CN201467083U - Two-stage pulse-width-limited precise-discharge machining pulse power supply - Google Patents
Two-stage pulse-width-limited precise-discharge machining pulse power supply Download PDFInfo
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- CN201467083U CN201467083U CN2009200807477U CN200920080747U CN201467083U CN 201467083 U CN201467083 U CN 201467083U CN 2009200807477 U CN2009200807477 U CN 2009200807477U CN 200920080747 U CN200920080747 U CN 200920080747U CN 201467083 U CN201467083 U CN 201467083U
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Abstract
The utility model discloses a two-stage pulse-width-limited precise-discharge machining pulse power supply. An adjustable regulated power supply E1, a current limiting resistor array R1 to Rn, a preceding stage field-effect tube Q1 and a discharge electrode anode P+ are sequentially and electrically connected. A backward stage field-effect tube Q2 is electrically connected with the preceding stage field-effect tube Q1 in series. The backward stage field-effect tube Q2 is electrically connected with the discharge electrode anode P+ and a discharge electrode cathode P- in parallel. The preceding stage field-effect tube and the backward stage field-effect tube are driven by high frequency in reverse phases and respectively control the rising edge and the falling edge of the output discharge pulse to realize two-stage pulse width limitation. The minimum limited output pulse width can reach 60 nanoseconds and thereby micro-energy discharge pulse is output.
Description
Technical field
The utility model belongs to precision electrical discharge pulse power source, is specifically related to a kind of precision electrical discharge pulse power source of two-stage limited pulse width.Adopt the utility model can obtain pulse pulse width, power supply that discharge energy is small.
Background technology
In accurate manufacturing fields such as accurate spark machined, accurate Electrolyzed Processing, need a kind of micro-energy impulsing power source usually, it is an essential elements that realizes precision EDM.It can be between positive and negative electrode high frequency discharge electric energy, thereby produce high temperature, the high pressure of moment, the small local material of fusible even gasification part reaches part is carried out the purpose that precise fine is removed processing.The minimum removal amount of material is relevant with the energy of pulse, and single pulse energy is more little, and the amount of its discharge removal material is just few more, and the trace that promptly discharges is more little, and the heat-affected zone is also more little.Countless adding up of trace of pulse discharge have just formed the surface of the processed removal of part.Under certain pulse voltage, pulsewidth is narrow more, and then the energy of pulse is more little, and the time of pulse discharge is short more, and the discharge trace that produces at piece surface will be littler.Like this, shorten pulsewidth, just can reduce pulse energy, the realization surface roughness value is lower, metamorphic layer is thinner, micro-flaw still less, electric machining that surface quality is higher.
In the existing Pulse Electric processing power source, mainly be divided into RC speed a formula pulse power and transistor independent pulse generator.Though the former can obtain tens nanosecond pulsewidth burst pulse because its discharge loop needs the time and can not obtain very high discharge frequency to capacitor charging, this seriously affects the efficient of electric machining; In addition, the speed energy of formula pulse power output of RC is wayward, because the time of the uncontrollable inter-train pause of discharge loop, when off time of two subpulses in succession especially in short-term, last time Fang Dian electric arc did not have complete deionization that discharge next time promptly takes place, will cause directly flowing between the positive and negative electrode, form paradoxical discharge and regular picture can't be gone on, be unfavorable for processing high-quality piece surface to the electric current of capacitor charging.The transistor independent pulse generator is realized pulsed discharge by opening with the off switch element.Because the transistor independent pulse generator need not to charge and spended time to capacitor, so it can realize that thereby high-frequency discharge reaches very high working (machining) efficiency, and because its discharge can realize by the control switch element, so can realize adaptive control by to the interpolar discharge status detection to discharge process.Yet, because the switching speed of switch element and the time-delay of control circuit element, traditional transistor independent pulse generator also is difficult to realize that the required pulsewidth of fine electric machining is the pulse of tens of nanoseconds, the voltage pulsewidth is usually more than 0.1 μ s, more accurate in order to realize, higher-quality electric machining, even the electric machining of nano-grade size precision, need the pulse power that pulsewidth is narrower, energy is littler.
Summary of the invention
The technical problems to be solved in the utility model provides a kind of precision electrical discharge pulse power source of two-stage limited pulse width, makes simple venation
The wide nanosecond that narrows down to is to reduce single pulse energy.
A kind of precision electrical discharge pulse power source of two-stage limited pulse width, comprise the adjustable constant pressure source E1 of direct current, electric resistance array selector switch SR1～SRn, capacitor array selector switch SC1～SCn, high power parallel electric resistance array R1～Rn, processing capacitor array C1～Cn in parallel, measuring resistance R22 measures capacitor C 22, prime field effect transistor Q1, back level field effect transistor Q2, diode D1, the anodal P+ of sparking electrode, sparking electrode negative pole P-, drive circuit I, drive circuit II, programmable logic device, the next single-chip microcomputer, host computer, the AD circuit; Direct current is adjustable constant pressure source E1 process electric resistance array selector switch SR1～SRn and the corresponding one by one electrical connection of high-power resistor R1～Rn, pass through prime field effect transistor Q1 more successively, diode D1, the anodal P+ of sparking electrode, sparking electrode negative pole P-forms the rising edge of a pulse restricting circuits; The diode D1 first via meets back level field effect transistor Q2, forms pulse trailing edge restricting circuits; Prime field effect transistor Q1 meets capacitor array selector switch SC1～SCn and processing capacitor array C1～Cn, forms the discharge energy auxiliary circuit; Diode D1 the second road connecting resistance R22, C22 and AD circuit form the discharge condition testing circuit; Host computer is electrically connected with the next single-chip microcomputer, programmable logic device, drive circuit I and field effect transistor Q1 successively, forms the rising edge of a pulse control circuit; Host computer is electrically connected with the next single-chip microcomputer, programmable logic device, drive circuit II and field effect transistor Q2 successively, forms pulse trailing edge control circuit; The next single-chip microcomputer is electrically connected with electric resistance array selector switch SR1～SRn and capacitor array selector switch SC1～SCn respectively again, forms resistance respectively and selects circuit and capacitor's capacity to select circuit.
Characteristics of the present utility model are: prime field effect transistor Q1 and back level field effect transistor Q2 series connection, and back level field effect transistor Q2 is in parallel with anodal P+ of discharge and discharge negative pole P-, formation is to the two-stage restriction of pulsewidth, when the pulse power is in running order, front and back stages field effect transistor Q1 and Q2 are by anti-phase driving, during prime field effect transistor Q1 conducting, back level field effect transistor Q2 turn-offs, the electric energy of constant pressure source E1 output is directly delivered between positive and negative sparking electrode P+ and the P-through high power parallel electric resistance array R1～Rn, cause the rising edge of pulse during open circuit, when prime field effect transistor Q1 turn-offs, back level field effect transistor Q2 conducting, electric energy between positive and negative sparking electrode P+ and the P-is directly released into negative pole P-, causes the trailing edge of pulse during open circuit.
Described the next single-chip microcomputer adopts single-chip microcomputer or DSP, and programmable logic device adopts CPLD or fpga chip.
Described the next single-chip microcomputer is the C8051F single-chip microcomputer, and programmable logic device adopts the MAX7000A chip.
The utility model is owing to adopted initiatively limited pulse width circuit of two-stage, limit the rising edge and the trailing edge of power supply output pulse respectively, can produce the nanosecond pulsewidth, the narrowest pulsewidth is better than 60ns, its discharge energy is very small, and frequency stabilization, be easy to control, be applicable to the accurate edm of micro-nano-scale.
Description of drawings
Below in conjunction with the drawings and specific embodiments the utility model is further specified.
Fig. 1 is the precision electrical discharge pulse power source main circuit connection layout of two-stage limited pulse width.
Fig. 2 is a width of cloth voltage pulse waveforms figure who exports between positive and negative sparking electrode P+ in the connecting circuit shown in Figure 1 and P-two ends.
Embodiment
Among Fig. 1, the utility model is a kind of precision electrical discharge pulse power source of two-stage limited pulse width, comprises the adjustable constant pressure source E1 of direct current, electric resistance array selector switch SR1～SRn, capacitor array selector switch SC1～SCn, high power parallel electric resistance array R1～Rn, processing capacitor array C1～Cn in parallel, measuring resistance R22, measure capacitor C 22, prime field effect transistor Q1, back level field effect transistor Q2, diode D1, the anodal P+ of sparking electrode, sparking electrode negative pole P-, drive circuit I, drive circuit II, programmable logic device, the next single-chip microcomputer, host computer, AD circuit etc. direct current is adjustable constant pressure source E1 process electric resistance array selector switch SR1～SRn and the corresponding one by one electrical connection of high-power resistor R1～Rn, pass through prime field effect transistor Q1 more successively, diode D1, the anodal P+ of sparking electrode, sparking electrode negative pole P-forms the rising edge of a pulse restricting circuits; The diode D1 first via meets back level field effect transistor Q2, forms pulse trailing edge restricting circuits; Prime field effect transistor Q1 meets capacitor array selector switch SC1～SCn and processing capacitor array C1～Cn, forms the discharge energy auxiliary circuit; Diode D1 the second road connecting resistance R22, C22 and AD circuit form the discharge condition testing circuit; Host computer is electrically connected with the next single-chip microcomputer, programmable logic device, drive circuit I and field effect transistor Q1 successively, forms the rising edge of a pulse control circuit; Host computer is electrically connected with the next single-chip microcomputer, programmable logic device, drive circuit II and field effect transistor Q2 successively, forms pulse trailing edge control circuit; The next single-chip microcomputer is electrically connected with electric resistance array selector switch SR1～SRn and capacitor array selector switch SC1～SCn respectively again, forms resistance respectively and selects circuit and capacitor's capacity to select circuit.
Direct current in the utility model is adjustable, and constant pressure source E1 model is MSZ-HLHY-55, the two-way drive circuit all adopts high speed photo coupling and high-speed driving chip, high speed photo coupling adopts 6N137, the high-speed driving chip adopts MC33152, AD chip in the AD circuit adopts AD775, host computer adopts general industrial computer, and the next single-chip microcomputer adopts 8 C8051F high-speed microprocessors, and programmable logic device adopts the MAX7000A chip of altera corp.
The pulse power of the present utility model is work like this: set running parameter by host computer earlier, as between pulsewidth, arteries and veins, voltage, electric current, electric capacity, polarity etc., download in the next single-chip microcomputer by the RS232 interface, the next single-chip microcomputer is mainly finished five work: the first, set required operating voltage; The second, conducting resistance array selector switch and capacitor array selector switch are determined resistance value and capacitance in the discharge main circuit respectively; The 3rd, send pulse parameter to programmable logic device; The 4th, gather the discharge gap voltage signal from the AD circuit, judge discharge condition; The 5th, parameters such as pulse power running status and discharge condition are fed back to host computer.Programmable logic device control Driver Circuit I and drive circuit II work, thus the sequential of the turn-on and turn-off of control field effect transistor Q1 and Q2 front and back stages is promptly controlled between output pulse width and arteries and veins.During work, front and back stages field effect transistor Q1 and Q2 are by anti-phase driving, and series connection, and then level field effect transistor Q2 is in parallel with positive and negative sparking electrode P+ and P-, constitute the two-stage restriction to pulsewidth.During prime field effect transistor Q1 conducting, back level field effect transistor Q2 turn-offs, and the electric energy of constant pressure source E1 output is directly delivered between positive and negative sparking electrode P+ and the P-through high power parallel electric resistance array R1～Rn, causes the rising edge of pulsewidth during open circuit; When prime field effect transistor Q1 turn-offs, back level field effect transistor Q2 conducting, the electric energy between positive and negative sparking electrode P+ and the P-is directly released into negative pole P-, causes the trailing edge of pulsewidth during open circuit.The sequential of strict control two-stage field effect transistor Q1 and Q2 just can be exported the burst pulse of nanosecond.
Fig. 2 is a width of cloth voltage pulse waveforms figure who exports between positive and negative sparking electrode P+ in the connecting circuit shown in Figure 1 and P-two ends.As can be seen from the figure, the minimum pulse width of pulse power output of the present utility model is less than 60 nanoseconds.
Claims (3)
1. the precision electrical discharge pulse power source of a two-stage limited pulse width, comprise the adjustable constant pressure source E1 of direct current, electric resistance array selector switch SR1～SRn, capacitor array selector switch SC1～SCn, high power parallel electric resistance array R1～Rn, processing capacitor array C1～Cn in parallel, measuring resistance R22 measures capacitor C 22, prime field effect transistor Q1, back level field effect transistor Q2, diode D1, the anodal P+ of sparking electrode, sparking electrode negative pole P-, drive circuit I, drive circuit II, programmable logic device, the next single-chip microcomputer, host computer, the AD circuit; Direct current is adjustable constant pressure source E1 process electric resistance array selector switch SR1～SRn and the corresponding one by one electrical connection of high-power resistor R1～Rn, pass through prime field effect transistor Q1 more successively, diode D1, the anodal P+ of sparking electrode, sparking electrode negative pole P-forms the rising edge of a pulse restricting circuits; The diode D1 first via meets back level field effect transistor Q2, forms pulse trailing edge restricting circuits; Prime field effect transistor Q1 meets capacitor array selector switch SC1～SCn and processing capacitor array C1～Cn, forms the discharge energy auxiliary circuit; Diode D1 the second road connecting resistance R22, C22 and AD circuit form the discharge condition testing circuit; Host computer is electrically connected with the next single-chip microcomputer, programmable logic device, drive circuit I and field effect transistor Q1 successively, forms the rising edge of a pulse control circuit; Host computer is electrically connected with the next single-chip microcomputer, programmable logic device, drive circuit II and field effect transistor Q2 successively, forms pulse trailing edge control circuit; The next single-chip microcomputer is electrically connected with electric resistance array selector switch SR1～SRn and capacitor array selector switch SC1～SCn respectively again, forms resistance respectively and selects circuit and capacitor's capacity to select circuit; It is characterized in that: prime field effect transistor Q1 and back level field effect transistor Q2 series connection, and back level field effect transistor Q2 is in parallel with anodal P+ of discharge and discharge negative pole P-, formation is to the two-stage restriction of pulsewidth, when the pulse power is in running order, front and back stages field effect transistor Q1 and Q2 are by anti-phase driving, during prime field effect transistor Q1 conducting, back level field effect transistor Q2 turn-offs, the electric energy of constant pressure source E1 output is directly delivered between positive and negative sparking electrode P+ and the P-through high power parallel electric resistance array R1～Rn, cause the rising edge of pulse during open circuit, when prime field effect transistor Q1 turn-offs, back level field effect transistor Q2 conducting, electric energy between positive and negative sparking electrode P+ and the P-is directly released into negative pole P-, causes the trailing edge of pulse during open circuit.
2. the precision electrical discharge pulse power source of two-stage limited pulse width according to claim 1 is characterized in that: described the next single-chip microcomputer employing single-chip microcomputer or DSP, programmable logic device employing CPLD or fpga chip.
3. the precision electrical discharge pulse power source of two-stage limited pulse width according to claim 1, it is characterized in that: described the next single-chip microcomputer is the C8051F single-chip microcomputer, programmable logic device adopts the MAX7000A chip.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009200807477U CN201467083U (en) | 2009-05-07 | 2009-05-07 | Two-stage pulse-width-limited precise-discharge machining pulse power supply |
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| CN2009200807477U CN201467083U (en) | 2009-05-07 | 2009-05-07 | Two-stage pulse-width-limited precise-discharge machining pulse power supply |
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| CN201467083U true CN201467083U (en) | 2010-05-12 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101579761B (en) * | 2009-05-07 | 2010-11-03 | 中国工程物理研究院机械制造工艺研究所 | Two-stage limited pulse width precision electrical discharge pulse power source |
| CN102513623A (en) * | 2011-12-29 | 2012-06-27 | 北京理工大学 | Novel metal microdefect electric pulse erosion device |
| CN103001621A (en) * | 2012-11-02 | 2013-03-27 | 长沙景嘉微电子股份有限公司 | Wide-tuning-range high-quality-factor switched capacitor array structure |
| CN103056461A (en) * | 2012-12-26 | 2013-04-24 | 扬州博尔特电气技术有限公司 | High-frequency impulse power supply of electric spark texturing system |
| CN107052481A (en) * | 2017-03-09 | 2017-08-18 | 中国工程物理研究院机械制造工艺研究所 | A kind of high frequency of multi-channel parallel cross-circulation driving is micro- can the electric machining pulse power |
| CN110459955A (en) * | 2019-07-23 | 2019-11-15 | 天津大学 | A kind of semiconductor laser device driving circuit of high high-power Gao Zhongying |
-
2009
- 2009-05-07 CN CN2009200807477U patent/CN201467083U/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101579761B (en) * | 2009-05-07 | 2010-11-03 | 中国工程物理研究院机械制造工艺研究所 | Two-stage limited pulse width precision electrical discharge pulse power source |
| CN102513623A (en) * | 2011-12-29 | 2012-06-27 | 北京理工大学 | Novel metal microdefect electric pulse erosion device |
| CN103001621A (en) * | 2012-11-02 | 2013-03-27 | 长沙景嘉微电子股份有限公司 | Wide-tuning-range high-quality-factor switched capacitor array structure |
| CN103056461A (en) * | 2012-12-26 | 2013-04-24 | 扬州博尔特电气技术有限公司 | High-frequency impulse power supply of electric spark texturing system |
| CN103056461B (en) * | 2012-12-26 | 2015-02-04 | 扬州博尔特电气技术有限公司 | High-frequency impulse power supply of electric spark texturing system |
| CN107052481A (en) * | 2017-03-09 | 2017-08-18 | 中国工程物理研究院机械制造工艺研究所 | A kind of high frequency of multi-channel parallel cross-circulation driving is micro- can the electric machining pulse power |
| CN107052481B (en) * | 2017-03-09 | 2019-08-09 | 中国工程物理研究院机械制造工艺研究所 | A kind of high frequency of multi-channel parallel cross-circulation driving is micro- can the electric machining pulse power |
| CN110459955A (en) * | 2019-07-23 | 2019-11-15 | 天津大学 | A kind of semiconductor laser device driving circuit of high high-power Gao Zhongying |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20100512 Effective date of abandoning: 20090507 |