CN112509967A - 边缘环和具有边缘环的热处理设备 - Google Patents
边缘环和具有边缘环的热处理设备 Download PDFInfo
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Abstract
本发明提供一种边缘环和具有边缘环的热处理设备。边缘环包含具有环形形状的主体。主体包含:衬底支撑部件,配置成支撑衬底的底部表面的边缘;外带,设置于衬底支撑部件的外部,且具有一顶部表面,所述顶部表面高于衬底支撑部件的顶部表面且平行于由衬底支撑部件支撑的衬底的顶部表面;外侧壁,设置于外带的外部;以及凹槽部件,设置于衬底支撑部件与外带之间。
Description
技术领域
本发明涉及一种边缘环和具有所述边缘环的热处理设备,且更确切地说,涉及一种在热处理期间改善衬底的温度均匀性的边缘环,以及具有所述边缘环的热处理设备。
背景技术
当在热处理工艺中处理衬底时,衬底接触腔室内的边缘环,且因此由边缘环支撑。接着,使用安置于衬底上方的加热源加热衬底的顶部表面,且在加热完成之后,冷却衬底。此处,边缘环直接接触衬底,以在加热和冷却期间与衬底进行热交换,从而根据环境温度的改变灵敏性地改变温度。由边缘环支撑的衬底的边缘区可与气体供应相邻,所述气体供应供应工艺气体以与工艺气体反应,所述工艺气体根据工艺气体在一个方向(例如在单个平面方向)上的流动而比衬底的中心区相对更少加热,且导致衬底与边缘环之间的温度偏差,从而导致衬底的边缘区的中心区之间的温度不均匀性,且难以确保衬底的温度均匀性。在衬底的快速热处理(rapid thermal processing;RTP)中,温度不均匀性可能更严重。
确切地说,在工艺衬底具有微装置结构的情况下,微装置之间可能出现温度不均匀性,且因此,质量可能根据微装置而改变,从而降低产品的可靠性。
此外,当衬底的中心区与边缘区之间的温度偏差严重时,可能发生衬底的扭曲和/或翘曲,可能发生聚焦误差,且良率可能降低。
[现有技术文献]
[专利文献]
韩国专利公开案第10-2005-0017782号
发明内容
本发明提供一种在热处理期间支撑具有改善的温度均匀性的衬底的边缘环以及具有所述边缘环的热处理设备。
根据示例性实施例,一种边缘环包含:主体,具有环形形状,其中主体包含:衬底支撑部件,配置成支撑衬底的底部表面的边缘;外带,设置于衬底支撑部件的外部,且具有一顶部表面,所述顶部表面高于衬底支撑部件的顶部表面且平行于由衬底支撑部件支撑的衬底的顶部表面;外侧壁,设置于外带的外部;以及凹槽部件,设置于衬底支撑部件与外带之间。
凹槽部件可包含:底板,设置于比外带更低的高度;内侧壁,从底板的顶部表面突出;以及连接侧壁,配置成将外带连接到底板。
连接侧壁可具有配置成将外带的顶部表面连接到底板的顶部表面的内部表面,且内部表面可至少部分地具有一区域,在所述区域中随着内部表面的高度降低,内部表面接近内侧壁。
内侧壁的上部末端可具有与由衬底支撑部件支撑的衬底的顶部表面相同的高度,或具有比衬底的顶部表面更高的高度。
底板可设置于一高度处,所述高度小于由衬底支撑部件支撑的衬底的顶部表面的高度。
边缘环可更包含由构成主体的元素中的任一种的氧化物制成且涂布于主体的至少一部分上的涂层。
涂层可具有在400纳米到1,500纳米范围内选择的厚度。
根据另一示例性实施例,一种热处理设备包含:腔室,具有其中执行热处理工艺的内部空间;根据示例性实施例的边缘环,所述边缘环设置于腔室的内部空间中;加热源,安置于边缘环上方,以向由边缘环支撑的衬底提供热能;气体供应部件,设置于腔室的一侧处,以供应工艺气体;以及排气部件,设置于腔室的另一侧处以面向气体供应部件,从而排出腔室内的剩余气体。
加热源可具有比衬底的面积更大的面积,且加热源的至少一部分可设置于边缘环的凹槽部件上方,以向凹槽部件提供热能。
热处理设备可更包含使边缘环旋转的旋转支撑部件,且旋转支撑部件可包含支撑环,边缘环支撑于所述支撑环上。
附图说明
通过结合附图进行的以下描述可更详细地理解示例性实施例,在所述附
图中:
图1是示出根据示例性实施例的边缘环的视图。
图2是示出根据示例性实施例的边缘环的修改实例的视图。
图3是示出根据示例性实施例的包含涂层的边缘环的视图。
图4是用于解释根据示例性实施例的通过边缘环改善衬底的温度均匀性的视图。
图5是示出根据另一示例性实施例的热处理设备的视图。
附图标号说明
10:衬底;
100:边缘环;
110:主体;
111:衬底支撑部件;
111a:板;
111b:支撑顶端;
112:外带;
113:外侧壁;
114:凹槽部件;
114a:底板;
114b:内侧壁;
114c:连接侧壁;
120:涂层;
200:热处理设备;
210:腔室;
220:加热源;
230:气体供应部件;
240:排气部件;
250:旋转支撑环;
251:支撑环;
252:底板;
A-A':线。
具体实施方式
下文中,将参看附图更详细地描述具体实施例。然而,本发明可以不同的形式体现,且不应解释为限于本文中所阐述的实施例。确切地说,提供这些实施例使得本发明将是透彻且完整的,且这些实施例将向所属领域的技术人员完整地传达本发明的范围。在描述中,相同元件用相同附图标号表示。在附图中,出于说明清楚起见而放大层和区的尺寸。相同附图标号在全文中指代相同元件。
图1是示出根据示例性实施例的边缘环的视图。此处,图1的(a)是边缘环的透视图,且图1的(b)是沿线A-A'截取的边缘环的横截面视图。
参考图1,根据示例性实施例的边缘环可包含具有环形形状的主体110。主体110可包含:衬底支撑部件111,支撑衬底10的底部表面的边缘;外带112,设置于衬底支撑部件111的外部,且具有一顶部表面,所述顶部表面高于衬底支撑部件111的顶部表面且平行于由衬底支撑部件111支撑的衬底10的顶部表面;外侧壁113,设置于外带112的外部;以及凹槽部件114,设置于衬底支撑部件111与外带112之间。
根据示例性实施例的边缘环100可以是用于快速热处理(RTP)装置中的边缘环100,所述快速热处理装置通过使用利用光的辐射能量加热衬底10。
主体110可具有环形形状,且配置成支撑衬底10的底部表面的边缘。主体可包含衬底支撑部件111、外带112、外侧壁113以及凹槽部件114。
衬底支撑部件111可支撑衬底10的底部表面的边缘,且安置于主体110的最内侧处。此处,衬底支撑部件111可提供支撑表面,衬底10可稳定地支撑于所述支撑表面上,且设置为具有环形形状的板111a。衬底10可支撑于从板111a的顶部表面突出的支撑顶端上。
外带112可设置于衬底支撑部件111的外部,且具有顶部表面,所述顶部表面高于衬底支撑部件111的顶部表面且平行于支撑于衬底支撑部件111上的衬底10的顶部表面。此处,当衬底支撑部件111具有支撑顶端111b时,支撑顶端111b的上端表面可以是衬底支撑部件111的顶部表面。外带112可安置于衬底支撑部件111的外部,以诱导工艺气体的流动。外带112可具有与支撑于衬底支撑部件111上的衬底10的顶部表面平行的顶部表面,以形成与衬底10的顶部表面平行的工艺气体的流动。此处,外带112的顶部表面可具有与衬底的顶部表面相同的高度,且通过彼此相对的气体供应部件230和排气部件240将工艺气体沿着外带112的顶部表面诱导到衬底10的顶部表面,从而在衬底10上形成层流。
外侧壁113可设置于外带112的外部,以在边缘环100支撑于旋转支撑环250的支撑环251上时诱导边缘环100的对准,且防止边缘环100在左方向和右方向上(或水平方向上)移动(或摇晃)。举例来说,外侧壁113可从外带112向下延伸,以用作覆盖支撑环251的侧壁的侧壁盖,且通过将外侧壁113钩连于支撑环251的侧壁上来防止边缘环100在左方向和右方向上移动。
凹槽部件114可设置于衬底支撑部件111与外带112之间,以界定比外带112的顶部表面和衬底10的顶部表面更低的空间。凹槽部件114可具有带有底部表面和两个侧壁的凹槽形状。沿着外带112的顶部表面(或表面)移动的工艺气体可引入到凹槽部件114中,且接着充分加热。接着,由于通过对流加热的工艺气体的上升和工艺气体的连续引入而被加热的加热工艺气体可从凹槽部件114排放,以沿着衬底10的顶部表面流动。
因此,工艺气体可在充分加热之后供应到衬底10。因此,可防止衬底10的边缘由于工艺气体而温度降低。因此,衬底10的中心区与边缘区之间的温度偏差可最小化,以改善衬底10的温度均匀性。
凹槽部件114可包含:底板114a,设置于比外带112更低的高度处;内侧壁114b,从底板114a的顶部表面突出;以及连接侧壁114c,将外带112连接到底板114a。底板114a可设置于比外带112更低的高度处,以提供凹槽部件114的底部表面,且底板的顶部表面可安置成低于外带112的顶部表面和衬底10的顶部表面中的每一个。
内侧壁114b可从底板114a的顶部表面突出,且设置于底板114a与衬底支撑部件111之间以将凹槽部件114与衬底支撑部件111进行区分,且与底板114a和连接侧壁114c一起界定凹槽(或内部空间)。此处,内侧壁114b可设置成面向连接侧壁114c。举例来说,内侧壁114b可具有从底板114a突出的肋形状,使得仅连接其下部末端。
连接侧壁114c可设置于外带112与底板114a之间,以将外带112连接到底板114a,且通过外带112与底板114a之间的高度差提供侧壁。此处,连接侧壁114c可设置成面向外侧壁113以及内侧壁114b,且可与外侧壁113和外带112一起围绕支撑环251。因此,支撑环251的至少一部分可插入(装配)到由外侧壁113、外带112以及连接侧壁114c界定的空间中,使得边缘环100通过旋转支撑部件250的支撑环251来支撑。
图2是示出根据示例性实施例的边缘环的修改实例的视图。此处,图2的(a)示出边缘环的实例,图2的(b)示出其中底板安置成低于衬底支撑部件的边缘环,图2的(c)示出其中衬底支撑部件包含支撑顶端的边缘环,以及图2的(d)示出其中内侧壁为倾斜的边缘环。
参考图2,连接侧壁114c可具有将外带112的顶部表面连接到底板114a的顶部表面的内部表面,且内部表面可至少部分地具有(或包含)随着内部表面高度降低而接近内侧壁114b的区域。举例来说,连接侧壁114c的内部表面可以是倾斜的或圆形的,使得外带的顶部表面112与内部表面之间的高度差随着内部表面接近内侧壁114b而增加。也就是说,连接侧壁114c的内部表面可如图2的(d)中所示朝向主体110的内部(或内侧壁)向下倾斜,或可被圆化以逐渐减小连接侧壁114c的内部表面从外带112的顶部表面到底板114a的顶部表面的倾斜度。此处,连接侧壁114c整体上可以是倾斜的或圆形的(也就是说,连接侧壁的所有内部表面和外部表面),或仅连接侧壁114c的内部表面可以是倾斜的或圆形的。或者,连接侧壁114c的内部表面整体上可以是倾斜的或圆形的,或可以是部分倾斜的或圆形的。
在这种情况下,工艺气体可沿着连接侧壁114c的内部表面稳定地诱导到凹槽部件114的内部空间(或凹槽),凹槽部件114的内部空间的体积可增加,且可在凹槽部件114的内部空间中有效地加热工艺气体。当连接侧壁114c垂直安置(或具有直角)时,工艺气体可仅通过凹槽部件114的内部空间与外部空间之间的气压差而引入到凹槽部件114的内部空间中。此处,当工艺气体填充到凹槽部件114的内部空间中以减小凹槽部件114的内部空间与外部空间之间的气压差时,工艺气体可能不能适当地引入到凹槽部件114的内部空间中,且因此可能不能充分加热,且接着流动到衬底10。然而,当连接侧壁114c的内部表面以与上文所描述相同的形状倾斜或圆化时,可沿着连接侧壁114c的内部表面以及凹槽部件114的内部空间与外部空间之间的气压差来诱导工艺气体,且因此有效地引入到凹槽部件114的内部空间中,且还在凹槽部件114的内部空间中充分加热。因此,有可能有效地防止衬底10的边缘区的温度受未充分加热的工艺气体而相对降低。
内侧壁114b的上部末端可具有等于或高于由衬底支撑部件111支撑的衬底10的顶部表面的高度。当内侧壁114b的上部末端比由衬底支撑部件111支撑的衬底的顶部表面更低时,工艺气体的至少一部分可能不会被内侧壁114b阻挡,且因此尽管由于凹槽部件114而导致的电流下降,也可能不会将其引入到凹槽部件114的内部空间中,且因此,工艺气体的一部分可直接流动到衬底10的顶部表面。因此,由于工艺气体由于直接流动到衬底10的顶部表面而未充分加热,因此衬底10的边缘区的温度可能相对降低。
然而,在此实施例中,当内侧壁114b的上部末端具有与由衬底支撑部件111支撑的衬底10的顶部表面相同的高度或比衬底10的顶部表面更高时,工艺气体在流动到衬底10的顶部表面之前可能受到由于凹槽部件114而导致的下降电流阻挡。因此,工艺气体可能未充分加热,且防止工艺气体流动到衬底10的顶部表面。因此,有可能防止衬底10的边缘区的温度由于未充分加热的工艺气体的供应而相对降低。
此处,外带112的顶部表面可安置于与衬底10的顶部表面相同的高度处,且内侧壁114b的上部末端可安置于与衬底10的顶部表面相同的高度处。在这种情况下,通过由于凹槽部件114而导致电流下降,工艺气体可被内侧壁114b阻挡,且气体供应部件230的供应孔和排气部件240的排放孔可沿着衬底10的顶部表面(即,外带的顶部表面、内侧壁的上部末端以及衬底的顶部表面)面向彼此,以在衬底10上有效地产生层流。
底板114a可设置于比由衬底支撑部件111支撑的衬底10的顶部表面更低的高度处。也就是说,工艺气体可在界定于比衬底10的顶部表面低的高度处的空间中加热,且接着流动通过内侧壁114b,以沿着衬底10的顶部表面流动。因此,工艺气体可很好地在衬底10上反应。当底板114a安置于与衬底10的顶部表面相同的高度处或安置成比衬底10的顶部表面更高时,工艺气体可在界定为比衬底10的顶部表面更高的空间中加热,且可能难以允许工艺气体沿着内侧壁114b移动到更高位置以沿着衬底10的顶部表面流动。因此,工艺气体可能不会在衬底10上有效地反应。因此,底板114a可设置成比由衬底支撑部件111支撑的衬底10的顶部表面更低,使得在加热之后流动通过内侧壁114b的工艺气体沿着衬底10的顶部表面流动,以在衬底10上有效地反应。
底板114a可设置成比支撑衬底10的衬底支撑部件111更低,凹槽部件114的内部空间的体积可增加,且边缘环100的主体的表面面积可增加。当凹槽部件114的内部空间的体积增加时,大量的工艺气体可有效地加热,且当主体110的表面面积增加时,边缘环100的暴露表面面积与质量的比率可增加,以减小加热期间的径向温度梯度。另外,当主体110的表面面积增加时,由于表面面积的增加,边缘环100的方位角热导率可通过增加的质量而改善。在根据示例性实施例的边缘环100中,边缘环100的方位角和径向变形可减小,且边缘环100与衬底10之间的热交换的均匀性可提高,以改善热处理均匀性。
图3是示出根据示例性实施例的包含涂层的边缘环的视图。
参考图3,根据示例性实施例的边缘环100可更包含由构成主体110的元素中的任一种的氧化物制成且涂布于主体110的至少一部分上的涂层120。
涂层120可涂布(或涂覆)于主体110的至少一部分上,且可由构成主体110的元素中的任一种的氧化物制成。举例来说,涂层120可在经过处理的主体110的清洁过程之后通过湿式和/或干式方法形成,或可形成于主体110的整个表面或一部分上。因此,主体110的特定区的厚度可增加或减小。
在示例性实施例中,涂层120可涂布于主体110的至少一部分上,使得边缘环100在机械硬度和热导率方面增加。而且,涂层120可减少边缘环100的热变形和化学损坏,并且边缘环100可具有对污染和颗粒的强抵抗力。
举例来说,由氧化物制成的涂层120可具有耐高温性和高硬度,且还可具有即使在大约600℃或大于600℃的高温下也不会劣化的物理特性和化学特性。因此,可防止由边缘环100支撑的衬底10和边缘环100在高温下彼此接合,且可最小化在衬底10和/或边缘环100上出现的划痕的发生。此外,衬底10和/或边缘环100的划痕的发生可最小化,以抑制或防止颗粒的发生。
涂层120的厚度可在大约400纳米到大约1,500纳米范围内选择且可根据工艺条件在大约400纳米到大约1,500纳米范围内选择。当涂层120的厚度小于大约400纳米时,涂层120可能不能适当地用作保护层,以减小对主体110的损坏,且可能不能提供边缘环100的足够的机械硬度。此外,由于主体110未充分涂布,因此边缘环100可能对污染物和颗粒不具有强抵抗力。
另一方面,当涂层120的厚度大于大约1,500纳米时,边缘环100可具有足够的机械硬度。然而,边缘环100的整体厚度可增加,以允许上部表面的位置整体上更高,且可能不能有效地形成工艺气体的层流。此外,由于边缘环100的较大厚度,可能难以将旋转支撑部件250接合到支撑环251,且难以允许边缘环100旋转,且凹槽部件114的凹槽(或空间)的体积还可能减小。此外,由于边缘环100的热导率显著增加,使得加热的边缘环100的温度转移到衬底10的边缘区,所以衬底10的边缘区的温度甚至可高于衬底10的中心区的温度。由于在主体110上涂布涂层120时增加涂层120的厚度花费了大量时间(也就是说,涂层的沉积速率或涂布速率降低),当涂层120的厚度大于大约1,500纳米时,在制造边缘环100时不必要的时间可能增加。此外,由于不必要的涂布时间而产生不必要的成本。
主体110可包含构成衬底10的元素,且涂层120可由构成衬底10的元素的氧化物制成。举例来说,主体110可由碳化硅(SiC)制成,且涂层120可以是氧化硅膜(SiOx)。主体110可包含构成衬底10的元素,且因此由具有与衬底10的热容量类似的热容量的材料制成。当衬底10是硅(Si)衬底时,主体110可由碳化硅(SiC)制成以处理Si衬底。此处,主体110可通过烧结粉末材料且接着机械处理烧结的粉末材料来形成。
当衬底10是Si衬底时,涂层120可以是由氧化硅制成的氧化硅膜(SiOx)。此外,由于对于用于测量衬底10的温度的频率范围内的辐射是透明的,且能够传输可能影响温度测量的散射辐射热的主体110被涂布,所以边缘环100可制造成相对于辐射热是不透明的。此外,由于材料的特性,由碳化硅(SiC)制成的主体110在其表面上可具有细小间隙,且由于机械处理而产生的颗粒可保留在主体110的表面上。在这种情况下,当在处理期间在细小间隙中捕获剩余材料时,剩余材料可能不会排出到排气部件240,而是与工艺气体一起引入以充当颗粒,且由于机械处理而残留在主体110的表面上的颗粒可与工艺气体一起引入到衬底10上。
然而,当由碳化硅(SiC)制成的主体110涂布有涂层120时,可填充细小间隙以通过排气部件240有效地排出剩余材料,从而防止或抑制由于剩余材料残留在边缘环100的表面上而导致的颗粒作用,且还由于机械处理而残留在主体110的表面上的颗粒可一起涂布,以防止由于机械处理而残留在主体110的表面上的颗粒在处理期间与工艺气体一起引入到衬底10上。此外,涂层120是使用由氧化硅制成的氧化硅膜(SiOx)形成,涂层120可仅通过氧化设置于主体110的表面上的硅(Si)而容易地形成,且涂层120可共享与主体110相同的元素(即,硅元素),以改善主体110和涂层120的接合。
当涂层120的厚度小于大约400纳米时,因为由于机械处理而残留在主体110的表面上的颗粒未完全涂布,所以涂层120可形成为具有在大约400纳米到大约1,500纳米范围内选择的厚度,以完全涂布(或涂覆)由于机械处理而保留在主体的表面上的颗粒。
