CN112582522A - Micro light emitting diode chip and manufacturing method thereof - Google Patents
Micro light emitting diode chip and manufacturing method thereof Download PDFInfo
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- CN112582522A CN112582522A CN201910945915.2A CN201910945915A CN112582522A CN 112582522 A CN112582522 A CN 112582522A CN 201910945915 A CN201910945915 A CN 201910945915A CN 112582522 A CN112582522 A CN 112582522A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 97
- 238000005538 encapsulation Methods 0.000 claims abstract description 32
- 238000002161 passivation Methods 0.000 claims abstract description 28
- 238000004806 packaging method and process Methods 0.000 claims abstract description 13
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- 238000002955 isolation Methods 0.000 claims description 8
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- 229910001195 gallium oxide Inorganic materials 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
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- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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Abstract
The invention provides a micro light-emitting diode chip and a manufacturing method thereof, wherein the micro light-emitting diode chip comprises a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a first type electrode, a second type electrode, an insulating passivation layer and an encapsulation layer, wherein the light-emitting layer and the second type semiconductor layer are stacked on part of the top surface of the first type semiconductor layer to form a boss; the insulating passivation layer covers the side wall and part of the top surface of the first type semiconductor layer, the light emitting layer and the second type semiconductor layer; the first type electrode is arranged on one side of the boss and is in ohmic contact with the part of the first type semiconductor layer, exposed out of the insulating passivation layer; the packaging layer is at least partially filled between the first type electrode and the boss so as to increase the thickness of the micro light-emitting diode chip.
Description
Technical Field
The invention relates to the technical field of display, in particular to a micro light-emitting diode chip and a manufacturing method thereof.
Background
A micro light emitting diode (μ LED) display panel is a display panel that realizes image display by integrating micro LED chips having a size of hundreds of micrometers or less on one substrate as display pixels, each of which can be individually driven to light, and is a self-luminous display panel.
In the manufacturing process of the micro light emitting diode display screen, the micro light emitting diodes are transferred from the growth substrate to the temporary substrate and then transferred to the driving back plate, and the thickness of the part, which is positioned between two electrodes, of the micro light emitting diode in the flip structure is usually only about 3 micrometers, so that the waist part of the micro light emitting diode is easy to break and fail in the stress process when the micro light emitting diodes are transferred in batches.
Therefore, the existing micro light-emitting diode is easy to break and lose efficacy during batch transfer, so that the micro light-emitting diode chip has the problem of low product yield.
Disclosure of Invention
The embodiment of the invention provides a micro light-emitting diode chip and a manufacturing method thereof, which are used for improving the yield of the micro light-emitting diode chip.
In order to achieve the above object, the embodiments of the present invention provide the following technical solutions:
in one aspect, embodiments of the present invention provide a micro light emitting diode chip, which includes a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first type electrode, a second type electrode, an insulating passivation layer, and an encapsulation layer,
the light emitting layer and the second type semiconductor layer are arranged on part of the top surface of the first type semiconductor layer in a laminated mode to form a boss, and the second type electrode is in ohmic contact with the second type semiconductor layer;
the insulating passivation layer covers the side wall and part of the top surface of the first type semiconductor layer, the light emitting layer and the second type semiconductor layer;
the first type electrode is arranged on one side, far away from the boss, of the top surface of the first type semiconductor layer, and the part, exposed out of the insulating passivation layer, of the first type semiconductor layer is in ohmic contact with the first type electrode;
the packaging layer is at least partially filled between the first type electrode and the boss to increase the thickness of the micro light emitting diode chip.
Compared with the prior art, the micro light-emitting diode chip provided by the embodiment of the invention has the following advantages:
according to the micro light-emitting diode chip provided by the embodiment of the invention, the second type semiconductor layer and the light-emitting layer are stacked on the first type semiconductor layer to form the boss, and the packaging layer is arranged between the boss and the first type electrode, so that the thickness of the micro light-emitting diode chip is improved, the stability of the structure of the micro light-emitting diode chip is further enhanced, the possibility of breakage of the micro light-emitting diode chip is avoided or reduced, and the product yield of the micro light-emitting diode chip is improved.
As an improvement of the micro light emitting diode chip according to the embodiment of the present invention, the micro light emitting diode chip further includes a contact electrode layer, the contact electrode layer is disposed on the second type semiconductor layer, the contact electrode layer is in ohmic contact with the second type semiconductor layer, and the second type electrode is connected to the contact electrode layer.
As an improvement of the micro light emitting diode chip according to the embodiment of the invention, the insulating passivation layer covers the sidewall and a portion of the top surface of the contact electrode layer.
