JP2007134434A - Method of depositing coating film and its apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of depositing a coating film and its apparatus which can flatten a uniform and very precise coating film without using a heavy load process such as chemical mechanical polishing. <P>SOLUTION: This is a film deposition method for depositing a coating film on the surface of a semiconductor wafer W by supplying a coating liquid onto the semiconductor wafer W of a processed substrate having an unevenness on the surface. In this film deposition method, the wafer W formed with the coating film T of the coating liquid is placed in a solvent gas atmosphere, and then the solvent gas atmosphere is sucked. After the solvent concentration of the coating film becomes the same as the concentration of a selected coating liquid for supplement, the wafer W and a nozzle 10 for supplying the selected coating liquid are relatively moved in parallel to each other to supply the selected coating liquid from the nozzle 10 into the concave portions which are memorized in advance as those which need to be replenished with the coating liquid. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method and apparatus for forming a coating film, and more specifically, for example, a coating film for coating a coating liquid on a substrate such as a semiconductor wafer or an LCD substrate, and forming the coating film on the substrate surface. The present invention relates to a film forming method and an apparatus therefor.

  2. Description of the Related Art Conventionally, a technology for multilayer wiring on a substrate has been adopted as semiconductor devices are highly integrated, and a silicon oxide film called SOG (Spin On Glass) is used as a film for insulating wirings in a multilayer wiring, that is, circuit patterns. System glass is used.

  The SOG film is formed by generally applying a glass component dissolved in an organic solvent on a substrate by spin coating, followed by baking by heat treatment such as drying, baking, curing, etc. Is a method of forming a film by bonding.

  By the way, since the uneven circuit pattern is formed on the surface of the substrate, when the usual spin coating method / thermal drying is performed, the shape unevenness of the film surface corresponding to the uneven shape of the unevenness occurs, and the subsequent process Cause trouble. For example, in the case of lithography, there are problems in that various problems such as deterioration in line width (CD) due to different depths of focus and an increase in level difference due to film stacking occur.

  Therefore, it is necessary to flatten the coating film. As a method for flattening the coating film, after the coating film is cured by heat treatment, a polishing liquid containing mechanical abrasive particles and chemical abrasive particles is dropped onto the surface of the polishing cloth that is an abrasive member. A chemical mechanical polishing (CMP) technique is known in which a surface is pressed against a coating film on a substrate to remove a part of the coating film.

  As another planarization method that does not go through a high-load process such as CMP, a coating liquid is supplied to the substrate surface having an uneven surface, and the coating film is thinly spread on the surface of the substrate with a scanner plate. In addition, an application method (apparatus) that presses evenly with air pressure from a slit-like nozzle is known (see, for example, Patent Document 1).

As another means, a coating method (apparatus) is known in which a coating liquid is supplied to the surface of a substrate and then a gas containing solvent vapor is supplied to make the coating film thin and uniform (for example, Patent Documents). 2).
Japanese Patent Laid-Open No. 7-47324 (Claims, FIGS. 1, 2 and 4) JP 11-329938 A (paragraph number 0142, FIG. 8, FIG. 13)

  However, in the technique described in the former, that is, JP-A-7-47324, since air is blown toward the coating solution, the coating solution volatilizes and hardens, resulting in a decrease in fluidity. There was a problem that uniformization could not be achieved sufficiently.

  In the latter technique, that is, in the technique described in Japanese Patent Application Laid-Open No. 11-329938, the solvent vapor is sent to the coating liquid, so that the volatilization of the coating liquid can be suppressed as compared with the former. As with the former, the coating film volatilizes and hardens due to the influence, and as a result, the fluidity decreases. Therefore, even in this technique, there is a problem that the coating film cannot be sufficiently uniformized.

  In particular, there is a possibility that the coating film becomes non-uniform when there is a recess having a width wider than the unevenness of the circuit pattern, such as a dicing line.

  The present invention has been made in view of the above circumstances, and a coating film forming method and apparatus capable of flattening a uniform and highly accurate coating film without going through a high load process such as CMP. Is intended to provide.

  In order to solve the above-mentioned problem, this coating film forming method is a film forming method in which a coating liquid is supplied to a substrate to be processed having an uneven surface, and the coating film is formed on the surface of the substrate to be processed. In the first aspect of the present invention, the substrate to be processed on which the coating film of the coating solution is formed is placed in a solvent gas atmosphere, and the solvent gas atmosphere is sucked to replenish the solvent concentration and replenishment of the coating film. After the concentration of the selective coating liquid for use matches, the substrate to be processed and the nozzle for supplying the selective coating liquid are relatively moved in parallel, and the above-described recesses that require replenishment of the coating liquid on the substrate to be processed are A selective coating liquid is supplied from a nozzle.

