CN112514090A - 磁电阻随机存储单元、存储器和存取方法 - Google Patents
磁电阻随机存储单元、存储器和存取方法 Download PDFInfo
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- CN112514090A CN112514090A CN201880095811.0A CN201880095811A CN112514090A CN 112514090 A CN112514090 A CN 112514090A CN 201880095811 A CN201880095811 A CN 201880095811A CN 112514090 A CN112514090 A CN 112514090A
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- ferromagnetic layer
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- memory cell
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- 230000015654 memory Effects 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims description 12
- 230000004888 barrier function Effects 0.000 claims abstract description 118
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 100
- 230000005291 magnetic effect Effects 0.000 claims abstract description 89
- 239000000463 material Substances 0.000 claims description 14
- 239000000395 magnesium oxide Substances 0.000 claims description 8
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 8
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 8
- 229910019236 CoFeB Inorganic materials 0.000 claims description 6
- ZDZZPLGHBXACDA-UHFFFAOYSA-N [B].[Fe].[Co] Chemical compound [B].[Fe].[Co] ZDZZPLGHBXACDA-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 230000009977 dual effect Effects 0.000 abstract description 18
- 230000002441 reversible effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004590 computer program Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003302 ferromagnetic material Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
一种磁电阻随机存储单元(20)和磁电阻随机存储器，能够提高存储器的读写速度。该磁电阻随机存储单元(20)包括：具有固定磁矩的固定铁磁层(21)；具有可翻转的磁矩的自由铁磁层(22)；磁隧道势垒(23)，位于所述固定铁磁层(21)以及所述自由铁磁层(22)之间，包括由第一势垒层(41)、导电层(43)和第二势垒层(42)形成的双隧道势垒量子阱。
Description
PCT国内申请，说明书已公开。
Claims (9)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2018/115711 WO2020097872A1 (zh) | 2018-11-15 | 2018-11-15 | 磁电阻随机存储单元、存储器和存取方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112514090A true CN112514090A (zh) | 2021-03-16 |
| CN112514090B CN112514090B (zh) | 2023-11-10 |
Family
ID=70730377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880095811.0A Active CN112514090B (zh) | 2018-11-15 | 2018-11-15 | 磁电阻随机存储单元、存储器和存取方法 |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP3872879A4 (zh) |
| CN (1) | CN112514090B (zh) |
| WO (1) | WO2020097872A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022241735A1 (zh) * | 2021-05-20 | 2022-11-24 | 华为技术有限公司 | 自旋逻辑器件、存算一体器件、半加器和全加器 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080232002A1 (en) * | 2007-03-22 | 2008-09-25 | Freescale Semiconductor, Inc. | Mram tunnel barrier structure and methods |
| CN102683580A (zh) * | 2011-03-18 | 2012-09-19 | 三星电子株式会社 | 磁隧道结器件、电子系统以及存储系统及其制造方法 |
| CN105405860A (zh) * | 2015-10-15 | 2016-03-16 | 上海磁宇信息科技有限公司 | 交叉矩阵列式磁性随机存储器及其读写方法 |
| CN105449097A (zh) * | 2015-11-27 | 2016-03-30 | 中国科学院物理研究所 | 双磁性势垒隧道结以及包括其的自旋电子学器件 |
| US20160254012A1 (en) * | 2015-02-27 | 2016-09-01 | Seagate Technology Llc | Data reader with resonant tunneling |
| US20170345868A1 (en) * | 2016-05-24 | 2017-11-30 | Samsung Electronics Co., Ltd. | Dmtj structure for sub-25nm designs with cancelled flowering field effects |
| CN108511602A (zh) * | 2017-02-28 | 2018-09-07 | 中电海康集团有限公司 | Mtj单元及stt-mram |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101586380B1 (ko) * | 2010-03-29 | 2016-01-19 | 삼성전자주식회사 | 자기 메모리 소자 및 그 형성방법 |
| CN107221596A (zh) * | 2017-05-25 | 2017-09-29 | 湖北中部慧易数据科技有限公司 | 一种用于实现自旋扭矩传递切换的磁性元件、制备方法及磁存储器件 |
-
2018
- 2018-11-15 WO PCT/CN2018/115711 patent/WO2020097872A1/zh unknown
- 2018-11-15 CN CN201880095811.0A patent/CN112514090B/zh active Active
- 2018-11-15 EP EP18939870.4A patent/EP3872879A4/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080232002A1 (en) * | 2007-03-22 | 2008-09-25 | Freescale Semiconductor, Inc. | Mram tunnel barrier structure and methods |
| CN102683580A (zh) * | 2011-03-18 | 2012-09-19 | 三星电子株式会社 | 磁隧道结器件、电子系统以及存储系统及其制造方法 |
| US20160254012A1 (en) * | 2015-02-27 | 2016-09-01 | Seagate Technology Llc | Data reader with resonant tunneling |
| CN105405860A (zh) * | 2015-10-15 | 2016-03-16 | 上海磁宇信息科技有限公司 | 交叉矩阵列式磁性随机存储器及其读写方法 |
| CN105449097A (zh) * | 2015-11-27 | 2016-03-30 | 中国科学院物理研究所 | 双磁性势垒隧道结以及包括其的自旋电子学器件 |
| US20170345868A1 (en) * | 2016-05-24 | 2017-11-30 | Samsung Electronics Co., Ltd. | Dmtj structure for sub-25nm designs with cancelled flowering field effects |
| CN108511602A (zh) * | 2017-02-28 | 2018-09-07 | 中电海康集团有限公司 | Mtj单元及stt-mram |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022241735A1 (zh) * | 2021-05-20 | 2022-11-24 | 华为技术有限公司 | 自旋逻辑器件、存算一体器件、半加器和全加器 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3872879A4 (en) | 2021-11-10 |
| CN112514090B (zh) | 2023-11-10 |
| WO2020097872A1 (zh) | 2020-05-22 |
| EP3872879A1 (en) | 2021-09-01 |
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