图4是用于解释根据示例性实施例的通过边缘环改善衬底的温度均匀性的视图。此处,图4的(a)示出根据现有技术的边缘环,图4的(b)示出具有竖直的连接侧壁的边缘环,以及图4的(c)示出具有倾斜的连接侧壁的边缘环。
参考图4,在根据现有技术的不具有凹槽部件114的边缘环中,如图4的(a)中所示,衬底10的边缘区的温度是不均匀的。然而,如图4的(b)和图4的(c)中所示,如果设置凹槽部件114,那么边缘区的温度可以是均匀的。
因此,根据示例性实施例的边缘环100可诱导工艺气体流动通过凹槽部件114,使得工艺气体在凹槽部件114中充分加热之后流动到衬底10,以防止衬底10的边缘区的温度因工艺气体而相对降低,从而允许衬底10的边缘区的温度均匀。因此,衬底10的中心区与边缘区之间的温度偏差可最小化,以改善衬底10的温度均匀性。因此,可防止衬底10的扭曲和/或翘曲,以提高产品的良率。
图5是示出根据另一示例性实施例的热处理设备的视图。
将参考图5描述根据另一示例性实施例的热处理设备。在根据另一示例性实施例的边缘环的描述中,将省略与根据前述实施例的边缘环重复的描述。
根据另一示例性实施例的热处理设备200可包含:腔室210,具有其中执行热处理工艺的内部空间;根据示例性实施例的边缘环100,设置于腔室210的内部空间中;加热源220,安置于边缘环100上方以向由边缘环100支撑的衬底10提供热能;气体供应部件230,设置于腔室210的一侧处以供应工艺气体;以及排气部件240,设置于腔室210的另一侧处以面向气体供应部件230,从而排出腔室210中的剩余气体。
腔室210可具有内部空间,在所述内部空间中执行热处理工艺,界定处理空间且形成工艺气氛。举例来说,由石英制成的窗可设置于腔室210的顶部表面中,且加热源220可安置于窗上。
边缘环100可设置于腔室210的内部空间中,以支撑腔室210内的衬底10。边缘环100可以是根据示例性实施例的边缘环,且具有凹槽部件114,以防止衬底10的边缘区的温度因工艺气体而降低,从而允许衬底10的边缘区的温度均匀。
加热源220可安置于边缘环100上方,以向由边缘环100支撑的衬底10提供热能。此处,加热源220可将辐射能量提供到腔室210的内部空间,且将辐射能量转移到衬底10以加热衬底。
举例来说,加热源220可包含设置于边缘环100上方的多个灯。多个灯中的每一个可包含卤素灯,且可产生通过腔室210的窗引入到腔室210的内部空间中的辐射热。此外,多个灯可布置在多个区中,所述区一起分类成几个控制组,且灯可通过温度控制算法来控制,以控制衬底10的温度。
气体供应部件230可设置于腔室210的一侧处,以供应工艺气体。此处,气体供应部件230可供应温度低于热处理工艺中的温度的工艺气体。也就是说,在执行热处理工艺时,气体供应部件230可将工艺气体供应到腔室210的内部空间(腔室的窗与衬底之间的空间)中。在工艺气体供应到腔室210的内部空间中之后,没有反应而保留在衬底10上的剩余气体可通过排气部件240排出(或排放)。
排气部件240可设置于腔室210的另一侧处以面向气体供应部件230,从而排出腔室210内的剩余气体。此处,排气部件240的排气孔可界定为面向气体供应部件230的注入孔。线性气流可由气体供应部件230的注入孔和排气部件240的排气孔形成。举例来说,腔室210内的剩余气体可通过连接到真空泵(未示出)的排出口穿过排气部件240的排气孔排出。
此处,外带112的顶部表面、内侧壁114b的上部末端(表面)以及衬底10的顶部表面可安置于同一高度处,以分别提供基本上平坦的顶部表面(或表面)。气体供应部件230的注入孔和排气部件240的排气孔可设置于平坦顶部表面的延伸线上(即,与外带的顶部表面、内侧壁的上部末端表面以及衬底的顶部表面相交的线),以面向彼此。因此,可允许穿过平坦顶部表面的工艺气体的平缓流动,且可在衬底10上形成层流。
根据另一示例性实施例的热处理设备200可以是快速热处理(RTP)设备。
加热源220可具有比衬底10的面积更大的面积,且加热源220的至少一部分可设置于边缘环100的凹槽部件114上方,以向凹槽部件114提供热能。在另一示例性实施例中,由于引入到凹槽部件114中的工艺气体必须加热,所以加热源220可设置于边缘环100以及在其上直接执行热处理的衬底上方。对此,加热源220可具有比衬底10的面积更大的面积,且设置于边缘环100的上方。此处,加热源220可至少设置于边缘环100的凹槽部件114上方,且因此,可有效地加热引入到凹槽部件114中的工艺气体。因此,有可能防止衬底10的边缘区的温度因未充分加热的工艺气体而降低。举例来说,灯可安置于边缘环100的凹槽部件114上方。此处,可将多个灯当中安置于凹槽部件114上方的灯分组在一起。
根据另一示例性实施例的热处理设备200可更包含使边缘环100旋转的旋转支撑部件250,且旋转支撑部件250可包含支撑环251,边缘环100支撑于支撑环251上。
旋转支撑部件250可包含支撑环251,边缘环100支撑于支撑环251上,以允许所支撑的边缘环100旋转。支撑环251可支撑边缘环100,且具有环形形状或圆柱形形状。可支撑边缘环100以包围支撑环251。举例来说,支撑环251可由石英制成,且硅可涂布(或涂覆)作为阻挡来自加热源220的辐射的屏蔽,这可能干扰衬底10的温度测量。因此,支撑环251在高温计的频率范围内可以是不透明的。
旋转支撑部件250可使所支撑的边缘环100旋转,使得衬底10旋转。此外,旋转支撑部件250可允许边缘环100和/或衬底10上升(或垂直移动)。举例来说,旋转支撑部件250可允许衬底10在执行热处理工艺时旋转。此处,衬底10可以大约每分钟90次的速率旋转,且耦接到驱动系统(未示出)的支撑环251可旋转以允许边缘环100旋转。此处,旋转支撑部件250可更包含支撑支撑环251的底板252,且驱动系统(未示出)可设置于底板252上。
工艺气体可平行于衬底10的顶部表面设置。工艺气体可不垂直于衬底10的顶部表面朝向衬底10的顶部表面供应,而是平行于衬底10的顶部表面在衬底10的横向方向(或从侧表面)供应。因此,可在衬底10上形成层流。也就是说,工艺气体可沿着基本上平坦的顶部表面平行于衬底10的顶部表面流动,所述顶部表面由外带112的顶部表面、内侧壁114b的上部末端(表面)以及衬底10的顶部表面界定,且剩余气体可在衬底10上反应之后通过排气部件240安置。因此,可通过气体的流动在衬底上形成层流。
此外,凹槽部件114可相对于边缘环100的中心轴线对称地设置。工艺气体可从衬底10的一侧供应,以平行于衬底10的顶部表面穿过衬底10的顶部表面。然而,由于边缘环100在执行热处理工艺时旋转,所以用于在衬底10上进行均匀热处理的凹槽部件114可相对于边缘环100的中心轴线对称安置。举例来说,凹槽部件114可沿着边缘环的衬底支撑部件111的圆周界定,且具有环形形状的凹槽可在主体110中界定。在这种情况下,即使边缘环100旋转,由于凹槽部件114设置于供应工艺气体的方向上,所以在凹槽部件114中充分加热的空气可转移到衬底10。因此,即使当衬底10旋转时,也可在衬底10上执行均匀热处理。
在根据另一示例性实施例的热处理设备200中,结构形状可通过形状的改变而与衬底10直接接触的面积来最优化。此外,涂层120可设置于主体110的表面上,以提高边缘环100的机械硬度和热导率。此外,可减小边缘环100的热变形和化学损坏,可提供对污染物和颗粒的强抵抗力。此外,工艺气体可被引入到边缘环100的凹槽部件114中,且经加热以确保与大气环境匹配的工艺气体流动。因此,可最小化衬底10的温度偏差,且可最小化由于大气环境的匹配而导致的热损失。
如上文所描述,可诱导工艺气体的流动通过凹槽部件,使得在凹槽部件中加热工艺气体以流动到衬底,从而防止衬底的边缘区的温度因工艺气体而相对降低,从而最小化衬底的中心区与边缘区之间的温度偏差,且改善衬底的温度均匀性。因此,可防止衬底的扭曲和/或翘曲,以提高产品的良率。另外,如氧化膜的涂层可形成于边缘环上,以增加机械硬度和热导率,减小热变形和化学损坏,且对污染物和颗粒具有强抵抗力。此外,加热源可设置于凹槽部件上方,以有效地加热引入到凹槽部件中的工艺气体。
在以上描述中使用的术语“~在…上”包含在与上部和下部部分相对的位置处的直接接触和间接接触。也有可能不仅定位整个上部表面或整个下部表面,且还可定位部分上部表面或下部表面,且其用于在位置上与上部或下部表面相对或直接接触的意思。
根据示例性实施例的边缘环可诱导工艺气体的流动通过凹槽部件,使得在凹槽部件中加热工艺气体以流动到衬底,从而防止衬底的边缘区的温度被工艺气体相对降低,从而最小化衬底的中心区与边缘区之间的温度偏差,且改善衬底的温度均匀性。因此,可防止衬底的扭曲和/或翘曲,以提高产品的良率。
另外,如氧化膜的涂层可形成于边缘环上,以增加机械硬度和热导率,减小热变形和化学损坏,且对污染物和颗粒具有强抵抗力。
此外,根据示例性实施例的热处理设备可将加热源设置于凹槽部件的上方,以有效地加热引入到凹槽部件中的工艺气体。
虽然已经参看其若干示例实施例描述了实施例,但是这些实施例并不限于前述实施例,且因此,应理解,可由所属领域的技术人员设计将落入本发明的原理的精神和范围内的许多其它修改和实施例。因此,本发明的实际保护范围将通过所附权利要求的技术范围确定。
Claims (10)
1.一种边缘环,包括:
主体,具有环形形状,
其中所述主体包括:
衬底支撑部件,配置成支撑衬底的底部表面的边缘;
外带,设置于所述衬底支撑部件的外部,且具有一顶部表面,所述顶部表面高于所述衬底支撑部件的顶部表面且平行于由所述衬底支撑部件支撑的所述衬底的顶部表面;
外侧壁,设置于所述外带的外部;以及
凹槽部件,设置于所述衬底支撑部件与所述外带之间。
2.根据权利要求1所述的边缘环,其中所述凹槽部件包括:
底板,设置于比所述外带低的高度处;
内侧壁,从所述底板的顶部表面突出;以及
连接侧壁,配置成将所述外带连接到所述底板。
3.根据权利要求2所述的边缘环,其中所述连接侧壁具有配置成将所述外带的所述顶部表面连接到所述底板的所述顶部表面的内部表面,以及
所述内部表面至少部分地具有一区域,在所述区域中随着所述内部表面的高度降低,所述内部表面接近所述内侧壁。
4.根据权利要求2所述的边缘环,其中所述内侧壁的上部末端具有与由所述衬底支撑部件支撑的所述衬底的所述顶部表面相同的高度,或具有比所述衬底的所述顶部表面更高的高度。
5.根据权利要求2所述的边缘环,其中所述底板设置于一高度处,所述高度小于由所述衬底支撑部件支撑的所述衬底的所述顶部表面的高度。
6.根据权利要求1所述的边缘环,还包括由构成所述主体的元素中的任一种的氧化物制成且涂布于所述主体的至少一部分上的涂层。
7.根据权利要求6所述的边缘环,其中所述涂层具有在400纳米到1,500纳米范围内选择的厚度。
8.一种热处理设备,包括:
腔室,具有其中执行热处理工艺的内部空间;
如权利要求1到7中任一项所述的边缘环,所述边缘环设置于所述腔室的所述内部空间中;
加热源,安置于所述边缘环上方,以向由所述边缘环支撑的所述衬底提供热能;
气体供应部件,设置于所述腔室的一侧处,以供应工艺气体;以及
排气部件,设置于所述腔室的另一侧处以面向所述气体供应部件,从而排出所述腔室内的剩余气体。
9.根据权利要求8所述的热处理设备,其中所述加热源具有比所述衬底的面积更大的面积,且
所述加热源的至少一部分设置于所述边缘环的所述凹槽部件上方,以向所述凹槽部件提供热能。
10.根据权利要求8所述的热处理设备,还包括使所述边缘环旋转的旋转支撑部件,且
所述旋转支撑部件包括支撑环,所述边缘环支撑于所述支撑环上。
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