  In the method for forming a coating film according to claim 1, it is preferable to maintain a state where the solvent concentration of the coating film and the concentration of the selective coating liquid coincide with each other and supply the selective coating liquid from the nozzle in this state (claim). Item 2).

  According to a third aspect of the present invention, there is provided a coating step of supplying a coating liquid to a substrate to be processed in which the surface unevenness state is stored in advance and forming a coating film on the surface of the substrate to be processed; A step of carrying the formed substrate to be processed into a processing chamber cut off from the outside air; a step of supplying a solvent gas into the processing chamber to make the processing chamber a solvent gas atmosphere; and aspiration of the solvent gas atmosphere. A step of maintaining a state where the solvent concentration of the coating film and the concentration of the selective coating liquid for replenishment coincide with each other, the relative movement of the substrate to be treated and the nozzle for supplying the selective coating liquid, And a step of supplying a selective coating liquid from the nozzle to a recess that requires replenishment of the coating liquid on the substrate to be processed.

  According to a fourth aspect of the present invention, there is provided a coating step of supplying a coating liquid to a substrate to be processed in which the surface unevenness state is stored in advance and forming a coating film on the surface of the substrate to be processed; Carrying the formed substrate to be processed into a processing chamber cut off from the outside air; supplying a solvent gas into the processing chamber to make the processing chamber a solvent gas atmosphere; and suctioning the solvent gas atmosphere. Detecting the solvent concentration of the coating film by the solvent concentration detecting means, and maintaining the state where the detected solvent concentration and the concentration of the selective coating solution for replenishment match, and for supplying the substrate to be treated and the selective coating solution And a step of relatively moving the nozzle in parallel to supply a selective coating solution from the nozzle to a recess that needs to be replenished with the coating solution stored in advance on the substrate to be processed.

  5. The method for forming a coating film according to claim 1, wherein the selective coating solution preferably contains a solvent having a concentration lower than the solvent concentration of the coating solution (claim 5).

  The coating film forming apparatus of the present invention is based on a film forming apparatus that supplies a coating liquid to a substrate to be processed having an uneven surface, and forms the coating film on the surface of the substrate to be processed. The invention according to claim 6 is a processing chamber for storing the substrate to be processed on which the coating film of the coating solution is formed from outside air and holding means for holding the substrate to be processed disposed in the processing chamber. A solvent gas supply means for supplying a solvent gas into the processing chamber, a pressure detection means for detecting the pressure in the processing chamber, a pressure adjusting means for adjusting the pressure in the processing chamber, and a surface of the substrate to be processed. A selective coating liquid supply nozzle that supplies a selective coating liquid for replenishment set to a predetermined concentration, a moving means that relatively translates the holding means and the nozzle, an uneven state of the substrate to be processed, and the above Stores the solvent concentration of the coating film, Control means for controlling the position of the nozzle after the concentration of the solvent and the concentration of the selective coating liquid match based on the stored information and the information from the pressure detecting means. .

  According to a seventh aspect of the present invention, there is provided a processing chamber for storing a substrate to be processed on which a coating film of the coating solution is formed from outside air, and a processing chamber disposed in the processing chamber and formed on the substrate to be processed. A solvent concentration detecting means for detecting the solvent concentration of the coated film, a holding means disposed in the processing chamber for holding the substrate to be processed, a solvent gas supply means for supplying a solvent gas into the processing chamber, A pressure adjusting means for adjusting the pressure in the processing chamber, a selective coating liquid supply nozzle for supplying a selective coating liquid for replenishment set to a predetermined concentration on the surface of the substrate to be processed, and the holding means and the nozzle relative to each other. And a moving means that moves in parallel, and stores the uneven state of the substrate to be processed, and based on the stored information and the information from the solvent concentration detecting means, the concentration of the solvent and the concentration of the selective coating liquid match. After the above And a control means for controlling the position of the nozzle.

