CN112445059A - Optical proximity correction, photomask manufacturing and graphical method - Google Patents
Optical proximity correction, photomask manufacturing and graphical method Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
Abstract
An optical proximity correction, photomask manufacturing and patterning method comprises the following steps: respectively setting a first tolerance and a second tolerance for a first sub-graph and a second sub-graph in a first initial graph, wherein the first tolerance is less than the second tolerance; and carrying out optical proximity correction on the first initial graph, wherein in the correction process, if the first edge placement error is less than or equal to a first tolerance and the second edge placement error is less than or equal to a second tolerance, the optical proximity correction is finished, and the first corrected graph is obtained. The optical proximity correction method provided by the invention can improve correction precision and correction efficiency.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to an optical proximity correction, photomask manufacturing and patterning method.
Background
The photoetching technology is a vital technology in the semiconductor manufacturing technology, and can realize the transfer of a pattern from a mask to the surface of a silicon wafer to form a semiconductor product meeting the design requirement. The photolithography process includes an exposure step, a development step performed after the exposure step, and an etching step after the development step. In the exposure step, light irradiates on a silicon wafer coated with photoresist through a light-transmitting area in a mask plate, and the photoresist undergoes a chemical reaction under the irradiation of the light; in the developing step, photoetching patterns are formed by utilizing the different dissolution degrees of photosensitive and non-photosensitive photoresist to a developer, so that the mask pattern is transferred to the photoresist; in the etching step, the silicon wafer is etched based on the photoetching pattern formed by the photoetching adhesive layer, and the pattern of the mask is further transferred to the silicon wafer.
In semiconductor manufacturing, as the design size is continuously reduced and the design size is closer to the limit of the lithography imaging system, the diffraction Effect of light becomes more and more obvious, which causes the Optical image degradation of the design pattern, the actual formed lithography pattern is seriously distorted relative to the pattern on the mask, and the actual pattern and the design pattern formed by lithography on the silicon wafer are different, and this phenomenon is called Optical Proximity Effect (OPE).
In order to correct for Optical Proximity effects, an Optical Proximity Correction (OPC) is generated. The core idea of the optical proximity correction is to establish an optical proximity correction model based on the consideration of counteracting the optical proximity effect, and design a photomask graph according to the optical proximity correction model, so that although the optical proximity effect occurs to the photomask graph corresponding to the photoetched photoetching graph, the counteraction of the phenomenon is considered when the photomask graph is designed according to the optical proximity correction model, and therefore the photoetched photoetching graph is close to a target graph actually expected by a user.
However, the optical proximity correction in the prior art has low correction accuracy and correction efficiency.
Disclosure of Invention
The invention aims to provide an optical proximity correction method, an optical mask plate manufacturing method and a graphical method to improve correction precision and correction efficiency.
To solve the above technical problem, an embodiment of the present invention provides an optical proximity correction method, including: providing a first initial graph, wherein the first initial graph comprises a first sub graph and a second sub graph; respectively setting a first tolerance and a second tolerance for the first sub-graph and the second sub-graph, wherein the first tolerance is smaller than the second tolerance; carrying out simulated exposure on the first initial graph to obtain a first simulated graph and a second simulated graph corresponding to the first sub-graph and the second sub-graph respectively; comparing the first simulation graph with the first sub graph and the second simulation graph with the second sub graph to obtain a first edge placement error and a second edge placement error; judging whether the first edge placement error is less than or equal to the first tolerance or not and whether the second edge placement error is less than or equal to the second tolerance or not; if the judgment result is yes, finishing the optical proximity correction to obtain a first corrected graph; if the judgment result is negative, adjusting the first sub-pattern and the second sub-pattern, and re-executing the steps of exposure and comparison until the optical proximity correction is completed to obtain a first corrected pattern.
Optionally, the method further includes: carrying out simulated exposure on the first corrected graph to obtain a first corrected simulated graph; adjusting the first corrected simulation graph to obtain a second initial graph; and performing m-time optical proximity correction on the second initial graph to obtain a second corrected graph, wherein m is a natural number greater than or equal to 1.
Optionally, the first modified simulation pattern includes a first sub-modified simulation pattern and a second sub-modified simulation pattern, and the method for adjusting the first modified simulation pattern includes: respectively taking a plurality of sampling points on the first sub-graph and the second sub-graph, and determining corresponding positions of the plurality of sampling points on the first sub-correction simulation graph and the second sub-correction simulation graph; comparing the position difference of the same sampling point in the first sub-graph and the first sub-correction simulation graph with the position difference of the same sampling point in the second sub-graph and the second sub-correction simulation graph to obtain a third edge placement error and a fourth edge placement error; obtaining an average value of the third edge placement errors as an average third edge placement error, and obtaining an average value of the fourth edge placement errors as an average fourth edge placement error; adjusting the edge corresponding to the sampling point in the first sub-correction simulation graph by taking the average third edge placement error as a reference; and adjusting the corresponding edge of the sampling point in the second sub-correction simulation graph by taking the average fourth edge placement error as a reference.
Optionally, before performing optical proximity correction on the second initial pattern, a third tolerance is set for the second initial pattern, where the third tolerance is 0.
Optionally, the method for obtaining the first edge placement error and the second edge placement error includes: respectively taking a plurality of sampling points on the first sub-graph and the second sub-graph, and determining corresponding positions of the plurality of sampling points on the first simulation graph and the second simulation graph; comparing the position difference of the same sampling point in the first sub-graph and the first simulation graph to obtain a first edge placement error; and comparing the position difference of the same sampling point in the second sub-graph and the second simulation graph to obtain a second edge placement error.
Optionally, the step of adjusting the first sub-pattern includes: according to the difference between the edge placement errors of different sampling points and the first tolerance, obtaining sampling points corresponding to the edge placement errors larger than the first tolerance, and adjusting edges corresponding to the sampling points in the first sub-graph; the step of adjusting the second sub-pattern comprises: and according to the difference between the edge placement errors of different sampling points and the second tolerance, obtaining the sampling points corresponding to the edge placement errors larger than the second tolerance, and adjusting the edges corresponding to the sampling points in the second sub-graph.
The invention also provides a method for manufacturing the photomask, which comprises the following steps: providing a first initial graph, wherein the first initial graph comprises a first sub graph and a second sub graph; respectively setting a first tolerance and a second tolerance for the first sub-graph and the second sub-graph, wherein the first tolerance is smaller than the second tolerance; carrying out simulated exposure on the first initial graph to obtain a first simulated graph and a second simulated graph corresponding to the first sub-graph and the second sub-graph respectively; comparing the first simulation graph with the first sub graph and the second simulation graph with the second sub graph to obtain a first edge placement error and a second edge placement error; judging whether the first edge placement error is less than or equal to the first tolerance or not and whether the second edge placement error is less than or equal to the second tolerance or not; if the judgment result is yes, finishing the optical proximity correction to obtain a first corrected graph; if the judgment result is negative, adjusting the first sub-pattern and the second sub-pattern, and re-executing the steps of exposure and comparison until the optical proximity correction is completed to obtain a first corrected pattern; and transferring the obtained first corrected graph to a photomask plate to form a first mask plate graph.
Optionally, after the forming the first correction pattern, the method further includes: carrying out simulated exposure on the first corrected graph to obtain a first corrected simulated graph; adjusting the first corrected simulation graph to obtain a second initial graph; performing m-time optical proximity correction on the second initial graph to obtain a second corrected graph, wherein m is a natural number greater than or equal to 1; and transferring the second corrected graph to a photomask plate to form a second mask plate graph.
The invention also provides a graphical method, which comprises the following steps: providing a first initial graph, wherein the first initial graph comprises a first sub graph and a second sub graph; respectively setting a first tolerance and a second tolerance for the first sub-graph and the second sub-graph, wherein the first tolerance is smaller than the second tolerance; carrying out simulated exposure on the first initial graph to obtain a first simulated graph and a second simulated graph corresponding to the first sub-graph and the second sub-graph respectively; comparing the first simulation graph with the first sub graph and the second simulation graph with the second sub graph to obtain a first edge placement error and a second edge placement error; judging whether the first edge placement error is less than or equal to the first tolerance or not and whether the second edge placement error is less than or equal to the second tolerance or not; if the judgment result is yes, finishing the optical proximity correction to obtain a first corrected graph; if the judgment result is negative, adjusting the first sub-pattern and the second sub-pattern, and re-executing the steps of exposure and comparison until the optical proximity correction is completed to obtain a first corrected pattern; transferring the obtained first corrected graph to a photomask plate to form a first mask plate graph; and transferring the first mask pattern to a wafer to form a first target pattern.
Optionally, after the forming the first correction pattern, the method further includes: carrying out simulated exposure on the first corrected graph to obtain a first corrected simulated graph; adjusting the first corrected simulation graph to obtain a second initial graph; performing m-time optical proximity correction on the second initial graph to obtain a second corrected graph, wherein m is a natural number greater than or equal to 1; transferring the second corrected graph to a photomask plate to form a second photomask plate graph; and transferring the second mask pattern to a wafer to form a second target pattern.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
in the optical proximity correction method provided by the invention, the first initial graph comprises a first sub-graph and a second sub-graph, and a first tolerance and a second tolerance are respectively set for the first sub-graph and the second sub-graph, wherein the first tolerance is less than the second tolerance. When the optical proximity correction is performed on the first initial graph with different requirements on the correction accuracy of the first sub-graph and the second sub-graph, the optical proximity correction can be completed as long as the first edge placement error and the second edge placement error respectively meet the corresponding first tolerance and second tolerance. When the first sub-pattern can not be repaired in place, due to the arrangement of the second tolerance which is larger than the first tolerance, the second sub-pattern can automatically adjust the pattern within the range of the second tolerance, space is provided for the correction of the first sub-pattern, the first sub-pattern can meet the repair requirement, on one hand, the correction precision of the first sub-pattern can be improved, on the other hand, the optical proximity correction does not need to be quit to change the second sub-pattern, and the correction efficiency can be improved
Further, carrying out simulated exposure on the first corrected graph to obtain a first corrected simulated graph; and adjusting the first corrected simulation graph to obtain a second initial graph, and performing optical proximity correction on the second initial graph m times. And adjusting the first corrected simulation graph to obtain a second initial graph with a better graph shape, and after performing optical proximity correction on the second initial graph for m times, strengthening the convergence of the second initial graph.
Drawings
FIGS. 1 to 5 are schematic diagrams illustrating an optical proximity correction process according to a first embodiment of the present invention;
fig. 6 to 9 are schematic diagrams of an optical proximity correction process according to a second embodiment of the present invention.
Detailed Description
At present, when Optical Proximity Correction (OPC) is performed on some design patterns, the patterns are not restored to the target size after reaching a predetermined number of iterations, and the accuracy of the patterns obtained after the OPC is finished is poor. If a pattern is desired to reach a target size, especially some critical patterns with high importance, if the importance of the adjacent patterns is relatively low, the design targets of the adjacent patterns are changed, and the method is called target preprocessing. The target preprocessing technology is that after a round of OPC is operated to find a hot spot (Hotspot), manual correction is carried out on the Hotspot, OPC is carried out on the corrected graph, and the graph is repeatedly debugged to finally reach the expected target graph.
The target preprocessing needs manual intervention for correction, a new design graph needs to be defined in advance before next OPC is carried out, and the next processing is carried out after the OPC is operated to check the result.
In order to solve the above problem, the inventors provide an optical proximity correction method, which sets a first tolerance and a second tolerance for a first sub-pattern and a second sub-pattern in a first initial pattern, respectively, and the first tolerance is smaller than the second tolerance. In the process of carrying out optical proximity correction on the first sub-graph and the second sub-graph, when the first sub-graph cannot be corrected to a target size, due to the existence of the second tolerance, the second sub-graph can be automatically changed under the condition of meeting the requirement of the second tolerance, sufficient space is provided for correction of the first sub-graph until the first word graph and the second sub-graph both meet the correction requirement, namely the first edge placement error is smaller than or equal to the first tolerance, the second edge placement error is smaller than or equal to the second tolerance, and the optical proximity correction is completed. The optical proximity correction method can automatically adjust the first initial graph within the tolerance range, and the first initial graph does not need to be manually modified after the optical proximity correction is quitted, so that the first initial graph can reach the target size, the correction precision is improved, and the correction efficiency is improved.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
First embodiment
Fig. 1 to 5 are schematic diagrams of an optical proximity correction process according to a first embodiment of the present invention, wherein fig. 1 is a flowchart of the optical proximity correction process according to the first embodiment.
First, step S10 is executed to provide a first initial pattern.
Referring to fig. 2, the first initial graphic 100 includes a first sub-graphic 110 and a second sub-graphic 120.
It should be noted that the first sub-pattern 110 and the second sub-pattern 120 refer to a type of pattern, and the number may be one or several. The first sub-pattern 110 refers to a critical pattern with higher importance in a semiconductor manufacturing process, for example, a pattern corresponding to a device in an active region in a semiconductor; the second sub-pattern 120 refers to a general pattern having a lower importance, for example, a pattern corresponding to a device located in an inactive area.
The first initial pattern 100 is a target for optical proximity correction, i.e. ideally, the pattern on the wafer is identical to the first initial pattern 100.
In this embodiment, the number of the first sub-pattern 110 and the second sub-pattern 120 is one.
In this embodiment, the first sub-pattern 110 and the second sub-pattern 120 are both long strip-shaped structures, and for convenience of description, a line segment in the first sub-pattern 110 is set as a pattern a, and a line segment in the second sub-pattern 120 opposite to the pattern a is set as a pattern B, where the pattern a is a key pattern with high importance, and the pattern B is a general pattern with low importance.
In this embodiment, the optical proximity correction is mainly performed by taking the pattern a in the first sub-pattern 110 and the pattern B in the second sub-pattern 120 as an example.
With continued reference to fig. 1, step S20 is executed to set a first tolerance and a second tolerance for the first sub-pattern 110 and the second sub-pattern 120, respectively.
The first tolerance is smaller than the second tolerance, that is, the first tolerance given to the key graphic a of high importance is smaller than the second tolerance given to the general graphic B of low importance.
In this embodiment, the first tolerance refers to a range of acceptable first Edge Placement Errors (EPEs) of the first sub-pattern 110 in the subsequent optical proximity correction process, and as long as the first edge placement errors are within the range, the correction of the first sub-pattern 110 can be considered to be satisfactory, and the optical proximity correction can be ended. Similarly, the second tolerance refers to a range of acceptable second edge placement errors for the second sub-pattern 120 during subsequent optical proximity correction.
The first tolerance being less than the second tolerance means that the range of acceptable first edge placement errors is less than the range of acceptable second edge placement errors.
In this embodiment, the first tolerance is set to 0nm and the second tolerance is set to +/-2 nm.
The specific values of the first tolerance and the second tolerance are determined according to the requirement of the pattern on precision in the actual manufacturing process. If the requirement of the graph on the precision is high, the tolerance setting is small; on the contrary, the graph has lower requirement on precision, and the tolerance can be set to be larger.
In this embodiment, the first tolerance and the second tolerance are set manually, and after the corresponding tolerance is determined manually according to the requirement of the graph on the precision, a determined tolerance value is input in a computer for performing OPC operation.
In this embodiment, the first tolerance is smaller than the second tolerance. Since the critical pattern with high importance generally has a high requirement on precision in the semiconductor manufacturing process, the critical pattern needs to be repaired to a target size as much as possible in the optical proximity correction process, and thus the first tolerance of the setup is low.
In this embodiment, the second tolerance is set to enable the second sub-pattern 120 to automatically adjust the pattern in the optical proximity correction process, and the second sub-pattern does not need to be manually changed, and a space can be provided for the correction of the first sub-pattern until the optical correction is completed, so that on one hand, the correction accuracy of the first word pattern is improved, and on the other hand, the OPC correction efficiency is also improved.
Step S30 is executed to perform simulated exposure on the first initial pattern.
Referring to fig. 3, after performing simulated exposure on the first initial pattern 100, a first simulated pattern 111 and a second simulated pattern 121 corresponding to the first sub-pattern 110 and the second sub-pattern 120, respectively, are obtained.
In this embodiment, the first simulation graph 111 and the second simulation graph 121 are obtained by a simulation method.
Step S40 is executed to compare the first simulated pattern 111 with the first sub-pattern 110, and the second simulated pattern 121 with the second sub-pattern 120, so as to obtain a first edge placement error and a second edge placement error.
The specific step of obtaining the first edge placement error and the second edge placement error comprises:
referring to fig. 4, a plurality of sample points are respectively taken on the first sub pattern 110 and the second sub pattern 120.
In this embodiment, sampling points are specifically taken from the graph a and the graph B, the sampling points on the graph a include a1, a2 and A3, and the sampling points on the graph B include B1, B2 and B3.
The respective positions of the plurality of sample points are determined on the first and second simulation patterns 111 and 121.
