CN112563210A - 一种逆导模块 - Google Patents

一种逆导模块 Download PDF

Info

Publication number
CN112563210A
CN112563210A CN202011440315.XA CN202011440315A CN112563210A CN 112563210 A CN112563210 A CN 112563210A CN 202011440315 A CN202011440315 A CN 202011440315A CN 112563210 A CN112563210 A CN 112563210A
Authority
CN
China
Prior art keywords
tube core
casing
plate
cathode electrode
reverse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202011440315.XA
Other languages
English (en)
Inventor
刘胜弟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZHEJIANG HUAJING RECTIFIER CO LTD
Original Assignee
ZHEJIANG HUAJING RECTIFIER CO LTD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ZHEJIANG HUAJING RECTIFIER CO LTD filed Critical ZHEJIANG HUAJING RECTIFIER CO LTD
Priority to CN202011440315.XA priority Critical patent/CN112563210A/zh
Publication of CN112563210A publication Critical patent/CN112563210A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16FSPRINGS; SHOCK-ABSORBERS; MEANS FOR DAMPING VIBRATION
    • F16F15/00Suppression of vibrations in systems; Means or arrangements for avoiding or reducing out-of-balance forces, e.g. due to motion
    • F16F15/02Suppression of vibrations of non-rotating, e.g. reciprocating systems; Suppression of vibrations of rotating systems by use of members not moving with the rotating systems
    • F16F15/04Suppression of vibrations of non-rotating, e.g. reciprocating systems; Suppression of vibrations of rotating systems by use of members not moving with the rotating systems using elastic means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/06Containers; Seals characterised by the material of the container or its electrical properties
    • H01L23/08Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/10Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15Ceramic or glass substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/16Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/32Holders for supporting the complete device in operation, i.e. detachable fixtures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3672Foil-like cooling fins or heat sinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731Ceramic materials or glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736Metallic materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/564Details not otherwise provided for, e.g. protection against moisture

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Aviation & Aerospace Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Dispersion Chemistry (AREA)
  • Thyristors (AREA)

Abstract

一种逆导模块,包括壳体、壳体上盖、壳体底板和若干个逆导组件,所述逆导组件包括管芯,所述管芯为一只晶闸管和一只快速整流管反并联封装,所述逆导组件还包括位于所述管芯上方的阴极电极柱,阴极电极柱上端穿出壳体上盖,所述阴极电极柱上套有绝缘套管,所述阴极电极柱与绝缘套管的下端分别具有第一凸缘和第二凸缘,所述绝缘套管上套有碟簧,所述碟簧上端设有压板,压板与壳体底板之间通过第一螺钉进行固定连接,所述管芯上部与阴极电极柱下端之间设有管芯压块,所述管芯下部设有公共极板,所述公共极板与壳体底板之间设有陶瓷垫片。本发明可以替代逆导晶闸管(RCT),大幅降低直流斩波装置和各种逆变器的成本。

Description

一种逆导模块
技术领域
本发明涉及逆变电路设计领域,尤其涉及一种逆导模块。
背景技术
逆导晶闸管RCT(Reverse-ConductingThyristir)亦称反向导通晶闸管。其特点是在晶闸管的阳极与阴极之间反向并联一只二极管,使阳极与阴极的发射结均呈短路状态。由于这种特殊电路结构,使之具有耐高压、耐高温、关断时间短、通态电压低等优良性能。例如,逆导晶闸管的关断时间仅几微秒,工作频率达几十千赫,优于快速晶闸管(FSCR)。该器件适用于开关电源、UPS不间断电源中,一只RCT即可代替晶闸管和续流二极管各一只,不仅使用方便,而且能简化电路设计。逆导晶闸管的典型产品有美国无线电公司(RCA)生产的S3900MF。它采用TO-220封装,三个引出端分别是门极G、阳极A、阴极K。S3900MF由于其封装结构限制,通态平均电流小,而且散热能力差,不适合应用于地铁、动车、城市无轨电车、工矿电力机车的大功率直流斩波装置中和各种逆变电路中。国外开发有与逆导晶闸管RCT同类的产品器件,而国内缺少同类型的器件,并且开发同类型器件的资金投资非常大,投资周期长,市场上急需替代这种器件的产品。
发明内容
本发明要解决上述现有技术存在的问题,提供一种逆导模块,结构简单,绝缘性能好而且对芯片的固定牢靠。
本发明解决其技术问题采用的技术方案:一种逆导模块,包括壳体、壳体上盖、壳体底板和若干个逆导组件,所述逆导组件包括管芯,所述管芯为一只晶闸管和一只快速整流管反并联封装,所述逆导组件还包括位于所述管芯上方的阴极电极柱,阴极电极柱上端穿出壳体上盖,所述阴极电极柱上套有绝缘套管,所述阴极电极柱与绝缘套管的下端分别具有第一凸缘和第二凸缘,所述绝缘套管上套有碟簧,所述碟簧上端设有压板,压板与壳体底板之间通过第一螺钉进行固定连接,所述碟簧下端与第二凸缘的上端之间设有垫圈,所述管芯设置在壳体底板上方,所述管芯上部与阴极电极柱下端之间设有管芯压块,所述管芯下部设有公共极板,所述公共极板与壳体底板之间设有陶瓷垫片,所述第一凸缘和第二凸缘之间设有连接板,所述连接板上设有阴极引线片,阴极引线片与所述晶闸管的阴极连接,所述管芯上设有门极引线组件,门极引线组件与所述晶闸管的门极连接,所述壳体的左右两边分别设有阳极电极柱和端子座,所述公共极板连接所述晶闸管的阳极与所述阳极电极柱,所述端子座上设有若干对的控制端子,控制端子所述阴极引线片和门极引线组件通过连接导线分别连接到一对所述控制端子上。
为了进一步完善,所述管芯压块下侧设有引线槽,引线槽一端与管芯压块侧壁连通,所述门极引线组件位于所述引线槽内。
进一步完善,所述壳体上盖与压板通过成对的第二螺钉进行固定连接,成对所述第二螺钉分别位于阴极电极柱的前后两侧。
进一步完善,所述公共极板的左端设有竖板,竖板与壳体的内壁贴合,竖板上端设有与阳极电极柱相连接的连接极板。
进一步完善,所述压板上侧设有绝缘垫片。
进一步完善,所述压板上设有与绝缘套管间隙配合的限位孔。
进一步完善,所述阴极引线片夹在第一凸缘与连接板之间。
进一步完善,所述壳体的底部设有固定部,固定部上侧通过第三螺钉固定连接壳体底板,所述壳体底部设有凹腔,所述凹腔位于阳极电极柱的正下方,所述壳体底板延伸到凹腔的开口处形成卡扣,所述壳体的四角设有固定脚。
与现有技术相比,本发明有益的效果是:1、本发明的逆导模块采用模块化设计,管芯结构简单,生产成本低,逆导组件装配方便,逆导模块整体使用方便,还能简化电路设计;通态平均电流等技术参数高于一般的S3900MF产品,可应用于地铁、动车、城市无轨电车、工矿电力机车的直流斩波装置中和各种逆变电路中,大幅降低直流斩波装置和各种逆变器的成本。2、本发明设有碟簧和管芯压块,对管芯进行弹性固定,固定牢靠,减震效果好,管芯位置不容易松动;3、壳体底板采用陶瓷覆铜板,经独特焊接工艺,保证焊接层无空洞,导热性能好。热循环负载次数高于国家标准近10倍。所述公共极板与壳体底板之间设有陶瓷垫片,芯管、公共极板与壳体底板相互隔离,壳体底板导热不带电,绝缘强度高,保证人身安全。绝缘、防潮性能优良,4、逆导模块内设有绝缘套管和芯管压块,采用进口高级导热绝缘封装材料,相邻阴极电极柱之间、阴极电极柱与芯管之间的相互隔离,绝缘、防潮性能优良。
附图说明
图1为本实施例的主视结构示意图;
图2为本实施例的俯视结构示意图;
图3为本实施例的电路连接原理图;
附图标记说明:1、壳体,11、阳极电极柱,12、端子座,121、控制端子,13、连接导线,14、固定脚,15、固定部,16、第三螺钉,17、凹腔,31、卡扣,2、壳体上盖,21、第二螺钉,3、壳体底板,4、逆导组件,41、管芯,411、门极引线组件,42、阴极电极柱,421、第一凸缘,43、绝缘套管,431、第二凸缘,44、碟簧,441、垫圈,45、压板,451、第一螺钉,452、绝缘垫片,453、限位孔,46、管芯压块,461、引线槽,47、连接板,48、阴极引线片,5、公共极板,51、竖板,52、连接极板,6、陶瓷垫片。
具体实施方式
下面结合附图对本发明作进一步说明:
参照附图1-3:本实施例1中一种逆导模块,包括壳体1、壳体上盖2、壳体底板3和若干个逆导组件4,所述逆导组件4包括管芯41,所述管芯41为一只晶闸管和一只快速整流管反并联封装,所述逆导组件4还包括位于所述管芯41上方的阴极电极柱42,阴极电极柱42上端穿出壳体上盖2,所述阴极电极柱42上套有绝缘套管43,所述阴极电极柱42与绝缘套管43的下端分别具有第一凸缘421和第二凸缘431,所述绝缘套管43上套有碟簧44,所述碟簧44上端设有压板45,压板45与壳体底板3之间通过第一螺钉451进行固定连接,所述碟簧44下端与第二凸缘431的上端之间设有垫圈441,所述管芯41设置在壳体底板3上方,所述管芯41上部与阴极电极柱42下端之间设有管芯压块46,所述管芯41下部设有公共极板5,所述公共极板5与壳体底板3之间设有陶瓷垫片6,所述第一凸缘421和第二凸缘431之间设有连接板47,所述连接板47上设有阴极引线片48,阴极引线片48与所述晶闸管的阴极连接,所述管芯41上设有门极引线组件411,门极引线组件411与所述晶闸管的门极连接,所述壳体1的左右两边分别设有阳极电极柱11和端子座12,所述公共极板5连接所述晶闸管的阳极与所述阳极电极柱11,所述端子座12上设有若干对的控制端子121,控制端子121所述阴极引线片48和门极引线组件411通过连接导线13分别连接到一对所述控制端子121上。所述管芯压块46下侧设有引线槽461,引线槽461一端与管芯压块46侧壁连通,所述门极引线组件411位于所述引线槽461内。所述壳体上盖2与压板45通过成对的第二螺钉21进行固定连接,成对所述第二螺钉21分别位于阴极电极柱42的前后两侧。本发明产品的技术参数如下表所示:
参数 符号 单位 MN500-30 备注
通态平均电流 I<sub>T(AV)</sub> A 500
反向平均电流 I<sub>R(AV)</sub> A 500
断态重复峰值电压 V<sub>DRM</sub> V ≥3000
通态峰值电压 V<sub>TM</sub> V ≤3.0(1500A25℃)
反向峰值电压 V<sub>RM</sub> V ≤2.0(1500A25℃)
断态重复峰值电流 I<sub>DRM</sub> mA ≤1.0
门极触发电压 V<sub>GT</sub> V ≤3.0
门极触发电流 I<sub>GT</sub> mA ≤70
换流关断时间 tq μs
断态电压临界上升率 dV/dt V/μs >500(200025℃)
通态浪涌电流 I<sub>TSM</sub> kA 7.5
另外在实施例1的基础上,所述公共极板5的左端设有竖板51,竖板51与壳体1的内壁贴合,竖板51上端设有与阳极电极柱11相连接的连接极板52。公共极板5的面积大散热快。所述压板45上侧设有绝缘垫片452,可以提高上侧的绝缘性能。所述压板45上设有与绝缘套管43间隙配合的限位孔453,可以对阴极电极柱42限位,提高抗震性能,增强结构强度。所述阴极引线片48夹在第一凸缘421与连接板47之间,阴极引线片48固定牢靠,接触性能好。所述壳体1的底部设有固定部15,固定部15上侧通过第三螺钉16固定连接壳体底板3,所述壳体1底部设有凹腔17,所述凹腔17位于阳极电极柱11的正下方,所述壳体底板3延伸到凹腔17的开口处形成卡扣31,可以用于卡扣定位和增加散热面积。所述壳体1的四角设有固定脚14,用于螺栓固定。
虽然本发明已通过参考优选的实施例进行了图示和描述,但是,本专业普通技术人员应当了解,在权利要求书的范围内,可作形式和细节上的各种各样变化。

Claims (8)

1.一种逆导模块,包括壳体(1)、壳体上盖(2)、壳体底板(3)和若干个逆导组件(4),所述逆导组件(4)包括管芯(41),所述管芯(41)为一只晶闸管和一只快速整流管反并联封装,其特征是:所述逆导组件(4)还包括位于所述管芯(41)上方的阴极电极柱(42),阴极电极柱(42)上端穿出壳体上盖(2),所述阴极电极柱(42)上套有绝缘套管(43),所述阴极电极柱(42)与绝缘套管(43)的下端分别具有第一凸缘(421)和第二凸缘(431),所述绝缘套管(43)上套有碟簧(44),所述碟簧(44)上端设有压板(45),压板(45)与壳体底板(3)之间通过第一螺钉(451)进行固定连接,所述碟簧(44)下端与第二凸缘(431)的上端之间设有垫圈(441),所述管芯(41)设置在壳体底板(3)上方,所述管芯(41)上部与阴极电极柱(42)下端之间设有管芯压块(46),所述管芯(41)下部设有公共极板(5),所述公共极板(5)与壳体底板(3)之间设有陶瓷垫片(6),所述第一凸缘(421)和第二凸缘(431)之间设有连接板(47),所述连接板(47)上设有阴极引线片(48),阴极引线片(48)与所述晶闸管的阴极连接,所述管芯(41)上设有门极引线组件(411),门极引线组件(411)与所述晶闸管的门极连接,所述壳体(1)的左右两边分别设有阳极电极柱(11)和端子座(12),所述公共极板(5)连接所述晶闸管的阳极与所述阳极电极柱(11),所述端子座(12)上设有若干对的控制端子(121),控制端子(121)所述阴极引线片(48)和门极引线组件(411)通过连接导线(13)分别连接到一对所述控制端子(121)上。
2.根据权利要求1所述的一种逆导模块,其特征是:所述管芯压块(46)下侧设有引线槽(461),引线槽(461)一端与管芯压块(46)侧壁连通,所述门极引线组件(411)位于所述引线槽(461)内。
3.根据权利要求1所述的一种逆导模块,其特征是:所述壳体上盖(2)与压板(45)通过成对的第二螺钉(21)进行固定连接,成对所述第二螺钉(21)分别位于阴极电极柱(42)的前后两侧。
4.根据权利要求1所述的一种逆导模块,其特征是:所述公共极板(5)的左端设有竖板(51),竖板(51)与壳体(1)的内壁贴合,竖板(51)上端设有与阳极电极柱(11)相连接的连接极板(52)。
5.根据权利要求1所述的一种逆导模块,其特征是:所述压板(45)上侧设有绝缘垫片(452)。
6.根据权利要求1所述的一种逆导模块,其特征是:所述压板(45)上设有与绝缘套管(43)间隙配合的限位孔(453)。
7.根据权利要求1所述的一种逆导模块,其特征是:所述阴极引线片(48)夹在第一凸缘(421)与连接板(47)之间。
8.根据权利要求1所述的一种逆导模块,其特征是:所述壳体(1)的底部设有固定部(15),固定部(15)上侧通过第三螺钉(16)固定连接壳体底板(3),所述壳体(1)底部设有凹腔(17),所述凹腔(17)位于阳极电极柱(11)的正下方,所述壳体底板(3)延伸到凹腔(17)的开口处形成卡扣(31),所述壳体(1)的四角设有固定脚(14)。
CN202011440315.XA 2020-12-11 2020-12-11 一种逆导模块 Pending CN112563210A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011440315.XA CN112563210A (zh) 2020-12-11 2020-12-11 一种逆导模块

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011440315.XA CN112563210A (zh) 2020-12-11 2020-12-11 一种逆导模块

Publications (1)

Publication Number Publication Date
CN112563210A true CN112563210A (zh) 2021-03-26

Family

ID=75061125

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011440315.XA Pending CN112563210A (zh) 2020-12-11 2020-12-11 一种逆导模块

Country Status (1)

Country Link
CN (1) CN112563210A (zh)

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0593049U (ja) * 1992-05-22 1993-12-17 株式会社明電舎 圧接型半導体素子
EP0694964A2 (en) * 1994-07-27 1996-01-31 Hitachi, Ltd. Semiconductor device and package structure therefor and power inverter having semiconductor device
DE19711965A1 (de) * 1997-03-21 1998-09-24 Siemens Ag Vorrichtung zur niederinduktiven Anbindung eines abschaltbaren Thyristors an seine Ansteuereinrichtung
JPH10270675A (ja) * 1997-03-24 1998-10-09 Mitsubishi Electric Corp 圧接型半導体装置
RU84159U1 (ru) * 2009-01-11 2009-06-27 Открытое акционерное общество "Электровыпрямитель" Силовой высоковольтный тиристор штыревого типа
WO2009096233A1 (ja) * 2008-01-30 2009-08-06 Nihon Inter Electronics Corporation 圧接型大電力用サイリスタモジュール
CN201514939U (zh) * 2009-06-24 2010-06-23 湖北台基半导体股份有限公司 一种3600v高压功率半导体模块
JP2011054896A (ja) * 2009-09-04 2011-03-17 Nippon Inter Electronics Corp パワー半導体モジュール
CN206332020U (zh) * 2016-12-29 2017-07-14 江苏润奥电子制造股份有限公司 一种散热好的晶闸管调压组件
CN206789550U (zh) * 2017-05-24 2017-12-22 清远初曲智能科技有限公司 一种稳定型太阳能光伏石墨烯电池
US20180114735A1 (en) * 2016-10-20 2018-04-26 Fuji Electric Co., Ltd. Semiconductor apparatus and manufacturing method of semiconductor apparatus
CN210429774U (zh) * 2019-09-26 2020-04-28 襄阳赛普尔电子有限公司 一种晶闸管管壳
CN213818496U (zh) * 2020-12-11 2021-07-27 浙江华晶整流器有限公司 一种高压模块壳体结构

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0593049U (ja) * 1992-05-22 1993-12-17 株式会社明電舎 圧接型半導体素子
EP0694964A2 (en) * 1994-07-27 1996-01-31 Hitachi, Ltd. Semiconductor device and package structure therefor and power inverter having semiconductor device
DE19711965A1 (de) * 1997-03-21 1998-09-24 Siemens Ag Vorrichtung zur niederinduktiven Anbindung eines abschaltbaren Thyristors an seine Ansteuereinrichtung
JPH10270675A (ja) * 1997-03-24 1998-10-09 Mitsubishi Electric Corp 圧接型半導体装置
WO2009096233A1 (ja) * 2008-01-30 2009-08-06 Nihon Inter Electronics Corporation 圧接型大電力用サイリスタモジュール
RU84159U1 (ru) * 2009-01-11 2009-06-27 Открытое акционерное общество "Электровыпрямитель" Силовой высоковольтный тиристор штыревого типа
CN201514939U (zh) * 2009-06-24 2010-06-23 湖北台基半导体股份有限公司 一种3600v高压功率半导体模块
JP2011054896A (ja) * 2009-09-04 2011-03-17 Nippon Inter Electronics Corp パワー半導体モジュール
US20180114735A1 (en) * 2016-10-20 2018-04-26 Fuji Electric Co., Ltd. Semiconductor apparatus and manufacturing method of semiconductor apparatus
CN206332020U (zh) * 2016-12-29 2017-07-14 江苏润奥电子制造股份有限公司 一种散热好的晶闸管调压组件
CN206789550U (zh) * 2017-05-24 2017-12-22 清远初曲智能科技有限公司 一种稳定型太阳能光伏石墨烯电池
CN210429774U (zh) * 2019-09-26 2020-04-28 襄阳赛普尔电子有限公司 一种晶闸管管壳
CN213818496U (zh) * 2020-12-11 2021-07-27 浙江华晶整流器有限公司 一种高压模块壳体结构

Similar Documents

Publication Publication Date Title
KR101522089B1 (ko) 반도체 장치
JP2004214452A (ja) 電力用半導体モジュールおよび外部電極との結線方法
US7012810B2 (en) Leadframe-based module DC bus design to reduce module inductance
US11909327B2 (en) Half-bridge module for an inverter of an electric drive of an electric vehicle or a hybrid vehicle and an inverter for an electric drive of an electric vehicle or a hybrid vehicle
US20050128706A1 (en) Power module with heat exchange
US20130258736A1 (en) Power converter
WO2016201821A1 (zh) 一种基于iegt的大功率三电平变流器功率单元
WO2002025777A2 (en) Press (non-soldered) contacts for high current electrical connections in power modules
US12003186B2 (en) Power module for an electric drive of an electric vehicle or a hybrid vehicle, inverter comprising such a power module
CN111106098B (zh) 一种低寄生电感布局的功率模块
JP4164409B2 (ja) 半導体パワーモジュール
WO2020020140A1 (zh) 一种二极管全桥双级子模块
CN109768694A (zh) 一种具有熔断器的功率模块
CN109768039A (zh) 一种双面散热功率模块
KR940008343B1 (ko) 대전력 반도체장치
US10554123B2 (en) Power converter with a parallel flat plate conductor electrically connected with a capacitor and a power module
CN212113470U (zh) 一种采用外置母排的金属外壳薄膜电容器
CN112563210A (zh) 一种逆导模块
US6445013B1 (en) Gate commutated turn-off semiconductor device
JPH1093085A (ja) 半導体デバイスのパッケージ及びそれを用いた電力変換装置
JPS582522B2 (ja) 電気車制御装置
CN209880607U (zh) 一种新型半导体igbt模块组合
CN112271164A (zh) 一种低电感碳化硅模块
CN109585437A (zh) 一种多层功率模块
JP2003143868A (ja) インバータ装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination