CN112447509B - Transparent flexible Micro-LED display system and preparation method thereof - Google Patents
Transparent flexible Micro-LED display system and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
Abstract
The invention discloses a transparent flexible Micro-LED display system, which adopts upright graphene as an interconnection electrode. According to the invention, the upright graphene is used as the interconnection electrode, so that the stability and reliability of the interconnection electrode under the action of stress are improved. Meanwhile, the vertical structure can fully utilize the abundant electron transmission channels and heat dissipation channels on the surface of the graphene, so that the longitudinal conductivity is improved, and the working voltage of the device is reduced. Meanwhile, the invention also discloses a preparation method of the transparent flexible Micro-LED display system.
Description
Technical Field
The invention relates to a transparent flexible Micro-LED display system and a preparation method thereof.
Background
The Micro-LED is a GaN and GaAs third-generation semiconductor light-emitting device with extremely high stability, the material is fragile, and the transparent flexibility of the Micro-LED is one of the difficulties of the application of the Micro-LED in the display field. The transparent flexible conductive material plays an important role in transparent flexibility of the Micro-LED array, and a metal film with an anti-strain pattern is generally adopted, so that the anti-strain capacity of the Micro-LED array is improved. However, the application of the graphene is limited to a certain extent by the non-light transmittance and weak stretch resistance of the metal, and the graphene has excellent mechanical, thermal and electrical properties and extremely high visible light transmittance, has attractive development potential in transparent flexible display, and attracts attention of vast researchers.
Graphene has wide application in LED or Micro-LED transparent conducting electrodes and flexible drives. For example, by thermal CVD, plane graphene is grown on copper foil, and is transferred to a device by a wet transfer technology to serve as a p-GaN layer transparent electrode, so that the light output power is improved; passively driven interconnect electrodes; or an active layer of an active drive transistor TFT. However, there are also a number of problems with graphene application to Micro-LED transparent flexible displays, such as: the graphene has overlarge sheet resistance and overlarge contact resistance with devices, and the large-scale preparation process is still immature.
First, since graphene used for transparent flexible conductive electrodes is generally prepared by a low-cost and highly controllable thermal CVD method, the growth temperature is generally above 1000 ℃. In order to avoid the influence of high temperature on the performance of the device, the planar graphene grown on the Cu foil or the Ni foil is generally transferred to the device by a wet transfer technology, and then a specific pattern is formed by combining micro-nano processing. The process not only involves high-temperature growth at the temperature of more than 1000 ℃, but also involves complex and time-consuming wet transfer and patterning processing, has the problems of wrinkling, breakage, adhesive residue and the like of the graphene, and is not beneficial to large-scale production. Secondly, the problems of overlarge contact resistance between graphene and a Micro-LED device, overlarge sheet resistance of the graphene and the Micro-LED device and the like are also important reasons for increasing the working voltage of the device and limiting the industrialization process. In addition, the interconnect electrode material of planar structure is also detrimental to electrical stability and reliability under stress.
Disclosure of Invention
Based on this, it is an object of the present invention to overcome the above-mentioned deficiencies of the prior art and to provide a transparent flexible Micro-LED display system.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows: a transparent flexible Micro-LED display system adopts upright graphene as an interconnection electrode.
Meanwhile, the invention also provides a preparation method of the transparent flexible Micro-LED display system, which comprises the following steps: and (3) carrying out in-situ localized growth of the vertical graphene interconnection electrode on the Micro-LED array by adopting an ICPCVD method, and carrying out localized growth of the vertical graphene by adopting a metal grid inducer to control the spatial distribution of a reaction carbon source and plasma intensity.
According to the method, the vertical graphene is used as the interconnection electrode, and stability and reliability of the interconnection electrode under the action of stress are improved. Meanwhile, the vertical structure can fully utilize the abundant electron transmission channels and heat dissipation channels on the surface of the graphene, so that the longitudinal conductivity is improved, and the working voltage of the device is reduced.
Preferably, the preparation method of the transparent flexible Micro-LED display system comprises the following steps:
a. preparing a transparent flexible substrate;
b. transferring the Micro-LED device to a transparent flexible substrate, wherein the size of the Micro-LED device is smaller than 100 mu m; the structure can be a lateral structure or a vertical structure;
c. spin-coating a dielectric layer on a Micro-LED device and forming holes; for planarizing and protecting the sidewalls;
d. processing Mo shadow mask corresponding to the interconnection electrode pattern; can be connected in parallel or in series;
e. aligning and fixing the Mo shadow mask corresponding to the interconnection electrode pattern with the Micro-LED array coated with the dielectric layer in a spin-on mode, then placing the Micro-LED array in an ICPCVD (integrated plasma chemical vapor deposition) growth furnace, and carrying out localized growth of the Micro-LED vertical graphene interconnection electrode according to the technological parameters of ICPCVD graphene growth;
f. packaging the Micro-LED display array, and spin-coating or spraying a protective layer such as PDMS;
g. and connecting the driving module with the vertical graphene interconnection electrode to obtain the transparent flexible Micro-LED display system.
The preparation method is mainly characterized in that: 1) The mode of in-situ growth enables graphene to be in contact with the interface of the device through chemical bonds, which is beneficial to forming a good electron transmission channel and reducing contact resistance; 2) The ICPCVD grown upright graphene is usually a few-layer graphene, and multiple layers of graphene are obtained without repeated wet transfer to reduce the sheet resistance; 3) The Mo metal grid inducer is grown without a precise photoetching process, so that the transparent flexible interconnection of Micro-LEDs is realized; 4) The vertical structure can fully utilize the abundant electron transmission channels and heat dissipation channels on the surface of the graphene, so that the longitudinal conductivity is improved, and the working voltage of the device is reduced; 5) Compared with graphene interconnection of a planar structure, the vertical structure is more beneficial to electrical stability and reliability of the Micro-LED in a tensile state (the planar structure is easy to fail in a conductive path under the action of stress).
More preferably, in the step c, the step of localized growth of the Micro-LED upstanding graphene interconnection electrode is as follows:
(1) Preparation of a growth environment: placing a Micro-LED array with a Mo shadow mask fixed on a sample stage of an ICPCVD reaction cavity by adopting inductively coupled plasma enhanced chemical vapor deposition equipment, and pumping the equipment air pressure to below 0.05 Torr; simultaneously, the temperature of the substrate is raised to 300-900 ℃ in the vacuumizing process;
(2) Pretreatment of a substrate: after the treatment in the step (1), H is introduced 2 And Ar gas, the air pressure is maintained at 0.03-0.05 Torr, the radio frequency power is slowly increased from 300W to 900W, then the substrate voltage is increased to 100V, and plasma is generated, and the process lasts for 12-18 min; the method can well remove pollutants on the surface of the substrate and raise the temperature of the substrate to enhance the reactivity;
(3) VFLG growth: after the pretreatment of the substrate in the step (2) is completed, cutting off the voltage, the radio frequency power and the H in sequence 2 And Ar gas, then introducing CH 4 And H 2 Mixing gas, maintaining the gas pressure at 0.45-0.55 Torr, increasing the radio frequency power from 300W to 1100W, and increasing the substrate voltage to 150V to ionize H 2 、CH 4 Generating plasma by gas, wherein the process lasts for 8-12 min;
(4) After the step (3) is finished, cutting off voltage, radio frequency power and gas H in sequence 2 And CH (CH) 4 And a substrate heating power supply, wherein the temperature is reduced to below 100 ℃ in vacuum, a sample is taken out, and the Mo metal grid is removed, so that the Micro-LED transparent flexible array with the vertical graphene interconnection is obtained.
Based on the ICPCVD method, the vertical graphene interconnection electrode is directly grown on the Micro-LED array in a localized manner, compared with the planar graphene grown by the thermal CVD method for the Micro-LED interconnection electrode, the method can avoid the problems of complex wet transfer process of graphene and performance reduction of the Micro-LED caused by excessively high growth temperature in the growth process of the graphene, and has at least the following advantages: 1. the stability and the reliability of the interconnection electrode in a bending/stretching state are facilitated; 2. the graphene material has abundant conductive channels and heat dissipation channels on the surface of the upright graphene, and is beneficial to reducing sheet resistance; 3. the graphene grows epitaxially from the surface of the device and contacts with the device in a chemical bond mode, so that a good electron transmission channel is formed, and the contact resistance is reduced; 4. according to the invention, a Mo net auxiliary metal inducer method is adopted, so that the distribution of the electric field intensity of the plasma and the supply amount of the carbon source are changed, the nucleation of the upright graphene in the non-interconnected region is inhibited, the transparent flexible interconnection electrode is directly formed on the Micro-LED array, the problems of complex process of the photoetching technology and metal light-tightness can be avoided, and the in-situ growth on the Micro-LED array is more controllable.
More preferably, in the step (2), H 2 And Ar gas is introduced in a volume ratio of 1:1.
More preferably, in the step (2), H 2 And Ar gas were introduced in an amount of 15sccm.
Preferably, in the step (3), CH 4 And H 2 The gas was introduced in a volume ratio of 6:1.
More preferably, in the step (3), CH 4 The passage amount of (C) is 60sccm, H 2 The gas was introduced in an amount of 10sccm.
Preferably, the transparent flexible substrate comprises a substrate and an adhesive layer arranged on the substrate, and the substrate is at least one of PE, PP, PI, PET and natural mica sheets.
According to the method, the optimal growth parameters of the graphene can be better ensured, the conductive characteristic is better, and the grown graphene has higher crystallinity.
Preferably, in the step g, the driving module is a passive matrix module, and is placed at the periphery of the transparent flexible substrate and driven by CMOS or TFT;
alternatively, the driving module adopts an active matrix module; one electrode of the common N electrode or the common P electrode of the LED is connected together through an interconnection electrode; the other electrode is directly welded with the active matrix module, and the active matrix is a TFT.
Compared with the prior art, the invention has the beneficial effects that:
1) And the upright graphene is used as an interconnection electrode, so that the stability and reliability of the interconnection electrode under the action of stress are improved. Meanwhile, the vertical structure can fully utilize the abundant electron transmission channels and heat dissipation channels on the surface of the graphene, so that the longitudinal conductivity is improved, and the working voltage of the device is reduced.
2) And an in-situ growth method is adopted, so that the electronic transmission characteristic of an interface is improved, and the contact resistance is reduced.
3) And the Mo metal grid inducer is adopted to realize the in-situ localized growth of the vertical graphene in the Micro-LED array, and a fine photoetching process is not needed, so that the transparent flexible interconnection of the Micro-LEDs is realized.
Drawings
FIG. 1 is a graph of a detailed effect analysis of a transparent flexible Micro-LED display system of the present application;
FIG. 2 is a flow chart of a method of making a transparent flexible Micro-LED display system of the present invention.
Detailed Description
For a better description of the objects, technical solutions and advantages of the present invention, the present invention will be further described with reference to the accompanying drawings and specific embodiments.
An embodiment of the transparent flexible Micro-LED display system is shown in the accompanying figure 1 (original figure of the accompanying figure 1 is a color chart); the preparation method of the transparent flexible Micro-LED display system of the embodiment is shown in the attached figure 2, and specifically comprises the following steps:
a. preparing a transparent flexible substrate: the transparent flexible substrate comprises a substrate and an adhesive layer arranged on the substrate; (the substrate may be PE, PP, PI, PET, natural mica sheet);
b. transferring the Micro-LED device to a transparent flexible substrate, wherein the size of the Micro-LED device is smaller than 100 mu m; the structure can be a lateral structure or a vertical structure;
c. on a Micro-LED device, a dielectric layer is spin-coated and perforated for flattening and protecting the side wall;
d. processing Mo shadow mask corresponding to the interconnection electrode pattern;
e. aligning and fixing the Mo shadow mask corresponding to the interconnection electrode pattern with the Micro-LED array coated with the dielectric layer in a spin-on mode, then placing the Micro-LED array in an ICPCVD (integrated plasma chemical vapor deposition) growth furnace, and carrying out localized growth of the Micro-LED vertical graphene interconnection electrode according to the technological parameters of ICPCVD graphene growth;
(1) Preparation of a growth environment: placing a Micro-LED array with a Mo shadow mask fixed on a sample stage of an ICPCVD reaction cavity by adopting inductively coupled plasma enhanced chemical vapor deposition equipment, pumping the equipment air pressure to below 0.05Torr, and simultaneously raising the temperature of a substrate from a chamber to 300-900 ℃ in the vacuumizing process;
(2) Pretreatment of a substrate: after the temperature of the substrate and the vacuum degree of the cavity reach the requirements, H is introduced 2 And Ar gas of 15sccm each, and maintaining the gas pressure at about 0.04Torr, slowly raising the radio frequency power from 300W to 900W, and then increasing the substrate voltage to 100V to generate plasma; the process lasts for 12-18 min, and the main purpose is to remove pollutants on the surface of the substrate and raise the temperature of the substrate to enhance the reactivity;
(3) VFLG growth: after the pretreatment process is completed, the voltage, the radio frequency power and the gas H are cut off in turn 2 And Ar; then a certain proportion of CH is introduced 4 And H 2 The mixed gas, 60sccm and 10sccm respectively, was kept at a gas pressure of about 0.05Torr, and the RF power was increased from 300W to 1100W and the substrate voltage was increased to 150V to ionize H 2 、CH 4 Generating plasma by gas; the process lasts for 8-12 min and is used for the growth of the VFLG;
(4) And (3) cooling and sampling: after the step (3) is finished, the voltage, the radio frequency power and the gas H are cut off in sequence 2 And CH (CH) 4 A substrate heating power supply; and taking out the sample when the temperature is reduced to below 100 ℃ in vacuum, and removing the Mo metal grid to obtain the Micro-LED transparent flexible array with the upright graphene interconnection.
f. Packaging the Micro-LED display array, and spin-coating or spraying a protective layer such as PDMS;
g. connecting a driving module with the vertical graphene interconnection electrode to obtain a transparent flexible Micro-LED display system;
the driving module can be a passive matrix module, is arranged on the periphery of the transparent flexible substrate and is driven by CMOS or TFT. The driving module can adopt an active matrix module, the LEDs are N-pole or p-pole in total, the LEDs are interconnected together through interconnection electrodes, the other pole is directly welded with the active matrix module, and the active matrix is a TFT. The LED array can be driven by addressing wires separately, and is suitable for micro-LED arrays on a small scale.
As can be seen from fig. 1, the method is based on the ICPCVD method, and the vertical graphene interconnection electrode is directly grown on the Micro-LED array in a localized manner, compared with the planar graphene grown by the thermal CVD method, which is used for the Micro-LED interconnection electrode, the method can avoid the problems of complex wet transfer process of graphene and performance degradation of the Micro-LED caused by excessively high growth temperature in the growth process of the graphene; has at least the following advantages:
1. the stability and the reliability of the interconnection electrode in a bending/stretching state are facilitated;
2. the graphene material has abundant conductive channels and heat dissipation channels on the surface of the upright graphene, and is beneficial to reducing sheet resistance;
3. the graphene grows epitaxially from the surface of the device and contacts with the device in a chemical bond mode, so that a good electron transmission channel is formed, and the contact resistance is reduced.
4. According to the invention, a Mo net auxiliary metal inducer method is adopted, so that the distribution of the electric field intensity of the plasma and the supply amount of the carbon source are changed, the nucleation of the upright graphene in the non-interconnected region is inhibited, the transparent flexible interconnection electrode is directly formed on the Micro-LED array, the problems of complex process of the photoetching technology and metal light-tightness can be avoided, and the in-situ growth on the Micro-LED array is more controllable.
Finally, it should be noted that the above embodiments are only for illustrating the technical solution of the present invention and not for limiting the scope of the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the technical solution of the present invention may be modified or substituted equally without departing from the spirit and scope of the technical solution of the present invention.
Claims (7)
1. The preparation method of the transparent flexible Micro-LED display system is characterized in that the transparent flexible Micro-LED display system adopts upright graphene as an interconnection electrode, and comprises the following steps:
a. preparing a transparent flexible substrate;
b. transferring the Micro-LED device to a transparent flexible substrate, wherein the size of the Micro-LED device is smaller than 100 mu m;
c. spin-coating a dielectric layer on a Micro-LED device and forming holes;
d. processing molybdenum metal grids corresponding to the interconnection electrode patterns;
e. aligning and fixing a molybdenum metal grid corresponding to the interconnection electrode pattern with a Micro-LED array which is spin-coated with a dielectric layer, then placing the array in an ICPCVD (ion-plasma chemical vapor deposition) growth furnace, and carrying out localized growth of the Micro-LED vertical graphene interconnection electrode according to the technological parameters of ICPCVD growth of graphene;
f. packaging the Micro-LED display array, and spin-coating or spraying a protective layer;
g. connecting a driving module with the vertical graphene interconnection electrode to obtain a transparent flexible Micro-LED display system;
in the step c, the localized growth of the Micro-LED upright graphene interconnection electrode is as follows:
(1) Preparation of a growth environment: placing a Micro-LED array with a molybdenum metal grid fixed on a sample stage of an ICPCVD reaction cavity by adopting inductively coupled plasma enhanced chemical vapor deposition equipment, and pumping the equipment air pressure to below 0.05 Torr; simultaneously, the temperature of the substrate is raised to 300-900 ℃ in the vacuumizing process;
(2) Pretreatment of a substrate: after the treatment in the step (1), H is introduced 2 And Ar gas, the air pressure is maintained at 0.03-0.05 Torr, the radio frequency power is slowly increased from 300W to 900W, then the substrate voltage is increased to 100V, and plasma is generated, and the process lasts for 12-18 min;
(3) After the pretreatment of the substrate in the step (2) is completed, cutting off the voltage, the radio frequency power and the H in sequence 2 And Ar gas, then introducing CH 4 And H 2 Mixing gas, maintaining the gas pressure at 0.45-0.55 Torr, increasing the radio frequency power from 300W to 1100W, and increasing the substrate voltage to 150V to ionize H 2 、CH 4 Generating plasma by gas, wherein the process lasts for 8-12 min;
(4) After the step (3) is finished, cutting off voltage, radio frequency power and gas H in sequence 2 And CH (CH) 4 And a substrate heating power supply, wherein the temperature is reduced to below 100 ℃ in vacuum, a sample is taken out, and a molybdenum metal grid is removed, so that the Micro-LED transparent flexible array with vertical graphene interconnection is obtained.
2. The method for manufacturing a transparent flexible Micro-LED display system according to claim 1, wherein in the step (2), H 2 And Ar gas is introduced in a volume ratio of 1:1.
3. The method for manufacturing a transparent flexible Micro-LED display system according to claim 2, wherein in the step (2), H 2 And Ar gas were introduced in an amount of 15sccm.
4. The method for manufacturing a transparent flexible Micro-LED display system according to claim 1, wherein in the step (3), CH 4 And H 2 The gas was introduced in a volume ratio of 6:1.
5. The method of claim 4, wherein in step (3), CH 4 The passage amount of (C) is 60sccm, H 2 The gas was introduced in an amount of 10sccm.
6. The method for manufacturing a transparent flexible Micro-LED display system according to claim 1, wherein the transparent flexible substrate comprises a substrate and an adhesive layer provided on the substrate, and the substrate is at least one of PE, PP, PI, PET and natural mica.
7. The method for manufacturing a transparent flexible Micro-LED display system according to claim 1, wherein in the step g, the driving module is a passive matrix module, and is placed at the periphery of the transparent flexible substrate and driven by CMOS or TFT;
alternatively, the driving module adopts an active matrix module; one electrode of the common N electrode or the common P electrode of the LED is connected together through an interconnection electrode; the other electrode is directly welded with the active matrix module, and the active matrix is a TFT.
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| WO2015077629A1 (en) * | 2013-11-21 | 2015-05-28 | Atom Nanoelectronics, Inc. | Devices, structures, materials and methods for vertical light emitting transistors and light emitting displays |
| KR20190101019A (en) * | 2018-02-22 | 2019-08-30 | (주)아이에스엘 | Manufacturing method for metal mesh transparent electrode for touch screen |
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