CN107851572B - Substrate processing apparatus, substrate processing method, and storage medium - Google Patents

Substrate processing apparatus, substrate processing method, and storage medium Download PDF

Info

Publication number
CN107851572B
CN107851572B CN201680044518.2A CN201680044518A CN107851572B CN 107851572 B CN107851572 B CN 107851572B CN 201680044518 A CN201680044518 A CN 201680044518A CN 107851572 B CN107851572 B CN 107851572B
Authority
CN
China
Prior art keywords
substrate
nozzle
guard
mist
height
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680044518.2A
Other languages
Chinese (zh)
Other versions
CN107851572A (en
Inventor
伊藤规宏
东岛治郎
绪方信博
大塚贵久
道木裕一
桥本佑介
相浦一博
后藤大辅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2016122690A external-priority patent/JP6740028B2/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN107851572A publication Critical patent/CN107851572A/en
Application granted granted Critical
Publication of CN107851572B publication Critical patent/CN107851572B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B17/00—Methods preventing fouling
    • B08B17/02—Preventing deposition of fouling or of dust
    • B08B17/025—Prevention of fouling with liquids by means of devices for containing or collecting said liquids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
    • B08B2203/0229—Suction chambers for aspirating the sprayed liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
    • B08B2203/0264—Splash guards
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/022—Cleaning travelling work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Abstract

The substrate processing apparatus includes: a fixed cup (51) which surrounds the substrate holding part (31), receives the processing liquid supplied to the substrate or the mist of the processing liquid, and is relatively immovable relative to the processing container; a mist guard (80); and a guard lifting mechanism (84) which lifts the mist guard. The mist guard is provided outside the fixed cup so as to surround the fixed cup, and blocks liquid that has flown over the fixed cup and splashed outward. The mist guard has: a cylindrical tube (81); and a protruding portion (82) that protrudes from the upper end of the cylindrical portion toward the fixed cup.

Description

Substrate processing apparatus, substrate processing method, and storage medium
Technical Field
The present invention relates to a technique for performing liquid processing on a substrate by supplying a processing liquid to a rotating substrate.
Background
The manufacturing process of a semiconductor device includes liquid processes such as a chemical solution cleaning process and a wet etching process. As a liquid processing apparatus for performing such liquid processing on a substrate such as a semiconductor wafer, there is known a liquid processing apparatus including: a holding unit configured to hold a substrate in a processing container called a chamber; a rotation mechanism for rotating a substrate such as a semiconductor wafer; a nozzle for supplying a processing liquid to the rotating substrate; and a cup for receiving the thrown-out treatment liquid.
Most of the processing liquid supplied to the substrate is collected by the cup, but a part of the atomized processing liquid is scattered to the outside of the cup. If the scattered processing liquid adheres to the inner wall of the chamber, an atmosphere derived from the processing liquid, particularly from the chemical solution, is formed around the substrate, and the chemical solution component in the atmosphere sometimes adheres to the substrate in the liquid processing to contaminate the substrate. In addition, if moisture adheres to the inner wall of the chamber, it is also considered that: the humidity around the substrate rises, which adversely affects the drying process of the substrate.
Therefore, it is desirable to prevent the processing liquid scattered from the substrate to the outside of the cup from adhering to the inner wall of the chamber as much as possible.
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 2008-53690
Disclosure of Invention
The invention provides a technology capable of preventing a processing liquid scattered from a substrate to the outside of a cup from adhering to the inner wall of a chamber.
According to an embodiment of the present invention, there is provided a substrate processing apparatus including: a substrate holding section for holding a substrate; at least 1 processing liquid nozzle, it squirts processing liquid to the base plate kept to the said base plate keeping part; a processing container for accommodating the substrate holding portion and the processing liquid nozzle; a fixed cup disposed around the substrate holding portion, the fixed cup receiving at least a processing liquid or a mist of the processing liquid supplied to the substrate and being relatively immovable with respect to the processing container; a mist guard provided outside the fixed cup so as to surround the fixed cup, the mist guard blocking liquid that flies outward over the fixed cup; and a lifting mechanism for lifting the mist guard to a 1 st protection height and a 2 nd protection height lower than the 1 st protection height, wherein the mist guard comprises: a cylindrical tube portion; and a protruding portion that protrudes from an upper portion of the cylindrical portion toward an inner side of the cylindrical portion and above the fixed cup.
According to another embodiment of the present invention, there is provided a substrate processing method using a substrate processing apparatus including: a substrate holding section for holding a substrate; at least 1 processing liquid nozzle, it squirts processing liquid to the upper surface of the base plate kept to the above-mentioned base plate keeping part; a processing container for accommodating the substrate holding portion and the processing liquid nozzle; a fixed cup disposed around the substrate holding portion, the fixed cup receiving a processing liquid or a mist of the processing liquid supplied to the substrate and being relatively immovable with respect to the processing container; a mist guard provided outside the fixed cup so as to surround the fixed cup, the mist guard blocking liquid that flies outward over the fixed cup; and a lifting mechanism for lifting the mist guard, wherein the mist guard comprises: a cylindrical tube portion; and a protruding portion protruding from an upper end of the cylindrical portion toward the fixed cup, the substrate processing method including: supplying a processing liquid from the nozzle to the substrate held by the substrate holding portion in a state where the mist guard is positioned at a 1 st guard height; and drying the substrate in a state where the mist guard is positioned at a 2 nd guard height lower than the 1 st guard height.
According to still another embodiment of the present invention, there is provided a storage medium storing a computer program for controlling an operation of a substrate processing apparatus to execute the above-described substrate processing method when the computer program is executed by a computer constituting a control device of the substrate processing apparatus.
According to the embodiment of the present invention, the mist guard having the protruding portion is provided, so that the processing liquid scattered over the cup can be prevented from adhering to the inner wall of the processing container.
Drawings
Fig. 1 is a plan view schematically showing a configuration of a substrate processing system according to an embodiment of the present invention.
Fig. 2 is a vertical sectional view showing the structure of the processing unit.
Fig. 3 is a plan view showing the structure of the processing unit.
Fig. 4 is a schematic view for explaining the movement of the mist guard and the nozzle arm.
Fig. 5 is an explanatory diagram for explaining the movement of the gas and the liquid droplets when the mist guard is at the high position and the intermediate position.
Fig. 6 is an explanatory diagram for explaining the movement of the gas and the liquid droplets when the mist guard is in the low position.
Fig. 7 is a schematic vertical sectional view illustrating a liquid passage opening provided in the mist guard.
Fig. 8 is a partial longitudinal sectional view illustrating a cleaning mechanism of the mist guard.
Fig. 9 is a plan view for explaining the movement of the nozzle arm.
Fig. 10 is a schematic vertical cross-sectional view illustrating a ventilation opening provided in the mist guard.
Fig. 11 is a schematic vertical cross-sectional view showing an embodiment of a modification including a fixed nozzle cover and a mist guard.
Fig. 12 is a schematic vertical cross-sectional view showing another modified embodiment provided with the mist guard.
Detailed Description
Fig. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment. Hereinafter, in order to clarify the positional relationship, an X axis, a Y axis, and a Z axis orthogonal to each other are defined, and the positive Z axis direction is set to be the vertically upward direction.
As shown in fig. 1, a substrate processing system 1 includes an input/output station 2 and a processing station 3. The input-output station 2 and the processing station 3 are arranged adjacently.
The input/output station 2 includes a carrier placement unit 11 and a transport unit 12. A plurality of carriers C accommodating a plurality of wafers W in a horizontal state are placed on the carrier placement unit 11.
The transport unit 12 is provided adjacent to the carrier placement unit 11, and includes a substrate transport device 13 and a transfer unit 14. The substrate transfer device 13 includes a substrate holding mechanism for holding the wafer W. The substrate transfer device 13 is movable in the horizontal direction and the vertical direction and rotatable about the vertical axis, and transfers the wafer W between the carrier C and the transfer portion 14 using the substrate holding mechanism.
The processing station 3 is disposed adjacent to the conveying section 12. The processing station 3 includes a conveying unit 15 and a plurality of processing units 16. The plurality of processing units 16 are arranged on both sides of the conveyance unit 15.
The conveying unit 15 is internally provided with a substrate conveying device 17. The substrate transfer device 17 includes a substrate holding mechanism for holding the wafer W. The substrate transfer device 17 is movable in the horizontal direction and the vertical direction and rotatable about the vertical axis, and transfers the wafer W between the transfer unit 14 and the processing unit 16 using the substrate holding mechanism.
The processing unit 16 performs a predetermined substrate process on the wafer W conveyed by the substrate conveyor 17.
The substrate processing system 1 further includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. A program for controlling various processes executed in the substrate processing system 1 is stored in the storage unit 19. The control unit 18 reads and executes a program stored in the storage unit 19, thereby controlling the operation of the substrate processing system 1.
The program may be recorded in a computer-readable storage medium, and may be installed from the storage medium to the storage unit 19 of the control device 4. As a storage medium that can be read by a computer, there are, for example, a Hard Disk (HD), a Flexible Disk (FD), an optical disk (CD), a magneto-optical disk (MO), a memory card, and the like.
In the substrate processing system 1 configured as described above, first, the substrate transport apparatus 13 of the input/output station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11, and places the taken-out wafer W on the delivery unit 14. The wafer W placed on the transfer unit 14 is taken out from the transfer unit 14 by the substrate transfer device 17 of the processing station 3 and is input to the processing unit 16.
After the wafers W input to the processing unit 16 are processed by the processing unit 16, the wafers W are output from the processing unit 16 by the substrate transfer device 17 and placed on the delivery unit 14. Then, the processed wafer W placed on the transfer portion 14 is returned to the carrier C of the carrier placement portion 11 by the substrate transport apparatus 13.
Next, the structure of the processing unit 16 will be described with reference to fig. 2. Fig. 2 is a diagram showing a schematic configuration of the processing unit 16. As shown in fig. 2, the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a processing fluid supply unit 40, and a cup 50. The processing fluid supply unit 40 supplies a processing fluid to the wafer W.
The chamber 20 houses the substrate holding mechanism 30, the processing fluid supply part 40, and the cup 50. An FFU (Fan Filter Unit) 21 is provided at the top of the chamber 20. FFU21 forms a downward flow within chamber 20. A rectifying plate 22 having a large number of holes (not shown) is provided directly below the outlet port of FFU21, and the distribution of the downflow gas flowing through the space in chamber 20 is optimized.
The substrate holding mechanism 30 includes a holding portion (substrate holding portion) 31, a rotating shaft 32, and a driving portion 33. The holding portion 31 can hold the wafer W horizontally. The drive unit 33 rotates the holding unit 31 via the rotary shaft 32, thereby rotating the wafer W held by the holding unit 31 about the vertical axis.
The holding portion 31 has: a disk-shaped base 31 a; a plurality of holding elements 31b provided on the base 31a and holding the wafer W; and lift pins 31c for supporting the lower surface of the wafer W separated from the holding elements 31b at the time of input/output of the wafer W to/from the processing unit 16. The holding element 31b may be constituted by a movable holding claw attached to the base 31a and capable of holding and releasing the peripheral edge portion of the wafer W, a holding pin fixed to the base 31a, or the like.
The lift pin 31c is fixed to an annular lift pin plate 31d accommodated in a recess formed in the upper surface of the base 31 a. The lift pin plate 31d is raised by a lift mechanism not shown, and can lift the wafer W. The wafer W can be transferred between the arm of the substrate transfer device 17 that has entered the chamber 20 and the raised lift pin plate 31 d.
The cup (cup assembly) 50 is discussed in detail below. The cup 50 has a function of collecting the processing liquid scattered from the wafer W and controlling the air flow around the wafer W. The cup 50 is disposed so as to surround the holding portion 31, and has a substantially rotational shape (in a geometrical sense). The cup 50 is composed of a plurality of components. The cup 50 has: a stationary (fixed) exhaust cup 51 located at the outermost side; and a drain cup 52 for guiding the processing liquid, which is located inside the exhaust cup 51.
Further, the 1 st and 2 nd spin cups 53 and 54 are attached to the base 31a of the holding portion 31 and rotate together with the base 31 a. The 1 st and 2 nd spin cups 53 and 54 receive the liquid supplied to the front surface (upper surface) of the wafer W and then scattered outward from the wafer W, and guide the liquid obliquely downward (radially outward and downward). The 2 nd spin cup 54 also has a function of guiding the liquid scattered outward from the wafer W after being supplied to the back surface (lower surface) of the wafer W. Further, the 1 st and 2 nd spin cups 53 and 54 also have a function of controlling the gas flow around the wafer W.
