CN112514038B

CN112514038B - Coating device and coating method

Info

Publication number: CN112514038B
Application number: CN201980051182.6A
Authority: CN
Inventors: 五十川良则
Original assignee: Tazmo Co Ltd
Current assignee: Tazmo Co Ltd
Priority date: 2018-09-12
Filing date: 2019-08-29
Publication date: 2024-02-13
Anticipated expiration: 2039-08-29
Also published as: JP2020043244A; WO2020054440A1; CN112514038A; TWI726414B; JP7112917B2; TW202030803A

Abstract

A coating device is provided with: a processing chamber; a nozzle that moves relatively along a coating target surface in the processing chamber and applies a solution of a crystalline material to the coating target surface; an internal pressure adjusting unit for adjusting the internal pressure of the processing chamber; and a control unit. When the solution is applied through the nozzle, the control unit adjusts the internal pressure of the processing chamber by the internal pressure adjusting unit, and sequentially dries the solution applied to the surface to be coated, thereby growing crystals of the crystalline material.

Description

Coating device and coating method

Technical Field

One embodiment of the present invention relates to a technique for forming a crystalline film by applying a solution.

Background

As a technique for forming a crystalline film, a technique for forming a semiconductor film by applying a solution of a semiconductor material and drying the solution to crystallize and grow the semiconductor material in the solution has been proposed. For example, patent document 1 discloses the following technique: the nozzle is moved in a state where a liquid product of the solution is formed between the ejection portion of the nozzle and the surface (the surface to be coated) of the substrate, so that a coating film is formed behind the liquid product, and the coating film is sequentially dried to grow crystals of the semiconductor material.

More specifically, patent document 1 proposes the following: the overhang portion is provided in the nozzle body portion, so that a space sandwiched between the lower end surface of the nozzle body portion and the surface of the substrate is formed between these surfaces, and a liquid product is formed in this space. In addition, by forming such a space, the space is filled with the solvent evaporated from the liquid product (i.e., the vicinity of the liquid product) to form a solvent atmosphere, and thus, the solvent is prevented from continuously evaporating from the liquid product to form a supersaturated state (i.e., crystallization of the semiconductor material occurs in the liquid product). Then, the nozzle is moved while maintaining the state of the liquid product, a coating film is formed behind the liquid product, and the coating film is relatively moved to a position where the solvent atmosphere is released (a position where the solvent is released from the space), whereby the solvent is sequentially evaporated from the coating film at the position to grow the semiconductor material crystal. Thus, patent document 1 discloses a method for improving the degree of crystal orientation of a semiconductor film to be formed (a degree indicating how much the crystal direction is aligned (degree of orientation) in a crystal film such as a semiconductor film).

Prior art literature

Patent literature

Patent document 1: japanese patent No. 5891956

Disclosure of Invention

Problems to be solved by the invention

However, in patent document 1, in order to avoid the liquid accumulation from becoming supersaturated, it is necessary to control the atmosphere in the space with high accuracy. On the other hand, at the position where the semiconductor material crystal grows (i.e., the position where the coating film is extracted from the above-mentioned space), no particular control is made with respect to atmosphere, temperature, and the like. Therefore, although a change in atmosphere, temperature, or the like at a position where the semiconductor material crystal grows has a large influence on the state (degree of crystal orientation, or the like) of the semiconductor film, the change in atmosphere, temperature, or the like at the position cannot be dealt with. Thus, in the technique disclosed in patent document 1, it is difficult to stably form a semiconductor film having a high degree of crystal orientation.

Accordingly, an object of at least one embodiment of the present invention is to stably form a crystalline film having a high degree of crystal orientation in a technique for forming a crystalline film by application of a solution.

Means for solving the problems

The coating device according to an embodiment of the present invention includes: a processing chamber; a nozzle that moves relatively along a coating target surface in the processing chamber and applies a solution of a crystalline material to the coating target surface; an internal pressure adjusting unit for adjusting the internal pressure of the processing chamber; and a control unit. When the solution is applied through the nozzle, the control unit adjusts the internal pressure of the processing chamber by the internal pressure adjusting unit, and sequentially dries the solution applied to the surface to be coated, thereby growing crystals of the crystalline material.

According to the coating apparatus, the drying rate of the solution applied to the surface to be coated can be adjusted by adjusting the internal pressure of the processing chamber. Specifically, by reducing the internal pressure of the processing chamber, evaporation of the solvent in the solution can be promoted to increase the drying speed. Further, by increasing the internal pressure of the processing chamber, evaporation of the solvent in the solution can be suppressed, and the drying speed can be reduced. Further, by adjusting the drying speed to a desired speed, the degree of crystal orientation of the crystal film can be improved under control.

Effects of the invention

According to an embodiment of the present invention, a crystalline film having a high degree of crystal orientation can be stably formed.

Drawings

Fig. 1 is a conceptual diagram showing a coating apparatus according to an embodiment of the present invention, and also shows a structure inside a process chamber.

Fig. 2 is a conceptual diagram of the coating apparatus as viewed from a direction (predetermined direction D1) in which the nozzle is moved relative to the substrate, and also shows a structure inside the process chamber.

Fig. 3 is a flowchart showing a control process (coating process) performed by the coating apparatus.

Fig. 4 is a conceptual diagram showing a state of a liquid pool (meniscus) formed at the time of coating.

Detailed Description

The coating technique according to an embodiment of the present invention is a technique of forming a crystal film by applying a solution of a crystal material to a surface to be coated and drying the solution, thereby crystallizing and growing the crystal material in the solution. The crystalline material is a material capable of crystallizing, such as a semiconductor material, and is a material capable of precipitating and growing crystals by drying a solution formed by dissolving the material in a liquid (solvent). The inventors of the present invention have studied the case where the drying rate of the solution and the evaporation direction of the solvent have a great influence on the state (mainly, the degree of crystal orientation and the uniformity of film thickness) of the semiconductor film formed by the crystal growth of the semiconductor material which is one of the crystal materials. Further, the present inventors have found that a semiconductor film having a high degree of crystal orientation can be stably formed by controlling the drying rate of a solution and the evaporation direction of a solvent. The coating technique described below is a technique that has been made using such a study result.

Hereinafter, a case will be described in which a semiconductor film is formed on a surface of a substrate with the surface as a coating target surface. The coating technique according to an embodiment of the present invention is not limited to the case where the surface of the substrate is the surface to be coated, but may be applied to the case where various surfaces capable of forming a semiconductor film are the surfaces to be coated. The coating technique according to an embodiment of the present invention is not limited to the case of forming a semiconductor film from a solution of a semiconductor material, and may be applied to the case of forming a crystal film from a solution of a crystal material that can be crystallized and grown by drying the solution.

[1] Structure of coating device

Fig. 1 and 2 are conceptual views showing a coating apparatus according to an embodiment of the present invention. As shown in fig. 1 and 2, the coating apparatus includes a processing chamber 1, a chuck section 2, a solution supply section 3, an internal pressure adjustment section 4, a control section 5, and a storage section 6. Fig. 2 is a view of the coating apparatus from the direction (predetermined direction D1) in which the nozzle 31 is moved relative to the substrate Tm. Fig. 1 and 2 also illustrate the structure of the inside of the processing chamber 1.

< treatment Chamber 1>

The processing chamber 1 is a chamber used in formation of a semiconductor film. The processing chamber 1 is configured to be divided into an upper portion and a lower portion so as to be capable of carrying in and out a substrate Tm to be a semiconductor film, and is configured to be capable of being separated in a vertical direction (not shown). The upper portion and the lower portion are brought close to each other to be combined, thereby sealing the processing chamber 1.

< chuck segment 2>

Chuck segment 2 includes a table 21 and a table driving unit 22.

The stage 21 is provided in the process chamber 1 with the mounting surface 21a on which the substrate Tm is mounted facing upward, and attracts the substrate Tm placed at a predetermined position on the mounting surface 21a, thereby fixing the substrate Tm so as not to deviate from the predetermined position. The stage 21 is not limited to a structure for fixing the substrate Tm to a predetermined position by an attractive force, and may be modified to various stages capable of fixing the substrate Tm to a predetermined position, such as a structure for fixing by an electrostatic force.

The stage driving unit 22 is a mechanism capable of moving the stage 21 in the predetermined direction D1, and controls the operation (movement direction, movement speed, etc.) of the stage 21 in accordance with a command from the control unit 5.

