CN112582295A - Wafer processing equipment and cleaning method of wafer carrier - Google Patents
Wafer processing equipment and cleaning method of wafer carrier Download PDFInfo
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- CN112582295A CN112582295A CN201910931796.5A CN201910931796A CN112582295A CN 112582295 A CN112582295 A CN 112582295A CN 201910931796 A CN201910931796 A CN 201910931796A CN 112582295 A CN112582295 A CN 112582295A
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- air
- gas
- guide tray
- wafer carrier
- bearing surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
Abstract
The invention relates to a wafer processing device and a cleaning method of a wafer carrier. The wafer carrier is provided with a blowing channel. The air outlet of the air blowing channel is formed on the bearing surface of the wafer carrier. The air source supply device is communicated with the air inlet of the air blowing channel. The guide tray is arranged above the bearing surface, the bottom surface of the guide tray is opposite to the air outlet, and an air flow gap is formed between the bottom surface of the guide tray and the bearing surface. The gas source providing device sends gas into the wafer carrier through the gas blowing channel, the gas is discharged from the gas outlet of the gas blowing channel, and the gas discharged from the gas outlet is blown towards the edge direction of the bearing surface through the gas flow gap under the guiding action of the guiding tray, so that particles on the bearing surface and on the edge of the wafer carrier can be blown and cleaned. In addition, in the process of cleaning the wafer carrier, the guide tray can bear particles falling in the cavity, and the particles are prevented from falling on the bearing surface.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing technologies, and in particular, to a wafer processing apparatus and a cleaning method for a wafer carrier.
Background
Conventionally, wafers are carried in a closed chamber manufacturing process by using a wafer carrier, such as an electrostatic chuck. As polymer is generated and deposited during chamber processing, particulate matter tends to adhere to the surfaces and edges of the wafer carrier and to a greater area within the chamber. The particles accumulated on the wafer carrier can affect the local temperature control effect, which causes defects such as warpage to occur on the local and edge of the wafer, the etching uniformity of the wafer with the defects is poor, and the product yield is obviously reduced.
Disclosure of Invention
Accordingly, it is necessary to overcome the defects of the prior art and provide a wafer processing apparatus and a cleaning method for a wafer carrier, which can conveniently clean off particles attached to the wafer carrier and have a good cleaning effect.
The technical scheme is as follows: a wafer processing apparatus comprising: the wafer carrier is provided with an air blowing channel, and an air outlet of the air blowing channel is formed on a bearing surface of the wafer carrier; the air source providing device is communicated with the air inlet of the air blowing channel; the guide tray is arranged above the bearing surface, the bottom surface of the guide tray is opposite to the air outlet, and an air flow gap is formed between the bottom surface of the guide tray and the bearing surface.
According to the wafer processing equipment, when the wafer carrier needs to be cleaned, the wafer is not placed on the bearing surface of the wafer carrier, the guide tray is placed on the bearing surface of the wafer carrier, the gas source providing device is started, gas is sent into the gas source providing device through the blowing channel and is discharged outside the gas outlet of the blowing channel, and gas discharged from the gas outlet is blown towards the edge direction of the bearing surface through the gas flow gap under the guiding action of the guide tray, so that particles on the bearing surface and on the edge of the wafer carrier can be blown and cleaned. In addition, in the process of cleaning the wafer carrier, the guide tray can bear particles falling in the cavity, and the particles are prevented from falling on the bearing surface. Therefore, the wafer carrier is convenient to clean particles attached to the wafer carrier, the cleaning effect is good, the temperature control uniformity of the wafer carrier can be maintained, the process uniformity of the wafer is improved, the defect of the wafer caused by the particles attached to the bearing surface is reduced, the PM period is prolonged, and the productivity is increased.
In one embodiment, the air source provided by the air source providing device is exhausted from the air outlet and blows towards the bottom surface of the guide tray, so as to adjust the air flow gap between the bottom surface of the guide tray and the bearing surface; or the bottom surface of the guide tray is provided with a plurality of support legs, and the support legs are placed on the bearing surface.
In one embodiment, the air outlet is formed in the middle of the bearing surface; or the air blowing channels are multiple, the air outlets are wound on the bearing surface at intervals, the opening walls of the air outlets are oblique side walls or arc-shaped side walls, and the opening walls of the air outlets are used for guiding air flow to the edge parts, adjacent to the air outlets, on the bearing surface.
In one embodiment, the number of the air blowing channels is multiple, the air outlet of one air blowing channel is formed in the middle of the bearing surface, the air outlets of the other air blowing channels are wound on the bearing surface at intervals, the opening walls of the air outlets of the other air blowing channels are oblique side walls or arc-shaped side walls, and the air outlets of the other air blowing channels are used for blowing air flow to the edge part, adjacent to the air outlet, of the bearing surface.
In one embodiment, the blowing channel comprises a main channel and a plurality of sub-channels; one end of the main channel is communicated with the air source supply device, and the other end of the main channel is respectively communicated with the branch channels; the ports of the sub-channels are arranged at the middle part of the bearing surface at intervals in an annular shape; the sub-channels are arc-shaped channels or inclined channels which are obliquely arranged relative to the bearing surface.
In one embodiment, the wafer processing apparatus further includes a gas injection mechanism disposed above the guide tray, and the gas injection mechanism is configured to blow gas toward the top surface of the guide tray.
In one embodiment, the air injection mechanism comprises a plurality of nozzles, and the nozzles are arranged above the guide tray in an angle-adjustable manner.
In one embodiment, the wafer processing equipment further comprises a shell provided with a cavity, and an air extractor arranged outside the cavity, wherein an air extracting pipe of the air extractor is communicated with the cavity and used for vacuumizing the cavity; the wafer carrier and the guide tray are arranged in the cavity, and the air source providing device is arranged outside the cavity.
In one embodiment, the wafer carrier comprises an electrostatic chuck and an edge ring disposed circumferentially around the electrostatic chuck; the wafer processing equipment also comprises a refrigerating device, wherein the refrigerator is in contact with the edge ring and is used for reducing the temperature of the edge ring.
A cleaning method of a wafer carrier adopts the wafer processing equipment, and comprises the following steps:
loading the guide tray into the chamber and placing the guide tray above the wafer carrier;
and opening the gas source supply device to introduce gas into the blowing channel, wherein the gas at the gas outlet of the blowing channel is blown to the bottom surface of the guide tray and flows towards the edge of the bearing surface through the gas flow gap.
According to the cleaning method of the wafer carrier, when the wafer carrier needs to be cleaned, the wafer is not placed on the bearing surface of the wafer carrier, but the guide tray is placed, the gas source providing device is started, gas is fed into the gas source providing device through the gas blowing channel and is discharged outside through the gas outlet of the gas blowing channel, and the gas discharged from the gas outlet is blown towards the edge direction of the bearing surface through the gas flow gap under the guiding action of the guide tray, so that particles on the bearing surface and on the edge of the wafer carrier can be blown and cleaned. In addition, in the process of cleaning the wafer carrier, the guide tray can bear particles falling in the cavity, and the particles are prevented from falling on the bearing surface. Therefore, the wafer carrier is convenient to clean particles attached to the wafer carrier, the cleaning effect is good, the temperature control uniformity of the wafer carrier can be maintained, the process uniformity of the wafer is improved, the defect of the wafer caused by the particles attached to the bearing surface is reduced, the PM period is prolonged, and the productivity is increased.
In one embodiment, the specific method for loading the guide tray into the chamber and placing the guide tray above the wafer carrier is as follows:
the shape of the guide tray is matched with that of the wafer, and the guide tray is conveyed into the cavity by the wafer conveying disc.
In one embodiment, the pressure of the air flow which is introduced into the air blowing channel by the air source providing device is controlled, so that the tray can be lifted by the air from the air outlet of the air blowing channel to form the air flow gap.
In one embodiment, the method for adjusting the size of the airflow gap includes: adjusting the pressure of the air flow which is introduced into the air blowing channel by the air source providing device, and/or adjusting the self weight of the guide tray; the step of loading the guide tray into the chamber and placing the guide tray above the wafer carrier further comprises the following steps: and starting the air injection mechanism, and injecting air to the top surface of the guide tray through the air injection mechanism.
Drawings
Fig. 1 is a schematic structural diagram of a wafer processing apparatus according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a wafer processing apparatus according to another embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a wafer processing apparatus according to yet another embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a wafer processing apparatus according to yet another embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a wafer processing apparatus according to yet another embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a wafer processing apparatus according to yet another embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a wafer processing apparatus according to yet another embodiment of the present invention;
fig. 8 is a flowchart illustrating a method for cleaning a wafer carrier according to an embodiment of the invention.