Specifically, for the sampling point a1 disposed on the first sub-pattern 110, the direction extending at the sampling point a1 is a first direction (X direction) and a second direction (Y direction) perpendicular to the first direction (X direction), and the point intersecting the first analog pattern 111 in the second direction is the corresponding position a1 of the sampling point a 1.
In this embodiment, the positions of a1, a2, A3 are determined as a1, a2, A3 on the first simulation graph 111, and the positions of B1, B2, B3 are determined as B1, B2, B3 on the second simulation graph 121.
And comparing the position difference of the same sampling point in the first sub-graph 110 and the first simulation graph 111 to obtain a first edge placement error.
In this embodiment, the first edge placement error obtained includes the position difference EPE between a1 and a1A1EPE position difference between A2 and a2A2EPE position difference between A3 and a3A3。
And comparing the position difference of the same sampling point in the second sub-graph 120 and the second simulation graph 121 to obtain a second edge placement error.
In this embodiment, the second edge placement error obtained includes the position difference EPE between B1 and B1B1EPE position Difference between B2 and B2B2EPE position Difference between B3 and B3B3。
Step S50 is executed to determine whether the first edge placement error is less than or equal to the first tolerance and the second edge placement error is less than or equal to the second tolerance.
In this embodiment, the first edge placement error EPE is determinedA1、EPEA2And EPEA3Whether the first tolerance is less than or equal to the second tolerance and judging the second edge placement error EPEB1、EPEB2And EPEB3Whether less than or equal to the second toleranceAnd (4) degree.
If yes, step S60 is executed to complete the optical proximity correction, and obtain the first corrected graph 200.
Fig. 5 is a schematic diagram of the first correction pattern 200.
In this embodiment, EPE is requiredA1、EPEA2And EPEA3Are less than or equal to the first tolerance, the first edge placement error is considered to be less than or equal to the first tolerance; for the same reason, EPE is requiredB1、EPEB2And EPEB3Are less than or equal to the second tolerance, the second edge placement error is considered to be less than or equal to the second tolerance.
If the determination result is negative, step S70 is executed to adjust the first initial pattern 100, that is, adjust the first sub-pattern 110 and/or the second sub-pattern 120, so as to reduce the edge placement error.
When the judgment result is negative, the step of adjusting the first sub-pattern 110 includes: according to the difference between the edge placement errors of different sampling points and the first tolerance, obtaining the positions of the sampling points corresponding to the edge placement errors larger than the first tolerance, and adjusting the edges corresponding to the sampling points in the first sub-graph 110 according to the positions of the sampling points; the step of adjusting the second sub-pattern 120 comprises: and according to the difference between the edge placement errors of different sampling points and the second tolerance, obtaining the positions of the sampling points corresponding to the edge placement errors larger than the second tolerance, and adjusting the edges corresponding to the sampling points in the second sub-graph according to the positions of the sampling points.
In this embodiment, assume EPE is in the first edge placement errorA1If the first tolerance is larger than the first tolerance, the position of the sampling point A1 is determined, and the edge corresponding to the sampling point A1 in the first word graph is adjusted according to the position of the sampling point A1, so that the edge placement error is reduced.
Adjusting the first sub-feature 110 if the first edge placement error is greater than the first tolerance; adjusting the second sprite 120 if the second edge placement error is greater than the second tolerance; if the first edge placement error is greater than the first tolerance and the second edge placement error is greater than the second tolerance, then the first sub-pattern 110 and the second sub-pattern 120 are adjusted.
After adjusting the first sub-pattern 110 and/or the second sub-pattern 120, the steps from S30 to S50 are re-executed until the optical proximity correction is completed, so as to obtain the first corrected pattern 200.
Taking the adjustment of the first sub-pattern 110 as an example, the adjusted first sub-pattern 110 is subjected to simulated exposure to obtain a first adjusted simulated pattern corresponding to the adjusted first sub-pattern; comparing the first adjusted simulation graph with the adjusted first sub-graph to obtain a first edge placement error, wherein the method for obtaining the first edge placement error is the same as that described above, and is not repeated herein; if the first edge placement error is less than or equal to the first tolerance, completing optical proximity correction; if the first edge placement error is greater than the first tolerance, continuing to adjust the first sub-pattern, and then re-executing the above steps until the first edge placement error is less than or equal to the first tolerance, completing the optical proximity correction, and obtaining a first corrected pattern 200.
The schematic diagram of the first corrected graph 200 refers to fig. 5.
In this embodiment, a first tolerance is set for the first sub-pattern 110, i.e., the key pattern with high importance, and a second tolerance is set for the second sub-pattern 120, i.e., the general pattern with relatively low importance, and the first tolerance is smaller than the second tolerance because the key pattern has a high requirement for the correction accuracy. In the actual optical proximity correction process, because the correction requirement of the first sub-pattern is higher, the situation that the correction requirement cannot be met after the preset iteration number is reached may occur, at this time, the second sub-pattern adjacent to the first sub-pattern is automatically changed through the setting of the second tolerance, and in the range of the second tolerance, the distance between the first sub-pattern and the second sub-pattern can be enlarged, so that sufficient space is provided for the correction of the first sub-pattern, and the first sub-pattern can be continuously corrected until the correction requirement is met, so that the correction precision of the first sub-pattern, namely the key pattern, is improved. In addition, the general graph adjacent to the key graph is automatically changed, optical adjacent correction is not required to be quitted, manual change is carried out, and correction efficiency is improved.
The first embodiment of the present invention further provides a method for manufacturing a photomask, in which the first corrected pattern 200 obtained by using the optical proximity correction method is transferred to the photomask to form a first photomask pattern.
The first embodiment of the present invention further provides a patterning method, which transfers the obtained first mask pattern onto a wafer to form a first target pattern.
Second embodiment
Fig. 6 to 9 are schematic diagrams of optical proximity correction in a second embodiment of the present invention, wherein fig. 6 is a flowchart of optical proximity correction in the second embodiment of the present invention.
In this embodiment, the step of obtaining the first corrected graph 200 is the same as that in the first embodiment, and is not described herein again.
After the first corrected pattern 200 is obtained, referring to fig. 6, step S100 is executed to perform simulated exposure on the first corrected pattern 200 to obtain a first corrected simulated pattern 210.
Fig. 7 is a schematic diagram of the first modified simulation graph 210.
In this embodiment, the first modified simulated graphic 210 includes a first sub-modified simulated graphic 211 and a second sub-modified simulated graphic 212, the first sub-modified simulated graphic 211 has a graphic a 'corresponding to the graphic a, and the second sub-modified simulated graphic 212 has a graphic B' corresponding to the graphic B.
With continued reference to fig. 6, step S200 is performed to adjust the first modified simulation graph 210 to obtain a second initial graph 300.
Fig. 8 is a schematic diagram of the second initial graph 300, and the second initial graph 300 has a graph a ″ and a graph B ″ corresponding to the graph a 'and the graph B', respectively.
In this embodiment, the method for adjusting the first modified simulation pattern 210 includes: taking a plurality of sampling points on the first sub-pattern 110 and the second sub-pattern 120, respectively, and determining corresponding positions of the plurality of sampling points on the first sub-modified simulation pattern 211 and the second sub-modified simulation pattern 212; comparing the position difference of the same sampling point in the first sub-pattern 110 and the first sub-modified simulation pattern 211 with the position difference in the second sub-pattern 120 and the second sub-modified simulation pattern 212 to obtain a third edge placement error and a fourth edge placement error; obtaining an average value of the third edge placement errors as an average third edge placement error, and obtaining an average value of the fourth edge placement errors as an average fourth edge placement error; adjusting the edge corresponding to the sampling point in the first sub-correction simulation graph 211 by taking the average third edge placement error as a reference; and adjusting the corresponding edge of the sampling point in the second sub-correction simulation graph 212 by taking the average fourth edge placement error as a reference.
In this embodiment, the mean third edge placement error is used as a reference, which means that the edge placement error corresponding to each sampling point in the first sub-corrected simulation graph 211 is equal to the mean third edge placement error.
In other embodiments, the maximum value or the minimum value of the third edge placement error and the fourth edge placement error may be respectively selected as a reference, and the edge corresponding to the sampling point in the first modified simulation graph 210 is adjusted to obtain the second initial graph 300.
As can be seen from fig. 7, in the obtained first corrected simulation graph 210, the graph a 'and the graph B' are rough, and the line segments are not flat, so by adjusting the graph a 'and the graph B', the graph a ″ and the graph B ″ having smoother line segments are formed, and the convergence of the second initial graph 300 is enhanced.
With continued reference to fig. 6, step S400 is executed to perform m (m is a natural number greater than or equal to 1) times of optical proximity correction on the second initial pattern 300.
It should be noted that, before the step S400 is executed, the step S300 is also executed, and a third tolerance is set for the second initial graph 300.
In this embodiment, the third tolerance is set to 0. This is because, due to the first and second tolerances, there may be a certain range of errors in the optical proximity correction of the first sub-pattern 110 and the second sub-pattern 120, so that the first corrected simulated pattern 210 is obtained in which the first sub-corrected simulated pattern 211 and the second sub-corrected simulated pattern 212 are friendly compared to the first sub-pattern 110 and the second sub-pattern 120, i.e. the pattern B 'is in a position where the pattern a' can meet the repair requirement. When subsequent optical proximity correction is performed, it may not be necessary to set a large tolerance to achieve correction of the second initial pattern, and setting the tolerance to 0 may ensure correction accuracy of the second initial pattern 300.
In this embodiment, the steps of performing m (m is a natural number greater than or equal to 1) optical proximity corrections on the second initial pattern 300 are the same as those in the first embodiment, and are also implemented by methods such as simulated exposure and comparison, which are not described herein again.
Finally, step S500 is performed to obtain a second corrected graph 400.
Fig. 9 is a schematic diagram of the second correction pattern 400.
The second embodiment of the present invention further provides a method for manufacturing a photomask, in which the second corrected pattern 400 obtained by using the optical proximity correction method is transferred to the photomask to form a second photomask pattern.
The second embodiment of the present invention further provides a patterning method, which transfers the obtained second mask pattern onto a wafer to form a second target pattern.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. An optical proximity correction method, comprising:
providing a first initial graph, wherein the first initial graph comprises a first sub graph and a second sub graph;
respectively setting a first tolerance and a second tolerance for the first sub-graph and the second sub-graph, wherein the first tolerance is smaller than the second tolerance;
carrying out simulated exposure on the first initial graph to obtain a first simulated graph and a second simulated graph corresponding to the first sub-graph and the second sub-graph respectively;
comparing the first simulation graph with the first sub graph and the second simulation graph with the second sub graph to obtain a first edge placement error and a second edge placement error;
judging whether the first edge placement error is less than or equal to the first tolerance or not and whether the second edge placement error is less than or equal to the second tolerance or not;
if the judgment result is yes, finishing the optical proximity correction to obtain a first corrected graph;
if the judgment result is negative, adjusting the first sub-pattern and/or the second sub-pattern, and re-executing the steps of exposure and comparison until the optical proximity correction is completed to obtain a first corrected pattern.
2. The optical proximity correction method of claim 1, further comprising:
carrying out simulated exposure on the first corrected graph to obtain a first corrected simulated graph;
adjusting the first corrected simulation graph to obtain a second initial graph;
and performing m-time optical proximity correction on the second initial graph to obtain a second corrected graph, wherein m is a natural number greater than or equal to 1.
3. The optical proximity correction method of claim 2, wherein the first corrected analog pattern includes a first sub-corrected analog pattern and a second sub-corrected analog pattern, and the method of adjusting the first corrected analog pattern includes:
respectively taking a plurality of sampling points on the first sub-graph and the second sub-graph, and determining corresponding positions of the plurality of sampling points on the first sub-correction simulation graph and the second sub-correction simulation graph;
comparing the position difference of the same sampling point in the first sub-graph and the first sub-correction simulation graph with the position difference of the same sampling point in the second sub-graph and the second sub-correction simulation graph to obtain a third edge placement error and a fourth edge placement error;
obtaining an average value of the third edge placement errors as an average third edge placement error, and obtaining an average value of the fourth edge placement errors as an average fourth edge placement error;
adjusting the edge corresponding to the sampling point in the first sub-correction simulation graph by taking the average third edge placement error as a reference;
and adjusting the corresponding edge of the sampling point in the second sub-correction simulation graph by taking the average fourth edge placement error as a reference.
4. The optical proximity correction method according to claim 2, wherein a third tolerance is set for the second initial pattern before the optical proximity correction is performed on the second initial pattern, and the third tolerance is 0.
5. The optical proximity correction method of claim 1, wherein the method of obtaining the first edge placement error and the second edge placement error comprises:
respectively taking a plurality of sampling points on the first sub-graph and the second sub-graph, and determining corresponding positions of the plurality of sampling points on the first simulation graph and the second simulation graph;
comparing the position difference of the same sampling point in the first sub-graph and the first simulation graph to obtain a first edge placement error;
and comparing the position difference of the same sampling point in the second sub-graph and the second simulation graph to obtain a second edge placement error.
6. The optical proximity correction method of claim 5, wherein the step of adjusting the first subpattern comprises: according to the difference between the edge placement errors of different sampling points and the first tolerance, obtaining the positions of the sampling points corresponding to the edge placement errors larger than the first tolerance, and adjusting the edges corresponding to the sampling points in the first sub-graph according to the positions of the sampling points;
the step of adjusting the second sub-pattern comprises: and according to the difference between the edge placement errors of different sampling points and the second tolerance, obtaining the positions of the sampling points corresponding to the edge placement errors larger than the second tolerance, and adjusting the edges corresponding to the sampling points in the second sub-graph according to the positions of the sampling points.
7. A method for manufacturing a photomask is characterized by comprising the following steps:
providing a first initial graph, wherein the first initial graph comprises a first sub graph and a second sub graph;
respectively setting a first tolerance and a second tolerance for the first sub-graph and the second sub-graph, wherein the first tolerance is smaller than the second tolerance;
carrying out simulated exposure on the first initial graph to obtain a first simulated graph and a second simulated graph corresponding to the first sub-graph and the second sub-graph respectively;
comparing the first simulation graph with the first sub graph and the second simulation graph with the second sub graph to obtain a first edge placement error and a second edge placement error;
judging whether the first edge placement error is less than or equal to the first tolerance or not and whether the second edge placement error is less than or equal to the second tolerance or not;
if the judgment result is yes, finishing the optical proximity correction to obtain a first corrected graph;
if the judgment result is negative, adjusting the first sub-pattern and the second sub-pattern, and re-executing the steps of exposure and comparison until the optical proximity correction is completed to obtain a first corrected pattern;
and transferring the obtained first corrected graph to a photomask plate to form a first mask plate graph.
8. The method of manufacturing a photomask of claim 7, after forming the first corrected pattern, further comprising:
carrying out simulated exposure on the first corrected graph to obtain a first corrected simulated graph;
adjusting the first corrected simulation graph to obtain a second initial graph;
performing m-time optical proximity correction on the second initial graph to obtain a second corrected graph, wherein m is a natural number greater than or equal to 1;
and transferring the second corrected graph to a photomask plate to form a second mask plate graph.
9. A method of patterning, comprising:
providing a first initial graph, wherein the first initial graph comprises a first sub graph and a second sub graph;
respectively setting a first tolerance and a second tolerance for the first sub-graph and the second sub-graph, wherein the first tolerance is smaller than the second tolerance;
carrying out simulated exposure on the first initial graph to obtain a first simulated graph and a second simulated graph corresponding to the first sub-graph and the second sub-graph respectively;
comparing the first simulation graph with the first sub graph and the second simulation graph with the second sub graph to obtain a first edge placement error and a second edge placement error;
judging whether the first edge placement error is less than or equal to the first tolerance or not and whether the second edge placement error is less than or equal to the second tolerance or not;
if the judgment result is yes, finishing the optical proximity correction to obtain a first corrected graph;
if the judgment result is negative, adjusting the first sub-pattern and the second sub-pattern, and re-executing the steps of exposure and comparison until the optical proximity correction is completed to obtain a first corrected pattern;
transferring the obtained first corrected graph to a photomask plate to form a first mask plate graph;
and transferring the first mask pattern to a wafer to form a first target pattern.
10. The patterning process of claim 9, wherein after obtaining the first corrected pattern, further comprising:
carrying out simulated exposure on the first corrected graph to obtain a first corrected simulated graph;
adjusting the first corrected simulation graph to obtain a second initial graph;
performing m-time optical proximity correction on the second initial graph to obtain a second corrected graph, wherein m is a natural number greater than or equal to 1;
transferring the second corrected graph to a photomask plate to form a second photomask plate graph;
and transferring the second mask pattern to a wafer to form a second target pattern.
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| CN115933305A (en) * | 2023-01-29 | 2023-04-07 | 合肥晶合集成电路股份有限公司 | Method, device, equipment and medium for correcting photomask graph |
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