CN114019763B - Parallel direct writing device based on ten thousand independently controllable laser dot matrixes - Google Patents

Parallel direct writing device based on ten thousand independently controllable laser dot matrixes Download PDF

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CN114019763B
CN114019763B CN202111120476.5A CN202111120476A CN114019763B CN 114019763 B CN114019763 B CN 114019763B CN 202111120476 A CN202111120476 A CN 202111120476A CN 114019763 B CN114019763 B CN 114019763B
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lattice
light
lens
micro
array
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CN114019763A (en
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匡翠方
杨顺华
孙秋媛
丁晨良
魏震
刘锡
刘旭
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Zhejiang University ZJU
Zhejiang Lab
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Zhejiang University ZJU
Zhejiang Lab
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2051Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2051Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2057Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using an addressed light valve, e.g. a liquid crystal device
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/70391Addressable array sources specially adapted to produce patterns, e.g. addressable LED arrays
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/704162.5D lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display

Abstract

The invention discloses a parallel direct writing device based on ten thousand beams of independently controllable laser lattices, which mainly comprises four identical light paths, wherein each light path comprises a core element digital micromirror array DMD and a micro lens array MLA, and is used for generating thousands of beams of independently controllable writing lattices, the DMD in the light path equally divides an effective pixel area into M multiplied by N sub-arrays, one sub-array corresponds to one sub-light spot, the M multiplied by N sub-light spot emitted from the DMD is overlapped with the M multiplied by N micro lens of the MLA in space to generate an M multiplied by N thousands of beams of focal arrays, and finally the M multiplied by N thousands of focal arrays are imaged on an objective focal plane, and finally the generation of ten thousands of writing lattices is realized through the splicing of four thousands of beams of lattices, so that the device can rapidly process high-quality complex three-dimensional microstructures and can be applied to the fields of super-resolution lithography.

Description

Parallel direct writing device based on ten thousand independently controllable laser dot matrixes
Technical Field
The invention belongs to the field of micro-nano processing, and particularly relates to a parallel direct writing device and method based on ten-thousand laser lattice generation and independent control.
Background
The two-photon laser direct writing technology is always a research hot spot in the three-dimensional micro-nano processing technology by virtue of the characteristics of high resolution, true three-dimensional processing capability, low thermal influence, wide processing materials and the like. Along with the trend of the laser direct writing technology to industrial application, how to realize high-speed, complex and large-area writing while realizing high precision is a key problem which needs to be solved urgently by the laser direct writing technology at present.
In order to effectively improve the laser direct writing efficiency, researchers try to start with improving an optical processing method, namely, parallel direct writing is performed by adopting multiple beams of light, and the processing speed is doubled. Document [ opt. Lett. 45, 4698-4701 (2020) ] uses a spatial light modulator SLM to achieve 12 foci for femtosecond two-photon direct writing; document [ Nature Communications, 2019, 10 (1) ] utilizes a high-speed digital micromirror array DMD (22.7 kHZ) to generate 3 foci whose positions are independently controllable for parallel processing, achieving the highest two-photon direct writing speed at the time. Although each beam can be independently controlled through dynamic coding by the parallel photoetching technology based on the SLM or the DMD, the number of the realized beam arrays is small, and the parallel photoetching technology still is a short plate for limiting the processing speed when a complex structure is processed, particularly the refreshing frequency of the SLM is low, and the improvement of the writing speed is further limited. Document [ Advanced Functional Materials, 2020,30,1907795] uses a diffraction spectroscopic element DOE to produce a 3×3 femtosecond laser inscription array, and a diffraction optical element has the potential to produce array dots, but the number of arrays realized is small, and each focus cannot be controlled independently. The parallel processing method based on the micro lens array [ Laser & Photonics Reviews, 2020, 14] and the interference lattice [ Applied Sciences, 2021, 11 (14): 6559] can realize large-area rapid Laser direct writing, but because the light spots cannot be controlled independently, the consistency of the lattice strength, the quality of sub-light spots and the like are difficult to ensure, only a single repeated structure can be processed, the uniformity error of a processing periodic structure is larger, and the processing precision is in the micrometer level.
In summary, the current hundred-beam or even thousand-beam laser lattices are difficult to realize independent regulation and control, and the lattice strength consistency and the sub-light spot quality of the laser lattices are rapidly deteriorated along with the improvement of the number of the sub-light spots of the lattices, so that the high-throughput processing requirement of a complex large-area three-dimensional structure is difficult to meet.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a parallel direct writing device and a parallel direct writing method based on ten thousand laser lattices, wherein the device firstly utilizes a digital micromirror array (DMD) and a Micro Lens Array (MLA) of a core element to generate thousand light spot arrays which are independently controllable, and generates four thousand light spot arrays through four light paths with the same structure, and the spatial positions of the four light spot arrays are regulated to splice the four light spot arrays to form ten thousand light spot arrays which are independently controllable, so that high-flux super-resolution parallel flexible processing of a high-uniformity true three-dimensional complex microstructure can be realized.
The technical scheme of the invention is as follows:
the utility model provides a parallel direct writing device based on ten thousand independently controllable laser dot matrix production, contains two way light, adopts the femto second laser source of different wavelength respectively, namely first light source and second light source, and first light source is divided into light beam one and light beam two through first half-wave plate and first polarization beam splitter PBS, and second light source is divided into light beam three and light beam four through second half-wave plate and second polarization beam splitter PBS, and four light beam later gets into light path one, light path two, light path three and light path four respectively, and four light path structures are identical: the system comprises a first reflecting mirror, a digital micromirror array (DMD), a first convex lens, a second reflecting mirror, a micro lens array, a third reflecting mirror, a fourth reflecting mirror and a first sleeve lens which are sequentially arranged according to the light advancing direction, four light paths respectively convert four light beams into laser lattices of which the thousand beams are independently controllable, namely a lattice I, a lattice II, a lattice III and a lattice IV, the lattice I and the lattice II are subjected to beam combination through a third Polarization Beam Splitter (PBS), the beams are incident on a first dichroic mirror through a second sleeve lens after being combined, the lattice III and the lattice IV are subjected to beam combination through a fourth Polarization Beam Splitter (PBS), the beams are incident on a first dichroic mirror through a third sleeve lens after being combined, the first dichroic mirror is subjected to beam combination through reflection of the lattice I and the lattice II and transmission of the lattice III and the lattice IV, the four lattices are sequentially subjected to beam combination through the fourth sleeve lens, the second dichroic mirror and the objective lens, finally the four lattices are formed on the focal plane of the objective lens in an imaging mode, the ten-thousand laser lattices are formed, the high-beam laser lattices with a complex structure are combined, the high-flux generated by combining the movement of a displacement table is sequentially, and the high-flux laser light is sequentially written on the CCD, and the second dichroic mirror and the fluorescence is subjected to the second dichroic mirror to be subjected to reflection through the lens.
Preferably, the first light source and the second light source are two femtosecond light sources with wavelengths only differing by a few nanometers, and photoresist exists to enable the two light sources to irradiate simultaneously to generate polymerization reaction, and other parameters such as pulse width, power, repetition frequency, spot caliber and the like of the two light sources are completely consistent except for the wavelength difference.
Preferably, the first half-wave plate and the first polarization beam splitter PBS divide the first light source into a first light beam and a second light beam which have mutually perpendicular polarization directions and have equal energy, and the second half-wave plate and the second polarization beam splitter PBS divide the second light source into a third light beam and a fourth light beam which have mutually perpendicular polarization directions and have equal energy.
Preferably, the four optical paths have completely identical structures and are all used for generating thousands of independently controllable laser lattices, and the generation principle is as follows: the angle of light incidence of the light beam to the digital micro-mirror array DMD is regulated by the first reflecting mirror, so that the light is emitted perpendicular to the digital micro-mirror array DMD window, the digital micro-mirror array DMD is used for carrying out amplitude modulation on the incidence light spots, specifically, the digital micro-mirror array DMD pixels are partitioned by the digital micro-mirror array DMD micro-mirror switch control, the digital micro-mirror array DMD pixels are partitioned into M multiplied by N subarrays, micro-mirrors in the subarrays are in an on state, the micro-mirrors among the subarrays are in an off state, the light cannot be reflected in the required direction, the incidence laser is divided into M multiplied by N light spot arrays after being subjected to the amplitude modulation of the digital micro-mirror array DMD, one subarray corresponds to one subarray, the M multiplied by N light spot arrays emitted from the digital micro-mirror array DMD sequentially pass through a 4F system and a second reflecting mirror formed by a first convex lens and a second convex lens, and are imaged on the micro-lens array MLA, the subarray aperture of the digital micro-mirror array DMD is not larger than the micro-mirror array MLA, the micro-mirror array MLA is ensured to be in a reasonable size, the periods of the subarray apertures of the micro-mirror array MLA are ensured to be distributed with the micro-lens array MLA and the micro-lens array MLA have a consistent period with the M multiplied by N light spot array lens on the MLA, and the focal plane is formed on the micro-lens array lens array and the focal plane is consistent with the array lens.
Preferably, the DMD comprises m×n sub-arrays, each sub-array comprises m×m micromirrors, and each sub-array corresponds to one sub-light spot, and the m×m micromirrors are switched between on and off states independently, so as to realize independent control of intensity, switching, and light spot energy distribution of each sub-light spot, wherein the implementation mode specifically comprises: the m multiplied by m micro mirrors are all switched to the off state, namely the corresponding sub light spots are closed; compared with other sub-light spots, the intensity of a certain sub-light spot is too high, and part of peripheral micro mirrors of m multiplied by m micro mirrors corresponding to the sub-light spot can be closed, so that the light spot energy of the sub-light spot is reduced independently; when the energy distribution of the sub-light spots is uneven, partial micro mirrors corresponding to the area with overlarge light spot energy can be uniformly closed in m multiplied by m micro mirrors, so that the energy of the area of the sub-light spots is reduced, and the energy distribution of the sub-light spots is homogenized.
Preferably, the first lattice and the second lattice are combined through a third polarization beam splitter PBS, and the combined beams pass through a second sleeve lens; the third lattice and the fourth lattice are combined through a fourth polarization beam splitter PB, and the combined beams pass through a third sleeve lens; the first dichroic mirror reflects the wavelength of the light source and transmits the wavelength of the light source 2; the two first sleeve lenses of the light path where the first lattice and the second lattice are located respectively form a 4F system with the second sleeve lens, so that the first lattice and the second lattice are combined and reflected by the first dichroic mirror and then imaged on the front focal plane of the fourth sleeve lens; the beam-combined dot matrix III and dot matrix IV are transmitted through a first dichroic mirror and then are combined with the dot matrix I and the dot matrix II, two first sleeve lenses of the light path where the dot matrix III and the dot matrix IV are positioned respectively form a 4F system with a third sleeve lens, and the dot matrix III and the dot matrix IV are imaged to the front focal plane of a fourth sleeve lens through the 4F system respectively; and finally, imaging four lattices of the front focal surface of the fourth sleeve lens on the focal surface of the objective lens through an imaging system formed by the fourth sleeve lens and the objective lens. The first lattice (III) and the second lattice (IV) are identical except that the polarization directions are perpendicular to each other, and other parameters (such as intensity, period, array size, etc.) are identical except that the wavelengths of the first lattice (II) and the third lattice (IV) are different by a few nanometers.
Preferably, the third reflecting mirror and the fourth reflecting mirror are used for adjusting the space position of the dot matrix, so that the dot matrix II and the dot matrix I are staggered by 1/2 dot matrix period in the x direction, the dot matrix III and the dot matrix I are staggered by 1/2 dot matrix period in the y direction, the dot matrix IV and the dot matrix I are staggered by 1/2 dot matrix period in the x direction and the y direction, finally, the four dot matrixes are spliced on the focal plane of the objective lens in the space distribution mode to form a ten-thousand-beam dot matrix, the period of the dot matrix is 1/2 of the period of the dot matrix I, and the intensity, the switch and the energy distribution of each sub-light spot of the dot matrix are independently controllable.
The invention has the following technical effects:
the invention utilizes four MLAs to generate four thousand-beam lattices, realizes ten-beam writing arrays through spatial splicing, realizes independent control of the light spot intensity, the switch and the energy distribution of the lattices through the DMD, has high intensity uniformity of the ten-beam lattices, can flexibly switch the light spot of the lattices, optimizes the light spot quality, and has the advantages of high processing flux, flexible writing of any complex three-dimensional structure, good uniformity of writing structure, high resolution and the like when used for writing.
Drawings
FIG. 1 is a schematic diagram of a parallel write-through device based on ten-thousand-beam independently controllable laser lattice generation;
FIG. 2 is a schematic diagram of the present invention for designing DMD pixel sub-array distribution to achieve spatial matching with MLA microlenses;
FIG. 3 is a schematic diagram of the present invention for implementing independent switching of spot of a matrix by integrally switching micromirrors within a DMD sub-array;
FIG. 4 is a schematic diagram of the invention for independently controlling the spot intensity of a dot matrix sub-array by turning off some micromirrors at the periphery of the sub-array of the DMD;
FIG. 5 is a schematic diagram of sub-spot energy distribution homogenization by uniformly turning off a portion of micromirrors in a sub-array of the DMD corresponding to a high intensity region in the sub-spot in accordance with the present invention;
FIG. 6 is a schematic diagram of a ten thousand beam inscription array implemented by four thousand beam lattice space concatenation in accordance with the present invention.
In the figure, 1-first light source, 2-second light source, 3-first half-wave plate, 4-first polarizing beam splitter PBS, 5-second half-wave plate, 6-second polarizing beam splitter PBS, 7-first mirror, 8-digital micromirror array DMD, 9-first convex lens, 10-second convex lens, 11-second mirror, 12-microlens array MLA, 13-third mirror, 14-fourth mirror, 15-first sleeve lens, 16-third polarizing beam splitter PBS, 17-fourth polarizing beam splitter PBS, 18-second sleeve lens, 19-third sleeve lens, 20-first dichroic mirror, 21-fourth sleeve lens, 22-second dichroic mirror, 23-objective lens, 24-displacement stage, 25-third convex lens, 26-CCD.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not limiting.
As shown in fig. 1, the invention provides a parallel direct writing device based on ten-thousand-beam independently controllable laser lattice generation, which mainly comprises two paths of light, namely a first light source 1 and a second light source 2, which are femtosecond laser sources with different wavelengths, wherein the first light source 1 is divided into a first light beam and a second light beam through a first half-wave plate 3 and a first polarization beam splitter PBS 4, the second light source 2 is divided into a third light beam and a fourth light beam through a second half-wave plate 5 and a second polarization beam splitter PBS 6, and then the four light beams enter a first light path, a second light path, a third light path and a fourth light path respectively, and the structures of the four light paths are completely identical: the three-dimensional laser optical system comprises a first reflecting mirror 7, a digital micro mirror array DMD 8, a first convex lens 9, a second convex lens 10, a second reflecting mirror 11, a micro lens array MLA12, a third reflecting mirror 13, a fourth reflecting mirror 14 and a first sleeve lens 15 which are sequentially arranged according to the light advancing direction, four light paths respectively convert four light beams into laser lattices of which the thousand beams are independently controllable, namely a lattice I, a lattice II, a lattice III and a lattice IV, the lattice I and the lattice II are subjected to beam combination through a third polarizing beam splitter PBS 16, the beams are incident on a first dichroic mirror 20 through a second sleeve lens 18, the lattice III and the lattice IV are subjected to beam combination through a fourth polarizing beam splitter PBS 17, the beams are incident on the first dichroic mirror 20 through a third sleeve lens 19 after being combined, the four lattices are sequentially combined through a fourth sleeve lens 21, a second dichroic mirror 22 and an objective lens 23, finally imaged on the surface of the lattice 23, the laser beams are formed into a three-dimensional laser light beam 24 through a third sleeve lens 19, and a three-dimensional laser light beam 24 is sequentially formed through the combination of the movement of the third dichroic mirror and the third sleeve lens 20, and the three-dimensional laser light system is combined to form a complex laser light displacement CCD lens 25, and the three-dimensional laser light system is combined to a three-dimensional projection lens 25, and a complex laser optical system is formed, and a three-dimensional laser optical system is moved to a three-dimensional laser system, and a three-dimensional laser system is moved to a laser system, and a laser system is.
The working process of the device of the invention is as follows:
(1) The first light source 1 is divided into an S-polarized light beam I and a P-polarized light beam II by the first half-wave plate 3 and the first polarization beam splitter 4, the first half-wave plate 3 is rotated to enable the energy of the light beam I and the energy of the light beam II to be equal, and the light beam I and the light beam II respectively enter a light path I and a light path II; the wavelengths of the second light source 2 and the first light source 1 are only different by a few nanometers, other parameters such as power, pulse width, repetition frequency, caliber and the like are completely consistent, the first light source 1 and the second light source 2 irradiate certain photoresist to simultaneously enable the photoresist to generate polymerization reaction, the second light source 2 is divided into an S polarized light beam III and a P polarized light beam IV through the second half wave plate 5 and the second polarization beam splitter 6, the second half wave plate 5 is rotated to enable the energy of the light beam III and the energy of the light beam IV to be equal, and the light beam III and the light beam IV subsequently enter the light path III and the light path IV respectively.
(2) The first to fourth optical paths have the same structure, and the first mirror 7, the digital micromirror array DMD 8, the first convex lens 9, the second convex lens 10, the second mirror 11, the microlens array MLA12, the third mirror 13, the fourth mirror 14, and the first sleeve lens 15 are sequentially arranged in the light transmission direction. The digital micro-mirror array DMD 8 has an angle requirement on incident light, and the first reflecting mirror 7 is used for adjusting the angle to enable the light to vertically exit along a window of the digital micro-mirror array DMD 8; the digital micro-mirror array DMD 8 carries out amplitude modulation on incident light to change emergent light into an MxN light spot array, the light spot array then forms a 4F system through a first convex lens 9 and a second convex lens 10, the light spot array is imaged on the front focal plane of the micro-lens array MLA12, the micro-mirror state distribution of the digital micro-mirror array DMD 8 is reasonably designed, when the MxN light spot array is incident on the micro-lens array MLA12, the MxN light spot array is overlapped with the MxN micro-lenses in a one-to-one mode in space, and an MxN focus array is formed on the focal plane of the micro-lens array MLA 12; the focal array then passes through a third mirror 13, a fourth mirror 14 and a first sleeve lens 15 in sequence, the third mirror 13 and the fourth mirror 14 being used to adjust the spatial position distribution of the focal array.
(3) The generation of the MxN light spot array is realized through the micromirror state distribution design of the digital micromirror array DMD 8, and the light spot array is precisely matched with the MxN microlenses of the microlens array MLA 12. Illustrating: because the digital micromirror array DMD 8 has square individual micromirrors and sub-micromirror arrays, it is recommended to use a microlens array MLA12 having square microlens edge profile; assuming that the DMD 8 resolution is 1920×1080 and the pixel period is 10.8 μm, the microlens array MLA12 employed contains 137×77 microlens arrays, the individual microlens sizes being 150 μm×150 μm; the micro lens array MLA12 size is used as a template to design the state distribution of the digital micro lens array DMD 8 micro mirrors, as shown in FIG. 2, each white dotted line box represents one micro lens of the micro lens array MLA12, each white-black square area represents one DMD micro mirror, and the two colors of white and black respectively represent that the micro mirrors are in the "on" state and the "off" state; designing a sub-micro mirror array of the digital micro mirror array DMD 8 to be 14×14, wherein m×m=10×10 micro mirrors in the middle of the sub-array are in an on state, two micro mirrors at the periphery are in an off state, one sub-array of the digital micro mirror array DMD 8 corresponds to one sub-light spot, and theoretically, the pixels of the digital micro mirror array DMD 8 can be divided into at most 137×77 sub-arrays (1920/14=137.1, 1080/14=77.1), namely, at most 137×77=10549 parallel light spots are generated, and the number of actually usable sub-light spots is lower than ten thousand in consideration of the loss of light spots at the edge of the array; since the digital micromirror array DMD 8 has a sub-array size of 14×10.8μm=151.2μm, which deviates from the MLA12 by 1.2 μm (1:1 imaging relationship is adopted between the digital micromirror array DMD 8 and the microlens array MLA 12), if the digital micromirror array DMD 8 is designed to have a micromirror state distribution in a periodic array, the situation that the sub-spots cover two microlenses of the microlens array MLA12 may occur, and each sub-spot cannot be confined within each microlens of the microlens array MLA 12. The position distribution and array spacing of each subarray of the DMD 8 can be finely adjusted step by referring to the micro-lens array MLA12 template, so that each subarray of the DMD 8 falls into each micro-lens of the micro-lens array MLA12, and the accurate matching of each micro-lens of the DMD 8 thousands-level subarray and each micro-lens of the MLA12 is finally designed.
(4) The independent regulation and control of the sub-light spots of the focal array of the micro lens array MLA12 are realized through the digital micro mirror array DMD 8, and the independent regulation and control of the intensity and the homogenization of the energy distribution of the sub-light spots are realized by the following specific modes: after the light spot array emitted by the digital micro-mirror array DMD 8 is spatially matched with each micro-lens of the micro-lens array MLA12, closing the corresponding sub-focus of the micro-lens array MLA12 by closing the m multiplied by m micro-lens of a certain sub-array of the digital micro-mirror array DMD 8, as shown in figure 3; when the intensity of a certain sub-focus is too high compared with other sub-focuses, partial peripheral micro mirrors of m multiplied by m micro mirrors of the digital micro mirror array DMD 8 sub-array corresponding to the sub-focus can be closed, and the light spot energy is reduced, as shown in fig. 4; when the energy distribution of the sub-focus is uneven, part of the micromirrors corresponding to the excessive light spot energy area can be uniformly closed in m×m micromirrors of the corresponding digital micromirror array DMD 8 sub-array, so that the energy of the sub-focus area is reduced, and the energy distribution of the sub-light spot is homogenized, as shown in fig. 5.
(5) The first lattice and the second lattice which are respectively emitted from the first light path and the second light path are combined through the third polarization beam splitter PBS 16, and the combined beams pass through the second sleeve lens 18 and are reflected by the first dichroic mirror 20; the third and fourth lattices emitted from the third and fourth light paths are combined by the fourth polarization beam splitter PBS 17, the combined light beams pass through the third sleeve lens 19, the first dichroic mirror 20 transmits the combined light beams with the first and second lattices, the four combined light beams pass through the fourth sleeve lens 21, the second dichroic mirror 22 and the objective lens 23 in sequence, thousands of lattices are formed on the focal surface of the objective lens 23, the four thousands of lattices are finally spliced into tens of thousands of lattices, and fluorescence generated during writing is reflected by the objective lens 23 and the second dichroic mirror 22 and imaged on the CCD 26 by the third convex lens 25.
(6) Imaging procedure of microlens array MLA12 focal array to focal plane lattice of objective lens 23: the front focal plane of the first sleeve lens 15 coincides with the back focal plane of the MLA 12; the two first sleeve lenses 15 of the light path where the first lattice and the second lattice are located respectively form a 4F system with the second sleeve lens 18, the first lattice and the second lattice are imaged to the back focal plane of the second sleeve lens 18 through the two 4F systems respectively, the back focal plane of the second sleeve lens 18 is overlapped with the front focal plane of the fourth sleeve lens 21, the fourth sleeve lens 21 and the objective lens 23 form a 4F system, and the lattice of the front focal plane of the fourth sleeve lens 21 is finally imaged to the focal plane of the objective lens 23; similarly, the two first sleeve lenses 15 of the light path where the third lattice and the fourth lattice are located and the third sleeve lens 19 respectively form a 4F system, the back focal plane of the third sleeve lens 19 coincides with the front focal plane of the fourth sleeve lens 21, and the third lattice and the fourth lattice are finally imaged on the focal plane of the objective lens 23.
(7) Splicing four thousand-beam lattices: the spatial position distribution of the thousand beams of lattices is regulated by the third reflecting mirror 13 and the fourth reflecting mirror 14, as shown in fig. 6, the second lattice and the first lattice are staggered by 1/2 lattice period in the x direction, the third lattice and the first lattice are staggered by 1/2 lattice period in the y direction, the fourth lattice and the first lattice are staggered by 1/2 lattice period in the x direction and the y direction, and finally the four lattices are spliced on the focal plane of the objective lens 23 to form ten thousand beams of lattices in the above spatial distribution mode, and the period of the lattices is 1/2 of the period of the first lattice.
(8) The digital micromirror array DMD 8 is used for independently regulating and controlling each sub-light spot of the thousand-beam lattice, so that the ten-thousand-beam lattice produced by final splicing is also independently controllable in intensity, switch and energy distribution, and can be used for high-flux, high-precision and high-quality inscription of any complex three-dimensional structure.

Claims (7)

1. The utility model provides a parallel direct writing device based on ten thousand independently controllable laser dot matrix produce, contains two way light, adopts the femto second laser source of different wavelength respectively, namely first light source (1) and second light source (2), its characterized in that: the first light source (1) is divided into a first light beam and a second light beam through the first half-wave plate (3) and the first polarization beam splitter PBS (4), the second light source (2) is divided into a third light beam and a fourth light beam through the second half-wave plate (5) and the second polarization beam splitter PBS (6), the four light beams then enter the first light path, the second light path, the third light path and the fourth light path respectively, and the structures of the four light paths are identical: the three-dimensional laser system comprises a first reflecting mirror (7), a digital micromirror array DMD (8), a first convex lens (9), a second convex lens (10), a second reflecting mirror (11), a micro lens array (12), a third reflecting mirror (13), a fourth reflecting mirror (14) and a first sleeve lens (15), which are sequentially arranged according to the light advancing direction, wherein four light paths respectively convert four light beams into thousand-beam independently controllable laser lattices, namely a first lattice, a second lattice, a third lattice and a fourth lattice, the first lattice and the second lattice are combined through a third polarizing beam splitter PBS (16), the third lattice and the fourth lattice are combined through a second sleeve lens (18) to be incident on a first dichroic mirror (20), the third lattice and the fourth lattice are combined through a fourth polarizing beam splitter PBS (17), the combined is incident on the first dichroic mirror (20) through a third sleeve lens (19), the first dichroic mirror (20) is combined through reflection of the first lattice and the second lattice and transmission of the third lattice and the fourth lattice, the four lattices are combined, the four lattices are sequentially combined through a fourth lattice sleeve lens (21), the second lattice and the fourth lattice lens (23) are sequentially moved to form a three-dimensional focal structure, and finally the three-dimensional laser system is formed by combining the complex focal structure, and the focal system is formed by moving a three-dimensional focal plane (23) and a complex focal structure is formed by combining and a focal lens (23) The second dichroic mirror (22) reflects and the third convex lens (25) images onto the CCD (26).
2. The parallel direct writing device based on ten thousand-beam independently controllable laser lattice generation according to claim 1, wherein: the first light source (1) and the second light source (2) are two femtosecond light sources with wavelengths different by a few nanometers, photoresist exists to enable the two light sources to irradiate simultaneously to generate polymerization reaction, and other parameters such as pulse width, power, repetition frequency, spot caliber and the like of the two light sources are completely consistent except for the wavelength difference.
3. The parallel direct writing device based on ten thousand-beam independently controllable laser lattice generation according to claim 1, wherein: the first half-wave plate (3) and the first polarization beam splitter PBS (4) divide the first light source (1) into a first light beam and a second light beam which are perpendicular to each other in polarization direction and have equal energy, and the second half-wave plate (5) and the second polarization beam splitter PBS (6) divide the second light source (2) into a third light beam and a fourth light beam which are perpendicular to each other in polarization direction and have equal energy.
4. The parallel direct writing device based on ten thousand-beam independently controllable laser lattice generation according to claim 1, wherein: the four light paths are used for generating thousands of independently controllable laser lattices, and the four light paths are specifically as follows: the light beam passes through a first reflecting mirror (7) to adjust the angle of the light incident on the digital micro-mirror array DMD (8) so that the light is emitted perpendicular to a window of the digital micro-mirror array DMD (8), the digital micro-mirror array DMD (8) is used for carrying out amplitude modulation on incident light spots, specifically, the digital micro-mirror array DMD (8) pixels are partitioned by the micro-mirror switch control of the digital micro-mirror array DMD (8) so as to be divided into M multiplied by N subarrays, the micro-mirrors in the subarrays are in an on state, the micro-mirrors among the subarrays are in an off state and cannot reflect light in a required direction, the incident laser is divided into M multiplied by N light spot arrays after being subjected to the amplitude modulation of the digital micro-mirror array DMD (8), one subarray corresponds to one subarray, the M x N light spot array emitted from the digital micro-mirror array DMD (8) sequentially passes through a 4F system formed by a first convex lens (9) and a second convex lens (10) and a second reflecting mirror (11) to be imaged on a micro-lens array MLA (12), the state distribution and imaging system of the digital micro-mirror array DMD (8) micro-mirrors are reasonably designed, the caliber of sub light spots incident on the micro-lens array MLA (12) is not larger than the size of micro-lens of the micro-lens array MLA (12), the distribution period of each sub light spot is ensured to be basically consistent with the period of each micro-lens of the MLA (12), the M x N light spot array is finally overlapped with the N x N micro-lens of the micro-lens array MLA (12) one by one in space, and an mxn focal array is formed on a focal plane of the microlens array MLA (12).
5. The parallel direct writing device based on ten thousand-beam independently controllable laser lattice generation according to claim 1, wherein: the digital micromirror array DMD (8) comprises M multiplied by N subarrays, each subarray comprises M multiplied by M micromirrors, and corresponds to one sub-light spot, the M multiplied by M micromirrors are switched in an independent on state and an independent off state, and the intensity, the switch and the light spot energy distribution of each sub-light spot are independently controlled, wherein the implementation mode is as follows: the m multiplied by m micro mirrors are all switched to the off state, namely the corresponding sub light spots are closed; compared with other sub-light spots, the intensity of a certain sub-light spot is too high, part of peripheral micro mirrors of m multiplied by m micro mirrors corresponding to the sub-light spot are closed, and the light spot energy is independently reduced; when the energy distribution of the sub-light spots is uneven, part of the micro mirrors corresponding to the area with overlarge light spot energy are uniformly closed in m multiplied by m micro mirrors, so that the energy of the area of the sub-light spots is reduced, and the energy distribution of the sub-light spots is homogenized.
6. The parallel direct writing device based on ten thousand-beam independently controllable laser lattice generation according to claim 1, wherein: the first lattice and the second lattice are combined through a third polarization beam splitter PBS (16), and the combined beams pass through a second sleeve lens (18); the third lattice and the fourth lattice are combined through a fourth polarization beam splitter PBS (17), and the combined beams pass through a third sleeve lens (19); the first dichroic mirror (20) is reflective for the wavelength of the light source (1) and transmissive for the wavelength of the second light source (2); two first sleeve lenses (15) of the light path where the first lattice and the second lattice are located respectively form a 4F system with the second sleeve lens (18), so that the first lattice and the second lattice are combined and reflected by the first dichroic mirror (2) and then imaged on the front focal plane of the fourth sleeve lens (21); the three and four lattices after beam combination are transmitted by a first dichroic mirror (20) and then are combined with the first lattice and the second lattice, two first sleeve lenses (15) of the light path where the three and four lattices are positioned and a third sleeve lens (19) form a 4F system, and the three and four lattices are imaged to the front focal surface of a fourth sleeve lens (21) through the 4F system respectively; finally, imaging four lattices of the front focal plane of the fourth sleeve lens (21) on the focal plane of the objective lens (23) through an imaging system formed by the fourth sleeve lens (21) and the objective lens (23); other parameters such as intensity, period, array size and the like except that the first lattice and the second lattice, the third lattice and the fourth lattice are perpendicular to each other in the polarization direction are identical, and other parameters such as intensity, period, array size and the like except that the first lattice and the third lattice, the second lattice and the fourth lattice are different by a few nanometers in wavelength are identical.
7. The parallel direct writing device based on ten thousand-beam independently controllable laser lattice generation according to claim 1, wherein: the third reflecting mirror (13) and the fourth reflecting mirror (14) are used for adjusting the space positions of the lattices, so that the second lattice and the first lattice are staggered by 1/2 lattice period in the x direction, the third lattice and the first lattice are staggered by 1/2 lattice period in the y direction, the fourth lattice and the first lattice are staggered by 1/2 lattice period in the x direction and the y direction, finally, the four lattices are spliced on the focal plane of the objective lens (23) in the above space distribution mode to form a ten-thousand-beam lattice, the period of the lattice is 1/2 of the period of the first lattice, and the intensity, the switch and the energy distribution of each sub-facula of the lattice are independently controllable.
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