CN112447509A - Transparent flexible Micro-LED display system and preparation method thereof - Google Patents
Transparent flexible Micro-LED display system and preparation method thereof Download PDFInfo
- Publication number
- CN112447509A CN112447509A CN202011350999.4A CN202011350999A CN112447509A CN 112447509 A CN112447509 A CN 112447509A CN 202011350999 A CN202011350999 A CN 202011350999A CN 112447509 A CN112447509 A CN 112447509A
- Authority
- CN
- China
- Prior art keywords
- micro
- transparent flexible
- led
- display system
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 38
- 239000007789 gas Substances 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000010410 layer Substances 0.000 claims description 12
- 239000011159 matrix material Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 238000011065 in-situ storage Methods 0.000 claims description 7
- 239000000411 inducer Substances 0.000 claims description 6
- 238000005086 pumping Methods 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000010445 mica Substances 0.000 claims description 3
- 229910052618 mica group Inorganic materials 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- 238000009987 spinning Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000009616 inductively coupled plasma Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 abstract description 8
- 230000017525 heat dissipation Effects 0.000 abstract description 6
- 230000009471 action Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 2
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- -1 graphite alkene Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention discloses a transparent flexible Micro-LED display system, which adopts vertical graphene as an interconnection electrode. According to the invention, the vertical graphene is used as the interconnected electrode, so that the stability and reliability of the interconnected electrode under the stress action are improved. Meanwhile, the upright structure can make full use of rich electron transmission channels and heat dissipation channels on the surface of the graphene, so that the longitudinal conductivity is improved, and the working voltage of the device is reduced. Meanwhile, the invention also discloses a preparation method of the transparent flexible Micro-LED display system.
Description
Technical Field
The invention relates to a transparent flexible Micro-LED display system and a preparation method thereof.
Background
The Micro-LED is based on a GaN and GaAs third-generation semiconductor light-emitting device with extremely strong stability, the material is easy to be brittle, and the transparent flexibility of the Micro-LED is one of the difficulties in the application of the Micro-LED to the display field. The transparent flexible conductive material plays an important role in the transparent flexibility of the Micro-LED array, and a metal thin film with a strain-resistant pattern is usually adopted to improve the strain resistance of the Micro-LED array. However, the application of metal is limited to a certain extent by the opacity and weak tensile resistance of the metal, and graphene has excellent mechanical, thermal and electrical properties and extremely high visible light transmittance, has attractive development potential in transparent flexible display, and attracts attention of researchers.
The graphene has wide application in LED or Micro-LED transparent conductive electrodes and flexible drives. For example, planar graphene grows on a copper foil through thermal CVD, and is transferred to a device as a p-GaN layer transparent electrode through a wet transfer technology, so that the light output power is improved; a passively driven interconnect electrode; or the active layer of the active drive transistor TFT. However, the application of graphene to Micro-LED transparent flexible displays has many problems, such as: the sheet resistance of the graphene is too large, the contact resistance with a device is too large, and the large-scale preparation process is not mature.
Firstly, the graphene used for the transparent flexible conductive electrode is usually prepared by a thermal CVD method with low cost and strong controllability, and the growth temperature is usually over 1000 ℃. In order to avoid the influence of high temperature on the performance of the device, the planar graphene grown on the Cu foil or the Ni foil is generally transferred to the device by a wet transfer technique, and then a specific pattern is formed by combining micro-nano processing. The process not only involves high-temperature growth above 1000 ℃, but also involves complex and time-consuming wet transfer and patterning processing, has the problems of graphene wrinkling, breakage, adhesive residue and the like, and is not beneficial to large-scale production. Secondly, the problems of overlarge contact resistance between graphene and a Micro-LED device, overlarge sheet resistance of graphene and the like are also important reasons for increasing the working voltage of the device and limiting the industrialization process. In addition, the interconnection electrode material with the planar structure is not favorable for electrical stability and reliability under the action of stress.
Disclosure of Invention
Based on this, it is an object of the present invention to overcome the above-mentioned drawbacks of the prior art and to provide a transparent flexible Micro-LED display system.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows: a transparent flexible Micro-LED display system adopts vertical graphene as an interconnection electrode.
Meanwhile, the invention also provides a preparation method of the transparent flexible Micro-LED display system, which comprises the following steps: the vertical graphene interconnection electrode is grown on the Micro-LED array in a localized mode in situ by an ICPCVD method, and the vertical graphene is grown in a localized mode by controlling the spatial distribution of a reaction carbon source and the plasma intensity by a metal grid inducer.
This application adopts upright graphite alkene as interconnected electrode, improves stability and reliability under the interconnected electrode stress. Meanwhile, the upright structure can make full use of rich electron transmission channels and heat dissipation channels on the surface of the graphene, so that the longitudinal conductivity is improved, and the working voltage of the device is reduced.
Preferably, the preparation method of the transparent flexible Micro-LED display system comprises the following steps:
a. preparing a transparent flexible substrate;
b. transferring the Micro-LED device to a transparent flexible substrate, wherein the size of the Micro-LED device is less than 100 microns; the structure can be a lateral structure or a vertical structure;
c. spin-coating a dielectric layer on the Micro-LED device and forming holes; the device is used for flattening and protecting the side wall;
d. processing a Mo shadow mask corresponding to the interconnected electrode pattern; can be connected in parallel and in series;
e. aligning and fixing the Mo shadow mask corresponding to the interconnection electrode pattern with the Micro-LED array coated with the dielectric layer in a spinning mode, then placing the Micro-LED array in an ICPCVD growth furnace, and carrying out localized growth of the Micro-LED vertical graphene interconnection electrode according to the process parameters of growing graphene in the ICPCVD;
f. encapsulating, spin coating or spray coating a Micro-LED display array with a protective layer, such as PDMS;
g. and connecting the driving module with the vertical graphene interconnection electrode to obtain the transparent flexible Micro-LED display system.
The preparation method is mainly characterized in that: 1) the in-situ growth mode enables the graphene to be in contact with the device interface by chemical bonds, so that a good electron transmission channel is formed, and the contact resistance is reduced; 2) the vertical graphene grown by ICPCVD is usually few-layer graphene, and the sheet resistance is reduced by obtaining the multilayer graphene without repeated wet transfer; 3) the Mo metal grid inducer is grown by a method without a precise photoetching process, so that transparent flexible interconnection of the Micro-LEDs is realized; 4) the vertical structure can fully utilize rich electron transmission channels and heat dissipation channels on the surface of the graphene, so that the longitudinal conductivity is improved, and the working voltage of the device is reduced; 5) compared with graphene interconnection of a planar structure, the vertical structure is more favorable for electrical stability and reliability of the Micro-LED in a stretching state (a conductive path of the planar structure is easy to lose efficacy under the action of stress).
More preferably, in the step c, the step of localized growth of the Micro-LED vertical graphene interconnection electrode is as follows:
(1) preparation of growth environment: placing a Micro-LED array fixed by a Mo shadow mask on a sample table of an ICPCVD reaction cavity by adopting inductively coupled plasma enhanced chemical vapor deposition equipment, and pumping the air pressure of the equipment to be below 0.05 Torr; simultaneously, the temperature of the substrate is raised to 300-900 ℃ in the vacuum-pumping process;
(2) substrate pretreatment: after the treatment of the step (1), introducing H2And ArMaintaining the gas pressure at 0.03-0.05 Torr, slowly increasing the RF power from 300W to 900W, and then increasing the substrate voltage to 100V to generate plasma, wherein the process lasts for 12-18 min; can well remove the pollutants on the surface of the substrate and raise the temperature of the substrate to enhance the reaction activity;
(3) VFLG growth: after the pretreatment of the substrate in the step (2) is finished, sequentially cutting off the voltage, the radio frequency power and the H2And Ar gas, then CH is introduced4And H2Mixing the gases, maintaining the pressure at 0.45-0.55 Torr, and increasing the RF power from 300W to 1100W and the substrate voltage to 150V to ionize H2、CH4Generating plasma by the gas, wherein the process lasts for 8-12 min;
(4) after the step (3) is finished, sequentially cutting off the voltage, the radio frequency power and the gas H2And CH4And a substrate heating power supply, reducing the temperature to be below 100 ℃ in vacuum, taking out the sample, and removing the Mo metal grid to obtain the vertical graphene interconnected Micro-LED transparent flexible array.
The invention is based on an ICPCVD method, the vertical graphene interconnection electrode is directly grown on the Micro-LED array in a localized manner, compared with a method that planar graphene grown by a thermal CVD method is used for the Micro-LED interconnection electrode, the method can avoid the problems of complex wet transfer process of the graphene and performance reduction of the Micro-LED in the graphene growth process due to overhigh growth temperature, and at least has the following advantages: 1. the stability and the reliability of the interconnected electrodes in a bending/stretching state are facilitated; 2. the graphene has abundant conductive channels and heat dissipation channels on the surface of the vertical graphene, so that the sheet resistance is favorably reduced; 3. the graphene grows from the surface of the device in an epitaxial mode and is in contact with the device in a chemical bond mode, so that a good electron transmission channel is formed, and the contact resistance is reduced; 4. according to the invention, the Mo net is adopted to assist the metal inducer, so that the distribution of the electric field intensity of the plasma and the supply amount of the carbon source are changed, the nucleation of the upright graphene in the non-interconnection area is inhibited, the transparent flexible interconnection electrode is directly formed on the Micro-LED array, the problems of complex process of the photoetching technology and metal light-tight property can be avoided, and the in-situ growth on the Micro-LED array is more controllable.
More preferably, it isIn the above step (2), H2And Ar gas was introduced at a volume ratio of 1: 1.
More preferably, in the step (2), H2And Ar gas was introduced in an amount of 15 sccm.
Preferably, in the step (3), CH4And H2The gas was introduced at a volume ratio of 6: 1.
More preferably, in the step (3), CH4The introduction amount of (2) is 60sccm, H2The gas was introduced at a rate of 10 sccm.
Preferably, the transparent flexible substrate comprises a base material and an adhesion layer arranged on the base material, wherein the base material is at least one of PE, PP, PI, PET and natural mica sheets.
By the parameter selection, the optimal growth parameters of the graphene can be better guaranteed, the conductive property is better, and the crystallinity of the grown graphene is higher.
Preferably, in the step g, the driving module is a passive matrix module, is placed at the periphery of the transparent flexible substrate, and is driven by a CMOS or a TFT;
or the driving module adopts an active matrix module; the LED is connected with one electrode of the common N pole or the common P pole of the LED through an interconnection electrode; the other electrode is directly welded with an active matrix module, and the active matrix is a TFT.
Compared with the prior art, the invention has the beneficial effects that:
1) the vertical graphene is used as an interconnection electrode, so that the stability and reliability of the interconnection electrode under the stress action are improved. Meanwhile, the upright structure can make full use of rich electron transmission channels and heat dissipation channels on the surface of the graphene, so that the longitudinal conductivity is improved, and the working voltage of the device is reduced.
2) By adopting the in-situ growth method, the electron transmission characteristic of the interface is improved, and the contact resistance is reduced.
3) The Mo metal grid inducer is adopted to realize the in-situ localized growth of the vertical graphene in the Micro-LED array, a fine photoetching process is not needed, and the transparent flexible interconnection of the Micro-LEDs is realized.
Drawings
FIG. 1 is a detailed effect analysis diagram of the transparent flexible Micro-LED display system of the present application;
FIG. 2 is a flow chart of a method of making a transparent flexible Micro-LED display system of the present invention.
Detailed Description
To better illustrate the objects, aspects and advantages of the present invention, the present invention will be further described with reference to the accompanying drawings and specific embodiments.
In an embodiment of the transparent flexible Micro-LED display system, a specific effect analysis of the transparent flexible Micro-LED display system is shown in fig. 1 (the original drawing of fig. 1 is a color drawing); the preparation method of the transparent flexible Micro-LED display system of the embodiment is shown in fig. 2, and specifically comprises the following steps:
a. preparing a transparent flexible substrate: the transparent flexible substrate comprises a base material and an adhesion layer arranged on the base material; (the substrate can be PE, PP, PI, PET, natural mica sheet);
b. transferring the Micro-LED device to a transparent flexible substrate, wherein the size of the Micro-LED device is less than 100 microns; the structure can be a lateral structure or a vertical structure;
c. spin-coating a dielectric layer on the Micro-LED device, and forming holes for flattening and protecting the side wall;
d. processing a Mo shadow mask corresponding to the interconnected electrode pattern;
e. aligning and fixing the Mo shadow mask corresponding to the interconnection electrode pattern with the Micro-LED array coated with the dielectric layer in a spinning mode, then placing the Micro-LED array in an ICPCVD growth furnace, and carrying out localized growth of the Micro-LED vertical graphene interconnection electrode according to the process parameters of growing graphene in the ICPCVD;
(1) preparation of growth environment: placing a Micro-LED array fixed by a Mo shadow mask on a sample table of an ICPCVD reaction chamber by adopting inductive coupling plasma enhanced chemical vapor deposition equipment, pumping the air pressure of the equipment to be below 0.05Torr, and simultaneously raising the temperature of a substrate to be 300-900 ℃ from a room temperature in the vacuum pumping process;
(2) substrate pretreatment: when the substrate temperature and the cavity vacuum degree meet the requirements, H is introduced2And Ar gas of 15sccm each, and the gas pressure was maintained at 0.04Torr, slowly increasing the radio frequency power from 300W to 900W, and then adding the substrate voltage to 100V to generate plasma; the process lasts for 12-18 min, and the main purposes are to remove pollutants on the surface of the substrate and raise the temperature of the substrate to enhance the reaction activity;
(3) VFLG growth: after the pretreatment process is finished, the voltage, the radio frequency power and the gas H are cut off in sequence2And Ar; then introducing a certain proportion of CH4And H2The gas mixture was made to have a gas pressure of about 0.05Torr at 60sccm and 10sccm, respectively, and the RF power was applied from 300W to 1100W and the substrate voltage was applied to 150V to ionize H2、CH4Generating plasma by the gas; the process lasts for 8-12 min and is used for VFLG growth;
(4) cooling and sampling: after the step (3) is finished, sequentially cutting off the voltage, the radio frequency power and the gas H2And CH4A substrate heating power supply; and (3) taking out the sample when the temperature is reduced to be below 100 ℃ in vacuum, and removing the Mo metal grid to obtain the vertical graphene interconnected Micro-LED transparent flexible array.
f. Packaging the Micro-LED display array, and spin-coating or spray-coating a protective layer such as PDMS;
g. connecting the driving module with the vertical graphene interconnection electrode to obtain a transparent flexible Micro-LED display system;
the driving module can adopt a passive matrix module, is arranged at the periphery of the transparent flexible substrate and is driven by a CMOS or a TFT. The driving module can adopt an active matrix module, LEDs share an N pole or a p pole, the LEDs are interconnected together through interconnection electrodes, the other pole is directly welded with the active matrix module, and the active matrix is a TFT. And the LED array can also be driven by a single addressing lead, and is suitable for small-scale micro LED arrays.
As can be seen from the attached figure 1, the vertical graphene interconnection electrode is directly grown on the Micro-LED array in a localized manner based on an ICPCVD method, and compared with the method that planar graphene grown by a thermal CVD method is used for the Micro-LED interconnection electrode, the method can avoid the problems of complex wet transfer process of the graphene and performance reduction of the Micro-LED caused by overhigh growth temperature in the graphene growth process; has at least the following advantages:
1. the stability and the reliability of the interconnected electrodes in a bending/stretching state are facilitated;
2. the graphene has abundant conductive channels and heat dissipation channels on the surface of the vertical graphene, so that the sheet resistance is favorably reduced;
3. graphene grows from the surface of the device in an epitaxial mode and is in contact with the device in a chemical bond mode, so that a good electron transmission channel is formed, and contact resistance is reduced.
4. According to the invention, the Mo net is adopted to assist the metal inducer, so that the distribution of the electric field intensity of the plasma and the supply amount of the carbon source are changed, the nucleation of the upright graphene in the non-interconnection area is inhibited, the transparent flexible interconnection electrode is directly formed on the Micro-LED array, the problems of complex process of the photoetching technology and metal light-tight property can be avoided, and the in-situ growth on the Micro-LED array is more controllable.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the protection scope of the present invention, and although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (10)
1. A transparent flexible Micro-LED display system is characterized in that vertical graphene is used as an interconnection electrode.
2. A method of manufacturing a transparent flexible Micro-LED display system according to claim 1, wherein the method comprises: the vertical graphene interconnection electrode is grown on the Micro-LED array in a localized mode in situ by an ICPCVD method, and the vertical graphene is grown in a localized mode by controlling the spatial distribution of a reaction carbon source and the plasma intensity by a metal grid inducer.
3. A method of manufacturing a transparent flexible Micro-LED display system according to claim 2, comprising the steps of:
a. preparing a transparent flexible substrate;
b. transferring the Micro-LED device to a transparent flexible substrate, wherein the size of the Micro-LED device is less than 100 microns;
c. spin-coating a dielectric layer on the Micro-LED device and forming holes;
d. processing a Mo shadow mask corresponding to the interconnected electrode pattern;
e. aligning and fixing the Mo shadow mask corresponding to the interconnection electrode pattern with the Micro-LED array coated with the dielectric layer in a spinning mode, then placing the Micro-LED array in an ICPCVD growth furnace, and carrying out localized growth of the Micro-LED vertical graphene interconnection electrode according to the process parameters of growing graphene in the ICPCVD;
f. packaging the Micro-LED display array, and spin-coating or spray-coating a protective layer;
g. and connecting the driving module with the vertical graphene interconnection electrode to obtain the transparent flexible Micro-LED display system.
4. A method of manufacturing a transparent flexible Micro-LED display system according to claim 3, wherein in step c, the step of localized growth of the Micro-LED vertical graphene interconnect electrode is as follows:
(1) preparation of growth environment: placing a Micro-LED array fixed by a Mo shadow mask on a sample table of an ICPCVD reaction cavity by adopting inductively coupled plasma enhanced chemical vapor deposition equipment, and pumping the air pressure of the equipment to be below 0.05 Torr; simultaneously, the temperature of the substrate is raised to 300-900 ℃ in the vacuum-pumping process;
(2) substrate pretreatment: after the treatment of the step (1), introducing H2And Ar gas, the pressure is maintained at 0.03-0.05 Torr, the radio frequency power is slowly increased to 900W from 300W, the substrate voltage is increased to 100V, and plasma is generated, and the process lasts for 12-18 min;
(3) VFLG growth: after the pretreatment of the substrate in the step (2) is finished, sequentially cutting off the voltage, the radio frequency power and the H2And Ar gas, then CH is introduced4And H2Mixing the gases, maintaining the pressure at 0.45-0.55 Torr, and increasing the RF power from 300W to 1100W and the substrate voltage to 150V to ionize H2、CH4Generating plasma by the gas, wherein the process lasts for 8-12 min;
(4) after the step (3) is finished, sequentially cutting off the voltage, the radio frequency power and the gas H2And CH4And a substrate heating power supply, reducing the temperature to be below 100 ℃ in vacuum, taking out the sample, and removing the Mo metal grid to obtain the vertical graphene interconnected Micro-LED transparent flexible array.
5. The method of making a transparent flexible Micro-LED display system according to claim 4, wherein in step (2), H2And Ar gas was introduced at a volume ratio of 1: 1.
6. The method of making a transparent flexible Micro-LED display system according to claim 5, wherein in step (2), H2And Ar gas was introduced in an amount of 15 sccm.
7. The method of making a transparent flexible Micro-LED display system according to claim 4, wherein in step (3), CH4And H2The gas was introduced at a volume ratio of 6: 1.
8. The method of making a transparent flexible Micro-LED display system according to claim 7, wherein in step (3), CH4The introduction amount of (2) is 60sccm, H2The gas was introduced at a rate of 10 sccm.
9. The method of making a transparent flexible Micro-LED display system according to claim 3, wherein the transparent flexible substrate comprises a substrate and an adhesion layer disposed on the substrate, the substrate being at least one of PE, PP, PI, PET, natural mica flakes.
10. A method for manufacturing a transparent flexible Micro-LED display system according to claim 3, wherein in the step g, the driving module is a passive matrix module, is disposed at the periphery of the transparent flexible substrate, and is driven by CMOS or TFT;
or the driving module adopts an active matrix module; the LED is connected with one electrode of the common N pole or the common P pole of the LED through an interconnection electrode; the other electrode is directly welded with an active matrix module, and the active matrix is a TFT.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011350999.4A CN112447509B (en) | 2020-11-26 | 2020-11-26 | Transparent flexible Micro-LED display system and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011350999.4A CN112447509B (en) | 2020-11-26 | 2020-11-26 | Transparent flexible Micro-LED display system and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112447509A true CN112447509A (en) | 2021-03-05 |
| CN112447509B CN112447509B (en) | 2023-05-16 |
Family
ID=74738466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011350999.4A Active CN112447509B (en) | 2020-11-26 | 2020-11-26 | Transparent flexible Micro-LED display system and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112447509B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103236320A (en) * | 2013-03-22 | 2013-08-07 | 重庆绿色智能技术研究院 | Method for manufacturing metal grid-graphene transparent electrode and method for manufacturing touch screen from metal grid-graphene transparent electrode |
| CN103787325A (en) * | 2014-02-21 | 2014-05-14 | 中山大学 | Novel graphene material and preparation method of component made of novel graphene material |
| US20140362030A1 (en) * | 2013-06-06 | 2014-12-11 | Focaltech Systems, Ltd. | Capacitive touch screen and method for manufacturing the same |
| WO2015077629A1 (en) * | 2013-11-21 | 2015-05-28 | Atom Nanoelectronics, Inc. | Devices, structures, materials and methods for vertical light emitting transistors and light emitting displays |
| CN105006450A (en) * | 2015-08-31 | 2015-10-28 | 中国科学院半导体研究所 | Preparation method of extensive inorganic flexible LED array |
| US20160162086A1 (en) * | 2014-12-03 | 2016-06-09 | Boe Technology Group Co., Ltd. | Touch control electrode, touch screen, and display device |
| KR20190101019A (en) * | 2018-02-22 | 2019-08-30 | (주)아이에스엘 | Manufacturing method for metal mesh transparent electrode for touch screen |
-
2020
- 2020-11-26 CN CN202011350999.4A patent/CN112447509B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103236320A (en) * | 2013-03-22 | 2013-08-07 | 重庆绿色智能技术研究院 | Method for manufacturing metal grid-graphene transparent electrode and method for manufacturing touch screen from metal grid-graphene transparent electrode |
| US20140362030A1 (en) * | 2013-06-06 | 2014-12-11 | Focaltech Systems, Ltd. | Capacitive touch screen and method for manufacturing the same |
| WO2015077629A1 (en) * | 2013-11-21 | 2015-05-28 | Atom Nanoelectronics, Inc. | Devices, structures, materials and methods for vertical light emitting transistors and light emitting displays |
| CN103787325A (en) * | 2014-02-21 | 2014-05-14 | 中山大学 | Novel graphene material and preparation method of component made of novel graphene material |
| US20160162086A1 (en) * | 2014-12-03 | 2016-06-09 | Boe Technology Group Co., Ltd. | Touch control electrode, touch screen, and display device |
| CN105006450A (en) * | 2015-08-31 | 2015-10-28 | 中国科学院半导体研究所 | Preparation method of extensive inorganic flexible LED array |
| KR20190101019A (en) * | 2018-02-22 | 2019-08-30 | (주)아이에스엘 | Manufacturing method for metal mesh transparent electrode for touch screen |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112447509B (en) | 2023-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103194795B (en) | A kind of method of low-cost preparation of large-size monocrystal graphene | |
| CN104505445B (en) | A kind of LED chip production method of composite transparent conductive electrode | |
| CN102201503A (en) | III-nitride substrate growing method, substrate and LED (light emitting diode) | |
| CN102097548B (en) | Method for preparing self-supported GaN-based light emitting diode | |
| CN107293622B (en) | Epitaxial wafer of light emitting diode and preparation method thereof | |
| CN105024004A (en) | A high luminous efficiency chip of a vertical LED structure and with heat radiation characteristics and a manufacturing method thereof | |
| CN113957527A (en) | Preparation of two-dimensional Nano Cs3Cu2I5Method for producing crystalline material and use thereof | |
| CN104319320B (en) | A kind of LED chip with composite transparent electrode and preparation method thereof | |
| CN112447509A (en) | Transparent flexible Micro-LED display system and preparation method thereof | |
| CN102185049B (en) | Preparation method of ZnO-based light-emitting device | |
| CN110993752A (en) | LED epitaxial growth method taking graphene as buffer layer | |
| CN204118109U (en) | A kind of LED chip of NEW TYPE OF COMPOSITE transparency electrode | |
| CN105002555B (en) | A kind of growing method of TiO2 monocrystal nano piece | |
| CN108483483B (en) | Preparation method of ultrathin zinc oxide nanosheet electrode | |
| CN107731971B (en) | Vertical structure LED chip based on photonic crystal and preparation method thereof | |
| CN104752568B (en) | A kind of preparation method for the GaN base LED epitaxial structure improving crystal quality | |
| CN110429159B (en) | Color temperature adjustable fluorescent powder-free single-chip white light LED device and manufacturing method thereof | |
| CN101728184B (en) | Silicon-based filed emission cathode material with low threshold electric field and preparation method thereof | |
| CN109148593A (en) | A kind of ternary p-type CuBi2O4Thin film transistor (TFT) and preparation method thereof | |
| CN106868470A (en) | A kind of utilization technique for atomic layer deposition is by replacing the method that reaction prepares transparent Copper thin film conductive electrode | |
| CN107681028B (en) | ZnO-based LED chip with vertical structure and preparation method thereof | |
| WO2021073288A1 (en) | NANOWIRE-BASED μLED DISPLAY DESIGN METHOD | |
| CN204271122U (en) | A kind of LED chip of composite transparent conductive electrode | |
| CN110649133A (en) | All-inorganic perovskite LED light-emitting device based on InN electron transport layer | |
| CN110783472B (en) | LED containing PMOT PPV/ZnO Cu/ZnO Al heterojunction and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |