CN112596349B - Two-photon parallel direct writing device and method based on multi-lattice generation and independent control - Google Patents
Two-photon parallel direct writing device and method based on multi-lattice generation and independent control Download PDFInfo
- Publication number
- CN112596349B CN112596349B CN202110046632.1A CN202110046632A CN112596349B CN 112596349 B CN112596349 B CN 112596349B CN 202110046632 A CN202110046632 A CN 202110046632A CN 112596349 B CN112596349 B CN 112596349B
- Authority
- CN
- China
- Prior art keywords
- convex lens
- micro
- slm
- lens
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 11
- 238000012545 processing Methods 0.000 claims abstract description 21
- 210000002858 crystal cell Anatomy 0.000 claims description 13
- 239000004973 liquid crystal related substance Substances 0.000 claims description 13
- 238000003384 imaging method Methods 0.000 claims description 11
- 238000006073 displacement reaction Methods 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 6
- 230000001105 regulatory effect Effects 0.000 claims description 6
- 210000001747 pupil Anatomy 0.000 claims description 3
- RURPJGZXBHYNEM-UHFFFAOYSA-N 2-[2-[(2-hydroxyphenyl)methylideneamino]propyliminomethyl]phenol Chemical compound C=1C=CC=C(O)C=1C=NC(C)CN=CC1=CC=CC=C1O RURPJGZXBHYNEM-UHFFFAOYSA-N 0.000 claims 6
- 238000001259 photo etching Methods 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 2
- 101100277918 Caenorhabditis elegans dmd-4 gene Proteins 0.000 description 25
- 238000010586 diagram Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000001459 lithography Methods 0.000 description 7
- 210000004027 cell Anatomy 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 6
- 230000004907 flux Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 241001270131 Agaricus moelleri Species 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2057—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using an addressed light valve, e.g. a liquid crystal device
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/70391—Addressable array sources specially adapted to produce patterns, e.g. addressable LED arrays
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70416—2.5D lithography
Abstract
The invention discloses a two-photon parallel direct writing device and method based on multi-lattice generation and independent control, which mainly comprises three core elements: the DMD equally divides an effective pixel area into N multiplied by N units, one unit corresponds to one light spot, and m multiplied by m micro mirrors contained in each unit of the DMD are independently switched to realize independent regulation and control of the light spot intensity and uniformity of each unit; the SLM equally divides an effective pixel area into N multiplied by N units, and the N units are in one-to-one correspondence with the incident light spots of the units and independently perform phase control; the MLA is used for generating a focus array, the number N multiplied by N of micro lenses determines the number of lattices, the lattices are then imaged to an objective lens focal plane through a convex lens and an objective lens for processing, the device and the method have the function of gray scale photoetching, can rapidly process curved surface structures with arbitrary shapes and high uniformity and true three-dimensional microstructures, and can be applied to the fields of super-resolution photoetching and the like.
Description
Technical Field
The invention belongs to the technical field of micro-nano optics and the field of optical element processing and manufacturing, and particularly relates to a two-photon parallel direct writing device and method based on multi-lattice generation and independent control.
Background
The Spatial Light Modulator (SLM) and the digital micromirror array (DMD) can be respectively used for modulating wave front and light field amplitude, and the wave front and the light field amplitude are respectively combined with the super-resolution two-photon direct writing technology, so that the advantages of the SLM (or the DMD) and the two photons are simultaneously exerted, and the flexible and efficient processing of the micro-nano structure is realized. At present, although the two-photon direct writing technical scheme based on the DMD or the SLM obtains remarkable results in the aspects of super-resolution realization, three-dimensional complex structure processing and the like, no particularly remarkable effect is obtained in the aspect of improving processing flux, the great improvement of flux is often realized by increasing parallel lines, the increase of the parallel lines can lead to the reduction of processing flexibility, if the processing paths of all parallel light beams cannot be controlled respectively, the parallel light beams can only be processed according to a unified planning path, and the obtained processing structure is single.
Gray scale lithography is an important technology for manufacturing three-dimensional microstructures, batch manufacturing is generally realized by adopting gray scale masks, different gray scales of the gray scale masks correspond to different transmittance, so that exposure dose generated on the surface of a photosensitive material is adjusted, a three-dimensional structure proportional to the exposure dose can be obtained after development, and patterns on a photosensitive layer are copied on a substrate by etching technology, so that a surface structure is finally formed. At present, the main problem in manufacturing gray scale masks is that along with the increase of gray scale, the manufacturing difficulty and the cost are greatly increased; when the gray scale lithography technology is applied to manufacture the three-dimensional micro device, the design of the free-form surface gray scale mask graph is limited, and generally, only three-dimensional microstructures with the surfaces of elementary analytic surfaces (such as cambered surfaces and spherical surfaces) can be processed, gray scale masks with any shape patterns can not be manufactured, and the manufacture of the three-dimensional microstructures comprising the free-form surfaces is difficult to realize; in addition, gray scale lithography based on gray scale masks is generally only capable of processing on the surface of a material, and cannot realize true three-dimensional microstructure fabrication. The defects of low processing flux, poor uniformity and the like are caused by adopting point-to-point scanning and synchronously controlling the light spot dosage to carry out gray scale photoetching.
The literature [ Optics & Laser Technology, 2019, 113:407-415] realizes a 70×110 light spot lattice through a DMD and a bilateral microlens space filtering array, so that flux is greatly improved, gray scale lithography is carried out on each light spot dose control through the DMD, parallel processing of any free-form surface structure is realized, but the scheme cannot realize independent free control of each light spot path, and by adopting an LED ultraviolet light source, true three-dimensional microstructure processing cannot be realized, and the obtained resolution is only in the micrometer scale.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a multi-lattice generation and independent control two-photon parallel direct writing device and method.
The technical scheme of the invention is as follows:
a multi-lattice generating and independent control two-photon parallel direct writing device comprises a femtosecond laser pulse, a beam expander, a first reflecting mirror, a digital micro mirror array DMD, a first convex lens, a second reflecting mirror, a spatial light modulator SLM, a third reflecting mirror, a third convex lens, a fourth reflecting mirror, a square adjustable diaphragm, a micro lens array MLA, a fifth convex lens, a dichroic mirror, an objective lens, a precise displacement table and a sixth convex lens and a CCD which are sequentially arranged in the light advancing direction.
Preferably, the DMD is configured to perform amplitude modulation on an incident light spot, specifically, the DMD equally divides an effective pixel area into n×n units, one unit corresponds to one light spot, and performs independent on-off state switching on m×m micromirrors included in each unit of the DMD, so as to independently regulate and control the intensity and uniformity of the light spot of each unit.
Preferably, the spatial light modulator SLM performs phase modulation on an incident light spot, specifically: the effective pixel area of the spatial light modulator SLM is equally divided into N multiplied by N units, each unit comprises m multiplied by m liquid crystal cells, each liquid crystal cell of each unit of the spatial light modulator SLM corresponds to m multiplied by m pixels of each unit of the digital micromirror array DMD one by one, and the wave front of each unit light spot is independently regulated and controlled by controlling the m multiplied by m liquid crystal cells in each unit of the spatial light modulator SLM.
Preferably, the first convex lens and the second convex lens groupIn a 4F system for imaging the light field on a DMD to a spatial light modulator SLM, the focal lengths F1 and F2 of the first and second convex lenses satisfy F1/f2=d D /d S Wherein d is D 、d S Pixel pitch of the digital micromirror array DMD and the spatial light modulator SLM, respectively; and adjusting the positions and the attitudes of the digital micromirror array (DMD) and the Spatial Light Modulator (SLM) so that after a light beam passes through a 4F system, each unit light spot is overlapped with each unit area on the Spatial Light Modulator (SLM) one by one.
Preferably, the third convex lens and the fourth convex lens form a second 4F system for imaging the light field on the spatial light modulator SLM onto the focal plane of the microlens array MLA, and the focal lengths F3 and F4 of the third convex lens and the fourth convex lens satisfy F3/F4=m×d S /d M Wherein d is M Microlens spacing for MLA; and adjusting the transverse position of the micro lens array MLA to enable each unit light spot to correspond to each micro lens of the micro lens array MLA one by one.
Preferably, the first mirror and the second mirror are used for adjusting the incident angle of the digital micromirror array DMD and the spatial light modulator SLM, respectively, wherein the incident angle of the spatial light modulator SLM is controlled within 10 °.
Preferably, the microlens array MLA comprises n×n microlenses for focusing the incident n×n unit spots, one unit spot corresponding to each microlens, and at most producing an n×n focal array at the focal plane of the MLA (14); the wave front of each unit light spot is modulated by a Spatial Light Modulator (SLM), and the drop point position of each focus near the focus of the corresponding microlens optical axis is independently controlled.
The square adjustable diaphragm is used for limiting the size of a light spot incident to the micro lens array MLA, and the caliber of the square adjustable diaphragm is the size of the effective area of the micro lens array MLA.
Preferably, the fifth convex lens and the micro lens array MLA form a third 4F system, the focal array generated by the micro lens array MLA is changed into parallel light transmitted at different angles after passing through the fifth convex lens, spot overlapping is realized at the entrance pupil plane of the objective lens, and finally, a parallel direct writing spot lattice is formed by focusing on the focal plane of the objective lens.
A method based on the above device, comprising the steps of: the femtosecond laser pulse is incident on a digital micro-mirror array DMD after passing through a beam expander and a first reflecting mirror, the digital micro-mirror array DMD carries out amplitude modulation on an incident light spot, then the incident light spot is imaged on a spatial light modulator SLM through a 4F system and a second reflecting mirror, pure phase modulation is carried out on the light spot through the spatial light modulator SLM, the light spot emitted from the spatial light modulator SLM is incident on a micro-lens array MLA through a third reflecting mirror, a 4F system second reflecting mirror, a fourth reflecting mirror and a square adjustable diaphragm in sequence, a focus lattice is generated on a micro-lens array MLA focal plane, then the lattice is imaged on an objective lens focal plane on a precise displacement table through a fifth convex lens, a dichroic mirror and an objective lens, finally high-flux super-resolution two-photon direct writing processing is carried out, and the generated fluorescence is focused on the CCD through the objective lens, the dichroic mirror and a sixth convex lens for imaging.
The invention has the following technical effects:
the invention utilizes the MLA to generate the multi-beam focusing dot matrix, and simultaneously independently controls the dose and the position of each beam through the DMD and the SLM, so that the realized dot matrix has a plurality of dots, the processing flux is high, the intensity of each light spot is controllable, the gray scale lithography function is realized, the gray scale level is high without adopting the traditional gray scale mask, the positions of each light spot are independently controllable, the processing is more flexible, and the super-resolution parallel processing of a high-uniformity arbitrary curved surface structure and a true three-dimensional microstructure can be realized.
Drawings
FIG. 1 is a schematic diagram of a two-photon parallel write-through device based on multi-lattice generation and independent control;
FIG. 2 is a schematic diagram of the present invention for implementing N dot matrix generation and independent control of intensity position through DMD, SLM and MLA;
FIG. 3 is a schematic diagram of the present invention for achieving N spot lattice intensity distribution using DMDs;
FIG. 4 is a schematic diagram of the principle of the invention for realizing the position change of the light spot after the MLA micro-lens by the wave front control;
FIG. 5 is a schematic diagram of the present invention for implementing N spot lattice intensity and position distribution using both DMD and SLM;
FIG. 6 is a schematic diagram of the present invention for implementing a high uniformity arbitrary curved surface structure based on parallel gray scale lithography;
in the figure, 1-femtosecond laser light source, 2-beam expander, 3-first mirror, 4-digital micromirror array DMD, 5-first convex lens, 6-second convex lens, 7-second mirror, 8-spatial light modulator SLM, 9-third mirror, 10-third convex lens, 11-fourth convex lens, 12-fourth mirror, 13-square adjustable diaphragm, 14-microlens array MLA, 15-fifth convex lens, 16-dichroic mirror, 17-objective lens, 18-precision displacement stage, 19-sixth convex lens, 20-CCD.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not limiting.
As shown in fig. 1, the present invention provides a multi-lattice generating and independently controlled two-photon parallel direct writing device, which includes a femtosecond laser pulse 1, a beam expander 2, a first mirror 3, a digital micromirror array DMD4, a first convex lens 5, a second convex lens 6, a second mirror 7, a spatial light modulator SLM8, a third mirror 9, a third convex lens 10, a fourth convex lens 11, a fourth mirror 12, a square adjustable diaphragm 13, a microlens array MLA14, a fifth convex lens 15, a dichroic mirror 16, an objective lens 17, a precision displacement stage 18, and a sixth convex lens 19, a CCD20 disposed at the reflecting end of the dichroic mirror 16, which are sequentially disposed in the light advancing direction.
The DMD4 is configured to perform amplitude modulation on an incident light spot, specifically, the DMD4 equally divides an effective pixel area into n×n units, one unit corresponds to one light spot, and performs independent on-off state switching on m×m micromirrors contained in each unit of the DMD4, so as to independently regulate and control the intensity and uniformity of the light spot of each unit.
The spatial light modulator SLM8 performs phase modulation on an incident light spot, specifically: the spatial light modulator SLM8 equally divides the effective pixel area into n×n cells, each cell containing m×m liquid crystal cells, each liquid crystal cell of each cell of the spatial light modulator SLM8 corresponds to m×m pixels of each cell of the digital micromirror array DMD4 one by one, and the wavefront of each cell spot is independently regulated by controlling the m×m liquid crystal cells in each cell of the spatial light modulator SLM 8.
The first convex lens 5 and the second convex lens 6 form a 4F system for imaging the light field on the DMD4 to the spatial light modulator SLM8, and the focal lengths F1 and F2 of the first convex lens 5 and the second convex lens 6 satisfy F1/F2=d D /d S Wherein d is D 、d S Pixel pitch of the digital micromirror array DMD4 and the spatial light modulator SLM8, respectively; the positions and attitudes of the digital micromirror array DMD4 and the spatial light modulator SLM8 are adjusted so that each unit spot coincides with each unit area on the spatial light modulator SLM8 one by one after the light beam passes through the 4F system.
The third convex lens 10 and the fourth convex lens 11 form a second 4F system for imaging the light field on the spatial light modulator SLM8 onto the focal plane of the microlens array MLA14, and the focal lengths F3 and F4 of the third convex lens 10 and the fourth convex lens 11 satisfy f3/f4=m×d S /d M Wherein d is M Microlens spacing for MLA 14; the lateral position of the microlens array MLA14 is adjusted so that each unit light spot corresponds to each microlens of the microlens array MLA14 one by one.
The first mirror 3 and the second mirror 7 are used for adjusting the incident angle of the digital micromirror array DMD4 and the spatial light modulator SLM8, respectively, wherein the incident angle of the spatial light modulator SLM8 is controlled within 10 °.
The microlens array MLA14 comprises N×N microlenses for focusing incident N×N unit light spots, one unit light spot corresponding to each microlens, and at most generating an N×N focal array on the focal plane of the MLA (14); the wavefront of each unit light spot is modulated by a Spatial Light Modulator (SLM) (8), and the drop point position of each focus near the focus of the corresponding microlens optical axis is independently controlled.
The square adjustable diaphragm 13 is used for limiting the size of a light spot incident to the micro lens array MLA14, and the caliber of the square adjustable diaphragm 13 is the size of the effective area of the micro lens array MLA 14.
The fifth convex lens 15 and the micro lens array MLA14 form a third 4F system, the focal array generated by the micro lens array MLA14 is changed into parallel light transmitted at different angles after passing through the fifth convex lens 15, and light spot overlapping is realized at the entrance pupil plane of the objective lens 17, and finally, a parallel direct writing light spot lattice is formed by focusing on the focal plane of the objective lens 17.
According to the invention, through a DMD, SLM, MLA square adjustable diaphragm and convex lens combined imaging system, light spots generate light spot lattices on the focal plane of the MLA through the characteristics of the MLA, the lattices are finally transmitted to the focal plane of an objective lens through the imaging system to carry out two-photon parallel photoetching, and simultaneously, the DMD and the SLM are respectively used for independently controlling the intensity and the position of each light spot, so that the high-flux super-resolution flexible processing of a high-uniformity arbitrary curved surface structure and a true three-dimensional microstructure can be realized.
The working process of the device of the invention is as follows: the femtosecond laser pulse 1 expands the light spot through the beam expander 2, then adjusts the incidence angle of the light beam to the DMD4 through the first reflector 3, and carries out amplitude modulation to the incidence light field through the DMD4, as shown in figure 2, the DMD4 equally divides the effective pixel area into N x N units, one unit corresponds to one light spot, the m x m micromirrors contained in each unit of the DMD4 are independently switched on and off, the independent regulation and control of the light spot intensity and uniformity of each unit is realized, the light beam emitted from the DMD4 is imaged on the SLM8 through the first (the first convex lens 5 and the second convex lens 6) and the second reflector 7 of the 4F system, the second reflector 7 is used for adjusting the incidence angle of the light beam to the SLM8, and carries out phase modulation to the incidence light field through the SLM8, as shown in figure 2, the SLM8 equally divides the effective pixel area into N x N units, each unit contains m x m liquid crystal cells, each liquid crystal cell of each unit of the SLM8 corresponds to m x m pixels of each unit of the DMD4 one by one, independent wave front modulation of each unit light spot is realized by controlling the m x m liquid crystal cells in each unit of the SLM8, a proper 4F system parameter is selected, the positions and the attitudes of the DMD4 and the SLM8 are finely regulated, after light beams pass through the 4F system, each unit light spot is overlapped with each unit area on the SLM8 one by one, the light beams emitted from the SLM8 are incident on the MLA14 through a third reflector 9, a second 4F system (a third convex lens 10 and a fourth convex lens 11), a fourth reflector 12 and a square adjustable diaphragm 13, the square adjustable diaphragm 13 is used for limiting the size of the light spot incident on the MLA14, the size of the light spot incident on the MLA14 is just consistent with the range of the effective micro mirror of the MLA14, a proper 4F system two parameters are selected, and the transverse position of the MLA14 is finely regulated, each micromirror of the MLA14 corresponds to an incident unit light spot respectively, a focusing light spot lattice is obtained on the focal plane of the MLA14, the lattice number is equal to the number N multiplied by N of the MLA14 micro lenses, and as the wave fronts of the light spots of each unit are different, each unit light spot after passing through the MLA14 is focused on the focal plane of the MLA14 at different offset angles, the fifth convex lens 15 and the MLA14 form a 4F system, each unit parallel light beam emitted from the fifth convex lens 15 sequentially passes through the dichroic mirror 16 and the objective lens 17 at different angles and is refocused respectively on the focal plane of the objective lens 17 to obtain a high-parallel number two-photon direct writing lattice, and the high-throughput super-resolution flexible processing of a high-uniformity arbitrary curved surface structure and a true three-dimensional microstructure can be realized by combining independent control of the intensity and the position distribution of each light spot by the DMD4 and the SLM8, and the generated fluorescence is reflected by the objective lens 17 and the dichroic mirror 16 and focused on the CCD20 for imaging.
The device part parameter setting of the invention exemplifies: assuming that the number of microlenses of the MLA14 is 100×100 and the pitch of the microlenses is 150 μm, the effective area of the MLA14 is 15mm×15mm, the aperture of the square adjustable diaphragm 13 is adjusted to 15mm×15mm, the resolution of the SLM8 is 1272×1024, the size of the liquid crystal cell is 12.5 μm×12.5 μm, and 10×10 pixels of the SLM8 are one unit, each unit corresponds to one microlens of the MLA14, that is, 125 μm×125 μm of the SLM8 corresponds to one 150 μm×150 μm of the microlens of the MLA14, the effective area of the SLM8 is 12.5mm×125mm, and the calculation formula F3/F4=m×d is calculated according to the focal lengths of the third convex lens 10 and the fourth convex lens 11 of the 4F system two third convex lenses 10 and the fourth convex lens 11 S /d M F3/f4=0.83; assuming that the resolution of DMD4 is 1920×1080, the pixel pitch is 10.8 μm, and 10×10 pixels of DMD4 correspond to 10×10 pixels on SLM8, the effective utilization area of DMD4 is 10.8mm×10.8mm, and the focal length calculation formula f1/f2=d according to the first convex lens 5 and the second convex lens 6 of the 4F system D /d S It is found that f1/f2=0.864 means that the diameter of the circular spot of the femtosecond laser beam used in the DMD4 is 10.8mm×=15.27 mm, and the caliber of the femtosecond laser beam after being expanded is larger than the diameter.
The adjustment of the intensity and uniformity of each light spot in the lattice is realized by the following steps: for single light spot intensity control, the m×m pixels on the DMD4 correspond to one light spot, and the control can be realized by uniformly closing or opening part of the micromirrors of the m×m micromirrors, and fig. 3 is a schematic diagram of controlling the intensity distribution of the processing lattice by modulating the light spot dose of each unit by the DMD 4; for uniformity control of a single spot, it can be achieved by turning off part of the micromirrors at high intensity or turning on part of the micromirrors at low intensity, and if the intensity distribution of a spot in the lattice is gaussian, then a uniform spot can be obtained by turning off more micromirrors in m×m micromirrors closer to the central area.
Quantitative description of the relationship between the incident wavefront variation and the drop point position deviation on the MLA focal plane: fig. 4 is a schematic diagram of the imaging principle of the MLA14 microlens array. For a single microlens, a unit spot with a planar wavefront (solid parallel lines) would be normally incident on the microlens and focused to a focal position on the optical axis of the lens (reference spot position), whereas a distorted wavefront (virtual parallel lines) which is not normally incident would be focused to a position offset from the reference spot, and the offset angle could be calculated geometrically. Assuming that the wavefront slope incident on the MLA14 is α, the maximum displacement angle (also the maximum wavefront slope) α of the incident unit beam with respect to the optical axis of each microlens is such that each spot of the focal plane of the MLA14 moves within the respective active area without overlapping the active areas of the other spots max =h/f M =D/2/f M H is the maximum displacement distance of the light spot on the focal plane of the MLA14, D is the diameter of the micro lens, f M Is the focal length of the microlens. The DMD4 controls the distribution of the spot lattice intensity, and simultaneously controls the wavefront of each unit spot incident on the MLA14 through the SLM8, and also controls the distribution of the positions of each spot of the lattice on the focal plane, as shown in fig. 5.
High-flux super-resolution two-photon direct writing realization of high-uniformity arbitrary curved surface structure and true three-dimensional microstructure based on gray level lithography: as shown in fig. 6, it is assumed that a heart-shaped curved surface structure is processed, a high-brightness region corresponds to a curved surface vertex, and a low-brightness region corresponds to a curved surface lower point; when the structure is processed by the light spot lattice, the processing area is partitioned according to the active area of each light spot, meanwhile, two-photon polymerization is realized by adopting different light spot intensities for each unit area, the light spot intensity of the curved surface vertex is highest, the light spot intensity is lower towards the edge of the heart-shaped structure, meanwhile, in each unit area, the wave front of each light spot is changed through the SLM8, the light spot can be controlled to scan along any track in each active area, and the light spot intensity is synchronously modulated through the DMD4, so that the high-uniformity gray scale photoetching of any curved surface structure and three-dimensional microstructure is realized, and meanwhile, the advantages of high flux and super resolution are achieved.
It will be readily appreciated by those skilled in the art that the foregoing description is merely a preferred embodiment of the invention and is not intended to limit the invention, but any modifications, equivalents, improvements or alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (7)
1. A two-photon parallel direct writing device based on multi-lattice generation and independent control is characterized in that: the device comprises a femtosecond laser pulse (1), a beam expander (2), a first reflecting mirror (3), a digital micro-mirror array DMD (4), a first convex lens (5), a second convex lens (6), a second reflecting mirror (7), a Spatial Light Modulator (SLM) (8), a third reflecting mirror (9), a third convex lens (10), a fourth convex lens (11), a fourth reflecting mirror (12), a square adjustable diaphragm (13), a micro-lens array MLA (14), a fifth convex lens (15), a dichroic mirror (16), an objective lens (17), a precision displacement table (18) and a sixth convex lens (19) and a CCD (20) which are sequentially arranged in the light advancing direction;
the digital micro mirror array DMD (4) is used for carrying out amplitude modulation on incident light spots, specifically, the DMD (4) equally divides an effective pixel area into N multiplied by N units, one unit corresponds to one light spot, and the m multiplied by m micro mirrors contained in each unit of the digital micro mirror array DMD (4) are switched between on and off states independently, so that the intensity and uniformity of the light spots of each unit are regulated and controlled independently;
the Spatial Light Modulator (SLM) (8) carries out phase modulation on an incident light spot, and the method specifically comprises the following steps: the effective pixel area is equally divided into N multiplied by N units by a Spatial Light Modulator (SLM) (8), each unit comprises m multiplied by m liquid crystal cells, each liquid crystal cell of each unit of the Spatial Light Modulator (SLM) (8) corresponds to m multiplied by m pixels of each unit of a digital micromirror array (DMD) (4) one by one, and the wave front of each unit light spot is independently regulated and controlled by m multiplied by m liquid crystal cells in each unit of the Spatial Light Modulator (SLM) (8);
the first convex lens (5) and the second convex lens (6) form a 4F system for imaging a light field on the DMD (4) to the spatial light modulator SLM (8), and focal lengths F1 and F2 of the first convex lens (5) and the second convex lens (6) satisfy F1/F2=d D /d S Wherein d is D 、d S Pixel pitch of the digital micromirror array DMD (4) and the spatial light modulator SLM (8), respectively; and adjusting the positions and the attitudes of the digital micromirror array (DMD) (4) and the Spatial Light Modulator (SLM) (8) to ensure that after a light beam passes through a 4F system, light spots of all units are overlapped with all unit areas on the Spatial Light Modulator (SLM) (8) one by one.
2. The two-photon parallel write-through device based on multi-lattice generation and independent control according to claim 1, wherein: the third convex lens (10) and the fourth convex lens (11) form a second 4F system for imaging the light field on the spatial light modulator SLM (8) onto the focal plane of the micro lens array MLA (14), and the focal lengths F3 and F4 of the third convex lens (10) and the fourth convex lens (11) satisfy F3/F4=m×d S /d M Wherein d is M Microlens spacing for MLA (14); and adjusting the transverse position of the micro lens array MLA (14) to enable each unit light spot to correspond to each micro lens of the micro lens array MLA (14) one by one.
3. The two-photon parallel write-through device based on multi-lattice generation and independent control according to claim 2, wherein: the first reflecting mirror (3) and the second reflecting mirror (7) are respectively used for adjusting the incidence angles of the digital micro mirror array (DMD) and the Spatial Light Modulator (SLM) (8), wherein the incidence angle of the Spatial Light Modulator (SLM) (8) is controlled within 10 degrees.
4. A two-photon parallel write-through device based on multi-lattice generation and independent control as claimed in claim 3, wherein: the micro lens array MLA (14) comprises N multiplied by N micro lenses, is used for focusing incident N multiplied by N unit light spots, one unit light spot corresponds to one micro lens, and can generate an N multiplied by N focus array at most on the focal plane of the MLA (14); the wavefront of each unit light spot is modulated by a Spatial Light Modulator (SLM) (8), and the drop point position of each focus near the focus of the corresponding microlens optical axis is independently controlled.
5. The two-photon parallel write-through device based on multi-lattice generation and independent control according to claim 4, wherein: the square adjustable aperture (13) is used for limiting the size of a light spot incident to the micro lens array MLA (14), and the caliber of the square adjustable aperture (13) is the size of the effective area of the micro lens array MLA (14).
6. The two-photon parallel write-through device based on multi-lattice generation and independent control according to claim 5, wherein: the fifth convex lens (15) and the micro lens array MLA (14) form a 4F system III, a focus array generated by the micro lens array MLA (14) is changed into parallel light transmitted at different angles after passing through the fifth convex lens (15), spot overlapping is realized at the entrance pupil plane of the objective lens (17), and finally a parallel direct writing spot lattice is formed by focusing on the focal plane of the objective lens (17).
7. A two-photon parallel direct writing method based on multi-lattice generation and independent control for realizing the two-photon parallel direct writing device based on multi-lattice generation and independent control according to any one of claims 2-6, comprising the following steps: the femtosecond laser pulse (1) is incident on a digital micro-mirror array DMD (4) after passing through a beam expander (2) and a first reflecting mirror (3), the digital micro-mirror array DMD (4) carries out amplitude modulation on an incident light spot, then the light spot is imaged on a spatial light modulator SLM (8) through a 4F system and a second reflecting mirror (7), the light spot is subjected to pure phase modulation through the spatial light modulator SLM (8), the light spot emitted from the spatial light modulator SLM (8) is sequentially incident on a micro-lens array MLA (14) through a third reflecting mirror (9), a 4F system II, a fourth reflecting mirror (12) and a square adjustable diaphragm (13), a focus lattice is generated on a micro-lens array MLA (14) focal plane, the lattice is then imaged on a focal plane of a fifth convex lens (15), a dichroic mirror (16) and an objective lens (17), finally the light spot is imaged on a focal plane of the objective lens (17) on a precise displacement table (18), high-flux super-resolution two-photon direct writing processing is carried out, and the generated fluorescence is imaged on a dichroic mirror (20) through the objective lens (17), the dichroic mirror (16) and a sixth convex lens (19) is focused on a CCD (20).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110046632.1A CN112596349B (en) | 2021-01-14 | 2021-01-14 | Two-photon parallel direct writing device and method based on multi-lattice generation and independent control |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110046632.1A CN112596349B (en) | 2021-01-14 | 2021-01-14 | Two-photon parallel direct writing device and method based on multi-lattice generation and independent control |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112596349A CN112596349A (en) | 2021-04-02 |
| CN112596349B true CN112596349B (en) | 2024-01-19 |
Family
ID=75207218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110046632.1A Active CN112596349B (en) | 2021-01-14 | 2021-01-14 | Two-photon parallel direct writing device and method based on multi-lattice generation and independent control |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112596349B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113050390A (en) * | 2021-04-06 | 2021-06-29 | 上海大学 | Micro-nano three-dimensional structure preparation system and method based on multi-scale multi-photon lithography technology |
| CN113189709A (en) * | 2021-04-19 | 2021-07-30 | 之江实验室 | Input optical signal generating device for optical fiber array and photoetching system |
| CN114019766B (en) * | 2021-10-28 | 2024-03-26 | 之江实验室 | Device for high-flux direct writing by using multi-beam independently controllable PPI lattice |
| CN115268061B (en) * | 2022-09-28 | 2023-03-28 | 中国科学技术大学 | Digital micro-reflector pure phase modulation implementation method and imaging method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110238546A (en) * | 2019-04-15 | 2019-09-17 | 清华大学 | A kind of system of the femtosecond laser processing array micropore based on spatial beam shaping |
| CN211149052U (en) * | 2020-01-08 | 2020-07-31 | 精微视达医疗科技（武汉）有限公司 | Confocal micro-endoscope based on spatial light modulator and digital micromirror array |
| CN111538164A (en) * | 2020-07-09 | 2020-08-14 | 之江实验室 | Hollow light spot array parallel regulation and control device based on digital micromirror device |
| CN111856892A (en) * | 2020-08-20 | 2020-10-30 | 之江实验室 | Parallel super-resolution three-dimensional direct writing device |
-
2021
- 2021-01-14 CN CN202110046632.1A patent/CN112596349B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110238546A (en) * | 2019-04-15 | 2019-09-17 | 清华大学 | A kind of system of the femtosecond laser processing array micropore based on spatial beam shaping |
| CN211149052U (en) * | 2020-01-08 | 2020-07-31 | 精微视达医疗科技（武汉）有限公司 | Confocal micro-endoscope based on spatial light modulator and digital micromirror array |
| CN111538164A (en) * | 2020-07-09 | 2020-08-14 | 之江实验室 | Hollow light spot array parallel regulation and control device based on digital micromirror device |
| CN111856892A (en) * | 2020-08-20 | 2020-10-30 | 之江实验室 | Parallel super-resolution three-dimensional direct writing device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112596349A (en) | 2021-04-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112596349B (en) | Two-photon parallel direct writing device and method based on multi-lattice generation and independent control | |
| JP5287113B2 (en) | Illumination optical system, exposure apparatus, and device manufacturing method | |
| JP5287114B2 (en) | Illumination optical system, exposure apparatus, and device manufacturing method | |
| TW472176B (en) | Control of the distribution of lighting in the exit pupil of an EUV lighting system | |
| CN112666803B (en) | Parallel direct writing device based on edge light inhibition dot matrix generation and independent control | |
| CN112859534B (en) | Parallel direct writing device and method based on edge light inhibition array | |
| CN104656379A (en) | Illumination system of a microlithographic projection exposure apparatus | |
| JP2006065348A (en) | Method for shaping irradiance profile using optical element having positive and negative optical power | |
| CN111856892A (en) | Parallel super-resolution three-dimensional direct writing device | |
| KR20100099157A (en) | Spatial light modulation unit, illumination optical apparatus, exposure apparatus, and device manufacturing method | |
| KR102066825B1 (en) | Illumination optical assembly, exposure device, and device manufacture method | |
| US11067953B2 (en) | Apparatus and method for generating an optical pattern from image points in an image plane | |
| CN109283805A (en) | Laser direct-writing device based on Darman raster | |
| JP5700272B2 (en) | Illumination optical system, exposure apparatus, and device manufacturing method | |
| CN109343162A (en) | Laser direct-writing device and its laser direct writing method based on super lens | |
| CN103869632A (en) | Lighting model generating device for high-numerical-aperture projection lithography system | |
| US20180117709A1 (en) | Method and device for locally defined machining on the surfaces of workpieces using laser light | |
| WO2010044307A1 (en) | Illumination optical system, aligner, and process for fabricating device | |
| JP2007080953A (en) | Lighting system and exposure apparatus | |
| US10459343B2 (en) | Illumination device | |
| CN114019766B (en) | Device for high-flux direct writing by using multi-beam independently controllable PPI lattice | |
| CN114019763B (en) | Parallel direct writing device based on ten thousand independently controllable laser dot matrixes | |
| KR101591155B1 (en) | Illumination system of a microlithographic projection exposure apparatus | |
| CN117950283A (en) | Super-resolution gray scale inscribing device and method based on independent regulation and control of thousand beams of focal spots | |
| KR20020005975A (en) | An illumination optical apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |