CN112553571A - 一种Open Mask表面IZO蒸镀材料的清洗方法 - Google Patents
一种Open Mask表面IZO蒸镀材料的清洗方法 Download PDFInfo
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- CN112553571A CN112553571A CN202011449215.3A CN202011449215A CN112553571A CN 112553571 A CN112553571 A CN 112553571A CN 202011449215 A CN202011449215 A CN 202011449215A CN 112553571 A CN112553571 A CN 112553571A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
本发明公开了一种Open Mask表面IZO蒸镀材料的清洗方法,包括以下步骤:步骤10、浸泡;步骤20、超声波纯水清洗;步骤30、无尘超声波纯水清洗;步骤40、干燥。本发明能在保证Open Mask本体的完好度的前提下清洗去除Open Mask表面IZO蒸镀材料。
Description
技术领域
本发明属于Open Mask表面IZO蒸镀材料清洗领域,具体涉及一种Open Mask表面IZO蒸镀材料的清洗方法。
背景技术
Open Mask是OLED蒸镀制程中的关键治具,在其使用过程中表面会附着蒸镀材料,若蒸镀材料附着过多将会影响OLED产品质量。所以需对Open Mask进行定期的洗净再生,以确保OLED产品质量。目前国内Open Mask洗净再生相关暂处于空白领域。
发明内容
本发明所要解决的技术问题便是针对上述现有技术的不足,提供一种Open Mask表面IZO蒸镀材料的清洗方法,能在保证Open Mask本体的完好度的前提下清洗去除OpenMask表面IZO蒸镀材料。
本发明所采用的技术方案是:一种Open Mask表面IZO蒸镀材料的清洗方法,包括以下步骤:
步骤10、浸泡:将待清洗的Open Mask放入50%草酸溶液中浸泡,浸泡过程中草酸溶液温度为40±5℃;
步骤20、超声波纯水清洗:将步骤10中经过浸泡的Open Mask送入超声波纯水槽中进行超声波纯水清洗,超声波纯水清洗过程中,超声波功率为900±100W,超声波能量密度为5w/inch2-10w/inch2;
步骤30、无尘超声波纯水清洗:将步骤20中经超声波纯水清洗的Open Mask送入无尘室进行超声波纯水清洗,超声波纯水清洗过程中,超声波功率为900±100W,超声波能量密度为5w/inch2-10w/inch2;
步骤40、干燥:将步骤30中经过无尘超声波纯水清洗的Open Mask在无尘室进行干燥,即可完成Open Mask表面IZO蒸镀材料的清洗。
其中一个实施例中,步骤10中,所述浸泡时间为10min。
其中一个实施例中,步骤40中,所述干燥方式为自然晾干。
其中一个实施例中,步骤40中,所述干燥温度为20℃。
本发明的有益效果在于:能在保证Open Mask本体的完好度的前提下清洗去除Open Mask表面IZO蒸镀材料。
具体实施方式
下面将结合具体实施例对本发明作进一步详细说明。
本发明公开了一种Open Mask表面IZO蒸镀材料的清洗方法,包括以下步骤:
步骤10、浸泡:将待清洗的Open Mask放入50%草酸溶液中浸泡,浸泡过程中草酸溶液温度为40±5℃;(请针对步骤10补充其效果及要求,即补充浸泡的作用及浸泡过程中的特殊要求)
步骤20、超声波纯水清洗:将步骤10中经过浸泡的Open Mask送入超声波纯水槽中进行超声波纯水清洗,超声波纯水清洗过程中,超声波功率为900±100W,超声波能量密度为5w/inch2-10w/inch2;
步骤30、无尘超声波纯水清洗:将步骤20中经超声波纯水清洗的Open Mask送入无尘室进行超声波纯水清洗,超声波纯水清洗过程中,超声波功率为900±100W,超声波能量密度为5w/inch2-10w/inch2;
步骤40、干燥:将步骤30中经过无尘超声波纯水清洗的Open Mask在无尘室进行干燥,即可完成Open Mask表面IZO蒸镀材料的清洗。
本实施例中,步骤10中,所述浸泡时间为10min。
本实施例中,步骤40中,所述干燥方式为自然晾干。
本实施例中,步骤40中,所述干燥温度为20℃。
步骤10中,IZO膜去除完成时,转移到纯水槽漂洗的转移时间尽量短,不宜残留药液暴露于空气中。步骤20中,清洗残留在夹缝和孔洞残留的药液,超声波槽电导率<1μs/cm。步骤30中,进一步清洗残留在夹缝和孔洞残留的药液,完成超声清洗时,超声波槽电导率<1μs/cm。
Open Mask本体材质为因瓦合金,易被强酸腐蚀,因此需采用热的有机酸去膜可以避免腐蚀本体。本申请选用50%草酸溶液进行清洗,并保持其温度在40±5℃,以保证清洗的效果。
以上所述实施例仅表达了本发明的具体实施方式,其描述较为具体和详细,但并不能因此而理解为对本发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。
Claims (4)
1.一种Open Mask表面IZO蒸镀材料的清洗方法,其特征在于,包括以下步骤:
步骤10、浸泡:将待清洗的Open Mask放入50%草酸溶液中浸泡,浸泡过程中草酸溶液温度为40±5℃;
步骤20、超声波纯水清洗:将步骤10中经过浸泡的Open Mask送入超声波纯水槽中进行超声波纯水清洗,超声波纯水清洗过程中,超声波功率为900±100W,超声波能量密度为5w/inch2-10w/inch2;
步骤30、无尘超声波纯水清洗:将步骤20中经超声波纯水清洗的Open Mask送入无尘室进行超声波纯水清洗,超声波纯水清洗过程中,超声波功率为900±100W,超声波能量密度为5w/inch2-10w/inch2;
步骤40、干燥:将步骤30中经过无尘超声波纯水清洗的Open Mask在无尘室进行干燥,即可完成Open Mask表面IZO蒸镀材料的清洗。
2.根据权利要求1所述的一种Open Mask表面IZO蒸镀材料的清洗方法,其特征在于,步骤10中,所述浸泡时间为10min。
3.根据权利要求1所述的一种Open Mask表面IZO蒸镀材料的清洗方法,其特征在于,步骤40中,所述干燥方式为自然晾干。
4.根据权利要求1所述的一种Open Mask表面IZO蒸镀材料的清洗方法,其特征在于,步骤40中,所述干燥温度为20℃。
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Cited By (2)
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CN114247695A (zh) * | 2021-12-29 | 2022-03-29 | 安徽应友光电科技有限公司 | 一种关于OLED掩膜版open mask表面镁银材料的清洗方法 |
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CN114247695B (zh) * | 2021-12-29 | 2023-08-29 | 安徽应友光电科技有限公司 | 一种关于OLED掩膜版open mask表面镁银材料的清洗方法 |
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