In the present embodiment, the table 21 is slidably guided by two guide rails 210 extending in the predetermined direction D1 (see fig. 2). In fig. 1, the guide rail 210 is not shown. The table driving unit 22 is composed of a ball screw 221 and a motor 222 for rotating a shaft portion 221a of the ball screw 221 (see fig. 1 and 2). Specifically, the shaft portion 221a of the ball screw 221 passes through the lower side of the table 21 at a position between the two guide rails 210 in a state where the axial direction thereof coincides with the moving direction (i.e., the predetermined direction D1) of the table 21. Both ends of the shaft 221A are pivotally supported by the side walls 11A and 11B of the processing chamber 1, respectively, and one end is connected to the motor 222 outside the processing chamber 1. A nut portion 221b of the ball screw 221 is fixed to the back surface 21b (the surface opposite to the mounting surface 21 a) of the table 21.

According to this configuration, the rotational movement of the motor 222 can be converted into the translational movement of the nut portion 221b, thereby realizing the movement of the table 21 in the predetermined direction D1. The stage driving unit 22 controls the rotation of the motor 222 in accordance with a command from the control unit 5, thereby controlling the operation (movement direction, movement speed, etc.) of the stage 21. Further, according to the above configuration, since the motor 222 can be disposed outside the processing chamber 1, a normal motor can be used as the motor 222. That is, if the motor 222 is disposed in the process chamber 1, a motor that can be applied to the environment (vacuum state, pressurized state, etc.) in the process chamber 1 is required, but if the above-described structure is adopted, such a motor is not required.

< solution supply portion 3>

The solution supply unit 3 includes a nozzle 31, a nozzle driving unit 32, and a liquid feed pump 33.

The nozzle 31 moves relatively along the surface (coating target surface) of the substrate Tm in the processing chamber 1, and applies a solution of the semiconductor material to the surface. In the present embodiment, the nozzle 31 is fixed to a predetermined position in the process chamber 1 in a plan view of the coating apparatus, and is moved relative to the stage 21 (i.e., relative to the substrate Tm mounted on the stage 21) by movement of the stage 21 in the predetermined direction D1.

In the present embodiment, the nozzle 31 is a slit nozzle having a slit-shaped discharge port 31a (see fig. 1 and 2). The longitudinal direction D2 of the discharge port 31a is a direction parallel to the mounting surface 21a of the stage 21 (i.e., parallel to the surface (the surface to be coated) of the substrate Tm mounted on the mounting surface 21 a) and perpendicular to the direction in which the nozzle 31 moves relative to the stage 21 (i.e., the predetermined direction D1). That is, the nozzle 31 is disposed so that the longitudinal direction D2 of the discharge port 31a coincides with the width direction of the applied solution (coating film).

The nozzle driving unit 32 is a mechanism capable of moving the nozzle 31 in the up-down direction, and adjusts the height position of the nozzle 31 with respect to the substrate Tm in accordance with a command from the control unit 5.

In the present embodiment, the nozzle driving unit 32 is configured by a nozzle supporting unit 321 that supports the nozzle 31, a ball screw 322, a screw supporting unit 323 that supports the ball screw 322, and a motor 324 that rotates a shaft portion 322a of the ball screw 322 (see fig. 1 and 2). Specifically, the nozzle support 321 is supported by the top wall 11C of the process chamber 1 so as to be slidable in the up-down direction. Further, inside the processing chamber 1, the nozzle 31 is fixed to an end of the nozzle support 321. The ball screw 322, the screw support portion 323, and the motor 324 are disposed outside the processing chamber 1, and the shaft portion 322a of the ball screw 322 is pivotally supported by the screw support portion 323 at two upper and lower positions in a state in which the axial direction thereof coincides with the moving direction (i.e., the up-down direction) of the nozzle 31. One end of the shaft 322a is connected to the motor 324. Further, a nut portion 322b of the ball screw 322 is fixed to an end portion (an end portion opposite to an end portion to which the nozzle 31 is fixed) of the nozzle support portion 321 outside the processing chamber 1.

According to this configuration, the rotational movement of the motor 324 can be converted into the translational movement of the nut portion 322b, and thereby the movement of the nozzle 31 in the up-down direction can be realized by the nozzle support portion 321. The nozzle driving unit 32 controls the rotation of the motor 324 in accordance with a command from the control unit 5, and adjusts the height position of the nozzle 31 with respect to the substrate Tm. Further, according to the above configuration, since the motor 324 can be disposed outside the processing chamber 1, a normal motor can be used as the motor 324, similarly to the motor 222.

The liquid feed pump 33 feeds the solution of the semiconductor material to the nozzle 31. Specifically, the liquid feed pump 33 adjusts the amount of the solution supplied to the nozzle 31 in accordance with a command from the control unit 5, thereby adjusting the amount of the solution discharged from the nozzle 31.

< internal pressure adjuster 4>

The internal pressure adjusting unit 4 adjusts the internal pressure of the processing chamber 1 in accordance with a command from the control unit 5. In the present embodiment, the internal pressure adjusting unit 4 is configured by a pressure increasing/decreasing pump 41, a pressure regulator 42, and a pressure gauge 43 (see fig. 1) for measuring the internal pressure of the processing chamber 1. Specifically, the pressure increasing and reducing pump 41 selectively performs pressurization and depressurization in the processing chamber 1 in accordance with a command from the control unit 5. The pressure regulator 42 adjusts the internal pressure of the processing chamber 1 to a value corresponding to a command from the control unit 5 based on the measurement result of the pressure gauge 43.

< control section 5>

The control unit 5 is configured by a processing device such as CPU (Central Processing Unit) or a microcomputer, and controls various operation units (including the processing chamber 1, the chuck unit 2, the solution supply unit 3, and the internal pressure adjustment unit 4) included in the coating device. Specifically, the control unit 5 reads and executes a program stored in the storage unit 6, and thereby functions as a processing unit that controls each operation unit according to the program. That is, the processing unit is realized by the control unit 5 using software. Thus, various operations required for forming a semiconductor film are realized in the coating apparatus. The program is not limited to the case of being stored in the storage unit 6 in the coating apparatus, and may be stored in a readable state in an external storage medium (such as a flash memory). The processing unit may be realized by hardware by constituting the control unit 5 with a circuit.

Then, after the substrate Tm is fixed to the stage 21 and the process chamber 1 is sealed, the control section 5 performs a control process (hereinafter, referred to as a "coating process") for forming a semiconductor film. Details of the coating process will be described later.

< storage part 6>

The storage unit 6 is constituted by, for example, a flash memory or the like, and stores various information. In the present embodiment, the storage unit 6 stores not only the above-described program but also various information necessary for formation of the semiconductor film (including the height position of the nozzle 31, the discharge amount of the solution, the internal pressure of the processing chamber 1, the setting value of the parameter such as the temperature of the heater, and the like).

[2] Control processing (coating processing) performed by the coating device

Next, the coating process performed by the control unit 5 in the coating apparatus will be described. Fig. 3 is a flowchart showing a flow of the coating process.

When the coating process is started, the control unit 5 controls the internal pressure adjustment unit 4 to adjust the internal pressure of the process chamber 1 (step S11 in fig. 3). Then, the control unit 5 adjusts the drying rate of the solution applied to the surface (application target surface) of the substrate Tm in step S13 described later by adjusting the internal pressure of the processing chamber 1. Specifically, when the drying rate of the solution at normal pressure is lower than the desired rate, the control unit 5 reduces the internal pressure of the processing chamber 1 by reducing the pressure, thereby accelerating the evaporation of the solvent in the solution and increasing the drying rate. On the other hand, when the drying rate of the solution at normal pressure is higher than the desired rate, the control unit 5 increases the internal pressure of the processing chamber 1 by pressurization, thereby suppressing evaporation of the solvent in the solution and reducing the drying rate.

After step S11, the control unit 5 controls the stage driving unit 22 and the nozzle driving unit 32 to set the nozzle 31 at the coating start position on the substrate Tm (step S12 in fig. 3). It should be noted that step S12 may be performed before step S11.

After steps S11 and S12, the control unit 5 controls the stage driving unit 22 and the liquid feed pump 33 to discharge the solution from the discharge port 31a of the nozzle 31 and relatively move the nozzle 31 in the predetermined direction D1 (step S13 in fig. 3). In the present embodiment, the nozzle 31 is moved relative to the stage 21 (i.e., relative to the substrate Tm mounted on the stage 21) by the movement of the stage 21 in the predetermined direction D1. Thus, a liquid product Sp (meniscus) is formed between the discharge port 31a and the substrate Tm, and the liquid product Sp is moved in a predetermined direction D1 along the surface (coating target surface) of the substrate Tm.

Thus, in step S13, the solution applied to the surface (application target surface) of the substrate Tm is dried in order, and the semiconductor material crystal grows. The drying rate of the solution at this time is defined as a desired rate by the internal pressure of the process chamber 1 after adjustment. That is, in the above steps S11 to S13, the control unit 5 adjusts the internal pressure of the processing chamber 1 by the internal pressure adjusting unit 4, and sequentially dries the solution applied to the surface (the surface to be coated) of the substrate Tm at a desired speed to grow the semiconductor material crystal.

Fig. 4 is a conceptual diagram showing a state of the liquid product Sp formed at the time of coating. In step S13, the control unit 5 controls the liquid feed pump 33 to adjust the discharge amount of the solution so that the solution dries immediately after the application (immediately after the discharge of the solution from the discharge port 31a of the nozzle 31) and crystallization of the semiconductor material proceeds, thereby reducing the volume of the liquid product Sp to such an extent that the shape of the liquid product Sp does not become unstable (see fig. 4). Thus, the time for which the coated solution is left in a wet state on the surface of the substrate Tm is shortened as compared with the technique disclosed in patent document 1, for example. Thus, it is not necessary to control the state of wetting of the solution on the surface of the substrate Tm, and thus control required for the coating process can be simplified.

In the case of reducing the internal pressure of the processing chamber 1 by the pressure reduction, the solution in the nozzle 31 is likely to ooze out from the ejection port 31a by the pressure difference to form a liquid product even before the start of the coating. When the coating is started in a state where the solution oozes, the liquid product Sp formed between the ejection port 31a and the substrate Tm increases in the initial stage immediately after the start of the coating by the amount of the solution oozing before the coating. When the liquid bulk Sp increases, drying of the solution becomes slow and crystal growth of the semiconductor material becomes unstable. As a method for solving such a problem, there is a method of sucking the oozed solution into the nozzle 31 by reversely rotating the liquid feed pump 33 before the start of coating. As another example, a method of removing the oozed solution by a liquid absorbing material such as cloth before the start of the application, a method of applying the liquid product Sp to the dummy substrate until the liquid product Sp is reduced, and the like can be cited.

The control unit 5 controls the stage driving unit 22 so that the relative speed of the nozzle 31 is adjusted to a speed corresponding to the crystal growth speed of the semiconductor material crystallized immediately after the application. Specifically, the control unit 5 has data on the relative speed between the internal pressure of the processing chamber 1 and the nozzle 31, and adjusts the relative speed of the nozzle 31 so that the relative speed of the nozzle 31 becomes a speed derived from the adjusted internal pressure and based on the data when the internal pressure of the processing chamber 1 is adjusted (that is, when the crystal growth speed of the semiconductor material is adjusted by the adjustment of the internal pressure). As an example, the correlation data is data obtained by digitizing a correlation between the internal pressure of the processing chamber 1 and the relative speed of the nozzle 31, which satisfies the condition that the degree of crystal orientation of the formed semiconductor film is equal to or higher than a predetermined level. The related data may be stored in the storage unit 6. In this case, the control unit 5 reads out the relevant data from the storage unit 6 and uses the data.

On the other hand, when the relative speed of the nozzle 31 is adjusted before the internal pressure of the processing chamber 1 is adjusted (or when the relative speed is set in advance), the control unit 5 may adjust the internal pressure of the processing chamber 1 in step S11 so that the internal pressure becomes an internal pressure derived from the adjusted or set relative speed and based on the relevant data.

In this way, when one of the internal pressure of the processing chamber 1 and the relative speed of the nozzle 31 is adjusted, the control unit 5 can adjust the other to a value derived from the adjusted value and based on the relevant data. This enables the semiconductor material in the applied solution to be crystallized and grown in the predetermined direction D1 at the same speed as the relative speed of the nozzle 31. That is, the crystal growth of the semiconductor material can be made to follow the nozzle 31 that performs the relative movement.

By making the crystal growth follow the nozzle 31 in this way, it is possible to prevent interruption of the semiconductor film formed or unstable film thickness of the semiconductor film formed. In the case of causing the crystal growth to follow the nozzle 31, most of the solvent in the applied solution evaporates immediately after the nozzle 31 after the application. Therefore, the nozzle 31 serves as a guide to easily guide the evaporated solvent rearward with respect to the moving direction of the nozzle 31. As a result, the evaporation direction of the solvent is easily aligned, and as a result, the crystallization direction is aligned, and the degree of crystal orientation of the semiconductor film is easily improved. In fig. 4, the evaporation direction is indicated by an arrow shown in the rear of the liquid product Sp.

In the present embodiment, the nozzle 31 is disposed so that the longitudinal direction D2 of the discharge port 31a coincides with the width direction of the applied solution (coating film). Therefore, the evaporated solvent is guided by the nozzle 31 and is guided rearward in the entire solution in the width direction. Thereby, the evaporation direction of the solvent is more easily aligned.

During execution of step S13, the control unit 5 determines whether or not the nozzle 31 has reached the coating end position (step S14 in fig. 3), and repeats steps S13 and S14 until it can be determined that "yes" is reached in step S14. When the control unit 5 determines that the solution reaches (yes) in step S14, the control unit stops the discharge of the solution by the console driving unit 22 and the liquid feed pump 33, and moves the nozzle 31 backward upward (step S15 in fig. 3). This completes a series of coating processes.

According to the coating process, the drying rate of the solution applied to the surface (coating target surface) of the substrate Tm can be adjusted by adjusting the internal pressure of the processing chamber 1. Further, by adjusting the drying speed to a desired speed, the crystal orientation degree of the semiconductor film can be improved under control, and as a result, a semiconductor film having a high crystal orientation degree can be stably formed.

Further, by adjusting the relative speed of the nozzle 31 to a speed corresponding to the crystal growth speed of the semiconductor material crystallized immediately after the application, the uniformity of the film thickness of the semiconductor film can be improved at the level of the structural unit of the semiconductor material (i.e., molecular level). According to this embodiment, even when a semiconductor film having a molecular number of about 2 to 5 in the thickness direction is formed, the molecular number in the thickness direction can be aligned over the entire semiconductor film.

In step S11, when the internal pressure of the processing chamber 1 is reduced by the depressurization, the drying speed increases by promoting the evaporation of the solvent in the solution, so that the relative speed of the nozzle 31 to the substrate Tm can be increased. This can increase the formation rate of the semiconductor film. In the case where the applied solutions are sequentially dried to grow crystals of the semiconductor material as in the present embodiment, the relative speed of the nozzle 31 must be significantly reduced to about 0.02mm/sec at normal pressure, as compared with the case where the coating film is formed by full-surface application (for example, 300 mm/sec) in a wet state. Therefore, by slightly increasing the relative speed of the nozzle 31, the formation speed of the semiconductor film can be remarkably increased.

In step S11, the internal pressure of the processing chamber 1 may be reduced by the internal pressure adjusting unit 4 until the processing chamber 1 is in a vacuum state. By setting the inside of the processing chamber 1 to a vacuum state, the shaking of the solvent evaporated from the applied solution can be suppressed. As a result, the movement direction (i.e., the evaporation direction) of the evaporated solvent is more easily aligned, and as a result, the crystallization direction is easily aligned throughout the formed semiconductor film.

[3] Modification examples

[3-1] first modification example

The coating apparatus may further include a heater (not shown) for heating the stage 21 and the nozzle 31. In this configuration, the control unit 5 adjusts the temperature of the solution by controlling the heater in addition to the drying rate of the solution by using the internal pressure of the processing chamber 1, and the drying rate of the solution can be adjusted by adjusting the temperature. Specifically, when the drying rate of the solution at normal temperature is lower than the desired rate, the control unit 5 increases the temperature of the solution by heating, thereby accelerating the evaporation of the solvent in the solution and increasing the drying rate.

The coating apparatus may further include a cooler (not shown) for cooling the stage 21 and the nozzle 31. In this configuration, the control unit 5 adjusts the temperature of the solution by controlling the cooler in addition to the drying rate of the solution by using the internal pressure of the processing chamber 1, and the drying rate of the solution can be adjusted by adjusting the temperature. Specifically, when the drying rate of the solution at normal temperature is higher than the desired rate, the control unit 5 can reduce the drying rate by cooling to reduce the temperature of the solution, thereby suppressing evaporation of the solvent in the solution.

In the above two examples, the control unit 5 may have data relating to the temperature of the solution (or the temperature of the nozzle 31) and the relative speed of the nozzle 31. When one of the temperature of the solution and the relative speed of the nozzle 31 is adjusted, the control unit 5 may adjust the other to a value derived from the adjusted value based on the relevant data. This allows the drying rate of the solution to be adjusted by two parameters, that is, the internal pressure of the processing chamber 1 and the temperature of the solution, and thus allows higher-precision control.

In addition, when the drying rate is to be adjusted only by the temperature of the solution, the temperature of the solution must be increased to a temperature at which the semiconductor material can be degraded, and when the drying rate is to be adjusted only by the temperature of the solution, the drying rate may not be adjusted to a desired rate. In this case, by adjusting the internal pressure of the combination processing chamber 1, the drying rate of the solution can be adjusted to a desired rate while limiting the temperature rise of the solution.

[3-2] second modification example

When the relative speed of the nozzle 31 at the time of coating is set to a constant relative speed V0, there may be a phenomenon (first phenomenon) in which the film thickness of the formed semiconductor film is reduced from the desired film thickness at the coating start position and gradually increased from there to be stabilized. Alternatively, there is a case where the film thickness of the semiconductor film is larger than the desired film thickness at the coating start position and gradually decreases from the position to stabilize the film thickness (second phenomenon).

Therefore, in the case where these phenomena occur, the control unit 5 can control the relative speed of the nozzle 31 by controlling the nozzle driving unit 32 as described below. That is, the control unit 5 relatively moves the nozzle 31 at the first relative velocity V1 for a predetermined period from the start of the application of the solution by the nozzle 31. Here, the first relative speed V1 is a speed at which the film thickness of the semiconductor film is adjusted to a desired film thickness from the coating start position. Specifically, when the first phenomenon occurs, the first relative velocity V1 is set to a velocity smaller than the constant relative velocity V0. On the other hand, when the second phenomenon occurs, the first relative velocity V1 is set to a velocity greater than the constant relative velocity V0.

Then, the control unit 5 relatively moves the nozzle 31 at a second relative velocity V2 different from the first relative velocity V1. As an example, the second relative velocity V2 is set to a velocity equal to the constant relative velocity V0. The control unit 5 may gradually increase or decrease the first relative velocity V1 so as to become the second relative velocity V2 when the predetermined period has elapsed.

By such control, the relative speed of the nozzle 31 immediately after the start of coating can be reduced or increased according to the above-described phenomenon (first phenomenon or second phenomenon) generated at the coating start position. Thus, even immediately after the start of the application, the semiconductor material can be crystallized and grown to a desired film thickness, and as a result, the film thickness can be made uniform throughout the semiconductor film to be formed.

The control unit 5 may change various parameters such as the internal pressure of the processing chamber 1 and the temperature of the solution, so as to improve the state of the semiconductor film formed, not only by the relative speed of the nozzle 31 during the coating process.

[3-3] third modification example

The coating apparatus may further include a liquid feed pump 33 as a main pump, and a detachable slave pump (such as a diaphragm pump) that can be driven by the liquid feed pump 33. Thus, when the discharge amount is increased, the solution is supplied to the nozzle 31 by the liquid feed pump 33 in a state in which the slave pump is removed, and when the discharge amount is reduced, the solution can be supplied to the nozzle 31 by the slave pump by attaching the slave pump. That is, the pump can be used separately according to the application.

In addition, according to this configuration, a pump (diaphragm pump or the like) that does not require a heat countermeasure for heating by a heater or the like is used as the slave pump, and therefore, the temperature of the solution can be raised by heating only the slave pump without heating the main pump. In this case, since it is not necessary to apply a thermal countermeasure to the main pump, a normal pump driven by a motor or the like to which no thermal countermeasure is applied may be used as the main pump.

[3-4] fourth modification example

In the coating apparatus described above, the relative movement of the nozzle 31 with respect to the stage 21 is not limited to the movement of the stage 21 without moving the nozzle 31, and may be realized by moving the nozzle 31 without moving the stage 21. The relative movement of the nozzle 31 may be achieved by moving both the stage 21 and the nozzle 31. The relative movement of the nozzle 31 is not limited to one-dimensional movement, and may be two-dimensional movement along the placement surface 21a of the stage 21.

[3-5] fifth modification example

The coating apparatus may be an apparatus that performs only one of pressure reduction and pressure increase on the processing chamber 1. The nozzle 31 is not limited to a slit nozzle, and may be appropriately changed according to the shape of the semiconductor film to be formed.

In the coating process, the various parameters may be controlled based on the correlation by not only controlling the various parameters based on the correlation between the internal pressure of the process chamber 1 (or the temperature of the solution) and the relative speed of the nozzle 31 but also controlling the various parameters based on the correlation by providing the correlation between two parameters selected from the internal pressure of the process chamber 1, the temperature of the solution (or the temperature of the nozzle 31), the drying speed of the solution, the supersaturation degree of the solution, the crystal growth speed, the relative speed of the nozzle 31, and the like.

[3-6] other modifications

The coating apparatus capable of adjusting the internal pressure of the processing chamber 1 can be applied to a case where the coating film is formed by applying the entire surface in a wet state, and thus the film thickness can be made uniform over the entire coating film. Such a coating apparatus is suitable for forming a functional film (color filter, conductive film, polyimide film, etc.) preferably having a uniform film thickness.

It should be considered that the description of the embodiments above is illustrative in all respects and not restrictive. The scope of the invention is disclosed not by the embodiments described above but by the claims. The scope of the present invention is intended to include all modifications within the meaning and scope equivalent to the claims.

Description of the reference numerals

1. Treatment chamber

2. Chuck segment

3. Solution supply unit

4. Internal pressure adjusting part

5. Control unit

6. Storage unit

11A, 11B side wall

11C roof

21. Bench

21a mounting surface

21b back face

22. Stage driving unit

31. Nozzle

31a ejection port

32. Nozzle driving part

33. Liquid feeding pump

41. Pressure-increasing and reducing pump

42. Voltage regulator

43. Pressure gauge

210. Guide rail

221. Ball screw

221a shaft portion

221b nut portion

222. Motor with a motor housing having a motor housing with a motor housing

321. Nozzle support

322. Ball screw

322a shaft portion

322b nut portion

323. Screw rod supporting part

324. Motor with a motor housing having a motor housing with a motor housing

D1 In a prescribed direction

D2 In the length direction

Sp dropsy

Tm substrate

V0 constant relative velocity

V1 first relative speed

V2 second relative velocity.

Claims

1. A coating device is provided with:

a processing chamber;

a nozzle that moves relatively along a coating target surface in the processing chamber and applies a solution of a crystalline material to the coating target surface;

an internal pressure adjusting unit configured to adjust an internal pressure of the processing chamber; and

And a control unit configured to, when the solution is applied through the nozzle, adjust the internal pressure of the processing chamber by the internal pressure adjustment unit, and sequentially dry the solution applied to the surface to be coated, thereby growing the crystal material crystals.

2. The coating apparatus according to claim 1, wherein,

the control unit may be configured to reduce the internal pressure of the processing chamber by the internal pressure adjusting unit until the processing chamber is in a vacuum state when the solution is applied through the nozzle.

3. The coating apparatus according to claim 1, wherein,

the control section has data on the relationship between the internal pressure of the processing chamber and the relative speed of the nozzle,

when one of the internal pressure of the processing chamber and the relative speed of the nozzle is adjusted, the control unit adjusts the other to a value derived from the adjusted value of the one and based on the correlation data.

4. The coating apparatus according to claim 3, wherein,

the correlation data is obtained by digitizing a correlation between the internal pressure of the processing chamber and the relative velocity of the nozzle, which satisfies a condition that the degree of crystal orientation of the formed crystal film is equal to or higher than a predetermined level.

5. The coating apparatus according to claim 2, wherein,

6. The coating apparatus according to claim 5, wherein,

7. The coating apparatus according to any one of claims 1 to 6, wherein,

the nozzle is a slit nozzle having a slit-shaped ejection orifice,

the longitudinal direction of the ejection port is a direction parallel to the surface to be coated and perpendicular to the direction in which the nozzle moves relative to each other.

8. The coating apparatus according to any one of claims 1 to 6, wherein,

the control unit relatively moves the nozzle at a first relative speed for a predetermined period from the start of the application of the solution by the nozzle,

thereafter, the control unit relatively moves the nozzle at a second relative speed different from the first relative speed.

9. The coating apparatus according to any one of claims 1 to 6, wherein,

the crystalline material is a semiconductor material.

10. A coating method, wherein,

the internal pressure of a processing chamber used for forming a crystal film is adjusted,

a nozzle is relatively moved along the surface to be coated in the processing chamber to apply a solution of a crystalline material to the surface to be coated,

thereby, the solution applied to the surface to be coated is sequentially dried to crystallize and grow the crystalline material.