CN107851572A - Substrate board treatment, substrate processing method using same and storage medium - Google Patents

Substrate board treatment, substrate processing method using same and storage medium Download PDF

Info

Publication number
CN107851572A
CN107851572A CN201680044518.2A CN201680044518A CN107851572A CN 107851572 A CN107851572 A CN 107851572A CN 201680044518 A CN201680044518 A CN 201680044518A CN 107851572 A CN107851572 A CN 107851572A
Authority
CN
China
Prior art keywords
substrate
nozzle
liquid
mist
protector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201680044518.2A
Other languages
Chinese (zh)
Other versions
CN107851572B (en
Inventor
伊藤规宏
东岛治郎
绪方信博
大塚贵久
道木裕
道木裕一
桥本佑介
相浦博
相浦一博
后藤大辅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2016122690A external-priority patent/JP6740028B2/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN107851572A publication Critical patent/CN107851572A/en
Application granted granted Critical
Publication of CN107851572B publication Critical patent/CN107851572B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B17/00—Methods preventing fouling
    • B08B17/02—Preventing deposition of fouling or of dust
    • B08B17/025—Prevention of fouling with liquids by means of devices for containing or collecting said liquids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
    • B08B2203/0229—Suction chambers for aspirating the sprayed liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
    • B08B2203/0264—Splash guards
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/022—Cleaning travelling work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Abstract

Substrate board treatment possesses：Fixed cup (51), it surrounds board holder (31) and receives to be fed into the treatment fluid of substrate or the mist for the treatment of fluid, and relatively motionless relative to process container；Mist protector (80)；And protector elevating mechanism (84), it lifts mist protector.Mist protector is arranged at the outside of fixed cup in a manner of surrounding fixed cup, and the liquid crossed the top of fixed cup and dispersed outward is blocked.Mist protector has：The cylinder portion (81) of tubular；And extension (82), its side from the upper end in cylinder portion towards and to fixed cup are stretched out.

Description

Substrate board treatment, substrate processing method using same and storage medium
Technical field
The present invention relates to by supplying treatment fluid to the substrate of rotation to implement the technology of liquid handling to substrate.
Background technology
The manufacturing process of semiconductor device includes the liquid handlings such as chemical solution cleans processing or wet etch process.As The liquid handling device of liquid handling, is known to a kind of liquid handling device as implementing to substrates such as semiconductor crystal wafers, should Liquid handling device possesses：Maintaining part, it keeps substrate in the process container for be referred to as chamber；Rotating mechanism, it makes partly to lead The substrates such as body wafer rotate；Nozzle, it supplies treatment fluid to the substrate of rotation；And cup, it receives to be thrown out of the treatment fluid come.
The major part for being supplied to the treatment fluid of substrate is reclaimed by cup, but a part for the treatment fluid after being atomized is to the outside of cup Disperse.If the treatment fluid to disperse out is attached to the inwall of chamber, is formed around substrate and be derived from treatment fluid, be particularly derived from The atmosphere of chemical solution, substrate that the chemical solution composition in the atmosphere is attached in liquid handling sometimes and pollute substrate.Separately Outside, if attachment of moisture also allows for the inwall of chamber：Humidity around substrate rises, the drying process production to substrate Raw harmful effect.
Accordingly, it is intended that prevent from being attached to chamber inner wall from the substrate treatment fluid to outside cup that disperses as far as possible.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2008-53690 publications
The content of the invention
The present invention provides a kind of technology that can prevent from being attached to chamber inner wall from the treatment fluid that substrate disperses to outside cup.
According to an embodiment of the present invention, there is provided a kind of substrate board treatment, the substrate board treatment possess：Substrate is protected Portion is held, it keeps substrate；At least one handles nozzle for liquid, and it sprays treatment fluid to the substrate for remaining to the board holder；Place Container is managed, it houses the board holder and the processing nozzle for liquid；Fixed cup, it is configured at the board holder Around, the fixation cup receives to be fed at least treatment fluid of substrate or the mist for the treatment of fluid, and relative to the process container It is relatively motionless；Mist protector, it is arranged at the outside of the fixed cup in a manner of surrounding the fixed cup, and the mist is prevented Guard blocks to the liquid crossed the top of the fixed cup and dispersed outward；And elevating mechanism, it makes described Mist protector has to the 1st protection height and the 2nd protection lift in height highly lower than the described 1st protection, the mist protector： The cylinder portion of tubular；And extension, it is from the top of cartridge towards the inner side of cartridge and to the fixed cup Top is stretched out.
According to another embodiment of the present invention, there is provided a kind of substrate processing method using same, used in the substrate processing method using same Substrate board treatment, the substrate board treatment possess：Board holder, it keeps substrate；At least one handle nozzle for liquid, its to The upper surface for remaining to the substrate of the board holder sprays treatment fluid；Process container, its house described board holder and The processing nozzle for liquid；Fixed cup, it is configured at around the board holder, and the fixation cup receives to be fed into base The treatment fluid of plate or the mist for the treatment of fluid, and it is relatively motionless relative to the process container；Mist protector, it is described solid to surround The mode for determining cup is arranged at the outside of the fixed cup, and the mist protector is outside to crossing the top of the fixed cup The liquid just to disperse is blocked；And elevating mechanism, it lifts the mist protector, and the mist protector has：Tubular Cylinder portion；And extension, it stretches out from the upper end of cartridge towards the fixed cup side, and the substrate processing method using same includes Following process：Make the mist protector in the state of the 1st protection height, from the nozzle to by the board holder The substrate supply treatment fluid that remain；It is and high making the mist protector be located at 2nd protection highly lower than the described 1st protection In the state of degree, make the drying substrates.
According to another embodiment of the invention, there is provided a kind of storage medium, the storage medium store computer program, Wherein, when the computer of the control device of substrate board treatment be configured in the computer program performing, the computer pair The action of the substrate board treatment is controlled and performs above-mentioned substrate processing method using same.
According to the embodiment of the invention described above, by setting the mist protector with extension, can prevent from crossing cup And the treatment fluid to disperse out is attached to the inwall of process container.
Brief description of the drawings
Fig. 1 is the top view of the schematic configuration of the base plate processing system for the embodiment for representing invention.
Fig. 2 is the longitudinal section for the structure for representing processing unit.
Fig. 3 is the top view for the structure for representing processing unit.
Fig. 4 is the skeleton diagram for illustrating the motion of mist protector and nozzle arm.
The explanation of the motion of gas and drop when Fig. 5 is for illustrating that mist protector is in high position and centre position Figure.
The explanation figure of the motion of gas and drop when Fig. 6 is for illustrating that mist protector is located at lower position.
Fig. 7 is the outline longitudinal section illustrated to the logical liquid opening for being arranged at mist protector.
Fig. 8 is the partial longitudinal sectional view illustrated to the wiper mechanism of mist protector.
Fig. 9 is the top view for illustrating the motion of nozzle arm.
Figure 10 is the outline longitudinal section illustrated to the vent openings for being arranged at mist protector.
Figure 11 is the outline longitudinal section for representing to possess the embodiment of the variation of fixed nozzle cover and mist protector.
Figure 12 is the outline longitudinal section of the embodiment for another variation for representing to possess mist protector.
Embodiment
Fig. 1 is the figure of the schematic configuration for the base plate processing system for representing present embodiment.Hereinafter, in order that position relationship is bright Really, it is specified that orthogonal X-axis, Y-axis and Z axis, vertical is set to upwardly-directed by Z axis positive direction.
As shown in figure 1, base plate processing system 1 possesses input/output station 2 and treating stations 3.Input/output station 2 and treating stations 3 It is disposed adjacently.
Input/output station 2 possesses bearing part mounting portion 11 and delivery section 12.The multiple of multiple wafers W are housed with horizontality Bearing part C is placed in bearing part mounting portion 11.
Delivery section 12 is disposed adjacently with bearing part mounting portion 11, is internally provided with base board delivery device 13 and junction 14.Base board delivery device 13 possesses the substrate holding mechanism for keeping wafer W.In addition, base board delivery device 13 can be to level side To moving with vertical and turned round centered on vertical axis, using substrate holding mechanism bearing part C with Wafer W conveying is carried out between junction 14.
Treating stations 3 are disposed adjacently with delivery section 12.Treating stations 3 possess delivery section 15 and multiple processing units 16.It is multiple Processing unit 16 is set with being arranged in the both sides of delivery section 15.
Delivery section 15 is internally provided with base board delivery device 17.Base board delivery device 17 possesses the substrate for keeping wafer W Maintaining body.In addition, base board delivery device 17 can be moved to horizontal direction and vertical and using vertical axis as Center is turned round, and carries out wafer W conveying between junction 14 and processing unit 16 using substrate holding mechanism.
Processing unit 16 carries out predetermined processing substrate to the wafer W conveyed by base board delivery device 17.
In addition, base plate processing system 1 possesses control device 4.Control device 4 is such as computer, possesses the He of control unit 18 Storage part 19.The program storage being controlled to the various processing performed in base plate processing system 1 is in storage part 19.Control unit 18 by reading and performing the program stored to storage part 19, and the action to base plate processing system 1 is controlled.
In addition, the program is recorded in the storage medium that can be read by computer, can also be installed from the storage medium To the storage part 19 of control device 4.As the storage medium that can be read by computer, such as hard disk (HD), floppy disk be present (FD), CD (CD), magneto-optic disk (MO) and storage card etc..
In the base plate processing system 1 formed as described above, first, the base board delivery device 13 of input/output station 2 from The bearing part C for being placed on bearing part mounting portion 11 takes out wafer W, and the wafer W taken out is placed in into junction 14.It is placed on friendship The base board delivery device 17 at the processed stations 3 of the wafer W of socket part 14 takes out from junction 14 and inputted to processing unit 16.
The wafer W of processing unit 16 is input to after processed unit 16 has been handled, by base board delivery device 17 from Reason unit 16 exports and is placed in junction 14.Then, the wafer W being disposed for being placed on junction 14 conveys dress by substrate 13 are put to return to the bearing part C of bearing part mounting portion 11.
Then, reference picture 2 illustrates to the structure of processing unit 16.Fig. 2 is the schematic configuration for representing processing unit 16 Figure.As shown in Fig. 2 processing unit 16 possesses chamber 20, substrate holding mechanism 30, treatment fluid supply unit 40 and cup 50. Treatment fluid supply unit 40 is to wafer W supplying processing fluids.
Chamber 20 houses substrate holding mechanism 30, treatment fluid supply unit 40 and cup 50.Set at the top of chamber 20 There are FFU (Fan Filter Unit：Blower fan filtering unit) 21.FFU21 forms sinking in chamber 20.In FFU21 blowout The underface of mouth sets the cowling panel 22 formed with many holes (not shown), makes the sinking flowed in the space in chamber 20 The distribution of gas optimizes.
Substrate holding mechanism 30 possesses maintaining part (board holder) 31, rotary shaft 32 and drive division 33.Maintaining part 31 Wafer W can flatly be kept.Drive division 33 rotates maintaining part 31 by rotary shaft 32, thus, makes to remain to maintaining part 31 Wafer W around vertical axis rotate.
Maintaining part 31 has：Discoid base 31a；Multiple holding key element 31b, it is arranged at base 31a, and keeps brilliant Circle W；And lifter pin 31c, it is supported in input and output of the wafer W relative to processing unit 16 with keeping key element 31b to separate Wafer W lower surface.Keep key element 31b can be by that can keep/discharge wafer W peripheral part to be installed to base 31a's Movable holding claws or the retaining pin fixed to base 31a etc. are formed.
Lifter pin 31c is fixed on the lifting pin plate being incorporated in the ring-type of the recess of base 31a upper surface formation 31d.Lift pin plate 31d using elevating mechanism (not shown) to rise, wafer W can be lifted.It can enter in chamber 20 Wafer W handing-over is carried out between lifting pin plate 31d after the arm of base board delivery device 17 and rising.
Hereinafter, cup (cup assembly) 50 is discussed in detail.Cup 50 has to be reclaimed, simultaneously to the treatment fluid to be dispersed from wafer W And to effect that the air-flow around wafer W is controlled.Cup 50 is configured in a manner of surrounding maintaining part 31, (geometric In the meaning) there is the shape of substantially rotary body.Cup 50 is made up of multiple inscapes.Cup 50 has：Motionless (fixed) row Gas cup 51, it is located at outermost；And the discharge opeing cup 52 for the treatment of fluid guiding, it is located at the inner side of the exhaust cup 51.
In addition, the 1st rotating cup 53 and the 2nd rotating cup 54 are installed on the base 31a of maintaining part 31, revolved together with base 31a Turn.What the surface (upper surface) that the 1st rotating cup 53 and the 2nd rotating cup 54 are fed into wafer W was dispersed outward from wafer W afterwards Liquid is caught and oliquely downward (radial direction outwardly and lower section) guiding.2nd rotating cup 54 also has to being supplied to wafer W's The function of being guided after the back side (lower surface) from the wafer W liquid to disperse outward.In addition, the 1st rotating cup the 53 and the 2nd revolves Revolving cup 54 also has the function being controlled to the air-flow around wafer W.
Discharge opeing cup 52 has discharge opeing cup main body 521, the 1st moveable cup key element 522 (the 1st movable cup) and the 2nd moveable cup Key element 523 (the 2nd movable cup).Discharge opeing cup main body 521 has：The periphery cylinder portion 521a extended along substantially vertical；Stretch Go out portion 521b；Bottom 521c and inner peripheral portion 521d.Extension 521b is from periphery cylinder portion 521a upper end towards wafer W sides Extension.Two convex portions 521e, 521f extend upward from bottom 521c.
Between periphery cylinder portion 521a and convex portion 521e, between convex portion 521e and convex portion 521f and convex portion 521f with it is interior Between all portion 521d respectively delimit have for be respectively subjected to Acidic Liquid, alkalies, organic liquor hydrops portion 522a, 522b, 522c. Hydrops portion 522a, 522b, 522c is via tapping line 523a, 523b, the 523c and Acidic Liquid each connected (DR1), alkali Property liquid is connected respectively with (DR2), organic liquor with the workshop-sink system of (DR3).
Being fitted together to respectively in a manner of upper and lower freedom of motion in convex portion 521e, 521f has the 1st moveable cup key element the 522, the 2nd movable Cup key element 523.1st moveable cup key element 522 and the 2nd moveable cup key element 523 are lifted using elevating mechanism (not shown).Pass through change The position of 1st moveable cup key element 522 and the 2nd moveable cup key element 523, it will can be drawn after being dispersed out outward from wafer W Lead (in 522a, 522b, 522c any to hydrops portion corresponding to the treatment fluid to difference of the 1st rotating cup 53 and the 2nd rotating cup 54 It is individual) guiding.
Exhaust cup 51 has periphery cylinder portion 511, extension 512, bottom 513 and inner peripheral portion 514.Exhaust cup 51 with Formed with exhaust channel 551 between discharge opeing cup main body 521 surface facing with each other.In the row of being provided with of bottom 513 of exhaust cup 51 Gas port 552, discharge duct (exhaust pathway) 553 is connected with the exhaust outlet 552.Discharge duct 553 and the factory of reduced atmosphere Factory's discharge duct connection (C-EXH) (not shown) of gas extraction system.Disc valve or regulating valve etc. are folded with discharge duct 553 Flow control valve 554., can be to the gas that is aspirated via exhaust channel 551 by the way that the aperture of flow control valve 554 is adjusted The flow of body is adjusted.In addition it is also possible in the equipment of the promotion such as the sandwiched injector of discharge duct 553 or exhaust pump exhaust.
Then, treatment fluid supply unit 40 is illustrated.Treatment fluid supply unit 40 has supplying processing fluid (liquid Or gas) multiple nozzles.As shown in figure 3, the plurality of nozzle includes：Spray the SC1 nozzles 411 of SC1 liquid；Ejection includes DIW The AS nozzles 412 of the drop of (pure water) and two fluids of nitrogen；Spray DHF (diluted hydrofluoric acid) DHF nozzles 413；Spray pure water (DIW) 1DIW nozzles 414；Spray the IPA nozzles 415 of the IPA (isopropanol) after warm heat；By nitrogen towards under vertical The 1st nitrogen nozzle 416 just sprayed；The 2nd nitrogen nozzle 417 that nitrogen is sprayed obliquely downward；Spray the SC2 sprays of SC2 liquid Mouth 418；And spray the 2DIW nozzles 419 of pure water (DIW).
AS nozzles 412 are atomized DIW, this are contained to DIW and nitrogen after atomization by converging DIW and nitrogen flowing Two fluids of gas spray.Nitrogen is not supplied to AS nozzles 412 and be only supplied DIW, so as to only make no mist from AS nozzles 412 The DIW of change sprays.Also it can be sprayed from IPA nozzles 415 and DIW has compatibility, volatility higher than DIW volatility and table The face warp tension ratio DIW low solvent in addition to DIW of surface tension.
SC1 nozzles 411 and AS nozzles 412 are held in the 1st nozzle arm 421.DHF nozzles 413,1DIW nozzles 414 and IPA Nozzle 415 is held in the 2nd nozzle arm.1st nitrogen nozzle 416 and the 2nd nitrogen nozzle 417 are held in the 3rd nozzle arm.1st nozzle Arm 421, the 2nd nozzle arm 422, the 3rd nozzle arm 423 can utilize and be arranged at respective arm drive mechanism 431,432,433 around lead The axis that hangs down is turned round and can lifted along vertical.Each arm drive mechanism 431,432,433 can possess rotation motor (not Diagram) it is (not shown) as realizing as the rotary motion mechanism and cylinder for realizing for example above-mentioned revolute function The elevating mechanism (arm elevating mechanism) of above-mentioned elevating function.
The 1st nozzle arm 421 is turned round by using arm drive mechanism 431, SC1 nozzles 411 and 412, AS nozzles can be made Arbitrary position (reference picture between the position of the standby place 441 of the foreign side of cup 50 and wafer W central part Wc surface 3 arrow M1).The 2nd nozzle arm 422 is turned round by using arm drive mechanism 432, DHF nozzles 413,1DIW sprays can be made Mouth 414 and IPA nozzles 415 are located between the position of the standby place 442 of the foreign side of cup 50 and wafer W central part Wc surface Arbitrary position (the arrow M2 of reference picture 3).The 3rd nozzle arm 423 is turned round by using arm drive mechanism 433, can be made 1st nitrogen nozzle 416 and the 2nd nitrogen nozzle 417 are located at the standby place 443 of starting and the wafer W central part Wc of the foreign side of cup 50 Surface position between arbitrary position (the arrow M3 of reference picture 3).
In this manual, illustrate for convenient, the surface of standby place (441,442,443) is also referred to as corresponding The original position of nozzle (411~417), corresponding nozzle arm when corresponding nozzle (411~417) to be located to original position The position of (421,422,423) is also referred to as the original position of the nozzle arm (421,422,423).
Using the arm elevating mechanism for being arranged at arm drive mechanism 431,432,433, can make each nozzle arm (421,422, 423) (reference picture 4) is moved between high position HN (the 1st (the 3rd) arm height) and lower position LN (the 2nd (the 4th) arm height), with This accompanies, can make to be carried to the nozzle of the nozzle arm approached wafer W approximated position with it is remote relative to approximated position Moved between wafer W disconnected position.
SC2 nozzles 418 and 2DIW nozzles 419 are motionless fixed nozzles, are fixed on the bottom plate 96 then discussed. SC2 nozzles 418 and 2DIW nozzles 419 are sprayed by spraying liquid with the flow predefined from these nozzles 418,419 The liquid come is danced in the air by describing parabola and set in a manner of being fallen to wafer W central part Wc.
Cylinder 450 extends in the inside of rotary shaft 32 along above-below direction.Even if cylinder 420 is rotated with rotary shaft 32 Also non-rotary mode is set for it.In the inside of cylinder 420, one or more treatment fluid feed paths 451 are (in fig. 2 only It is shown with 1) extend along above-below direction.The upper end open for the treatment of fluid feed path 451 turns into for supplying processing fluid Lower surface nozzle 452.The back side (lower surface) supply from the lower surface nozzle 452 to wafer W that can be from for example as flushing liquor or Purge DIW, the nitrogen as dry gas or purge gas of liquid.In the following description, the lower surface nozzle is not referred to 452。
In above-mentioned treatment fluid any treatment fluid from corresponding treatment fluid supply source (such as storage SC1, DHF Deng chemical solution supplying tank, as factory power be provided pure water, nitrogen etc. the various supply units such as supply source in Any one (not shown)) supplied via corresponding treatment fluid feed mechanism (not shown) to each nozzle (411~419).Processing Fluid supply mechanism can by each nozzle (411~419) is connected with corresponding treatment fluid supply source supply pipeline, sandwiched Flow-control equipments such as open and close valve, flow control valve in the supply pipeline etc. are formed.
From processing nozzle for liquid (SC1 nozzles 411, AS nozzles 412, DHF nozzles 413,1DIW nozzles 414, SC2 nozzles 418th, 2DIW nozzles 419 etc.) be supplied to rotation wafer W treatment fluid due to the collision (liquid for the treatment of fluid and wafer W surface From more than two nozzles simultaneously be supplied to wafer W surface in the case of, also due to the mutual collision of liquid), or, centrifuging Thrown away from wafer in the presence of power, so as to disperse as small drop.If the drop to disperse out is attached to chamber Device constituent parts in 20 internal face or chamber 20, then there may be it is described in the background such the problem of.
In order to which the treatment fluid for preventing or at least significantly suppressing to disperse out reaches the internal face of chamber 20, in going back for cup 50 Position in the outer part is provided with mist protector 80.
Mist protector 80 has：Periphery cylinder portion (cylinder portion) 81；And extension 82, it is from the upper end in the periphery cylinder portion 81 Extend on the inside of towards (radial direction) in periphery cylinder portion 81 and stretched out to the top of exhaust cup 51.In the top ends of extension 82 Lower surface is provided with projection 83 prominent downward.
Mist protector 80 is lifted by elevating mechanism 84 (protector elevating mechanism) (reference picture 3) and can be located at three differences Height and position, i.e. high position HG (the 1st protection height) (being represented in fig. 2 with single dotted broken line), (the 2nd protection is high by lower position LG Degree) (being represented in fig. 2 with solid line) and centre position MG (the 3rd protection height) (being represented in fig. 2 with double dot dash line) (also join According to Fig. 4).Elevating mechanism 84 can be made up of as roughly being represented Fig. 3 the cylinder 84a of such as three positions.Mist protector 80 have the bar 84b of the flange part 85 stretched out laterally from periphery cylinder portion 81, the flange part 85 and the cylinder 84a being disposed below Connection, with bar 84b advance and retreat, mist protector 80 lifts.Elevating mechanism 84 can also be by the direct acting machine that is driven by rotation motor Structure or linear motor are formed.In this case, mist protector 80 can be fixed on arbitrary height and position.
Figure 5 illustrates the mist protector 80 positioned at high position HG.Mist protector 80 is to be used for when putting HG positioned at a high position Most effectively prevent from nozzle (SC1 nozzles 411, AS nozzles 412, DHF nozzles 413,1DIW nozzles 414, SC2 nozzles 418, 2DIW nozzles 419 etc.) treatment fluid to be dispersed after the wafer W of rotation from wafer W is supplied to (in Figure 5 with dotted arrow table Show) reach chamber 20 inwall position.The high position HG of mist protector 80 desired height from wafer W rotating speeds, to wafer W Treatment fluid supply conditions (flow etc.) on surface and it is different, therefore, determine to be preferred using experiment.As an example, place The high 60mm of height in surface of the height than wafer W of the topmost of high position HG mist protector 80.In mist protector 80 When high position HG, as shown in Fig. 4 (a), nozzle in foregoing approximated position is (with any of nozzle 411~417 phase It is corresponding.In Fig. 4, it is labelled with mark N referring to the drawings.) ejiction opening (be labelled with Fig. 4 referring to the drawings mark NP) be located at than The low position in the inner circumferential end of the extension 82 of mist protector 80 and, the nozzle arm corresponding with nozzle N (correspond to nozzle arm 421st, 422, any of 423.Mark A referring to the drawings is labelled with Fig. 4.) positioned at the position than extension 82 by the top.This Outside, the high position HG of mist protector 80 appropriate height from wafer W rotating speeds, to the treatment fluid supply conditions in wafer W surface (flow etc.) and it is different, it is therefore preferable that determining high position HG height according to these conditions.
Figure 6 illustrates the mist protector 80 positioned at lower position LG.Lower position LG is under mist protector 80 can be located at Extreme position, this when mist protector 80 extension 82 projection 83 and the upper surface of the extension 512 of exhaust cup 51.Also It is to say, mist protector 80 and the space being vented between the surface facing with each other of cup 51 and the top sky of the wafer W near wafer W Between isolate.In addition, when mist protector 80 is located at lower position LG, the periphery of chamber 20 is in from wafer W superjacent air space direction The flowing (being represented in Figure 5 with solid arrow) of the gas of the exhaust outlet (slit-shaped openings 97 then discussed) in portion will not be by mist Protector 80 hinders.
The centre position MG of mist protector 80 is in the height of the centre between foregoing high position HG and lower position LG. Centrally located MG shown in broken lines mist protector 80 in Fig. 5.In mist 80 centrally located MG of protector, mist protection The extension 82 of part 80 separates with being vented the extension 512 of cup 51 upward (is not located at such journey during high position HG Degree), the treatment fluid that can suppress to disperse from wafer W to a certain degree reaches the inwall of chamber 20.In addition, it is located in mist protector 80 During the MG of centre position, nozzle N (being located at foregoing disconnected position) ejiction opening NP is located at and prevented than mist as shown in Fig. 4 (b) The high position in the inner circumferential end of the extension 82 of guard 80, nozzle N do not interfere with mist protector 80, can cross mist protector 80 Top and moved freely through between the position of the top in wafer W face and above-mentioned position of readiness.
As it was previously stated, each arm drive mechanism (431,432,433) includes elevating mechanism, therefore, make mist protector 80 Nozzle arm (421,422,423) is set to increase to high position HN when the MG of centre position, and corresponding nozzle can have sufficiently (do not interfere apprehensively) with gap in the top of mist protector 80 process.That is, by arm drive mechanism Elevating mechanism is set, and it is high that the centre position MG of mist protector 80 can be set to comparison, can be in mist protector 80 is located at Between position MG when suppress to be fed into wafer W treatment fluid and cross mist protector 80 and disperse.In addition, mist protector 80 can be made The ejiction opening of nozzle when positioned at high position HG and supplying treatment fluid from from nozzle to wafer W sufficiently close to wafer W surface, Splashing of the treatment fluid on wafer W surface can be reduced.
Furthermore it is preferred that make to make during mist 80 centrally located MG of protector nozzle arm (421,422,423) to high position HN The situation of rising as described above, can also persistently be maintained at lower position LN.
As shown in fig. 7, in the periphery cylinder portion 81 of mist protector 80, when mist protector 80 is located at high position from SC2 nozzles 418 and the position passed through of the flight path of liquid that gushes out of 2DIW nozzles 419 formed with logical liquid opening 86.
As shown in Fig. 2 the periphery cylinder portion for housing mist protector 80 is provided with the outside in the periphery cylinder portion 511 of exhaust cup 51 81 cylindric protecting band 90 (mist protector resettlement section).Protecting band 90 by the outer peripheral face in the periphery cylinder portion 511 of exhaust cup 51, Cylindric vertical wall (longitudinal wall) 91 and bottom wall 92 in face of periphery cylinder portion 511, which divide, to be formed.In bottom wall 92, circumferentially Direction equally spaced formed with multiple outlets 93 (only showing 1) in figure 3.Outlet 93 is connected with the (discharge of discharge pipe 94 Pipeline).
It is provided with from the vertical wall 91 for forming protecting band 90 towards general horizontal direction outside to the formation in chamber 20 The lower limit in processing space divide the bottom plate 96 of formation.Bottom plate 96 surrounds the complete cycle of mist protector 80.That is, in bottom plate 96 be provided with the profile slightly larger diameter in the periphery cylinder portion 81 with relative aperture mist protector 80 opening it is (relative with vertical wall 91 Should), mist protector 80 and cup 50 are contained in the opening.Bottom plate 96 extends up to the side wall for reaching chamber 20 from above-mentioned opening Untill 20a.
A part for bottom plate 96 the side wall 20a of chamber 20 front terminal, thus, bottom plate 96 outboard end 96a with Formed with slit-shaped openings 97 (gap) between the side wall 20a of chamber 20.Formed below in bottom plate 96 is used for chamber 20 The exhaust space 98 that the atmosphere in interior space (processing space) is exhausted.Exhaust space 98 by bottom plate 96, chamber 20 side wall The wall bodies such as 20a, bottom wall 20b and the division of vertical wall 91 are formed.
As shown in figure 3, chamber 20 has 4 side wall 20a, each 1 slit-shaped openings are respectively arranged with along 3 therein 97.This 3 slit-shaped openings 97 are connected with 1 general exhaust space 98.It is provided with remaining 1 side wall 20a for inciting somebody to action Therefore wafer W, is not provided with slit-shaped herein relative to the input/output port 24 with shutter 25 of input and output in chamber 20 Opening 97.
As shown in Fig. 2 the bottom wall 20b in face of exhaust space 98 of chamber 20 is provided with exhaust outlet 99.In exhaust outlet 99 It is connected with blast pipe 100 (exhaust line).Converging in blast pipe 100 has discharge pipe 94.In the downstream of point, in blast pipe Mist trap (gas-liquid separation portion) flow control valve such as 101 and disc valve or regulating valve 102 is folded with 100.Blast pipe 100 The pipeline connection (not shown) of factory's gas extraction system of downstream and reduced atmosphere.By entering to the aperture of flow control valve 102 Row regulation, can be adjusted to the degree of the decompression in exhaust space 98 and protecting band 90, as a result, can be to from chamber 20 Interior space introduces the flow of the gas in exhaust space 98 and introduced from the space of wafer W top in protecting band 90 The flow of gas is adjusted.
The upper surface of bottom plate 96 is gently tilted by height with the side wall 20a close to chamber 20 in a manner of step-down.Bottom The upper surface of plate 96 is smooth and flat.As it was previously stated, in the upper surface of bottom plate 96, except being provided with SC2 nozzles 418 and 2DIW Outside the part of nozzle 419 and setting sensor class in need and auxiliary equipment sector of breakdown, essentially without bumps, gas Body can successfully flow near bottom plate 96 towards slit-shaped openings 97.In addition, when safeguarding to being carried out in chamber 20 During cleaning, cleaning fluid successfully flows into exhaust space 98 via slit-shaped openings 97.
As shown in figure 5, positioned at the lower end in the periphery cylinder portion 81 of the mist protector 80 of high position positioned at upper than protecting band 90 End is slightly by the position of top.According to the experiment of inventor, when mist protector 80 is located at high position HG, the drop for the treatment of fluid is almost The lower end with periphery cylinder portion 81 does not collide, the higher position collision of the more than half and mist protector 80 of drop.Therefore, exist The advantages of lower end in periphery cylinder portion 81 is lower than the upper end of protecting band 90 does not almost have.Not equal to by the lower end for making periphery cylinder portion 81 Upper end than protecting band 90 is high, so as to advantage is obtained that：The extension 512 of the extension 82 of mist protector 80 and exhaust cup 51 Between space in atmosphere (gas, mist etc.) successfully flowed into slit-shaped openings 97 or protecting band 90, can be more reliable Ground prevents atmosphere, high humility atmosphere (including mist) from chemical solution to be stranded in wafer W superjacent air spaces.
As shown in figure 8, the upper surface of the extension 512 in exhaust cup 51, sprays the interior table for cleaning mist protector 80 The cleaning fluid in face such as DIW multiple such as 4 remover liquid nozzles 110 (mist protector wiper mechanism) are along extension 512 Circumferencial direction equally spaced configures.One in 4 remover liquid nozzles 110 represents in fig. 8.
When mist protector 80 is located at the lower position LG as lower position, the cleaning fluid next from cleaning solution supply part supply Sprayed from remover liquid nozzle 110 towards the lower surface of the extension 82 of mist protector 80.The lower surface of extension 82 is with going The mode uprised on the inside of toward the radial direction of mist protector 80 tilts, and therefore, sprays next cleaning fluid along extension 82 Advance obliquely upward lower surface.Now, projection 83 and the upper surface of the extension 512 of exhaust cup 51, therefore, cleaning fluid is not It can advance forward than projection 83.Therefore, the cleaning fluid come from the injection of remover liquid nozzle 110 is full of exhaust cup 51 and mist protector 80 Surface facing with each other between space.If the ejection of the cleaning fluid from remover liquid nozzle 110 stops, due to extension 512 upper surface 516 tilts by with going on the inside of radial direction in a manner of uprising, and therefore, cleaning fluid is towards protecting band 90 Flow down.Due to the flowing of above-mentioned cleaning fluid, the surface facing with each other of exhaust cup 51 and mist protector 80 is cleaned.Cleaning fluid Discharge from protecting band 90 via discharge pipe 94, flowed into mist trap 101, via with the sewer pipe that mist trap 101 is connected to Workshop-sink system flows out.
In addition to above-mentioned remover liquid nozzle 110, the automatically inside of Washing cup 50 and neighbouring can be also provided for The remover liquid nozzle of component, but these are not referred in this specification.
Then, an example of the operating sequence of above-mentioned processing unit 16 is illustrated.Following operating sequence is being controlled Be stored under the control of device 4 (control unit) processed the storage part 19 of control device 4 manufacturing process and control program automatically Perform.
First, the arm of base board delivery device 17 is via input/output port 24 and by wafer W into chamber 20 (process container) Input, wafer W are kept by the maintaining part 31 of substrate holding mechanism 30.In the arm of base board delivery device 17 it is withdrawn from chamber Afterwards, shutter 25 is closed.In wafer W input, mist protector 80 is located at lower position.Hereinafter, a system is carried out to wafer W The processing of row.Wherein, illustrate that carrying out DHF mattings, DIW flushings process, SC1 mattings, DIW successively to wafer W rinses Process, IPA displacements process, the situation of drying process.
[DHF mattings]
First, the 2nd nozzle arm 422 is turned round (the arrow M2 of reference picture 3), DHF nozzles 413,1DIW nozzles 414 and IPA Nozzle 415 is located at wafer W central part at the top of lower position LG mist protector 80 ((c) of reference picture 4) Surface ((a) of reference picture 9).Next, mist protector 80 rises and is located at high position HG ((a), Fig. 5 of reference picture 4).Connect Get off, wafer W starts to rotate.Untill wafer W rotation is continued until that a series of processing to wafer W houses always.DHF from DHF nozzles 413 supply to the wafer W of rotation central part.DHF is under the influence of centrifugal force on wafer W surface towards wafer W Periphery flowing, wafer W whole surface covered by DHF liquid film, and wafer W surface is by DHF processing.
The major part of the treatment fluid (being DHF herein) to be dispersed out from wafer W by the 1st rotating cup 53, the 2nd rotating cup 54 it Between and flow obliquely downward.Afterwards, treatment fluid predefines according to the species (acid, alkaline, organic) based on treatment fluid The 1st moveable cup key element 522 and the 2nd moveable cup key element 523 position to any of fluid path 525a, 525b, 525c liquid Body path (entrance open any one) flows into, next, being flowed to any of hydrops portion 522a, 522b, 522c hydrops portion Enter, discarded via any of tapping line 523a, 523b, 523c tapping line to workshop-sink system.In addition, for above-mentioned Treatment fluid flowing, to wafer W surface supply treatment fluid process whole in it is general, therefore, omit from there on Repeat specification in process.
A part for the treatment fluid to be dispersed out from wafer W cross exhaust cup 51 extension 512 top and will be towards chamber The side wall 20a of room 20.The major part of the drop of such treatment fluid and the inner surface of the mist protector 80 positioned at high position collide, And it is captured.Therefore, attachment of the drop for the treatment of fluid to the side wall 20a of chamber 20 is prevented from or is suppressed to Min.. Be caught in mist protector 80 liquid be attached on the inner surface of mist protector 80 or on the inner surface of mist protector 80 because Gravity and flow downwards.
Even if relatively slow, also (it is typically when initial treatment fluid (being DHF herein) is started relative to wafer W supply When base plate processing system 1 generally operates often), clean air handles empty from FFU21 towards the inner space of chamber 20 It is interior to blow out down.The flowing of the clean air is rectified the rectification of plate 22, towards wafer W.
Even if relatively slow, also when initial treatment fluid is started relative to wafer W supply, in exhaust channel 551 via Discharge duct 553 is vented, and thus, the atmosphere of the wafer W superjacent air spaces near wafer W is by the extension 512 from exhaust cup 51 Gap suction (solid arrow of reference picture 5) between the extension 521b of top and discharge opeing cup 52 top.Via blast pipe The extraction flow in road 553 be input to from wafer W into chamber 20 be output untill be maintained always it is constant.Thus, from FFU21 The clean air for being supplied to the space of wafer W top is supplied to, and the atmosphere in the space of wafer W top imports row In gas path 551.Thus, the atmosphere of the wafer W superjacent air spaces near wafer W is maintained at cleaning.
In the present embodiment, fluid path 525a, 525b, 525c is not vented (suction).That is, from wafer The gas that wafer W superjacent air spaces near W flow into cup 50 does not flow into fluid path 525a, 525b, 525c, and to whole Exhaust channel 551 flows into.Fluid path 525a, 525b, 525c cross sectional shape can not possibly be set to mutually the same, fluid path 525a, 525b, 525c flow path resistance are different from each other.The situation of suction is being carried out to fluid path 525a, 525b, 525c Under, using the difference of the flow path resistance as reason, according to the fluid path opened from the wafer W superjacent air spaces near wafer W The flow of the gas flowed into cup 50 is different.In the present embodiment, the problem of such is not produced, the wafer W near wafer W The species for the treatment of fluid of the flowing of gas in superjacent air space with being used in processing is unrelated, is maintained constant.This helps to handle Uniformity raising.
Even if relatively slow, also when initial treatment fluid is started relative to wafer W supply, the inner space of protecting band 90 It is sucked (exhaust) via discharge pipe 94 and blast pipe 100 with exhaust space 98.The exhaust is input to from wafer W into chamber 20 Maintained always untill being output.Using the exhaust, it is present in the side wall of the mist protector 80 and chamber 20 than bottom plate 96 by the top The extension 82 in space and mist protector 80 between 20a and the atmosphere in the space being vented between the extension 512 of cup 51 (reference picture 5 and Fig. 6 in exhaust space 98 are sucked in (gas, mist etc.) suction protecting band 90 or via slit-shaped openings 97 Solid arrow).Thereby, it is possible to prevent the atmosphere of contaminative or high humility to be stranded in above-mentioned space.
The drop flowed downwards by gravity on the inner surface of mist protector 80 drips into protecting band 90, via row Outlet pipe 94 and blast pipe 100 flow, and are discharged from the waste liquid 103 of mist trap 101 to workshop-sink system (not shown).
[DIW rinses process (the 1st time)]
As soon as DHF mattings terminate, mist protector 80 is maintained into high position HG, directly starts to come from 1DIW nozzles 414 DIW ejection, also, stop the ejection of the DHF from DHF nozzles 413 after just starting.Residue in wafer W On DHF and reaction product rinsed by the DIW.
[SC1 mattings]
When being changed from DIW flushings process to SC1 mattings, first, the replacing (nozzle exchange of nozzle arm is initially carried out Operation) ((a)~(c) of reference picture 9).The state for keeping persistently spraying DIW from 1DIW nozzles 414 (is not producing wafer W's Can also reduce ejection flow in the range of the DIW on surface liquid film interruption), reduce mist protector 80 and be located at Between position MG, moreover, make nozzle arm 421,422 rise and be located at high position HN ((b) of reference picture 4).Next, make 1 nozzle arm 421 is turned round, and AS nozzles 412 is located at the surface of wafer W central part.Now, with positioned at the 1st nozzle arm 421 The nozzle of top ends and the nozzle of top ends positioned at the 2nd nozzle arm 422 mode not impinging one another will from SC1 nozzles 411 Risen before reaching the surface of wafer W central part, keep the 1DIW nozzles 414 from the 2nd nozzle arm 422 persistently to spray DIW State, start the 2nd nozzle arm 422 and keep out of the way revolution, the i.e. movement (reference picture 9 towards original position of the 2nd nozzle arm 422 (b)).In addition, reaching the time point a little earlier of the surface of wafer W central part in AS nozzles 412, opened from AS nozzles 412 Beginning DIW ejection.In addition, now, (nitrogen is not supplied to AS nozzles 412 without using two fluid systematic functions of AS nozzles 412 Gas), the ejection for the DIW not being atomized from AS nozzles 412.DIW supply from AS nozzles 412 to wafer W central part After being started, the ejection of the DIW from 1DIW nozzles 414 is stopped.AS nozzles 412 are located at wafer W central part Surface, as soon as 1DIW nozzles 414 return to original position ((c) of reference picture 9), mist protector 80 is set to rise and make its position In high position HG, moreover, making the 2nd nozzle arm 422 be located at lower position LN ((a) of reference picture 4).
By during so making to supply DIW near from AS nozzles 412 to wafer W central parts with from 1DIW nozzles 414 Repeated during nearby supplying DIW to wafer W central parts, can prevent DIW liquid film from partly being disappeared and brilliant from wafer W surface A part for circle W surface is exposed to air atmosphere (watermark, as particulate Producing reason).Reach the effect as possible, The ejection start time of DIW from AS nozzles 412 and the ejection stop timing of the DIW from 1DIW nozzles 414 are any 's.
In addition, in mist 80 centrally located MG of protector, during with positioned at high position HG compared with, mist protector 80 Drop disperse block function reduction.Therefore, in order that the amount of dispersing of the drop from wafer W, height etc. of dispersing are reduced, preferably adopt The rotary speed that taking makes wafer W reduces, and/or subtracts the ejection flow of the DIW from AS nozzles 412 and 1DIW nozzles 414 Few (in the scope that the surface for not producing wafer W exposes), shorten AS nozzles 412 and 1DIW nozzles 414 as far as possible while spray Go out the countermeasures such as DIW time (if colliding on wafer W from the liquid that each nozzle gushes out, being easy to produce splashing).
Next, since SC1 nozzles 411 are to wafer W central parts SC1 supply, make to come from AS after just starting The DIW of nozzle 412 ejection stops.By the time for having predefined SC1 to wafer W supplies, it is clear that SC1 is implemented to wafer W Wash.Now and, the drop of the treatment fluid to be dispersed from wafer W is caught by mist protector 80.Row when implementing SC1 mattings It is identical when pneumatic work is with implementing DHF mattings, therefore, omit repeat specification.
[DIW rinses process (the 2nd time)]
SC1 mattings one terminate, and are maintained for maintaining mist protector 80 high position HG state, start to spray from AS The DIW of mouth 412 ejection, also, after just starting, stop the ejection of the SC1 from SC1 nozzles 411.Residue in crystalline substance SC1 on circle W is rinsed with reaction product by the DIW.
[IPA replaces process]
Process (the 2nd time) is being rinsed to during IPA displacement process conversions from DIW, first, initially, carries out the replacing of nozzle arm. Keep persistently spraying the DIW state (model that can also be interrupted in the DIW on the surface for not producing wafer W liquid film from AS nozzles 412 Reduce in enclosing ejection flow), reduce mist protector 80, and be located at centre position MG, moreover, make nozzle arm 421, 422 rise and are located at high position HN ((b) of reference picture 4).Next, turning round the 2nd nozzle arm 422, spray 1DIW Mouth 414 is located at the surface of wafer W central part.Now, with positioned at the nozzle of the top ends of the 1st nozzle arm 421 and positioned at the 2nd The nozzle of the top ends of nozzle arm 422 mode not impinging one another will reach wafer W central part from 1DIW nozzles 414 Before surface to holding in the state of the AS nozzles 412 of the 1st nozzle arm 421 persistently spray DIW, start nozzle arm 421 Keep out of the way revolution, the i.e. movement ((d) of reference picture 9) towards original position of the 2nd nozzle arm 421.In addition, in 1DIW nozzles 414 reach the time point of the surface of wafer W central part a little earlier, the DIW ejection since 1DIW nozzles 414.In addition, this When, after DIW supply has been started from 1DIW nozzles 414 to wafer W central part, the DIW's from AS nozzles 412 Ejection is stopped.
Then, in the state of Fig. 9 (d), the IPA ejection since IPA nozzles 415, also, after just starting Stop the ejection from the DIW from 1DIW nozzles 414.Ejection with IPA starts simultaneously, or it is later, prevents mist Guard 80 declines, and is located at lower position LG.DIW in wafer W surface is supplied to the IPA displacements come, wafer W table Face is covered by IPA liquid film.
[drying process]
After the 1st nozzle arm 421 returns to original position, the 3rd nozzle arm 423 is turned round, make the 1st nitrogen nozzle 416 Positioned at the surface of wafer W central part.As soon as the 1st nitrogen nozzle 416 sprays close to the surface of wafer W central part from IPA Mouth 415 continues IPA ejection, while makes the 2nd nozzle arm 422 start to move (towards wafer W peripheral part) towards original position. When being located at the surface of wafer W central part in the 1st nitrogen nozzle 416 since the 1st nitrogen nozzle 416 nitrogen ejection.Connect Get off, start the ejection of the nitrogen from the 2nd nitrogen nozzle 417, make the 3rd nozzle arm 423 towards original position (towards wafer W Peripheral part) start mobile ((f) of reference picture 9).
The gyration of 1st nozzle arm 421 and the 3rd nozzle arm 423 is controlled so as to, from IPA nozzles 415 spray IPA with Position of collision in wafer W surface is maintained than the nitrogen sprayed from the 2nd nitrogen nozzle 417 and the collision bit in wafer W surface Rest against the position on the outside of wafer W radial direction.Thus, from the nitrogen that the 2nd nitrogen nozzle 417 gushes out by IPA liquid film edge Wafer periphery direction to push open, gradually extended from central part towards peripheral part in the circular arid region that wafer W surface is formed. It is the time point in the 2nd nitrogen nozzle 417 by wafer W periphery, brilliant after the periphery that IPA nozzles 415 have passed through wafer W Circle W surface whole region is dried.By above step, drying process terminates.Nozzle arm 421,423 returns to respective start bit Put, and it is standby in original position.
In the drying process, mist protector 80 is located at lower position LG.Therefore, from the space of wafer W top towards narrow The flowing of the gas of gap-like opening 97 is not hindered by mist protector 80.Thus, prevent or reduce the DIW to be dispersed out in preceding process Mist or steam be stranded in wafer W top space.Therefore, it is possible to which the space of wafer W top is maintained at into low humidity, energy Enough improve drying efficiency.In addition, even if IPA disperses and is attached to the side wall 20a of chamber 20, the IPA of high volatile is also short Evaporated in time to the external exhaust gas of chamber 20, therefore, harmful effect will not be brought to the atmosphere in chamber 20.
In addition, in a period of drying process is implemented, the order that is illustrated using reference picture 8 before, contraposition Cleaning treatment is carried out in lower position LG mist protector 80, is attached to the chemistry on the surface (face of wafer W sides) of mist protector 80 Solution composition is removed.
After the end of drying process, using with opposite order during input, the wafer W being disposed is by chamber 20 Outside output.
In addition, though above-mentioned operating sequence does not include, following process can also be included in operating sequence：Such as Fig. 7 institutes Show, in the state of mist protector 80 is located at high position HG, supplies SC2 liquid to wafer W central part from SC2 nozzles 418 and enter Row SC2 is cleaned, and afterwards, is supplied DIW to wafer W central part from 2DIW nozzles 419 and is rinsed processing.
According to above-mentioned embodiment, by setting liftable mist protector 80, the mist protector 80 after rising is utilized The chemical solution composition or moisture to disperse is covered, can efficiency prevent well chemical solution composition or attachment of moisture in The internal face or chamber indoor equipment of chamber 20.In addition, mist protector 80 has extension 82, therefore, it is possible to more improve The screening effect stated.In addition, by advance declining mist protector 80, atmosphere gas when for example drying above wafer W Exhaust is not hindered by mist protector 80, therefore, it is possible to improve drying efficiency.
In the above-described embodiment, positioned at high position HG mist protector 80 periphery cylinder portion 81 lower end in protection Outside bag 90, but inside can also be in.In this case, as shown in Figure 10, can be set in the bottom in periphery cylinder portion 81 logical Gas opening 87.Preferably, along mist protector 80 circumferentially extending week of the multiple vent openings 87 along mist protector 80 To setting at spaced intervals.By setting vent openings 87, gas can be made from the space of the wafer side of mist protector 80 to chamber The side wall 20a of room 20 is passed through and flowed into slit-shaped openings 97.
In the above-described embodiment, exhaust cup 51 is the motionless cup inscape for the most peripheral for forming cup 50, but simultaneously It is not limited to this.Can also be got rid of from cup 50 exhaust cup 51, by discharge opeing cup 52 be set to form cup 50 most peripheral it is motionless Cup inscape.In this case, mist protector is provided with a manner of adjacent with discharge opeing cup 52 in the outside of discharge opeing cup 52 80.In Fig. 4, the position relationship between the discharge opeing cup 52 and mist protector 80 of the situation can be by will be vented the row of being regarded as of cup 51 Liquid cup (52) understands.In addition, in this case, form such as tapping line 523a, 523b, 523c pipe arrangement and factory and be vented System (or the aspirator such as suction pump or injector) connects and also has the function that to be used as exhaust line.In this case, Exhaust line is provided with the gas-liquid separation devices such as mist trap, by the liquid that mist trap separates by such as workshop-sink System is discarded.
Reference picture 11 and the other embodiment of the cleaning treatment of mist protector 80 is illustrated.In fig. 11, for With 1~Figure 10 of reference picture and the component identical component that has been described above, same reference numerals are marked, omit repeat specification.
Mist protector 80A shown in Figure 11 is for the mist protector 80 shown in Fig. 8 in the following table in extension 82 It is different that face is provided with gap forming portion 823 (part protruded downwards) of ring-type (annular shape) this point.Gap forming portion 823 from The inner peripheral surface in mist protector 80A periphery cylinder portion 81 extends towards radial direction inner side.By setting the gap forming portion 823, Clearance G 1 between the upper surface of the extension 512 of the lower surface of the gap forming portion 823 exhaust cup 51 relative with its compares The mist protector 80A part (than clearance G 1 by the part on the inside of radial direction) for being not provided with gap forming portion 823 with it Clearance G 2 between the upper surface of the extension 512 of relative exhaust cup 51 is narrow.
The big degree that can be extended to the cleaning fluid then discussed to the whole region of clearance G 1 of the size of clearance G 1, so And be preferably set to it is small be not easy the degree that is flowed out from clearance G 1 to cleaning fluid as value, such as 0.1mm~0.5mm degree.
Gap forming portion 823 circumferentially continuously extends on the complete cycle of mist protector 80A extension 82. The lower surface of gap forming portion 823 from remover liquid nozzle 110 formed with for will supply what the cleaning fluid come guided to clearance G 2 Multiple radial slots 824.The groove bottom (upper surface of groove) of radial slot 824 is the same as the extension 512 of exhaust cup 51 corresponding thereto Gap-ratio clearance G 1 between upper surface is wide.Radial slot 824 connects towards extension on the inside of radial direction with clearance G 2.Radial slot 824 are provided with and the identical quantity of remover liquid nozzle 110.Remover liquid nozzle 110 is arranged in the position relative with radial slot 824 Extension 512, it is radially oriented groove 824 and supplies cleaning fluid.Strictly speaking radial slot 824 need not radially extend, can also phase For radially angularly extending.
In the lower surface of the gap forming portion 823 of ring-type, formed with circumferentially on mist protector 80A complete cycle The circumferential groove (circumferential slot) 825 of extension.The circumferential groove 825 and the radial slot 824 of whole intersect, and connect with the radial slot 824 of whole It is logical.The radial direction position of circumferential groove 825 is located at than remover liquid nozzle 110 by the position on the inside of radial direction.
Below to be provided with gap forming portion 823, radial slot 824, circumferential groove 825 effect illustrate.
Mist protector 80A is located at foregoing lower position LG as shown in Figure 11, make from remover liquid nozzle 110 as clear The DIW of washing lotion sprays.Flowed from the cleaning fluid that each remover liquid nozzle 110 gushes out via corresponding radial slot 824 into clearance G 2 Enter.
Now, what the flow-rate ratio of the cleaning fluid sprayed from remover liquid nozzle 110 flowed out via clearance G 1 into protecting band 90 The flow of cleaning fluid is big.Therefore, it is possible to which clearance G 2 is full of on complete cycle with cleaning fluid.Now, stretching positioned at mist protector 80A Go out lower surface and the upper surface of the extension 512 of exhaust cup 51 of the projection 83 at the inner circumferential end in portion 82, therefore, cleaning fluid is several Do not spilt between the lower surface of projection 83 and the upper surface of extension 512.Between being equably full of with cleaning fluid Circumferential whole region in gap G2.
The lower surface of projection 83 can not also be with the upper surface of extension 512.In this case, from remover liquid nozzle The flow of cleaning fluid that the flow-rate ratio of 110 cleaning fluids sprayed flows out via from clearance G 1 to protecting band 90 and from raised 83 with stretching Go out the total more of the flow of the cleaning fluid of the outflow of the gap between the upper surface in portion 512.
The cleaning fluid of flowing is also flowed into circumferential groove 825 and circumferentially spread in radial slot 824.If gap G2, radial slot 824 and circumferential groove 825 are cleaned liquid and are full of, then carry out diffusion of the cleaning fluid into narrower clearance G 1.Mist protects The whole region in the space between the lower surface of part 80A extension 82 and the upper surface of the extension 512 of exhaust cup 51 is (between i.e. Gap G1+G2) cleaned liquid is full of.It is attached to the chemical solution of the lower surface of extension 82 and the upper surface of extension 512 and anti- The attachments such as product are answered to dissolve in the cleaning fluid.The attachment for being added to cleaning fluid is arranged together with cleaning fluid into protecting band 90 Go out.Consequently, it is possible to mist protector 80A surface (face of wafer W sides) can be cleaned.
Afterwards, if rising mist protector 80A, lower surface and the exhaust cup of the extension 82 in mist protector 80A Upper surface of the cleaning fluid in the space between the upper surface of 51 extension 512 along the extension 512 as inclined plane flows into In protecting band 90.By above step, cleaning terminates.Above-mentioned cleaning operation can also be repeated.
Above-mentioned structure in Figure 11 embodiment, it is full of mist protector with can not omitted with cleaning fluid Space between the lower surface of 80A extension 82 and the upper surface of the extension 512 of exhaust cup 51, can equably clean and stretch Go out the whole region in the cleaning object face of the lower surface in portion 82 and the upper surface of extension 512.
In the above-described embodiment, in gap forming portion 823 formed with radial slot 824, but can also there is no radial slot 824.In this case, as shown in figure 12, remover liquid nozzle 110B leans on radius in the gap forming portion 823B than mist protector 80B Position on the inside of direction is arranged at the extension 512 of exhaust cup 51., can due to the cleaning fluid supplied from remover liquid nozzle 110B Clearance G 2 is full of with cleaning fluid on complete cycle.In addition, between the lower surface of gap forming portion 823 and the upper surface of extension 512 Clearance G 1 can be also full of on complete cycle with cleaning fluid.The attachment of cleaning fluid is added to together with cleaning fluid to protecting band Discharged in 90B.Consequently, it is possible to mist protector 80B surface (face of wafer W sides) can be cleaned.
Cover 60 is provided with the SC2 nozzles 418 shown in Figure 11 around fixed nozzle.Cover 60 is fixed in bottom plate 96. In the front 61 towards that side of mist protector 80A of cover 60 formed with opening 62.It can be covered via the opening 62 from quilt cover 60 The SC2 nozzles 418 being covered with spray SC2 liquid (treatment fluid) towards wafer W.
Topmost in mist protector 80A periphery cylinder portion is that the most peripheral portion of the upper surface of extension 82 is provided with masking Component 88.The component inseparable with one that both can be mist protector 80A of shading member 88 or with mist protector 80A is fixed to mist protector 80A component after being separately manufactured.When mist protector 80A is located at lower position LG, structure is covered Part 88 and the front 61 of cover 60 without formed be open 62 narrower (such as 1mm~2mm degree) gap 63 of spaced-apart It is and relative with the part.
Gas is difficult to flow to narrower gap 63.Therefore, it is possible to stop in the ejection of the SC2 liquid from SC2 nozzles 418 When be stranded in the SC2 liquid (treatment fluid) near the ejiction opening of SC2 nozzles 418 steam spread into chamber 20 and from SC2 spray (due to being fixed nozzle, therefore, ejection flow when emulation distributes is considerably less) prevents SC2 liquid when mouth 418 carries out emulation distribution The steam of (treatment fluid) spreads into chamber 20.
Cover 60 and the integration of shading member 88 can also be made.In this case, cover 60 and shading member 88 and mist protector 80A is lifted in linkage.In addition, in this case, without in order to prevent cover 60 and shading member in mist protector 80A lifting 88 interference and the gap 63 set.Therefore, it is possible to be more reliably prevented from preventing the steam of SC2 liquid (treatment fluid) into chamber 20 Diffusion.
Aqueduct 64 (liquid guiding elements) is provided with below the ejiction opening of SC2 nozzles 418.From the ejection of SC2 nozzles 418 The SC2 liquid of mouth drippage is flowed into protecting band 90 via aqueduct 64.Therefore, it is possible to prevent that bottom plate 96 from being dripped from SC2 nozzles 418 SC2 liquid pollutes or dropped onto the SC2 evaporations of bottom plate 96 and spread into chamber 20.
In the respective embodiments described above, the substrate of process object is semiconductor crystal wafer, but be not limited to this or Other substrates, such as the glass substrate, ceramic substrate of liquid crystal display.

Claims (20)

1. a kind of substrate board treatment, wherein, the substrate board treatment possesses：
Board holder, it keeps substrate；
At least one handles nozzle for liquid, and it sprays treatment fluid to the substrate for remaining to the board holder；
Process container, it houses the board holder and the processing nozzle for liquid；
Fixed cup, it is configured at around the board holder, and the fixation cup receives to be fed at least place of substrate The mist of liquid or treatment fluid is managed, and it is relatively motionless relative to the process container；
Mist protector, it is arranged at the outside of the fixed cup in a manner of surrounding the fixed cup, the mist protector pair The liquid crossed the top of the fixed cup and dispersed outward is blocked；And
Protector elevating mechanism, it makes the mist protector anti-to the 1st protection height and the highly lower than the described 1st protection the 2nd Protect lift in height,
The mist protector has：The cylinder portion of tubular；And extension, its from the top of cartridge towards cartridge in Side and to the fixed cup top stretch out.
2. substrate board treatment according to claim 1, wherein,
The substrate board treatment is also equipped with control unit, and the control unit is controlled to the protector elevating mechanism, so as to from The processing nozzle for liquid makes the mist protector be located at institute when supplying treatment fluid to the substrate that remain by the board holder The 1st protection height is stated, the mist protector is made when making the drying substrates positioned at the described 2nd protection height.
3. substrate board treatment according to claim 2, it is characterised in that
When the mist protector is positioned at the described 1st protection height, formed between the mist protector and the fixed cup Air-flow, when the mist protector is positioned at the described 2nd protection height, air-flow is formed in the top of the mist protector.
4. the substrate board treatment according to claim 1 or 3, wherein,
It is provided with the outside of the mist protector：Bottom plate, the bottom in its processing space delimited in the process container；And Exhaust outlet, its outboard exhaust by the atmosphere gas in the processing space to the processing space.
5. substrate board treatment according to claim 4, wherein,
The bottom plate extends to the side wall of the process container, and the upper surface of the bottom plate is with the height with the close side wall The mode of step-down tilts.
6. substrate board treatment according to claim 1, wherein,
The substrate board treatment is provided with the 1st processing nozzle for liquid and the 2nd processing nozzle for liquid as the processing nozzle for liquid,
The substrate board treatment is also equipped with：1st nozzle arm, it keeps the 1st processing nozzle for liquid and makes the 1st treatment fluid Nozzle moves；2nd nozzle arm, it keeps the 2nd processing nozzle for liquid and makes the 2nd processing nozzle for liquid movement；And control Portion, its action to the substrate board treatment are controlled,
The control unit make when carrying out the operation of following nozzle exchange the mist protector positioned at the described 1st protection height with it is described 3rd protection height of the centre of the 2nd protection height：2nd nozzle arm is driven and make it is described 2nd processing nozzle for liquid from The position of the foreign side for the substrate that remain from the board holder is advanced to the position of the top of the substrate, and to described 1st nozzle arm is driven and makes the 1st processing nozzle for liquid from the position of the top of the substrate to the foreign side of the substrate Position keep out of the way.
7. substrate board treatment according to claim 6, wherein,
The substrate board treatment possesses：1st arm elevating mechanism, its make the 1st nozzle arm the 1st arm height with than the described 1st Lifted between the 2nd highly low arm height of arm；And
2nd arm elevating mechanism, it makes the 2nd nozzle arm in the 3rd arm height and the 4th arm height highly lower than the 3rd arm Between lift,
The control unit is controlled to the 1st arm elevating mechanism when carrying out the nozzle exchange operation and makes the described 1st Nozzle arm is located at the 1st arm height, and the 2nd arm elevating mechanism is controlled and makes the 2nd nozzle arm positioned at described 3rd arm height.
8. substrate board treatment according to claim 6, wherein,
The substrate board treatment is also equipped with the rotating mechanism for rotating the substrate for remaining to the board holder,
The control unit is controlled when carrying out the nozzle exchange operation to the rotating mechanism, is carrying out the nozzle more Change before operation make described in the rotating ratio of substrate the 1st processing nozzle for liquid by treatment fluid to substrate sprays when rotating speed reduction.
9. substrate board treatment according to claim 1, wherein,
The substrate board treatment is also equipped with the outer substrate supply for laterally remaining to the board holder from the mist protector The fixed nozzle for the treatment of fluid, it is located at institute in the mist protector formed with logical liquid opening, the logical liquid opening in the mist protector Allow to reach substrate from the treatment fluid that the fixed nozzle gushes out by the mist protector when stating the 1st protection height.
10. substrate board treatment according to claim 1, wherein,
The substrate board treatment is also equipped with：
Mist protector resettlement section, it houses the cartridge of the mist protector；And
Discharge unit, it will be flowed into the liquid of the inside of the mist protector resettlement section or gas discharge.
11. substrate board treatment according to claim 1, wherein,
The substrate board treatment is also equipped with the cleaning machine cleaned to the face of the direction fixed cup of the mist protector Structure.
12. substrate board treatment according to claim 1, wherein,
The fixed cup has the inclination upper table of the central part side extension towards the substrate that remain by the board holder Face, the inclined upper surface tilt in a manner of height close to the central part of the substrate with uprising, the inclined upper surface Contacted with the tip portion of the extension of the mist protector positioned at the described 2nd protection height, thus, in face of the mist The space in the face of the side of the direction fixed cup of protector and the top of substrate that is remain by the board holder Space isolates.
13. substrate board treatment according to claim 11, wherein,
The wiper mechanism carries out the mist when the mist protector is positioned at the described 2nd protection height by supplying cleaning fluid The cleaning of protector.
14. substrate board treatment according to claim 13, wherein,
The fixed cup has：The cylinder portion of tubular；And extension, its from the top of cartridge towards cartridge in Side is stretched out,
The mist protector the extension lower surface formed with gap forming portion, the gap forming portion is between described Formed with the 1st gap between the upper surface of the extension of the lower surface of gap forming portion and the fixed cup, in the mist Protector without the gap forming portion part and the fixed cup the extension upper surface between formed with 2nd gap,
The wiper mechanism has the remover liquid nozzle that cleaning fluid is supplied to the 2nd gap.
15. substrate board treatment according to claim 14, wherein,
The gap forming portion extends on the complete cycle of the extension of the mist protector,
The lower surface of the gap forming portion formed with：Radial slot, it extends along radial direction；And circumferential groove, its with Radial slot intersects, and circumferentially extends,
The remover liquid nozzle is arranged at the fixed cup in the position relative with the radial slot, and the circumferential groove is arranged at On the inside of the radial direction of the remover liquid nozzle.
16. substrate board treatment according to claim 1, wherein,
The fixed cup has in the radial outside of the fixed cup to be formed relative to the motionless cup of the fixed cup Key element, the space between the fixed cup and the cup inscape are vented.
17. substrate board treatment according to claim 4, wherein,
When the mist protector is positioned at the described 1st protection height, the lower end of the cartridge of the mist protector is located at than institute State the high position in the upper surface of bottom plate.
18. a kind of substrate processing method using same, substrate board treatment, substrate board treatment tool are used in the substrate processing method using same It is standby：
Board holder, it keeps substrate；
At least one handles nozzle for liquid, and it sprays treatment fluid to the upper surface for the substrate for remaining to the board holder；
Process container, it houses the board holder and the processing nozzle for liquid；
Fixed cup, it is configured at around the board holder, and the fixation cup receives to be fed into the treatment fluid of substrate Or the mist for the treatment of fluid, and it is relatively motionless relative to the process container；
Mist protector, it is arranged at the outside of the fixed cup in a manner of surrounding the fixed cup, the mist protector pair The liquid crossed the top of the fixed cup and dispersed outward is blocked；And
Protector elevating mechanism, it lifts the mist protector,
The mist protector has：The cylinder portion of tubular；And extension, it is from the upper end of cartridge towards the fixed cup Side is stretched out,
The substrate processing method using same includes following process：
Kept making the mist protector in the state of the 1st protection height from the processing nozzle for liquid to by the substrate The substrate supply treatment fluid that portion remains；And
In the state of the mist protector is located at the 2nd protection height highly lower than the described 1st protection, do the substrate It is dry.
19. substrate processing method using same according to claim 18, wherein,
It is provided with the 1st processing nozzle for liquid and the 2nd processing nozzle for liquid also has as the processing nozzle for liquid, the substrate board treatment It is standby：1st nozzle arm, it keeps the 1st processing nozzle for liquid and makes the 1st processing nozzle for liquid movement；And the 2nd nozzle arm, It keeps the 2nd processing nozzle for liquid and makes the 2nd processing nozzle for liquid movement,
The substrate processing method using same includes following process as the process that treatment fluid is supplied to the substrate：Make at the described 2nd In the state of reason nozzle for liquid has been kept out of the way above the substrate, from the 1st treatment fluid spray positioned at the top of the substrate Mouth supplies treatment fluid to the substrate；And in the state for making the 1st processing nozzle for liquid keep out of the way above the substrate Under, treatment fluid is supplied to the substrate from the 2nd processing nozzle for liquid positioned at the top of the substrate,
Make the mist protector high positioned at the described 1st protection height and the described 2nd protection when carrying out following nozzle exchange operation 3rd protection height of the centre of degree：Make the foreign side of the 2nd processing nozzle for liquid from the substrate that remain by the board holder Position advance to the position of the top of the substrate, and make the 1st processing nozzle for liquid from the position of the top of the substrate Put to the position of the foreign side of the substrate and keep out of the way.
20. a kind of storage medium, it stores computer program, wherein, the computer program is being configured processing substrate dress When the computer for the control device put performs, action of the computer to the substrate board treatment is controlled and makes right It is required that the substrate processing method using same described in 18 performs.
CN201680044518.2A 2015-07-29 2016-07-28 Substrate processing apparatus, substrate processing method, and storage medium Active CN107851572B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2015-149916 2015-07-29
JP2015149916 2015-07-29
JP2016122690A JP6740028B2 (en) 2015-07-29 2016-06-21 Substrate processing apparatus, substrate processing method and storage medium
JP2016-122690 2016-06-21
PCT/JP2016/072157 WO2017018481A1 (en) 2015-07-29 2016-07-28 Substrate processing device, substrate processing method, and storage medium

Publications (2)

Publication Number Publication Date
CN107851572A true CN107851572A (en) 2018-03-27
CN107851572B CN107851572B (en) 2022-02-18

Family

ID=57884517

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680044518.2A Active CN107851572B (en) 2015-07-29 2016-07-28 Substrate processing apparatus, substrate processing method, and storage medium

Country Status (2)

Country Link
CN (1) CN107851572B (en)
WO (1) WO2017018481A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111451902A (en) * 2019-01-21 2020-07-28 株式会社迪思科 Processing device
CN112768378A (en) * 2020-12-31 2021-05-07 上海至纯洁净系统科技股份有限公司 Staggered wafer surface wet cleaning system and cleaning method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6890992B2 (en) * 2017-02-10 2021-06-18 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing equipment and substrate processing method
JP7197376B2 (en) * 2019-01-17 2022-12-27 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090090391A1 (en) * 2004-08-30 2009-04-09 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method
CN101551602A (en) * 2008-04-03 2009-10-07 东京毅力科创株式会社 Substrate cleaning method and substrate cleaning apparatus
CN102078850A (en) * 2009-10-16 2011-06-01 东京毅力科创株式会社 Liquid processing apparatus, liquid processing method and storage medium
KR20130056185A (en) * 2011-11-21 2013-05-29 도쿄엘렉트론가부시키가이샤 Liquid processing apparatus and liquid processing method
JP2013187395A (en) * 2012-03-08 2013-09-19 Dainippon Screen Mfg Co Ltd Substrate processing apparatus and substrate processing method
US20140144465A1 (en) * 2012-11-26 2014-05-29 Tokyo Electron Limited Substrate cleaning system, substrate cleaning method and memory medium
KR20140113339A (en) * 2013-03-15 2014-09-24 다이니폰 스크린 세이조우 가부시키가이샤 Substrate processing apparatus
JP2015056431A (en) * 2013-09-10 2015-03-23 東京エレクトロン株式会社 Substrate processing system, substrate processing method and computer readable storage medium storing substrate processing program
CN104505354A (en) * 2013-08-08 2015-04-08 斯克林集团公司 Substrate Processing Apparatus And Substrate Processing Method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008159871A (en) * 2006-12-25 2008-07-10 Dainippon Screen Mfg Co Ltd Substrate processing apparatus and substrate processing method
JP4901650B2 (en) * 2007-08-31 2012-03-21 東京エレクトロン株式会社 Liquid processing apparatus, liquid processing method, and storage medium
JP2010232528A (en) * 2009-03-27 2010-10-14 Pre-Tech Co Ltd Single wafer cleaning apparatus
JP5941023B2 (en) * 2013-08-21 2016-06-29 東京エレクトロン株式会社 Substrate cleaning apparatus, substrate cleaning method, and computer-readable recording medium

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090090391A1 (en) * 2004-08-30 2009-04-09 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method
CN101551602A (en) * 2008-04-03 2009-10-07 东京毅力科创株式会社 Substrate cleaning method and substrate cleaning apparatus
CN102078850A (en) * 2009-10-16 2011-06-01 东京毅力科创株式会社 Liquid processing apparatus, liquid processing method and storage medium
KR20130056185A (en) * 2011-11-21 2013-05-29 도쿄엘렉트론가부시키가이샤 Liquid processing apparatus and liquid processing method
JP2013187395A (en) * 2012-03-08 2013-09-19 Dainippon Screen Mfg Co Ltd Substrate processing apparatus and substrate processing method
US20140144465A1 (en) * 2012-11-26 2014-05-29 Tokyo Electron Limited Substrate cleaning system, substrate cleaning method and memory medium
KR20140113339A (en) * 2013-03-15 2014-09-24 다이니폰 스크린 세이조우 가부시키가이샤 Substrate processing apparatus
CN104505354A (en) * 2013-08-08 2015-04-08 斯克林集团公司 Substrate Processing Apparatus And Substrate Processing Method
JP2015056431A (en) * 2013-09-10 2015-03-23 東京エレクトロン株式会社 Substrate processing system, substrate processing method and computer readable storage medium storing substrate processing program

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111451902A (en) * 2019-01-21 2020-07-28 株式会社迪思科 Processing device
CN111451902B (en) * 2019-01-21 2023-08-15 株式会社迪思科 Processing device
CN112768378A (en) * 2020-12-31 2021-05-07 上海至纯洁净系统科技股份有限公司 Staggered wafer surface wet cleaning system and cleaning method

Also Published As

Publication number Publication date
WO2017018481A1 (en) 2017-02-02
CN107851572B (en) 2022-02-18

Similar Documents

Publication Publication Date Title
JP6740028B2 (en) Substrate processing apparatus, substrate processing method and storage medium
US7275553B2 (en) Liquid processing apparatus and liquid processing method
KR102342131B1 (en) Substrate treatment apparatus, and substrate treatment method
KR101039765B1 (en) Device and method for wet treating disc-shaped articles
KR101949722B1 (en) Substrate processing apparatus, substrate processing method and storage medium
US9768039B2 (en) Substrate processing apparatus
CN107851572A (en) Substrate board treatment, substrate processing method using same and storage medium
JP6090113B2 (en) Liquid processing equipment
CN104051305A (en) Substrate processing apparatus
US9691602B2 (en) Liquid process apparatus and liquid process method
KR20140052849A (en) Substrate processing apparatus and substrate processing method
TWI641035B (en) Substrate processing apparatus
TWI517209B (en) Liquid treatment device
US20180085795A1 (en) Recovery piping cleaning method and substrate processing apparatus
TWI687971B (en) Substrate processing device and substrate processing method
KR102652667B1 (en) Substrate processing apparatus and substrate processing method
US10290518B2 (en) Substrate liquid processing apparatus
KR101750133B1 (en) Liquid processing apparatus
CN107527839A (en) Substrate board treatment, the cleaning method of substrate board treatment and storage medium
JP6432824B2 (en) Substrate processing equipment
KR102325059B1 (en) Apparatus for treating a substrate and method for threating a substrate
KR101570167B1 (en) Substrate processing apparatus
JP3594416B2 (en) Rotary substrate processing equipment

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant