CN107482030B - Micro- LED component and preparation method thereof - Google Patents
Micro- LED component and preparation method thereof Download PDFInfo
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- CN107482030B CN107482030B CN201710638221.5A CN201710638221A CN107482030B CN 107482030 B CN107482030 B CN 107482030B CN 201710638221 A CN201710638221 A CN 201710638221A CN 107482030 B CN107482030 B CN 107482030B
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- 238000002360 preparation method Methods 0.000 title abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 229910052751 metal Inorganic materials 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000005520 cutting process Methods 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 39
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 238000012986 modification Methods 0.000 claims description 9
- 230000004048 modification Effects 0.000 claims description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 6
- 230000004927 fusion Effects 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 238000012546 transfer Methods 0.000 abstract description 3
- 238000000407 epitaxy Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
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- 238000005516 engineering process Methods 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 239000007771 core particle Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
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- 230000035484 reaction time Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
- H01L33/0012—Devices characterised by their operation having p-n or hi-lo junctions p-i-n devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of micro- LED component and preparation method thereof, using plasma direct etching epitaxial wafer makes micron-sized LED element, without shifting LED element, wherein it is not necessarily to peeling liner bottom, but directly in substrate interior aperture, through-hole is formed, the metal backing as cathode passes through through-hole and directly contacts with epitaxial wafer.And when making the through-hole in substrate, the method combined using longitudinal repeatedly stealthy cutting and laser scribing makes through-hole, and method is simple, easy to operate.The present invention devises the hard contact positioned at transparent upper cover plate periphery as anode, directly connection positive and negative electrode, and shining for a control LED element may be implemented, carry out routing and transfer operation without small size LED element in the micron-scale.
Description
Technical field
The invention belongs to micro- LED component field more particularly to it is a kind of using extension grade welding manner make micro- LED component and
Its production method.
Background technique
Current GaN chip manufacturing process is first to go out core particles figure in extension on piece cover, then etches again and plates out electrode etc..
Individual core particles one by one are divided out, finally for using.Process flow is long and complicated, with increasing for process, relative anomalies
Risk also has increase.
Common display is often LCD display at present, and more advantage is OLED display, but its pixel distance exists
Millimeter rank, cannot achieve micron order.And the pixel distance of display can be reduced to micron order by MicroLED.Micro
Light-emitting diode display, i.e. LED miniatureization and matrixing technology.Refer to the LED of high density microsize integrated on a single die
Array.Micro LED has the characteristics that high efficiency, high brightness, high-reliability and reaction time are fast, and has self-luminous without back
The characteristic of light source, more energy conservation, the advantages such as mechanism is simple, small in size, slim.
The processing procedure of currently used Micro light-emitting diode display includes three categories:
(1) chip-scale is welded, i.e., the Micro LED chip that LED is directly carried out to being cut into micron grade is (thin containing epitaxy
Film and substrate), using SMT technology or COB technology, display base is bonded in by Micro LED chip mono- one of micron grade
On plate.
(2) extension grade is welded, i.e., uses inductive couple plasma ion(ic) etching (ICP) in the epitaxy film layer of LED, directly
The Micro-LED epitaxy membrane structure of micron grade is formed, the constant spacing of this structure is spacing needed for display pixel, then
LED wafer (containing epitaxial layer and substrate) is directly bonded to finally remove using physically or chemically mechanism in drive circuit substrate
Substrate only remains 4 ~ 5 microns of Micro-LED epitaxy membrane structures in forming display pixel in drive circuit substrate.
(3) film shifts, i.e., removes LED substrate using physically or chemically mechanism, thin with temporary substrate carrying LED epitaxial growth
Film layer recycles inductive couple plasma ion(ic) etching, forms the Micro-LED epitaxy membrane structure of micron grade；Alternatively, first
Using inductive couple plasma ion(ic) etching, the Micro-LED epitaxy membrane structure of micron grade is formed, physics or change are reused
Mechanism removes LED substrate, carries LED epitaxial growth membrane structure with a temporary substrate.Finally, according to required in drive circuit substrate
Display draw vegetarian refreshments spacing, using selective transfer tool, Micro LED epitaxial growth membrane structure is subjected to batch and is turned
It moves, is bonded in drive circuit substrate and forms display pixel.
Summary of the invention
The present invention discloses micro- LED component in its one side, including at least a substrate, is alternatively arranged in the plural number on substrate
A LED element, the LED element include at least the epitaxial wafer and transparency conducting layer stacked gradually, it is characterised in that: the plural number
A LED element shares a substrate；The substrate interior and LED element corresponding position have a plurality of through-holes through substrate；
The back side of the substrate also has metal backing, and the metal backing has a plurality of protrusions corresponding with through-hole, the protrusion
It electrically conducts in insertion through-hole and with epitaxial wafer；The LED surface is also equipped with a transparent cover plate, and the transparent cover plate includes transparent
Upper cover plate, plural conductive cushion block, a plurality of hard contacts and plural conductive line, the conductive cushion block are located at transparent upper cover plate
Lower surface is simultaneously corresponding with LED element position, and the hard contact is located at the periphery of transparent upper cover plate lower surface, and the conductor wire connects
Connect conductive cushion block and hard contact；After the transparent cover plate and metal backing access power supply, injects a current into LED element, make
LED element emits the light of certain wavelength and passes through transparent cover plate and emits.
The epitaxial wafer is P-I-N structure, including at least N-type layer, luminescent layer and the P-type layer stacked gradually.
The depth of the through-hole is greater than or equal to the thickness of the substrate.
The hard contact, conductor wire, conductive cushion block, LED element, the number of protrusion are identical.
The metal backing is structure as a whole, and a plurality of LED elements share a metal backing.
The metal backing is made of a plurality of sub- metal backings electrically isolated, each sub- metal backing and one
LED element is corresponding；The hard contact, conductor wire, conductive cushion block, LED element, sub- metal backing, the number of protrusion are identical.
The structure of the metal backing is the multilayer of gold or chromium or platinum or titanium or nickel single layer structure or any several formation
Structure.
The structure of the hard contact is the multilayer of gold or chromium or platinum or titanium or nickel single layer structure or any several formation
Structure.
The conductive cushion block, conductor wire, electrically conducting transparent layer material are identical, are tin indium oxide or zinc oxide or the oxidation of indium zinc
Object.
The material of the transparent upper cover plate is glass or sapphire.
The width of the LED element is 80 ~ 100 microns.
The present invention on the other hand, additionally provides the production method for making above-mentioned micro- LED component, specifically includes following step
It is rapid:
S1, a substrate is provided；
Epitaxial wafer is deposited on S2, Yu Suoshu substrate；
S3, Yu Suoshu epitaxial wafer surface are coated with transparency conducting layer；
S4, by the top etch of the transparency conducting layer to epitaxial wafer bottom, form a plurality of spaced LED members
Part, each LED element include the epitaxial layer and transparency conducting layer stacked gradually；
S5, the substrate is thinned；
S6, Yu Suoshu substrate interior are longitudinally carried out repeatedly using laser in the substrate interior close to LED element side stealthy
Cutting forms modification column corresponding with LED element position；
S7, scribing, the shape in the substrate are carried out on the substrate back surface and modification column corresponding position using laser
At the through-hole for running through substrate；
S8, dry etching is carried out to the side wall of the through-hole, makes the smooth-sided of through-hole；
S9, metal backing is coated in the substrate back；
S10, a transparent cover plate is provided, the transparent cover plate includes transparent upper cover plate, plural conductive cushion block, a plurality of gold
Belong to contact and plural conductive line, the conductive cushion block is located at transparent upper cover plate lower surface and corresponding with LED element position, described
Hard contact is located at the periphery of transparent upper cover plate lower surface, the conductor wire connection conductive cushion block and hard contact；
S11, the transparent cover plate is placed in LED element surface, the cover board and LED is made by fusion of annealing after bonding
Elements into intimate combines, and after the transparent cover plate and metal backing access power supply, injects a current into LED element, sends out LED element
It penetrates the light of certain wavelength and passes through transparent cover plate and emit.
Preferably, the lithographic method in the step S4 is plasma etching.
Preferably, 3 stealths are longitudinally carried out from the bottom of LED element to substrate back using laser in the step S6 to cut
It cuts.
Preferably, the conductive cushion block and the temperature range of transparency conducting layer annealing fusion are 400 ~ 600 DEG C.
The present invention provides a kind of method for making micro- LED component using extension grade welding manner, and using plasma is direct
It etches epitaxial wafer and makes micron-sized LED element, without shifting LED element, wherein it is not necessarily to peeling liner bottom, but directly in substrate
Internal openings form through-hole, and it is directly in electrical contact with epitaxial wafer that the metal backing as cathode passes through through-hole.And in production substrate
When interior through-hole, the method combined using longitudinal repeatedly stealthy cutting and laser scribing makes through-hole, method is simple, operation side
Just.The present invention devises the hard contact positioned at transparent upper cover plate periphery as anode, directly connection positive and negative electrode, may be implemented
Point control LED element shines, and carries out routing and transfer operation without small size LED element in the micron-scale.Micro- LED device
In part, each carries out the corresponding LED element in contact and therefore a sub- metal backing is equivalent to LED element and is coupled
Structure can individually control shining for single led element.
Detailed description of the invention
Fig. 1 is micro- LED component side structure schematic view of embodiments of the present invention one.
Fig. 2 is micro- LED component overlooking structure diagram of embodiments of the present invention one.
Fig. 3 is the transparent cover plate present invention looks up structural representation of embodiments of the present invention one.
Fig. 4 is micro- LED component present invention looks up structural representation of embodiments of the present invention one.
Fig. 5 is micro- LED component production method flow diagram of embodiments of the present invention one.
Fig. 6 is micro- LED component side structure schematic view of embodiments of the present invention two.
Specific embodiment
The present invention is more specifically described by way of example referring to attached drawing in the following passage.It is wanted according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that attached drawing is all made of very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Embodiment 1
Referring to attached drawing 1, the present invention discloses micro- LED component in its one side, including at least a substrate 10, be alternatively arranged in
A plurality of LED elements on substrate 10, a plurality of LED elements share a substrate 10, and periodic arrangement on substrate 10 (such as
Shown in Fig. 2), 10 inside of substrate has a plurality of through-holes 12 through substrate with LED element corresponding position, and the back side of substrate 10 is also
With metal backing 40, metal backing 40 has a plurality of corresponding with through-hole 12 raised 41, and protrusion 41 is inserted into through-hole 12 simultaneously
It electrically conducts with epitaxial wafer 20, LED element surface is also equipped with a transparent cover plate 50.10 material of substrate can be sapphire, carbonization
Silicon, silicon etc. can be patterned substrate, or plain film substrate, the preferred graphical sapphire substrate of the present embodiment.
Wherein, LED element includes at least the epitaxial wafer 20 and transparency conducting layer 30 stacked gradually, and epitaxial wafer 20 is P-I-N
Structure, including at least N-type layer, luminescent layer and the P-type layer stacked gradually, material needed according to the luminescent color of epitaxial wafer and
It is fixed, such as n-GaN/InGaN/p-GaN is blue light epitaxial wafer, the width of LED element is 80 ~ 100 microns, which is less than conventional
The size of white-light illuminating LED, therefore when it is applied to light-emitting diode display, pixel is higher.Transparency conducting layer 30 plays current expansion
Effect, it is preferably tin indium oxide (ITO) in this implementations that material, which is tin indium oxide or zinc oxide or indium-zinc oxide,.It is logical
The depth in hole 12 is greater than or equal to the thickness of micro- LED component substrate 10, and the depth of preferably through-hole 12 is equal to micro- LED in the present embodiment
The thickness of device substrate 10.Correspondingly, the height of protrusion 41 and diameter are consistent with the depth of through-hole 12 and diameter.Metal backing
40 are structure as a whole, and a plurality of LED elements share a metal backing 40.The metal backing 40 of integral structure is in production, system
Journey is relatively simple, only a step processing procedure is needed to can be completed, and material is metal, such as gold or chromium or platinum or titanium or nickel, and structure can be with
Electric conductivity can be selected in the present embodiment in the multilayered structure of the single layer structure or any several formation that are formed for a kind of aforementioned metal
Preferable gold monolayers structure, or multilayered structure made of being folded as gold/chromium/platinum/titanium/nickel layer.10 nothing of substrate in the present invention
It needs to remove, and is utilized in the mode of 10 open interior of substrate, make the protrusion 41 of metal backing 40 and epitaxial layer 20 in electrical contact, infuse
Enter electric current.
Referring to attached drawing 1,3 and 4, transparent cover plate 50 is by transparent upper cover plate 51, plural conductive cushion block 52, hard contact 53
It is formed with conductor wire 54.Specifically, the size of upper cover plate 51 is greater than the size of substrate 10, shape is identical, such as is conventional make
Circle (referring specifically to attached drawing 4).Transparent upper cover plate 51 is made of transparent material, such as glass or sapphire, this implementation
Glass is preferably used in example, it is therefore an objective to which the light for emitting LED element penetrates transparent upper cover plate 51, realizes micro- LED component
Shine.
Conductive cushion block 52 is located at the lower surface of upper cover plate 51, corresponding with LED element matching, including position correspondence and number
Corresponding, i.e. the number of conductive cushion block 52 is consistent with LED element.Conductive cushion block 52 can be metal or tin indium oxide, zinc oxide
Or indium-zinc oxide material is made, in the present embodiment be preferably tin indium oxide identical with the material of transparency conducting layer 30, two
The fastness of adherency can be enhanced by bonding in person.The size of conductive cushion block 52 can be equal to, be less than or greater than transparency conducting layer
30 size, specifically can be set as needed, and the size of both the present embodiment is identical, such as width is 80-100 microns, just
In subsequent bonding.
Hard contact 53 is distributed in the periphery of upper cover plate 51, the corresponding LED element of each hard contact 53, therefore two
The number of person is identical, and material is metal, such as gold or chromium or platinum or titanium or nickel, and structure can be that a kind of aforementioned metal is formed
The preferable gold monolayers structure of electric conductivity can be selected in the present embodiment in single layer structure or the multilayered structure of any several formation,
It can be multilayered structure made of being folded as gold/chromium/platinum/titanium/nickel layer.One in each hard contact 53 and metal backing 40
Protrusion 41 constitutes the positive and negative electrode of the element of LED, is LED element Injection Current, it is made to shine.
To connect hard contact 53 and conductive cushion block 52 electrically, connected between the two using conductor wire 54, conductor wire 54
Material can be metal, or tin indium oxide or zinc oxide or indium-zinc oxide, due to subsequent conductive cushion block 52
When being bonded with transparency conducting layer 30, conductor wire 54 is also fused with transparency conducting layer 30 simultaneously, therefore preferred conductive in the present embodiment
The material of line 54 is tin indium oxide.In order to use LED element applied to display, set in the present invention at the back side of LED element
It counts metal backing 40 and is used as cathode, in its frontal design hard contact 53 as anode, when metal backing 40 and hard contact 53
After connecting with outer source current, electric current injects in LED element, it is made to emit the light of certain wavelength, uses for display.
Referring to attached drawing 5, to make above-mentioned micro- LED component, the present invention provides its production methods, specifically include following step
It is rapid:
S1, a substrate 10 is provided；
S2, on substrate 10 deposit epitaxial wafer 20；
S3, transparency conducting layer 30 is coated in 20 surface of epitaxial wafer；
S4, by the top etch of transparency conducting layer 30 to 20 bottom of epitaxial wafer, form a plurality of spaced LED members
Part；LED element includes the epitaxial layer 20 and transparency conducting layer 30 stacked gradually；Lithographic method using plasma etching；
S5, organic semiconductor device 10；
S6, using laser, longitudinal progress is repeatedly stealthy inside the substrate 10 close to LED element side inside substrate 10
Cutting specifically longitudinally carries out 3 stealthy cuttings from the bottom of LED element to 10 back side of substrate, is formed and LED element position pair
The modification column 11 answered；Modification column 11 is the sapphire that changes of material properties, the purpose being repeatedly cut by laser be in order to
In subsequent laser scribing, through-hole 12 can be formed relatively easily by substrate aperture；
S7, scribing is carried out in 10 backside surface of substrate and modification 11 corresponding position of column using laser, is formed in substrate 10
Through the through-hole 12 of substrate；The material of modification column 11 is released from through-hole 12；
S8, dry etching is carried out to the side wall of through-hole 12, makes the smooth-sided of through-hole 12.Smooth 12 side wall of through-hole is more just
In the processing procedure of subsequent production metal backing 40；
S9, metal backing 40 is coated in substrate back；It can be using sputtering method or vapour deposition method or electroless plating production gold
Belong to backboard 40；
S10, a transparent cover plate 50 is provided, transparent cover plate 50 includes transparent upper cover plate 51, plural conductive cushion block 52, plural number
A hard contact 53 and plural conductive line 54, conductive cushion block 42 be located at 51 lower surface of transparent upper cover plate and with LED element position
Corresponding, hard contact 53 is located at the periphery of 51 lower surface of transparent upper cover plate, and conductor wire 54 connects conductive cushion block 52 and hard contact
53；
S11, transparent cover plate 50 is placed in LED element surface, transparent cover plate 50 and LED is made by fusion of annealing after bonding
Elements into intimate combines, and after transparent cover plate 50 and the access power supply of metal backing 40, injects a current into LED element, sends out LED element
It penetrates the light of certain wavelength and passes through transparent cover plate 50 and emit, the temperature of annealing is preferably 400 ~ 600 DEG C.
The present invention provides a kind of method for making micro- LED component using extension grade welding manner, and using plasma is direct
It etches epitaxial wafer and makes micron-sized LED element, without shifting LED element, wherein being not necessarily to peeling liner bottom 10, but directly serving as a contrast
10 internal openings of bottom form through-hole 12, and it is directly in electrical contact with epitaxial wafer 20 that the metal backing 40 as cathode passes through through-hole 12.
And when making the through-hole 12 in substrate 10, the method combined using longitudinal repeatedly stealthy cutting and laser scribing makes through-hole
12, method is simple, easy to operate.The present invention devises the hard contact 53 positioned at 51 periphery of transparent upper cover plate as anode, directly
Connection positive and negative electrode, LED element can carry out it is luminous, without in the micron-scale small size LED element carry out routing behaviour
Make.
Embodiment 2
Referring to attached drawing 6, in the present embodiment, in order to keep the heat dissipation effect of micro- LED component more preferable, metal backing 40 be can be set
It is formed at by a plurality of sub- metal backings 42 electrically isolated.Each sub- metal backing 42 and each LED element, conductive cushion block
52, hard contact 53, conductor wire 54 are corresponding, and number is identical.
In micro- LED component, the corresponding LED element of each hard contact 53 and a sub- metal backing 42, therefore,
It is equivalent to LED element parallel-connection structure, can individually control shining for single led element.
It should be understood that above-mentioned specific embodiment is the preferred embodiment of the present invention, the scope of the present invention is not limited to
The embodiment, all any changes done according to the present invention, all within category protection scope of the present invention.
Claims (16)
1. micro- LED component including at least a substrate, is alternatively arranged in a plurality of LED elements on substrate, the LED element is extremely
Few includes the epitaxial wafer and transparency conducting layer stacked gradually, it is characterised in that:
A plurality of LED elements share a substrate；
The substrate interior and LED element corresponding position have a plurality of through-holes through substrate；
The back side of the substrate also has metal backing, and the metal backing has a plurality of protrusions corresponding with through-hole, described
It electrically conducts in protrusion insertion through-hole and with epitaxial wafer；
The LED surface is also equipped with a transparent cover plate, and the transparent cover plate includes transparent upper cover plate, plural conductive cushion block, answers
Several hard contacts and plural conductive line, the conductive cushion block be located at transparent upper cover plate lower surface and with LED element position pair
It answers, the hard contact is located at the periphery of transparent upper cover plate lower surface, the conductor wire connection conductive cushion block and hard contact；
After the transparent cover plate and metal backing access power supply, injects a current into LED element, LED element is made to emit a standing wave
Long light simultaneously passes through transparent cover plate transmitting.
2. micro- LED component according to claim 1, it is characterised in that: the epitaxial wafer is P-I-N structure, is included at least
N-type layer, luminescent layer and the P-type layer stacked gradually.
3. micro- LED component according to claim 1, it is characterised in that: the depth of the through-hole is greater than or equal to the lining
The thickness at bottom.
4. micro- LED component according to claim 1, it is characterised in that: the hard contact, conductor wire, conductive cushion block,
LED element, the number of protrusion are identical.
5. micro- LED component according to claim 1, it is characterised in that: the metal backing is structure as a whole, the plural number
A LED element shares a metal backing.
6. micro- LED component according to claim 1, it is characterised in that: the metal backing is electrically isolated by a plurality of
Sub- metal backing composition, each sub- metal backing are corresponding with a LED element.
7. micro- LED component according to claim 6, it is characterised in that: the hard contact, conductor wire, conductive cushion block,
LED element, sub- metal backing, the number of protrusion are identical.
8. micro- LED component according to claim 1, it is characterised in that: the metal backing be gold or chromium or platinum or titanium or
Nickel single layer structure or the multilayered structure of any several formation.
9. micro- LED component according to claim 1, it is characterised in that: the hard contact be gold or chromium or platinum or titanium or
Nickel single layer structure or the multilayered structure of any several formation.
10. micro- LED component according to claim 1, it is characterised in that: the conductive cushion block, conductor wire, transparency conducting layer
Material is identical, is tin indium oxide or zinc oxide or indium-zinc oxide.
11. micro- LED component according to claim 1, it is characterised in that: the material of the transparent upper cover plate be glass or
Sapphire.
12. micro- LED component according to claim 1, it is characterised in that: the width of the LED element is 80 ~ 100 microns.
13. the production method of micro- LED component, steps are as follows for specific method:
S1, a substrate is provided；
Epitaxial wafer is deposited on S2, Yu Suoshu substrate；
S3, Yu Suoshu epitaxial wafer surface are coated with transparency conducting layer；
S4, by the top etch of the transparency conducting layer to epitaxial wafer bottom, form a plurality of spaced LED elements, often
One LED element includes the epitaxial layer and transparency conducting layer stacked gradually；
S5, the substrate is thinned；
S6, Yu Suoshu substrate interior longitudinally carry out repeatedly stealthy cutting in the substrate interior close to LED element side using laser,
Form modification column corresponding with LED element position；
S7, scribing is carried out on the substrate back surface and modification column corresponding position using laser, is formed and is passed through in the substrate
Wear the through-hole of substrate；
S8, dry etching is carried out to the side wall of the through-hole, makes the smooth-sided of through-hole；
S9, metal backing is coated in the substrate back；
S10, a transparent cover plate is provided, the transparent cover plate includes transparent upper cover plate, plural conductive cushion block, the touching of a plurality of metals
Point and plural conductive line, the conductive cushion block are located at transparent upper cover plate lower surface and, the metal corresponding with LED element position
Contact is located at the periphery of transparent upper cover plate lower surface, the conductor wire connection conductive cushion block and hard contact；
S11, the transparent cover plate is placed in LED element surface, the cover board and LED element is made by fusion of annealing after bonding
It electrically combines, after the transparent cover plate and metal backing access power supply, injects a current into LED element, LED element is made to emit one
The long light of standing wave simultaneously passes through transparent cover plate transmitting.
14. the production method of micro- LED component according to claim 13, it is characterised in that: the etching in the step S4
Method is plasma etching.
15. the production method of micro- LED component according to claim 13, it is characterised in that: use laser in substrate interior
3 stealthy cuttings are longitudinally carried out from the bottom of LED element to substrate back, form modification column corresponding with LED element position.
16. the production method of micro- LED component according to claim 13, it is characterised in that: led described in the step S11
Electrical pad block and the temperature range of transparency conducting layer annealing fusion are 400 ~ 600 DEG C.
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| CN110660886A (en) * | 2018-06-28 | 2020-01-07 | 山东浪潮华光光电子股份有限公司 | Preparation method of reversed polarity AlGaInP quaternary LED chip |
| CN111161641B (en) * | 2019-12-30 | 2021-11-23 | 重庆康佳光电技术研究院有限公司 | Narrow-frame display backboard, preparation method thereof and display |
| CN114975699B (en) * | 2022-07-27 | 2022-09-27 | 北京大学 | Monolithic integration preparation method of full-color nitride semiconductor Micro-LED array |
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