As an improvement of the micro light emitting diode chip in the embodiment of the invention, a plane perpendicular to the light emitting surface is taken as a cross section, and the cross sections of the light emitting layer and the second type semiconductor layer are trapezoidal.
As an improvement of the micro light emitting diode chip in the embodiment of the invention, the acute angle of the trapezoid ranges from 10 degrees to 80 degrees.
As an improvement of the micro light emitting diode chip according to the embodiment of the invention, the shapes of the light emitting layer and the second type semiconductor layer are truncated cones or truncated pyramids.
As an improvement of the micro light emitting diode chip according to the embodiment of the present invention, the package layer wraps the insulating passivation layer, the first type electrode, the second type electrode, and the bottom of the first type semiconductor layer, and the tops of the first type electrode and the second type electrode extend out of the package layer.
As an improvement of the micro light emitting diode chip according to the embodiment of the invention, a top surface of the first type electrode facing away from the first type semiconductor layer is flush with a top surface of the second type electrode facing away from the first type semiconductor layer.
As an improvement of the micro light emitting diode chip according to the embodiment of the present invention, the encapsulation layer is epoxy resin glue.
On the other hand, the embodiment of the invention also provides a manufacturing method of the micro light emitting diode chip, which comprises the following steps:
the method comprises the steps that a micro light-emitting diode array is inversely arranged on a substrate base plate, and the micro light-emitting diode with the substrate base plate is bonded with a temporary base plate;
separating the substrate base plate by laser stripping, and cleaning gallium and gallium oxide remained on the micro light-emitting diode by dilute acid solution;
coating an encapsulation layer on the micro light-emitting diode;
pressing the packaging layer by using an isolation plate, and heating and curing the packaging layer;
and removing the isolation plate, and forming a micro light-emitting diode chip on the temporary substrate.
The method for manufacturing a micro light emitting diode chip provided by the embodiment of the invention is used for manufacturing the micro light emitting diode chip, so that the method has the same advantages as those of the micro light emitting diode chip, and the details are not repeated herein.
In addition to the technical problems solved by the present invention, the technical features constituting the technical solutions, and the advantageous effects brought by the technical features of the technical solutions described above, other technical problems that can be solved by the micro light emitting diode chip and the manufacturing method thereof provided by the embodiments of the present invention, other technical features included in the technical solutions, and advantageous effects brought by the technical features will be further described in detail in the detailed description.
Drawings
In order to illustrate embodiments of the invention or prior art solutions more clearly, the drawings that are needed in the description of the embodiments of the invention or prior art will be briefly described below, it being understood that the drawings in the following description are only some embodiments of the invention, and that these drawings and the written description are not intended to limit the scope of the disclosed concept in any way, but rather to illustrate it to those skilled in the art by reference to specific embodiments, and that other drawings may be obtained by those skilled in the art without inventive effort.
Fig. 1 is a schematic structural diagram of a micro light emitting diode chip according to an embodiment of the present invention;
FIG. 2 is a top view of FIG. 1;
fig. 3 is a flowchart of a method for manufacturing a micro light emitting diode chip according to a second embodiment of the present invention;
fig. 4 is a schematic view of a flow structure of a micro light emitting diode chip in a method for manufacturing the micro light emitting diode chip according to a second embodiment of the present invention.
Description of reference numerals:
10-a first type semiconductor layer;
20-a second type semiconductor layer;
30-a light-emitting layer;
40-a first type of electrode;
50-electrodes of a second type;
60-insulating passivation layer;
70-an encapsulation layer;
80-contact electrode layer.
Detailed Description
The existing micro light-emitting diode is easy to break and lose efficacy when being transferred in batches, so that the micro light-emitting diode chip has the problem of low product yield.
In view of the above drawbacks, an embodiment of the present invention provides an improved technical solution, in which a micro light emitting diode chip includes a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first type electrode, a second type electrode, an insulating passivation layer, and an encapsulation layer, the second type semiconductor layer and the light emitting layer are stacked on a portion of a top surface of the first type semiconductor layer to form a boss, and the encapsulation layer is disposed between the boss and the first type electrode, so that a thickness of the micro light emitting diode chip is increased, and a structural stability of the micro light emitting diode chip is enhanced, thereby preventing or reducing a possibility of breakage of the micro light emitting diode chip, and increasing a product yield of the micro light emitting diode chip.
In order to make the aforementioned objects, features and advantages of the embodiments of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings. It is to be understood that the described embodiments are merely a few embodiments of the invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
Referring to fig. 1 and 2, a micro light emitting diode chip according to a first embodiment of the present invention includes a first type semiconductor layer 10, a light emitting layer 30, a second type semiconductor layer 20, a first type electrode 40, a second type electrode 50, an insulating passivation layer 60, and an encapsulation layer 70, wherein the light emitting layer 30 and the second type semiconductor layer 20 are stacked on a portion of a top surface of the first type semiconductor layer 10 to form a bump, and the second type electrode 50 is in ohmic contact with the second type semiconductor layer 20; the insulating passivation layer 60 covers the sidewalls and a portion of the top surface of the first-type semiconductor layer 10, the light emitting layer 30, and the second-type semiconductor layer 20; the first-type electrode 40 is disposed on the top surface of the first-type semiconductor layer 10 on a side away from the mesa, and a portion of the first-type semiconductor layer 10 exposed out of the insulating passivation layer 60 is in ohmic contact with the first-type electrode 40; the encapsulation layer 70 at least partially fills between the first type electrode 40 and the mesa to increase the thickness of the micro light emitting diode chip.
Specifically, in the present embodiment, as shown in fig. 1, the orientation shown in fig. 1 is used for description, it should be noted that the light emitting surface in the present embodiment is a bottom surface of the first type semiconductor layer 10, and the top surface of the first type semiconductor layer 10 refers to a surface of the first type semiconductor layer 10 away from the light emitting surface in fig. 1, that is, a surface of the first type semiconductor layer 10 close to the light emitting layer 30. Illustratively, a portion of the top surface of the first-type semiconductor layer 10 may be upwardly convex to support the light emitting layer 30 and the second-type semiconductor layer 20; the light emitting layer 30 and the second type semiconductor layer 20 are sequentially laminated to form a mesa on the first type semiconductor layer 10. The first-type electrode 40 is disposed on the top surface of the first-type semiconductor layer 10 on a side away from the mesa, the first-type electrode 40 being in ohmic contact with the first-type semiconductor layer 10.
On the basis of the above embodiment, the insulating passivation layer 60 in this embodiment covers the first type semiconductor layer 10, the light emitting layer 30 and the second type semiconductor layer 20, specifically, the insulating passivation layer 60 covers a portion of the top surface of the first type semiconductor layer 10, and a portion of the first type semiconductor layer 10 exposed from the insulating passivation layer 60 is connected to the first type electrode 40; the insulating passivation layer 60 covers a portion of the top surface of the second type semiconductor layer 20, and a portion of the second type semiconductor layer 20 exposed from the insulating passivation layer 60 is connected to the second type electrode 50.
The embodiment further includes an encapsulation layer 70, and the encapsulation layer 70 is partially or completely disposed between the first type electrode 40 and the boss, as shown in fig. 1, a recess is formed between the first type electrode 40 and the boss, and the thickness of the recess is small, so that the recess with small thickness is easily broken during the transferring and bonding process of the micro light emitting diode chip, resulting in failure of the micro light emitting diode chip. The encapsulation layer 70 is filled in the recess, so that the thickness of the micro light emitting diode chip is increased, and the possibility of fracture is avoided or reduced. It should be noted that the tops of the first-type electrodes 40 and the second-type electrodes 50 are exposed outside the encapsulation layer 70 for electrical connection.
In summary, in the micro light emitting diode chip provided in the first embodiment of the present invention, the second type semiconductor layer 20 and the light emitting layer 30 are stacked on the first type semiconductor layer to form a boss, and the encapsulation layer 70 is disposed between the boss and the first type electrode 40, so that the thickness of the micro light emitting diode chip is increased, and the structural stability of the micro light emitting diode chip is further enhanced, thereby avoiding or reducing the possibility of breakage of the micro light emitting diode chip, and increasing the product yield of the micro light emitting diode chip.
In one possible implementation, the micro light emitting diode chip further includes a contact electrode layer 80, the contact electrode layer 80 is disposed on the top surface of the second-type semiconductor layer 20, the contact electrode layer 80 is in ohmic contact with the second-type semiconductor layer 20, and the second-type electrode 50 is connected to the contact electrode layer 80. It should be noted that the contact electrode layer 80 may be disposed in the second-type electrode 50, and in this embodiment, the contact electrode layer 80 is separately disposed on the second-type semiconductor layer 20, so that the reliability of the ohmic contact between the second-type electrode 50 and the second-type semiconductor layer 20 is improved.
On the basis of the above embodiment, further, the insulating passivation layer 60 covers the sidewalls and a part of the top surface of the contact electrode layer 80. After the contact electrode layer 80 is directly formed on the second-type semiconductor layer 20, the insulating passivation layer 60 covers the contact electrode layer 80, particularly the sidewalls and a portion of the top surface of the contact electrode layer 80, and a portion of the top surface of the contact electrode layer 80 exposed from the insulating passivation layer 60 is used for connection with the second-type electrode 50.
In one possible implementation manner, the cross-sectional shape of the light emitting layer 30 and the second-type semiconductor layer 20 is a trapezoid taking a plane perpendicular to the light emitting surface as a cross section. It should be noted that, in this embodiment, the light emitting surface is the bottom surface of the first type semiconductor layer 10, and the cross section of the light emitting layer 30 and the second type semiconductor layer 20 refers to the cross section of the stacked structure formed by the light emitting layer 30 and the second type semiconductor layer 20, and in this embodiment, as shown in fig. 1, a plane perpendicular to the bottom surface of the first type semiconductor layer 10 is taken as the cross section, and the cross sectional shape of the stacked structure formed by the light emitting layer 30 and the second type semiconductor layer 20 is a trapezoid, and the trapezoid structure facilitates the fabrication of the micro light emitting diode chip.
In addition to the above embodiments, the acute angle of the trapezoid is in the range of 10 ° to 80 °, specifically, in the present embodiment, the base angle of the trapezoid can be any value in the range of 10 ° to 80 °, for example, the cross-sectional shape of the stacked structure including the light-emitting layer 30 and the second-type semiconductor layer 20 is an isosceles trapezoid, and the base angle of the isosceles trapezoid can be set to 60 °, which facilitates the fabrication of the micro light-emitting diode.
In one possible implementation, the light emitting layer 30 and the second type semiconductor layer 20 are in the shape of truncated cones or truncated pyramids. The shape of the light-emitting layer 30 and the second-type semiconductor layer 20 refers to the shape of the laminated structure of the light-emitting layer 30 and the second-type semiconductor layer 20, and as shown in fig. 2, the laminated structure of the light-emitting layer 30 and the second-type semiconductor layer 20 may be a circular truncated cone, a truncated pyramid, or a quadrangular pyramid.
In one possible implementation, the encapsulation layer 70 wraps the insulating passivation layer 60, the first-type electrode 40, the second-type electrode 50, and the bottom of the first-type semiconductor layer 10, and the top of the first-type electrode 40 and the second-type electrode 50 protrudes out of the encapsulation layer 70. In addition to the above embodiments, the encapsulation layer 70 is at least partially disposed between the first-type electrode 40 and the bump to increase the thickness of the micro light emitting diode chip, in this embodiment, the encapsulation layer 70 is wrapped outside the insulating passivation layer 60, the first-type electrode 40, the second-type electrode 50 and the first-type semiconductor layer 10, and the outer shape of the encapsulation layer 70 is formed in a rectangular parallelepiped shape to wrap the bottom of the first-type semiconductor layer 10 inside, which is provided to further increase the thickness of the micro light emitting diode chip.
It should be noted that the top of the first-type electrode 40 and the second-type electrode 50 extend out of the encapsulation layer 70 for subsequent electrical connection.
On the basis of the above embodiment, preferably, the top surface of the first-type electrode 40 facing away from the first-type semiconductor layer 10 is flush with the top surface of the second-type electrode 50 facing away from the first-type semiconductor layer 10. As shown in fig. 1, the first-type electrodes 40 and the second-type electrodes 50 extend out of the encapsulation layer 70 with the top surfaces of the extended portions being flush, which ensures alignment accuracy in subsequent electrical connection.
In one possible implementation, the encapsulation layer 70 is an epoxy glue. The state of epoxy glue is transparent, and epoxy glue forms encapsulation layer 70 for the selection of this embodiment, is convenient for make encapsulation layer 70, has still avoided influencing the light-emitting rate of little emitting diode chip simultaneously. Further, the encapsulation layer 70 may also be provided as spin-on glass.
Example two
As shown in fig. 3 and 4, a second embodiment of the present invention provides a method for manufacturing a micro light emitting diode chip, including:
s01: the micro light-emitting diode array is inversely arranged on the substrate base plate, and the micro light-emitting diode with the substrate base plate is bonded with the temporary base plate; in this step, the substrate base plate may be a sapphire substrate base plate or a glass substrate base plate.
S02: stripping and separating the substrate base plate by adopting laser, and cleaning gallium and gallium oxide remained on the micro light-emitting diode by adopting a dilute acid solution; after the substrate is stripped by the laser, gallium oxide, or a mixture of gallium and gallium oxide remains on the surface of the first-type semiconductor layer 10 of the micro light emitting diode, and the remaining gallium and gallium oxide need to be cleaned by a dilute acid, such as a dilute sulfuric acid solution, to clean the first-type semiconductor layer 10.
