CN112501549A - 一种用于手机盖板的不导电真空电镀膜及其制备方法 - Google Patents
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Abstract
本发明公开一种用于手机盖板的不导电真空电镀膜及其制备方法，包括玻璃基板，玻璃基板顶面由下至上依次层叠有底漆层、下介质层、NCVM层、上介质层与面漆层；舍弃中涂或面涂涂料中添加色浆的传统方法，引入上、下介质层，上、下介质层均采用非氧化物材料，可以防止NCVM层被氧化和化学侵蚀，从而起到保护NCVM层的作用；通过调整上、下介质层的材料组成和膜厚，使反射光产生干涉的波长不同，并同NCVM层相结合，从而获得多种颜色的不导电真空电镀膜；由于不采用色浆，并且通过用等离子体对底漆层进行轰击，在底漆层表面沉积下介质层，能够保证膜系的结合力，防止出现掉漆现象。
Description
技术领域
本发明涉及功能薄膜技术领域，具体是一种用于手机盖板的不导电真空电镀膜及其制备方法。
背景技术
近年来，手机消费已成为人们物质生活不可缺少的一部份。市场上所出现的高光、高亮的金属外壳及表面金属电镀外观的产品普遍得到消费者的青睐。但是随着无线充电逐渐普及和5G时代等新型传输方式的到来，手机上将搭载更多种类的天线，尤其是5G时代通信采用频段更高的毫米波技术，天线设计也更加复杂，金属机壳难以应对手机天线设计问题。这主要是因为金属的导电性，通讯设备在收讯或发讯时，产生的电磁场被导电的金属所囤积，从而影响通讯设备的RF性能以及ESD性能。
基于此，不导电真空电镀技术（NCVM）被广泛应用于手机及多种电子产品的表面。NCVM 是采用镀膜金属及绝缘化合物等薄膜，利用各项不连续之特性，得到最终外观有金属质感且不影响无线通讯传输之效果，其主要工艺流程为基材—底漆喷涂base coating —NCVM—（中漆喷涂）middle coating—面漆喷涂Top coating。其中底漆、中漆与面漆一般采用UV涂料，而中漆层视具体情况决定是否采用，主要起着色或改善性能的作用。
由于UV涂层主要成分是有机物，易受氧气及水汽的侵蚀，导致不导电金属膜层的氧化，从而造成NCVM层与UV涂层的结合力下降等问题。同时，已有的NCVM工艺，大多都是用锡（Sn）靶或铟（In）靶作为NCVM工艺的主要靶材，其主要是利用Sn、In本身具有的低导电性的优势，但是其所呈现的金属光泽偏暖色系，金属光泽的颜色可选择性不多。
为解决NCVM工艺得到的手机盖板颜色单调的问题，目前主流的彩色盖板制作途径是在中涂或面涂UV涂料中添加色浆。但加色浆后，涂层附着力会变差，因色浆会与UV紫外光起作用，色浆浓度越高，UV涂料对UV能量吸收越差，深层固化也较差，所以容易出现彩色中漆或面漆层和底漆层之间掉漆的现象。
发明内容
本发明的目的在于提供一种用于手机盖板的不导电真空电镀膜及其制备方法，该电镀膜能够实现多种颜色的外观，并且膜系结合力强，抗氧化，防止出现掉漆现象，且制备方法简单，易于实现。
本发明解决其技术问题所采用的技术方案是：
一种用于手机盖板的不导电真空电镀膜，包括玻璃基板，玻璃基板顶面由下至上依次层叠有底漆层、下介质层、NCVM层、上介质层与面漆层；
所述下介质层单晶硅层或氮化物层；所述上介质层为氮化物层。
进一步的，所述下介质层与上介质层的氮化物采用氮化碳、氮化硅、氮化钛或氮化铝。
进一步的，所述NCVM层采用铟、锡、锌、钛、锆或是以上金属的合金。
本发明还提供一种用于手机盖板的不导电真空电镀膜的制备方法，包括以下步骤：
S1、清洗玻璃基板，去除玻璃基板表面的污垢；
S2、在玻璃基板顶面喷涂底漆层；
S3、采用等离子体对底漆层进行轰击，然后通过磁控溅射工艺在底漆层表面沉积下介质层，下介质层为单晶硅层或氮化物层；
S4、采用等离子体对下介质层进行轰击，然后通过NCVM工艺在下介质层表面镀制NCVM层；
S5、采用磁控溅射工艺在NCVM层表面沉积上介质层，上介质层为氮化物层；
S6、在上介质层表面喷涂面漆层，得到上述方案的不导电真空电镀膜。
进一步的，步骤S3与S5下介质层与上介质层的氮化物采用氮化碳、氮化硅、氮化钛或氮化铝。
进一步的，步骤S4的NCVM层采用铟、锡、锌、钛、锆或是以上金属的合金。
本发明的有益效果是，舍弃中涂或面涂涂料中添加色浆的传统方法，引入上、下介质层，上、下介质层均采用非氧化物材料，可以防止NCVM层被氧化和化学侵蚀，从而起到保护NCVM层的作用；通过调整上、下介质层的材料组成和膜厚，使反射光产生干涉的波长不同，并同NCVM层相结合，从而获得多种颜色的不导电真空电镀膜；由于不采用色浆，并且通过用等离子体对底漆层进行轰击，在底漆层表面沉积下介质层，改善了膜层的平整度和表面张力，从而在镀制NCVM层时，增加了不导电金属层与其它膜层的结合，保证了NCVM层的附着力，防止出现掉漆现象。
附图说明
下面结合附图和实施例对本发明进一步说明：
图1是本发明的结构示意图。
具体实施方式
如图1所示，本发明提供一种用于手机盖板的不导电真空电镀膜，包括玻璃基板1，玻璃基板1顶面由下至上依次层叠有底漆层2、下介质层3、NCVM层4、上介质层5与面漆层6；下介质层3为单晶硅层或氮化物层；上介质层5为氮化物层。
作为优选的，下介质层与上介质层的氮化物采用氮化碳、氮化硅、氮化钛或氮化铝。所述NCVM层4采用铟、锡、锌、钛、锆或是以上金属的合金。
本发明还提供一种用于手机盖板的不导电真空电镀膜的制备方法，包括以下步骤：
S1、清洗玻璃基板，去除玻璃基板表面的污垢；
S2、在玻璃基板顶面喷涂底漆层；
S3、采用等离子体对底漆层进行轰击，然后通过磁控溅射工艺在底漆层表面沉积下介质层，下介质层为单晶硅层或氮化物层；下介质层的氮化物采用氮化碳、氮化硅、氮化钛或氮化铝。
S4、采用等离子体对下介质层进行轰击，然后通过NCVM工艺在下介质层表面镀制NCVM层；NCVM层采用铟、锡、锌、钛、锆或是以上金属的合金；
S5、采用磁控溅射工艺在NCVM层表面沉积上介质层，上介质层为氮化物层；上介质层的氮化物采用氮化碳、氮化硅、氮化钛或氮化铝；
S6、在上介质层表面喷涂面漆层，得到上述方案的不导电真空电镀膜。
舍弃中涂或面涂涂料中添加色浆的传统方法，引入上、下介质层，上、下介质层均采用非氧化物材料，可以防止NCVM层被氧化和化学侵蚀，从而起到保护NCVM层的作用；通过调整上、下介质层的材料组成和膜厚，使反射光产生干涉的波长不同，并同NCVM层相结合，从而获得多种颜色的不导电真空电镀膜；由于不采用色浆，并且通过用等离子体对底漆层进行轰击，在底漆层表面沉积下介质层，改善了膜层的平整度和表面张力，从而在镀制NCVM层时，增加了不导电金属层与其它膜层的结合，保证了NCVM层的附着力，防止出现掉漆现象。
以上所述，仅是本发明的较佳实施例而已，并非对本发明作任何形式上的限制；任何熟悉本领域的技术人员，在不脱离本发明技术方案范围情况下，都可利用上述揭示的方法和技术内容对本发明技术方案做出许多可能的变动和修饰，或修改为等同变化的等效实施例。因此，凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所做的任何简单修改、等同替换、等效变化及修饰，均仍属于本发明技术方案保护的范围内。
Claims (6)
1.一种用于手机盖板的不导电真空电镀膜，其特征在于，包括玻璃基板，玻璃基板顶面由下至上依次层叠有底漆层、下介质层、NCVM层、上介质层与面漆层；
所述下介质层为单晶硅层或氮化物层；所述上介质层为氮化物层。
2.根据权利要求1所述的一种用于手机盖板的不导电真空电镀膜，其特征在于，所述下介质层与上介质层的氮化物采用氮化碳、氮化硅、氮化钛或氮化铝。
3.根据权利要求1所述的一种用于手机盖板的不导电真空电镀膜，其特征在于，所述NCVM层采用铟、锡、锌、钛、锆或是以上金属的合金。
4.一种用于手机盖板的不导电真空电镀膜的制备方法，其特征在于，包括以下步骤：
S1、清洗玻璃基板，去除玻璃基板表面的污垢；
S2、在玻璃基板顶面喷涂底漆层；
S3、采用等离子体对底漆层进行轰击，然后通过磁控溅射工艺在底漆层表面沉积下介质层，下介质层为单晶硅层或氮化物层；
S4、采用等离子体对下介质层进行轰击，然后通过NCVM工艺在下介质层表面镀制NCVM层；
S5、采用磁控溅射工艺在NCVM层表面沉积上介质层，上介质层为氮化物层；
S6、在上介质层表面喷涂面漆层，得到权利要求1所述的不导电真空电镀膜。
5.根据权利要求4所述的一种用于手机盖板的不导电真空电镀膜的制备方法，其特征在于，步骤S3与S5下介质层与上介质层的氮化物采用氮化碳、氮化硅、氮化钛或氮化铝。
6.根据权利要求4所述的一种用于手机盖板的不导电真空电镀膜的制备方法，其特征在于，步骤S4的NCVM层采用铟、锡、锌、钛、锆或是以上金属的合金。
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101942636A (zh) * | 2009-07-06 | 2011-01-12 | 亚汉科技股份有限公司 | 多层复合镀膜、其制造方法以及具有该多层复合镀膜的基材 |
| CN102076185A (zh) * | 2009-11-20 | 2011-05-25 | 深圳富泰宏精密工业有限公司 | 壳体的制作方法及由该方法制得的壳体 |
| US20160068945A1 (en) * | 2014-09-10 | 2016-03-10 | Hitec (Tong Xiang) Glass & Mirror Co., Ltd. | Method for beautifying surface of reinforced glass |
| CN108686911A (zh) * | 2018-04-16 | 2018-10-23 | 维沃移动通信有限公司 | 壳体的表面处理方法、壳体 |
| CN214736041U (zh) * | 2020-12-09 | 2021-11-16 | 中建材蚌埠玻璃工业设计研究院有限公司 | 一种用于手机盖板的不导电真空电镀膜 |
-
2020
- 2020-12-09 CN CN202011427676.0A patent/CN112501549A/zh active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101942636A (zh) * | 2009-07-06 | 2011-01-12 | 亚汉科技股份有限公司 | 多层复合镀膜、其制造方法以及具有该多层复合镀膜的基材 |
| CN102076185A (zh) * | 2009-11-20 | 2011-05-25 | 深圳富泰宏精密工业有限公司 | 壳体的制作方法及由该方法制得的壳体 |
| US20160068945A1 (en) * | 2014-09-10 | 2016-03-10 | Hitec (Tong Xiang) Glass & Mirror Co., Ltd. | Method for beautifying surface of reinforced glass |
| CN108686911A (zh) * | 2018-04-16 | 2018-10-23 | 维沃移动通信有限公司 | 壳体的表面处理方法、壳体 |
| CN214736041U (zh) * | 2020-12-09 | 2021-11-16 | 中建材蚌埠玻璃工业设计研究院有限公司 | 一种用于手机盖板的不导电真空电镀膜 |
Non-Patent Citations (1)
| Title |
|---|
| 郭睿倩 主编: "《光源原理与设计（第三版）》", 复旦大学出版社, pages: 396 * |
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