  In the first aspect of the present invention, in the state where the substrate to be processed on which the coating film of the coating liquid is formed is placed in a solvent gas atmosphere, the solvent of the coating film is provided from the nozzle to the recess that requires replenishment of the coating liquid on the substrate to be processed. By supplying the selective coating solution having the same concentration as the concentration, the coating film can be flattened while the viscosity of the coating solution is maintained without volatilizing and curing the coating solution. In this case, the coating film is flattened in a stable atmosphere by maintaining the state where the solvent concentration of the coating film matches the concentration of the selective coating liquid and supplying the selective coating liquid from the nozzle in this state. (Claim 2).

  In the inventions of claims 3 and 6, after supplying the coating liquid to the substrate to be processed and forming the coating film, the substrate to be processed is carried into the processing chamber and placed in a solvent gas atmosphere. By supplying a selective coating solution of the same concentration as the solvent concentration of the coating film from the nozzle to the recesses that require replenishment of the coating solution on the substrate to be processed, the viscosity of the coating solution is maintained without volatilizing and curing the coating solution. In this state, the coating film can be flattened.

  In the inventions of claims 4 and 7, after supplying the coating liquid to the substrate to be processed and forming the coating film, the substrate to be processed is carried into the processing chamber and placed in a solvent gas atmosphere. The solvent concentration detection means detects the solvent concentration of the coating film and, based on the detected information, supplies a selective coating solution having the same concentration as the solvent concentration of the coating film from the nozzle to the recess that requires replenishment of the coating solution on the substrate to be processed. By doing so, the coating film can be flattened while the viscosity of the coating solution is maintained without volatilizing and curing the coating solution.

  In the invention according to claim 5, since the selective coating solution contains a solvent having a concentration lower than the solvent concentration of the coating solution, the coating solution applied in the coating step is dried with the passage of time thereafter to obtain a solvent concentration. Accordingly, the solvent concentration of the coating film and the concentration of the selective coating solution can be made to coincide with each other when the thickness of the coating film becomes thinner.

  Since the present invention is configured as described above, the following effects can be obtained.

  (1) According to the first aspect of the present invention, the coating film can be flattened while the viscosity of the coating solution is maintained, without volatilizing and curing the coating solution. In this case, the coating film is flattened in a stable atmosphere by maintaining the state where the solvent concentration of the coating film matches the concentration of the selective coating liquid and supplying the selective coating liquid from the nozzle in this state. (Claim 2).

  (2) According to the invention described in claims 3 and 6, after the coating liquid is supplied to the substrate to be processed to form the coating film, the substrate to be processed is carried into the processing chamber and placed in a solvent gas atmosphere. In this state, since the selective coating solution having the same concentration as the solvent concentration of the coating film is supplied from the nozzle to the recesses that require replenishment of the coating solution on the substrate to be processed, the coating solution is volatilized as in (1) above. The coating film can be flattened in a state where the viscosity of the coating solution is maintained without being cured.

  (3) According to the inventions of claims 4 and 7, the solvent concentration of the coating film formed on the substrate to be processed immediately before the processing is detected by the solvent concentration detecting means, and based on the detection information, Since the selective coating solution having the same concentration as the solvent concentration of the coating film is supplied from the nozzle to the concave portion that needs to be replenished with the coating solution, in addition to the above (1) and (2), the coating film is flattened more reliably. be able to.

  (4) According to the invention of claim 5, the coating liquid applied in the coating process is dried with the passage of time thereafter, and the solvent concentration of the coating film corresponds to the case where the solvent concentration becomes thin. Since the concentration of the selective coating liquid can be matched, in addition to the above (1) to (3), the coating film formed on the substrate to be processed and the coating film formed by the supplemental selective coating liquid Can be homogenous.

  DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the best embodiment of the present invention will be described in detail with reference to the accompanying drawings. Here, a case where the film forming apparatus according to the present invention is applied to an SOG film forming apparatus for a semiconductor wafer will be described.

First Embodiment FIG. 1 is a schematic sectional view showing a first embodiment of the film forming apparatus.

  In the film forming apparatus, a coating unit 1 for forming a coating film of an SOG liquid, for example, polysilazane, which is a coating liquid, is formed on a semiconductor wafer W (hereinafter referred to as wafer W) which is a substrate to be processed having an uneven surface, and a coating film is formed. And a film forming unit 2 for flattening the coating film on the wafer W.

  The coating unit 1 includes a coating processing chamber 3 that stores a wafer W that is transported by a transport arm (not shown), and a rotation holding unit that is disposed in the coating processing chamber 3 and that holds the wafer W and rotates it horizontally. And a coating solution supply nozzle 5 for dropping (supplying) a coating solution, for example, an SOG solution, onto the surface of the wafer W.

  In the coating unit 1 configured as described above, the coating liquid is dropped from the coating liquid supply nozzle 5 onto the surface of the wafer W accommodated in the coating processing chamber 3, and the spin chuck 4 is rotated to rotate the wafer. A coating film of the coating solution is formed on the surface of W.

  The film forming unit 2 includes a processing chamber 6 that houses a wafer W on which a coating film is formed from outside air, and a mounting plate that is disposed in the processing chamber 6 and holds the wafer W. 7, a solvent gas supply means 8 for supplying a solvent gas into the processing chamber 6, a pressure adjusting means 9 for adjusting the pressure in the processing chamber 6, and a replenishment set to a predetermined concentration on the surface of the wafer W A selective coating liquid supply nozzle 10 (hereinafter referred to as a nozzle 10) for supplying or dropping a selective coating liquid, a moving means 20 for relatively moving the mounting plate 7 and the nozzle 10 in parallel, and a pressure in the processing chamber 6 are set. Pressure sensor 30 that is a pressure detecting means to detect, information on the state of the concavity and convexity of wafer W stored in advance, that is, step opening ratio of the concavity, step depth, solvent concentration of the coating film, etc., and detection signal from pressure sensor 30 (Information) After the concentration of the selected application liquid medium concentration matched, is mainly constituted by a controller 40 which is formed by the control means, for example, a central processing unit for controlling the position of the nozzle 10 (CPU). The controller 40 is configured to control the solvent gas supply means 8 and the pressure adjustment means 9 based on the detection signal detected by the pressure sensor 30 to control the inside of the processing chamber 6 to a predetermined pressure.

  The processing chamber 6 includes a fixed base portion 6a and a box-shaped lid body 6b that can be opened and closed by a lifting means (not shown) with respect to the fixed base portion 6a. Instead of configuring the processing chamber 6 with the fixed base portion 6a and the lid 6b that can be raised and lowered, a loading / unloading port for the wafer W may be provided on the side wall, and the loading / unloading port may be opened and closed by a shutter.

  The solvent gas supply means 8 is a vaporizer having a solvent gas generation function, which is connected to the other end of a supply pipe 8a whose one end is connected to a supply port 6c provided at one end of the lid 6b of the processing chamber 6. 80. The supply pipe 8a is provided with an open / close valve V1 capable of numerically adjusting the opening degree, and the open / close valve V1 can be opened and closed based on a control signal from the controller 40.

  The pressure adjusting means 9 is connected to an exhaust port 6d provided on the other end side of the lid 6b of the processing chamber 6 via an exhaust pipe 9a, and an exhaust pipe 9a. For example, a butterfly type opening / closing valve V2 capable of adjusting a numerical opening amount is opened and closed based on a control signal from the controller 40. By the pressure adjusting means 9 configured in this way, the inside of the processing chamber 6 is set to a predetermined pressure, for example, 500 Pa (Pascal) at which the degree of drying of the coating liquid is 50 wt%.

  The mounting plate 7 is configured to suck and hold the wafer W, and is provided with, for example, three through holes (not shown) concentrically, and passes through each through hole (not shown). The support pin is held by the holding member, and the support pin is configured to be able to appear and retract on the surface of the mounting plate 7 by driving the support pin lifting cylinder.

  The mounting plate 7 is slidably mounted on two rails 7 a extending in the Y direction laid on the upper surface of the fixed base portion 6 a of the processing chamber 6, and constitutes the moving means 20 in the Y direction. The moving mechanism 20Y can move in the horizontal Y direction.

  The nozzle 10 is located above the mounting plate 7, extends in the X direction orthogonal to the rail, and both ends are rotatably disposed on opposite side walls of the lid of the processing chamber 6, for example, a ball screw mechanism The nozzle 10 can be moved in the horizontal X direction by the X-direction moving mechanism 20X. In this case, the X-direction moving mechanism 20X includes a ball screw shaft 21 that is horizontally mounted on the lid 6b of the processing chamber 6, and a drive motor 22 that rotates the ball screw shaft 21 so as to be rotatable forward and backward. . The nozzle 10 is slidably fitted to a ball screw shaft 21 of the X-direction moving mechanism 20X and a guide shaft (not shown) parallel to the ball screw shaft 21.

  Therefore, the nozzle 10 moves in the X direction by driving the drive motor 22 of the X direction moving mechanism 20X forward and reverse, and the mounting plate 7 moves in the Y direction by the Y direction moving mechanism 20Y. The nozzle 10 can be moved to any position in the horizontal X and Y directions with respect to the wafer W placed and held on the plate 7. The moving means, that is, the X-direction moving mechanism 20X and the Y-direction moving mechanism 20Y may be formed by a linear drive mechanism other than the ball screw mechanism, a belt drive mechanism using a timing belt or a pulley, or the like.

  In the above description, the nozzle 10 is moved in the X direction and the placement plate 7 is moved in the Y direction. However, the nozzle 10 is moved in the Y direction, and the placement plate 7 is moved in the X direction. Alternatively, either the nozzle 10 or the mounting plate 7 may be fixed and the other may be moved in the X and Y directions.

  The nozzle 10 is connected to a selective coating liquid storage tank 12 through a flexible supply pipe 11 so as to follow the movement of the nozzle 10. The supply pipe 11 is provided with an open / close valve V3, which can be opened and closed based on a control signal from the controller 40. The selective coating solution stored in the selective coating solution storage tank 12 is a chemical solution having a known concentration containing a solvent having a concentration lower than that of the coating solution. The reason why the selective coating solution contains a solvent having a concentration lower than the solvent concentration of the coating solution is that the coating solution applied in the coating process is dried over time and the solvent concentration becomes thin. This is because the solvent concentration of the coating film and the concentration of the selective coating solution are made to coincide with each other.

  Using the nozzle 10 configured as described above, as shown in FIG. 2A, replenishment of the coating liquid in the wafer W stored in advance with respect to the wafer W on which the coating film T of the coating liquid is formed. The selective coating liquid L having the same concentration as the solvent concentration of the coating film T is dropped (supplied) into the concave portion Wa where the coating film T is required (see FIG. 2B), so that the concave portion Wa has the same concentration as the solvent concentration of the coating film T. A coating film T of the selective coating liquid L is formed, and the surface of the coating film T is flattened (see FIG. 2C). In addition, the nozzle hole of the nozzle 10 may be one or a plurality or a slit shape.

  Next, the operation mode of the film forming apparatus according to the present invention configured as described above will be described with reference to the flowcharts shown in FIGS.

  At the time of processing, information such as the concavo-convex state in the wafer W to be processed, that is, the step opening ratio of the concave portion, the step depth, and the solvent concentration of the coating film is obtained in advance and stored in the controller 40. In this case, the information on the concavo-convex state of the wafer W can be acquired by, for example, a mask pattern, a recipe for a stepper, or image capture of the wafer W. Further, the solvent concentration of the coating film can be obtained from the relationship of the atmospheric pressure that determines the degree of drying of the stock solution of the coating solution.

  First, an unprocessed wafer W is carried into the coating unit 1 by a transfer arm (not shown) and delivered to the spin chuck 4. Then, the coating liquid is dropped from the coating liquid supply nozzle 5 onto the surface of the wafer W, and the spin chuck 4 is rotated to form a coating film of the coating liquid on the surface of the wafer W (coating process: Step 3- 1).

  Next, the transfer arm (not shown) receives the wafer W on which the coating film is formed, and carries the wafer W into the processing chamber 6 of the film forming unit 2 (wafer carry-in process: step 3-2). At this time, the lid body 6b constituting the processing chamber 6 is raised and the lid body 6b is lowered while the wafer W is placed on the placement plate 7, thereby blocking the processing chamber 6 from the outside air. Next, the on-off valve V1 of the solvent gas supply means 8 is opened based on a control signal from the controller 40, and the solvent gas generated by the vaporizer 80 is supplied (purged) into the processing chamber 6 (solvent gas). Supply process: Step 3-3). The pressure in the processing chamber 6 that is changed by the supply (purging) of the solvent gas is detected by the pressure sensor 30. When the pressure in the processing chamber 6 becomes equal to or higher than a predetermined pressure, the on-off valve V2 is based on a control signal from the controller 40. Is opened at a predetermined opening and the inside of the processing chamber 6 is depressurized, and when the predetermined drying degree suitable for the film forming process is 50 wt% and the predetermined pressure is 500 Pa, for example, the concentration of the coating film and the concentration of the selected coating liquid Therefore, this state is maintained (pressure reduction / pressure maintaining step: step 3-4).

  In a state where the concentration of the coating film and the concentration of the selective coating solution coincide with each other, the nozzle 10 and the wafer W held by the mounting plate 7 are relatively translated based on a control signal from the controller 40 to move the nozzle 10. As shown in FIG. 2 (b), it is positioned above the recess Wa that needs to be replenished with the coating liquid, and the on-off valve V 3 is opened based on the control signal from the controller 40, and the selective coating liquid is dropped from the nozzle 10. (Supply) and flatten the coating film T other than the concave portion Wa and the concave portion Wa (selective coating step: step 3-5). In this selective coating process, the nozzle 10 is moved (scanned) in the groove direction of the concave portion Wa, and the selective coating liquid is similarly dropped (supplied) from the nozzle 10 to flatten the coating film T.

  After flattening the coating film on the surface of the wafer W by the selective coating process, the on-off valves V1 and V3 are closed, the opening of the on-off valve V2 of the pressure adjusting means 9 is adjusted, and the inside of the processing chamber 6 is decompressed to, for example, 50 Pa. Thereafter, it is opened to the atmosphere (decompression / atmospheric release step: step 3-6). Then, after the cover 6b is opened (raised), or with the support pins raised along with the raising and pushing the wafer W above the surface of the mounting plate 7, the transfer arm (not shown) holds the wafer W. Receive and unload (wafer unloading step: step 3-7).

Second Embodiment FIG. 4 is a schematic sectional view showing a second embodiment of the film forming apparatus according to the present invention.

  In the second embodiment, a coating film concentration detection unit is provided in the film forming unit, and the film forming process is performed by detecting the concentration of the coating film formed on the wafer immediately before the processing.

  In the film forming apparatus according to the second embodiment, a processing chamber 6A that accommodates the wafer W by blocking it from the outside air has a measurement region 61 and a processing region 62, and is disposed in the measurement region 61 in the processing chamber 6A. The point that the concentration detecting means 50 for detecting the concentration of the coating film T formed on the wafer W is provided, and the nozzle 10A is fixed, and the mounting plate 7A is moved in the horizontal X and Y directions. This is different from the first embodiment. In addition, since the other part in 2nd Embodiment is the same as 1st Embodiment, the same code | symbol is attached | subjected to the same part and description is abbreviate | omitted.

  In the second embodiment, the processing chamber 6A is provided with a carry-in port 6e for the wafer W on one of the opposing side walls, and a carry-out port 6f on the other side. In addition, shutters 6g and 6h that are lifted and lowered by a lifting mechanism (not shown) are disposed at the carry-in port 6e and the carry-out port 6f, respectively, so as to be opened and closed.

  Further, the concentration detecting means 50 is formed by, for example, a refractive index measuring device, and detects and analyzes the average of the refractive index of the coating film on the flat portion formed on the wafer W at a plurality of locations, for example, 9 points with respect to the diameter. By doing so, the solvent concentration of a coating film can be calculated | required. Information detected by the density detecting means, that is, the refractive index measuring device 50 is transmitted to the controller 40 and stored therein.

  The mounting plate 7A is a sliding plate 7c slidably mounted on a plurality of, for example, four rails 7b parallel to each other extending in the Y direction and laid on the fixed base portion 6a of the processing chamber 6. It is slidably placed on a rail 7d extending in the X direction and laid on the upper surface. Then, the mounting plate 7A can be translated in the horizontal X and Y directions with respect to the nozzle 10A by the X direction moving mechanism 20X and the Y direction moving mechanism 20Y which are moving means, for example, a ball screw mechanism or a linear drive mechanism. It is configured.

  Next, the operation | movement aspect of the film-forming apparatus of 2nd Embodiment is demonstrated with reference to the flowchart shown in FIG.4 and FIG.5.

  At the time of processing, information such as the concavo-convex state of the wafer W to be processed, that is, the step opening ratio of the concave portion, the step depth, and the like is obtained in advance and stored in the controller 40. In this case, as in the first embodiment, the information on the uneven state of the wafer W can be acquired by, for example, a mask pattern or a stepper recipe, or by capturing an image of the wafer W.

  First, an unprocessed wafer W is loaded into the coating unit 1 by a transfer arm (not shown) and delivered to a spin chuck (not shown). Then, a coating liquid is dropped on the surface of the wafer W from a coating liquid supply nozzle (not shown), and the spin chuck is rotated to form a coating film of the coating liquid on the surface of the wafer W (application process: Step 5-1).

  Next, the transfer arm (not shown) receives the wafer W on which the coating film is formed, and carries the wafer W into the measurement region 61 in the processing chamber 6A of the film forming unit 2 (wafer carry-in process: step 5-). 2). After the wafer W is placed on the placement plate 7A, the transfer arm is retracted from the processing chamber 6A, the shutter 6g is closed, and the processing chamber 6A is shut off from the outside air.

  Next, the on-off valve V1 of the solvent gas supply means 8 is opened based on a control signal from the controller 40, and the solvent gas generated by the vaporizer 80 is supplied (purged) into the processing chamber 6A. Further, the opening / closing valve V2 of the pressure adjusting means 9 is controlled to open and close based on a control signal from the controller 40, and the solvent gas atmosphere is sucked so that the inside of the processing chamber 6 has a predetermined drying degree suitable for the film forming process, for example, 50 wt%. The pressure is set to 500 Pa, for example. In this process, the refractive index measuring device 50 detects the refractive index of the coating film on the flat portion of the wafer W, transmits the detected information to the controller 40, and determines the solvent concentration of the coating film obtained from the detected refractive index. When the concentration of the selected coating solution matches, the pressure in the processing chamber 6 is maintained (concentration measurement step: step 5-3). Further, when the solvent concentration of the coating film matches the concentration of the selective coating solution, the mounting plate 7A moves in the X direction and moves the wafer W to the processing region 62 (wafer processing unit moving step: step 5-4). ).

  Next, the nozzle 10A and the wafer W held by the mounting plate 7A are relatively translated on the basis of a control signal from the controller 40, so that the nozzle 10A is applied as shown in FIG. Is positioned above the concave portion Wa that needs to be replenished, the on-off valve V3 is opened based on a control signal from the controller 40, and a selective coating liquid is dropped (supplied) from the nozzle 10A, so that the portions other than the concave portion Wa and the concave portion Wa. The coating film T is flattened (selective coating process: step 5-5). In this selective coating step, the nozzle 10A is moved (scanned) in the groove direction of the concave portion Wa, and the selective coating liquid is dropped (supplied) from the nozzle 10A in the same manner to flatten the coating film T.

  After flattening the coating film on the surface of the wafer W by the selective coating process, the on-off valves V1 and V3 are closed, the opening of the on-off valve V2 of the pressure adjusting means 9 is adjusted, and the inside of the processing chamber 6 is decompressed to, for example, 50 Pa. Then, it opens to the atmosphere (depressurization / atmospheric release step: step 5-6). Then, after the shutter 6h is opened or with the shutter 6h being opened, the support pins are raised and the wafer W is pushed up above the surface of the mounting plate 7A, so that the transfer arm (not shown) receives the wafer W. Then, it is unloaded from the unloading port 6f (wafer unloading step: step 5-7).

  In the above-described embodiment, the case where the coating liquid is the SOG liquid has been described. However, the film forming technique according to the present invention can be applied to a coating liquid other than the SOG liquid, for example, a resist. Of course, the present invention can also be applied to a substrate such as an LCD substrate.

It is a schematic sectional drawing which shows 1st Embodiment of the film-forming apparatus which concerns on this invention. It is a principal part schematic sectional drawing which shows the state which planarizes the coating film of the uneven | corrugated | grooved part of the wafer in this invention. It is a flowchart which shows the operation | movement aspect of 1st Embodiment of the film-forming apparatus which concerns on this invention. It is a schematic sectional drawing which shows 2nd Embodiment of the film-forming apparatus based on this invention. It is a flowchart which shows the operation | movement aspect of 2nd Embodiment of the film-forming apparatus which concerns on this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Application | coating unit 2 Film-forming unit 3 Application | coating process chamber 4 Spin chuck 5 Coating liquid supply nozzle 6, 6A Processing chamber 7, 7A Mounting plate (holding means)
8 Solvent gas supply means 9 Pressure adjusting means 10, 10A Selective coating liquid supply nozzle 12 Selective coating liquid storage tank 20 Moving means 20X X-direction moving mechanism 20Y Y-direction moving mechanism 30 Pressure sensor 40 Controller (control means)
50 Refractive index measuring device (concentration detection means)
80 Vaporizer 90 Pressure reduction pump W Semiconductor wafer (substrate to be processed)
Wa Recessed V1, V2, V3 On-off valve T Coating film L Selective coating liquid

Claims (7)

A film forming method for supplying a coating liquid to a substrate to be processed having irregularities on the surface and forming a coating film on the surface of the substrate to be processed,
The substrate to be processed on which the coating film of the coating solution is formed is placed in a solvent gas atmosphere, and the solvent gas atmosphere is sucked, and after the solvent concentration of the coating film matches the concentration of the selective coating solution for replenishment, The substrate to be processed and the nozzle for supplying a selective coating liquid are relatively moved in parallel, and the selective coating liquid is supplied from the nozzle to a recess that needs to be replenished with the coating liquid in the substrate to be processed that has been stored in advance. A method for forming a coating film. In the film-forming method of the coating film of Claim 1,
A method for forming a coating film, comprising maintaining a state in which the solvent concentration of the coating film and the concentration of the selective coating liquid coincide with each other, and supplying the selective coating liquid from the nozzle in this state. A coating step of supplying a coating liquid to the substrate to be processed in which the surface unevenness state is stored in advance, and forming a coating film on the surface of the substrate to be processed;
Carrying the substrate to be processed on which the coating film is formed into a processing chamber cut off from outside air;
Supplying a solvent gas into the processing chamber to make the processing chamber a solvent gas atmosphere;
A step of sucking the solvent gas atmosphere and maintaining a state in which the solvent concentration of the coating film and the concentration of the selective coating liquid for replenishment match;
A step of relatively translating the substrate to be processed and a nozzle for supplying a selective coating liquid, and supplying the selective coating liquid from the nozzle to a recess that needs to be replenished with the coating liquid in the substrate to be processed that has been stored in advance;
A method for forming a coating film, comprising: A coating step of supplying a coating liquid to the substrate to be processed in which the surface unevenness state is stored in advance, and forming a coating film on the surface of the substrate to be processed;
Carrying the substrate to be processed on which the coating film is formed into a processing chamber cut off from outside air;
Supplying a solvent gas into the processing chamber to make the processing chamber a solvent gas atmosphere;
Sucking the solvent gas atmosphere, detecting the solvent concentration of the coating film by a solvent concentration detecting means, and maintaining a state in which the detected solvent concentration and the concentration of the selective coating liquid for replenishment match;
A step of relatively translating the substrate to be processed and a nozzle for supplying a selective coating liquid, and supplying the selective coating liquid from the nozzle to a recess that needs to be replenished with the coating liquid in the substrate to be processed that has been stored in advance;
A method for forming a coating film, comprising: In the film-forming method of the coating film in any one of Claim 1 thru | or 4,
The method for forming a coating film, wherein the selective coating solution contains a solvent having a concentration lower than that of the coating solution. A film forming apparatus for supplying a coating liquid to a substrate to be processed having irregularities on the surface and forming a coating film on the surface of the substrate to be processed,
A processing chamber for storing a substrate to be processed on which a coating film of the coating solution is formed from outside air;
Holding means disposed in the processing chamber for holding the substrate to be processed;
Solvent gas supply means for supplying solvent gas into the processing chamber;
Pressure detecting means for detecting the pressure in the processing chamber;
Pressure adjusting means for adjusting the pressure in the processing chamber;
A selective coating liquid supply nozzle for supplying a replenishment selective coating liquid set to a predetermined concentration on the surface of the substrate to be processed;
Moving means for relatively translating the holding means and the nozzle;
The unevenness state of the substrate to be processed and the solvent concentration of the coating film are stored, and based on the stored information and the information from the pressure detection means, after the solvent concentration and the concentration of the selective coating liquid match, Control means for controlling the position of the nozzle;
An apparatus for forming a coating film, comprising: A film forming apparatus for supplying a coating liquid to a substrate to be processed having irregularities on the surface and forming a coating film on the surface of the substrate to be processed,
A processing chamber for storing a substrate to be processed on which a coating film of the coating solution is formed from outside air;
A solvent concentration detection means for detecting a solvent concentration of a coating film disposed in the processing chamber and formed on the substrate to be processed;
Holding means disposed in the processing chamber for holding the substrate to be processed;
Solvent gas supply means for supplying solvent gas into the processing chamber;
Pressure adjusting means for adjusting the pressure in the processing chamber;
A selective coating liquid supply nozzle for supplying a replenishment selective coating liquid set to a predetermined concentration on the surface of the substrate to be processed;
Moving means for relatively translating the holding means and the nozzle;
The state of the unevenness of the substrate to be processed is stored, and the position of the nozzle is controlled after the concentration of the solvent and the concentration of the selective coating liquid match based on the stored information and the information from the solvent concentration detecting means. Control means to
An apparatus for forming a coating film, comprising:

Images