Reference numerals:
10. a wafer carrier; 11. an air blowing channel; 111. a main channel; 112. dividing channels; 12. an electrostatic chuck; 13. an edge ring; 20. a gas source providing device; 21. an air tube; 22. a control valve; 30. a guide tray; 31. a support leg; 40. an air flow gap; 50. an air injection mechanism; 51. a nozzle; 60. a housing; 61. a chamber; 70. an air extraction device; 80. a refrigeration device.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
In the description of the present invention, it is to be understood that the terms "first", "second" and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the description of the present invention, it should be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly connected" to another element, there are no intervening elements present.
In one embodiment, referring to fig. 1, a wafer processing apparatus includes a wafer carrier 10, a gas supply device 20, and a guide tray 30. The wafer carrier 10 is provided with a gas blowing channel 11. The air outlet of the air blowing channel 11 is formed on the carrying surface of the wafer carrier 10. The air inlets of the air blowing channels 11 may be formed on the bottom surface of the wafer carrier 10, as shown in any one of fig. 1 to 7, the air inlets of the air blowing channels 11 are all formed on the bottom surface of the wafer carrier 10. Of course, the gas inlet of the gas blowing channel 11 can also be formed at the side of the wafer carrier 10, so that the gas source flows in from the gas inlet at the side of the wafer carrier 10 and flows out from the gas outlet on the carrying surface, and the gas can be blown to the guiding tray 30. More specifically, if the plurality of air blowing channels 11 are inclined channels or arc-shaped channels extending from the side surface of the wafer carrier 10 to the carrying surface of the wafer carrier 10, under the combined action of the plurality of air blowing channels 11, on one hand, the air in the air blowing channels 11 can lift the guide tray 30, and on the other hand, each air blowing channel 11 can also quickly guide the air flow to different edge portions of the carrying surface, so as to achieve a better cleaning effect on the particles attached to the carrying surface.
The air supply device 20 is communicated with the air inlet of the air blowing channel 11. Specifically, the gas provided by the gas source providing device 20 is an inert gas, such as nitrogen, helium, argon, etc., and the gas source providing device 20 blows the inert gas through the gas blowing channel 11 and has a better cleaning effect on the particles on the wafer carrier 10 after being sprayed out from the gas outlet of the gas blowing channel 11. Alternatively, the air supply means 20 communicates with the air inlet of the insufflation passage 11 through, for example, an air tube 21.
The guide tray 30 is arranged above the bearing surface, the bottom surface of the guide tray 30 is opposite to the air outlet, and an air flow gap 40 is formed between the bottom surface of the guide tray 30 and the bearing surface.
When the wafer processing equipment needs to clean the wafer carrier 10, the wafer is not placed on the bearing surface of the wafer carrier 10, but the guide tray 30 is placed on the bearing surface of the wafer carrier 10, the gas source providing device 20 is started, gas is fed in by the gas source providing device 20 through the gas blowing channel 11 and is discharged outside through the gas outlet of the gas blowing channel 11, and the gas discharged from the gas outlet is blown towards the edge direction of the bearing surface through the gas flow gap 40 under the guiding action of the guide tray 30, so that the blowing particles on the bearing surface and on the edge of the wafer carrier 10 can be cleaned. In addition, during cleaning of the wafer carrier 10, the guide tray 30 can withstand particles falling from the chamber 61 and prevent the particles from falling onto the carrying surface. Therefore, particles attached to the wafer carrier 10 can be conveniently cleaned, the cleaning effect is good, the temperature control uniformity of the wafer carrier 10 can be maintained, the process uniformity of the wafer is improved, the defect of the wafer caused by the particles attached to the bearing surface is reduced, the PM period is prolonged, and the productivity is increased.
In one embodiment, the air source provided by the air source providing device 20 is discharged through the air outlet and blown toward the bottom surface of the guiding tray 30, so as to adjust the air flow gap 40 between the bottom surface of the guiding tray 30 and the carrying surface. Thus, on one hand, when the size of the air flow gap 40 needs to be adjusted, the operation is convenient by adjusting the pressure of the air flow which is introduced into the air blowing channel 11 by the air source providing device 20 and/or adjusting the self weight of the guide tray 30; on the other hand, the structure of the guide tray 30 is simple, plates with shapes suitable for wafers can be selected, and then the guide tray 30 can be conveyed into the cavity 61 and placed on the bearing surface by using the wafer conveying disc, so that the automation degree is high.
In another embodiment, referring to fig. 2, the bottom surface of the guiding tray 30 is provided with a plurality of legs 31, and the legs 31 are disposed on the carrying surface. Thus, the bottom surface of the guide tray 30 is spaced apart from the bearing surface by the legs 31, thereby forming the air flow gap 40. The air source of the air source providing device 20 is not required to be discharged from the air outlet to lift the guide tray 30, but is directly supported by the support legs 31 on the bottom surface of the guide tray 30, the air source of the air source providing device 20 is discharged from the air outlet and then guided by the bottom surface of the guide tray 30, and is discharged from the air flow gap 40 to the circumferential edge of the bearing surface, so that a better cleaning effect can be realized on particles on the bearing surface.
In one embodiment, referring to fig. 1, the air outlet is formed in the middle of the carrying surface. The air in the air blowing channel 11 is discharged through the air outlet and then blown to the middle of the bottom surface of the guide tray 30, and the middle of the bottom surface of the guide tray 30 is stressed, so that the air can be stably supported by the air flow discharged outwards from the air outlet. In addition, under the guiding action of the bottom surface of the guiding tray 30, the airflow discharged from the air outlet flows from the middle of the bearing surface to the circumferential edge of the bearing surface through the airflow gap 40, and particles on the bearing surface can be swept from the middle to the periphery of the bearing surface, so that the particles attached to each area of the bearing surface can be cleaned well.
Generally, more particulate matter is adhered to the edge portions of the load-supporting surface. In another embodiment, referring to fig. 3, the air blowing channels 11 are multiple, the air outlets are alternately wound on the bearing surface, the opening walls of the air outlets are oblique side walls or arc-shaped side walls, and the opening walls of the air outlets are used for guiding the air flow to the edge portions of the bearing surface adjacent to the air outlets. Thus, the gas source providing device 20 provides the gas source to each blowing channel 11, the gas is discharged outwards from each blowing channel 11, and the particles attached to the edge of the bearing surface can be cleaned better in the process that the gas discharged from the gas outlet of the blowing channel 11 is blown to the adjacent edge.
Specifically, the air supply device 20 is in one-to-one correspondence with the air inlets of the plurality of insufflation passages 11 through a plurality of air tubes 21. Each air tube 21 may be provided with a control valve 22, for example. Alternatively, a converging channel communicated with each of the blowing channels 11 may be provided on the wafer carrier 10, and the converging channel is communicated with the gas source providing device 20.
In another embodiment, referring to fig. 4, the number of the air blowing channels 11 is multiple, wherein an air outlet of one air blowing channel 11 is formed in the middle of the bearing surface, air outlets of the other air blowing channels 11 are wound on the bearing surface at intervals, mouth walls of the air outlets of the other air blowing channels 11 are oblique side walls or arc-shaped side walls, and the air outlets of the other air blowing channels 11 are used for blowing air flow to edge portions, adjacent to the air outlets, on the bearing surface. Thus, after the gas discharged outwards from the gas blowing channel 11 with the gas outlet formed in the middle of the bearing surface is guided by the guide tray 30, the gas can be blown towards the edge direction of the bearing surface through the gas flow gap 40, so that particles attached to the middle part of the bearing surface can be blown to the circumferential edge part of the bearing surface, and finally the particles are cleaned and processed from the bearing surface. In addition, the gas discharged outwards from the gas outlets of the rest of the gas blowing channels 11 respectively leads to the edge parts adjacent to the gas blowing channels on the bearing surface, so that the particles attached to the edge parts on the bearing surface can be cleaned and disposed. Therefore, under the sweeping action of the blowing channel 11 at the middle part of the bearing surface and the sweeping action of the other blowing channels 11 at the peripheral part of the bearing surface, the cleaning device can better clean particles attached to the bearing surface.
In another embodiment, referring to fig. 5 or fig. 6, the air blowing channel 11 includes a main channel 111 and a plurality of sub-channels 112. One end of the main channel 111 is communicated with the air supply providing device 20, and the other end of the main channel 111 is respectively communicated with the sub-channels 112. The ports of the sub-channels 112 are arranged at intervals and in a ring shape in the middle of the bearing surface. The sub-channels 112 are arc-shaped channels or inclined channels that are obliquely arranged relative to the bearing surface.
In one embodiment, referring to any one of fig. 1 to 7, the wafer processing apparatus further includes a gas injection mechanism 50. The gas injection mechanism 50 is disposed above the guide tray 30, and the gas injection mechanism 50 is configured to blow gas toward the top surface of the guide tray 30. Specifically, the gas ejected from the gas ejection mechanism 50 is an inert gas, such as nitrogen, helium, argon, or the like. Under the effect of jet mechanism 50, can blow the particulate matter in the cavity 61 to the top surface of tray on, realize better clean effect. The combination of the gas injection mechanism 50 and the gas source providing device 20 can effectively reduce particles attached to the wafer carrier 10 and the chamber 61, thereby maintaining the temperature control uniformity of the wafer carrier 10.
Further, the air injection mechanism 50 includes a plurality of nozzles 51. The nozzle 51 is angularly adjustably disposed above the guide tray 30. In this way, the nozzle 51 can blow the air flow to the guide tray 30 vertically or blow the air flow to the guide tray 30 obliquely, and thus, the particulate matter in the chamber 61 can be cleaned and disposed well.
As an alternative, when the guiding tray 30 is not placed on the wafer carrier 10, the inclination angle of the nozzle 51 of the gas spraying mechanism 50 may be adjusted, so that the inclination angle of the nozzle 51 is inclined toward the circumferential edge of the carrying surface of the wafer carrier 10, so that after the nozzle 51 sprays the gas onto the carrying surface of the wafer carrier 10, the gas flow direction sprayed by the nozzle 51 is inclined toward the circumferential edge of the carrying surface, thereby facilitating complete cleaning and disposal of the particles attached to the carrying surface and the edge of the wafer carrier 10.
Further, the air injection mechanism 50 further includes a micro motor connected to the nozzle 51 for driving the nozzle 51 to move to change the inclination angle of the nozzle 51. Thus, the inclination angle of the nozzle 51 does not need to be manually adjusted, and the micro motor is used for driving and adjusting, so that the automation degree is high.
In one embodiment, referring to fig. 1 and 7, the wafer processing apparatus further includes a housing 60 having a chamber 61, and a gas-extracting device 70 disposed outside the chamber 61. The air-extracting device 70 is specifically provided on the outer side wall of the housing 60, for example. The exhaust tube 21 of the exhaust device 70 extends through the sidewall of the housing 60 into the chamber 61 for evacuating the chamber 61. The wafer carrier 10 and the guiding tray 30 are both disposed in the chamber 61, and the gas source providing device 20 is disposed outside the chamber 61. In order to ensure a good air extraction effect, the air extraction device 70 is specifically a molecular pump.
In one embodiment, referring again to fig. 1 and 7, the wafer carrier 10 includes an electrostatic chuck 12 and an edge ring 13 disposed circumferentially around the electrostatic chuck 12. The wafer processing equipment further comprises a refrigerating device 80, wherein the refrigerating device 80 is in contact with the edge ring 13 and is used for reducing the temperature of the edge ring 13. The edge ring 13, also referred to as a focus ring, is designed at the edge of the cathode and serves primarily to concentrate the rf current flow to the wafer surface while protecting the cathode from plasma bombardment. Further, specifically, the air blowing passage 11 in the above embodiment is opened on the electrostatic chuck 12.
Further, referring to fig. 1 and 7, the wafer processing apparatus further includes a controller. The controller is electrically connected with the air source providing device 20, the air injection mechanism 50, the air extracting device 70, the refrigerating device 80 and the edge ring 13 respectively. When the cleaning operation of the particles on the carrier and the chamber 61 is required, the controller controls the edge ring 13 and the refrigeration device 80 to stop working, and controls the gas source providing device 20, the gas injection mechanism 50 and the air extraction device 70 to start working, so that the edge ring 13 does not have an adsorption effect on the guide tray 30, the refrigeration device 80 does not need to perform refrigeration work at this time, the air extraction device 70 continuously maintains the vacuum pumping operation on the chamber 61 to ensure the normal operation of the machine, the gas source providing device 20 introduces a gas source through the blowing channel 11, so that an air flow gap 40 is formed between the guide tray 30 and the bearing surface, the introduced gas source is blown towards the circumferential edge of the bearing surface through the air flow gap 40, meanwhile, the gas injection mechanism 50 injects gas towards the top surface of the guide tray 30, the particles in the chamber 61 can be blown onto the top surface of the tray, under the combined action of the gas injection mechanism 50 and the gas, particles adhering to the chamber 61 and the wafer carrier 10 are effectively reduced, thereby maintaining temperature uniformity of the wafer carrier 10. After the cleaning process for the wafer carrier 10 and the particles in the chamber 61 is finished, the controller controls the gas supply device 20 and the gas injection mechanism 50 to stop working, and then the guiding tray 30 is taken out, and then a next wafer can be placed on the wafer carrier 10 and the next wafer is processed and etched.
In one embodiment, referring to fig. 1 and 8, a method for cleaning a wafer carrier 10 using the wafer processing apparatus of any of the above embodiments includes the following steps:
s100, loading the guide tray 30 into the chamber 61 and placing the guide tray above the wafer carrier 10;
s200, starting the gas source providing device 20 to introduce gas into the blowing channel 11, wherein the gas at the gas outlet of the blowing channel 11 is blown to the bottom surface of the guide tray 30 and flows towards the edge of the bearing surface through the gas flow gap 40.
When the wafer carrier 10 needs to be cleaned, the wafer is not placed on the carrying surface of the wafer carrier 10, but the guiding tray 30 is placed on the carrying surface of the wafer carrier 10, the gas source providing device 20 is turned on, gas is fed in by the gas source providing device 20 through the gas blowing channel 11 and is discharged outside through the gas outlet of the gas blowing channel 11, and the gas discharged from the gas outlet is blown towards the edge direction of the carrying surface through the gas flow gap 40 under the guiding action of the guiding tray 30, so that particles on the carrying surface and on the edge of the wafer carrier 10 can be blown and cleaned. In addition, during cleaning of the wafer carrier 10, the guide tray 30 can withstand particles falling from the chamber 61 and prevent the particles from falling onto the carrying surface. Therefore, particles attached to the wafer carrier 10 can be conveniently cleaned, the cleaning effect is good, the temperature control uniformity of the wafer carrier 10 can be maintained, the process uniformity of the wafer is improved, the defect of the wafer caused by the particles attached to the bearing surface is reduced, the PM period is prolonged, and the productivity is increased.
Further, the specific method for loading the guide tray 30 into the chamber 61 and placing the guide tray above the wafer carrier 10 is as follows:
the guide tray 30 is adapted to the shape of the wafer, and the guide tray 30 is loaded into the chamber 61 by the wafer transfer tray.
Furthermore, a guiding tray 30 is correspondingly disposed at the rear of every other wafer on the wafer transfer tray, after the wafer transfer tray sequentially sends a plurality of wafers into the chamber 61 of the wafer processing equipment for sequential processing, the wafer transfer tray further sends the guiding tray 30 into the chamber 61 of the wafer processing equipment, and the above steps 100 and 200 are sequentially performed. Therefore, in the process of processing the wafers by the wafer processing equipment, after a plurality of wafers are processed, cleaning is correspondingly performed by the cleaning method of the wafer carrier 10 of the embodiment, so that the wafer carrier 10 and the chamber 61 in the wafer processing equipment can be automatically cleaned regularly, and the cleanliness of the wafer carrier 10 and the chamber 61 is ensured, thereby maintaining the temperature control uniformity of the wafer carrier 10, improving the process uniformity of the wafers, reducing the wafer defects caused by the particles attached to the bearing surface, prolonging the PM period and increasing the productivity.
Further, the pressure of the air flow from the air supply device 20 into the air blowing channel 11 is controlled so that the air from the air outlet of the air blowing channel 11 can lift the tray to form the air flow gap 40.
When the pressure of the gas flow introduced into the gas blowing channel 11 by the gas source providing device 20 is larger, the larger the gas flow gap 40 formed by the tray lifted by the gas from the gas outlet of the gas blowing channel 11 is, the better the cleaning of the carrying surface of the wafer carrier 10 and the particles attached to the edge portion of the wafer carrier 10 is.
Furthermore, the size of the airflow gap 40 is adjusted by: adjusting the pressure of the air flow from the air supply device 20 into the air blowing channel 11, and/or adjusting the weight of the guiding tray 30.
Specifically, when the air flow gap 40 needs to be increased, on one hand, the pressure of the air flow from the air supply device 20 into the air blowing channel 11 can be increased, and the self weight of the guide tray 30 is unchanged or reduced, so that the guide tray 30 can be blown to a higher position by the air flow, and the air flow gap 40 can be increased; on the other hand, the self-weight of the guiding tray 30 can be reduced, the pressure of the air flow from the air supply device 20 into the air blowing channel 11 can be kept constant or increased, and likewise, the guiding tray 30 can be blown to a higher position by the air flow, so that the air flow gap 40 can be increased.
When it is desired to decrease the airflow gap 40, it is not repeated as opposed to increasing the airflow gap 40.
In addition, when the weight of the guide tray 30 is increased, the air supply device 20 correspondingly supplies an air flow with a higher flow rate in order to enable the air flow ejected from the air outlet to lift the guide tray 30. However, during the process of flowing the air flow through the air flow gap 40 at a higher flow rate, the cleaning effect on the carrying surface of the wafer carrier 10 and the particles attached to the edge portion of the wafer carrier 10 is better.
Further, the method for cleaning the wafer carrier 10 further includes the steps of:
s300, the gas injection mechanism 50 is turned on, and the gas is injected to the top surface of the guide tray 30 through the gas injection mechanism 50.
In this way, the gas injection mechanism 50 injects gas toward the top surface of the guide tray 30, and can blow the particulate matter in the chamber 61 toward the top surface of the tray.
Further, the cleaning method of the wafer carrier 10 may be combined with a conventional waferless automatic cleaning method, i.e. the cleaning method of the wafer carrier 10 and the cleaning method of the chamber 61 may be used to clean the particles in the wafer carrier 10 and the chamber 61, and then the cleaning method of the wafer carrier 10 in the above embodiment is used to further clean the particles in the wafer carrier 10 and the chamber 61. Thus, the wafer carrier 10 and the chamber 61 can be cleaned well.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A wafer processing apparatus, comprising:
the wafer carrier is provided with an air blowing channel, and an air outlet of the air blowing channel is formed on a bearing surface of the wafer carrier;
the air source providing device is communicated with the air inlet of the air blowing channel;
the guide tray is arranged above the bearing surface, the bottom surface of the guide tray is opposite to the air outlet, and an air flow gap is formed between the bottom surface of the guide tray and the bearing surface.
2. The wafer processing apparatus as claimed in claim 1, wherein the gas source provided by the gas source providing device is exhausted through the gas outlet and blown toward the bottom surface of the guide tray for adjusting the gas flow gap between the bottom surface of the guide tray and the carrying surface; or the bottom surface of the guide tray is provided with a plurality of support legs, and the support legs are placed on the bearing surface.
3. The wafer processing apparatus as claimed in claim 1, wherein the gas outlet is formed at a middle portion of the carrying surface; or the air blowing channels are multiple, the air outlets are wound on the bearing surface at intervals, the opening walls of the air outlets are oblique side walls or arc-shaped side walls, and the opening walls of the air outlets are used for guiding air flow to the edge parts, adjacent to the air outlets, on the bearing surface.
4. The wafer processing apparatus as claimed in claim 1, wherein the plurality of the gas blowing channels are provided, wherein a gas outlet of one of the gas blowing channels is formed in a middle portion of the carrying surface, gas outlets of the other gas blowing channels are wound on the carrying surface at intervals, port walls of the gas outlets of the other gas blowing channels are oblique side walls or arc-shaped side walls, and the gas outlets of the other gas blowing channels are used for blowing gas flow to edge portions of the carrying surface adjacent to the gas outlets.
5. The wafer processing apparatus of claim 1, wherein the gas blowing channel comprises a main channel and a plurality of sub-channels; one end of the main channel is communicated with the air source supply device, and the other end of the main channel is respectively communicated with the branch channels; the ports of the sub-channels are arranged at the middle part of the bearing surface at intervals in an annular shape; the sub-channels are arc-shaped channels or inclined channels which are obliquely arranged relative to the bearing surface.
6. The wafer processing apparatus according to any one of claims 1 to 5, further comprising a gas injection mechanism disposed above the guide tray, the gas injection mechanism configured to blow gas toward a top surface of the guide tray; the air injection mechanism comprises a plurality of nozzles, and the nozzles are arranged above the guide tray in an angle-adjustable manner.
7. A method of cleaning a wafer carrier, using the wafer processing apparatus of any one of claims 1 to 6, comprising the steps of:
loading the guide tray into the chamber and placing the guide tray above the wafer carrier;
and opening the gas source supply device to introduce gas into the blowing channel, wherein the gas at the gas outlet of the blowing channel is blown to the bottom surface of the guide tray and flows towards the edge of the bearing surface through the gas flow gap.
8. A method of cleaning a wafer carrier as claimed in claim 7, wherein the method of loading the guide tray into the chamber and placing the guide tray above the wafer carrier is:
the shape of the guide tray is matched with that of the wafer, and the guide tray is conveyed into the cavity by the wafer conveying disc.
9. The method as claimed in claim 7, wherein the pressure of the air flow from the air supply device into the air channel is controlled so that the air from the air outlet of the air channel can lift the tray to form the air flow gap.
10. A method of cleaning a wafer carrier as claimed in claim 9, wherein the size of the air flow gap is adjusted by:
adjusting the pressure of the air flow which is introduced into the air blowing channel by the air source providing device, and/or adjusting the self weight of the guide tray;
the step of loading the guide tray into the chamber and placing the guide tray above the wafer carrier further comprises the following steps: and starting the air injection mechanism, and injecting air to the top surface of the guide tray through the air injection mechanism.
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| CN201910931796.5A CN112582295A (en) | 2019-09-29 | 2019-09-29 | Wafer processing equipment and cleaning method of wafer carrier |
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| CN201910931796.5A CN112582295A (en) | 2019-09-29 | 2019-09-29 | Wafer processing equipment and cleaning method of wafer carrier |
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| CN112582295A true CN112582295A (en) | 2021-03-30 |
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| CN113492139A (en) * | 2021-07-01 | 2021-10-12 | 山东天岳先进科技股份有限公司 | Processing method and device for improving cleanliness of seed crystal |
| CN113529171A (en) * | 2021-07-01 | 2021-10-22 | 山东天岳先进科技股份有限公司 | Seed crystal with high surface cleanliness and cleaning method thereof |
| CN114899139A (en) * | 2022-07-11 | 2022-08-12 | 沈阳芯达科技有限公司 | Wafer positioning and clamping assembly |
| WO2022242594A1 (en) * | 2021-05-21 | 2022-11-24 | 北京北方华创微电子装备有限公司 | Carrier apparatus in semiconductor processing device and semiconductor processing device |
| WO2023283983A1 (en) * | 2021-07-13 | 2023-01-19 | 长鑫存储技术有限公司 | Control method and control system for deposition device |
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| WO2022242594A1 (en) * | 2021-05-21 | 2022-11-24 | 北京北方华创微电子装备有限公司 | Carrier apparatus in semiconductor processing device and semiconductor processing device |
| TWI805367B (en) * | 2021-05-21 | 2023-06-11 | 大陸商北京北方華創微電子裝備有限公司 | Bearing device of semiconductor process equipment and semiconductor process equipment |
| CN113492139A (en) * | 2021-07-01 | 2021-10-12 | 山东天岳先进科技股份有限公司 | Processing method and device for improving cleanliness of seed crystal |
| CN113529171A (en) * | 2021-07-01 | 2021-10-22 | 山东天岳先进科技股份有限公司 | Seed crystal with high surface cleanliness and cleaning method thereof |
| CN113492139B (en) * | 2021-07-01 | 2022-07-08 | 山东天岳先进科技股份有限公司 | Processing method and device for improving cleanliness of seed crystal |
| CN113529171B (en) * | 2021-07-01 | 2022-08-02 | 山东天岳先进科技股份有限公司 | Seed crystal with high surface cleanliness and cleaning method thereof |
| WO2023283983A1 (en) * | 2021-07-13 | 2023-01-19 | 长鑫存储技术有限公司 | Control method and control system for deposition device |
| CN114899139A (en) * | 2022-07-11 | 2022-08-12 | 沈阳芯达科技有限公司 | Wafer positioning and clamping assembly |
| CN114899139B (en) * | 2022-07-11 | 2022-09-23 | 沈阳芯达科技有限公司 | Wafer positioning and clamping assembly |
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