CN116404075A - Preparation method of light-emitting element and light-emitting element - Google Patents
Preparation method of light-emitting element and light-emitting element Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Abstract
The invention provides a preparation method of a light-emitting element, which relates to the technical field of semiconductors, and comprises the following steps: sequentially growing a buffer layer, an N-type semiconductor layer, a quantum well layer and a P-type semiconductor layer on a substrate; etching to penetrate through the P-type semiconductor layer and the quantum well layer so that the LED core particles are completely separated in the quantum well layer to form independent LED pixel core particles; depositing a current expansion layer on the P-type semiconductor layer; depositing a current blocking layer on the current spreading layer; and transferring the LED chip to a driving circuit substrate, and completing packaging. The technical scheme provided by the invention can cancel the processing steps of laser peeling the substrate, removing residual gallium metal, film packaging LED core particles, cover plate dispensing vacuum lamination in the subsequent module packaging and the like in the micro LED mass transfer technology, and greatly reduces the engineering implementation difficulty.
Description
Technical Field
The present invention relates to the field of semiconductor technologies, and in particular, to a method for manufacturing a light emitting device and a light emitting device.
Background
Micro-LED display is a novel array display technology composed of Micro-scale LEDs, and has the advantages of self-luminescence, high efficiency, low power consumption, flexibility, high transparency, integration, interaction, high stability and all-weather operation compared with the existing mainstream display technology (LCD, OLED and the like), and is considered to be a display technology with full functions and full application fields. But simultaneously, the problems of low yield, high cost and poor mass productivity are faced, and the challenges specifically face are presented in the aspects of consistent and efficiency reduction of the light emitting of the Micro-scale of the LED chip, high-speed mass transfer of the Micro-LED chip, bonding of the Micro-LED chip and a driving chip or a backboard, full-color display, high light extraction efficiency, high contrast, low-power consumption driving technology, detection and repair and splicing of a large-size display screen.
At present, an electric interconnection is realized after a Micro LED chip and a driving backboard are bonded, namely, huge transfer is realized, the driving backboard comprises a glass substrate LTPS/LTPO driving backboard or a silicon substrate CMOS driving backboard or a flexible PET/PI substrate driving backboard, and a dynamic picture can be lightened and displayed after the Micro LED chip and the driving backboard are powered.
However, the existing macro transfer processing sequence is generally that Micro LEDs and driving backboard are subjected to metal preparation, pixel isolation column preparation, flip-chip bonding, laser peeling of Micro LED substrates, residual gallium metal cleaning and film packaging, and then module packaging is carried out. The epitaxial layer is easy to damage when the high-energy laser irradiates, residual gallium ions are difficult to remove cleanly by laser bonding, and the epitaxial layer is easy to damage when the residual gallium ions are removed by a wet method.
Disclosure of Invention
The invention mainly aims to provide a preparation method of a light-emitting element and the light-emitting element, and aims to solve the technical problems that in the prior art, an epitaxial layer is easy to damage due to high-energy laser irradiation, residual gallium ions are difficult to remove cleanly due to laser bonding, and the epitaxial layer is easy to damage due to a wet method for removing the residual gallium ions.
In order to achieve the above object, the present invention provides a method for manufacturing a light emitting element, comprising the steps of:
sequentially growing a buffer layer, an N-type semiconductor layer, a quantum well layer and a P-type semiconductor layer on a substrate;
etching to penetrate through the P-type semiconductor layer and the quantum well layer so that each LED pixel core particle in the single LED chip is disconnected in the quantum well layer to form independent LED pixel core particles;
depositing a current expansion layer on the P-type semiconductor layer;
depositing a current blocking layer on the current spreading layer;
and transferring the LED chip to a driving circuit substrate, and completing packaging.
Optionally, transferring the LED chip onto the driving circuit substrate and completing the packaging includes the steps of:
plating the P-type electrode, the N-type electrode and the LED bond metal by adopting a vacuum evaporation method;
the side wall protection is carried out on the N-type semiconductor layer, the quantum well layer, the P-type semiconductor layer, the current expansion layer and the P-type electrode;
filling a black matrix layer in the gaps of the LED pixel core particles by adopting a photoetching method;
the driving backboard adopts a vacuum evaporation plating method to plate a bonding metal In or InSn or AuSn column of the driving backboard;
manufacturing a drive backboard bonding intermetallic insulating isolation column by adopting a photoetching method
And adopting a flip-chip bonding cold pressure welding technology to weld the LED chip and the driving backboard.
Optionally, the step of performing sidewall protection on the N-type semiconductor layer, the quantum well layer, the P-type semiconductor layer, the current spreading layer and the P-type electrode includes:
deposition of Al using PEALD atomic layer 2 O 3 A thin film encapsulation layer;
etching Al using inductively coupled plasma 2 O 3 The LED bond metal is exposed.
Optionally, the step of depositing a current spreading layer on the P-type semiconductor layer includes:
depositing an ITO layer on the surface of the P-type semiconductor layer by adopting a magnetron sputtering process;
controlling the deposition thickness of the ITO layer to be
To form a P-type ohmic contact after annealing.
Optionally, the step of depositing a current blocking layer on the current spreading layer comprises:
deposition of SiO on the current spreading layer at 200-400 ℃ using plasma enhanced vapor deposition 2 And (5) coating.
In addition, in order to achieve the above object, the present invention also provides a light emitting element, including a substrate, an N-type semiconductor layer, a quantum well layer, a P-type semiconductor layer, a current spreading layer, a current blocking layer, a thin film encapsulation layer, an LED bonding metal, a P-type electrode, an N-type electrode, a black matrix layer, a driving back plate bonding metal, a driving back plate pixel electrode, a driving back plate common electrode, an insulating isolation column, and a driving back plate bonding pad;
each LED chip is connected with the driving backboard through the LED bonding metal in a bonding metal mode.
Optionally, each LED chip is connected to the pixel electrode of the driving back plate through the P-type semiconductor layer, and each LED is connected to the common electrode of the driving back plate through the N-type semiconductor layer, so as to form a loop.
Optionally, each LED chip shares the N-type semiconductor layer and is connected with the LED bond metal through the N-type electrode.
Optionally, each LED chip is connected with the LED bond metal through the P-type electrode by using the P-type semiconductor layer alone.
According to the technical scheme provided by the invention, aiming at complex processing technology and processing difficulty after massive transfer, the Micro LED structure and the preparation method thereof are provided, so that processing steps such as laser peeling of a substrate, removal of residual gallium metal, film packaging of LED core particles, cover plate dispensing vacuum lamination in subsequent module packaging and the like can be omitted, and the engineering implementation difficulty is greatly reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a light emitting device according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart of a method for manufacturing a light-emitting device according to an embodiment of the present invention;
FIG. 3 is a schematic flow chart of a method for manufacturing a light-emitting device according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a quantum well layer of a light emitting device according to the present invention;
fig. 5 is a top view of a light emitting device according to the present invention.
Reference numerals illustrate:
| reference numerals | Name of the name | Reference numerals | Name of the |
| 100 | Light-emitting element | 111 | P- |
| 101 | Substrate and method for manufacturing the same | 112 | |
| 102 | |
113 | Black matrix layer |
| 103 | N-type semiconductor layer | 114 | N- |
| 104 | LED bonding metal | 115 | P- |
| 105 | Driving |
116 | |
| 106 | |
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| 107 | Drive back |
||
| 108 | Driving backboard |
||
| 109 | Driving |
||
| 110 | Current blocking layer |
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
The present invention will be further described in detail below with reference to specific embodiments and with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the present invention more apparent. A clear and complete description of the technical solutions of the present invention is provided, it being apparent that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. It should be understood that the description is only illustrative and is not intended to limit the scope of the invention. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the invention. It may be evident, however, that one or more embodiments may be practiced without these specific details. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the present invention.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The terms "comprises," "comprising," and/or the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It should be noted that the terms used herein should be construed to have meanings consistent with the context of the present specification and should not be construed in an idealized or overly formal manner.
Where expressions like at least one of "A, B and C, etc. are used, the expressions should generally be interpreted in accordance with the meaning as commonly understood by those skilled in the art (e.g.," a system having at least one of A, B and C "shall include, but not be limited to, a system having a alone, B alone, C alone, a and B together, a and C together, B and C together, and/or A, B, C together, etc.). Where a formulation similar to at least one of "A, B or C, etc." is used, in general such a formulation should be interpreted in accordance with the ordinary understanding of one skilled in the art (e.g. "a system with at least one of A, B or C" would include but not be limited to systems with a alone, B alone, C alone, a and B together, a and C together, B and C together, and/or A, B, C together, etc.).
In the case where a directional instruction is involved in the embodiment of the present invention, the directional instruction is merely used to explain the relative positional relationship, movement condition, etc. between the components in a specific posture, and if the specific posture is changed, the directional instruction is changed accordingly.
In addition, if there is a description of "first", "second", etc. in the embodiments of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the meaning of "and/or" as it appears throughout includes three parallel schemes, for example "A and/or B", including the A scheme, or the B scheme, or the scheme where A and B are satisfied simultaneously. Also, the technical solutions of the embodiments may be combined with each other, but it is necessary to base the implementation on the basis of those skilled in the art, and when the technical solutions are contradictory or cannot be implemented, it should be considered that the combination of the technical solutions does not exist and is not within the scope of protection claimed by the present invention.
In the description of the present invention, it should be noted that the positional or positional relationship indicated by the terms such as "upper", "lower", "top", "bottom", "inner", "outer", etc. are based on the positional or positional relationship shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or element in question must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
Furthermore, in the description of the present invention, unless otherwise indicated, the meaning of "a plurality", "a plurality of groups" is two or more.
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The existing huge transfer processing sequence is generally Micro LED and driving backboard bonding metal preparation, pixel isolation column preparation, flip-chip bonding, laser peeling Micro LED substrate, residual gallium metal cleaning and film packaging, and then module packaging is carried out. However, the epitaxial layer is easy to be damaged by high-energy laser irradiation, residual gallium ions are difficult to be removed cleanly by laser bonding, and the epitaxial layer is easy to be damaged in the process of removing the residual gallium ions by a wet method.
In view of the above, the present invention provides a method for manufacturing a light emitting element and a light emitting element, which are aimed at solving the above problems. Referring to fig. 1 to 5, fig. 2 is a schematic flow chart of an embodiment of a method for manufacturing a light emitting device according to the present invention, in one embodiment, the method for manufacturing a light emitting device includes the following steps:
step S10: a buffer layer, an N-type semiconductor layer 103, a quantum well layer 102, and a P-type semiconductor layer 115 are sequentially grown on the substrate 101.
Step S20: the P-type semiconductor layer 115 and the quantum well layer 102 are etched through such that each LED pixel core in a single LED chip is broken at the quantum well layer 102 to form individual LED pixel cores.
Step S30: a current spreading layer 112 is deposited on the P-type semiconductor layer 115.
Step S40: a current blocking layer 110 is deposited over the current spreading layer 112.
Step S50: and transferring the LED chip to a driving circuit substrate, and completing packaging.
The substrate material of the semiconductor device is also referred to as a substrate material, and the epitaxial layer is grown on the substrate material. The LED substrate material has various kinds, and the sapphire substrate is adopted in the embodiment, so that the LED substrate material has the advantages of good chemical stability, no absorption of visible light and good light transmittance. The buffer layer and the light emitting structure are grown on the sapphire substrate by metal organic chemical vapor deposition (Metal Organic ChemicalVapor Deposition). The light emitting structure includes an N-type semiconductor layer 103, a quantum well layer 102, and a P-type semiconductor layer 115, which are sequentially formed, to constitute an epitaxial layer of the chip.
And etching the whole epitaxial wafer to the N-type semiconductor layer 103 through inductively coupled plasma to manufacture independent LED pixel core particles. The specific etching depth is generally 2-15um according to the growth thickness of different epitaxial wafers, and the P-type semiconductor layer 115 and the quantum well layer 102 are etched to cut off each LED pixel core particle in a single LED chip in the quantum well layer 102, so that each LED pixel core particle capable of emitting light independently is formed.
According to the matrix type LED light-emitting element structure, a single LED pixel core particle is usually subjected to repeated eutectic bonding, laser stripping of a substrate, cleaning of residual gallium ions, UV dispensing and cover plate glass packaging protection, and the transfer of the LED pixel core particle to a driving backboard is completed, wherein the epitaxial layer is easily damaged by the laser stripping of the substrate, the electrical or optical property of the light-emitting element is damaged, and the working procedures of laser stripping of the substrate, UV dispensing, cover plate packaging and the like can be omitted through the light-emitting element structure and the preparation scheme, so that the process difficulty and cost are effectively reduced.
Further, in the present embodiment, the step S50 includes the steps of:
step S501: the P-type electrode 111, the N-type electrode 114, and the LED bond metal 104 are plated by vacuum evaporation.
Step S502: the N-type semiconductor layer 103, the quantum well layer 102, the P-type semiconductor layer 115, the current spreading layer 112, and the P-type electrode 111 are sidewall-protected.
Step S503: and filling a black matrix layer 113 in the gaps of the LED pixel core particles by adopting a photoetching method.
Step S504: and plating the driving backboard bond metal 107In column or bond metal InSn column or bond metal AuSn column by adopting a vacuum evaporation method.
Step S505: the insulating spacers 106 between the driving backplate bond metal 107 are fabricated by photolithography.
Step S506: and adopting a flip-chip bonding cold pressure welding technology to weld the LED chip and the driving backboard.
It is understood that bonding is a technique in which two pieces of surface-cleaned, atomically flat, homogeneous or heterogeneous semiconductor materials are subjected to surface cleaning and activation treatment, and are directly bonded under certain conditions, and wafers are bonded together by van der waals forces, molecular forces, and even atomic forces. The vacuum evaporation coating is a vacuum coating method in which an evaporation material is heated by an evaporator under vacuum conditions to sublimate the evaporation material, the evaporation particle flow is directly emitted to a substrate, and a solid film is formed on the substrate by deposition, or the evaporation coating material is heated.
In this embodiment, the P-type electrode 111, the N-type electrode 114, and the LED bond metal 104 are plated by vacuum vapor deposition. The P-type electrode 111 and the N-type electrode 114 are mainly composed of Au, the deposition thickness is 1 um-10 um, the LED bond metal 104 is mainly composed of In, inSn or AuSn, and the deposition thickness is 2 um-8 um.
And a black matrix layer 113 is filled in the gaps of the LED pixel core particles by adopting a photoetching method, and the thickness of the film layer is 3-6 um, so that the effect of avoiding light crosstalk after the LED quantum well layer 102 is electrified and emits light is achieved. The driving backboard adopts a vacuum evaporation plating method to plate the driving backboard bond metal 107In or InSn or AuSn column, and the deposition thickness is 3 um-6 um. The insulating spacers 106 between the driving backplate bonding metals 107 are fabricated by photolithography. The black matrix layer 113 (black matrix) is a black photoresist, the material itself is black, the black material can absorb visible light of various wave bands, adjacent LEDs separated by the black matrix layer material, and the adjacent LED core particles after being electrified emit light, so that no optical crosstalk is generated.
The insulating spacers 106 separate the bonded LED pixel cores, and the spacers themselves are made of insulating photoresist material, thus providing insulation. The In, inSn or AuSn columns are respectively LED pixel core particles and a top metal bonding pad of the driving backboard, and the structure is used as a flip-chip bonding cold-press welding material.
And the LED chip and the driving backboard are welded by adopting a flip-chip bonding cold pressure welding technology, wherein the welding temperature is 100-120 ℃, and the bonding pressure is 3-30 kg.
Further, in the present embodiment, step S502 includes the steps of:
step S5021: deposition of Al using plasma enhanced atomic layer 2 O 3 A thin film encapsulation layer 116.
Step S5022: etching Al using inductively coupled plasma 2 O 3 The LED bond metal 104 is exposed.
In this embodiment, plasma Enhanced Atomic Layer Deposition (PEALD) is an advanced method to enhance ALD performance by replacing water with plasmatized gaseous atoms as the oxide.
In this embodiment, the plasma enhanced atomic layer deposition device (PEALD) alternately introduces the gaseous precursor trimethylaluminum pulse into the reactor and enhances the activity of the reactant under the plasma, and finally the precursor is chemically adsorbed and reacts at a certain temperature to form a monoatomic layer Al2O film, which is deposited on the surface layer of the LED chip, so as to play a role in covering the LED core particle by the thin film package, and particularly, the side wall gap of the LED pixel core particle has a good covering insulation protection role. The inductively coupled plasma apparatus is used to chemically react with the Al2O3 by using a plasma activated reactive gas, which is eventually removed, where the Al2O3 film covering the LED bonding metal 104 is removed.
Further, in the present embodiment, step S30 includes the steps of:
step S301: an ITO layer is deposited on the surface of the P-type semiconductor layer 115 using a magnetron sputtering process.
Step S302: controlling the deposition thickness of the ITO layer to be
To form a P-type ohmic contact after annealing.
In this embodiment, in step S30, an ITO layer is deposited on the surface of the P-type semiconductor layer 115 by using a magnetron sputtering process, where the thickness of the deposited layer is
The current spreading layer 112 is deposited on the surface of the P-type semiconductor layer 115, and forms a P-type ohmic contact after annealing. The ITO is mainly composed of indium tin oxide, is a semiconductor transparent conductive film, has the characteristics of low resistivity and high light transmittance, and meets the requirements of good conductivity and light transmittance; the ITO function is to make the electrode and the epitaxial layer form good ohmic contact, so that current is diffused on the surface of the electrode, better led into the electrode, and reduced voltage.
Further, in the present embodiment, step S40 includes the steps of:
step S401: deposition of SiO on the current spreading layer at 200-400 ℃ using plasma enhanced vapor deposition 2 And (5) coating.
In the present embodiment, the current blocking layer 110 is deposited at a temperature of 200-500 ℃ using a plasma enhanced vapor deposition method, and the current blocking layer 110 uses SiO 2 Deposit film coating, deposit thickness
In addition, in order to achieve the above object, referring to fig. 1 and 5, the present invention also provides a light emitting element including a substrate 101, an N-type semiconductor layer 103, a quantum well layer 102, a P-type semiconductor layer 115, a current spreading layer 112, a current blocking layer 110, a thin film encapsulation layer 116, an LED bonding metal 104, a P-type electrode 111, an N-type electrode 114, a black matrix layer 113, a driving back plate bonding metal 107, a driving back plate pixel electrode 105, a driving back plate common electrode 108, an insulating spacer 106, a driving back plate pad 109; wherein each LED chip is connected with the driving backboard bonding metal 107 through the LED bonding metal 104. Here, the ohmic contact effect is mainly used. Ohmic contact between metal and semiconductor means that there is a pure resistance at the contact and the smaller the resistance the better, so that most of the voltage drop is in the Active region and not at the contact surface when the assembly is operating. Therefore, the I-V characteristic is a linear relation, and the larger the slope is, the smaller the contact resistance is, and the size of the contact resistance directly influences the performance index of the device. Ohmic contacts are widely used in metal processing, and the main implementation measure is to carry out high doping on the surface layer of a semiconductor or introduce a large number of recombination centers.
Further, in the present embodiment, each LED chip is connected to the driving back plate pixel electrode 105 through the P-type semiconductor layer 115, and each LED chip is connected to the driving back plate common electrode 108 through the N-type semiconductor layer 103 to form a loop. Note that the driving back plate common electrode 108, i.e., the N electrode is electrically interconnected with the LED N electrode.
Further, in the present embodiment, each LED chip shares the N-type semiconductor layer 103, and is connected to the LED bonding metal 104 through the N-type electrode 114 to be electrically interconnected, thereby realizing an ohmic contact function.
Further, in the present embodiment, each LED chip is electrically connected to the LED bonding metal 104 through the P-type electrode 111 by the P-type semiconductor layer 115 alone, so as to realize an ohmic contact function.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention. While the foregoing is directed to embodiments of the present invention, other and further details of the invention may be had by the present invention, it should be understood that the foregoing description is merely illustrative of the present invention and that no limitations are intended to the scope of the invention, except insofar as modifications, equivalents, improvements or modifications are within the spirit and principles of the invention.
Claims (9)
1. A method of manufacturing a light emitting element, comprising the steps of:
sequentially growing a buffer layer, an N-type semiconductor layer, a quantum well layer and a P-type semiconductor layer on a substrate;
etching to penetrate through the P-type semiconductor layer and the quantum well layer so that each LED pixel core particle in the single LED chip is disconnected in the quantum well layer to form independent LED pixel core particles;
depositing a current expansion layer on the P-type semiconductor layer;
depositing a current blocking layer on the current spreading layer;
and transferring the LED chip to a driving circuit substrate, and completing packaging.
2. The method of manufacturing a light emitting element according to claim 1, wherein transferring the LED chip onto the driving circuit substrate and completing the packaging comprises the steps of:
plating the P-type electrode, the N-type electrode and the LED bond metal by adopting a vacuum evaporation method;
the side wall protection is carried out on the N-type semiconductor layer, the quantum well layer, the P-type semiconductor layer, the current expansion layer and the P-type electrode;
filling a black matrix layer in the gaps of the LED pixel core particles by adopting a photoetching method;
plating a driving backboard bonding metal In or InSn or AuSn column by adopting a vacuum evaporation method;
manufacturing an insulating isolation column for driving the backboard to bond with the metal by adopting a photoetching method;
and adopting a flip-chip bonding cold pressure welding technology to weld the LED chip and the driving backboard.
3. The method of manufacturing a light-emitting device according to claim 2, wherein the step of protecting the N-type semiconductor layer, the quantum well layer, the P-type semiconductor layer, the current spreading layer, and the P-type electrode from the side wall comprises:
deposition of Al using plasma enhanced atomic layer 2 O 3 A thin film encapsulation layer;
etching Al using inductively coupled plasma 2 O 3 The LED bond metal is exposed.
4. The method of manufacturing a light-emitting element according to claim 1, wherein the step of depositing a current spreading layer on the P-type semiconductor layer comprises:
depositing an ITO layer on the surface of the P-type semiconductor layer by adopting a magnetron sputtering process;
controlling the deposition thickness of the ITO layer to be
To form a P-type ohmic contact after annealing.
5. The method of manufacturing a light-emitting element according to claim 1, wherein the step of depositing a current blocking layer on the current spreading layer comprises:
deposition of SiO on the current spreading layer at 200-400 ℃ using plasma enhanced vapor deposition 2 And (5) coating.
6. The light-emitting element is characterized by comprising a substrate, an N-type semiconductor layer, a quantum well layer, a P-type semiconductor layer, a current expansion layer, a current blocking layer, a film packaging layer, LED bonding metal, a P-type electrode, an N-type electrode, a black matrix layer, driving backboard bonding metal, a driving backboard pixel electrode, a driving backboard common electrode, an insulating isolation column and a driving backboard bonding pad;
each LED chip is connected with the driving backboard through the LED bonding metal in a bonding metal mode.
7. The light-emitting element according to claim 6, wherein each LED chip is connected to the driving back plate pixel electrode through the P-type semiconductor layer, and each LED chip is connected to the driving back plate common electrode through the N-type semiconductor layer to form a loop.
8. The light-emitting element according to claim 6, wherein each LED chip shares the N-type semiconductor layer and is connected to the LED bond metal via the N-type electrode.
9. The light-emitting element according to claim 6, wherein each LED chip is metal-bonded to the LED through the P-type electrode by using the P-type semiconductor layer alone.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117153961A (en) * | 2023-10-31 | 2023-12-01 | 季华实验室 | HEMT-driven micro LED integrated backboard and manufacturing method thereof |
| CN117219715A (en) * | 2023-11-08 | 2023-12-12 | 华引芯（武汉）科技有限公司 | Preparation method of micro LED matrix light source and micro LED matrix light source |
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2023
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117153961A (en) * | 2023-10-31 | 2023-12-01 | 季华实验室 | HEMT-driven micro LED integrated backboard and manufacturing method thereof |
| CN117153961B (en) * | 2023-10-31 | 2024-02-13 | 季华实验室 | HEMT-driven micro LED integrated backboard and manufacturing method thereof |
| CN117219715A (en) * | 2023-11-08 | 2023-12-12 | 华引芯（武汉）科技有限公司 | Preparation method of micro LED matrix light source and micro LED matrix light source |
| CN117219715B (en) * | 2023-11-08 | 2024-03-01 | 华引芯（武汉）科技有限公司 | Preparation method of micro LED matrix light source and micro LED matrix light source |
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