CN112575382B - 一种微流控高分子聚合物单晶薄膜及其制备方法 - Google Patents
一种微流控高分子聚合物单晶薄膜及其制备方法 Download PDFInfo
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- CN112575382B CN112575382B CN202011421350.7A CN202011421350A CN112575382B CN 112575382 B CN112575382 B CN 112575382B CN 202011421350 A CN202011421350 A CN 202011421350A CN 112575382 B CN112575382 B CN 112575382B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/54—Organic compounds
- C30B29/58—Macromolecular compounds
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
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CN202011421350.7A CN112575382B (zh) | 2020-12-08 | 2020-12-08 | 一种微流控高分子聚合物单晶薄膜及其制备方法 |
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CN114318546A (zh) * | 2021-12-13 | 2022-04-12 | 国科广化精细化工孵化器(南雄)有限公司 | 一种利用微流控技术的有机晶体薄膜的外延生长方法及有机晶体薄膜与应用 |
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CN2285301Y (zh) * | 1996-12-31 | 1998-07-01 | 中国科学院长春应用化学研究所 | 立式喷雾化学沉积装置 |
JP3137953B2 (ja) * | 1999-03-30 | 2001-02-26 | 科学技術振興事業団 | エレクトロスプレー質量分析方法及びその装置 |
CN101073137A (zh) * | 2004-03-30 | 2007-11-14 | 普渡研究基金会 | 用于解吸电喷雾离子化的方法和系统 |
CN104966659A (zh) * | 2006-12-28 | 2015-10-07 | 东华理工学院 | 质谱仪离子源及原样样品中痕量成分的质谱分析方法 |
CN103043601B (zh) * | 2013-01-04 | 2016-02-10 | 上海交通大学 | 一种基片强适应性纳米材料均匀成膜方法及其装置 |
CN105819508B (zh) * | 2016-03-15 | 2018-07-03 | 中国科学院广州能源研究所 | 一种喷雾热解法制备vo2(m)纳米粉体及薄膜的方法 |
CN110240721B (zh) * | 2019-06-20 | 2022-03-25 | 江西科技师范大学 | 一种π-共轭单体有机聚合物薄膜的制备方法 |
CN111999372A (zh) * | 2020-07-09 | 2020-11-27 | 山东师范大学 | 可高通量筛选喹喔啉衍生物合成条件的微液滴电喷雾装置及方法 |
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Address after: 512400 No.3, Ping'an 1st Road, Zhuji Industrial Park, Nanxiong City, Shaoguan City, Guangdong Province Patentee after: Shaoguan Institute of new materials Patentee after: Guoke Guanghua fine chemical incubator (Nanxiong) Co.,Ltd. Patentee after: GUANGZHOU CHEMISTRY Co.,Ltd. CHINESE ACADEMY OF SCIENCES Patentee after: Guoke Guanghua (Nanxiong) New Materials Research Institute Co.,Ltd. Address before: 512400 No.3, Ping'an 1st Road, Zhuji Industrial Park, Nanxiong City, Shaoguan City, Guangdong Province Patentee before: GUANGZHOU CHEMICAL INSTITUTE SHAOGUAN TECHNOLOGY INNOVATION AND BREEDING CENTER, CHINESE ACADEMY OF SCIENCES Patentee before: NANXIONG CAS INCUBATOR OPERATION CO.,LTD. Patentee before: GUANGZHOU CHEMISTRY Co.,Ltd. CHINESE ACADEMY OF SCIENCES Patentee before: Guoke Guanghua (Nanxiong) New Materials Research Institute Co.,Ltd. |
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