CN109873060A - A kind of micro- light emitting diode matrix production method, bonding substrate and luminescence chip - Google Patents
A kind of micro- light emitting diode matrix production method, bonding substrate and luminescence chip Download PDFInfo
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- CN109873060A CN109873060A CN201910315135.XA CN201910315135A CN109873060A CN 109873060 A CN109873060 A CN 109873060A CN 201910315135 A CN201910315135 A CN 201910315135A CN 109873060 A CN109873060 A CN 109873060A
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Abstract
The present invention provides a kind of micro- light emitting diode matrix production method, bonding substrate and luminescence chips, are related to LED technology field.It is primarily based on the side fabricating patterned luminescent layer of first substrate, the side for being then based on the second substrate makes patterning bonded layer corresponding with the patterning luminescent layer, wherein, the patterning bonded layer includes sacrificial layer, the patterning luminescent layer is bonded with the patterning bonded layer again, multiple luminescence chips are formed with the side in the second substrate, finally remove the sacrificial layer, and remove to some or all of luminescence chip using a transfer base substrate.Micro- light emitting diode matrix production method, bonding substrate and luminescence chip provided in an embodiment of the present invention have the more efficient effect of process.
Description
Technical field
The present invention relates to LED technology fields, in particular to a kind of micro- light emitting diode matrix production side
Method, bonding substrate and luminescence chip.
Background technique
Luminescence chip (Light Emitting Diode, light emitting diode) display device is a kind of base in driving circuit
The all solid state spontaneous optical arrays of micro-led (luminescence chip) array of piece over-assemble high density two dimension, LED size is micro-
It is reduced to micron order, to reach very-high solution density, ultrahigh resolution, theoretically can adapt to the technology of various sizes screen.It is excellent
Change the production method of the structure and luminescence chip array of design luminescence chip device, so that miniature LED component can be higher
It the transfer of effect and is assembled in drive substrate, forming the spontaneous display device being made of high density luminescence chip array becomes current
The emphasis of research.Since luminescence chip size itself only has tens microns, formal dress or flipped light emitting chip structure, electrode and electricity are mutual
Company occupies that chip area is larger, and the size of luminescence chip device is difficult to decrease, and pixel density is difficult to improve, and very-high solution is sent out
Optical chip display device, above-mentioned device architecture are difficult to meet demand.
Summary of the invention
The present invention provides a kind of micro- light emitting diode matrix production methods, to solve luminescence chip device in the prior art
Size be difficult to decrease, the problem of pixel density is difficult to improve.
Another object of the present invention is to provide a kind of bonding substrate, to solve luminescence chip device in the prior art
The problem of size is difficult to decrease, and pixel density is difficult to improve.
Another object of the present invention is to provide a kind of luminescence chip, to solve luminescence chip device in the prior art
The problem of size is difficult to decrease, and pixel density is difficult to improve.To achieve the goals above, technical side used in the embodiment of the present invention
Case is as follows:
In a first aspect, the embodiment of the invention provides a kind of micro- light emitting diode matrix production method, described micro- luminous two
Pole pipe array making method includes:
Side fabricating patterned luminescent layer based on first substrate；
Side based on the second substrate makes patterning bonded layer corresponding with the patterning luminescent layer, wherein described
Patterning bonded layer includes sacrificial layer；
The patterning luminescent layer is bonded with the patterning bonded layer, in the side shape of the second substrate
At multiple luminescence chips；
The sacrificial layer is removed, and some or all of luminescence chip is removed using a transfer base substrate；
Luminescence chip on the transfer base substrate is installed on target base plate, to form micro- light emitting diode matrix.
Second aspect, the embodiment of the present invention also propose a kind of bonding substrate, and the bonding substrate includes: the second substrate and position
Patterning bonded layer in the second substrate side；Wherein, the patterning bonded layer includes sacrificial layer.
The third aspect, the embodiment of the invention provides a kind of luminescence chip, the luminescence chip includes luminescent layer, the hair
The bonded layer of optical layer connection；Wherein, the side far from the luminescent layer of the bonded layer is provided with patterning mounting portion.
Compared with the prior art, the invention has the following advantages:
The present invention provides a kind of micro- light emitting diode matrix production methods, are primarily based on the side production figure of first substrate
Case luminescent layer, the side for being then based on the second substrate make patterning bonded layer corresponding with the patterning luminescent layer,
In, the patterning bonded layer includes sacrificial layer, then the patterning luminescent layer is bonded with the patterning bonded layer,
Multiple luminescence chips are formed with the side in the second substrate, finally remove the sacrificial layer, and utilize a transfer base substrate pair
The some or all of luminescence chip is removed.Since micro- light emitting diode matrix production method provided by the invention uses
The mode of upside-down mounting makes micro- light emitting diode matrix, and luminescence chip can be installed on target base by a transfer base substrate
Plate, thus can be more efficient assemble.Also, it, can not be artificial using removal sacrificial layer, and in the way of transfer base substrate
Luminescence chip is shifted, therefore can reduce the size of luminescence chip device, while improving pixel density.
The present invention also provides a kind of bonding substrate, which includes the second substrate and be located at the second substrate side
Bonded layer is patterned, and patterning bonded layer includes sacrificial layer.Mode due to can directly remove sacrificial layer removes luminescence chip,
Therefore its process is more efficient.
The present invention also provides a kind of luminescence chip, which includes luminescent layer and is bonded with what luminescent layer connected
Layer, and the side of the separate luminescent layer of bonded layer is provided with patterning mounting portion.In such a way that setting patterns mounting portion, energy
Enough when luminescence chip to be installed in target base plate, more convenient carry out welding procedure, to make its installation process more
Efficiently.
To enable the above objects, features and advantages of the present invention to be clearer and more comprehensible, preferred embodiment is cited below particularly, and cooperate
Appended attached drawing, is described in detail below.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it should be understood that the following drawings illustrates only certain embodiments of the present invention, therefore is not construed as pair
The restriction of range for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other relevant attached drawings.
Fig. 1 shows the flow chart of micro- light emitting diode matrix production method provided in an embodiment of the present invention.
Fig. 2 shows the structural schematic diagrams of patterning luminescent layer provided in an embodiment of the present invention.
Fig. 3 shows the top view of patterning luminescent layer provided in an embodiment of the present invention.
Fig. 4 shows the flow chart of the sub-step of the S101 of Fig. 1 provided in an embodiment of the present invention.
Fig. 5 shows the structural schematic diagram of patterning bonded layer provided in an embodiment of the present invention.
Fig. 6 shows the flow chart of the sub-step of the S102 of Fig. 1 provided in an embodiment of the present invention.
Fig. 7 shows the corresponding structural schematic diagram of step S103 provided in an embodiment of the present invention.
Fig. 8 shows the corresponding structural schematic diagram of step S107 provided in an embodiment of the present invention.
Fig. 9 shows the structural schematic diagram of luminescence chip provided in an embodiment of the present invention.
Icon: 110- patterns luminescent layer；111- first substrate；112- light emitting functional layer；113- transparency conducting layer；114-
Metal bonding layer；120- patterns bonded layer；121- the second substrate；The first sacrificial layer of 122-；The second sacrificial layer of 123-；124-
One metal layer；125- second metal layer；130- passivation protection layer；140- transfer base substrate；200- luminescence chip；210- luminescent layer；
220- bonded layer；221- patterns mounting portion.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.The present invention being usually described and illustrated herein in the accompanying drawings is implemented
The component of example can be arranged and be designed with a variety of different configurations.
Below in conjunction with attached drawing in the embodiment of the present invention, technical solution in the embodiment of the present invention carries out clear, complete
Ground description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Usually exist
The component of the embodiment of the present invention described and illustrated in attached drawing can be arranged and be designed with a variety of different configurations herein.Cause
This, is not intended to limit claimed invention to the detailed description of the embodiment of the present invention provided in the accompanying drawings below
Range, but it is merely representative of selected embodiment of the invention.Based on the embodiment of the present invention, those skilled in the art are not doing
Every other embodiment obtained under the premise of creative work out, shall fall within the protection scope of the present invention.
It should also be noted that similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined in a attached drawing, does not then need that it is further defined and explained in subsequent attached drawing.Meanwhile of the invention
In description, it is also necessary to which explanation is unless specifically defined or limited otherwise, term " connected ", " connection " shall be understood in a broad sense,
It for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can be mechanical connection, be also possible to electricity
Connection；It can be directly connected, the connection inside two elements can also be can be indirectly connected through an intermediary.For
For those skilled in the art, the concrete meaning of above-mentioned term in the present invention can be understood with concrete condition.It ties below
Attached drawing is closed, is elaborated to some embodiments of the present invention.In the absence of conflict, following embodiment and embodiment
In feature can be combined with each other.
First embodiment
Referring to Fig. 1, the embodiment of the invention provides a kind of micro- light emitting diode matrix production method, micro- light-emitting diodes
Pipe array making method includes:
S101, the side fabricating patterned luminescent layer 110 based on first substrate 111.
In the present embodiment, the production of micro- light emitting diode matrix is carried out using the technique of upside-down mounting, to reach more efficiently
Effect luminescence chip 200 being assembled in target base plate.Wherein, it for luminescent layer 210 and bonded layer 220, is required to
Carry out patterned process.
The patterning of the present embodiment refers to and divides multiple regions, each region pair on luminescent layer 210 or bonded layer 220
Should make as a luminescence chip 200, and multiple regions are at array arrangement, with realize by luminescent layer 210 and wall into
Line unit close after, multiple luminescence chips 200 of formation are also arranged in array, convenient for using transfer base substrate 140 to luminescence chip 200 into
Row transfer.The patterning luminescent layer 110 of production please refers to Fig. 2 and Fig. 3.
Also, in the present embodiment, the patterning luminescent layer 110 on first substrate 111 includes luminous zone, transparency conducting layer
113, reflective metal layer, barrier metal layer and the first bonding metal layer, successively make between the first bonding metal layer and luminous zone
Transparency conducting layer 113, reflective metal layer and barrier metal layer；Wherein the lateral dimension of transparency conducting layer 113 is less than reflection gold
Belong to the lateral dimension of layer, the lateral dimension of reflective metal layer is less than the lateral dimension of barrier metal layer, the transverse direction of reflective metal layer
Lateral dimension of the size less than the first bonding metal layer.
Wherein, the material for making the first bonding metal layer can be Au or AuSn, be also possible to other metals.Specifically
Ground, referring to Fig. 4, S101 includes:
S1011, side epitaxial growth n type semiconductor layer, quantum well layer and P-type semiconductor based on first substrate 111
Layer.
In the present embodiment, luminescence chip 200 is LED (Light Emitting Diode, light emitting diode), for shining
For diode, luminous zone includes n type semiconductor layer, quantum well layer and p type semiconductor layer, when in the energized state, N
Area's electronics and the hole in the area P in quantum well layer in conjunction with shine.It, first need to be in the first base i.e. in fabricating patterned luminescent layer 110
Successively epitaxial growth luminescent layer 210 on plate 111.
S1012, the side fabricating patterned transparency conducting layer 113 of the separate first substrate 111 based on p type semiconductor layer.
In order to realize conductive function, it is also necessary to make transparency conducting layer 113 in the side of p-shaped semiconductor layer, wherein thoroughly
Bright conductive layer 113 can be made by epitaxy technique or other techniques.
Also, the light in the present embodiment, issued in the quantum well layer in order to realize light emitting diode can be by anti-
The mode penetrated promotes the effect of luminous intensity, and the present embodiment uses transparency conducting layer 113, wherein transparency conducting layer 113 can reach
To electric action, and what is be able to achieve will not will not influence the luminous intensity of light emitting diode to the effect that light is absorbed.
Further, after making transparency conducting layer 113, image conversion is carried out to transparency conducting layer 113, i.e., by electrically conducting transparent
Layer 113 is divided into multiple regions, and multiple regions are arranged in array, for example, by using the modes such as etching by transparency conducting layer 113 into
Row patterning.
Of course, in some other examples, non-transparent conductive layer 113 can also be used, through non-transparent conductive layer
113, realize the reflection to light source, the present embodiment does not do any restriction to this.
Also, as a kind of implementation of the present embodiment, luminous zone is bonded in patterning luminescent layer 110 with substrate is bonded
It performs etching again afterwards, to form patterned luminous zone；As another implementation of the present embodiment, to transparency conducting layer
113 when being patterned, and can also be patterned simultaneously to luminous zone, the present embodiment to this also and without limitation.
S1013, the side production reflective metal layer of the separate first substrate 111 based on patterned transparent conductive layer 113, resistance
Keep off metal layer and the first bonding metal layer.
Wherein, the lateral dimension of reflective metal layer is greater than the lateral dimension of transparency conducting layer 113；The transverse direction of barrier metal layer
Size is greater than the lateral dimension of reflecting layer metal；The lateral dimension of first bonding metal layer is greater than the lateral ruler of barrier metal layer by layer
It is very little.
After producing patterned transparent conductive layer 113, the side of extension can be passed through in patterned transparent conductive layer 113
Formula makes reflective metal layer, wherein reflective metal layer can reflect the light issued in quantum well layer, and then make light
It is emitted from N-type semiconductor side.For example, reflective metal layer can be silver layer.Barrier metal layer can protect reflective metal layer, resistance
Only its electromigration guarantees that it keeps high reflectance.First bonding metal layer is used to turn the semiconductor layer bonding of first substrate 111
Move to the second substrate 121.
The present embodiment also needs the first bonding metal layer 114 of production on reflective metal layer, to realize and be bonded between substrate
Permanent bonding.Wherein, the principle of bonding is the major part therein or complete when the aggregation of a large amount of metallic atoms is formed together solid
Portion's atom can contribute the valence electron of oneself.These valence electrons are common to all atoms, rather than in ionic bond or covalent bond
Electronics, it is only proprietary or shared for some or certain two atoms.Shared valence electron free movement between positive metal ions, seems
A kind of gas forms so-called electron gas, positive metal ions is immersed wherein full of therebetween.It is produced between positive metal ions and electron gas
Raw strong electrostatic attraction, makes metallic atom be combined with each other.
S102, the side production patterning bonded layer 120 corresponding with patterning luminescent layer 110 based on the second substrate 121,
Wherein, patterning bonded layer 120 includes sacrificial layer.
In the present embodiment, sequencing is had no between step S102 and step S101, i.e., in actual process,
Can first processing graphic pattern luminescent layer 110, can also first processing graphic pattern bonded layer 120.
Also, in order to pattern the bonding effect between luminescent layer 110 and patterning bonded layer 120 more preferably in the present embodiment
In, it needs between image conversion luminescent layer 210 and patterning bonded layer 120 as corresponding relationship.The corresponding relationship of the present embodiment refers to pattern
Change the interval between the size and adjacent area in each region of luminescent layer 110, each region with patterning bonded layer 120
Size and adjacent area between interval it is equal respectively, with realize during bonding, patterning luminescent layer 110 with
There are one-to-one relationships between patterning bonded layer 120.The patterning bonded layer 120 produced please refers to Fig. 5.
Wherein, referring to Fig. 6, S102 includes:
S1021 is carried out patterned process to the target side of the second substrate 121, is formed with the target side in the second substrate 121
Multiple recess.
In the present embodiment, it in order to make 200 bonded layer 220 of luminescence chip, needs first to pattern bonding substrate
Processing, for example, patterned process is carried out by side of the techniques such as photoetching or corrosion to the second substrate 121, to make second
The side of substrate 121 forms multiple recess.Wherein, the patterning of patterning with luminescent layer 210 of recess is corresponding.Also, this
Using the side for being used for growth patterns bonded layer 120 of the second substrate 121 as target side in embodiment.
S1022 makes the first sacrificial layer 122 in the bottom of each recess.
It can be realized better welding to make the luminescence chip 200 of formation, the present embodiment is used in each recess
The mode of bottom fabricating patterned structure, the pattern structure are the first sacrificial layer 122, when in the first sacrificial layer 122 of removal
Afterwards, the pattern structure can be exposed.
Wherein, as a kind of implementation of the present embodiment, patterning mounting portion 221 is patterned cavity, is existed certainly
In other embodiments, mounting portion may be other forms, such as groove, and the present embodiment does not do any restriction to this.?
In manufacturing process, the first sacrificial layer 122 can be made in the bottom of each recess, wherein the first sacrificial layer 122 is by luminous core
When piece 200 is removed from the second substrate 121, chemistry or the layer of other methods removal can be passed through.Removing the first sacrificial layer 122
Afterwards, corresponding patterning mounting portion 221 can be formed in the bottom for device of giving out light.
Wherein, the pattern structure in recess, pattern include cylindrical body, cone, cuboid, square and its deformation
Body；Pattern structure etches formation after can be deposition 122 material of the first sacrificial layer in its further groove, is also possible to direct etching
The second substrate 121 is formed.I.e. in the present embodiment, the structure of the first sacrificial layer 122 includes cylindrical body, cone, cuboid,
Square and its deformable body.
S1023, the second sacrificial layer 123 of the target side deposition based on the second substrate 121.
In order to after bonding more efficiently remove luminescence chip 200 from the second substrate 121, this implementation is also provided with
Two sacrificial layers 123, wherein material and the material of the first sacrificial layer 122 of the second sacrificial layer 123 of production can be identical or not
Together, the present embodiment does not do any restriction to this.
Meanwhile second sacrificial layer 123 be covered in the second substrate 121 and the first sacrificial layer 122, for example, heavy using extension
Long-pending mode the second substrate 121 two sacrificial layer 123 of target side growth regulation so that after making luminescence chip 200, Neng Gou
After removing the second sacrificial layer 123, the effect that luminescence chip 200 is removed from the second substrate 121 can be realized.
S1024, the target side based on the second sacrificial layer 123 make conductive layer.
Wherein, conductive layer includes the first metal layer 124 and second metal layer 125, and is being sunk in each recess first
Product the first metal layer 124, and based on target side depositing second metal layer 125, wherein second metal layer 125 is used for and pattern
Change luminescent layer 110 to be bonded.
It should be noted that still including more after making the second sacrificial layer 123, in the second substrate 121 in the present embodiment
A recess, therefore the first metal layer 124 can be made by the way of deposition in each recess, wherein the first metal layer 124 is used
In one layer after producing luminescence chip 200, welded with target overtime work.Meanwhile the height of the first metal layer 124 is lower than
The height on the top of the second sacrificial layer 123.
Luminescent layer 210 is bonded with patterning bonded layer 120, is formed with the side in the second substrate 121 more by S103
A luminescence chip 200.
Referring to Fig. 7, the two can be carried out key after producing patterning luminescent layer 110 and patterning bonded layer 120
It closes, and forms the luminescence chip 200 of multiple array arrangements after bonding.Wherein, the side of each luminescence chip 200 is the first base
Plate 111, the other side of each luminescence chip 200 are the second substrate 121.
Also, it is whole that one in this step, is mutually interconnected to form between multiple luminescence chips 200 of formation.
S104 removes first substrate 111.
In the present embodiment, the method for removal first substrate 111 can be laser lift-off, be also possible to wet etching, or dry
Method etching.
S105 performs etching patterning luminescent layer 110, to form multiple independent luminescent layers 210.
In order to keep each luminescence chip 200 independent, need to perform etching luminescent layer 210, wherein according to set patterns
Change performs etching, to form multiple independent luminescence chips 200.Etching is directlyed adopt in the present embodiment is located at the second substrate
121 N-type semiconductor, Quantum Well, P-type semiconductor, until exposing the sacrificial layer in the second substrate 121, to form multiple independences
Luminescence chip 200.
It should be noted that this another implementation as embodiment, can also perform etching before step S103
Operation, to form multiple independent luminescent layers 210.Meanwhile it will be patterned into luminescent layer 110 and the patterning progress of bonded layer 120
When bonding, each independent luminescent layer 210 is substantially bonded to patterning bonded layer 120, thus to form multiple independences
Luminescence chip 200.
S106 makes N-type semiconductor Ohm contact electrode on N-type semiconductor.
The metal that Ohmic contact is wherein formed with N-type semiconductor is ring structure, exposes intermediate most N-type semiconductor
For going out light, or use transparent conductive material as Ohm contact electrode, the photon that light emitting diode generates can penetrate ohm
Contact electrode outgoing.
S107, the multi-lager semiconductor layer side wall and part N-type semiconductor that production passivation layer package etching is exposed contact electrode,
Exposed portion N-type semiconductor contacts electrode.
S108, removes 121 partial sacrificial layer structure of the second substrate, and production is fixed temporarily the anchor knot of connection luminescence chip 200
Structure, and remove all sacrificial layers, 200 device architecture of luminescence chip are discharged from the second substrate 121, are temporarily fixed at the by anchor structure
On two substrates 121, formed to 200 array of luminescence chip for receiving substrate transfer.
Micro- light emitting diode on transfer base substrate 140 is transferred to reception substrate, to assemble self-emission display apparatus by S109
Or light emitting array.
The present embodiment using carrying out being transferred to reception substrate to luminescence chip 200 in the way of a transfer base substrate 140,
In, using 140 pairs of transfer base substrate formed to receive substrate shift 200 array of luminescence chip shift when, once can be
It is single or multiple, it is multiple can be continuous multiple, or be transferred to reception substrate according to the multiple of selectivity that certain rule arranges,
To assemble self-emission display apparatus or form light emitting array.
Meanwhile the present embodiment is using removing luminescence chip 200 in the way of a transfer base substrate 140, wherein by
It is consistent in the material of multiple luminescence chips 200 of production, therefore the luminescence chip 200 being located in same the second substrate 121 issues
It is photochromic consistent.In order to be fabricated to micro- light emitting diode matrix, redgreenblue luminescence chip 200, therefore the present embodiment are needed
Some or all of luminescence chip 200 is removed using transfer base substrate 140, on transfer base substrate 140, adjacent luminous core
Spacing between piece 200 is larger, can continue the luminescence chip 200 for removing other coloured light by the transfer base substrate 140, and then make
Make the micro- light emitting diode matrix of three colors.
Second embodiment
Referring to Fig. 5, the embodiment of the invention provides a kind of bonding substrate, bonding substrate includes: multiple patterned the
Two bonding metal layers；Second bonding metal layer side includes the weld metal layers with patterning；And it is located at welding metal
The sacrificial layer of structure side；The wherein weld metal layers of patterning, pattern include hollow cylinder, cone, cuboid, just
Cube and its deformable body；Wherein, the first bonding metal layer is patterned using the bonding substrate and first substrate 111 execute first
The production of micro- light emitting diode matrix of embodiment.
Specifically, which includes the first sacrificial layer 122 and the second sacrificial layer 123, and is provided in the second substrate 121
The recess of multiple array arrangements, each first sacrificial layer 122 are all set in the bottom of each recess, and the second sacrificial layer 123 lid is set
In in the second substrate 121 and the first sacrificial layer 122.And first the structure of sacrificial layer 122 include but is not limited to cuboid, trigone
Taper and cylinder.
The bonding substrate provided through this embodiment, each of light emitting array produced using reverse installation process micro- luminous two
The bottom of pole pipe chip structure 200 is provided with cavity 221, so as to the technique of the welding of more convenient realization.
3rd embodiment
Referring to Fig. 9, the embodiment of the present invention provides a kind of this micro- LED chip construction, which is included in the
PN junction that the N-type semiconductor that is epitaxially-formed on one substrate 111, Quantum Well, P-type semiconductor are constituted, on P-type semiconductor surface
The transparency conducting layer 113 of side, reflective metallic, barrier metal layer and bonding metal layer bonding metal layer and be bonded gold
Belong to the patterned metal layer that electric interconnection is realized in side setting of the layer far from P-type semiconductor for welding assembly.
Wherein N-type semiconductor lateral dimension is less than P-type semiconductor lateral dimension, and 113 lateral dimension of transparency conducting layer is less than P
Type semiconductor transverse size, the lateral dimension of transparency conducting layer 113 are less than the lateral dimension of reflective metal layer, reflective metal layer
Lateral dimension is less than barrier metal layer lateral dimension, and the lateral dimension of reflective metal layer is less than the lateral dimension of bonding metal layer.
Wherein N-type semiconductor, Quantum Well, P-type semiconductor etch exposed side wall and part n type semiconductor layer and are insulated
Passivation layer package protection.
Wherein weld metal layers bottom includes pattern structure, and pattern includes hollow cylinder, cone, cuboid, just
Cube and its deformable body.
Wherein single 200 structure size of luminescence chip is 1-100 μm.
In conclusion being primarily based on first substrate the present invention provides a kind of micro- light emitting diode matrix production method
Side fabricating patterned luminescent layer, the side for being then based on the second substrate make patterning corresponding with the patterning luminescent layer
Bonded layer, wherein the patterning bonded layer includes sacrificial layer, then by the patterning luminescent layer and the patterning bonded layer
It is bonded, multiple luminescence chips is formed with the side in the second substrate, finally remove the sacrificial layer, and utilize one turn
Substrate is moved to remove some or all of luminescence chip.Since micro- light emitting diode matrix provided by the invention makes
Method makes micro- light emitting diode matrix by the way of upside-down mounting, and can be installed on luminescence chip by a transfer pole plate
Target base plate, thus can be more efficient assemble.Simultaneously as the mode that can directly remove sacrificial layer removes luminous core
Piece, therefore its process is more efficient.
The present invention also provides a kind of bonding substrate, which includes the second substrate and be located at the second substrate side
Bonded layer is patterned, and patterning bonded layer includes sacrificial layer.Mode due to can directly remove sacrificial layer removes luminescence chip,
Therefore its process is more efficient.
The present invention also provides a kind of luminescence chip, which includes luminescent layer and is bonded with what luminescent layer connected
Layer, and the side of the separate luminescent layer of bonded layer is provided with patterning mounting portion.In such a way that setting patterns mounting portion, energy
Enough when luminescence chip to be installed in target base plate, more convenient carry out welding procedure, to make its installation process more
Efficiently.
It should be noted that, in this document, the relational terms of such as " first " and " second " or the like are used merely to one
A entity or operation with another entity or operate distinguish, without necessarily requiring or implying these entities or operation it
Between there are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant are intended to
Cover non-exclusive inclusion, so that the process, method, article or equipment for including a series of elements not only includes those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or setting
Standby intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in the process, method, article or apparatus that includes the element.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.It should also be noted that similar label and letter exist
Similar terms are indicated in following attached drawing, therefore, once being defined in a certain Xiang Yi attached drawing, are then not required in subsequent attached drawing
It is further defined and explained.
Claims (10)
1. a kind of micro- light emitting diode matrix production method, which is characterized in that micro- light emitting diode matrix production method packet
It includes:
Side fabricating patterned luminescent layer based on first substrate；
Side based on the second substrate makes patterning bonded layer corresponding with the patterning luminescent layer, wherein the pattern
Changing bonded layer includes sacrificial layer；
The patterning luminescent layer is bonded with the patterning bonded layer, is formed with the side in the second substrate more
A luminescence chip；
The sacrificial layer is removed, and some or all of luminescence chip is removed using a transfer base substrate；
Luminescence chip on the transfer base substrate is installed on target base plate, to form micro- light emitting diode matrix.
2. micro- light emitting diode matrix production method as described in claim 1, which is characterized in that the sacrificial layer includes first
Sacrificial layer and the second sacrificial layer, the side based on the second substrate make patterning key corresponding with the patterning luminescent layer
Close layer the step of include:
Patterned process is carried out to the target side of the second substrate, is formed with the target side in the second substrate multiple recessed
It falls into；
The first sacrificial layer is made in the bottom of each recess；
Target side based on the second substrate deposits second sacrificial layer；
Target side based on second sacrificial layer makes conductive layer.
3. micro- light emitting diode matrix production method as claimed in claim 2, which is characterized in that described sacrificial based on described second
Domestic animal layer target side make conductive layer the step of include:
The first metal layer is deposited in each recess；
Target side depositing second metal layer based on the first metal layer, wherein the second metal layer is used for and the figure
The bonding of case luminescent layer.
4. micro- light emitting diode matrix production method as claimed in claim 2, which is characterized in that the knot of first sacrificial layer
Structure includes cuboid, triangular pyramid and cylinder.
5. micro- light emitting diode matrix production method as described in claim 1, which is characterized in that described by the patterning
After the step of luminescent layer is bonded with the patterning bonded layer, micro- light emitting diode matrix production method is also wrapped
It includes:
The first substrate is removed from the patterning luminescent layer；
The patterning luminescent layer is performed etching, to form multiple independent luminescence chips.
6. micro- light emitting diode matrix production method as described in claim 1, which is characterized in that described by the patterning
Before the step of luminescent layer is bonded with the patterning bonded layer, micro- light emitting diode matrix production method is also wrapped
It includes:
The patterning luminescent layer is performed etching, to form multiple independent luminescent layers；
Described the step of being bonded the patterning luminescent layer with the patterning bonded layer includes:
Each luminescent layer is bonded to the patterning bonded layer, to form multiple independent luminescence chips.
7. micro- light emitting diode matrix production method as described in claim 1, which is characterized in that described based on first substrate
The step of side fabricating patterned luminescent layer includes:
Side based on the first substrate successively epitaxial growth n type semiconductor layer, quantum well layer and p type semiconductor layer；
The side fabricating patterned transparency conducting layer far from the first substrate based on the p type semiconductor layer；
The side far from the first substrate based on the patterned transparent conductive layer makes reflective metal layer, barrier metal layer
And first bonding metal layer.
8. a kind of bonding substrate, which is characterized in that the bonding substrate includes:
The second substrate；
Patterning bonded layer positioned at the second substrate side；
Wherein, the patterning bonded layer includes sacrificial layer.
9. bonding substrate as claimed in claim 8, which is characterized in that the sacrificial layer includes that the first sacrificial layer and second are sacrificed
Layer, the second substrate includes multiple recess, and first sacrificial layer is set to the bottom of each recess, second sacrificial layer
It is covered on the second substrate and first sacrificial layer.
10. a kind of luminescence chip, which is characterized in that the luminescence chip includes:
Luminescent layer；
The bonded layer being connect with the luminescent layer；
Wherein, the side far from the luminescent layer of the bonded layer is provided with patterning mounting portion.
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