The drain cup 52 includes a drain cup body 521, a 1 st movable cup element 522 (1 st movable cup), and a 2 nd movable cup element 523 (2 nd movable cup). The drain cup body 521 includes: an outer peripheral tube 521a extending in a substantially vertical direction; the protruding portion 521 b; a bottom portion 521c, and an inner peripheral portion 521 d. The protruding portion 521b extends from the upper end of the outer peripheral tube portion 521a toward the wafer W. The two convex portions 521e and 521f extend upward from the bottom portion 521 c.
Liquid accumulation portions 522a, 522b, and 522c for receiving an acid liquid, an alkaline liquid, and an organic liquid are defined between the outer peripheral tube portion 521a and the convex portion 521e, between the convex portion 521e and the convex portion 521f, and between the convex portion 521f and the inner peripheral portion 521d, respectively. The liquid traps 522a, 522b, and 522c are connected to plant waste liquid systems for acidic liquid (DR1), alkaline liquid (DR2), and organic liquid (DR3) via liquid discharge lines 523a, 523b, and 523c connected to the liquid traps, respectively.
The 1 st movable cup element 522 and the 2 nd movable cup element 523 are fitted to the protruding portions 521e and 521f so as to be movable up and down, respectively. The 1 st movable cup element 522 and the 2 nd movable cup element 523 are lifted and lowered by a lifting mechanism not shown. By changing the positions of the 1 st movable cup element 522 and the 2 nd movable cup element 523, the processing liquid flown out from the wafer W and then guided to the 1 st rotary cup 53 and the 2 nd rotary cup 54 can be guided to the respective corresponding liquid accumulating portions (any of 522a, 522b, and 522 c).
The exhaust cup 51 has an outer peripheral tube portion 511, an extension portion 512, a bottom portion 513, and an inner peripheral portion 514. An exhaust passage 551 is formed between the surfaces of the exhaust cup 51 and the drain cup main body 521 facing each other. An exhaust port 552 is provided in the bottom 513 of the exhaust cup 51, and an exhaust duct (exhaust path) 553 is connected to the exhaust port 552. The exhaust duct 553 is connected to a plant exhaust duct (not shown) of a plant exhaust system of a reduced pressure atmosphere (C-EXH). A flow rate control valve 554 such as a butterfly valve or a regulator valve is interposed in the exhaust pipe 553. By adjusting the opening degree of the flow rate control valve 554, the flow rate of the gas sucked through the exhaust passage 551 can be adjusted. Further, a device for promoting exhaust such as an injector or an exhaust pump may be interposed in the exhaust pipe 553.
Next, the processing fluid supply unit 40 will be described. The processing fluid supply unit 40 has a plurality of nozzles for supplying a processing fluid (liquid or gas). As shown in fig. 3, the plurality of nozzles includes: SC1 nozzle 411 for ejecting SC1 liquid; an AS nozzle 412 that ejects two fluids including droplets of DIW (pure water) and nitrogen gas; a DHF nozzle 413 that ejects DHF (dilute hydrofluoric acid); a 1 st DIW nozzle 414 for spraying pure water (DIW); an IPA nozzle 415 that ejects warmed IPA (isopropyl alcohol); a 1 st nitrogen gas nozzle 416 for ejecting nitrogen gas downward in the vertical direction; a 2 nd nitrogen nozzle 417 for jetting nitrogen obliquely downward; an SC2 nozzle 418 for ejecting SC2 liquid; and a 2 nd DIW nozzle 419 to discharge pure water (DIW).
The AS nozzle 412 atomizes the DIW by merging the flows of the DIW and the nitrogen gas, and discharges the two fluids containing the atomized DIW and the nitrogen gas. By supplying only DIW without supplying nitrogen gas to the AS nozzle 412, only DIW without atomization can be ejected from the AS nozzle 412. The IPA nozzle 415 may also discharge a solvent other than DIW, which has compatibility with DIW, has higher volatility than DIW, and has lower surface tension than DIW.
The SC1 nozzle 411 and AS nozzle 412 are held by the 1 st nozzle arm 421. The DHF nozzle 413, the 1 st DIW nozzle 414, and the IPA nozzle 415 are held by the 2 nd nozzle arm 422. The 1 st nitrogen nozzle 416 and the 2 nd nitrogen nozzle 417 are held by the 3 rd nozzle arm 423. The 1 st nozzle arm 421, the 2 nd nozzle arm 422, and the 3 rd nozzle arm 423 are rotatable about vertical axes by arm drive mechanisms 431, 432, and 433 provided respectively, and are vertically movable. Each of the arm driving mechanisms 431, 432, 433 may include a rotary motor (not shown) as a rotary driving mechanism for realizing the above-described rotary function, and a cylinder (not shown) as an elevating mechanism (arm elevating mechanism) for realizing the above-described elevating function.
By rotating the 1 st nozzle arm 421 by the arm drive mechanism 431, the SC1 nozzle 411 and the AS nozzle 412 can be positioned at any position between the standby position 441 outside the cup 50 and the position directly above the center Wc of the wafer W (see arrow M1 in fig. 3). By rotating the 2 nd nozzle arm 422 by the arm driving mechanism 432, the DHF nozzle 413, the 1 st DIW nozzle 414, and the IPA nozzle 415 can be positioned at any position between the standby position 442 outside the cup 50 and the position directly above the center Wc of the wafer W (see arrow M2 in fig. 3). By rotating the 3 rd nozzle arm 423 by the arm driving mechanism 433, the 1 st nitrogen nozzle 416 and the 2 nd nitrogen nozzle 417 can be positioned at any position between the initial standby position 443 outside the cup 50 and the position directly above the center Wc of the wafer W (see arrow M3 in fig. 3).
For convenience of description, the position directly above the standby place (441, 442, 443) is also referred to as the start position of the corresponding nozzle (411 to 417), and the position of the corresponding nozzle arm (421, 422, 423) when the corresponding nozzle (411 to 417) is located at the start position is also referred to as the start position of the nozzle arm (421, 422, 423).
The nozzle arms (421, 422, 423) can be moved between the high position HN (1 st (3 rd) arm height) and the low position LN (2 nd (4 th) arm height) by the arm elevating mechanisms provided in the arm driving mechanisms 431, 432, 433 (see fig. 4), and along with this, the nozzles mounted on the nozzle arms can be moved between an approaching position close to the wafer W and a spaced position away from the wafer W with respect to the approaching position.
The SC2 nozzle 418 and the 2d iw nozzle 419 are stationary fixed nozzles that are fixed to the bottom plate 96, discussed later. The SC2 nozzle 418 and the 2d iw nozzle 419 discharge the liquid at a predetermined flow rate, and the liquid discharged from these nozzles 418 and 419 is provided so as to fly in a parabolic manner and fall toward the center Wc of the wafer W.
The cylinder 450 extends in the vertical direction inside the rotating shaft 32. The cylinder 450 is provided so as not to rotate even if the rotating shaft 32 rotates. Inside the cylindrical body 450, 1 or more processing fluid supply paths 451 (only 1 is shown in fig. 2) extend in the up-down direction. The upper end opening of the processing fluid supply path 451 is a lower surface nozzle 452 for supplying the processing fluid. DIW as a rinse liquid or a purge liquid, and nitrogen as a dry gas or a purge gas can be supplied from the lower surface nozzle 452 to the back surface (lower surface) of the wafer W. In the following description, the lower surface nozzle 452 is not mentioned.
Any one of the above-described processing fluids is supplied from a corresponding processing fluid supply source (for example, any one of various supply units (not shown) such as a chemical solution supply tank for storing SC1, DHF, and the like, and a supply source of pure water, nitrogen gas, and the like supplied as power for a plant) to each of the nozzles (411 to 419) via a corresponding processing fluid supply mechanism (not shown). The processing fluid supply mechanism can be composed of a supply line for connecting each nozzle (411-419) with a corresponding processing fluid supply source, an opening and closing valve interposed in the supply line, a flow control device such as a flow control valve, and the like.
The processing liquid supplied from the processing liquid nozzle (the SC1 nozzle 411, the AS nozzle 412, the DHF nozzle 413, the 1 st DIW nozzle 414, the SC2 nozzle 418, the 2 nd DIW nozzle 419, and the like) to the rotating wafer W is thrown off from the wafer by a centrifugal force, and is scattered AS fine droplets due to collision between the processing liquid and the surface of the wafer W (collision between liquids when the liquids are supplied from two or more nozzles to the surface of the wafer W at the same time). If the scattered droplets adhere to the inner wall surface of the chamber 20 or the device in the chamber 20 constitutes a component, the problem as described in the background art may occur.
In order to prevent or at least greatly suppress the scattered processing liquid from reaching the inner wall surface of the chamber 20, a mist guard 80 is provided on the outer side of the cup 50.
The mist guard 80 has: an outer peripheral cylindrical portion (cylindrical portion) 81; and an extension portion 82 extending from an upper end portion of the outer peripheral tube portion 81 toward the inside (in the radial direction) of the outer peripheral tube portion 81 and extending upward of the exhaust cup 51. A protrusion 83 protruding downward is provided on the lower surface of the distal end portion of the protruding portion 82.
The mist guard 80 is movable up and down by an elevating mechanism 84 (guard elevating mechanism) (see fig. 3) to be able to be positioned at three different height positions, i.e., a high position HG (1 st guard height) (indicated by a one-dot chain line in fig. 2), a low position LG (2 nd guard height) (indicated by a solid line in fig. 2), and an intermediate position MG (3 rd guard height) (indicated by a two-dot chain line in fig. 2) (see also fig. 4). The lifting mechanism 84 can be constituted by, for example, a three-position cylinder 84a as schematically shown in fig. 3. The mist guard 80 has a flange portion 85 extending outward from the outer circumferential tube portion 81, and the flange portion 85 is connected to the rod 84b of the cylinder 84a located therebelow, and the mist guard 80 moves up and down as the rod 84b advances and retreats. The lifting mechanism 84 may be a linear motor or a linear mechanism driven by a rotary motor. In this case, the mist guard 80 can be fixed at any height position.
The mist guard 80 is shown in a high position HG in fig. 5. When the mist guard 80 is located at the high position HG, it is located at a position for most effectively preventing the processing liquid (indicated by a dotted arrow in fig. 5) supplied from the nozzles (SC1 nozzle 411, AS nozzle 412, DHF nozzle 413, 1 st DIW nozzle 414, SC2 nozzle 418, 2 nd DIW nozzle 419, and the like) to the rotating wafer W from scattering from the wafer W from reaching the inner wall of the chamber 20. The desired height of the high position HG of the mist guard 80 is determined by experiments, because it varies depending on the rotation speed of the wafer W and the conditions (flow rate, etc.) for supplying the processing liquid to the surface of the wafer W. As an example, the uppermost portion of the mist guard 80 at the high position HG has a height 60mm higher than that of the surface of the wafer W. When the mist guard 80 is at the high position HG, as shown in fig. 4a, the ejection port (reference numeral NP in fig. 4) of the nozzle (corresponding to any of the nozzles 411 to 417; reference numeral N in fig. 4) at the aforementioned close position is located at a position lower than the inner peripheral end of the protruding portion 82 of the mist guard 80, and the nozzle arm (corresponding to any of the nozzle arms 421, 422, 423; reference numeral a in fig. 4) corresponding to the nozzle N is located at a position higher than the protruding portion 82. Since the appropriate height of the high position HG of the mist guard 80 varies depending on the rotation speed of the wafer W and the conditions (flow rate, etc.) for supplying the processing liquid to the surface of the wafer W, it is preferable to determine the height of the high position HG based on these conditions.
The mist guard 80 is shown in a low position LG in fig. 6. The low position LG is a lower limit position where the mist guard 80 can be located when the protrusion 83 of the extension 82 of the mist guard 80 is in contact with the upper surface of the extension 512 of the exhaust cup 51. That is, the space between the surfaces of the mist guard 80 and the exhaust cup 51 facing each other is isolated from the space above the wafer W in the vicinity of the wafer W. When the mist guard 80 is at the low position LG, the flow of the gas (indicated by solid arrows in fig. 6) from the upper space of the wafer W toward the exhaust port (slit-shaped opening 97 to be discussed later) at the peripheral edge portion of the chamber 20 is not obstructed by the mist guard 80.
The intermediate position MG of the mist guard 80 is at an intermediate height between the aforementioned high position HG and low position LG. The mist guard 80 at the intermediate position MG is shown in broken lines in fig. 5. When the mist guard 80 is located at the intermediate position MG, the projecting portion 82 of the mist guard 80 is spaced upward from the projecting portion 512 of the exhaust cup 51 (not to the extent that it is located at the high position HG), and the processing liquid scattered from the wafer W can be suppressed from reaching the inner wall of the chamber 20 to some extent. When the mist guard 80 is located at the intermediate position MG, the discharge port NP of the nozzle N (located at the above-described spaced position) is located higher than the inner peripheral end of the projecting portion 82 of the mist guard 80 as shown in fig. 4b, and the nozzle N can move freely between the above-described standby position and the above-described position above the surface of the wafer W over the mist guard 80 without interfering with the mist guard 80.
As described above, since each of the arm drive mechanisms (431, 432, 433) includes the elevating mechanism, when the mist guard 80 is located at the intermediate position MG, the nozzle arms (421, 422, 423) are raised to the high position HN, and the corresponding nozzles can pass above the mist guard 80 with sufficient clearance (without worrying about interference). That is, by providing the elevating mechanism in the arm driving mechanism, the intermediate position MG of the mist guard 80 can be set relatively high, and the processing liquid supplied to the wafer W can be prevented from scattering over the mist guard 80 when the mist guard 80 is located at the intermediate position MG. Further, the mist guard 80 can be positioned at the high position HG, and the ejection port of the nozzle when the processing liquid is supplied from the nozzle to the wafer W can be sufficiently close to the surface of the wafer W, so that the splashing of the processing liquid on the surface of the wafer W can be reduced.
Further, it is preferable that the nozzle arms (421, 422, 423) are raised to the high position HN when the mist guard 80 is positioned at the intermediate position MG, and the nozzle arms may be continuously maintained at the low position LN as described above.
As shown in fig. 7, the liquid passage opening 86 is formed in the outer peripheral tube portion 81 of the mist guard 80 at a position where the flight path of the liquid discharged from the SC2 nozzle 418 and the 2 nd DIW nozzle 419 passes when the mist guard 80 is at the high position.
As shown in fig. 2, a cylindrical shield bag 90 (mist guard accommodating portion) that accommodates the outer circumferential tube portion 81 of the mist guard 80 is provided outside the outer circumferential tube portion 511 of the exhaust cup 51. The protection bag 90 is defined by the outer peripheral surface of the outer peripheral tube portion 511 of the exhaust cup 51, a cylindrical vertical wall (vertical wall) 91 facing the outer peripheral tube portion 511, and a bottom wall 92. A plurality of discharge ports 93 (only 1 is shown in fig. 2) are formed in the bottom wall 92 at equal intervals in the circumferential direction. The discharge port 93 is connected to a discharge pipe 94 (discharge line).
A bottom plate 96 that partitions the lower limit of the processing space formed in the chamber 20 is provided outward in the substantially horizontal direction from the vertical wall 91 constituting the shield bag 90. The bottom plate 96 surrounds the entire circumference of the mist guard 80. That is, the bottom plate 96 is provided with an opening (corresponding to the vertical wall 91) having a diameter slightly larger than the outer shape of the outer peripheral tube portion 81 of the mist guard 80, and the mist guard 80 and the cup 50 are accommodated in the opening. The floor 96 extends from the opening until reaching the side wall 20a of the chamber 20.
A part of the bottom plate 96 is located at the front end of the side wall 20a of the chamber 20, and thus a slit-shaped opening 97 (gap) is formed between the outer end 96a of the bottom plate 96 and the side wall 20a of the chamber 20. An exhaust space 98 for exhausting an atmosphere in a space (processing space) inside the chamber 20 is formed below the bottom plate 96. The exhaust space 98 is defined by the bottom plate 96, wall bodies such as the side wall 20a and the bottom wall 20b of the chamber 20, and the vertical wall 91.
As shown in fig. 3, the chamber 20 has 4 side walls 20a, and 1 slit-shaped opening 97 is provided along each of 3 of them. These 3 slit-shaped openings 97 are connected to the common 1 exhaust space 98. Since the input/output port 24 with the shutter 25 for inputting/outputting the wafer W into/from the chamber 20 is provided in the remaining 1 side wall 20a, the slit-shaped opening 97 is not provided here.
As shown in fig. 2, an exhaust port 99 is provided in the bottom wall 20b of the chamber 20 facing the exhaust space 98. An exhaust pipe 100 (exhaust line) is connected to the exhaust port 99. A discharge pipe 94 is joined to the exhaust pipe 100. On the downstream side of the junction, a mist trap (gas-liquid separation section) 101 and a flow rate control valve 102 such as a butterfly valve or an adjustment valve are interposed in the exhaust pipe 100. The downstream end of the exhaust pipe 100 is connected to a pipe (not shown) of a plant exhaust system having a reduced pressure atmosphere. By adjusting the opening degree of the flow rate control valve 102, the degree of decompression in the exhaust space 98 and the shield bag 90 can be adjusted, and as a result, the flow rate of the gas introduced into the exhaust space 98 from the space in the chamber 20 and the flow rate of the gas introduced into the shield bag 90 from the space above the wafer W can be adjusted.
The upper surface of the bottom plate 96 is gently inclined in such a manner that the height becomes lower as approaching the side wall 20a of the chamber 20. The upper surface of the bottom plate 96 is smooth and flat. As described above, the upper surface of the bottom plate 96 is substantially free of irregularities except for the portion where the SC2 nozzle 418 and the 2d iw nozzle 419 are provided and the portion where necessary sensors and accessories are provided, and the gas can smoothly flow toward the slit-shaped opening 97 in the vicinity of the bottom plate 96. When the chamber 20 is cleaned during maintenance, the cleaning liquid smoothly flows into the exhaust space 98 through the slit-shaped opening 97.
As shown in fig. 5, the lower end of the outer peripheral tube part 81 of the mist guard 80 located at the high position is located slightly above the upper end of the protection bag 90. According to the experiment of the inventors, when the mist guard 80 is located at the high position HG, the droplets of the treatment liquid hardly collide with the vicinity of the lower end of the outer circumferential tube part 81, and most of the droplets collide with the relatively high position of the mist guard 80. Therefore, there is little advantage that the lower end of the outer cylindrical portion 81 is lower than the upper end of the protection bag 90. Rather, by making the lower end of the outer peripheral cylinder portion 81 higher than the upper end of the protection bag 90, the following advantages are obtained: the atmosphere (gas, mist, etc.) in the space between the extension portion 82 of the mist guard 80 and the extension portion 512 of the exhaust cup 51 smoothly flows into the slit-shaped opening 97 or the shield pocket 90, and the atmosphere derived from the chemical solution or the high-humidity atmosphere (including mist) can be more reliably prevented from staying in the space above the wafer W.
As shown in fig. 8, a plurality of, for example, 4 cleaning liquid nozzles 110 (mist guard cleaning mechanism) for spraying a cleaning liquid, for example, DIW, for cleaning the inner surface of the mist guard 80 are arranged at equal intervals along the circumferential direction of the extension portion 512 on the upper surface of the extension portion 512 of the exhaust cup 51. One of the 4 cleaning fluid nozzles 110 is shown in fig. 8.
When the mist guard 80 is located at the low position LG that is the lower limit position, the cleaning liquid supplied from the cleaning liquid supply portion is ejected from the cleaning liquid nozzle 110 toward the lower surface of the protruding portion 82 of the mist guard 80. The lower surface of the protruding portion 82 is inclined so as to become higher as going to the inside in the radial direction of the mist guard 80, and therefore, the sprayed cleaning liquid advances obliquely upward along the lower surface of the protruding portion 82. At this time, the projection 83 contacts the upper surface of the extension 512 of the exhaust cup 51, and therefore, the cleaning liquid does not advance forward than the projection 83. Therefore, the cleaning liquid sprayed from the cleaning liquid nozzle 110 fills the space between the exhaust cup 51 and the surface of the mist guard 80 facing each other. When the ejection of the cleaning liquid from the cleaning liquid nozzle 110 is stopped, the upper surface 516 of the projecting portion 512 is inclined so as to become higher as it goes to the inside in the radial direction, and therefore the cleaning liquid flows down toward the shield bag 90. Due to the flow of the cleaning liquid described above, the surfaces of the exhaust cup 51 and the mist guard 80 facing each other are cleaned. The cleaning liquid is discharged from the shield bag 90 through the discharge pipe 94, flows into the mist trap 101, and flows out to a factory waste liquid system through a waste liquid pipe connected to the mist trap 101.
In addition to the cleaning liquid nozzle 110, a cleaning liquid nozzle for automatically cleaning the inside of the cup 50 and members in the vicinity thereof may be provided, but these are not mentioned in the present specification.
Next, an example of the operation sequence of the processing unit 16 will be described. The following operation sequence is automatically executed by the process recipe and the control program stored in the storage unit 19 of the control device 4 under the control of the control device 4 (control unit).
First, the arm of the substrate transfer device 17 inputs the wafer W into the chamber 20 (processing container) through the input/output port 24, and the wafer W is held by the holding portion 31 of the substrate holding mechanism 30. After the arm of the substrate transport apparatus 17 is withdrawn from the chamber, the shutter 25 is closed. The mist guard 80 is in a low position when the wafer W is input. Then, a series of processes are performed on the wafer W. Here, a case will be described in which the DHF cleaning step, the DIW rinsing step, the SC1 cleaning step, the DIW rinsing step, the IPA replacement step, and the drying step are sequentially performed on the wafer W.
[ DHF cleaning Process ]
First, the 2 nd nozzle arm 422 is rotated (see arrow M2 in fig. 3), and the DHF nozzle 413, the 1 st DIW nozzle 414, and the IPA nozzle 415 are positioned directly above the center portion of the wafer W over the mist guard 80 (see fig. 4 c) positioned at the low position LG (see fig. 9 a). Next, the mist guard 80 is raised to be located at the high position HG (see fig. 4a and 5). Next, the wafer W starts to rotate. The rotation of the wafer W continues until the series of processes on the wafer W is finished. DHF is supplied from the DHF nozzle 413 to the center of the rotating wafer W. The DHF flows toward the peripheral edge of the wafer W on the front surface of the wafer W by the centrifugal force, the entire surface of the wafer W is covered with a liquid film of DHF, and the front surface of the wafer W is treated with DHF.
Most of the processing liquid (DHF in this case) scattered from the wafer W flows obliquely downward through the space between the 1 st and 2 nd spin cups 53 and 54. Then, the processing liquid flows into any one of the liquid passages 525a, 525b, and 525c (any one with an open inlet) according to the positions of the 1 st movable cup element 522 and the 2 nd movable cup element 523, which are predetermined based on the kind (acidic, alkaline, and organic) of the processing liquid, then flows into any one of the liquid accumulating portions 522a, 522b, and 522c, and is discarded to the plant waste liquid system via any one of the liquid discharge lines 523a, 523b, and 523 c. Note that the flow of the processing liquid described above is common to all the steps of supplying the processing liquid to the front surface of the wafer W, and therefore, a repeated explanation of the subsequent steps will be omitted.
A part of the processing liquid scattered from the wafer W passes over the extension portion 512 of the exhaust cup 51 and is directed toward the side wall 20a of the chamber 20. Most of the droplets of the treatment liquid collide with the inner surface of the mist guard 80 located at the high position and are captured. Therefore, the adhesion of the droplets of the processing liquid to the side wall 20a of the chamber 20 is prevented or minimized. The liquid captured to the mist guard 80 adheres to the inner surface of the mist guard 80 or flows downward by gravity on the inner surface of the mist guard 80.
Even if the flow rate is slow, clean air is blown downward from the FFU21 into the processing space, which is the internal space of the chamber 20, when the supply of the first processing liquid (DHF in this case) to the wafer W is started (normally, when the substrate processing system 1 is in normal operation). The flow of the clean air is rectified by the rectifying plate 22 and directed toward the wafer W.
Even if the process is slow, when the supply of the first process liquid to the wafer W is started, the atmosphere in the space above the wafer W near the wafer W is sucked from the gap between the tip of the protrusion 512 of the exhaust cup 51 and the tip of the protrusion 521b of the drain cup 52 by exhausting the gas from the exhaust passage 551 through the exhaust duct 553 (see the solid arrow in fig. 5). The flow rate of the exhaust gas through the exhaust pipe 553 is maintained constant from the input of the wafer W into the chamber 20 to the output thereof. Therefore, the clean air supplied from FFU21 to the space above wafer W is supplied, and the atmosphere in the space above wafer W is introduced into exhaust passage 551. Thereby, the atmosphere in the space above the wafer W near the wafer W is maintained clean.
In the present embodiment, the liquid passages 525a, 525b, 525c are not evacuated (sucked). That is, the gas flowing into the cup 50 from the space above the wafer W near the wafer W flows into all the exhaust passages 551 without flowing into the liquid passages 525a, 525b, and 525 c. It is impossible to make the sectional shapes of the liquid passages 525a, 525b, 525c the same as each other and to make the flow path resistances of the liquid passages 525a, 525b, 525c different from each other. When the liquid passages 525a, 525b, and 525c are sucked, the flow rate of the gas flowing into the cup 50 from the space above the wafer W in the vicinity of the wafer W is different depending on the opened liquid passages due to the difference in the flow path resistance. In the present embodiment, such a problem does not occur, and the flow of the gas in the space above the wafer W in the vicinity of the wafer W is maintained constant regardless of the type of the processing liquid used for the processing. This contributes to an improvement in the uniformity of the treatment.
Even if slow, when the supply of the first processing liquid to the wafer W is started, the internal space of the shield bag 90 and the exhaust space 98 are sucked (exhausted) via the exhaust pipe 94 and the exhaust pipe 100. The exhaust gas is maintained from the input of the wafer W into the chamber 20 to the output thereof. By this exhaust, the atmosphere (gas, mist, etc.) existing in the space between the mist guard 80 above the bottom plate 96 and the side wall 20a of the chamber 20 and the space between the protruding portion 82 of the mist guard 80 and the protruding portion 512 of the exhaust cup 51 is sucked into the shield bag 90 or the exhaust space 98 through the slit-shaped opening 97 (see solid arrows in fig. 5 and 6). This can prevent an atmosphere having a polluting property or a high humidity from staying in the space.
The droplets flowing downward by gravity on the inner surface of the mist guard 80 drop into the guard bag 90, flow through the discharge pipe 94 and the exhaust pipe 100, and are discharged from the waste liquid 103 of the mist trap 101 to a factory waste liquid system, not shown.
[ DIW Wash Process (1 st) ]
When the DHF cleaning process is completed, the mist guard 80 is maintained at the high position HG, the ejection of DIW from the 1DIW nozzle 414 is started as it is, and the ejection of DHF from the DHF nozzle 413 is stopped immediately after the start. DHF and reaction products remaining on the wafer W are washed by the DIW.
[ SC1 cleaning Process ]
When the DIW flushing process is switched to the SC1 cleaning process, first, the nozzle arm is replaced (nozzle replacement operation) (see fig. 9 (a) to (c)). The mist guard 80 is lowered to be located at the intermediate position MG and the nozzle arms 421 and 422 are raised to be located at the high position HN while maintaining the state where the DIW is continuously ejected from the 1 st DIW nozzle 414 (the ejection flow rate may be reduced in a range where the DIW liquid film on the front surface of the wafer W is not interrupted) (see fig. 4 (b)). Next, the 1 st nozzle arm 421 is rotated so that the AS nozzle 412 is positioned directly above the center of the wafer W. At this time, the retraction rotation of the 2 nd nozzle arm 422, that is, the movement of the 2 nd nozzle arm 422 toward the home position is started while the SC1 nozzle 411 continues to discharge the DIW from the 1 st DIW nozzle 414 of the 2 nd nozzle arm 422 immediately before the nozzle at the tip end of the 1 st nozzle arm 421 and the nozzle at the tip end of the 2 nd nozzle arm 422 reach the center of the wafer W so as not to collide with each other (see fig. 9 (b)). At a slightly earlier point in time when the AS nozzle 412 reaches directly above the center portion of the wafer W, the discharge of DIW is started from the AS nozzle 412. At this time, the DIW without atomization is discharged from the AS nozzle 412 without using the two-fluid generating function of the AS nozzle 412 (i.e., without supplying nitrogen gas to the AS nozzle 412). After the supply of DIW from the AS nozzle 412 to the center portion of the wafer W is started, the discharge of DIW from the 1 st DIW nozzle 414 is stopped. When the AS nozzle 412 is positioned directly above the center of the wafer W and the 1 st DIW nozzle 414 is returned to the home position (see fig. 9 c), the mist guard 80 is raised to be positioned at the high position HG and the 2 nd nozzle arm 422 is positioned at the low position LN (see fig. 4 a).
By repeating the period of supplying the DIW from the AS nozzle 412 to the vicinity of the central portion of the wafer W and the period of supplying the DIW from the 1 st DIW nozzle 414 to the vicinity of the central portion of the wafer W in this manner, it is possible to prevent the liquid film of the DIW from being locally disappeared from the surface of the wafer W and a part of the surface of the wafer W from being exposed to the atmosphere (watermark, which causes generation of particles). AS long AS this effect can be achieved, the timing of starting the discharge of the DIW from the AS nozzle 412 and the timing of stopping the discharge of the DIW from the 1 st DIW nozzle 414 are arbitrary.
Further, when the mist guard 80 is located at the intermediate position MG, the liquid droplet scattering blocking function of the mist guard 80 is reduced as compared with when located at the high position HG. Therefore, in order to reduce the amount of droplets scattered from the wafer W, the height of the droplets scattered, and the like, it is preferable to take measures such AS reducing the rotation speed of the wafer W, reducing the DIW discharge flow rate from the AS nozzle 412 and the 1 st DIW nozzle 414 (within a range where the surface of the wafer W is not exposed), and shortening the time for which the AS nozzle 412 and the 1 st DIW nozzle 414 simultaneously discharge the DIW (when the liquid discharged from each nozzle collides with the wafer W, the liquid is likely to be splashed).
Next, the supply of SC1 from the SC1 nozzle 411 to the center portion of the wafer W is started, and the discharge of DIW from the AS nozzle 412 is stopped immediately after the start. SC1 cleaning is performed on wafer W by supplying SC1 to wafer W for a predetermined time. At this time, the droplets of the processing liquid scattered from the wafer W are captured by the mist guard 80. The evacuation operation in the SC1 cleaning step is the same as that in the DHF cleaning step, and therefore, a redundant description thereof is omitted.
[ DIW Wash Process (2 nd) ]
When the SC1 cleaning process is completed, the mist guard 80 is maintained at the high position HG, and the discharge of DIW from the AS nozzle 412 is started, and immediately after the start, the discharge of SC1 from the SC1 nozzle 411 is stopped. SC1 and reaction products remaining on wafer W are washed by the DIW.
[ IPA replacement step ]
When switching from the DIW rinsing process (2 nd time) to the IPA replacement process, first, the nozzle arm is replaced. The mist guard 80 may be lowered to be located at the intermediate position MG while keeping the DIW being continuously ejected from the AS nozzle 412 (the ejection flow rate may be reduced in a range where the DIW liquid film on the surface of the wafer W is not interrupted), and the nozzle arms 421 and 422 may be raised to be located at the high position HN (see fig. 4 (b)). Next, the 2 nd nozzle arm 422 is rotated to position the 1 st DIW nozzle 414 directly above the center of the wafer W. At this time, the retracting rotation of the 1 st nozzle arm 421, that is, the movement of the 1 st nozzle arm 421 toward the home position is started from immediately before the 1 st DIW nozzle 414 reaches the center of the wafer W until the DIW is continuously discharged from the AS nozzle 412 of the 1 st nozzle arm 421 so that the nozzle at the tip end of the 1 st nozzle arm 421 and the nozzle at the tip end of the 2 nd nozzle arm 422 do not collide with each other (see fig. 9 (d)). At a point slightly before the 1 st DIW nozzle 414 reaches a position directly above the center of the wafer W, the 1 st DIW nozzle 414 starts discharging the DIW. At this time, after the supply of DIW from the 1 st DIW nozzle 414 to the center portion of the wafer W is started, the discharge of DIW from the AS nozzle 412 is stopped.
Next, in the state of fig. 9 (d), the IPA ejection is started from the IPA nozzle 415, and the DIW ejection from the 1 st DIW nozzle 414 is stopped immediately after the start. Simultaneously with the start of the ejection of IPA, or later, the mist guard 80 is lowered to be located at the low position LG. The DIW on the front surface of the wafer W is replaced with the supplied IPA, and the front surface of the wafer W is covered with the IPA liquid film.
[ drying Process ]
After the 1 st nozzle arm 421 returns to the home position, the 3 rd nozzle arm 423 is rotated so that the 1 st nitrogen nozzle 416 is positioned directly above the center of the wafer W. As soon as the 1 st nitrogen gas nozzle 416 approaches the center of the wafer W directly above, the IPA ejection is continued from the IPA nozzle 415, and the 2 nd nozzle arm 422 is moved toward the home position (toward the peripheral edge of the wafer W). When the 1 st nitrogen gas nozzle 416 is positioned directly above the center portion of the wafer W, the nitrogen gas is ejected from the 1 st nitrogen gas nozzle 416. Next, the nitrogen gas ejection from the 2 nd nitrogen gas nozzle 417 is started, and the 3 rd nozzle arm 423 is started to move toward the home position (toward the peripheral edge of the wafer W) (see fig. 9 (f)).
The rotation movements of the 2 nd nozzle arm 422 and the 3 rd nozzle arm 423 are controlled so that the collision position between IPA ejected from the IPA nozzle 415 and the surface of the wafer W is maintained at a position radially outward of the collision position between nitrogen ejected from the 2 nd nitrogen nozzle 417 and the surface of the wafer W. Thus, the nitrogen gas discharged from the 2 nd nitrogen gas nozzle 417 pushes the IPA liquid film away in the wafer peripheral direction, and the circular dry region formed on the front surface of the wafer W gradually spreads from the center portion toward the peripheral portion. After the IPA nozzle 415 passes the peripheral edge of the wafer W, the entire surface of the wafer W is dried at a time point when the 2 nd nitrogen nozzle 417 passes the peripheral edge of the wafer W. Through the above steps, the drying process is completed. The nozzle arms 422 and 423 return to their respective home positions and stand by at the home positions.
In this drying process, the mist guard 80 is located at the low position LG. Therefore, the flow of the gas from the space above the wafer W toward the slit-shaped opening 97 is not obstructed by the mist guard 80. This prevents or reduces mist or vapor of DIW scattered in the previous step from staying in the space above the wafer W. Therefore, the space above the wafer W can be maintained at a low humidity, and the drying efficiency can be improved. Even if IPA is scattered and adheres to the side wall 20a of the chamber 20, IPA having high volatility evaporates in a short time and is exhausted to the outside of the chamber 20, and therefore, the atmosphere in the chamber 20 is not adversely affected.
During the drying process, the mist guard 80 located at the low position LG is cleaned by the procedure described above with reference to fig. 8, and the chemical solution component adhering to the surface (the surface on the wafer W side) of the mist guard 80 is removed.
After the drying process is completed, the processed wafer W is discharged to the outside of the chamber 20 in the reverse order of the input.
The above-described operation sequence is not included, but the operation sequence may include the following steps: as shown in fig. 7, in a state where the mist guard 80 is at the high position HG, SC2 liquid is supplied from the SC2 nozzle 418 to the center portion of the wafer W to perform SC2 cleaning, and then DIW is supplied from the 2 nd DIW nozzle 419 to the center portion of the wafer W to perform a rinsing process.
According to the above embodiment, by providing the mist guard 80 which can be lifted up and down, the chemical solution component or moisture which is scattered is shielded by the lifted-up mist guard 80, and the chemical solution component or moisture can be efficiently prevented from adhering to the inner wall surface of the chamber 20 or the equipment in the chamber. Further, since the mist guard 80 has the protruding portion 82, the shielding effect described above can be further improved. Further, by lowering the mist guard 80 in advance, for example, the exhaust of the atmosphere gas above the wafer W during drying is not obstructed by the mist guard 80, and therefore, the drying efficiency can be improved.
In the above embodiment, the lower end portion of the outer circumferential tube portion 81 of the mist guard 80 located at the high position HG is located outside the protection bag 90, but may be located inside. In this case, as shown in fig. 10, a ventilation opening 87 may be provided at the lower end of the outer circumferential tube 81. Preferably, a plurality of vent openings 87 extending along the circumference of the mist guard 80 are provided at intervals along the circumference of the mist guard 80. By providing the ventilation opening 87, the gas can flow into the slit-shaped opening 97 through the side wall 20a of the chamber 20 from the wafer side space of the mist guard 80.
In the above embodiment, the exhaust cup 51 is a stationary cup-shaped component constituting the outermost periphery of the cup 50, but is not limited thereto. The exhaust cup 51 may be removed from the cup 50, and the drain cup 52 may be a stationary cup-shaped component constituting the outermost periphery of the cup 50. In this case, the mist guard 80 is provided outside the drain cup 52 so as to be adjacent to the drain cup 52. In fig. 4, the positional relationship between the drain cup 52 and the mist guard 80 in this case can be understood by regarding the drain cup 51 as the drain cup (52). In this case, for example, the piping constituting the drain lines 523a, 523b, and 523c is connected to a plant exhaust system (or a suction device such as a suction pump or an ejector) and functions as an exhaust line. In this case, a gas-liquid separation device such as a mist trap is provided in the exhaust line, and the liquid separated by the mist trap is discarded to, for example, a factory waste liquid system.
Another embodiment of the cleaning process of the mist guard 80 will be described with reference to fig. 11. In fig. 11, the same members as those already described with reference to fig. 1 to 10 are denoted by the same reference numerals, and redundant description is omitted.
The mist guard 80A shown in fig. 11 differs from the mist guard 80 shown in fig. 8 in that an annular (annular) gap forming portion 823 (a portion protruding downward) is provided on the lower surface of the protruding portion 82. The gap forming portion 823 extends radially inward from the inner peripheral surface of the outer peripheral tube portion 81 of the mist guard 80A. By providing the gap-forming portion 823, the gap G1 between the lower surface of the gap-forming portion 823 and the upper surface of the projecting portion 512 of the exhaust cup 51 facing the lower surface is narrower than the gap G2 between the portion of the mist guard 80A where the gap-forming portion 823 is not provided (the portion radially inward of the gap G1) and the upper surface of the projecting portion 512 of the exhaust cup 51 facing the upper surface.
The size of the gap G1 is large enough to allow the cleaning liquid to spread over the entire region of the gap G1, which will be described later, but is preferably small enough to prevent the cleaning liquid from easily flowing out of the gap G1, for example, 0.1mm to 0.5 mm.
The gap forming portion 823 extends continuously in the circumferential direction over the entire circumference of the protruding portion 82 of the mist guard 80A. A plurality of radial grooves 824 for guiding the cleaning liquid supplied from the cleaning liquid nozzle 110 to the gap G2 are formed in the lower surface of the gap forming portion 823. The gap between the groove bottom surface (groove upper end surface) of the radial groove 824 and the upper surface of the protruding portion 512 of the exhaust cup 51 facing the groove bottom surface is wider than the gap G1. The radial groove 824 extends radially inward and communicates with the gap G2. The radial slots 824 are provided in the same number as the cleaning solution nozzles 110. The cleaning liquid nozzle 110 is provided in the extension portion 512 at a position facing the radial groove 824, and supplies the cleaning liquid toward the radial groove 824. The radial slots 824 need not extend in the radial direction strictly speaking, but may extend at an angle to the radial direction.
A circumferential groove (circumferential groove) 825 extending in the circumferential direction over the entire circumference of the mist guard 80A is formed in the lower surface of the annular gap forming portion 823. The circumferential groove 825 intersects all of the radial grooves 824 and communicates with all of the radial grooves 824. The circumferential groove 825 is located radially inward of the cleaning liquid nozzle 110.
The following describes an effect of providing the gap forming portion 823, the radial groove 824, and the circumferential groove 825.
The mist guard 80A is positioned at the aforementioned low position LG as shown in fig. 11, and DIW as a cleaning liquid is discharged from the cleaning liquid nozzle 110. The cleaning liquid discharged from each cleaning liquid nozzle 110 flows into the gap G2 through the corresponding radial groove 824.
At this time, the flow rate of the cleaning liquid discharged from the cleaning liquid nozzle 110 is larger than the flow rate of the cleaning liquid flowing into the shield bag 90 through the gap G1. Therefore, the gap G2 can be filled with the cleaning liquid over the entire circumference. At this time, the lower surface of the projection 83 located at the inner peripheral end of the extension 82 of the mist guard 80A is in contact with the upper surface of the extension 512 of the exhaust cup 51, and therefore, the cleaning liquid hardly leaks from between the lower surface of the projection 83 and the upper surface of the extension 512. Therefore, the entire region in the circumferential direction in the gap G2 can be uniformly filled with the cleaning liquid.
The lower surface of the protrusion 83 may not contact the upper surface of the extension 512. In this case, the flow rate of the cleaning liquid discharged from the cleaning liquid nozzle 110 may be larger than the sum of the flow rate of the cleaning liquid flowing into the shield bag 90 through the gap G1 and the flow rate of the cleaning liquid flowing out from the gap between the protrusion 83 and the upper surface of the extension portion 512.
The cleaning liquid flowing in the radial grooves 824 also flows into the circumferential groove 825 and spreads in the circumferential direction. When the gap G2, the radial groove 824, and the circumferential groove 825 are filled with the cleaning liquid, the cleaning liquid spreads into the narrow gap G1. The entire area of the space between the lower surface of the protruding portion 82 of the mist guard 80A and the upper surface of the protruding portion 512 of the exhaust cup 51 (i.e., the gap G1+ G2) is filled with the cleaning liquid. The chemical solution and the reaction product adhering to the lower surface of the extension 82 and the upper surface of the extension 512 dissolve in the cleaning solution. The deposits dissolved in the cleaning solution are discharged into the protection bag 90 together with the cleaning solution. In this way, the surface of the mist guard 80A (the surface on the wafer W side) can be cleaned.
Thereafter, when the mist guard 80A is raised, the cleaning liquid in the space between the lower surface of the extension portion 82 of the mist guard 80A and the upper surface of the extension portion 512 of the exhaust cup 51 flows into the shield bag 90 along the upper surface of the extension portion 512 as an inclined surface. Through the above steps, the cleaning is ended. The above-described cleaning operation may be repeated.
According to the above-described configuration of the embodiment of fig. 11, the space between the lower surface of the extension portion 82 of the mist guard 80A and the upper surface of the extension portion 512 of the exhaust cup 51 can be filled with the cleaning liquid without omission, and the entire cleaning target surface of the lower surface of the extension portion 82 and the upper surface of the extension portion 512 can be cleaned uniformly.
In the above embodiment, the radial groove 824 is formed in the gap forming portion 823, but the radial groove 824 may not be formed. In this case, as shown in fig. 12, the cleaning liquid nozzle 110B is provided in the extension portion 512 of the exhaust cup 51 at a position radially inward of the gap forming portion 823B of the mist guard 80B. The gap G2 can be filled with the cleaning liquid over the entire circumference by the cleaning liquid supplied from the cleaning liquid nozzle 110B. The gap G1 between the lower surface of the gap-forming portion 823B and the upper surface of the extension portion 512 can be filled with the cleaning liquid over the entire circumference. The deposits dissolved in the cleaning solution are discharged into the protection bag 90B together with the cleaning solution. In this way, the surface of the mist guard 80B (the surface on the wafer W side) can be cleaned.
The cover 60 is provided around the SC2 nozzle 418 shown in fig. 11, i.e., the fixed nozzle. The cover 60 is fixed to the base plate 96. An opening 62 is formed in a front surface 61 of the cover 60 on a side facing the mist guard 80A. The SC2 liquid (treatment liquid) can be discharged from the SC2 nozzle 418 covered with the cover 60 toward the wafer W through the opening 62.
A shielding member 88 is provided at the uppermost portion of the outer circumferential tube portion of the mist guard 80A, i.e., the outermost peripheral portion of the upper surface of the protruding portion 82. The shielding member 88 may be a member that is integral with the mist guard 80A, or may be a member that is fixed to the mist guard 80A after being manufactured separately from the mist guard 80A. When the mist guard 80A is located at the low position LG, the shielding member 88 faces a portion of the front surface 61 of the cover 60 where the opening 62 is not formed, with a narrow gap 63 (for example, on the order of 1mm to 2 mm).
The gas is difficult to flow toward the narrow gap 63. Therefore, when the discharge of the SC2 liquid from the SC2 nozzle 418 is stopped, the vapor of the SC2 liquid (processing liquid) staying in the vicinity of the discharge port of the SC2 nozzle 418 can be diffused into the chamber 20, and when the simulated distribution is performed from the SC2 nozzle 418 (since the nozzle is fixed, the discharge flow rate in the simulated distribution is very small), the vapor of the SC2 liquid (processing liquid) can be prevented from being diffused into the chamber 20.
The cover 60 and the shielding member 88 may be integrated. In this case, the cover 60 and the shielding member 88 are lifted and lowered in conjunction with the mist guard 80A. In this case, the gap 63 provided to prevent interference between the cover 60 and the shielding member 88 when the mist guard 80A is lifted and lowered is not necessary. Therefore, the vapor of the SC2 liquid (processing liquid) can be more reliably prevented from diffusing into the chamber 20.
A aqueduct 64 (liquid guide member) is provided below the discharge port of the SC2 nozzle 418. The SC2 liquid dropped from the discharge port of the SC2 nozzle 418 flows into the shield bag 90 through the aqueduct 64. Therefore, the bottom plate 96 can be prevented from being contaminated by the SC2 liquid dripping from the SC2 nozzle 418 or from being diffused into the chamber 20 by evaporation of the SC2 dripping on the bottom plate 96.
In the above embodiments, the substrate to be processed is a semiconductor wafer, but the substrate is not limited thereto, and may be another substrate, for example, a glass substrate for a liquid crystal display, a ceramic substrate, or the like.

Claims (18)

1. A substrate processing apparatus, comprising:
a substrate holding section for holding a substrate;
at least 1 processing liquid nozzle, it squirts processing liquid to the base plate kept to the said base plate keeping part;
a processing container for accommodating the substrate holding portion and the processing liquid nozzle;
a fixed cup disposed around the substrate holding portion, the fixed cup receiving at least a processing liquid or a mist of the processing liquid supplied to the substrate and being relatively immovable with respect to the processing container;
a mist guard provided outside the fixed cup so as to surround the fixed cup, the mist guard blocking liquid that flies outward over the fixed cup;
a guard lifting mechanism for lifting the mist guard to a 1 st guard height and a 2 nd guard height lower than the 1 st guard height; and
a control unit for controlling the shield elevating mechanism so that the mist shield is positioned at the 1 st shield height when the processing liquid is supplied from the processing liquid nozzle to the substrate held by the substrate holding unit and so that the mist shield is positioned at the 2 nd shield height when the substrate is dried,
the mist guard has: a cylindrical tube portion; and a protruding portion that protrudes from an upper portion of the cylindrical portion toward an inner side of the cylindrical portion and above the fixed cup,
an airflow is created between the mist guard and the fixed cup when the mist guard is at the 1 st protective height and an airflow is created above the mist guard when the mist guard is at the 2 nd protective height.
2. The substrate processing apparatus according to claim 1,
the fog guard is provided with: a bottom plate defining a bottom of a processing space within the processing vessel; and an exhaust port configured to exhaust the atmosphere gas in the processing space to an outside of the processing space.
3. The substrate processing apparatus according to claim 2,
the bottom plate extends to a side wall of the processing container, and an upper surface of the bottom plate is inclined in such a manner that a height thereof becomes lower as approaching the side wall.
4. The substrate processing apparatus according to claim 1,
the substrate processing apparatus is provided with a 1 st processing liquid nozzle and a 2 nd processing liquid nozzle as the processing liquid nozzle,
the substrate processing apparatus further includes: a 1 st nozzle arm for holding the 1 st treatment liquid nozzle and moving the 1 st treatment liquid nozzle; a 2 nd nozzle arm which holds the 2 nd treatment liquid nozzle and moves the 2 nd treatment liquid nozzle; and a control unit for controlling the operation of the substrate processing apparatus,
the control unit causes the mist guard to be located at a 3 rd guard height that is an intermediate between the 1 st guard height and the 2 nd guard height when performing a nozzle replacement operation of: the 2 nd nozzle arm is driven to advance the 2 nd processing liquid nozzle from a position outside the substrate held by the substrate holding portion to a position above the substrate, and the 1 st nozzle arm is driven to retract the 1 st processing liquid nozzle from a position above the substrate to a position outside the substrate.
5. The substrate processing apparatus according to claim 4,
the substrate processing apparatus includes: a 1 st arm lifting mechanism for lifting the 1 st nozzle arm between a 1 st arm height and a 2 nd arm height lower than the 1 st arm height; and
a 2 nd arm lifting mechanism for lifting the 2 nd nozzle arm between a 3 rd arm height and a 4 th arm height lower than the 3 rd arm height,
the control unit controls the 1 st arm elevating mechanism to position the 1 st nozzle arm at the 1 st arm height and controls the 2 nd arm elevating mechanism to position the 2 nd nozzle arm at the 3 rd arm height when the nozzle replacement operation is performed.
6. The substrate processing apparatus according to claim 4,
the substrate processing apparatus further includes a rotating mechanism for rotating the substrate held by the substrate holding portion,
the control unit controls the rotation mechanism when the nozzle replacement operation is performed, and reduces the rotation speed of the substrate before the nozzle replacement operation compared with the rotation speed when the 1 st treatment liquid nozzle ejects the treatment liquid onto the substrate.
7. The substrate processing apparatus according to claim 1,
the substrate processing apparatus further includes a fixed nozzle for supplying the processing liquid to the substrate held by the substrate holding portion from outside the mist guard, and the mist guard is formed with a liquid passage opening for allowing the processing liquid discharged from the fixed nozzle to reach the substrate through the mist guard when the mist guard is located at the 1 st guard height.
8. The substrate processing apparatus according to claim 1,
the substrate processing apparatus further includes:
a mist guard housing section that houses the cylindrical section of the mist guard; and
and a discharge unit configured to discharge the liquid or gas that has flowed into the mist guard housing unit.
9. The substrate processing apparatus according to claim 1,
the substrate processing apparatus further includes a cleaning mechanism for cleaning a surface of the mist guard facing the fixed cup.
10. The substrate processing apparatus according to claim 1,
the fixed cup body has an inclined upper surface extending toward a center portion of the substrate held by the substrate holding portion, the inclined upper surface being inclined so that a height thereof becomes higher as it approaches the center portion of the substrate, and the inclined upper surface being in contact with a tip portion of the protruding portion of the mist guard positioned at the 2 nd guard height, whereby a space facing a surface of the mist guard on a side facing the fixed cup body is isolated from a space above the substrate held by the substrate holding portion.
11. The substrate processing apparatus according to claim 9,
the cleaning mechanism performs cleaning of the mist guard by supplying a cleaning liquid when the mist guard is located at the 2 nd guard height.
12. The substrate processing apparatus according to claim 11,
the fixed cup body has: a cylindrical tube portion; and a projecting portion projecting from an upper portion of the cylindrical portion toward an inner side of the cylindrical portion,
a gap forming portion formed with a 1 st gap between a lower surface of the gap forming portion and an upper surface of the protruding portion of the fixed cup, and a 2 nd gap between a portion of the mist guard where the gap forming portion is not formed and the upper surface of the protruding portion of the fixed cup is formed on a lower surface of the protruding portion of the mist guard,
the cleaning mechanism has a cleaning liquid nozzle for supplying a cleaning liquid to the 2 nd gap.
13. The substrate processing apparatus according to claim 12,
the gap forming portion extends over the entire circumference of the protruding portion of the mist guard,
the gap forming part has a lower surface formed with: a radial groove extending in a radial direction; and a circumferential groove intersecting the radial groove and extending in a circumferential direction,
the cleaning solution nozzle is arranged on the fixed cup body at a position opposite to the radial groove, and the circumferential groove is arranged on the inner side of the cleaning solution nozzle in the radius direction.
14. The substrate processing apparatus according to claim 1,
the fixed cup has a cup-shaped component that is immovable with respect to the fixed cup on a radially outer side of the fixed cup, and a space between the fixed cup and the cup-shaped component is evacuated.
15. The substrate processing apparatus according to claim 2,
when the mist guard is located at the 1 st protection height, a lower end of the cylindrical portion of the mist guard is located higher than an upper surface of the bottom plate.
16. A substrate processing method using a substrate processing apparatus, the substrate processing apparatus comprising:
a substrate holding section for holding a substrate;
at least 1 processing liquid nozzle, it squirts processing liquid to the upper surface of the base plate kept to the above-mentioned base plate keeping part;
a processing container for accommodating the substrate holding portion and the processing liquid nozzle;
a fixed cup disposed around the substrate holding portion, the fixed cup receiving a processing liquid or a mist of the processing liquid supplied to the substrate and being relatively immovable with respect to the processing container;
a mist guard provided outside the fixed cup so as to surround the fixed cup, the mist guard blocking liquid that flies outward over the fixed cup; and
a guard lifting mechanism that lifts the mist guard,
the mist guard has: a cylindrical tube portion; and a projecting portion projecting from an upper end of the cylindrical portion toward the fixed cup,
the substrate processing method includes the steps of:
supplying a processing liquid from the processing liquid nozzle to the substrate held by the substrate holding portion in a state where the mist guard is positioned at a 1 st guard height; and
drying the substrate in a state where the mist guard is located at a 2 nd guard height lower than the 1 st guard height,
wherein an airflow is formed between the mist guard and the fixed cup when the mist guard is at the 1 st guard height and an airflow is formed over the mist guard when the mist guard is at the 2 nd guard height.
17. The substrate processing method according to claim 16,
the substrate processing apparatus is provided with a 1 st processing liquid nozzle and a 2 nd processing liquid nozzle as the processing liquid nozzle, and further comprises: a 1 st nozzle arm for holding the 1 st treatment liquid nozzle and moving the 1 st treatment liquid nozzle; and a 2 nd nozzle arm for holding the 2 nd treatment liquid nozzle and moving the 2 nd treatment liquid nozzle,
the substrate processing method includes, as a step of supplying a processing liquid to the substrate: supplying a processing liquid to the substrate from the 1 st processing liquid nozzle positioned above the substrate in a state where the 2 nd processing liquid nozzle is retracted from above the substrate; and supplying a processing liquid to the substrate from the 2 nd processing liquid nozzle positioned above the substrate in a state where the 1 st processing liquid nozzle is retracted from above the substrate,
positioning the mist guard at a 3 rd guard height intermediate the 1 st and 2 nd guard heights when performing the following nozzle change operation: the second processing liquid nozzle is moved forward from a position outside the substrate held by the substrate holding unit to a position above the substrate, and the first processing liquid nozzle is retracted from a position above the substrate to a position outside the substrate.
18. A storage medium storing a computer program that, when executed by a computer constituting a control device of a substrate processing apparatus, controls an operation of the substrate processing apparatus to execute the substrate processing method according to claim 16.
CN201680044518.2A 2015-07-29 2016-07-28 Substrate processing apparatus, substrate processing method, and storage medium Active CN107851572B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2015-149916 2015-07-29
JP2015149916 2015-07-29
JP2016122690A JP6740028B2 (en) 2015-07-29 2016-06-21 Substrate processing apparatus, substrate processing method and storage medium
JP2016-122690 2016-06-21
PCT/JP2016/072157 WO2017018481A1 (en) 2015-07-29 2016-07-28 Substrate processing device, substrate processing method, and storage medium

Publications (2)

Publication Number Publication Date
CN107851572A CN107851572A (en) 2018-03-27
CN107851572B true CN107851572B (en) 2022-02-18

Family

ID=57884517

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680044518.2A Active CN107851572B (en) 2015-07-29 2016-07-28 Substrate processing apparatus, substrate processing method, and storage medium

Country Status (2)

Country Link
CN (1) CN107851572B (en)
WO (1) WO2017018481A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6890992B2 (en) * 2017-02-10 2021-06-18 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing equipment and substrate processing method
JP7197376B2 (en) * 2019-01-17 2022-12-27 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
JP7161415B2 (en) * 2019-01-21 2022-10-26 株式会社ディスコ processing equipment
CN112768378B (en) * 2020-12-31 2023-02-10 上海至纯洁净系统科技股份有限公司 Staggered wafer surface wet cleaning system and cleaning method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102078850A (en) * 2009-10-16 2011-06-01 东京毅力科创株式会社 Liquid processing apparatus, liquid processing method and storage medium
JP2013187395A (en) * 2012-03-08 2013-09-19 Dainippon Screen Mfg Co Ltd Substrate processing apparatus and substrate processing method
KR20140113339A (en) * 2013-03-15 2014-09-24 다이니폰 스크린 세이조우 가부시키가이샤 Substrate processing apparatus
JP2015056431A (en) * 2013-09-10 2015-03-23 東京エレクトロン株式会社 Substrate processing system, substrate processing method and computer readable storage medium storing substrate processing program
CN104505354A (en) * 2013-08-08 2015-04-08 斯克林集团公司 Substrate Processing Apparatus And Substrate Processing Method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4488506B2 (en) * 2004-08-30 2010-06-23 大日本スクリーン製造株式会社 Substrate processing apparatus and substrate processing method
JP2008159871A (en) * 2006-12-25 2008-07-10 Dainippon Screen Mfg Co Ltd Substrate processing apparatus and substrate processing method
JP4901650B2 (en) * 2007-08-31 2012-03-21 東京エレクトロン株式会社 Liquid processing apparatus, liquid processing method, and storage medium
JP5151629B2 (en) * 2008-04-03 2013-02-27 東京エレクトロン株式会社 Substrate cleaning method, substrate cleaning apparatus, developing method, developing apparatus, and storage medium
JP2010232528A (en) * 2009-03-27 2010-10-14 Pre-Tech Co Ltd Single wafer cleaning apparatus
JP5645796B2 (en) * 2011-11-21 2014-12-24 東京エレクトロン株式会社 Liquid processing apparatus and liquid processing method
JP5543633B2 (en) * 2012-11-26 2014-07-09 東京エレクトロン株式会社 Substrate cleaning system, substrate cleaning method, and storage medium
JP5941023B2 (en) * 2013-08-21 2016-06-29 東京エレクトロン株式会社 Substrate cleaning apparatus, substrate cleaning method, and computer-readable recording medium

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102078850A (en) * 2009-10-16 2011-06-01 东京毅力科创株式会社 Liquid processing apparatus, liquid processing method and storage medium
JP2013187395A (en) * 2012-03-08 2013-09-19 Dainippon Screen Mfg Co Ltd Substrate processing apparatus and substrate processing method
KR20140113339A (en) * 2013-03-15 2014-09-24 다이니폰 스크린 세이조우 가부시키가이샤 Substrate processing apparatus
CN104505354A (en) * 2013-08-08 2015-04-08 斯克林集团公司 Substrate Processing Apparatus And Substrate Processing Method
JP2015056431A (en) * 2013-09-10 2015-03-23 東京エレクトロン株式会社 Substrate processing system, substrate processing method and computer readable storage medium storing substrate processing program

Also Published As

Publication number Publication date
CN107851572A (en) 2018-03-27
WO2017018481A1 (en) 2017-02-02

Similar Documents

Publication Publication Date Title
JP6740028B2 (en) Substrate processing apparatus, substrate processing method and storage medium
CN106449470B (en) Substrate liquid processing apparatus and substrate liquid processing method
CN107039306B (en) Substrate processing apparatus and method for cleaning processing chamber
CN108292599B (en) Substrate liquid processing apparatus, substrate liquid processing method, and storage medium
US8512478B2 (en) Cleaning and drying-preventing method, and cleaning and drying-preventing apparatus
US9190311B2 (en) Liquid arm cleaning unit for substrate processing apparatus
CN107851572B (en) Substrate processing apparatus, substrate processing method, and storage medium
KR102482211B1 (en) Substrate processing apparatus, substrate processing method, and storage medium
CN107527839B (en) Substrate processing apparatus, cleaning method for substrate processing apparatus, and storage medium
TWI641035B (en) Substrate processing apparatus
TWI687971B (en) Substrate processing device and substrate processing method
CN111446150A (en) Substrate processing method and substrate processing apparatus
JP3958594B2 (en) Substrate processing apparatus and substrate processing method
CN106816399B (en) Substrate processing apparatus and method
US20200126817A1 (en) Substrate processing apparatus and substrate processing method
CN112997277B (en) Substrate processing apparatus and cleaning method for substrate processing apparatus
JP2018147979A (en) Substrate processing device
KR101583111B1 (en) Liquid processing apparatus and liquid processing method
JP6125449B2 (en) Substrate liquid processing apparatus and substrate liquid processing method
JP2022189496A (en) Substrate processing method and substrate processing device
JP6370678B2 (en) Substrate liquid processing equipment
JP2023045549A (en) Substrate processing device
JP2018163898A (en) Substrate processing apparatus

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant