CN1945776A - Photoelectric cathode and process for preparing vacuum ultraviolet electric device using said cathode - Google Patents
Photoelectric cathode and process for preparing vacuum ultraviolet electric device using said cathode Download PDFInfo
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- CN1945776A CN1945776A CN 200610022021 CN200610022021A CN1945776A CN 1945776 A CN1945776 A CN 1945776A CN 200610022021 CN200610022021 CN 200610022021 CN 200610022021 A CN200610022021 A CN 200610022021A CN 1945776 A CN1945776 A CN 1945776A
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Abstract
This invention discloses a photoelectric cathode composed of three compound layers, in which, the base layer is made of an ultraviolet transmitting base material, the mid layer is a transparent conduction layer film characterizing that the third layer is a photoelectric emission layer composed of a ZnO film or nanometer line arrays. A method for preparing vacuum UV-devices by said photoelectric cathodes includes the following steps: A, preparation of photoelectric cathodes, B, molding films of the ZnO photoelectric cathode and testing the performance, selecting cathodes meeting the requirement to exhaust and package, packaging the devices applying said photoelectric cathode, which fully utilizes the photoemission and field emission effect of ZnO to solve the shortcoming of the current technology.
Description
Technical field
The present invention relates to the photoelectricity vacuum device, be specifically related to a kind of photocathode and the preparation technology who utilizes the vacuum ultraviolet (VUV) photoelectric device of this negative electrode.
Background technology
Traditional ultraviolet light photo tube device, because the restriction of material and corresponding fabricating technology, in the deficiency that shows the following aspects aspect photocathode and the device preparing process:
1, the exhaust of the preparation of photocathode and device, encapsulation have relatively high expectations (10 to the vacuum degree of system
-5-10
-8Pa), make that the production equipment of this class is relatively more expensive; 2, on the envelope row technology of preparation, generally all adopt disposable preparation envelope row technology, whole process is finished in same equipment, thereby brings the shortcoming of two aspects:
1., in the manufacture process of photocathode, easily cause other parts, for example the pollution of shell etc.;
2., because use that can't overall arrangement equipment makes that the cycle of device production is long, the efficient reduction that equipment uses has increased the production cost that brings because of equipment depreciation virtually.
3. owing to the monitoring (parameters such as quality of forming film, thickness) to photocathode is difficult relatively, cause end product defective, the waste of other parts in the envelope row technology of bringing.
3, the photocathode operating voltage height of traditional ultraviolet light photo device to the power requirement height, is unfavorable for that on the one hand the device volume miniaturization drives the development of gesture, on the other hand, makes that also the cost of power supply is high.
4, traditional vacuum ultraviolet (VUV) photoelectric device because the photocathode material performance is strong to the environmental condition dependence, makes the stability of this series products to be subjected to the influence of environmental condition bigger.
Be a kind of well behaved semi-conducting material for zinc oxide in addition, can be as the electric transmission layer material in the membrane field emission cathode.Practical application for zinc-oxide film, people pay close attention to always, transparency electrode bulk acoustic wave device (BAW) surface acoustic wave device (SAW), fields such as piezo-resistance, humidity, gas sensor, solar cell, in the development that also only focuses on the solid state device aspect aspect the short wavelength light electronic device, example guide type ultraviolet detectors etc., singly the usefulness in vacuum ultraviolet (VUV) photoelectric device field also is in blank.
Summary of the invention
The technical problem to be solved in the present invention is the preparation technology who how a kind of photocathode is provided and utilizes the vacuum ultraviolet (VUV) photoelectric device of this photocathode, this photocathode and to adopt the device of this negative electrode be a kind of new-type vacuum ultraviolet (VUV) photoelectric device, the photoelectric effect and the field emission effect of zinc oxide have been made full use of, solve present the deficiencies in the prior art part, and possessed many new characteristics; This preparation technology is easy to arrange the use of equipment, solved the pollution that the traditional vacuum photoelectric device causes other parts such as shells in its photocathode preparation process, solved the difficult problem that photocathode preparation procedure and device row envelope technology can not be carried out separately step by step, simplify technological process, enhance productivity.
First technical problem of the present invention is to solve like this: a kind of photocathode is provided, constitute by three composite beds, basalis is made of saturating purple base material, the middle level is the electrically conducting transparent layer film, it is characterized in that, the 3rd layer is photoemissive layer, and it is to be made of the film of zinc oxide or nano-wire array.
According to photocathode provided by the present invention, it is characterized in that described purple base material is sapphire or quartz; Described electrically conducting transparent layer film is crome metal film or zinc-oxide film.
Second technical problem of the present invention is to solve like this: a kind of preparation technology who utilizes the vacuum ultraviolet (VUV) photoelectric device of above-mentioned photocathode is provided, it is characterized in that may further comprise the steps:
The preparation of A, photocathode
(1) selects the less saturating purple base material of lattice mismatch as window,, be processed into corresponding size and shape according to the requirement of device;
(2) on above-mentioned base material, prepare the membrane of conducting layer that satisfies requirement on devices;
(3) film or the nano-wire array of preparation zinc oxide material on above-mentioned conductive layer;
B, zinc oxide photocathode film forming and performance test, the negative electrode of selecting to meet the demands carries out exhaust, encapsulation;
Row's envelope of the vacuum ultraviolet (VUV) device of C, the above-mentioned photocathode of employing
(1) will be placed in the vacuum system together with the photocathode that meets the demands by exhaust packaged device parts;
(2) by the difference requirement of device heat up accordingly exhaust and degassing processing;
(3) after the end to be degassed, the photocathode for preparing is shifted encapsulation;
(4) take off and promptly obtain corresponding vacuum ultraviolet (VUV) photoelectric device after the encapsulation.
Preparation technology according to vacuum ultraviolet (VUV) photoelectric device provided by the present invention is characterized in that, described purple base material can be chosen quartz or sapphire, and described electrically conducting transparent layer film can be chosen crome metal film or zinc-oxide film.
Preparation technology according to vacuum ultraviolet (VUV) photoelectric device provided by the present invention is characterized in that, the generation temperature of preparation zinc-oxide film is about 700 ℃.
The technical solution used in the present invention is compared the advantage and the good effect that have with existing technology as follows:
1, itself for the zinc-oxide film growth, its growth temperature is 700 ℃, more much lower than GaN (1050 ℃ of growth temperatures), help reducing requirement and energy consumption to equipment, on the other hand, its film forming characteristics is good, commonly used thin film technique such as MOCVD, and magnetic control system is surveyed to penetrate etc. and all can be generated comparatively ideal zinc-oxide film;
2, the zinc oxide abundant raw materials is nontoxic, and cost is low to be ep-type material;
3, in the quality control of photocathode preparation, can adopt means of testing such as XRD, PL to test, guarantee that the zinc oxide photocathode is quality controlled, in the process of producing device, can in time eliminate underproof photocathode and select qualified product to arrange envelope, avoid the unnecessary waste that other parts such as shell are brought;
4, on the manufacturing cycle of homogeneous tube, on the inconvenient problem that once equipment, the service efficiency of preparation row envelope are low at present, life cycle length is brought, the present invention can realize that photocathode preparation and device row seal and can carry out separately by substep, be easy to arrange the use of equipment, simplify technological process, enhance productivity, on the other hand, because the preparation of photocathode and the row of homogeneous tube envelope can independently be carried out, and have solved the pollution that the traditional vacuum photoelectric device causes other parts such as shells in its photocathode preparation process;
5, the row of zinc oxide photocathode envelope reduces greatly to the equipment vacuum requirements, has reduced the cost of equipment to a great extent;
6, the operating voltage of zinc oxide photocathode is relatively low than existing product, makes this series products reduce the requirement of power supply, helps device to miniaturization, the development of low energy consumption aspect;
7, the physicochemical properties of zinc oxide are compared relatively stablely with traditional vacuum ultraviolet light photo material, and find the less saturating purple base material of character mismatch degree easily, example: quartzy, Sapphire Substrate.
Description of drawings
Fig. 1 is a zinc oxide photocathode structural representation provided by the present invention;
Fig. 2 is the structural representation of zinc oxide photocathode vacuum ultraviolet (VUV) device provided by the present invention;
Fig. 3 is the vacuum ultraviolet (VUV) device preparing process flow chart of employing zinc oxide photocathode provided by the present invention;
Fig. 4 is the process flow diagram of preparation zinc oxide photocathode ultraviolet imaging enhancer.
Embodiment
The present invention is described in detail below in conjunction with accompanying drawing.
Fig. 1 is a zinc oxide photocathode structural representation provided by the present invention, Fig. 2 is the structural representation of zinc oxide photocathode vacuum ultraviolet (VUV) device provided by the present invention, wherein, 1, saturating purple base material, 2, electrically conducting transparent layer film, 3, zinc-oxide film or nano-wire array layer, 4, photocathode, 5, the shell of photoelectric device.This photocathode is made of three composite beds, basalis is made by the less saturating purple base material 1 of the character distortion factor, the middle level is an electrically conducting transparent layer film 2, conductive layer is provided with the film or the nano-wire array layer 3 of zinc oxide, wherein saturating purple base material 1 is sapphire or quartz, electrically conducting transparent layer film 2 is crome metal film or zinc-oxide film, and the photocathode 4 for preparing is encapsulated on the shell 5 of vacuum ultraviolet (VUV) photoelectric device.
Fig. 3 is the vacuum ultraviolet (VUV) device preparing process flow chart of employing zinc oxide photocathode provided by the present invention.At first select saturating purple base materials such as sapphire or quartz as window, processed is carried out in requirement according to device, the membrane of conducting layer of requirement on devices is satisfied in preparation on the basalis of handling well, the thickness of this membrane of conducting layer satisfies in the scope of optical transmittance 75-95%, the general crome metal film that adopts, the film or the nano-wire array layer of preparation zinc oxide material are used as photoemissive layer on this conductive layer, and the growth temperature of zinc oxide can be about 700 ℃; Secondly, with photocathode film forming and the performance test for preparing, the negative electrode of selecting to meet the demands carries out exhaust, encapsulation; Several parts to the vacuum ultraviolet (VUV) photoelectric device carry out processed then, the preparation shell, handle shell, moving survey, again according to the different structure of device, device is carried out exhaust and encapsulation, and concrete steps are as follows: 1. will be placed in the vacuum system together with the photocathode of preparing in the step 2 that meets the demands by exhaust packaged device parts; 2. by the difference requirement of device heat up accordingly exhaust and degassing processing; 3. after the end to be degassed, the photocathode for preparing is shifted encapsulation, parameters such as concrete package temperature are done corresponding adjustment with the different of the visual part category of mode; 4. take off after the encapsulation and promptly obtain corresponding vacuum ultraviolet (VUV) photoelectric device; Carry out seasoned, test, ring examination, packing back warehouse-in at last.
Fig. 4 prepares the process flow diagram of zinc oxide photocathode ultraviolet imaging enhancer, and it is a specific embodiment of preparation vacuum ultraviolet (VUV) device:
1, choosing can be cut down material and hang down envelope through drawing through clean and fibre faceplate, heavyly on fibre faceplate shields, deposits organic membrane phosphor screen is made in process evaporation of aluminum and roasting again;
2, can cut down part and ceramic ring soldering and make shell after cleaning the annealing in hydrogen atmosphere processing, it is stand-by to fill out molybdenum in sealing-in molybdenum groove;
3, the phosphor screen with preparation in the step 1 welds together by argon arc welding with the shell spare that the step punching out is equipped with, and fit on MCP;
4, preparation crome metal conducting film on quartzy panel, it is 90%-95% that thickness satisfies transmitance, prepares the zinc oxide photocathode thereon again;
5, the photocathode shell is placed in the vacuum exhaust transfer system and earlier MCP is washed away, to be warming up to 250 ℃, shift sealing-in and lower the temperature naturally, taking-up.
Claims (4)
1, a kind of photocathode is made of three composite beds, and basalis is made of saturating purple base material, and the middle level is the electrically conducting transparent layer film, it is characterized in that, the 3rd layer is photoemissive layer, and it is to be made of the film of zinc oxide or nano-wire array.
2, photocathode according to claim 1 is characterized in that, described purple base material is sapphire or quartz; Described electrically conducting transparent layer film is crome metal film or zinc-oxide film.
3, a kind of preparation technology who utilizes the vacuum ultraviolet (VUV) photoelectric device of claim 1 or 2 described photocathodes is characterized in that may further comprise the steps:
The preparation of A, photocathode
(1) selects saturating purple base material as window,, be processed into corresponding size and shape according to the requirement of device;
(2) on above-mentioned base material, prepare the membrane of conducting layer that satisfies requirement on devices;
(3) film or the nano-wire array of preparation zinc oxide material on above-mentioned conductive layer;
B, zinc oxide photocathode film forming and performance test, the negative electrode of selecting to meet the demands carries out exhaust, encapsulation
Row's envelope of the vacuum ultraviolet (VUV) device of C, the above-mentioned photocathode of employing
(1) will be placed in the vacuum system together with the photocathode that meets the demands by exhaust packaged device parts;
(2) by the difference requirement of device heat up accordingly exhaust and degassing processing;
(3) after the end to be degassed, the photocathode for preparing is shifted encapsulation;
(4) take off and promptly obtain corresponding vacuum ultraviolet (VUV) photoelectric device after the encapsulation.
4, the preparation technology of vacuum ultraviolet (VUV) photoelectric device according to claim 3 is characterized in that, described purple base material can be chosen quartz or sapphire, and described electrically conducting transparent layer film can be chosen crome metal film or zinc-oxide film.
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|---|---|---|---|
| CN 200610022021 CN1945776A (en) | 2006-10-10 | 2006-10-10 | Photoelectric cathode and process for preparing vacuum ultraviolet electric device using said cathode |
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|---|---|---|---|
| CN 200610022021 CN1945776A (en) | 2006-10-10 | 2006-10-10 | Photoelectric cathode and process for preparing vacuum ultraviolet electric device using said cathode |
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| CN1945776A true CN1945776A (en) | 2007-04-11 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324369A (en) * | 2011-09-14 | 2012-01-18 | 成都凯迈科技有限公司 | Double-row direct insertion type ultraviolet photoelectric tube |
| CN102385939A (en) * | 2011-12-09 | 2012-03-21 | 电子科技大学 | AlZnO UV photocathode material and UV vacuum phototube |
| CN102403048A (en) * | 2011-12-09 | 2012-04-04 | 电子科技大学 | AlZnO ultraviolet photoelectric cathode material and ultraviolet vacuum image intensifier |
| CN103594302A (en) * | 2013-11-19 | 2014-02-19 | 东华理工大学 | GaAs nanowire array photocathode and manufacturing method thereof |
| CN104752117A (en) * | 2015-03-03 | 2015-07-01 | 东华理工大学 | NEA electron source for vertically emitting AlGaAs/GaAs nanowires |
| CN105684122A (en) * | 2013-11-01 | 2016-06-15 | 浜松光子学株式会社 | Transmission photocathode |
| CN107275168A (en) * | 2017-06-06 | 2017-10-20 | 东南大学 | A kind of novel nano structure photocathode based on titanium nitride |
-
2006
- 2006-10-10 CN CN 200610022021 patent/CN1945776A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324369A (en) * | 2011-09-14 | 2012-01-18 | 成都凯迈科技有限公司 | Double-row direct insertion type ultraviolet photoelectric tube |
| CN102385939A (en) * | 2011-12-09 | 2012-03-21 | 电子科技大学 | AlZnO UV photocathode material and UV vacuum phototube |
| CN102403048A (en) * | 2011-12-09 | 2012-04-04 | 电子科技大学 | AlZnO ultraviolet photoelectric cathode material and ultraviolet vacuum image intensifier |
| CN105684122A (en) * | 2013-11-01 | 2016-06-15 | 浜松光子学株式会社 | Transmission photocathode |
| US9824844B2 (en) | 2013-11-01 | 2017-11-21 | Hamamatsu Photonics K.K. | Transmission mode photocathode |
| CN105684122B (en) * | 2013-11-01 | 2018-01-05 | 浜松光子学株式会社 | Infiltration type photocathode |
| CN103594302A (en) * | 2013-11-19 | 2014-02-19 | 东华理工大学 | GaAs nanowire array photocathode and manufacturing method thereof |
| CN103594302B (en) * | 2013-11-19 | 2016-03-23 | 东华理工大学 | A kind of GaAs nano-wire array photocathode and preparation method thereof |
| CN104752117A (en) * | 2015-03-03 | 2015-07-01 | 东华理工大学 | NEA electron source for vertically emitting AlGaAs/GaAs nanowires |
| CN107275168A (en) * | 2017-06-06 | 2017-10-20 | 东南大学 | A kind of novel nano structure photocathode based on titanium nitride |
| CN107275168B (en) * | 2017-06-06 | 2019-03-29 | 东南大学 | A kind of novel nano structure photocathode based on titanium nitride |
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Open date: 20070411 |