JP6468147B2 - Polishing apparatus, coating film forming apparatus, coating film forming method, and storage medium - Google Patents

Description

  The present invention relates to a technique for polishing and flattening a coating film, which is formed on a substrate having a step on its surface, mainly composed of carbon and cured by a crosslinking reaction, before curing. . Furthermore, the present invention relates to a technique for forming a pattern using a block copolymer containing at least two kinds of polymers and for phase separation.

  In a semiconductor device manufacturing process, there is a case where a thin film is stacked on a semiconductor wafer (hereinafter referred to as “wafer”), which is a substrate having a step, and planarized. For example, an etching mask for etching a predetermined portion of a pattern formed on a substrate is created by forming a thin film on the substrate and then etching using a resist pattern formed on the thin film. The

  As a thin film serving as an etching mask, a coating film called an SOC (Spin On Cap) film made of an organic film containing carbon as a main component, for example, having a carbon content of 80 to 90% is known. The coating film can be obtained by spin-coating a chemical solution containing a coating film precursor on, for example, a substrate and then curing it by a crosslinking reaction. On the other hand, the resist pattern is formed by applying a resist solution on a substrate, then exposing using a pattern mask, and then performing a development process, but in order not to cause a focus error during exposure, It is necessary to planarize the surface of the SOC film. Since a step is formed on the lower layer side of the SOC film, a gentle step is generated on the surface of the coating film cured by the heat treatment.

  Therefore, as a method for flattening the surface of the coating film, CMP (Chemical Mechanical Polishing) is known in which the surface of the coating film is polished while supplying a slurry containing an abrasive. However, since the SOC film has a very high hardness, when it is polished by CMP, a large load is required, the pattern is damaged or the pattern is scraped to become a state called erosion, and it is difficult to planarize. With the recent miniaturization of patterns, there has been a problem because the demand for flattening accuracy has increased.

  Patent Document 1 describes a technique of polishing and flattening a SOG (Spin On Glass) film used as an insulating film with a urethane brush before curing. Even if this technique is applied to the SOC film, the SOC film has a high hardness and may not be sufficiently polished.

  Patent Document 2 describes a technique of forming a film so that the lowest elevation of the flattening film is higher than the highest elevation of the lower film of the flattening film, and flattening by cutting or wiping. ing. However, this is a method of flattening the SOG film, and there is a possibility that the SOC film cannot be polished sufficiently.

  Furthermore, recently, in order to further miniaturize the mask pattern, practical application of a self-organized lithography technique using the property that the block copolymer is self-organized is being studied (Patent Document 3). ). As block copolymers, for example, those containing polystyrene (PS) and polymethyl methacrylate (PMMA) are known. In this technique, for example, a resist pattern formed on a substrate is coated with a chemical solution obtained by dissolving a block copolymer in a solvent to form a coating film, and then when the substrate is heated, PS and PMMA are phase-separated, A pattern in which PMMA is removed is formed by regularly arranging and dissolving PMMA with a solvent. For example, when a mask including holes is formed, the block copolymer filled in the holes formed in the resist is separated into cylindrical PMMA located in the center when viewed from the top and PS surrounding the periphery of PMMA. By removing PMMA, the hole diameter is reduced by the residual amount of PSS.

  When forming a coating film, if a region where the hole group arrangement density is large (region where the pattern is dense) and a region where the hole group is small (region where the pattern is sparse) coexist, the region where the pattern is sparse is better Since the amount of the coating liquid entering the pattern is reduced, the thickness of the coating film on the substrate is larger than that in the dense pattern area. However, there is a problem that the phase separation of the block copolymer is not properly performed in a region where the coating film made of the block copolymer is large.

Japanese Patent No. 4675803 Japanese Patent Laid-Open No. 9-82616 JP2013-232621A

  The present invention has been made under such circumstances, and an object thereof is an organic film formed on a substrate having a step on the surface and mainly composed of carbon, and is cured by a crosslinking reaction. The object is to provide a technique for flattening the surface of a coating film. Another object of the present invention is that the coating film of the block copolymer can be satisfactorily phase-separated even if there is a difference in the thickness of the coating film due to the guide pattern. It is to provide a technique that can be formed.

The polishing apparatus of the present invention is formed on a substrate having a step on the surface, and is an organic film mainly composed of carbon, and is flattened by polishing before curing a coating film cured by a crosslinking reaction. A polishing apparatus that performs
A substrate holder for holding the substrate;
A polyvinyl alcohol or Ranaru polishing member for polishing the coating film on the surface of the substrate,
A drive unit that relatively moves the polishing member along the surface of the substrate held by the substrate holding unit;
An additive liquid supply unit for supplying an additive liquid to wet the polishing member and the surface of the substrate ;
The drive unit includes a rotation mechanism that rotates the substrate holding unit,
The additive solution supply unit is provided so as to supply the additive solution to a position away from the contact portion between the substrate and the polishing member in the rotation direction of the substrate,
In the rotation direction of the substrate, a regulating part for regulating the amount of the additive liquid flowing toward the polishing member is provided between the supply position of the additive liquid supplied by the additive liquid supply part and the contact portion. .

The coating film forming apparatus of the present invention is an apparatus for forming a coating film that is formed on a substrate having a step on the surface and is an organic film mainly composed of carbon and cured by a crosslinking reaction.
An application part for applying a chemical solution containing a precursor of the coating film to the surface of the substrate;
The above polishing apparatus;
And a heat treatment unit that heat-treats the coating film on the substrate polished by the polishing apparatus and cures it by a crosslinking reaction.

The coating film forming method of the present invention is an organic film mainly composed of carbon on a substrate having a step on the surface, wherein the coating film is cured by a crosslinking reaction.
Applying a chemical solution containing a precursor of the coating film to the surface of the substrate;
Before curing respect coating film formed on the surface of the substrate by this process, the polyvinyl alcohol or Ranaru polishing member, the additive solution to the wetted and the polishing member and the surface of the substrate Polishing and flattening the coating film while supplying,
Then, the step of curing the coating film by a crosslinking reaction ,
The step of polishing and flattening the coating film includes a step of supplying an additive liquid from an additive liquid supply unit to the surface of the substrate while rotating the substrate, and a step of bringing a polishing member into contact with a portion through which the additive liquid flows And including
The method further includes a step of regulating the amount of the additive liquid flowing toward the polishing member between the supply position of the additive liquid by the additive liquid supply unit and the polishing member in the circumferential direction of the substrate .

The storage medium of the present invention is a storage medium for storing a computer program used in an apparatus for forming a coating film which is a carbon-based organic film on a substrate having a step on the surface and is cured by a crosslinking reaction. Because
The computer program has a set of steps so as to execute the above-described coating film forming method.

A coating film forming method according to another invention includes a step of forming a guide pattern including regions having different pattern densities on a substrate,
Next, a step of forming a coating film of the block copolymer by applying a coating solution obtained by dissolving a block copolymer containing a first polymer and a second polymer, which are different from each other, in a solvent, on the substrate;
Then, a polishing step of polishing the coating film with a polishing member and flattening,
Next, heating the coating film to separate the first polymer and the second polymer from each other;
Thereafter, a step of supplying a solvent to the coating film and dissolving and removing one of the first polymer and the second polymer is included.

In another embodiment of the present invention, a guide pattern is formed on a substrate, and one of the separated polymers is removed from the guide pattern using phase separation of the polymer and is covered with the polymer. A storage medium for storing a computer program used in an apparatus for forming a pattern,
The computer program includes a group of steps so as to execute the pattern forming method according to any one of the present inventions.

Furthermore, a coating film forming apparatus according to another invention is a module group for forming a resist film on a substrate, developing the exposed resist film to form a guide pattern,
On the substrate on which the guide pattern is formed, a coating solution obtained by dissolving a block copolymer containing a first polymer and a second polymer, which are different from each other, in a solvent is applied to the block copolymer. A module for forming a coating film;
A module for heating the substrate at a first temperature to volatilize the solvent in the coating film;
A module for polishing and planarizing the coating film heated at the first temperature by a polishing member;
A module for heating the substrate at a second temperature higher than the first temperature to separate the first polymer and the second polymer from each other;
A module for supplying a solvent for dissolving and removing one of the first polymer and the second polymer to the coating film;
And a substrate transfer mechanism for transferring the substrate between the modules.

The present invention is an organic film composed mainly of carbon and formed on a substrate having a step on the surface, and before flattening a coating film cured by a crosslinking reaction, before curing the coating film The surface of the coating film and the polishing member are polished with a polishing member made of polyvinyl alcohol or polyethylene while being wetted by the additive solution. Therefore, the coating film can be flattened while suppressing damage to the substrate pattern.
Another invention is that the block copolymer coating film used in the self-organized lithography technology is polished by the polishing member even if a difference in coating film thickness occurs due to the guide pattern. Since the combined film (coating film) is flattened, the subsequent phase separation can be performed well, and as a result, a good pattern can be formed. From another point of view, the thickness of the block copolymer film can be compared with the case where the block copolymer film is formed by flattening the block copolymer film. Process margins such as setting are increased.

1 is a plan view of an SOC film forming apparatus according to a first embodiment of the present invention. 1 is a longitudinal view of an SOC film forming apparatus according to a first embodiment of the present invention. It is a longitudinal stage view of the grinding | polishing unit which concerns on the 1st Embodiment of this invention. It is a top view of the polish unit concerning a 1st embodiment of the present invention. It is sectional drawing which shows the surface structure of the wafer used for the 1st Embodiment of this invention. It is explanatory drawing explaining grinding | polishing by the grinding | polishing unit of this invention. It is explanatory drawing explaining grinding | polishing by the grinding | polishing unit of this invention. It is explanatory drawing explaining the planarization process of a wafer. It is sectional drawing which shows the surface structure of the wafer in a planarization process. It is sectional drawing which shows the surface structure of the wafer in a planarization process. It is sectional drawing which shows the surface structure of the wafer in a planarization process. It is a top view which shows the grinding | polishing unit which concerns on the other example of the 1st Embodiment of this invention. It is a top view which shows the grinding | polishing unit which concerns on the other example of the 1st Embodiment of this invention. It is sectional drawing which shows the grinding | polishing unit which concerns on the other example of the 1st Embodiment of this invention. It is a top view which shows the grinding | polishing unit which concerns on the other example of the 1st Embodiment of this invention. It is a longitudinal view of the SOC film coating apparatus which concerns on the other example of the 1st Embodiment of this invention. It is a longitudinal view of the SOC film coating apparatus which concerns on the other example of the 1st Embodiment of this invention. It is explanatory drawing which shows transition of the surface state of a wafer about the reference example in the 2nd Embodiment of this invention. It is explanatory drawing which shows transition of the surface state of a wafer in the 2nd Embodiment of this invention. It is explanatory drawing which shows transition of the surface state of a wafer in the 2nd Embodiment of this invention. It is explanatory drawing which shows transition of the surface state of a wafer in the 2nd Embodiment of this invention. It is a longitudinal cross-sectional view which shows an example of the ultraviolet irradiation module used for the 2nd Embodiment of this invention. It is a cross-sectional view which shows the pattern formation apparatus for enforcing the pattern formation method which concerns on the 2nd Embodiment of this invention. It is the right view which looked at said pattern formation apparatus from the inside. It is the left view which looked at said pattern formation apparatus from the inside. It is a photograph which shows the surface of the wafer which concerns on an Example. It is a photograph which shows the surface of the wafer which concerns on an Example. It is a photograph which shows the surface of the wafer which concerns on an Example. It is a photograph which shows the surface of the wafer which concerns on a comparative example. It is explanatory drawing explaining the imaging | photography site | part on the surface of a wafer. It is a photograph which shows the cross section of the wafer before grinding | polishing before grinding | polishing and the coating film of 2nd time.

[First embodiment]
A first embodiment of the present invention will be described. 1 and 2 show an SOC film forming apparatus for applying a raw material of an SOC film, which is a coating film, to a wafer W to flatten the surface. The SOC film forming apparatus includes a carrier station 110 for carrying in and out of the apparatus from a carrier C, which is a transfer container including a plurality of wafers W, and a processing station 120 for forming an SOC film as a coating film on the surface of the wafer W. , Are connected. The carrier station 110 has a role of carrying in and out of the apparatus from the carrier C, which is a transfer container including a plurality of wafers W, and a mounting rail 111 of the carrier C and a guide rail for transferring the wafer W from the carrier C. 112, and a first transfer arm 113 that moves along the line 112.

  The processing station 120 is provided with a second transfer arm 122, and processing blocks G1 and G2 are disposed on the right side and the back side of the second transfer arm 122 as viewed from the carrier station 110 side, respectively. As viewed from the carrier station 110 side, processing blocks G3 and G4 are arranged on the front side and the back side on the left side of the second transfer arm 122, respectively. As shown in FIG. 2, the processing block G <b> 1 includes two layers of coating units 2 that apply a raw material for forming an SOC film on the wafer W. In the processing block G2, a polishing unit 3 which is a polishing apparatus for flattening the surface after the SOC film material is applied to the wafer is laminated in two stages. In the processing block G3, similarly to the processing block G1, the coating units 2 are stacked in two stages, and in the processing block G4, the heating units 5 are stacked in two stages.

  A transfer shelf 121 for transferring the wafer W is provided at a position near the carrier station 110 in the processing station 120, and the wafer W is transferred between the carrier C and the transfer shelf 121 by the first transfer arm 113. The second transfer arm 122 transfers the wafer W between the transfer shelf 121 and the coating unit 2, the polishing unit 3 and the heating unit 5 provided in each of the processing blocks G1 to G4.

Subsequently, the coating unit 2 will be described. The coating unit 2 applies, for example, a coating solution in which an organic material that is a precursor of the SOC film is dissolved in a solvent to the wafer W on which a pattern is formed by a known spin coating method. As the organic material, a liquid obtained by dissolving an organic film raw material containing a carbon compound, for example, a polymer raw material having a skeleton of a polyethylene structure ((—CH ₂ —) _n ) is used. The organic material contains a cross-linking agent that undergoes cross-linking by heating to 300 ° C., for example. The coating film formed by applying an organic material to the wafer W has a lower hardness than a film such as SiO ₂ that forms a pattern before heating, but by heating to 300 ° C., crosslinking proceeds and the SOC is increased. The film hardness increases. The application unit 2 includes, for example, a spin chuck and a cup body configured in the same manner as a polishing unit 3 described later, but the description thereof is omitted here. The coating unit 2 includes a coating solution nozzle that discharges and coats an organic material toward the wafer W held by the spin chuck.

  Next, the polishing unit 3 that is a flattening unit for flattening the SOC film will be described. As shown in FIGS. 3 and 4, the polishing unit 3 includes the inside of the housing 10, and a loading / unloading port 14 for the wafer W that is opened and closed by a shutter 15 is provided on the side wall of the housing 10. A spin chuck 11 that is a substrate holding unit that sucks and horizontally holds the central part of the back surface of the wafer W is provided at the central part of the housing 10, and the spin chuck 11 is connected via a rotating shaft 12 that extends vertically. The drive mechanism 13 is connected. The drive mechanism 13 includes a rotation drive source such as a rotation motor (not shown) and is configured to rotate at a predetermined speed. In this example, the wafer W is configured to rotate clockwise as viewed from above. ing. The drive mechanism 13 includes an elevating drive source, and the spin chuck 11 is configured to be movable up and down.

  Around the spin chuck 11, a cup body 30 whose upper side is opened so as to surround the wafer W held by the spin chuck 11 is provided. An inclined portion 31 that is inclined inward is formed on the upper side of the side peripheral surface of the cup body 30, and a liquid receiving portion 32 that forms, for example, a recess is provided on the bottom side of the cup body 30. The liquid receiving part 32 is divided into an outer region and an inner region over the entire circumference on the lower side of the periphery of the wafer W by a partition wall 33. A drain port 34 for discharging the drain is provided at the bottom of the outer region, and an exhaust port 35 for exhausting the processing atmosphere is provided at the bottom of the inner region.

  In the housing 10, first, second, and third arms 21 to 23 that extend in the front-rear direction are provided. The first arm 21 is configured to be movable by a driving body 27 along a guide rail 24 extending in the left-right direction on the front side of the cup body 30 when viewed from the inside of the polishing unit 3 toward the loading / unloading port 14 side. ing. The driving body 27 includes an elevating mechanism (not shown), and the first arm 21 is configured to be movable up and down. At the tip of the first arm 21, for example, an additive liquid nozzle 51 that is an additive liquid supply section that supplies an additive liquid such as pure water, a nitrogen gas nozzle 52 that discharges, for example, nitrogen gas that is a drying gas, Is provided. The nozzles 51 and 52 move between an upper region of the cup body 30 and a standby region located on the left side of the cup body 30 when viewed from the inside of the polishing unit 3 toward the loading / unloading port 14 side. A nozzle bath 53 that is a liquid receiving portion of the additive liquid nozzle 51 is provided in the standby area.

  The additive liquid nozzle 51 is connected to an additive liquid supply unit 55 via a pipe 54, for example. The additive liquid supply unit 55 includes an additive liquid supply source, a pump, a valve, and the like, and is configured so that the additive liquid can be discharged from the tip of the additive liquid nozzle 51. The nitrogen gas nozzle 52 is connected to a gas supply unit 57 including a nitrogen gas supply source, a pump, a valve, and the like via a pipe 56, and the nitrogen gas nozzle 52 is configured to discharge nitrogen gas. The additive liquid nozzle 51 is provided on the left side of the nitrogen gas nozzle 52 when viewed from the inside of the polishing unit 3 toward the loading / unloading port 14 side. The nitrogen gas nozzle 52 is provided with a tip inclined toward the additive liquid nozzle 51, so that the nitrogen gas blown from the nitrogen gas nozzle 52 pushes the additive liquid discharged onto the surface of the wafer W in the peripheral direction of the wafer W. Is provided.

  Further, the second arm 22 is viewed by the driving body 28 along the guide rail 25 provided in parallel with the guide rail 24 on the front side of the cup body 30 when viewed from the inside of the polishing unit 3 toward the loading / unloading port 14 side. It is configured to be movable. Further, the driving body 28 is provided with an elevating mechanism, and the second arm 22 is configured to be movable up and down. A polishing portion 4 that is a polishing body is provided on the lower surface of the tip portion of the second arm 22. The polishing unit 4 includes a polishing member 40 and a rotating shaft 42 connected to the upper portion of the polishing member 40 via a plate-like member 41. The polishing member 40 is formed of, for example, PVA (polyvinyl alcohol) in a substantially cylindrical porous shape with a lower surface diameter of 65 mm, and the lower surface is formed flat. The rotary shaft 42 is inserted into the second arm 22 and is configured to be rotatable around the vertical axis by a drive mechanism provided in the second arm 22, for example, a belt or a rotary shaft. Has been. In this example, the rotating shaft 42 is configured to rotate counterclockwise as viewed from above.

  Further, when the loading / unloading port 14 side is seen from the inside of the polishing unit 3, the surface of the wafer W is photographed on the left side of the polishing unit 4, the color of the surface of the wafer W is detected, and the film thickness of the coating film 9 described later is set. A CCD camera 43 serving as a measurement unit for measurement is connected. The polishing unit 4 and the CCD camera 43 have a standby unit 44 on which the polishing unit 4 provided on the right side of the cup body 30 waits when viewed from the inside of the polishing unit 3 toward the loading / unloading port 14 side, Move between. In this example, the driving body 27 that moves the polishing unit 4 and the driving mechanism 13 that rotates the spin chuck 11 correspond to the driving unit.

  Similarly, the third arm 23 also sees the loading / unloading port 14 side from the inside of the polishing unit 3, and along the guide rail 26 provided in parallel with the guide rails 24, 25 on the front side of the cup body 30, the driving body 29 is configured to be movable. The drive body 29 includes an elevating mechanism, and the third arm 23 is configured to be movable up and down. A cleaning brush 6 is provided on the lower surface of the distal end portion of the third arm 23. The cleaning brush 6 includes a cleaning member 60 made of polyurethane, for example, and a rotating shaft 62 connected to the upper portion of the cleaning member 60 via a plate-like member 61. The rotating shaft 62 is inserted into the third arm 23, and is configured to be rotatable around the vertical axis by a drive mechanism provided in the third arm 23, for example, configured by a belt, a rotating shaft, or the like. Has been. Further, when viewed from the inside of the polishing unit 3 toward the loading / unloading port 14, a cleaning brush standby unit 64 is provided on the right side of the standby unit 44 on which the polishing unit 4 stands by.

  Next, the heating unit 5 will be described. The heating unit 5 includes a mounting table for mounting the wafer W in the housing and a heating unit for heating the wafer W mounted on the mounting table. For example, the heating unit 5 is configured to heat the wafer W to 300 ° C. Yes.

  The SOC film forming apparatus is provided with a control unit 8 composed of, for example, a computer. The control unit 8 includes a program storage unit. The program storage unit includes a first transfer arm 111 and a spin chuck 11 in the transfer of the wafer W in the SOC film forming apparatus or the polishing unit. A program is stored in which instructions are set so that the wafer W is transferred, the spin chuck 11 is rotated, nitrogen gas and pure water are supplied, or the polishing sequence by the polishing unit 4 is executed. This program is stored in a storage medium such as a flexible disk, a compact disk, a hard disk, an MO (magneto-optical disk), or a memory card and installed in the control unit 8.

Next, the operation of the SOC film forming apparatus will be described. For example, as shown in FIG. 5, a pattern 92 of a SiO ₂ film 91 is formed on a wafer W having a diameter of 300 mm serving as a substrate. The pattern 92 is formed densely and a blanket in which only the pattern 92 is arranged. A region A, a line-and-space region B in which patterns 92 and depressions 93 are alternately formed, and a recess region C in which the pattern 92 is not formed and a wide depression 93 is formed are provided.

  For example, when the carrier C storing 25 wafers W is placed on the placement stage 111, one wafer W is taken out by the first transfer arm 113 and placed on the delivery shelf 121. Thereafter, the wafer W is transferred by the second transfer arm 122 to, for example, the lower coating unit 2 in the first processing block G1, and is subjected to spin coating to an organic material that is a raw material of the SOC film, that is, a precursor of the SOC film. A coating solution containing the substance is applied.

  At this time, the coating solution is uniformly supplied to the surface of the wafer W. However, since the coating solution has a large viscosity, the opening ratio of the surface of the wafer W (in the convex portion per unit area) as shown in FIG. The coating film 9 having different surface heights is formed depending on the ratio of the area of the pattern 92. For example, in the blanket region A where the aperture ratio is 0, the coating film 9 is formed from the height of the upper surface of the pattern 92. On the other hand, since the pattern 92 is not formed in the recessed region C having a large aperture ratio, the coating film 9 is formed from the height of the bottom surface of the recessed portion 93. For this reason, when an equal amount of coating liquid per unit area is placed in the recessed area C and the blanket area A, the surface height of the coating film 9 formed in the recessed area C is equal to the coating film 9 formed in the blanket area A. It becomes lower than the surface height. In addition, when the aperture ratio of the line and space region B is 0.5, in the line and space region B, a coating liquid that is half the amount of the coating solution that enters the recess portion 93 in the recess region C enters the recess portion 93. . Therefore, the surface height of the coating film 9 formed in the line and space region B is the surface height of the coating film 9 formed in the blanket region A and the surface height of the coating film 9 formed in the recessed region C. The middle height.

  In the polishing unit 3, the wafer W is transferred from the second transfer arm 122 to the spin chuck 11 so that the center of the wafer W coincides with the center of rotation, and is held by suction. At the time of transferring the wafer W, the spin chuck 11 may be lifted, but for example, three pins (not shown) are lifted through the thickness direction of the spin chuck 11 and the pins to which the wafer W has been transferred are lowered. You may do it. Next, the first arm 21 moves, and the discharge position of the additive liquid nozzle 51 is located above the center of the wafer W. Thereafter, an additive liquid, for example, pure water is supplied from the additive liquid nozzle 51 at a flow rate of, for example, 100 mL / min while rotating the wafer W at a rotational speed of, for example, 500 rpm. This additive liquid has a role of wetting the surface of the wafer W and the polishing member 40 to reduce friction between them. The pure water supplied to the central portion of the wafer W spreads toward the peripheral edge due to the centrifugal force generated by the rotation of the wafer W. Hereinafter, the left and right directions will be described as the left side and the right side, respectively, when the loading / unloading port 14 side is viewed from the inside of the polishing unit 3.

  Next, with the rotation of the wafer W maintained, with the pure water discharged from the additive solution nozzle 51, the first arm 21 is moved to the left, and the discharge position of the nitrogen gas nozzle 52 is positioned at the center of the wafer W. Then, nitrogen gas is blown from the nitrogen gas nozzle 52 toward the center of the wafer W. Since the nitrogen gas nozzle 52 blows nitrogen gas toward the periphery of the wafer W, the liquid film at the center of the wafer W is broken, and further pure water is pushed toward the periphery of the wafer W by the nitrogen gas.

  Subsequently, the rotation of the wafer W is maintained, and the first arm 21 is moved to the left side of the wafer W while discharging pure water and nitrogen gas from the additive liquid nozzle 51 and the nitrogen gas nozzle 52, respectively. The position is positioned at a position slightly displaced from the center of the wafer W. Further, the second arm 22 is moved so that the center of the polishing member 40 is positioned slightly to the right of the center of the wafer W. Thereby, the central portion of the wafer W is positioned below the polishing member 40. The diameter of the polishing member 40 is 65 mm, for example. Thereafter, the polishing member 40 is rotated around the vertical axis, and the polishing member 40 is lowered to bring the lower surface of the polishing member 40 into contact with the surface of the wafer W.

  At this time, pure water is supplied to a position slightly to the left of the central portion of the wafer W with the wafer W rotated clockwise. Therefore, as shown in FIG. 6, the hatched region in the drawing far from the position where pure water is supplied from the center of the wafer W on the surface of the wafer W is in a state wetted with pure water. At this time, since nitrogen gas is blown from the nitrogen gas nozzle 52 toward the peripheral edge of the wafer W, the hatching on the side of the additive liquid nozzle 51 when viewed from the center of the wafer W in the hatched region in FIG. As shown by the horizontally reversed region, on the surface of the wafer W, outside the pure water supply position, the rotational direction side of the wafer W at the pure water supply position. The amount of pure water increases due to the water spray.

  As a result, of the area wetted with pure water on the surface of the wafer W, the area excluding the area where the hatching is reversed horizontally is an area where pure water flows thinly. Further, the polishing unit 4 is located at a position where the wafer W is rotated clockwise with respect to the pure water supply position on the surface of the wafer W. Therefore, the polishing member 40 is wetted by supplying pure water from the counterclockwise direction with respect to the center of the wafer W. Then, the surface of the wafer W is polished by pressing the polishing unit 4 wet with pure water against the wafer W while rotating around the vertical axis.

  The polishing member 40 is first disposed above the central portion of the wafer W, and the central portion of the polishing member 40 is disposed at a position slightly displaced to the right of the central portion of the wafer W. In order to rotate the wafer W in this state, the polishing member 40 moves on the circumference indicated by the broken line on the surface of the wafer W, and the region indicated by the chain line is polished.

  Thereafter, the second arm 22 is moved rightward to the periphery of the wafer W while the wafer W is rotated and the polishing unit 4 is rotated while being in contact with the surface of the wafer W. Further, the first arm 21 is moved to the periphery of the wafer W toward the left side at a speed equal to or lower than the moving speed of the second arm 22, for example, the same speed as the moving speed of the second arm 22. As a result, pure water flows on the surface of the wafer W, and further, the amount of pure water supplied to the polishing member 40 is regulated to be small by blowing nitrogen gas onto the surface of the wafer W. As shown in FIG. 2, the polished region on the surface of the wafer W spreads from the center side to the peripheral edge of the wafer W, and the entire surface of the wafer W is polished.

  In this example, the polishing unit 4 is moved from the center to the periphery of the wafer W to polish (scan) the entire surface of the wafer W, and the above-described polishing process is repeated three times, for example. In the process, the wafer W is polished by adjusting the shaving amount. The amount of wafer W to be shaved is, for example, increasing the rotational speed of the polishing unit 4, increasing the force for pressing the polishing member 40 against the wafer W by lowering the height position of the polishing unit 4, and increasing the rotational speed of the wafer W. However, although it increases by slowing down the moving speed of the 2nd arm 22, adjustment of the shaving amount by adjustment of the rotational speed of the grinding | polishing part 4 is demonstrated to an example here. The rotational speed of the polishing unit 4, the height position of the polishing unit 4, the rotational speed of the wafer W, and the moving speed of the second arm 22 correspond to adjustment factors.

  In FIG. 8, the upper diagram shows the change with time of the distance from the center of the wafer W of the polishing unit 4 in the polishing process, and the lower diagram shows the change with time of the rotational speed of the polishing unit 4. Therefore, the horizontal axis of the lower diagram shows the position of the polishing member 40 in each process, the left end in each process is the center of the wafer, and the right end is the peripheral edge of the wafer W. It can be said that it is located in The distance of the polishing member 40 from the center of the wafer W is indicated by the position of the polishing member 40 closest to the center of the wafer W, and is 0 when the center of the wafer W is located on the lower surface of the polishing unit 4. It is said. In the first polishing process, when the polishing unit 4 is moved from the central part to the peripheral part of the wafer W, the number of rotations of the polishing unit 4 is kept constant. For example, the coating film in the blanket region A before the polishing is started Polishing is performed so that the thickness is reduced to about 20% of the thickness of the thickest portion 9. Regarding the amount of shaving, the relationship between the rotational speed of the polishing unit 4 and the amount of shaving is considered in advance in consideration of the rotational speed of the wafer W, the type of organic material to be applied, the supply amount of pure water, the moving speed of the polishing unit 4, and the like. An equation is obtained, and polishing is performed by setting the rotational speed of the polishing unit 4 to be a target cutting amount. Note that the thickness of the coating film 9 in the polishing step indicates the thickness of the coating film 9 stacked above the height position of the upper surface of the pattern 92, and the depression below the height position of the upper surface of the pattern 92. It is assumed that the coating film 9 embedded in the portion 93 is not included.

When performing the first polishing process, the surface of the wafer W after the first polishing is photographed by the CCD camera 43 while moving the polishing unit 4 from the center of the wafer W toward the peripheral edge. Then, the thickness of the coating film 9 is determined. Since the coating film 9 is a translucent layer, the thin portion of the remaining coating film 9 after polishing is close to the color of the underlying SiO ₂ film 91. Therefore, the color data of the surface color of the wafer W after the polishing process is acquired in advance, and the color data of the color of the surface of the wafer W is obtained from the color data of the color of the surface of the wafer W before the polishing process. The polishing amount is estimated based on how close the color data of the surface color of the wafer W is. The color data of the surface of the wafer W after the polishing process varies depending on the density of the pattern 92. Therefore, for example, in each of the blanket area A, the line and space area B, and the recessed area C, color data of the surface color of the wafer W after the polishing process is acquired, and the blanket area A, the line and space area B, and the recessed area C When each region is polished, the polishing amount is estimated based on the color data for each region.

  When the wafer W is polished in the polishing unit 3, the polishing amount varies depending on the state of wear of the polishing unit 4 and the degree of wetness of the wafer W. Therefore, in the first polishing process, the current polishing efficiency according to the current state of the polishing unit 4 and the degree of wetness of the wafer W, for example, the polishing amount when polishing is performed for a unit time at a predetermined rotation speed of the polishing unit 4 To figure out.

  In the subsequent second polishing step, when the polishing unit 4 is moved from the center of the wafer W toward the peripheral edge, the polishing unit 4 is based on the color data distribution of the surface color of the wafer W after the first polishing step. Adjust the rotation speed. For example, when polishing the surface of the wafer W having a height difference on the surface, the height difference of the surface is on the order of submicrons, so that the polishing member 40 contacts the polishing member 40 almost simultaneously regardless of the height difference of the wafer W surface. However, the portion where the surface of the wafer W is high is easily polished because the strength against which the polishing member 40 is pressed is slightly stronger than the portion where the surface of the wafer W is low. Therefore, a slight difference in height may remain after polishing.

  9 to 11, an example in which the blanket region A side is the peripheral side of the wafer W will be described. For example, in the first polishing step, the thickness of the remaining coating film 9 on the peripheral side is as shown in FIG. If it is thick (the surface of the coating film 9 is high), as shown in FIG. 8, in the second polishing step, when the polishing unit 4 moves to the peripheral side position, the rotational speed of the polishing unit 4 is set. Increase the polishing amount. Then, in the second polishing step, most of the coating film 9 is shaved as shown in FIG. 10, for example, with respect to the thickness of the thickest portion of the coating film 9 in the blanket region A before the polishing is started. Polishing is performed so that the coating film 9 with a thickness of about% remains. Accordingly, the difference between the distribution of the color data of the surface color of the wafer W after the first polishing process and the distribution of the color data of the color of the surface of the wafer W when the coating film 9 having a thickness of 10% remains. The rotational speed of the polishing unit 4 is adjusted so that the polishing amount is obtained. The rotational speed of the polishing unit 4 at this time is based on the current polishing efficiency relative to the rotational speed of the polishing unit 4 in the current state of the polishing unit 4 and the degree of wetness of the wafer W estimated in the first polishing process. Adjusted.

  Thus, the first polishing process is a confirmation of the current polishing efficiency of the polishing unit 4, and the thickness of the coating film remaining on the surface of the wafer W after the second polishing process is made uniform within the surface. This is done to a thickness of 10%.

Further, also during the second polishing process, the surface of the wafer W is photographed by the CCD camera 43 to obtain the height distribution of the coating film 9. In the third polishing step, adjustment is performed so that the remaining thickness of the coating film 9 becomes a target amount of cutting, that is, the surface of the coating film 9 becomes flat. Therefore, as shown in FIG. 8, for example, if the remaining thickness of the coating film 9 in the peripheral side region of the wafer W is thin after the second polishing step, the third polishing step as shown in FIG. As the position of the polishing unit 4 approaches the periphery, the number of rotations of the polishing unit 4 is decreased. The coating film 9 has a lower hardness than the SiO ₂ pattern 92 before heating. Therefore, when the coating film 9 is removed by polishing, the pattern 92 serves as a stopper and is polished to a height position on the upper surface of the pattern 92. As a result, as shown in FIG. 11, the wafer 92 after the third polishing step is exposed, and the pattern 92 of the SiO ₂ film 91 is exposed, the depression 93 is filled with the coating film 9, and the surface becomes flat. .

  After the third polishing process is completed, the polishing unit 4 is retracted out of the wafer W while maintaining the rotation of the wafer W. Next, the third arm 23 is moved, and the cleaning brush 6 is positioned above the wafer W. Further, the first arm 21 is moved so that the additive liquid nozzle 51 is positioned at the center of the wafer W. Thereafter, the same operation as that in the polishing step is performed except that the cleaning brush 6 is used in place of the polishing unit 4, and while supplying the additive liquid and nitrogen gas to the surface of the wafer W, the peripheral portion from the central portion of the wafer W is performed. The cleaning brush 6 is moved once toward the head. As a result, the polished material generated by polishing the coating film 9 is removed. Since the cleaning brush 6 is made of polyurethane, it does not have enough polishing power to polish the coating film 9, but pure water or the like can be obtained by rubbing the surface of the wafer W while supplying a rinsing liquid such as pure water. Compared with the case where the surface of the wafer W is washed away only by supplying the rinsing liquid, polishing residues and foreign matters adhering to the surface of the wafer W can be efficiently removed. Here, the pure water is supplied as the rinse liquid by the additive liquid nozzle 51 provided in the first arm 21, but a nozzle for supplying the rinse liquid may be provided.

In the above-described embodiment, after applying the organic material and before the heat treatment, the polishing unit 4 made of PVA is used to polish the polishing unit 4 and the wafer W while being wet with pure water. I am doing. The coating film 9 has a lower hardness than SiO ₂ before heating. Therefore, the coating film 9 having a low hardness is polished and polished up to the upper surface of the pattern 92. The polishing is performed while the wafer W and the polishing unit 4 are in a wet state using the polishing unit 4 having a low hardness such as PVA. By performing the above, the coating film 9 can be removed while suppressing damage to the pattern 92 as supported by the examples described later.

  Further, the polishing amount is adjusted based on the polishing efficiency measured in the first and second polishing steps, and the surface of the wafer W is flattened in the third polishing step. Therefore, there is little possibility that the load applied to the pattern 92 becomes too large, or the amount of polishing is small and the coating curtain remains.

  The wafer W that has been subjected to the polishing process is transferred to the transfer shelf 121 by the second transfer arm 122, for example, and then transferred to the upper coating unit 2 in the first processing block G1, for example, and polished. A second layer of organic raw material is further formed on the wafer W. Since the surface of the wafer W that has been subjected to the polishing process is small, the surface of the wafer W coated with the second organic material layer becomes flat. Then, for example, it is carried into the heating unit 5 in the second processing block G2, heated to 300 ° C., and the cross-linking of the two-layer coating film 9 proceeds to increase the hardness and become an SOC film.

  Thereafter, the wafer W is transferred to the transfer shelf 121 by the second transfer arm 122 and then returned to the carrier C by the first transfer arm 112. Thereafter, the carrier C is conveyed to a coating / developing apparatus, and in the coating / developing apparatus, for example, a Si-containing antireflection film and a resist film are formed in this order on the flattened wafer W and exposed by an exposure apparatus. After the processing is performed, a development process is performed to form a resist pattern.

  Further, for example, the SOC film forming apparatus applies the first coating film 9 and polishes it with the polishing unit 3, then transports it to the heating unit 5, performs heat treatment, and cures the coating film 9. The coating film 9 may be transported to the coating unit 2 and applied to the coating film 9 for the second time, and then transported to the heating unit 5 for heat treatment to cure the coating film 9.

  Furthermore, the coating film 9 may be applied once, and may be applied twice or more, for example, five times.

  The above-described embodiment has the following effects. First, PVA is used as the polishing member 40. By using the polishing portion 4 made of a material having water absorption properties such as PVA, when the wafer W is polished, the water soaked into the polishing portion 4 is polished while being exuded between the polishing portion 4 and the wafer W. Can do. Further, since it has higher frictional resistance and higher polishing ability than polyurethane and chamois, it is suitable for removing the excess coating film 9. Furthermore, PVA is composed of carbon, hydrogen, and oxygen, and has a composition close to that of an organic material supplied as a raw material for the SOC film. For example, if the SOC material contains a metal-based substance contained in the slurry, there is a risk of causing a problem during etching. However, in the case of a material composed of carbon, hydrogen, and oxygen, a problem occurs. There is no fear. For this reason, there is no possibility that a defect may occur during etching or the like even when the polishing part 4 adheres to the scraped wafer W due to wear and is included in the SOC film by the second application of the coating liquid.

  Further, nitrogen gas is blown onto the pure water supplied to the wafer W to regulate the amount of pure water supplied to the polishing member 40. If the amount of water in contact with the polishing unit 4 is too large, the water becomes a lubricant and the polishing force by the polishing unit 4 may be weakened. Therefore, the coating film 9 can be reliably polished.

  Furthermore, the coating unit 2, the polishing unit 3, and the heating unit 5 are provided in the SOC film coating apparatus. Therefore, after applying the SOC film, it is not necessary to transfer to a polishing apparatus or heating apparatus equipped with a polishing unit, reducing the time required for transfer between apparatuses and reducing the installation cost of the polishing apparatus or heating apparatus. can do.

  Next, another example of the polishing unit will be described. For example, you may comprise so that the grinding | polishing part 4 and the brush 6 for washing | cleaning may be changed with a common arm. For example, a mounting unit for mounting the polishing unit 4 and the cleaning brush 6 is provided in the housing 10 shown in FIG. 3, and the polishing unit 4 and the cleaning brush 6 are replaced with the tip of the second arm 22 for polishing and cleaning. Should be done. Furthermore, the polishing unit 4 and the cleaning brush 6 may be configured to be detachable. For example, an engagement structure may be employed between the rotating shaft 42 and the plate-like members 41 and 61.

  When the polishing unit 4 made of PVA is used, as shown in FIG. 12, the position of the polishing unit 4 is opposite to the polishing unit 4 in the rotation direction of the wafer W, in this example, on the surface of the wafer W. On the other hand, for example, a wiper brush 45 serving as an additive liquid regulating portion that adjusts the amount of water on the surface of the wafer W may be provided at a position shifted by 15 to 30 degrees in the central angle of the wafer W, for example. The wiper brush 45 may be provided so as to be fixed to the second arm 22, for example. For example, when only the nitrogen gas discharged from the nitrogen gas nozzle 52 cannot suppress the amount of water, the amount of pure water flowing through the surface of the wafer W and contacting the polishing unit 4 is regulated by the wiper brush 45. Can do. If the amount of water in contact with the polishing unit 4 is too large, the water becomes a lubricant and the polishing force by the polishing unit 4 may be weakened. Therefore, the coating film 9 can be reliably polished.

  Further, as the restricting portion, instead of the wiper brush 45, a wiper 46 configured to contact the side surface of the flat plate with the surface of the wafer W as shown in FIG. 13 may be used. For example, the side surface of the flat plate and the surface of the wafer The amount of liquid may be regulated by adjusting the height of the gap. Further, an air wiper that blows nitrogen gas linearly onto the surface of the wafer W may be used. For example, the amount of the additive liquid that flows toward the polishing member 40 may be adjusted by adjusting the discharge amount of the nitrogen gas. Further, for example, a suction hole may be provided on the lower surface of the wiper brush 45 shown in FIG. 12, and the liquid amount may be regulated by sucking moisture on the surface of the wafer W from the suction hole by a suction mechanism.

  Furthermore, the additive solution supply unit that supplies the additive solution that wets the polishing unit 4 and the surface of the wafer W penetrates the rotating shaft 42 and the plate-like member 41 and passes through the second arm 22, for example. The additive liquid is supplied from the upper side of the polishing unit 4, and the additive liquid that has permeated the polishing unit 4 made of a porous body is supplied to the surface of the wafer W.

  Furthermore, a back surface cleaning brush 47 for cleaning the back surface side of the wafer W may be provided in the polishing unit 3 as shown in FIG. When the surface of the wafer W is polished by the polishing unit 4, the center of the back surface of the wafer W is held by the spin chuck 11. For this reason, when the portion near the periphery of the wafer W is polished, the wafer W may be bent by the pressing of the polishing unit 4 and may not be uniformly polished. Therefore, when the polishing unit 4 polishes the region outside the region held by the spin chuck 11 of the wafer W, the portion pressed by the polishing unit 4 of the wafer W as shown in FIG. The back surface cleaning brush 47 may be pressed from the back surface side, and further, the back surface cleaning brush 47 is moved corresponding to the movement of the polishing unit 4, whereby the bending of the wafer W due to the pressing of the polishing unit 4 can be suppressed.

  Further, for example, polyethylene may be used as the material of the polishing member 40. Polyethylene. Although the water absorption is low, wetting with water improves the frictional resistance and the adhesion to the wafer W. Furthermore, since polyethylene is also composed of carbon, hydrogen, and oxygen, there is no risk of problems occurring in etching even when shavings are mixed into the coating film 9. Therefore, the same effect can be obtained by using the polyethylene polishing member 40. Moreover, when using polyethylene, it is preferable to use the high density polyethylene whose density is 0.942 or more, for example. High-density polyethylene has a high hardness, so a high polishing force can be obtained. Moreover, when using the grinding | polishing part 4 which uses polyethylene as a material, as shown in the below-mentioned Example, it can fully grind | polish also when there is much water quantity.

  Further, for example, a laser displacement meter for measuring the height position at each of a position near the periphery of the wafer W and a position near the center of the wafer W is provided, or a pressure sensor is provided above the rotation shaft 42 of the polishing unit 4 to provide a wafer. The pressure with which the polishing member 40 is pressed against W may be measured to measure the film thickness of the coating film 9, or the film thickness of the coating film may be measured before polishing. Further, for example, the warpage of the wafer W may be detected by measuring the distance from the wafer W by the phase shift of the frequency of the laser reflected on the surface of the wafer W using a laser displacement meter. Then, the polishing amount may be adjusted by adjusting the height position and rotation speed of the polishing unit 4 in accordance with the warpage of the wafer W.

  In measuring the distribution of color data of the color of the surface of the wafer W, the relative color difference on the outer peripheral side with respect to the central color may be determined by looking at the outer peripheral side from the center side of the wafer W. The polishing amount may be adjusted according to the difference in color.

  Further, the application of the organic material as the raw material of the SOC film and the polishing may be performed in a common unit. For example, as shown in FIG. 15, an example in which a coating liquid nozzle 7 for supplying an organic material as a raw material of the SOC film is provided in the polishing unit 3 shown in FIGS. For example, the polishing unit 103 may be provided with a coating liquid nozzle 7 supported by a nozzle arm 70 that moves along the guide rail 71 and configured to move between the upper portion of the wafer W and the standby region 72. . Furthermore, the nozzle arm 70 and the coating liquid nozzle 7 may be arranged so that their height positions are different, for example, so as not to interfere with the first to third arms 21 to 23. Then, an organic material is supplied to the wafer W from the coating solution nozzle 7 to apply the raw material of the SOC film, and then the coating solution nozzle 7 is retracted from above the wafer W. Thereafter, the polishing process may be performed on the wafer W by the polishing unit 4, the additive liquid nozzle 51, and the nitrogen gas nozzle 52 as shown in the above-described embodiment. Thus, by performing the coating process of the SOC film in the polishing unit 103, it is not necessary to provide a coating module separately from the polishing unit 103, so that the installation space can be reduced.

  Further, the polishing unit 4 and the cleaning brush 6 are rotated while being immersed in the cleaning liquid at the standby position, or dehydration is performed by pressing or swinging the standby units 44 and 64 against the bottom surface. You may make it move by including a certain amount of moisture. In the case of the dry polishing member 40, the amount of the additive liquid sucked is large, and there is a possibility that the amount of water immediately after the start of polishing of the wafer W is insufficient. By adding the additive liquid to the polishing member 40 in advance, it is possible to polish from a state of being moderately wet from the start of polishing. Further, when the lower surface of the polishing unit 4 is photographed with a camera and the degree of wear of the polishing member 40 is evaluated and the threshold is exceeded, an alarm is generated or the polishing unit 4 is cleaned with the above-mentioned one arm. Similarly to the example in which the brush 6 is replaced, the detachable polishing section 4 may be disposed in the housing 10 and replaced when the polishing section 4 is worn. Further, the polishing member 40 may be replaced when the polishing amount is small and below the threshold when the polishing amount is measured in the first polishing step, for example.

  In addition, as an SOC film forming apparatus, a coating unit 2 and a polishing unit 3 may be incorporated in a coating and developing apparatus that performs resist film coating and development processing. For example, as shown in FIG. 16, coating and developing in a configuration in which six layers of liquid processing blocks each provided with a liquid processing apparatus for performing liquid processing by supplying a coating liquid or a developing liquid to the wafer W by the processing station S2 is provided. The apparatus will be described.

In this coating and developing apparatus, a carrier station S1, a processing station S2, and an interface station S3 are connected in a straight line, and an exposure station is connected to the interface block S3. For example, the lowermost layer in the processing station S2 is provided with a polishing unit 103 that performs application and polishing of the raw material of the SOC film shown in FIG. 15 as a liquid processing apparatus, and the second layer from the bottom includes A coating unit 2 that performs coating of the raw material of the SOC film is provided as a liquid processing apparatus. Further, for example, a liquid processing unit (SiARC) for applying an antireflection film, a coating unit (COT) for applying a resist, and a two-layer development processing unit (DEV) for supplying a developing solution to perform development processing are provided in the lower layer. They are stacked in this order from the side. Each layer of the six-layer liquid processing block has a heating unit arranged on the left side when viewed from the carrier station S1 to the interface station S3, and a unit such as COT shown in FIG. 15 is arranged on the right side. ing. At the center of each layer, a transfer arm that moves along a straight line from the carrier station S1 to the interface station S3 is provided, and the wafer W of each unit tube is transferred.
In this example, the first application of the organic material of the SOC film raw material and the polishing and cleaning of the surface are performed in the polishing unit 103, and then the second application of the SOC film raw material is performed in the coating unit 2.

  Further, a coating unit 2 for applying the raw material of the SOC film as a liquid processing apparatus is provided in the lowermost layer in the processing block S2, and a polishing unit 103 for applying and polishing the raw material of the SOC film in the second layer from the bottom. May be provided. In this case, the raw material for the SOC film is applied for the first time in the coating unit 2, and then the coating film is polished and cleaned in the polishing unit 103, and then the organic material is continuously supplied to the wafer W. A second SOC film may be applied.

  Alternatively, as shown in FIG. 17, the polishing unit 3 may be provided between the carrier station S1 and the processing block S2, and the layer provided with the coating unit 2 in the processing block S2 may be configured in two stages. For example, in the coating unit 2 provided in the lowermost layer, after the first coating film 9 is applied to the wafer W, it is loaded into the polishing unit 3 and is applied in the second layer from the lower layer. A second coating film 9 may be applied. In such an example, since the film forming process on the upper layer of the coating film 9 from the coating, polishing, and heat treatment of the coating film 9 can be performed by processing a series of wafers W in the same apparatus, the throughput is reduced. And the number of devices can be reduced.

  In the coating and developing apparatus, a layer including the coating unit 2 may be provided, and the polishing unit 3 may be provided between the carrier station S1 and the processing block S2. In this case, for example, a buffer module for temporarily placing the wafer W in the coating and developing apparatus may be provided. Then, until the first coating of the coating film 9 on the series of wafers W transferred from the carrier C is completed, the first coating of the coating film 9 is completed and the wafer W after the polishing process is mounted on the buffer module. Then, after the first coating of the coating film 9 on the series of wafers W is completed, it may be transferred from the buffer module to the coating unit.

[Second Embodiment]
In the second embodiment of the present invention, a coating solution in which a block copolymer containing a first polymer and a second polymer of different types is dissolved in a solvent on a substrate having a guide pattern formed on the surface thereof. This is a technique for forming a pattern made of a polymer in a guide pattern through a process of forming a coating film by coating, polishing, and a phase separation process.
First, the background to the present invention will be described. FIG. 18A shows a state in which a base film 201 is formed on a wafer which is a substrate, and a resist pattern 202 which is a guide pattern is formed on the base film 201. Reference numeral 200 denotes a resist film, and a portion below the base film 201 is omitted in the figure.

  In this example, the recess 203 for forming the pattern is a hole, and the resist pattern includes an area where the hole 203 has a large arrangement density (area where the pattern is dense) and an area where the hole arrangement density is low (area where the pattern is sparse). Contains. In FIG. 18, the left side is a region with a dense pattern, and the right side is a region with a sparse pattern. When a block copolymer film (coating film) 204 is formed on the surface of such a substrate by applying a coating solution in which a block copolymer is dissolved in a solvent, the pattern becomes sparse as shown in FIG. The thickness of the block copolymer film 204 in such a region is larger than the thickness of the block copolymer film 204 in a dense pattern region. The reason is that in a region where the pattern is sparse, the amount of the coating liquid entering the pattern is small when viewed per unit area.

  When the block copolymer is phase-separated by heating the wafer in this state, as shown in FIG. 18C, in the region where the thickness of the block copolymer film 204 is small, from the surface to the bottom of the hole 203. However, in the region where the thickness of the block copolymer film 204 is large, the phase separation occurs outside the holes. As an example of a block copolymer, what consists of polystyrene (PS) which is a 1st polymer, and polymethylmethacrylate (PMMA) which is a 2nd polymer can be mentioned. In the following description, polystyrene is abbreviated as “PS” and polymethyl methacrylate is abbreviated as “PMMA”.

  In FIG. 18C, 205 is PS and 206 is PMMA. The PMMA 206 is separated in a cylindrical shape, and exists in the hole 203 in a region where the film thickness is small, but in a region where the film thickness is large, the cylinder is separated in a manner lying sideways on the upper side of the resist pattern. . Therefore, in a region where the PMMA 206 is separated above the resist pattern 202, even if a solvent for removing the PMMA 206 is supplied to the wafer, a hole surrounded by the PS 205 cannot be obtained.

  For this reason, in the present invention, processing is performed according to the procedure described below.

  19 to 20 show an embodiment of the pattern forming method of the present invention. First, as shown in FIG. 19A, a resist pattern 202 which is a guide pattern is formed on a wafer which is a substrate. In the figure, reference numeral 200 denotes a resist film, 201 denotes a base film, and 203 denotes a hole which is a recess corresponding to a pattern. The resist pattern includes a region having a large arrangement density of holes 203 (a region having a dense pattern), which is a left region in the drawing, and a region having a small arrangement density of holes, a region having a small pattern, which is a right region in the drawing. It shall contain.

Next, as shown in FIG. 19B, the surfaces of the resist film 200 and the base film 201 are made hydrophilic, and the entire surface of the wafer is irradiated with ultraviolet rays in order to improve the familiarity with the block copolymer liquid. This step is performed, for example, in a processing container that is an air atmosphere.
Subsequently, a coating solution in which a block copolymer containing at least two kinds of polymers, for example, a block copolymer containing PS and PMMA, is dissolved in a solvent is supplied onto the wafer. As an example of the coating liquid supply method, there is a spin coating method in which the coating liquid is supplied to the rotation center while rotating the wafer. In the resist pattern, a region where the arrangement density of the holes 203 is large and a small region are adjacent to each other. Therefore, as shown in FIG. A block copolymer film 204 is formed. Although the liquid film is in a state immediately after the coating liquid is supplied onto the wafer, the solvent is volatilized during the spin, so that the block copolymer film is also described in FIG. 19C.

Thereafter, the wafer is placed on, for example, a heating plate in the processing container, and heated at the first temperature as shown in FIG. 20 (d) to volatilize the solvent remaining in the block copolymer film 204. . The first temperature is a temperature at which the solvent in the block copolymer is volatilized without causing the layer separation of the block copolymer (BCP) substantially, and is, for example, 80 to 120 ° C.
Subsequently, in order to improve the affinity with the polishing pad used in the subsequent polishing process, the entire surface of the wafer is irradiated with ultraviolet rays as shown in FIG.

  Thereafter, the wafer surface is polished to flatten the block copolymer 204 film. As a polishing apparatus (unit) used for the polishing process, for example, the polishing apparatus shown in FIGS. 3 and 4 used in the first embodiment can be used. As the lubricant (addition liquid), for example, pure water can be used, and as the material of the polishing pad, for example, PVA (polyvinyl alcohol) can be used. As the polishing method, for example, the method described in the first embodiment is used. The same can be done. The polishing end point may be a position where, for example, the thickness of the block copolymer film 204 remains on the surface of the resist film 200, but the resist film 200 is exposed so that the upper surface of the resist film 200 is exposed. It may be a position where the upper block copolymer film 204 is removed. FIG. 20F shows a state in which the surface is planarized with a little block copolymer film 204 remaining on the surface of the resist film 200, for example.

  Subsequently, a cleaning process is performed by supplying a cleaning liquid to the surface of the wafer to remove shavings from the block copolymer film 200 during the polishing process. The cleaning process can be performed using, for example, a cleaning brush by discharging pure water as a cleaning liquid from an additive liquid nozzle provided in the polishing apparatus in the same manner as the cleaning process performed in the first embodiment. As the cleaning liquid, a solvent for dissolving the block copolymer, for example, the same solvent as that used in the coating liquid for the block copolymer can be used. By using a solvent as the cleaning liquid, the surface of the block copolymer film 204 is slightly dissolved, so that there is an advantage that dust such as shavings on the surface can be reliably removed. FIG. 21G schematically shows how the cleaning liquid flows along the surface of the block copolymer film 204 by the rotation of the wafer, and the dust PA is removed.

Next, a second temperature higher than the first temperature, which is the heating temperature at the time of the previous heat treatment performed for volatilization of the solvent, for example, 150 to 400 ° C., preferably 200 to 350 ° C., for example, 30 seconds. Heat the wafer for 10 minutes. As a heating method, for example, a wafer is placed on a heating plate. In the block copolymer film 204, PS and PMMA are randomly mixed, and PS and PMMA are phase-separated by heating at the second temperature. FIG. 21 (h) shows a phase-separated state. At the position where the hole 203 is arranged, the PS 205 is a cylindrical region along the inner wall of the hole 203. PMMA 206 is separated as a cylindrical region.
Since the surface of the block copolymer film 204 is flattened in this way and the film thickness above the holes 203 is constant, phase separation occurs in each hole 203, and FIG. The problem as shown does not occur.

  Next, after the wafer is cooled to room temperature, an ultraviolet irradiation process is performed in an inert gas atmosphere. For example, ultraviolet rays are irradiated (exposed) for 10 seconds to 60 seconds, for example, on a polymer film phase-separated using a Xe excimer lamp. By performing ultraviolet irradiation in this way, it is considered that a cross-linking reaction occurs in PS205 and it is difficult to dissolve in a solvent, whereas in PMMA 206, the main chain is cleaved and becomes easily soluble in a solvent.

  An example of an apparatus for performing ultraviolet irradiation processing is shown in FIG. This apparatus extends in the left-right direction into a space partitioned from the processing atmosphere via a quartz plate 213 that is an ultraviolet transmissive member at the ceiling of the processing container 212 in which the wafer transfer port 211 opened and closed by the shutter 210 is formed. An ultraviolet lamp 214 is arranged. Then, the wafer W is placed, and a moving mechanism 216 that can move in the front-rear direction (arrow direction in the figure) along the guide 215 is provided, and the wafer W is moved so as to pass through the irradiation region of the ultraviolet lamp 214. Reference numeral 217 denotes a supply pipe for nitrogen gas, which is an inert gas, 218 denotes an exhaust pipe, and 219 denotes a partition plate that partitions the processing space and the passage area of the driving portion of the moving mechanism.

  Thereafter, a solvent is supplied to the surface of the wafer, and PMMA 206 is dissolved and removed to leave PS 205 as shown in FIG. For example, isopropyl alcohol (IPA) is used as the solvent. For example, while rotating the wafer, the solvent is supplied to the center of the wafer to form a liquid film on the entire wafer surface, and then washed with pure water. Use to dry. Thus, holes 207 partitioned by PS 205 are formed on the wafer. The hole formed in the resist film 200 has a diameter of, for example, 90 nm, and the hole diameter formed by reducing the diameter of the hole by PS205 is, for example, 30 nm.

  In the second embodiment, the block copolymer film 204 is flattened by the polishing process even if a film thickness difference occurs due to the resist pattern, so that the subsequent phase separation can be performed satisfactorily. As a result, a good pattern can be formed. Therefore, the film thickness of the block copolymer film 204 is compared with the case where the block copolymer film 204 is formed in anticipation of a difference in film thickness as shown in FIG. Process margins such as setting are increased. If the block copolymer film 204 is flattened by ultraviolet irradiation treatment or dry etching, it may be altered (oxidized), but if it is flattened by polishing, there is no possibility of alteration, which is an effective technique.

  Next, an example of a pattern forming apparatus for forming a resist pattern as a guide pattern and forming a pattern using a polymer as described above will be described. The pattern forming apparatus can be configured as an apparatus in which a module necessary for forming a polymer pattern is incorporated in a so-called coating and developing apparatus for forming a resist film and developing the resist film after exposure. The coating / developing apparatus is configured by connecting a carrier block, a processing block, and an interface block for loading / unloading a carrier containing a wafer in a row, and an exposure apparatus is connected to the interface block.

  Specific examples of the coating and developing apparatus are shown in FIGS. 23 to 25. The carrier block T1 includes a stage 320 for carrying in and out the carrier C and a delivery arm 323 which is a substrate carrying mechanism. Assuming that the arrangement direction of the carrier block T1 and the processing block T2 is the Y ′ direction, the processing block T2 includes, for example, three stages of blocks, and each stage block has a main arm 370 movable in the Y ′ direction and a carrier block. A liquid processing module group U1 disposed on the right side of the transfer path of the main arm 370 as viewed from the T1 side and a heat treatment module group U2 on the left side of the transfer path of the main arm 370 are provided. Wafer distribution to the three-stage block is performed by the shelf unit U3 and the multi-arm 300 in which a plurality of delivery modules are stacked. The liquid processing module group U1 includes modules for spin-coating a coating liquid such as a resist liquid. For convenience of explanation, it is assumed that the liquid processing module group U1 also includes a module for supplying the polishing liquid to the wafer W and polishing. Further, the heat treatment module group U2 includes a module that performs processing by irradiating the wafer W with ultraviolet rays for convenience of explanation.

FIG. 23 is a cross-sectional plan view of the coating and developing apparatus shown along the height position of one block of the three blocks in the processing block T2. FIG. 24 is a longitudinal side view including a state where the left side of the conveyance path of the main arm 370 is viewed. FIG. 25 is a longitudinal side view including a state where the right side of the conveyance path of the main arm 370 is viewed.
In this example, the middle block is provided with a module for forming a resist film. The upper block is provided with a module for performing processing related to the application of a BCP (block copolymer) film after formation of the resist pattern and the reduction of the pattern diameter by the polymer. The lower block is provided with a module for developing the exposed resist film. Further, the transfer of the wafer W between the processing block T2 and the interface block T3 is performed by the shuttle transfer module 380.
In FIG. 23, reference numeral 400 denotes a control unit, which includes a memory that stores a program for controlling the coating and developing apparatus. The program is stored in a memory from a storage medium such as a compact disk, a magneto-optical disk (MO), or a memory card.

An outline of the operation of processing the wafer W by the coating and developing apparatus will be described.
When the cassette C containing the wafers W is carried into the carrier block T1, the wafers W are sequentially taken out by the delivery arm 323 and transferred to the delivery module 353 in the shelf unit U3 corresponding to the middle block. Next, the wafer W is transferred to the adhesion module 342 by the main arm 370 and subjected to an adhesion process. Thereafter, the wafer W is transferred to the resist coating module 332, and a resist solution is applied to form a resist film. Next, the wafer W is transferred to the heat treatment module 340 and prebaked, and then transferred to the peripheral exposure module 343 for peripheral exposure processing. In this way, the processing in the middle block is completed and conveyed to the delivery module 354 of the shelf unit U3.

  Thereafter, the wafer W is transferred to the transfer module 352 by the multi-arm 300, and transferred to the transfer module 362 of the shelf unit U4 by the shuttle transfer module 380. Thereafter, the wafer W is transferred to the exposure apparatus T4 by the wafer transfer module 310 of the interface block T3 and subjected to exposure processing. The wafer W subjected to the exposure process is transferred from the exposure apparatus T4 to the delivery module 360 by the wafer transfer module 310, and then transferred to the heat treatment module 340 by the main arm 370 of the lower block and subjected to post-exposure baking. Next, the wafer W is transferred to the developing module 330, developed, and then post-baked by the heat treatment module 340 to form a resist pattern as a guide pattern.

  The wafer W on which the resist pattern is formed is delivered to the main arm 370 of the upper block via the shelf unit U3 and the multi-arm 300. In the upper block, the wafer W is subjected to the ultraviolet irradiation process which is the process of FIG. 19B by the first hydrophilization module 344 to hydrophilize the surfaces of the resist film and the base film 201. Subsequently, the wafer W is subjected to the BCP liquid coating process shown in FIG. 19C by the BCP liquid coating module 334, and the heating process shown in FIG. Done at temperature.

  Thereafter, the wafer W is subjected to the ultraviolet irradiation process, which is the process of FIG. 20E, in the second hydrophilization module 345, and the surface of the BCP film is hydrophilized. The polishing process which is the process of f) is performed to flatten the BCP film. Then, while the polished wafer W is rotated by the spin chuck in the polishing module 335, the cleaning liquid is discharged from the nozzle above the wafer W to the center of the wafer W, and the cleaning process shown in FIG. I do. The cleaned wafer W is carried into the heating module 340, where the heat treatment, which is the first step shown in FIG. 21H of the annealing treatment, is performed at a second temperature higher than the first temperature. Thus, phase separation of BCP is performed. Further, the wafer W is carried into, for example, an ultraviolet irradiation module 346 having the configuration shown in FIG. 22, and ultraviolet irradiation, which is the second step of the annealing process, is performed in an inert gas atmosphere.

Thereafter, the processing described with reference to FIG. 21I is performed in the solvent supply module 336. That is, a solvent such as IPA is supplied to the surface of the wafer W, and PMMA separated from the BCP is dissolved and removed in the solvent. After that, PS remains and the resist pattern such as holes is reduced in diameter by PS. . That is, a pattern made of PS is formed, which can be said to be a development process. Next, the wafer W is transferred from the main arm 370 of the upper module to the wafer transfer module 323 of the carrier block T1 through, for example, the transfer module 356 multi-arm 300 and the transfer module 352 of the shelf unit U3 and returned to the carrier C.
The arrangement of the module group and the number of each module processing type shown in FIGS. 23 to 25 are for convenience of explanation, and are actually set in consideration of the processing time of each module.

In order to evaluate the present invention, an SOC film (coating film 9) is applied to a wafer W on which a pattern is formed, and then the surface is polished by the polishing unit 3 shown in FIGS. Evaluation was performed. The wafer W was provided with a region where a SiO ₂ film was formed and a pattern with a width dimension of 40 nm was formed densely and a region where a concave pattern with a width dimension of 100 μm was formed.
Example 1
An example of polishing by the polishing unit 3 shown in the first embodiment was taken as Example 1.
(Example 2)
Example 2 was performed in the same manner as in Example 1 except that the polishing member 40 of the polishing unit 3 was replaced with a polishing member 40 made of high-density polyethylene.
(Comparative Example 1)
Compared with the example in which polishing was performed in the same manner as in Example 1 except that water was not supplied from the additive solution nozzle 51 when polishing and the nitrogen gas nozzle 52 was not discharging gas to polish the wafer W. Example 1 was adopted.
(Comparative Example 2)
An example in which the polishing member 40 of the polishing unit 3 was polished in the same manner as in Example 1 except that the polishing member 40 made of polyurethane was used was used as Comparative Example 2.
(Comparative Example 3)
An example in which the polishing member 40 of the polishing unit 3 was polished in the same manner as in Example 1 except that the polishing member 40 made of Teflon (registered trademark) was used as Comparative Example 2.
(Comparative Example 4)
An example of polishing in the same manner as in Example 1 except that the polishing member 40 of the polishing unit 3 was replaced with a polishing member 40 made of diamond was used as Comparative Example 4.
(Comparative Example 5)
An example in which the polishing member 40 of the polishing unit 3 was polished in the same manner as in Example 1 except that the polishing member 40 made of chamois (deer tanned leather) was used as Comparative Example 5 was used.
(Comparative Example 6)
An example in which the surface of the wafer W was buffed with a polishing member 40 made of commercially available felt was set as Comparative Example 6.
(inspection result)
In the example of Example 1 and Example 2, the coating film 9 on the surface of the wafer W could be sufficiently removed. In Example 2, the surface of the polished wafer W was flat even when the amount of pure water supplied to the polishing member 40 was large. Therefore, it can be said that it is better to use high-density polyethylene as the polishing member 40.

  In Comparative Example 1, Comparative Example 2, and Comparative Example 5, the polishing member 40 slipped on the surface of the wafer W and could not be sufficiently polished. In Comparative Examples 3 and 4, the pattern 92 was broken and the coating film 9 was peeled off. Furthermore, in Comparative Example 6, it was possible to suppress the destruction of the pattern 92 by adjusting the rotation speed of the polishing member 40, but the surface of the coating film 9 after polishing was rough.

  26 to 29 show photographs of the surface portion including the cross section of the wafer W after the polishing process in Example 1 and Comparative Example 6, respectively, and (1) to (4) in FIG. -The site | part which FIG. 29 represents is shown. 26 to 29 are cross-sectional views of a region where a pattern 92 having a width dimension of 40 nm is densely formed in Example 1, a surface view of a region where the coating film 9 is embedded in a wide concave portion, and a coating film 9 in the concave portion. FIG. 29 is a cross-sectional view of a region where patterns 92 having a width dimension of 40 nm in Comparative Example 6 are densely formed.

  As shown in FIG. 26, it can be seen that in the region where the 40 nm pattern 92 is densely formed in Example 1, the coating film 9 which is an upper layer than the pattern 92 is removed to form a flat surface. 27 and 28, even when the coating film 9 is embedded in a wide recess, the coating film 9 above the height position of the upper surface of the pattern 92 is removed, and the surface is flat. You can see that it is a surface.

  On the other hand, in Comparative Example 6, it can be seen that the surface of the coating film 9 embedded in the depression 93 is rough as shown in FIG. According to this result, it can be said that the surface of the wafer W can be accurately planarized by using the polishing unit 3 of the present invention.

  Further, the height difference of the surface of the wafer W before and after the coating film 9 was polished and after the second coating film 9 was applied was measured. FIG. 31A shows a photograph of a cross section taken along the line II ′ shown in FIG. 30 before polishing the coating film 9, and FIG. 31B shows polishing performed in Example 1, and then the second coating. The photograph of the cross section of II 'shown in FIG. 30 after apply | coating the film | membrane 9 is shown. Before the polishing and after the second coating film 9 is applied, the height of the surface of the coating film 9 in the central blanket region A in the photographs of FIGS. 31 (a) and 31 (b) is used as a reference. 31 (a) and 31 (b), the height of the surface of the coating film 9 in P1 of the concave region C located on the left side in the photograph, and the line and located on the right side in the photograph in FIGS. 31 (a) and 31 (b). The height of the surface of the coating film 9 in P2 of the space region B was measured.

  Before the coating film 9 was polished, the surface of the coating film 9 in P1 was 90 nm lower than the height of the surface of the coating film 9 in the blanket region A, and the surface of the coating film 9 in P2 was 46 nm lower. On the other hand, after polishing according to Example 1 and subsequent coating of the coating film 9, the surface of the coating film 9 in P1 is 16 nm lower than the height of the surface of the coating film 9 in the blanket region A. The surface of the coating film 9 in P2 was 28 nm higher. Therefore, the height difference before polishing of the coating film 9 was 90 nm, but the wafer W after polishing according to Example 1 and then coating the coating film 9 for the second time had a height difference of 44 nm. You can see that it is getting smaller. According to the embodiment of the present invention, it can be said that the surface of the coating film 9 formed on the wafer W can be planarized.

2 Coating unit 3 Polishing unit 4 Polishing unit 5 Heating unit 6 Cleaning brush 8 Control unit 9 Coating film 30 Cup body 11 Spin chuck 21-23 First to third arms 40 Polishing member 51 Additive liquid nozzle 52 Nitrogen gas nozzle 44 Standby Part 43 CCD camera 92 Pattern 93 Indentation part A Blanket area B Line and space area C Recessed area W Wafer 202 Resist pattern 201 Recessed hole 204 Block copolymer film 205 Polystyrene (PS)
206 Polymethylmethacrylate (PMMA)

Claims (10)

A polishing apparatus that is formed on a substrate having a step on the surface, is an organic film mainly composed of carbon, and polishes and flattens a coating film that is cured by a crosslinking reaction before curing,
A substrate holder for holding the substrate;
A polyvinyl alcohol or Ranaru polishing member for polishing the coating film on the surface of the substrate,
A drive unit that relatively moves the polishing member along the surface of the substrate held by the substrate holding unit;
An additive liquid supply unit for supplying an additive liquid to wet the polishing member and the surface of the substrate ;
The drive unit includes a rotation mechanism that rotates the substrate holding unit,
The additive solution supply unit is provided so as to supply the additive solution to a position away from the contact portion between the substrate and the polishing member in the rotation direction of the substrate,
In the rotation direction of the substrate, a regulating part for regulating the amount of the additive liquid flowing toward the polishing member is provided between the supply position of the additive liquid supplied by the additive liquid supply part and the contact portion. Polishing equipment. A measuring section for measuring the height of the surface of the coating film;
Control for obtaining the height distribution of the surface of the coating film based on the measurement result measured by the measurement unit, and controlling an adjustment factor for adjusting the polishing amount according to the polishing position based on the obtained height distribution. the polishing apparatus according to claim 1, characterized in that and a control unit for outputting a signal. The number of scans for scanning the entire surface of the coating film to polish the entire surface is set a plurality of times,
The control unit controls the adjustment factor in the (n + 1) th scanning based on the height distribution of the surface of the coating film polished by the nth scanning (n is a natural number of 1 or more). The polishing apparatus according to claim 2 . The abrasive member polishing apparatus according to any one of claims 1 to 3, characterized in that it is constituted by a porous body. It has a film thickness measurement unit that measures the height distribution of the coating film,
The polishing member is relatively moved along the surface of the substrate held by the substrate holding unit while adjusting the polishing amount of the coating film according to the height distribution of the coating film measured by the film thickness measuring unit. the polishing apparatus according to any one of claims 1 to 4, characterized in that polishing by. In an apparatus for forming a coating film on a substrate having a step on the surface,
An application part for applying a chemical solution containing a precursor of the coating film to the surface of the substrate;
A polishing apparatus according to any one of claims 1 to 5 ,
A coating film forming apparatus, comprising: a heat treatment unit that heat-treats the coating film on the substrate polished by the polishing apparatus and cures the coating film by a crosslinking reaction. In a method for forming a coating film that is an organic film mainly composed of carbon on a substrate having a step on the surface and cured by a crosslinking reaction,
Applying a chemical solution containing a precursor of the coating film to the surface of the substrate;
Before curing respect coating film formed on the surface of the substrate by this process, the polyvinyl alcohol or Ranaru polishing member, the additive solution to the wetted and the polishing member and the surface of the substrate Polishing and flattening the coating film while supplying,
Then, the step of curing the coating film by a crosslinking reaction ,
The step of polishing and flattening the coating film includes a step of supplying an additive liquid from an additive liquid supply unit to the surface of the substrate while rotating the substrate, and a step of bringing a polishing member into contact with a portion through which the additive liquid flows And including
Forming a coating film , further comprising a step of regulating the amount of the additive liquid flowing toward the polishing member between the supply position of the additive liquid by the additive liquid supply unit and the polishing member in the circumferential direction of the substrate Method. The coating film forming method according to claim 7 , wherein the polishing member is made of a porous body. Including the step of measuring the height distribution of the coating film by the film thickness measuring unit,
The step of polishing and flattening the coating film is performed by moving the polishing member relatively along the surface of the substrate according to the height distribution of the coating film measured by the film thickness measuring unit. The method for forming a coating film according to claim 7 or 8 , wherein the polishing is performed by adjusting the polishing amount. A storage medium for storing a computer program used in an apparatus for forming a coating film to be cured by a crosslinking reaction, which is an organic film mainly composed of carbon on a substrate having a step on the surface,
A storage medium, wherein the computer program includes a group of steps so as to execute the coating film forming method according to any one of claims 7 to 9 .

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