CN112553571A - 一种Open Mask表面IZO蒸镀材料的清洗方法 - Google Patents

一种Open Mask表面IZO蒸镀材料的清洗方法 Download PDF

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Publication number
CN112553571A
CN112553571A CN202011449215.3A CN202011449215A CN112553571A CN 112553571 A CN112553571 A CN 112553571A CN 202011449215 A CN202011449215 A CN 202011449215A CN 112553571 A CN112553571 A CN 112553571A
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pure water
open mask
ultrasonic
cleaning
izo
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邹专政
惠朝先
邱俊
吕先锋
陈运友
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Sichan Ferrotec Technology Development Co ltd
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Sichan Ferrotec Technology Development Co ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/08Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/10Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

本发明公开了一种Open Mask表面IZO蒸镀材料的清洗方法,包括以下步骤:步骤10、浸泡;步骤20、超声波纯水清洗;步骤30、无尘超声波纯水清洗;步骤40、干燥。本发明能在保证Open Mask本体的完好度的前提下清洗去除Open Mask表面IZO蒸镀材料。

Description

一种Open Mask表面IZO蒸镀材料的清洗方法
技术领域
本发明属于Open Mask表面IZO蒸镀材料清洗领域,具体涉及一种Open Mask表面IZO蒸镀材料的清洗方法。
背景技术
Open Mask是OLED蒸镀制程中的关键治具,在其使用过程中表面会附着蒸镀材料,若蒸镀材料附着过多将会影响OLED产品质量。所以需对Open Mask进行定期的洗净再生,以确保OLED产品质量。目前国内Open Mask洗净再生相关暂处于空白领域。
发明内容
本发明所要解决的技术问题便是针对上述现有技术的不足,提供一种Open Mask表面IZO蒸镀材料的清洗方法,能在保证Open Mask本体的完好度的前提下清洗去除OpenMask表面IZO蒸镀材料。
本发明所采用的技术方案是:一种Open Mask表面IZO蒸镀材料的清洗方法,包括以下步骤:
步骤10、浸泡:将待清洗的Open Mask放入50%草酸溶液中浸泡,浸泡过程中草酸溶液温度为40±5℃;
步骤20、超声波纯水清洗:将步骤10中经过浸泡的Open Mask送入超声波纯水槽中进行超声波纯水清洗,超声波纯水清洗过程中,超声波功率为900±100W,超声波能量密度为5w/inch2-10w/inch2
步骤30、无尘超声波纯水清洗:将步骤20中经超声波纯水清洗的Open Mask送入无尘室进行超声波纯水清洗,超声波纯水清洗过程中,超声波功率为900±100W,超声波能量密度为5w/inch2-10w/inch2
步骤40、干燥:将步骤30中经过无尘超声波纯水清洗的Open Mask在无尘室进行干燥,即可完成Open Mask表面IZO蒸镀材料的清洗。
其中一个实施例中,步骤10中,所述浸泡时间为10min。
其中一个实施例中,步骤40中,所述干燥方式为自然晾干。
其中一个实施例中,步骤40中,所述干燥温度为20℃。
本发明的有益效果在于:能在保证Open Mask本体的完好度的前提下清洗去除Open Mask表面IZO蒸镀材料。
具体实施方式
下面将结合具体实施例对本发明作进一步详细说明。
本发明公开了一种Open Mask表面IZO蒸镀材料的清洗方法,包括以下步骤:
步骤10、浸泡:将待清洗的Open Mask放入50%草酸溶液中浸泡,浸泡过程中草酸溶液温度为40±5℃;(请针对步骤10补充其效果及要求,即补充浸泡的作用及浸泡过程中的特殊要求)
步骤20、超声波纯水清洗:将步骤10中经过浸泡的Open Mask送入超声波纯水槽中进行超声波纯水清洗,超声波纯水清洗过程中,超声波功率为900±100W,超声波能量密度为5w/inch2-10w/inch2
步骤30、无尘超声波纯水清洗:将步骤20中经超声波纯水清洗的Open Mask送入无尘室进行超声波纯水清洗,超声波纯水清洗过程中,超声波功率为900±100W,超声波能量密度为5w/inch2-10w/inch2
步骤40、干燥:将步骤30中经过无尘超声波纯水清洗的Open Mask在无尘室进行干燥,即可完成Open Mask表面IZO蒸镀材料的清洗。
本实施例中,步骤10中,所述浸泡时间为10min。
本实施例中,步骤40中,所述干燥方式为自然晾干。
本实施例中,步骤40中,所述干燥温度为20℃。
步骤10中,IZO膜去除完成时,转移到纯水槽漂洗的转移时间尽量短,不宜残留药液暴露于空气中。步骤20中,清洗残留在夹缝和孔洞残留的药液,超声波槽电导率<1μs/cm。步骤30中,进一步清洗残留在夹缝和孔洞残留的药液,完成超声清洗时,超声波槽电导率<1μs/cm。
Open Mask本体材质为因瓦合金,易被强酸腐蚀,因此需采用热的有机酸去膜可以避免腐蚀本体。本申请选用50%草酸溶液进行清洗,并保持其温度在40±5℃,以保证清洗的效果。
以上所述实施例仅表达了本发明的具体实施方式,其描述较为具体和详细,但并不能因此而理解为对本发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。

Claims (4)

1.一种Open Mask表面IZO蒸镀材料的清洗方法,其特征在于,包括以下步骤:
步骤10、浸泡:将待清洗的Open Mask放入50%草酸溶液中浸泡,浸泡过程中草酸溶液温度为40±5℃;
步骤20、超声波纯水清洗:将步骤10中经过浸泡的Open Mask送入超声波纯水槽中进行超声波纯水清洗,超声波纯水清洗过程中,超声波功率为900±100W,超声波能量密度为5w/inch2-10w/inch2
步骤30、无尘超声波纯水清洗:将步骤20中经超声波纯水清洗的Open Mask送入无尘室进行超声波纯水清洗,超声波纯水清洗过程中,超声波功率为900±100W,超声波能量密度为5w/inch2-10w/inch2
步骤40、干燥:将步骤30中经过无尘超声波纯水清洗的Open Mask在无尘室进行干燥,即可完成Open Mask表面IZO蒸镀材料的清洗。
2.根据权利要求1所述的一种Open Mask表面IZO蒸镀材料的清洗方法,其特征在于,步骤10中,所述浸泡时间为10min。
3.根据权利要求1所述的一种Open Mask表面IZO蒸镀材料的清洗方法,其特征在于,步骤40中,所述干燥方式为自然晾干。
4.根据权利要求1所述的一种Open Mask表面IZO蒸镀材料的清洗方法,其特征在于,步骤40中,所述干燥温度为20℃。
CN202011449215.3A 2020-12-09 2020-12-09 一种Open Mask表面IZO蒸镀材料的清洗方法 Pending CN112553571A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113512729A (zh) * 2021-04-13 2021-10-19 全洋(黄石)材料科技有限公司 一种amoled板材自动清洗工艺
CN114247695A (zh) * 2021-12-29 2022-03-29 安徽应友光电科技有限公司 一种关于OLED掩膜版open mask表面镁银材料的清洗方法

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GB1328662A (en) * 1969-11-25 1973-08-30 Eastman Kodak Co Method of cleaning a flexible web and apparatus therefor
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CN104152846A (zh) * 2014-02-21 2014-11-19 唐军 一种掩模板清洗系统
CN104399693A (zh) * 2014-11-26 2015-03-11 成都川硬合金材料有限责任公司 一种超声波清洗工艺
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CN106702319A (zh) * 2017-03-30 2017-05-24 京东方科技集团股份有限公司 一种蒸镀方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1328662A (en) * 1969-11-25 1973-08-30 Eastman Kodak Co Method of cleaning a flexible web and apparatus therefor
CN1746331A (zh) * 2004-09-01 2006-03-15 三洋电机株式会社 清洗装置
JP2011183249A (ja) * 2010-03-04 2011-09-22 Hitachi High-Technologies Corp 蒸着マスクの洗浄装置
CN102662267A (zh) * 2012-04-25 2012-09-12 深圳市华星光电技术有限公司 液晶面板的制作方法
CN104152846A (zh) * 2014-02-21 2014-11-19 唐军 一种掩模板清洗系统
CN104399693A (zh) * 2014-11-26 2015-03-11 成都川硬合金材料有限责任公司 一种超声波清洗工艺
CN104438214A (zh) * 2014-12-01 2015-03-25 中航电测仪器股份有限公司 一种超薄成卷带材连续清洗装置及清洗工艺
CN106702319A (zh) * 2017-03-30 2017-05-24 京东方科技集团股份有限公司 一种蒸镀方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113512729A (zh) * 2021-04-13 2021-10-19 全洋(黄石)材料科技有限公司 一种amoled板材自动清洗工艺
CN114247695A (zh) * 2021-12-29 2022-03-29 安徽应友光电科技有限公司 一种关于OLED掩膜版open mask表面镁银材料的清洗方法
CN114247695B (zh) * 2021-12-29 2023-08-29 安徽应友光电科技有限公司 一种关于OLED掩膜版open mask表面镁银材料的清洗方法

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