CN107332459B - Nanosecond pulse power supply system for wire-cut electric discharge machining and control method - Google Patents

Nanosecond pulse power supply system for wire-cut electric discharge machining and control method Download PDF

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CN107332459B
CN107332459B CN201710721307.4A CN201710721307A CN107332459B CN 107332459 B CN107332459 B CN 107332459B CN 201710721307 A CN201710721307 A CN 201710721307A CN 107332459 B CN107332459 B CN 107332459B
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mos tube
module
diode
pulse
inductor
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CN107332459A (en
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于寿鹏
方恒阳
刘永钦
万江华
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M11/00Power conversion systems not covered by the preceding groups
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23HWORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H7/00Processes or apparatus applicable to both electrical discharge machining and electrochemical machining
    • B23H7/14Electric circuits specially adapted therefor, e.g. power supply
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/53Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
    • H03K3/57Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0003Details of control, feedback or regulation circuits
    • H02M1/0012Control circuits using digital or numerical techniques
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Mechanical Engineering (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Rectifiers (AREA)

Abstract

The invention discloses a nanosecond pulse power supply system for wire-cut electric discharge machining, which comprises a power supply body, wherein the power supply body comprises a microcontroller system module, a rectifying module, an electric energy conversion module and a high-frequency pulse module, one end of the microcontroller system module is externally connected with an auxiliary power input interface and a plurality of input/output interfaces, the input/output interfaces comprise a pulse output enabling input interface, a wire speed control interface, a configuration number interface and a communication interface, the other end of the microcontroller system module is respectively connected with the electric energy conversion module and the high-frequency pulse module, and the electric energy conversion module and the high-frequency pulse module are mutually connected; the power supply input interface is externally connected to one end of the rectifying module, the other end of the rectifying module is respectively connected with the pulse output interface and the high-frequency pulse module, and the pulse output interface is externally connected to the other end of the high-frequency pulse module. The invention has stable voltage and current, small output single pulse energy and good finish of the workpiece cutting surface.

Description

Nanosecond pulse power supply system for wire-cut electric discharge machining and control method
Technical Field
The invention belongs to the technical field of power supplies for electric spark cutting, and particularly relates to a nanosecond pulse power supply system for electric spark wire cutting and a control method.
Background
The wire-cut electric discharge technology is a technology for removing a workpiece by pulse electric discharge and cutting and forming a conductive workpiece by using a continuously moving thin metal wire (a multi-purpose molybdenum wire) as an electrode.
And voltage is applied to the two ends of the molybdenum wire electrode and the conductive workpiece, when the voltage reaches a certain threshold value, the air gap is broken down and is in a low-resistance state, and a certain technology is needed to limit the rapid rise of current at the moment, otherwise, the electronic device and the molybdenum wire are burnt, and the workpiece is burnt. In the prior art, the usual solution is to connect a high-power resistor current limiting or a series inductance in the discharge main loop in series to suppress the rising speed of the current so that the current does not rise beyond a safe value during the discharge pulse. The scheme is simple and easy to operate, but has obvious defects that a large power resistor connected in series into a circuit consumes most of energy for heating, so that the energy is wasted greatly, and meanwhile, a large amount of generated heat worsens the working environment of the machine tool and limits the machining efficiency. The working mode of the series inductor only inhibits the rising speed of current, so that the discharge current waveform is similar to triangular wave, the existence of peak current accelerates the loss of molybdenum wires and the reduction of the finish of a cutting surface, and the rising of the average current of discharge pulses is limited, so that the processing efficiency is influenced. At present, some companies and scientific research institutions make improvements on the existing pulse power supply, and certain progress is made in research directions of adopting a high-performance processor, adding additional control circuits and the like. However, the circuit scale becomes large and complex, a series of stability problems easily occur, and the cost is remarkably increased, so that the circuit is difficult to be used for practical production.
At present, pulse power supplies on the market all have certain difficulty when processing large-thickness workpieces, most pulse power supplies cannot process the large-thickness workpieces, part of pulse power supplies can process the large-thickness workpieces, but the processing efficiency is extremely low, the processing cost is too high, and the practical value is not great.
The smaller the single pulse energy output, the better the cut surface finish. The pulse width of the output of the existing linear cutting pulse power supply is of the us grade, and the surface finish of cutting is limited. Thus, reducing the discharge pulse width is an important direction to improve the cut surface finish.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides a nanosecond pulse power supply system for wire-cut electric discharge machining and a control method.
The nanosecond pulse power supply system for wire-cut electric discharge machining comprises a power supply body, wherein the power supply body comprises a microcontroller system module, a rectifying module, an electric energy conversion module and a high-frequency pulse module, one end of the microcontroller system module is externally connected with an auxiliary power input interface and a plurality of input and output interfaces, the input and output interfaces comprise a pulse output enabling input interface, a wire speed control interface, a configuration number interface and a communication interface, the other end of the microcontroller system module is respectively connected with the electric energy conversion module and the high-frequency pulse module, and the electric energy conversion module and the high-frequency pulse module are mutually connected; the power supply input interface is externally connected to one end of the rectifying module, the other end of the rectifying module is respectively connected with the pulse output interface and the high-frequency pulse module, and the pulse output interface is externally connected to the other end of the high-frequency pulse module.
Preferably, the microcontroller system module adopts an ARM architecture micro-control chip.
Further, the electric energy conversion module comprises a plurality of inductors and an MOS tube I, wherein the inductors comprise an inductor A, an inductor B and an inductor C, the MOS tube I comprises an MOS tube A, MOS tube B, MOS tube C, MOS tube D, MOS E and an MOS tube F, a drain electrode, a source electrode and a grid electrode are arranged on the MOS tube I, and the grid electrodes of the MOS tube A, MOS tube B, MOS tube C, MOS tube D, MOS E and the MOS tube F are connected with the microcontroller system module; the drain sides of the MOS tube A, MOS tube B and the MOS tube C are connected together and connected with the rectifying module, and the source sides of the MOS tube D, MOS tube E and the MOS tube F are connected together and also connected with the rectifying module; the source electrode of the MOS tube A is connected with the drain electrode of the MOS tube D in series and is connected with one end of the inductor A, and the source electrode of the MOS tube B is connected with the drain electrode of the MOS tube E in series and is connected with one end of the inductor B; the source electrode of the MOS tube C is connected with the drain electrode of the MOS tube F in series and is connected with one end of the inductor C, and the other ends of the inductor A, the inductor B and the inductor C are connected with the high-frequency pulse module.
Further, the high-frequency pulse module comprises a capacitor A, a plurality of welding terminals, a MOS tube II and a diode; the welding terminal comprises a wiring terminal A, a wiring terminal B, a wiring terminal C and a wiring terminal D, wherein the wiring terminal A and the wiring terminal B are connected together and then connected with the front end of a capacitor A, the wiring terminal C and the wiring terminal D are connected together and then connected with the rear end of the capacitor A, and the front end and the rear end of the capacitor A are both connected with a pulse output interface; the MOS tube II comprises a MOS tube G and a MOS tube H which are connected in parallel, the MOS tube II is provided with a drain electrode, a source electrode and a grid electrode, and the grid electrodes of the MOS tube G and the MOS tube H are connected with a microcontroller system module; the diode comprises a diode C, a diode A, a diode B and a diode D which are connected in parallel, wherein cathodes of the diode A, the diode B and the diode D are connected together and connected with the front end of the capacitor A, anodes of the diode A, the diode B and the diode D are connected together and respectively connected with a drain electrode of the MOS tube G, a drain electrode of the MOS tube H and an anode of the diode C, a source electrode of the MOS tube G and a source electrode of the MOS tube H are connected with the rear end of the capacitor A, and cathodes of the diode C are connected with the rectifying module.
Further, the invention also provides a control method of the nanosecond pulse power supply system for wire-cut electric discharge machining, which comprises the following steps: the microcontroller system module is communicated with the outside through an external auxiliary power input interface and a plurality of input/output interfaces, the rectification module rectifies alternating current input from the power input interface into a voltage source through an uncontrolled rectification circuit, and after receiving the voltage source output by the rectification module, the electric energy conversion module adjusts the on/off of each MOS tube I through a three-phase staggered BUCK circuit under the control of the microcontroller system module and outputs constant current near a set value after inductance filtration; the microcontroller system module is responsible for generating a high-frequency signal and transmitting the high-frequency signal to the high-frequency pulse module, and the high-frequency pulse module converts constant current output by the electric energy conversion module into pulse energy by controlling the on and off of the high-frequency MOS tube II according to the high-frequency signal, and the pulse energy is output through the pulse number output interface.
Further, the microcontroller system module controls the on and off of the corresponding MOS tube I by controlling the gate voltage of each MOS tube I connected with the microcontroller system module; and the current of the inductor A is controlled by alternately switching on and off the MOS tube A and the MOS tube D, the current of the inductor B is controlled by alternately switching on and off the MOS tube B and the MOS tube E, the current of the inductor C is controlled by alternately switching on and off the MOS tube C and the MOS tube F, and the currents of the inductor A, the inductor B and the inductor C are output to the high-frequency pulse module after being overlapped together.
Preferably, the open phases of the MOS tube A, MOS tube B, MOS tube C are sequentially different by 120 degrees.
Further, the microcontroller system module controls the gate voltages of the MOS tube G and the MOS tube H which are connected with the microcontroller system module respectively, so that the MOS tube G and the MOS tube H are controlled to be turned on and off respectively; when the MOS tube G and the MOS tube H are both on, the current output by the electric energy conversion module flows back to the electric energy conversion module through the MOS tube G and the MOS tube H; when the MOS tube G and the MOS tube H are both turned off, the current output by the electric energy conversion module charges the capacitor A through the diode A, the diode B and the diode D which are connected in parallel, so that the terminal voltage of the capacitor A is quickly increased, when the voltage of the capacitor A is higher than the output voltage of the rectification module, and when air between the molybdenum wire and the workpiece is not broken down, the current flows back to the rectification module through the diode C, and when the air between the molybdenum wire and the workpiece is broken down, the current flows through the three diodes which are connected in parallel and then flows through the workpiece to be processed, so that the processing of the workpiece is realized.
Compared with the prior art, the method has the following advantages:
1. the invention adopts ARM architecture micro-control chip to control current to keep near the set current, avoiding triangle wave current peak, making each discharge pulse energy as consistent as possible, and being beneficial to improving surface finish of workpiece processing surface. Overcurrent protection is performed through the digital controller, so that the electronic element and the workpiece are prevented from being burnt out due to overcurrent under severe conditions.
2. The input power supply of the invention is three-phase alternating current, adopts uncontrolled rectification to rectify the alternating current into direct current, adopts three-phase staggered BUCK topology to realize the conversion from a voltage source to a constant current source, i.e. the traditional high-power resistor is omitted, the energy loss in the scheme of series resistance of a discharge main loop is avoided, the electric energy conversion efficiency is improved,
3. the invention adopts the three-phase staggered BUCK topology, increases the output power, can realize the processing of workpieces with large thickness, and simultaneously greatly improves the processing efficiency.
4. The invention adopts a plurality of high-frequency MOS tubes connected in parallel, and realizes nanosecond-level narrow pulse output by rapidly switching the two states of short circuit output and external output power of the constant current source, thereby eliminating the phenomena of slow rising and tailing of output current and greatly improving the surface smoothness of cutting.
5. The invention reduces the impact on the molybdenum wire and reduces the loss of the molybdenum wire;
6. the invention realizes real-time adjustable processing pulse parameters by communicating the upper computer with the power supply main body.
7. According to the invention, the current acquisition module acquires BUCK three-phase current values in real time, so that closed-loop control of output current is realized.
8. The invention increases the output power, improves the cutting efficiency, and particularly increases the efficiency of cutting workpieces with large thickness.
In summary, the power supply control system has constant current and stable output single pulse energy, can realize micro pulse output, has good surface finish of a processed workpiece, and is worthy of popularization and use.
Drawings
The invention will be described in further detail with reference to the drawings and the detailed description.
FIG. 1 is a schematic diagram of the present invention;
FIG. 2 is a schematic diagram of an electrical energy conversion module according to the present invention;
fig. 3 is a schematic diagram of a high frequency pulse module according to the present invention:
reference numerals: 1. an auxiliary power input interface; 2. a pulse output enable input interface; 3. a microcontroller system module; 4. a wire speed control interface; 5. a configuration number interface; 6. a communication interface; 7. a pulse output interface; 8. a high frequency pulse module; 9. an electric energy conversion module; 10. a rectifying module; 11. a power input interface; q1, MOS tube A; q2, MOS tube B; q3, MOS tube C; q4, MOS tube D; q5, MOS tube E; q6, MOS tube F; l1, inductance A; l2 and an inductor B; l3, inductance C; q7, MOS tube G; q8, MOS tube H; d1, a diode a; d2, a diode B; d3, a diode C; d4, a diode D; c1, a capacitor A; x1, a wiring terminal A; x2, a wiring terminal B; x3, a wiring terminal C; x4, wiring terminal D.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
As shown in fig. 1, a nanosecond pulse power supply system for wire-cut electric discharge machining comprises a power supply body, wherein the power supply body comprises a microcontroller system module 3, a rectifying module 10, an electric energy conversion module 9 and a high-frequency pulse module 8, the microcontroller system module 3 adopts an ARM architecture micro-control chip, one end of the microcontroller system module 3 is externally connected with an auxiliary power input interface 1 and a plurality of input/output interfaces, the input/output interfaces comprise a pulse output enabling input interface 2, a wire speed control interface 4, a configuration number interface 5 and a communication interface 6, the other end of the microcontroller system module 3 is respectively connected with the electric energy conversion module 9 and the high-frequency pulse module 8, and the electric energy conversion module 9 and the high-frequency pulse module 8 are mutually connected; one end of the rectifying module 10 is externally connected with a power input interface 11, the other end of the rectifying module 10 is respectively connected with the pulse output interface 7 and the high-frequency pulse module 8, and the other end of the high-frequency pulse module 8 is externally connected with the pulse output interface 7.
As shown in fig. 2, the electric energy conversion module includes a plurality of inductors and a MOS tube I, the inductors include an inductor A L1, an inductor A L2 and an inductor C L3, a drain electrode, a source electrode and a gate electrode are disposed on the MOS tube I, the MOS tube I includes a MOS tube A Q1, a MOS tube B Q, a MOS tube C Q3, a MOS tube D Q4, a MOS tube E Q and a MOS tube F Q6, and the gates of the MOS tube A Q1, the MOS tube B Q2, the MOS tube C Q3, the MOS tube D Q4, the MOS tube E Q5 and the MOS tube F Q are connected to the microcontroller system module 3; the drain sides of the MOS tube A Q, the MOS tube B Q and the MOS tube C Q3 are connected together and connected to the rectification module 10, and the source sides of the MOS tube D Q4, the MOS tube E Q5 and the MOS tube F Q6 are connected together and also connected to the rectification module 10; the source of the MOS transistor A Q1 is connected in series with the drain of the MOS transistor D Q and is connected to one end of the inductor A L1, and the source of the MOS transistor B Q2 is connected in series with the drain of the MOS transistor E Q5 and is connected to one end of the inductor A L; the source electrode of the MOS tube C Q is connected in series with the drain electrode of the MOS tube F Q and is connected with one end of the inductor C L3, and the other ends of the inductor A L1, the inductor A L and the inductor C L are connected with the high-frequency pulse module 8. The microcontroller system module 3 controls the on and off of the corresponding MOS tube I by controlling the gate voltage of each MOS tube I connected with the microcontroller system module, and the on phases of the MOS tube A Q, the MOS tube B Q and the MOS tube C Q are sequentially different by 120 degrees. The current of the inductor A L is controlled by alternately switching on and off the MOS tube A Q and the MOS tube D Q4, the current of the inductor A L is controlled by alternately switching on and off the MOS tube B Q and the MOS tube E Q5, the current of the inductor A L is controlled by alternately switching on and off the MOS tube C Q3 and the MOS tube F Q6, the current of the inductor C L3 is controlled, and the currents of the inductor A L, the inductor A L2 and the inductor C L are output to the high-frequency pulse module 8 after being overlapped.
As shown in fig. 3, the high-frequency pulse module 8 includes a capacitor A C1, a plurality of welding terminals, a MOS tube II and a diode; the welding terminals comprise a wiring terminal A X1, a wiring terminal B X2, a wiring terminal C X3 and a wiring terminal D X4, wherein the wiring terminal A X and the wiring terminal B X2 are connected together and then connected with the front end of a capacitor A C1, the wiring terminal C X3 and the wiring terminal D X4 are connected together and then connected with the rear end of a capacitor A C1, and the front end and the rear end of the capacitor A C1 are both connected with a pulse output interface 7; the MOS tube II comprises an MOS tube G Q and an MOS tube H Q which are connected in parallel, a drain electrode, a source electrode and a grid electrode are arranged on the MOS tube II, and the grid electrode of the MOS tube G Q and the grid electrode of the MOS tube H Q are connected with the microcontroller system module 3; the diodes include a diode C D3, a diode A D1, a diode B D2 and a diode D D4 connected in parallel, the cathodes of the diode A D1, the diode B D2 and the diode D D4 are connected together and connected to the front end of the capacitor A C1, the anodes of the diode A D, the diode B D and the diode D D4 are connected together and connected to the drain of the MOS diode G Q, the drain of the MOS diode H Q8 and the anode of the diode C D3, respectively, the source of the MOS diode G Q7 and the source of the MOS diode H Q are connected to the rear end of the capacitor A C1, and the cathode of the diode C D is connected to the rectifying module 10. The microcontroller system module 3 controls the on and off of the MOS transistor G Q and the MOS transistor H Q respectively by controlling the gate voltages of the MOS transistor G Q and the MOS transistor H Q respectively; when both the MOS transistor G Q and the MOS transistor H Q are on, the current output by the electric energy conversion module 9 flows back to the electric energy conversion module 9 through the MOS transistor G Q and the MOS transistor H Q8; when the MOS tube G Q and the MOS tube H Q are both turned off, the current output by the electric energy conversion module 9 charges the capacitor A C through the diode A D1, the diode B D and the diode D D4 which are connected in parallel, so that the terminal voltage of the capacitor A C1 is rapidly increased, when the voltage of the capacitor A C is higher than the output voltage of the rectification module 10 and air between the molybdenum wire and the workpiece is not broken down, the current flows back to the rectification module 10 through the diode C D3, and when the air between the molybdenum wire and the workpiece is broken down, the current flows through the three diodes which are connected in parallel and the workpiece to be processed, so that the processing of the workpiece is realized.
The control principle of the nanosecond pulse power supply system for wire-cut electric discharge machining is as follows: the rectification module 10 converts alternating current input from the power input interface 11 into a voltage source through an uncontrolled rectification circuit, the microcontroller system module 3 communicates with the outside through an external auxiliary power input interface 1 and a plurality of input/output interfaces, the electric energy conversion module 9 receives the voltage source output by the rectification module 10, and under the control of the microcontroller system module 3, the switching on and off of each MOS tube I are adjusted through a three-phase staggered BUCK circuit, and after inductive filtering, constant current near a set value is output; the microcontroller system module 3 is responsible for generating a high-frequency signal and transmitting the high-frequency signal to the high-frequency pulse module 8, and the high-frequency pulse module 8 converts constant current output by the electric energy conversion module 9 into pulse energy by controlling the on and off of the high-frequency MOS tube II according to the high-frequency signal, and the pulse energy is output through the pulse number output interface.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.

Claims (4)

1. The control method of the nanosecond pulse power supply system for wire-cut electric discharge machining is characterized in that the power supply system comprises a power supply body, the power supply body comprises a microcontroller system module, a rectifying module, an electric energy conversion module and a high-frequency pulse module, one end of the microcontroller system module is externally connected with an auxiliary power input interface and a plurality of input/output interfaces, the input/output interfaces comprise a pulse output enabling input interface, a wire speed control interface, a configuration number interface and a communication interface, the other end of the microcontroller system module is respectively connected with the electric energy conversion module and the high-frequency pulse module, and the electric energy conversion module and the high-frequency pulse module are mutually connected; one end of the rectifying module is externally connected with a power input interface, the other end of the rectifying module is respectively connected with the pulse output interface and the high-frequency pulse module, and the other end of the high-frequency pulse module is externally connected with the pulse output interface;
the microcontroller system module adopts an ARM architecture micro-control chip;
the electric energy conversion module comprises a plurality of inductors and an MOS tube I, wherein the inductors comprise an inductor A, an inductor B and an inductor C, the MOS tube I comprises an MOS tube A, MOS tube B, MOS tube C, MOS tube D, MOS tube E and an MOS tube F, a drain electrode, a source electrode and a grid electrode are arranged on the MOS tube I, and the grid electrodes of the MOS tube A, MOS tube B, MOS tube C, MOS tube D, MOS tube E and the MOS tube F are connected with the microcontroller system module; the drain sides of the MOS tube A, MOS tube B and the MOS tube C are connected together and connected with the rectifying module, and the source sides of the MOS tube D, MOS tube E and the MOS tube F are connected together and also connected with the rectifying module; the source electrode of the MOS tube A is connected with the drain electrode of the MOS tube D in series and is connected with one end of the inductor A, and the source electrode of the MOS tube B is connected with the drain electrode of the MOS tube E in series and is connected with one end of the inductor B; the source electrode of the MOS tube C is connected with the drain electrode of the MOS tube F in series and is connected with one end of the inductor C, and the other ends of the inductor A, the inductor B and the inductor C are connected with the high-frequency pulse module;
the high-frequency pulse module comprises a capacitor A, a plurality of welding terminals, a MOS tube II and a diode; the welding terminal comprises a wiring terminal A, a wiring terminal B, a wiring terminal C and a wiring terminal D, wherein the wiring terminal A and the wiring terminal B are connected together and then connected with the front end of a capacitor A, the wiring terminal C and the wiring terminal D are connected together and then connected with the rear end of the capacitor A, and the front end and the rear end of the capacitor A are both connected with a pulse output interface; the MOS tube II comprises a MOS tube G and a MOS tube H which are connected in parallel, the MOS tube II is provided with a drain electrode, a source electrode and a grid electrode, and the grid electrodes of the MOS tube G and the MOS tube H are connected with a microcontroller system module; the diode comprises a diode C, a diode A, a diode B and a diode D which are connected in parallel, wherein cathodes of the diode A, the diode B and the diode D are connected together and are connected with the front end of a capacitor A, anodes of the diode A, the diode B and the diode D are connected together and are respectively connected with a drain electrode of a MOS tube G, a drain electrode of a MOS tube H and an anode of the diode C, a source electrode of the MOS tube G and a source electrode of the MOS tube H are connected with the rear end of the capacitor A, and a cathode of the diode C is connected with a rectifying module;
the microcontroller system module is communicated with the outside through an external auxiliary power input interface and a plurality of input/output interfaces, the rectification module rectifies alternating current input from the power input interface into a voltage source through an uncontrolled rectification circuit, and after receiving the voltage source output by the rectification module, the electric energy conversion module adjusts the on/off of each MOS tube I through a three-phase staggered BUCK circuit under the control of the microcontroller system module and outputs constant current near a set value after inductance filtration; the microcontroller system module is responsible for generating a high-frequency signal and transmitting the high-frequency signal to the high-frequency pulse module, and the high-frequency pulse module converts constant current output by the electric energy conversion module into pulse energy by controlling the on and off of the high-frequency MOS tube II according to the high-frequency signal, and the pulse energy is output through the pulse number output interface.
2. The control method of a nanosecond pulse power supply system for wire-cut electric discharge machining according to claim 1, wherein the microcontroller system module controls the on and off of the corresponding MOS tube I by controlling the gate voltage of each MOS tube I connected thereto, respectively; and the current of the inductor A is controlled by alternately switching on and off the MOS tube A and the MOS tube D, the current of the inductor B is controlled by alternately switching on and off the MOS tube B and the MOS tube E, the current of the inductor C is controlled by alternately switching on and off the MOS tube C and the MOS tube F, and the currents of the inductor A, the inductor B and the inductor C are output to the high-frequency pulse module after being overlapped together.
3. The control method of the nanosecond pulse power supply system for wire-cut electric discharge machining according to claim 2, wherein the turn-on phases of the MOS tube A, MOS tube B, MOS tube C are sequentially different by 120 °.
4. The control method of the nanosecond pulse power supply system for wire-cut electric discharge machining according to any one of claims 1 to 3, wherein the microcontroller system module controls the on and off of the MOS transistor G and the MOS transistor H by controlling the gate voltages of the MOS transistor G and the MOS transistor H respectively; when the MOS tube G and the MOS tube H are both on, the current output by the electric energy conversion module flows back to the electric energy conversion module through the MOS tube G and the MOS tube H; when the MOS tube G and the MOS tube H are both turned off, the current output by the electric energy conversion module charges the capacitor A through the diode A, the diode B and the diode D which are connected in parallel, so that the terminal voltage of the capacitor A is quickly increased, when the voltage of the capacitor A is higher than the output voltage of the rectification module, and when air between the molybdenum wire and the workpiece is not broken down, the current flows back to the rectification module through the diode C, and when the air between the molybdenum wire and the workpiece is broken down, the current flows through the three diodes which are connected in parallel and then flows through the workpiece to be processed, so that the processing of the workpiece is realized.
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CN110238468B (en) * 2019-07-25 2020-11-17 北京东兴润滑剂有限公司 Reinforced chip removal method for electric spark machining

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