy storage capacitor C1 and the load semiconductor diode LD.
The system comprises a control switch K, and is characterized by further comprising a timing module and a driving module, wherein the timing module is used for controlling the on-time of the control switch K, the timing module is used for outputting timing signals, and the driving module controls the on-time of the control switch K according to the timing signals.
The time system module comprises a crystal oscillator and an FPGA, the crystal oscillator is used for providing a clock source, the FPGA is used for receiving the clock source, frequency multiplication is carried out on the clock source to generate a high-speed clock, the high-speed clock is subjected to frequency division according to set parameters, time system control output is carried out after frequency division is completed simultaneously, the signal output end of the crystal oscillator is connected with the signal input end of the FPGA, and the signal output end of the FPGA is connected with the signal input end of the driving module through an interface circuit.
The utility model has the beneficial effects that: the utility model adopts a capacitor discharge mode, takes a circuit switch as a core device, restricts the rise time and the peak power of the output pulse laser by the conduction time and the driving capability of the circuit switch, has simple circuit, high efficiency, small power consumption, large peak power and short rise time, and further obtains the ultrahigh frequency high speed large current driving power supply.
Drawings
Fig. 1 is a circuit schematic of the present invention.
FIG. 2 is a functional block diagram of a system module of the present invention.
FIG. 3 is a frequency chart of the present invention with a constant frequency continuous output.
FIG. 4 is a frequency plot of the output for a fixed frequency interval in the present invention.
FIG. 5 is a frequency chart of the cyclic output for multiple frequency mixing periods in the time-domain system of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in FIG. 1, the present invention comprises an input high voltage HV, a charging current limiting resistor R1, a pulse current limiting resistor R2, an energy storage capacitor C1, a clamp diode D1, a semiconductor laser D2, a control switch K and a load semiconductor diode LD, wherein the input high voltage HV is connected with one end of the energy storage capacitor C1 through the charging current limiting resistor R1 and the pulse current limiting resistor R2 in sequence, the other end of the energy storage capacitor C1 is connected with the load semiconductor diode LD, one end of the control switch K is connected between the charging current limiting resistor R1 and the pulse current limiting resistor R2, the other end of the control switch K is connected between the energy storage capacitor C1 and the load semiconductor diode LD through the clamp diode D1, the cathode of the clamp diode D1 is close to the control switch K, the anode of the clamp diode D1 is close to the energy storage capacitor C1, the anode of the semiconductor laser D2 is connected between the control switch K and the cathode of the clamp diode D1, and the cathode of the semiconductor laser D2 is connected between the energy storage capacitor C1 and the load semiconductor diode LD.
The system comprises a control switch K, and is characterized by further comprising a timing module and a driving module, wherein the timing module is used for controlling the on-time of the control switch K, the timing module is used for outputting timing signals, and the driving module controls the on-time of the control switch K according to the timing signals.
The time system module comprises a crystal oscillator and an FPGA, the crystal oscillator is used for providing a clock source, the FPGA is used for receiving the clock source, frequency multiplication is carried out on the clock source to generate a high-speed clock, the high-speed clock is subjected to frequency division according to set parameters, time system control output is carried out after frequency division is completed simultaneously, the signal output end of the crystal oscillator is connected with the signal input end of the FPGA, and the signal output end of the FPGA is connected with the signal input end of the driving module through an interface circuit.
Compared with a constant current source mode driving circuit, the power supply adopts a capacitance discharge mode and has the advantages of simple circuit, high efficiency, low power consumption, high peak power, short rise time and the like.
During charging, K is disconnected, high voltage HV charges C1 through R, and the voltage across C1 gradually increases. After the charging is completed, the voltage across C1 rises to HV, i.e., the voltage at node a is HV and the voltage at node B is approximately 0. After the charging is completed, when K is closed, the voltage drop at node a is 0 and the voltage drop at node B is-HV, so that a discharging pulse current flowing to node B is generated at D2.
By adopting the driving mode, the semiconductor laser driving circuit is flexible and practical, and the peak power, the pulse width and the repetition frequency of the output pulse laser can be conveniently adjusted by changing parameters such as HV, R, C1, R2 and the like. The higher the voltage of HV, the larger the capacitance of C1, the smaller the resistance of R2, the narrower the pulse width of the pulsed laser, and the smaller the resistance of R1, the higher the repetition frequency of the pulsed laser.
In this drive circuit, the control switch K is a core device whose on-time and drive capability restrict the rise time and peak power of the output pulse laser. The on-time of the circuit is required to be in nanosecond order, and the peak current is more than 14A. Based on experimental results, a high-speed high-power MOS tube of DEI company is selected, the peak current is 98A, the conduction time is 2ns, and the requirements of a driving circuit can be met.
The system needs to generate a high-precision, high-repetition-frequency and programmable laser emission time system signal, the laser emission repetition frequency is adjustable, and the time system output time length is adjustable according to program setting. Based on the requirement, the system adopts the FPGA as a core processing center, adopts an FPGA internal clock phase-locked loop to carry out frequency multiplication on an external high-precision crystal oscillator input clock, the frequency multiplication is carried out to obtain a high-speed clock, frequency division is carried out according to the requirement, and the required low-speed clock output is generated, wherein the schematic block diagram of the system module is shown in FIG. 2.
In fig. 2, crystal oscillator: providing high-precision clock source of this system
FPGA: and receiving a high-precision clock source, multiplying the frequency to generate a high-speed clock, dividing the frequency of the high-speed clock according to set parameters, and simultaneously performing time-controlled output after frequency division is completed.
An interface circuit: and (5) completing system level conversion during FPGA output.
And (3) communication control: and the RS422 serial port is adopted to complete the configuration of the output time system frequency parameter, the time interval time and the gating output parameter.
The system adopts the FPGA as a processing core, has flexible control mode and output and strong expandability, generates the following three output timing modes according to the requirements, and can be expanded according to the requirements subsequently.
As shown in fig. 3, the fixed frequency continuous output is that the FPGA outputs the clock after frequency multiplication according to the set division number, and the maximum output frequency does not exceed the maximum multiplication number of the FPGA. At present, the FPGA adopts SPARTAN 6 series FPGA of Xilinx company, and the output frequency F1 does not exceed 100 MHz;
as shown in fig. 4, the fixed frequency interval output is a time system control enable output that is added to the fixed frequency continuous output, and the time system signal is not output within the time range set by the program, and the time system output is recovered after the interval time T1 times out.
As shown in fig. 5, the multi-frequency mixed periodic cycle output is to output the frequency required by the high-speed clock after frequency multiplication by multi-path frequency division, and according to the set number of each frequency output clock, periodic cycle gating, the types of the currently output frequencies are 16, and the subsequent expansion can be performed according to the requirements.
The power supply adopts a special material circuit board and a capacitor discharge mode, a circuit switch is a core device, and the conduction time and the driving capability of the circuit switch restrict the rise time and the peak power of output pulse laser; the circuit requires that the conduction time is nanosecond level and the peak current is more than 15A; by obtaining the ultrahigh frequency high-speed large current driving power supply, the ultrahigh frequency high-power semiconductor laser with the frequency of more than 25MHz, the pulse width of 15ns and the single module peak power of more than 30W is obtained.
The utility model adopts a capacitor discharge mode, takes a circuit switch as a core device, restricts the rise time and the peak power of the output pulse laser by the conduction time and the driving capability of the circuit switch, has simple circuit, high efficiency, small power consumption, large peak power and short rise time, and further obtains the ultrahigh frequency high speed large current driving power supply.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (3)
1. An ultrahigh repetition frequency high-power laser light source is characterized in that: the high-voltage high-power semiconductor laser device comprises an input high-voltage HV, a charging current-limiting resistor R1, a pulse current-limiting resistor R2, an energy-storage capacitor C1, a clamping diode D1, a semiconductor laser D2, a control switch K and a load semiconductor diode LD, wherein the input high-voltage HV sequentially passes through the charging current-limiting resistor R1 and the pulse current-limiting resistor R2 to be connected with one end of the energy-storage capacitor C1, the other end of the energy-storage capacitor C1 is connected with the load semiconductor diode LD, one end of the control switch K is connected between the charging current-limiting resistor R1 and the pulse current-limiting resistor R2, the other end of the control switch K is connected between the energy-storage capacitor C1 and the load semiconductor diode LD through a clamping diode D1, the negative electrode of the clamping diode D1 is close to the control switch K, the positive electrode of the clamping diode D1 is close to the energy-storage capacitor C1, the positive electrode of the semiconductor laser D2 is connected between the control switch K and the negative electrode of the clamping diode D1, and the cathode of the semiconductor laser D2 is connected between the energy storage capacitor C1 and the load semiconductor diode LD.
2. The ultra-high repetition frequency high-power laser light source as claimed in claim 1, wherein: the system comprises a control switch K, and is characterized by further comprising a timing module and a driving module, wherein the timing module is used for controlling the on-time of the control switch K, the timing module is used for outputting timing signals, and the driving module controls the on-time of the control switch K according to the timing signals.
3. The ultra-high repetition frequency high-power laser light source as claimed in claim 2, wherein: the time system module comprises a crystal oscillator and an FPGA, the crystal oscillator is used for providing a clock source, the FPGA is used for receiving the clock source, frequency multiplication is carried out on the clock source to generate a high-speed clock, the high-speed clock is subjected to frequency division according to set parameters, time system control output is carried out after frequency division is completed simultaneously, the signal output end of the crystal oscillator is connected with the signal input end of the FPGA, and the signal output end of the FPGA is connected with the signal input end of the driving module through an interface circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121467330.3U CN215834886U (en) | 2021-06-30 | 2021-06-30 | Ultrahigh repetition frequency high-power laser light source |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121467330.3U CN215834886U (en) | 2021-06-30 | 2021-06-30 | Ultrahigh repetition frequency high-power laser light source |
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| Publication Number | Publication Date |
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| CN215834886U true CN215834886U (en) | 2022-02-15 |
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| CN202121467330.3U Active CN215834886U (en) | 2021-06-30 | 2021-06-30 | Ultrahigh repetition frequency high-power laser light source |
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2021
- 2021-06-30 CN CN202121467330.3U patent/CN215834886U/en active Active
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