S03: coating the micro-leds with an encapsulation layer 70; in this step, the sealing layer 70 may be applied by a method such as vapor deposition or ink jet printing.
S04: pressing the packaging layer 70 by using a separation plate, and heating and curing the packaging layer 70; in this embodiment, the shape of the isolation board is selected according to specific requirements, and the encapsulation layer 70 on each micro light emitting diode is molded by pressing the isolation board; meanwhile, the temperature is increased to melt the packaging layer 70, and the packaging layer is simultaneously cooled under the pressing effect of the isolation plate, so that the packaging layer is solidified and molded.
S05: and removing the isolation plate, and forming a micro light-emitting diode chip on the temporary substrate.
The method for manufacturing a micro light emitting diode chip provided in this embodiment is used to manufacture the micro light emitting diode chip provided in the first embodiment, and therefore, the method has the same advantages as the micro light emitting diode chip provided in the first embodiment, and is not described herein again.
The embodiments or implementation modes in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other.
In the description of the present specification, reference to the description of the terms "one embodiment", "some embodiments", "an illustrative embodiment", "an example", "a specific example", or "some examples", etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A micro light emitting diode chip is characterized by comprising a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first type electrode, a second type electrode, an insulating passivation layer and an encapsulation layer, wherein,
the light emitting layer and the second type semiconductor layer are arranged on part of the top surface of the first type semiconductor layer in a laminated mode to form a boss, and the second type electrode is in ohmic contact with the second type semiconductor layer;
the insulating passivation layer covers the side wall and part of the top surface of the first type semiconductor layer, the light emitting layer and the second type semiconductor layer;
the first type electrode is arranged on one side, far away from the boss, of the top surface of the first type semiconductor layer, and the part, exposed out of the insulating passivation layer, of the first type semiconductor layer is in ohmic contact with the first type electrode;
the packaging layer is at least partially filled between the first type electrode and the boss to increase the thickness of the micro light emitting diode chip.
2. The micro light-emitting diode chip of claim 1, further comprising a contact electrode layer disposed on the second-type semiconductor layer, the contact electrode layer being in ohmic contact with the second-type semiconductor layer, the second-type electrode being connected to the contact electrode layer.
3. The micro light-emitting diode chip of claim 2, wherein the insulating passivation layer covers sidewalls and a portion of the top surface of the contact electrode layer.
4. The micro light emitting diode chip of claim 1, wherein a cross section of the light emitting layer and the second type semiconductor layer is trapezoidal, and a plane perpendicular to the light emitting surface is taken as a cross section.
5. The micro light-emitting diode chip of claim 4, wherein the acute angle of the trapezoid ranges from 10 ° to 80 °.
6. The micro light emitting diode chip of claim 5, wherein the shape of the light emitting layer and the second type semiconductor layer is truncated cone or truncated pyramid.
7. The micro light emitting diode chip of claim 1, wherein the encapsulation layer encapsulates the insulating passivation layer, the first type electrode, the second type electrode, and the bottom of the first type semiconductor layer, and wherein the top of the first type electrode and the second type electrode protrudes out of the encapsulation layer.
8. The micro light-emitting diode chip of claim 1 or 7, wherein a top surface of the first-type electrode facing away from the first-type semiconductor layer is flush with a top surface of the second-type electrode facing away from the first-type semiconductor layer.
9. The micro light-emitting diode chip of claim 1, wherein the encapsulation layer is an epoxy glue.
10. A manufacturing method of a micro light emitting diode chip is characterized by comprising the following steps:
the method comprises the steps that a micro light-emitting diode array is inversely arranged on a substrate base plate, and the micro light-emitting diode with the substrate base plate is bonded with a temporary base plate;
separating the substrate base plate by laser stripping, and cleaning gallium and gallium oxide remained on the micro light-emitting diode by dilute acid solution;
coating an encapsulation layer on the micro light-emitting diode;
pressing the packaging layer by using an isolation plate, and heating and curing the packaging layer;
and removing the isolation plate, and forming a micro light-emitting diode chip on the temporary substrate.
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| WO2023123469A1 (en) * | 2021-12-31 | 2023-07-06 | 厦门三安光电有限公司 | Light emitting diode and light emitting device comprising same |
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| CN109119410A (en) * | 2018-06-08 | 2019-01-01 | 友达光电股份有限公司 | Method for manufacturing light emitting device |
| CN110165026A (en) * | 2019-04-04 | 2019-08-23 | 华为技术有限公司 | LED chip and preparation method thereof, display module, intelligent terminal |
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| WO2023123469A1 (en) * | 2021-12-31 | 2023-07-06 | 厦门三安光电有限公司 | Light emitting diode and light emitting device comprising same |
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